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CN104835796A - 一种无铅扩散焊的功率模块 - Google Patents

一种无铅扩散焊的功率模块 Download PDF

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CN104835796A
CN104835796A CN201510228842.7A CN201510228842A CN104835796A CN 104835796 A CN104835796 A CN 104835796A CN 201510228842 A CN201510228842 A CN 201510228842A CN 104835796 A CN104835796 A CN 104835796A
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layer
ceramic substrate
semiconductor chip
substrate
welding
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胡少华
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STARPOWER SEMICONDUCTOR LTD.
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JIAXING STARPOWER MICROELECTRONICS CO Ltd
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Abstract

一种无铅扩散焊的功率模块，它主要包括：金属化陶瓷衬底，半导体芯片，键合金属线，第一焊接层，第二焊接层及基板，所述金属化陶瓷衬底由第一铜表面、陶瓷层和第二铜表面通过金属化陶瓷工艺制成，所述的第一焊接层和第二焊接层为片状的复合焊片，由中间金属层和两边焊料合金层复合而成；所述的半导体芯片通过第一焊接层的扩散软钎焊接到金属化陶瓷衬底上；所述的金属化陶瓷衬底通过第二焊接层扩散软钎焊接到基板上；所述半导体芯片通过键合金属线电连接到金属化陶瓷衬底的上面第一金属层上；它具有结构合理，制作工艺简单，既能满足无铅环保的要求，又能提高模块的可靠性，减少热应力造成的疲劳失效，降低生产成本，减少环境污染等特点。

