CN104851950A - LED chip structure with high light extracting rate - Google Patents
LED chip structure with high light extracting rate Download PDFInfo
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- CN104851950A CN104851950A CN201510147201.9A CN201510147201A CN104851950A CN 104851950 A CN104851950 A CN 104851950A CN 201510147201 A CN201510147201 A CN 201510147201A CN 104851950 A CN104851950 A CN 104851950A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
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Abstract
本发明公开了高出光率的LED芯片结构，具体是提高LED芯片电流扩散、提高最终出光率；采用的技术方案为：高出光率的LED芯片结构，包括发光本体，所述发光本体的上端设置有N电极，所述发光本体的下端设置有P电极，所述发光本体和N电极之间设置有P型金属；本发明广泛应用于LED芯片技术领域。
The invention discloses an LED chip structure with a high light output rate, specifically improving the current diffusion of the LED chip and increasing the final light output rate; the technical solution adopted is: the LED chip structure with a high light output rate includes a light-emitting body, and the upper end of the light-emitting body is set There is an N electrode, the lower end of the light-emitting body is provided with a P-electrode, and a P-type metal is arranged between the light-emitting body and the N-electrode; the present invention is widely used in the technical field of LED chips.
Description
技术领域 technical field
本发明高出光率的LED芯片结构，属于LED芯片技术领域。 The LED chip structure with high light extraction rate of the invention belongs to the technical field of LED chips.
背景技术 Background technique
目前LED技术已经取得很大成果，但是LED电光转换效率还不是很高。人们已经提出了多种能提高光提取效率的方法，比如倒装结构、芯片形状几何化结构、图形衬底、光子晶体、表面粗化、背镀反射镜、电流扩展优化等。然而，如何突破现有技术进一步提高出光效率仍然是当前需要解决的重要问题。 At present, LED technology has made great achievements, but the electro-optical conversion efficiency of LED is not very high. People have proposed a variety of methods to improve light extraction efficiency, such as flip-chip structure, chip shape geometric structure, graphic substrate, photonic crystal, surface roughening, back-plated mirror, current spreading optimization, etc. However, how to break through the existing technology and further improve the light extraction efficiency is still an important problem to be solved.
发明内容 Contents of the invention
本发明克服现有技术存在的不足，所要解决的技术问题为提供一种高出光率的LED芯片结构，具体是提高LED芯片电流扩散、提高最终出光率。 The present invention overcomes the deficiencies in the prior art, and the technical problem to be solved is to provide an LED chip structure with high light extraction rate, specifically to increase the current diffusion of the LED chip and improve the final light output rate.
为了解决上述技术问题，本发明采用的技术方案为：高出光率的LED芯片结构，包括发光本体，所述发光本体的上端设置有N电极，所述发光本体的下端设置有P电极，所述发光本体和N电极之间设置有P型金属。 In order to solve the above technical problems, the technical solution adopted by the present invention is: LED chip structure with high light output rate, including a light-emitting body, an N electrode is arranged at the upper end of the light-emitting body, and a P-electrode is arranged at the lower end of the light-emitting body. P-type metal is arranged between the light-emitting body and the N electrode.
所述P型金属蒸镀在N电极的下端面上。 The P-type metal is evaporated on the lower end surface of the N electrode.
两个所述的P电极对称设置在发光本体的下部两端。 The two P electrodes are arranged symmetrically at both ends of the lower part of the light-emitting body.
所述N电极呈凸形，所述P型金属位于N电极凸形的正下方，所述P型金属的宽度小于N电极凸形的下部宽度。 The N electrode has a convex shape, the P-type metal is located directly below the N electrode convex shape, and the width of the P-type metal is smaller than the lower width of the N electrode convex shape.
本发明与现有技术相比具有的有益效果是：本发明解决了LED芯片内部电流扩散不均匀所导致的出光率低的技术问题，在发光本体的上端设置N电极，在发光本体的下端设置P电极，将P型金属设置在发光本体和N电极之间，通过提高LED芯片电流扩散，提高最终出光率。 Compared with the prior art, the present invention has the beneficial effects that: the present invention solves the technical problem of low light extraction rate caused by uneven current diffusion inside the LED chip. The P electrode, the P-type metal is placed between the light-emitting body and the N electrode, and the final light output rate is improved by increasing the current diffusion of the LED chip.
附图说明 Description of drawings
下面结合附图对本发明做进一步详细的说明。 The present invention will be described in further detail below in conjunction with the accompanying drawings.
图1为本发明的结构示意图。 Fig. 1 is a structural schematic diagram of the present invention.
图中：1为发光本体、2为N电极、3为P电极、4为P型金属。 In the figure: 1 is the light-emitting body, 2 is the N electrode, 3 is the P electrode, and 4 is the P-type metal.
