CN104851772A - A liftable ceramic baffle structure - Google Patents
A liftable ceramic baffle structure Download PDFInfo
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- CN104851772A CN104851772A CN201510157531.6A CN201510157531A CN104851772A CN 104851772 A CN104851772 A CN 104851772A CN 201510157531 A CN201510157531 A CN 201510157531A CN 104851772 A CN104851772 A CN 104851772A
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- reaction chamber
- ceramic ring
- film
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- ceramic
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- 239000000919 ceramic Substances 0.000 title claims abstract description 43
- 239000010408 film Substances 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 6
- 238000009826 distribution Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000463 material Substances 0.000 abstract description 3
- 238000002360 preparation method Methods 0.000 abstract description 3
- 238000000427 thin-film deposition Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 8
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
一种可升降陶瓷挡板结构，主要解决现有设备的传片口对能量场分布有影响的问题。该结构包括反应腔、陶瓷环、陶瓷环A及陶瓷环B。上述陶瓷环A安装在反应腔内，放置于下部，并将反应腔下部侧面一半的面积遮挡；上述陶瓷环B安装在反应腔内，放置于上部，将反应腔的上部侧面全部的面积遮挡；上述陶瓷环遮挡住反应腔的其余内侧壁表面，且陶瓷环与连杆连接。该新型结构为薄膜制程提供一个封闭的、规则的、材料一致的反应环境，将反应腔几何结构和材料对工艺制程的影响降到最低，保证薄膜产品的质量。具有结构简单、合理，易于在半导体薄膜沉积应用及制备技术领域推广的特点。
A liftable ceramic baffle structure mainly solves the problem that the existing equipment's film delivery port has an influence on the energy field distribution. The structure includes a reaction chamber, a ceramic ring, a ceramic ring A and a ceramic ring B. The above-mentioned ceramic ring A is installed in the reaction chamber, placed in the lower part, and covers half of the area of the lower side of the reaction chamber; the above-mentioned ceramic ring B is installed in the reaction chamber, placed in the upper part, and covers all the area of the upper side of the reaction chamber; The above-mentioned ceramic ring covers the remaining inner wall surface of the reaction chamber, and the ceramic ring is connected with the connecting rod. The new structure provides a closed, regular, and material-consistent reaction environment for the thin-film manufacturing process, minimizes the influence of the geometric structure and materials of the reaction chamber on the manufacturing process, and ensures the quality of thin-film products. The invention has the characteristics of simple and reasonable structure, and is easy to popularize in the field of semiconductor thin film deposition application and preparation technology.
Description
技术领域technical field
本发明涉及一种可以通过升降改变陶瓷环在反应腔的位置，实现设备在工艺时保证腔室内完全由陶瓷材料包裹，工艺结束后还可以将陶瓷挡住的传片口暴露出来的一种结构，属于半导体薄膜沉积应用及制备技术领域。The invention relates to a structure that can change the position of the ceramic ring in the reaction chamber by lifting and lowering, so as to ensure that the chamber is completely covered with ceramic materials during the process of the equipment, and can expose the film transfer port blocked by the ceramic after the process is over. Semiconductor thin film deposition application and preparation technology field.
背景技术Background technique
在薄膜的制程中，腔体内部的缝隙、台阶、不同材料的导电系数都会对射频场和等离子体的分布产生很大的影响。当分布不均的情况发生时，对薄膜制程就会产生重大的影响，使得均匀性指标超出产品要求的范围。现有的设备普遍腔内结构为不规则的圆形，传片口处会多出一块矩形空间。正是这块矩形空间严重的影响了上述两种能量场的分布。In the thin film manufacturing process, the gaps, steps, and conductivity coefficients of different materials inside the cavity will have a great impact on the distribution of the radio frequency field and plasma. When the uneven distribution occurs, it will have a significant impact on the film manufacturing process, making the uniformity index exceed the range required by the product. The existing equipment generally has an irregular circular cavity structure, and there will be an extra rectangular space at the film transfer port. It is this rectangular space that seriously affects the distribution of the above two energy fields.