Description

一种无铅扩散焊的功率模块
技术领域
本发明涉及的是一种无铅扩散焊的功率模块，属于半导体功率模块的封装领域。
背景技术
功率模块是在功率电子电路上使用的半导体封装体，比如，封装了绝缘栅双极晶体管（IGBT）芯片，或金属氧化物半导体场效应晶体管（MOSFET）芯片的模块。一些模块也封装有半导体二极管（DIODE）芯片以提供过压保护。以上功率半导体芯片具有一系列电压和电流等级，以适应不同的场合或行业应用。
一般地，除芯片之外，功率模块还包括导热绝缘直接键合铜陶瓷衬底（DBC），基板，功率端子等部件，目前这些部件绝大部分是通过软钎焊（Soft soldering）连接的，如芯片-DBC、DBC-基板之间焊接。
现在应用中已需求更大的功率密度，相应的芯片结温可达175℃甚至200℃，而这就与熔化温度约220℃的标准锡基软钎焊料相矛盾。因为如果使用这种软钎焊料焊接芯片，模块工作时的芯片结温与焊料熔化温度将非常接近，同系温度>0.8（同系温度，homologous temperature，Top/Tmelt=Thom），这将导致焊接层在热应力负载下很快就疲劳失效。
为了解决这个矛盾，至少有三种解决方案。一是使用熔化温度更高的软钎焊焊料。二是银浆烧结技术（Ag paste sintering）。三是扩散焊接技术（diffusion soldering）。一般地，熔化温度更高的焊料通常是高铅合金，但这与无铅化的趋势相矛盾，所以只能作为暂时的解决办法。银浆烧结技术是最近兴起的一种新技术，很有发展前途，但目前看来，有几个不足影响了其大规模应用：材料成本高，待烧结界面需特殊处理，烧结参数极端（大压力或长时间），与现有软钎焊工艺相差较大，需要投资购买新的设备等。
相比而言，扩散焊接技术与现有软钎焊工艺相似，可以参考现有的工艺和设备，都是形成熔化温度高的金属间化合物（Intermetallics compounds，IMCs）。软钎焊只是焊接界面形成薄的一层金属间化合物，焊接层中间还是未反应的焊料合金。而扩散焊接是整个焊接层都转变成金属间化合物，焊接层中没有未反应的焊料合金。根据选择的芯片表面金属和焊料材料，通常形成Ag-Sn，Cu-Sn或Ni-Sn等金属间化合物。这些金属间化合物的熔化温度可达400℃，甚至600℃以上。
由于焊接层的熔化温度有了极大的提高，同系温度<0.65，减少热应力疲劳失效。提高了温度和功率循环能力，提升了模块的可靠性，即保持长期可靠的电气、热、机械连接。
发明内容
本发明的目的在于克服现有技术存在的不足，而提供一种结构合理，制作工艺简单，既能满足无铅环保要求，又能提高模块的可靠性，减少热应力造成的疲劳失效，降低生产成本，减少环境污染的无铅扩散焊的功率模块。
本发明的目的是通过如下技术方案来完成的，一种无铅扩散焊的功率模块，它主要包括：金属化陶瓷衬底，半导体芯片，键合金属线，第一焊接层，第二焊接层及基板，所述金属化陶瓷衬底由第一金属层、陶瓷层和第二金属层通过金属化陶瓷工艺制成，所述的第一焊接层和第二焊接层为片状的复合焊片，由中间金属层和两边焊料合金层复合而成；所述的半导体芯片通过第一焊接层的扩散软钎焊接到金属化陶瓷衬底上；所述的金属化陶瓷衬底通过第二焊接层扩散软钎焊接到基板上；所述半导体芯片通过键合金属线电连接到金属化陶瓷衬底的上面第一金属层上。
所述复合焊片的中间金属层是Ag或Cu，两边的焊料合金层是SnAg系或SnCu系；所述的金属化陶瓷工艺包括直接键合铜工艺（DBC，或称直接覆铜工艺），活性金属钎焊（AMB）工艺，或其它合适的工艺；所述的基板上连接有包围模块上半部分的外壳，并在外壳内填充有包括硅凝胶或者硅凝胶、环氧双层结构之一的填充材料。
所述复合焊片两边焊料合金层通过溅射（sputtering）、层压（laminating）或电镀（plating）方法与中间金属层做成复合焊片；所述外壳包围的模块上部分包括：功率端子的一部分、键合金属线、半导体芯片、第一焊接层、金属化陶瓷衬底第二焊接层，且所述模块的上部分被外壳内的填充材料所覆盖。
所述复合焊片的中间金属层的厚度是25-125微米，两边焊料合金层的厚度是2.5-15微米，所述复合焊片的总厚度是30-155微米。
本发明使用扩散焊接技术，实现芯片与直接键合铜陶瓷衬底（DBC）之间完全生成金属间化合物的焊接，其中焊接原材料是一种复合焊片，其中间一层是金属如Ag，Cu，两边是焊料合金如SnAg系或SnCu系；待焊接表面金属和复合焊片的焊料合金层完全转变成金属间化合物，复合焊片的中间一层金属未熔化。典型的金属间化合物如下：
Cu3Sn，Cu6Sn5，Ag3Sn，Ag6Sn5
焊接过程中，可施加助焊剂或在还原性气氛下还原待焊接表面和复合焊片，以获得良好的焊接性，形成可靠的焊点。若辅以抽真空，焊接层中的气孔则进一步减少，典型地气孔率<5%。
本发明具有结构合理，制作工艺简单，既能满足无铅环保要求，又能提高模块的可靠性，减少热应力造成的疲劳失效，降低生产成本，减少环境污染等特点。
附图说明
图1是本发明所述一个隐去外壳和端子后的模块俯视结构示意图。
图2是本发明所述一个复合焊片的横截面视图。
图3是本发明所述陶瓷衬底上放置复合焊片和半导体芯片的固定框横截面视图。
图4是本发明所述陶瓷衬底上固定框内放置复合焊片的横截面视图。
图5是本发明所述陶瓷衬底上固定框内、复合焊片上放置半导体芯片的横截面视图。
图6是本发明所述芯片-陶瓷衬底在扩散焊接后、移除固定框后半组装体横截面视图。
图7是本发明所述扩散焊接后组装体的局部横截面视图。
图8是本发明所述扩散焊接芯片、元件与陶瓷衬底后的俯视图。
具体实施方式