具体实施方式 Detailed ways
如图1所示，本发明高出光率的LED芯片结构，包括发光本体1，所述发光本体1的上端设置有N电极2，所述发光本体1的下端设置有P电极3，所述发光本体1和N电极2之间设置有P型金属4。 As shown in Figure 1, the LED chip structure with high light output rate of the present invention includes a light emitting body 1, an N electrode 2 is arranged at the upper end of the light emitting body 1, a P electrode 3 is arranged at the lower end of the light emitting body 1, and the light emitting body 1 is provided with a P electrode 3 at the lower end of the light emitting body 1. A P-type metal 4 is disposed between the body 1 and the N electrode 2 .
所述P型金属4蒸镀在N电极2的下端面上。 The P-type metal 4 is evaporated on the lower end surface of the N electrode 2 .
两个所述的P电极3对称设置在发光本体1的下部两端。 The two P electrodes 3 are symmetrically arranged at both ends of the lower part of the light emitting body 1 .
所述N电极2呈凸形，所述P型金属4位于N电极2凸形的正下方，所述P型金属4的宽度小于N电极2凸形的下部宽度。 The N-electrode 2 is convex, the P-type metal 4 is located directly below the N-electrode 2 , and the width of the P-type metal 4 is smaller than the lower width of the N-electrode 2 .
本发明是在外延层表面进行微影作业，图形与N-pad形状类似，通过冷镀方式将P型金属蒸镀于芯片N面，进行蚀刻作业，将P型金属图形化；然后在P型金属表面蒸镀N-pad。 In the present invention, lithography is carried out on the surface of the epitaxial layer, and the pattern is similar to the shape of the N-pad. The P-type metal is vapor-deposited on the N-side of the chip by cold plating, and the etching operation is performed to pattern the P-type metal; Evaporate N-pad on the metal surface.
通过上述方式，最终实现在红光芯片的N-Pad下面蒸镀一层P型金属，形成Schottky使电流向四周扩散。 Through the above method, a layer of P-type metal is finally evaporated under the N-Pad of the red chip to form a Schottky to diffuse the current to the surroundings.
本发明的工作原理：在接通电源后，由于P型金属的存在，电流不会集中于PAD正下方区域，而向电极周围扩散，最大限度了通过芯片发光区，从而增加了芯片的出光率。 The working principle of the present invention: after the power is turned on, due to the existence of the P-type metal, the current will not concentrate in the area directly under the PAD, but will spread around the electrodes, passing through the light-emitting area of the chip to the maximum extent, thereby increasing the light-emitting rate of the chip .
上面结合附图对本发明的实施例作了详细说明，但是本发明并不限于上述实施例，在本领域普通技术人员所具备的知识范围内，还可以在不脱离本发明宗旨的前提下作出各种变化。 The embodiments of the present invention have been described in detail above in conjunction with the accompanying drawings, but the present invention is not limited to the above embodiments. Within the scope of knowledge of those of ordinary skill in the art, various modifications can be made without departing from the gist of the present invention. kind of change.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510147201.9A CN104851950A (en) | 2015-03-31 | 2015-03-31 | LED chip structure with high light extracting rate |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510147201.9A CN104851950A (en) | 2015-03-31 | 2015-03-31 | LED chip structure with high light extracting rate |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201773863U (en) * | 2010-07-19 | 2011-03-23 | 亚威朗光电(中国)有限公司 | Transverse-structured LED chip |
| CN102394267A (en) * | 2011-11-28 | 2012-03-28 | 江苏新广联科技股份有限公司 | LED chip capable of improving light extraction efficiency |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | A gallium nitride based light emitting diode |
| CN202797075U (en) * | 2012-05-18 | 2013-03-13 | 杭州士兰明芯科技有限公司 | Vertically-structured white light LED chip |
| CN104064633A (en) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | A method of manufacturing a light emitting diode |
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- 2015-03-31 CN CN201510147201.9A patent/CN104851950A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201773863U (en) * | 2010-07-19 | 2011-03-23 | 亚威朗光电(中国)有限公司 | Transverse-structured LED chip |
| CN102394267A (en) * | 2011-11-28 | 2012-03-28 | 江苏新广联科技股份有限公司 | LED chip capable of improving light extraction efficiency |
| CN202797075U (en) * | 2012-05-18 | 2013-03-13 | 杭州士兰明芯科技有限公司 | Vertically-structured white light LED chip |
| CN102709420A (en) * | 2012-06-21 | 2012-10-03 | 安徽三安光电有限公司 | A gallium nitride based light emitting diode |
| CN104064633A (en) * | 2013-03-22 | 2014-09-24 | 上海蓝光科技有限公司 | A method of manufacturing a light emitting diode |
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Application publication date: 20150819 |
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