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CN104849958A - Semi-transparent and semi-covered panel, touch panel and manufacturing methods of semi-transparent and semi-covered panel and touch panel as well as display device - Google Patents

Semi-transparent and semi-covered panel, touch panel and manufacturing methods of semi-transparent and semi-covered panel and touch panel as well as display device Download PDF

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Publication number
CN104849958A
CN104849958A CN201510290853.8A CN201510290853A CN104849958A CN 104849958 A CN104849958 A CN 104849958A CN 201510290853 A CN201510290853 A CN 201510290853A CN 104849958 A CN104849958 A CN 104849958A
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China
Prior art keywords
photoresistance
light resistance
resistance layer
white
semi
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CN201510290853.8A
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CN104849958B (en
Inventor
田慧
徐传祥
付承宇
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BOE Technology Group Co Ltd
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BOE Technology Group Co Ltd
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Abstract

The embodiment of the invention provides a semi-transparent and semi-covered panel, a touch panel and manufacturing methods of the semi-transparent and semi-covered panel and the touch panel as well as a display device, and relates to the technical field of display, aiming at solving the problem that the color of a white touch panel is not uniform. The manufacturing method of the semi-transparent and semi-covered panel comprises the steps of enabling a substrate to be respectively coated with a negative white light resistance and a positive transparent light resistance to form a white light resistance layer and a positive light resistance layer; exposing the positive light resistance layer for the first time, developing, and then removing photoresist at the exposure range to form a first light resistance pattern, wherein an unexposed white light resistance is covered by the first light resistance pattern; enabling the first light resistance pattern and the exposed white light resistance to be coated with a black light resistance to form a black light resistance layer; exposing the black light resistance layer for a second time, developing, and then removing the black light resistance layer covering the first light resistance pattern, the white light resistance layer covered by the first light resistance pattern, and the first light resistance pattern to form a shading area. The method can be applied to the manufacturing process of the touch panel.