下面将结合附图对本发明作详细的说明。图1-8所示，本发明所述的一种无铅扩散焊的功率模块，它主要包括：金属化陶瓷衬底020，半导体芯片014，键合金属线006，第一焊接层018，第二焊接层024及基板008，所述金属化陶瓷衬底020由第一金属层020A、陶瓷层020B和第二金属层020C通过金属化陶瓷工艺制成，所述的第一焊接层018和第二焊接层024为片状的复合焊片016，由中间金属层016B和两边焊料合金层016A、016C复合而成；所述的半导体芯片014通过第一焊接层018的扩散软钎焊接到金属化陶瓷衬底020上；所述的金属化陶瓷衬底020通过第二焊接层024扩散软钎焊接到基板008上；所述半导体芯片014通过键合金属线006电连接到金属化陶瓷衬底020的上面第一金属层020A上。
本发明所述复合焊片016的中间金属层016B是Ag或Cu，两边的焊料合金层016A、016C是SnAg系或SnCu系；所述的金属化陶瓷工艺包括直接键合铜工艺（DBC，或称直接覆铜工艺），活性金属钎焊（AMB）工艺，或其它合适的工艺；所述的基板008上连接有包围模块上半部分的外壳002，并在外壳002内填充有包括硅凝胶或者硅凝胶、环氧双层结构之一的填充材料026。
所述复合焊片016两边焊料合金层通过溅射（sputtering）、层压（laminating）或电镀（plating）方法与中间金属层做成复合焊片；所述外壳002包围的模块上部分包括：端子的一部分、键合线、半导体芯片、第一焊接层、金属化陶瓷衬底、第二焊接层，且所述模块的上部分被外壳内的填充材料026所覆盖。
所述复合焊片016的中间金属层的厚度是25-125微米，两边焊料合金层的厚度是2.5-15微米，所述复合焊片的总厚度是30-155微米。
实施例：
图1示出了功率模块的一个实施例800的俯视图（为了显示方便，隐去外壳和端子）。功率模块800是一种使用扩散焊接技术的模块，包括：外壳002（已隐去），端子（已隐去，只留有端子焊盘004，键合金属线006，铜基板008，被动元件010，热敏电阻012，半导体芯片014，扩散焊接半导体芯片014和被动元件010后形成的第一焊接层018，导热绝缘直接键合铜陶瓷衬底020，软钎焊焊接陶瓷衬底020后形成的第二焊接层024，填充材料026（已隐去），以及其它必要的部件等。
导热绝缘直接键合铜陶瓷衬底020是一个烧结体，有三层结构，第一金属层020A，陶瓷020B，第二金属层020C。第一金属层020A和第二金属层020C包括铜、镍或铝等其它合适的材料，陶瓷020B包括Al2O3、AlN、ZrO2增韧Al2O3或Si3N4等其它合适的材料。
复合焊片016是一种新型焊片，中间层016B是一层金属如银或铜，上薄层016A和下薄层016C都是无铅焊料如SnAg或SnCu。这种新型复合焊片016特别开发用于扩散焊接半导体芯片或直接键合铜陶瓷衬底。
复合焊片016熔化后，其上薄层016A与半导体芯片014的背金如Ag或Au反应，反应后形成金属间化合物018A，其下薄层016C与陶瓷衬底的第一金属层020A如Cu，Ni，Ag或Au反应，反应后形成金属间化合物018C。所以，金属间化合物018A、未熔化的中间一层金属018B，以及金属间化合物018C，共同构成第一焊接层018，把半导体芯片014扩散焊接到陶瓷衬底020的第一金属层020A上。
第一焊接层018熔化温度高，使功率模块800的工作温度和可靠性大幅提升。同时，第一焊接层018是无铅的，也符合环境保护的要求，非常巧妙地解决了业界的两个难题。 
可使用软钎焊工艺，形成第二焊接层024，把已经扩散焊接了半导体芯片014的陶瓷衬底020，通过软钎焊焊接陶瓷衬底020的第二金属层020C到铜基板008上。
半导体芯片014通过键合线006电连接到金属层020A。键合线包括Al，Al-Si，Al-Mg，Cu，Au或者其它合适的材料。
外壳002包围模块的上半部分，包括端子004的一部分，键合线006，半导体芯片014，第一焊接层018，导热绝缘金属陶瓷衬底020，第二焊接层024。外壳包括工艺塑料和其它合适的材料。外壳002被连接在金属基板008上。
填充材料026包括硅凝胶或者硅凝胶、环氧双层结构之一，或其它合适的材料。填充材料026防止了由于介电击穿而对功率模块的损坏。填充材料026填充了外壳002以内的区域，包括端子004的一部分，键合线006，半导体芯片014，第一焊接层018，导热绝缘金属陶瓷衬底020，第二焊接层024等。
图2示出了复合焊片016的横截面视图。由三层复合而成，即上薄层016A，中间金属层016B，下薄层016C。
附图3-6示出了将半导体芯片014扩散焊接陶瓷衬底020的实施例。
图3示出了在直接键合铜陶瓷衬底020上放置了一个固定框工具的实施例的横截面视图。该固定框022可以是钛合金，或其它合适的材料，用于固定和定位复合焊片016、半导体芯片014的位置，固定框022平放在金属层020A上。
图4示出了在金属层020A上、固定框022内，放置复合焊片016的一个实施例的横截面视图。
图5示出了在复合焊片016的正上方，放置半导体芯片014的实施例的横截面视图。贴装好的半导体芯片014、复合焊片016、陶瓷衬底020作为一个组装体400，放入焊接设备内扩散焊接。
图6示出了一个扩散焊接好、已经去除固定框022的组装体500的横截面视图。
图7示出了扩散焊焊接后组装体500的焊接结构的局部横截面视图。半导体芯片014，通过扩散焊工艺、使用复合焊片016，实现了与金属层020A之间的牢固可靠的电气、热、机械连接。半导体芯片014与复合焊片016的上薄层016A形成金属间化合物018A，同样，复合焊片016的下薄层016C与金属层020A也形成金属间化合物018C。
图8示出了扩散焊焊接后组装体500的焊接结构的一个俯视图。
扩散焊接完成后，后续可通过软钎焊形成第二焊接层024。然后打键合线006以连接电路，随后可通过超声波焊接端子004以引出信号或功率，然后安装外壳002以提供基本保护，灌填充物026以提高绝缘强度和保护，再经过测试筛选。一个可靠性能更好的功率模块即可生产出来了。