发明内容Contents of the invention
本发明以解决上述问题为目的，主要解决现有设备的传片口对能量场分布有影响的问题，而提供一种能在薄膜制程中保证形成一个对称、均匀，没有突兀结构的环形封闭空间，能适用提高半导体行业薄膜制程中产品质量的新型可升降陶瓷挡板结构。The purpose of the present invention is to solve the above-mentioned problems, mainly to solve the problem that the transfer port of the existing equipment has an influence on the energy field distribution, and to provide a symmetrical, uniform, and non-obtrusive ring-shaped closed space that can be guaranteed to be formed during the film manufacturing process. A new liftable ceramic baffle structure that can be applied to improve product quality in the thin film process of the semiconductor industry.
为实现上述目的，本发明采用下述技术方案：一种可升降陶瓷挡板结构，包括反应腔(2)、陶瓷环(1)、陶瓷环A(3)、陶瓷环B(4)。上述陶瓷环A(3)安装在反应腔(2)内，放置于下部，并将反应腔(2)下部侧面一半的面积遮挡；上述陶瓷环B(4)安装在反应腔(2)内，放置于上部，将反应腔(2)的上部侧面全部的面积遮挡；上述陶瓷环(1)遮挡住反应腔(2)的其余内侧壁表面，且陶瓷环(1)与连杆(5)连接。To achieve the above object, the present invention adopts the following technical solutions: a liftable ceramic baffle structure, including a reaction chamber (2), a ceramic ring (1), a ceramic ring A (3), and a ceramic ring B (4). The above-mentioned ceramic ring A (3) is installed in the reaction chamber (2), placed in the lower part, and half of the area of the lower side of the reaction chamber (2) is blocked; the above-mentioned ceramic ring B (4) is installed in the reaction chamber (2), Placed on the upper part to cover the entire area of the upper side of the reaction chamber (2); the above-mentioned ceramic ring (1) blocks the remaining inner wall surface of the reaction chamber (2), and the ceramic ring (1) is connected to the connecting rod (5) .
本发明的有益效果及特点在于：Beneficial effects and characteristics of the present invention are:
该新型结构为薄膜制程提供一个封闭的、规则的、材料一致的反应环境，将反应腔几何结构和材料对工艺制程的影响降到最低，保证薄膜产品的质量。具有结构简单、合理，易于在半导体薄膜沉积应用及制备技术领域推广的特点。The new structure provides a closed, regular, and material-consistent reaction environment for the thin-film manufacturing process, minimizes the influence of the geometric structure and materials of the reaction chamber on the manufacturing process, and ensures the quality of thin-film products. The invention has the characteristics of simple and reasonable structure, and is easy to popularize in the field of semiconductor thin film deposition application and preparation technology.
附图说明Description of drawings
图1是本发明的结构示意图。Fig. 1 is a structural schematic diagram of the present invention.
图2是图1的纵截面剖视图，也是传片过程的使用状态示意图。Fig. 2 is a longitudinal sectional view of Fig. 1, which is also a schematic view of the use state of the sheet transfer process.
具体实施方式Detailed ways
实施例Example
参照图1-2，一种可升降陶瓷挡板结构，包括反应腔2、陶瓷环1、陶瓷环A3、陶瓷环B4。上述陶瓷环A3安装在反应腔2内，放置于下部，并将反应腔2下部侧面一半的面积遮挡；上述陶瓷环B4安装在反应腔2内，放置于上部，将反应腔2的上部侧面全部的面积遮挡；上述陶瓷环1遮挡住反应腔2的其余内侧壁表面，且陶瓷环1与连杆5连接。Referring to Figures 1-2, a liftable ceramic baffle structure includes a reaction chamber 2, a ceramic ring 1, a ceramic ring A3, and a ceramic ring B4. The above-mentioned ceramic ring A3 is installed in the reaction chamber 2, placed in the lower part, and covers half of the area of the lower side of the reaction chamber 2; The area is covered; the above-mentioned ceramic ring 1 covers the rest of the inner wall surface of the reaction chamber 2, and the ceramic ring 1 is connected with the connecting rod 5 .