Description

One is semi-transparent partly hides panel, contact panel and preparation method thereof and display device
Technical field
The present invention relates to display technique field, particularly relate to and a kind of semi-transparently partly hide panel, contact panel and preparation method thereof and display device.
Background technology
OGS (One Glass Solution, monolithic glass formula) contact panel, namely hides on panel semi-transparent half and directly forms conducting film and sensor, make semi-transparent half to hide the double action that panel plays protection inner structure glass and touch sensing simultaneously.Wherein, semi-transparent half hides panel buttress can specifically be divided into according to the color of lightproof area: the black using black color blocking to make is semi-transparent partly hides panel, and the white using white color blocking to make is semi-transparent partly hides panel.
Partly panel is hidden for white is semi-transparent, as shown in Figure 1, glass substrate 01 is provided with white photoresistance 02, because the optical density value of white photoresistance is lower, therefore, in order to meet shading requirement, need on white photoresistance 02, cover one deck black photoresistance 03, if but white photoresistance 02 is thinner, color meeting pastiness after covering thereafter black photoresistance 03, this just requires that white light resistance 02 is thick as much as possible.
But, when the white photoresistance 02 formed is thicker, after first time exposure imaging, the trapezoidal white photoresistance 02 that can be formed, like this, trapezoidal white photoresistance 02 applies black photoresistance 03, after second time exposure imaging, because black photoresistance 03 accumulates in the edge of white photoresistance 02, therefore the black photoresistance 03 of white photoresistance 02 edge is difficult to be washed off by development, so just cause the problem that white photoresistance 02 edge remains black photoresistance 03, and then cause the phenomenon of irregular colour on semi-transparent half screening panel.
Summary of the invention
Embodiments of the invention provide a kind of and semi-transparently partly hide panel, contact panel and preparation method thereof and display device, solve the phenomenon that white semi-transparent half hides irregular colour on panel.
For achieving the above object, embodiments of the invention adopt following technical scheme:
Embodiments of the invention provide a kind of method for making of semi-transparent half screening panel, comprising:
Substrate applies negativity white photoresistance and the transparent photoresistance of positivity respectively, forms white light resistance layer and positivity photoresist layer;
First time exposure is carried out to described positivity photoresist layer, forms the first photoresistance pattern after removing the photoresist of exposure area after development, wherein, under described first photoresistance pattern, be coated with unexposed white photoresistance;
Described first photoresistance pattern with the white photoresistance be exposed apply black photoresistance, forms black light resistance layer;
Second time exposure is carried out to described black light resistance layer, after development, removes the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern, form lightproof area.
Further, described black photoresistance is negativity.
Further, second time exposure is carried out to described black light resistance layer, remove the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern after development, form lightproof area, comprising:
Described second time exposure is carried out to described black light resistance layer, after development, removes the black photoresistance that described first photoresistance pattern covers;
By developing process and stripping technology, remove described unexposed white photoresistance, and described first photoresistance pattern and described unexposed white photoresistance are peeled off, form lightproof area at described substrate.
Further, after substrate applies white photoresistance, also comprise:
Described white light resistance layer is carried out soft roasting.
Further, described first photoresistance pattern with the white photoresistance be exposed apply black photoresistance, after forming black light resistance layer, also comprise:
Described black light resistance layer is carried out soft roasting.
Further, described black light resistance layer is being carried out to second time exposure, remove the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern after development, after forming lightproof area, also comprise:
The black photoresistance retained and transmission region form insulation course.
Embodiments of the invention also provide a kind of and semi-transparently partly hide panel, and described semi-transparent half hides panel is made by semi-transparent half method for making hiding panel of above-mentioned any one.
In addition, embodiments of the invention provide a kind of method for making of contact panel, and after the described insulation course of formation, described method also comprises:
Described insulation course makes and touches drive electrode, separate to be formed betwixt the touch sensible electrode of capacitive coupling node with described touch drive electrode and be coupled to described touch sensible electrode to measure the touch control sensing circuit of capacitive coupling node place capacitance variations.
Accordingly, embodiments of the invention also provide a kind of contact panel, and described contact panel is made by the method for making of above-mentioned contact panel.
Further, embodiments of the invention also provide a kind of display device, comprise above-mentioned contact panel.
Embodiments of the invention provide a kind of and semi-transparently partly hide panel, contact panel and preparation method thereof and display device, substrate applies negativity white photoresistance and the transparent photoresistance of positivity respectively, forms white light resistance layer and positivity photoresist layer, and then, first time exposure is carried out to positivity photoresist layer, because photoresistance in positivity photoresist layer is positivity, and white photoresistance is negativity, therefore, the photoresist of exposure area is removed after development, the first photoresistance pattern is formed after unexposed photoresist solidification, now, under the first photoresistance pattern, be coated with unexposed white photoresistance, and the white photoresistance in the first unlapped region of photoresistance pattern is exposed, like this, the first photoresistance pattern with the white photoresistance be exposed apply black photoresistance, forms black light resistance layer, and second time exposure is carried out to black light resistance layer, the black light resistance layer that the first photoresistance pattern covers is removed after development, now, because the white photoresistance covered under the first photoresistance pattern is unexposed, and white photoresistance is negativity, therefore, after development, unexposed white photoresistance is also removed, first photoresistance pattern and white photoresistance are peeled off and are removed thereupon, final formed by the white photoresistance after exposing on substrate and be covered in the lightproof area that the black photoresistance on white photoresistance forms, can find out, during the black light resistance layer that removal first photoresistance pattern covers, because the thickness of the first photoresistance pattern is less, the black light resistance layer that the first photoresistance pattern covers is there will not be to be difficult to the problem removed of developing, more can not remain in the edge of white photoresistance the black photoresistance do not washed off, and then while not increasing exposure frequency, solve the phenomenon that white semi-transparent half hides irregular colour in panel.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of semi-transparent half screening panel in prior art;