Claims (4)

1.一种无铅扩散焊的功率模块，它主要包括：金属化陶瓷衬底，半导体芯片，键合金属线，第一焊接层，第二焊接层及基板，其特征在于所述金属化陶瓷衬底由第一金属层、陶瓷层和第二金属层通过金属化陶瓷工艺制成，所述的第一焊接层和第二焊接层为片状的复合焊片，由中间金属层和两边焊料合金层复合而成；所述的半导体芯片通过第一焊接层的扩散软钎焊接到金属化陶瓷衬底上；所述的金属化陶瓷衬底通过第二焊接层扩散软钎焊接到基板上；所述半导体芯片通过键合金属线电连接到金属化陶瓷衬底的上面第一金属层上。
2.根据权利要求1所述的无铅扩散焊的功率模块，其特征在于所述复合焊片的中间金属层是Ag或Cu，两边的焊料合金层是SnAg系或SnCu系；所述的金属化陶瓷工艺包括直接键合铜工艺，活性金属钎焊工艺，或其它合适的工艺；所述的基板上连接有包围模块上半部分的外壳，并在外壳内填充有包括硅凝胶或者硅凝胶、环氧双层结构之一的填充材料。
3.根据权利要求2所述的无铅扩散焊的功率模块，其特征在于所述复合焊片两边焊料合金层通过溅射、层压或电镀方法与中间金属层做成复合焊片；所述外壳包围的模块上部分包括：功率端子的一部分、键合金属线、半导体芯片、第一焊接层、金属化陶瓷衬底第二焊接层，且所述模块的上部分被外壳内的填充材料所覆盖。
4.根据权利要求3所述的无铅扩散焊的功率模块，其特征在于所述复合焊片的中间金属层的厚度是25-125微米，两边焊料合金层的厚度是2.5-15微米，所述复合焊片的总厚度是30-155微米。
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