本发明的工作原理：陶瓷环1由连杆5带动，可以在反应腔2内上下移动。当反应腔开始薄膜制程时，连杆5带动陶瓷环1移动到上部位置，反应腔2内壁面由陶瓷环1陶瓷环A3、陶瓷环B4全部遮盖。在制程中，设备始终处于完全由陶瓷组成的完整的封闭圆环，使能量场均匀分布。当制程结束时，连杆5带动陶瓷环1移动到下部位置，反应腔2的传片口暴露出来，晶圆由机械手将其运出并将新的晶圆运入反应腔2内，重复连杆5带动陶瓷环1移动到上部位置的动作，完成一个循环。Working principle of the present invention: the ceramic ring 1 is driven by the connecting rod 5 and can move up and down in the reaction chamber 2 . When the reaction chamber starts the film process, the connecting rod 5 drives the ceramic ring 1 to move to the upper position, and the inner wall of the reaction chamber 2 is completely covered by the ceramic ring 1, ceramic ring A3, and ceramic ring B4. During the process, the equipment is always in a complete closed circle composed entirely of ceramics, so that the energy field is evenly distributed. When the process ends, the connecting rod 5 drives the ceramic ring 1 to move to the lower position, and the film transfer port of the reaction chamber 2 is exposed, and the wafer is transported out by the robot and a new wafer is transported into the reaction chamber 2, and the connecting rod is repeated. 5. The action of driving the ceramic ring 1 to move to the upper position completes a cycle.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157531.6A CN104851772A (en) | 2015-04-03 | 2015-04-03 | A liftable ceramic baffle structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510157531.6A CN104851772A (en) | 2015-04-03 | 2015-04-03 | A liftable ceramic baffle structure |
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| Publication Number | Publication Date |
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| CN104851772A true CN104851772A (en) | 2015-08-19 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510157531.6A Pending CN104851772A (en) | 2015-04-03 | 2015-04-03 | A liftable ceramic baffle structure |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505009A (en) * | 2015-09-08 | 2017-03-15 | 沈阳拓荆科技有限公司 | A ceramic baffle with a metal clamping structure |
| CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Reactor of metal organic chemical vapor deposition equipment |
| USD1059311S1 (en) | 2021-08-13 | 2025-01-28 | Asm Ip Holding B.V. | Reaction chamber base plate |
Citations (7)
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|---|---|---|---|---|
| US20010054484A1 (en) * | 1999-11-22 | 2001-12-27 | Mitsuaki Komino | Plasma processor, cluster tool, and method of controlling plasma |
| CN1546743A (en) * | 2003-12-05 | 2004-11-17 | 清华大学 | Monolithic three-chamber infrared heating ultra-high vacuum chemical vapor deposition epitaxy system |
| US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
| CN101809708A (en) * | 2007-07-27 | 2010-08-18 | 马特森技术公司 | Advanced multi-workpiece processing chamber |
| CN203284452U (en) * | 2013-05-17 | 2013-11-13 | 沈阳拓荆科技有限公司 | Single reaction cavity film deposition equipment with film transferring cavity |
| CN203377195U (en) * | 2013-06-08 | 2014-01-01 | 天通吉成机器技术有限公司 | Reaction chamber for dry plasma etching machine |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
-
2015
- 2015-04-03 CN CN201510157531.6A patent/CN104851772A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010054484A1 (en) * | 1999-11-22 | 2001-12-27 | Mitsuaki Komino | Plasma processor, cluster tool, and method of controlling plasma |
| CN1546743A (en) * | 2003-12-05 | 2004-11-17 | 清华大学 | Monolithic three-chamber infrared heating ultra-high vacuum chemical vapor deposition epitaxy system |
| US20060054090A1 (en) * | 2004-09-15 | 2006-03-16 | Applied Materials, Inc. | PECVD susceptor support construction |
| CN101809708A (en) * | 2007-07-27 | 2010-08-18 | 马特森技术公司 | Advanced multi-workpiece processing chamber |
| CN203284452U (en) * | 2013-05-17 | 2013-11-13 | 沈阳拓荆科技有限公司 | Single reaction cavity film deposition equipment with film transferring cavity |
| CN203377195U (en) * | 2013-06-08 | 2014-01-01 | 天通吉成机器技术有限公司 | Reaction chamber for dry plasma etching machine |
| CN104213102A (en) * | 2014-09-01 | 2014-12-17 | 沈阳拓荆科技有限公司 | Cavity airflow direction changeable structure |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106505009A (en) * | 2015-09-08 | 2017-03-15 | 沈阳拓荆科技有限公司 | A ceramic baffle with a metal clamping structure |
| CN112877775A (en) * | 2020-12-30 | 2021-06-01 | 华灿光电（浙江）有限公司 | Reactor of metal organic chemical vapor deposition equipment |
| USD1059311S1 (en) | 2021-08-13 | 2025-01-28 | Asm Ip Holding B.V. | Reaction chamber base plate |
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Application publication date: 20150819 |