The schematic flow sheet of the method for making of a kind of semi-transparent half screening panel that Fig. 2 provides for embodiments of the invention;
The structural representation one of a kind of semi-transparent half screening panel that Fig. 3 provides for the embodiment of the present invention;
The structural representation two of a kind of semi-transparent half screening panel that Fig. 4 provides for the embodiment of the present invention;
The structural representation three of a kind of semi-transparent half screening panel that Fig. 5 provides for the embodiment of the present invention;
The structural representation one of a kind of mask plate that Fig. 6 provides for the embodiment of the present invention;
The structural representation two of a kind of mask plate that Fig. 7 provides for the embodiment of the present invention;
The structural representation four of a kind of semi-transparent half screening panel that Fig. 8 provides for the embodiment of the present invention;
The structural representation five of a kind of semi-transparent half screening panel that Fig. 9 provides for the embodiment of the present invention;
The structural representation six of a kind of semi-transparent half screening panel that Figure 10 provides for the embodiment of the present invention;
The structural representation three of a kind of mask plate that Figure 11 provides for the embodiment of the present invention.
Embodiment
In below describing, in order to illustrate instead of in order to limit, propose the detail of such as particular system structure, interface, technology and so on, thoroughly to understand the present invention.But, it will be clear to one skilled in the art that and also can realize the present invention in other embodiment not having these details.In other situation, omit the detailed description to well-known device, circuit and method, in order to avoid unnecessary details hinders description of the invention.
In addition, term " first ", " second " only for describing object, and can not be interpreted as instruction or hint relative importance or imply the quantity indicating indicated technical characteristic.Thus, be limited with " first ", the feature of " second " can express or impliedly comprise one or more these features.In describing the invention, except as otherwise noted, the implication of " multiple " is two or more.
Embodiments of the invention provide a kind of method for making of semi-transparent half screening panel, as shown in Figure 2, comprising:
101, on substrate, apply negativity white photoresistance and the transparent photoresistance of positivity respectively, form white light resistance layer and positivity photoresist layer.
Concrete, as shown in Figure 3, substrate 01 applies the white photoresistance of negativity and the transparent photoresistance of positivity respectively, the positivity photoresist layer 12 forming white light resistance layer 11 and be positioned on this white light resistance layer 11.
Wherein, photoresistance can be divided into positivity photoresistance and negativity photoresistance, and the part shining light in positivity photoresistance can be dissolved in photoresistance developer solution, and the part not shining light can not be dissolved in photoresistance developer solution; Accordingly, the part shining light in negativity photoresistance can not be dissolved in photoresistance developer solution, and the part not shining light can be dissolved in photoresistance developer solution.
In addition, substrate 01 applies negativity white photoresistance, after forming white light resistance layer 11, can also carry out soft roasting (Soft bake) white light resistance layer 11, to make the solvent evaporative removal in white light resistance layer 11, and then positive photoresist is applied in white light resistance layer 11, form positivity photoresist layer 12, increase the adhesion between white light resistance layer 11 and positivity photoresist layer 12.
It should be noted that, substrate 01 can be specially glass substrate, or pastes flexible transparent substrate on the glass substrate.And, it will be clear that relate in the embodiment of the present invention semi-transparent partly hides panel, refer to the panel be made up of the transmission region of the lightproof area of certain area and certain area, further, the size of the present invention to lightproof area and transmission region does not impose any restrictions.
102, first time exposure is carried out to positivity photoresist layer, form the first photoresistance pattern after removing the photoresist of exposure area after development, wherein, under the first photoresistance pattern, be coated with unexposed white photoresistance.
As shown in Figure 4, in a step 102, the positivity photoresist layer 12 formed in mask plate 31 pairs of steps 101 is used to carry out first time exposure, because the photoresist in positivity photoresist layer 12 is positivity, therefore, the photoresist of exposure area becomes soluble substance after illumination, after removing the photoresist of exposure area, forms the first photoresistance pattern 13 after development.
Now, as shown in Figure 5, because the white photoresistance in white light resistance layer 11 is negativity, therefore, the region 21 be not exposed in white light resistance layer 11 is covered by the first photoresistance pattern 13, white photoresistance in this region dissolves in photoresistance developer solution, and the region 22 be exposed in white light resistance layer 11 is not capped.
Optionally, when making semi-transparent half in contact panel and hiding panel, because lightproof area is arranged on surrounding or two ends that semi-transparent half hides panel usually, therefore, mask plate 31 as shown in Figure 6 can be selected, wherein, black is light tight region, and white is transmission region, like this, transmission region is arranged on the surrounding of mask plate 311, white photoresistance corresponding with transmission region on substrate 01 is exposed.Or, select mask plate 31 as shown in Figure 7, transmission region is arranged on the two ends of mask plate 31, make white photoresistance corresponding with transmission region on substrate 01 be exposed equally.
Certainly, semi-transparent half set-up mode hiding lightproof area in panel is not limited thereto, such as: only certain edge of substrate 01 can be set to lightproof area, other regions are transmission region, and the present invention is not limited in any way this.
103, on the first photoresistance pattern and the white photoresistance that is exposed, apply black photoresistance, form black light resistance layer.
As shown in Figure 8, through step 103, the white photoresistance be exposed in the first photoresistance pattern 13 and white light resistance layer 11 applies black photoresistance, form black light resistance layer 14.Now, the black photoresistance of coating can be positivity black photoresistance, and also can be negativity black photoresistance, the embodiment of the present invention impose any restrictions this.
In addition, substrate 01 applies black photoresistance, after forming black light resistance layer 14, can also carry out soft roasting (Soft bake) black light resistance layer 14, to make the solvent evaporative removal in black light resistance layer 14, and then increase the adhesion between black light resistance layer 14 and the first photoresistance pattern 13.
104, carry out second time exposure to black light resistance layer, the white light resistance layer covered under the black light resistance layer after development, removal the first photoresistance pattern covered, the first photoresistance pattern and the first photoresistance pattern, form lightproof area.
As shown in Figure 9, at step 104, second time exposure is carried out to the black light resistance layer 14 formed in step 103, now, when in black light resistance layer 14 being negativity black photoresistance, directly can use the mask plate 31 in step 102, in same position, second time exposure is carried out to black light resistance layer 14, now, the black photoresistance be exposed covers on the white photoresistance that is exposed, and unexposed black photoresistance covers on the first photoresistance pattern 13.
Now, because the part shining light in negativity photoresistance can not be dissolved in photoresistance developer solution, and the part not shining light can be dissolved in photoresistance developer solution, and cover the black photoresistance of the first photoresistance pattern about 13 respectively and white photoresistance all unexposed, therefore, after the development of photoresistance developer solution, the black photoresistance that the first photoresistance pattern 13 covers can be removed, simultaneously, the white photoresistance that the first photoresistance pattern covers for 13 times can be removed, and then the first photoresistance pattern 13 is peeled off with white light resistance layer 11 and black light resistance layer 14 respectively, finally, form as shown in Figure 10 semi-transparent and partly hide panel, wherein, this semi-transparent half screening panel comprises the lightproof area be made up of the white light resistance layer 11 retained and black light resistance layer 14.
Or, when in black light resistance layer 14 being positivity black photoresistance, the mask plate 32 (as shown in figure 11) that arrange contrary to light tight region transmission region in mask plate 31 can be used, on the white photoresistance unexposed black photoresistance being covered be exposed, and the black photoresistance be exposed covers on the first photoresistance pattern 13.
Now, because the part not shining light in negativity photoresistance can be dissolved in photoresistance developer solution, and the part shining light in positivity photoresistance can be dissolved in photoresistance developer solution, and positivity black photoresistance can absorb the light of exposure, therefore, by controlling depth of exposure, the black photoresistance covered on the first photoresistance pattern 13 is exposed, dissolve in photoresistance developer solution, and the white photoresistance covered under the first photoresistance pattern 13 is unexposed, also dissolve in photoresistance developer solution, therefore, still can through above-mentioned developing process and stripping technology, to be formed as shown in Figure 10 semi-transparent partly hides panel.
Can find out, through above-mentioned steps 101-104, owing to black light resistance layer being coated on the first photoresistance pattern 13, and first the thickness of photoresistance pattern 13 less, therefore, the black photoresistance that first photoresistance pattern 13 covers can all be washed off by developing process, do not exist because black light hinders the edge accumulating in white photoresistance, and then be difficult to the problem of the black photoresistance washing white photoresistance edge off, accordingly, the method for making of the semi-transparent half screening panel that the embodiment of the present invention provides, can while not increasing exposure frequency, disposable removal covers the black photoresistance of the first photoresistance pattern about 13 and white photoresistance, black photoresistance can not be remained in the edge of the white photoresistance retained, and then improve the color homogeneity of white contact panel.
Accordingly, hide the method for making of panel based on above-mentioned semi-transparent half, embodiments of the invention also provide a kind of as shown in Figure 10 semi-transparent partly to hide panel, and this semi-transparent half hides panel and be made by above-mentioned steps 101-104.
Further, embodiments of the invention also provide a kind of method for making of contact panel, after above-mentioned steps 104, also comprise:
105, on the black photoresistance retained and transmission region, insulation course is formed.
Concrete, can transmission region on substrate as shown in Figure 10 and remain with black photoresistance region on form insulation course.
106, on described insulation course, make touch drive electrode, separate to be formed betwixt the touch sensible electrode of capacitive coupling node with described touch drive electrode and be coupled to described touch sensible electrode to measure the touch control sensing circuit of capacitive coupling node place capacitance variations.
Wherein, this touch drive electrode is corresponding with semi-transparent half transmission region hidden on panel with touch sensible electrode, and this touch control sensing circuit is corresponding with semi-transparent half lightproof area hidden on panel, the white OGS contact panel of final formation.
Accordingly, based on the method for making of above-mentioned contact panel, embodiments of the invention also provide a kind of contact panel, and this contact panel is made by above-mentioned steps 101-106.
Further, the embodiment of the present invention additionally provides a kind of display device, and it comprises above-mentioned contact panel.Wherein, described display device can be: any product or parts with Presentation Function such as liquid crystal panel, Electronic Paper, oled panel, mobile phone, panel computer, televisor, display, notebook computer, digital album (digital photo frame), navigating instrument.
Embodiments of the invention provide a kind of and semi-transparently partly hide panel, contact panel and preparation method thereof and display device, substrate applies negativity white photoresistance and the transparent photoresistance of positivity respectively, forms white light resistance layer and positivity photoresist layer, and then, first time exposure is carried out to positivity photoresist layer, because photoresistance in positivity photoresist layer is positivity, and white photoresistance is negativity, therefore, the photoresist of exposure area is removed after development, the first photoresistance pattern is formed after unexposed photoresist solidification, now, under the first photoresistance pattern, be coated with unexposed white photoresistance, and the white photoresistance in the first unlapped region of photoresistance pattern is exposed, like this, the first photoresistance pattern with the white photoresistance be exposed apply black photoresistance, forms black light resistance layer, and second time exposure is carried out to black light resistance layer, the black light resistance layer that the first photoresistance pattern covers is removed after development, now, because the white photoresistance covered under the first photoresistance pattern is unexposed, and white photoresistance is negativity, therefore, after development, unexposed white photoresistance is also removed, first photoresistance pattern and white photoresistance are peeled off and are removed thereupon, final formed by the white photoresistance after exposing on substrate and be covered in the lightproof area that the black photoresistance on white photoresistance forms, can find out, during the black light resistance layer that removal first photoresistance pattern covers, because the thickness of the first photoresistance pattern is less, the black light resistance layer that the first photoresistance pattern covers is there will not be to be difficult to the problem removed of developing, more can not remain black photoresistance for washing off in the edge of white photoresistance, and then while not increasing exposure frequency, solve the phenomenon that white semi-transparent half hides irregular colour in panel.
In the description of this instructions, specific features, structure, material or feature can combine in an appropriate manner in any one or more embodiment or example.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of described claim.

Claims (10)

1. a method for making for semi-transparent half screening panel, is characterized in that, comprising:
Substrate applies negativity white photoresistance and the transparent photoresistance of positivity respectively, forms white light resistance layer and positivity photoresist layer;
First time exposure is carried out to described positivity photoresist layer, forms the first photoresistance pattern after removing the photoresist of exposure area after development, wherein, under described first photoresistance pattern, be coated with unexposed white photoresistance;
Described first photoresistance pattern with the white photoresistance be exposed apply black photoresistance, forms black light resistance layer;
Second time exposure is carried out to described black light resistance layer, after development, removes the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern, form lightproof area.
2. method for making according to claim 1, is characterized in that, described black photoresistance is negativity.
3. method for making according to claim 1, it is characterized in that, second time exposure is carried out to described black light resistance layer, the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern is removed after development, form lightproof area, comprising:
Described second time exposure is carried out to described black light resistance layer, after development, removes the black photoresistance that described first photoresistance pattern covers;
By developing process and stripping technology, remove described unexposed white photoresistance, and described first photoresistance pattern and described unexposed white photoresistance are peeled off, form described lightproof area at described substrate.
4. method for making according to claim 1, is characterized in that, after substrate applies white photoresistance, also comprises:
Described white light resistance layer is carried out soft roasting.
5. method for making according to claim 1, is characterized in that, described first photoresistance pattern with the white photoresistance be exposed applies black photoresistance, after forming black light resistance layer, also comprises:
Described black light resistance layer is carried out soft roasting.
6. the method for making according to any one of claim 1-5, it is characterized in that, described black light resistance layer is being carried out to second time exposure, the white light resistance layer covered under the black light resistance layer that described first photoresistance pattern covers, described first photoresistance pattern and described first photoresistance pattern is removed after development, after forming lightproof area, also comprise:
The black photoresistance retained and transmission region form insulation course.
7. semi-transparently partly hide a panel, it is characterized in that, described semi-transparent half hides panel is made any one of described claim 1-6.
8. a method for making for contact panel, is characterized in that,
Form described insulation course in described claim 6 after, described method also comprises:
Described insulation course makes and touches drive electrode, separate to be formed betwixt the touch sensible electrode of capacitive coupling node with described touch drive electrode and be coupled to described touch sensible electrode to measure the touch control sensing circuit of capacitive coupling node place capacitance variations.
9. a contact panel, is characterized in that, described contact panel is made by described claim 8.
10. a display device, is characterized in that, comprises contact panel as claimed in claim 9.
CN201510290853.8A 2015-05-29 2015-05-29 A kind of semi-transparent half hides panel, touch panel and preparation method thereof and display device Expired - Fee Related CN104849958B (en)

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CN111628117B (en) * 2020-06-04 2023-06-27 南京华易泰电子科技有限公司 Method for improving photoresist stripping effect in OLED (organic light emitting diode) manufacturing process

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