CN104810349B - A kind of differential inductor - Google Patents
A kind of differential inductor Download PDFInfo
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- CN104810349B CN104810349B CN201410035674.5A CN201410035674A CN104810349B CN 104810349 B CN104810349 B CN 104810349B CN 201410035674 A CN201410035674 A CN 201410035674A CN 104810349 B CN104810349 B CN 104810349B
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Abstract
The present invention provides a kind of differential inductor, comprises at least：First port, second port and bottom coil；Connected between the Internal and external cycle wire coil of the bottom coil by some first oblique line connectors with interleaved mode；Formed with a circle top-level metallic coil directly over the outmost turns wire coil of the bottom coil；If the top-level metallic coil is connected by the first port, second port and dry contact with the bottom coil with parallel way；Only outmost turns wire coil stacks and shares all wire coils in the bottom coil in addition to outmost turns wire coil between the top-level metallic coil and the bottom coil.The present invention inductor in it is in parallel between top layer coil and bottom coil and only outermost metal coil stacking, reduce coupled capacitor；Junction thickness increase simultaneously, improves coil electricity ability and reduces loss；The two collective effect, can integrally lift inductor q-value more than 15%.
Description
Technical field
The invention belongs to semiconductor applications, are related to a kind of differential inductor.
Background technology
At present, substantial amounts of passive device is contained in integrated circuits, on-chip inductor is exactly wherein highly important one kind,
On-chip inductor is one of critical elements of RF CMOS/BiCMOS integrated circuits.In common wireless product, inductance element pair
Total radio-frequency performance has critically important influence.Therefore the design to these inductance elements and analysis have also obtained extensive research.
Core component of the inductance as radio circuit, it can generally have influence on the overall performance of whole circuit.At present, high quality factor
On-chip inductor be widely used in the RF circuit modules such as voltage controlled oscillator, low-noise amplifier.Inductance quality factor q value is
Weigh the major parameter of inductance component, when it refers to that inductor works under the alternating voltage of a certain frequency, the induction reactance that is presented
The ratio between with its equivalent loss resistance.The Q values of inductor are higher, and its loss is smaller, and efficiency is higher.
It is less and less with the process node of CMOS technology, it is contemplated that production line preceding working procedure（FEOL）In come from polycrystalline
The heat distribution of silicon/active area density and production line later process（BEOL）Middle density metal may influence process uniformity and steady
Qualitative, diffusion region, polysilicon and metal needs will meet certain density requirements, i.e., must reach least density.Integrated circuit
Essence is exactly that the electronic components such as the transistor needed for circuit, diode, resistance, electric capacity and inductance are incorporated into semiconductor wafer
On, complete logic circuit is formed, to reach the functions such as control, calculating or memory.As a rule, integrated circuit includes multilayer
Electronic component layer, it is attached by plain conductor between each layer.In general, layer of metal wiring is completed, after progress
Before continuous process, processing is planarized to the film on chip or the profile of layer, it is smooth necessary to integrated circuit to ensure
Degree.The mode of planarization process generally use chemically mechanical polishing.However, planar profile is led to caused by CMP process
The pattern density of bottom is often relied on, in order to prevent causing surface after chemically-mechanicapolish polishing because bottom pattern density is uneven
Such as there is the problem of groove in out-of-flatness, and common practice is to insert virtual filler, example in the sparse region of each layer pattern at present
Such as：Virtual active area, dummy gate and dummy metal layers etc..In addition, in the processing step of etching, the high area of density metal
The etch rate in domain and the low region of density metal is different, the problem of etching deficiency or excessive etching easily occurs.
Traditional RF IC technique is typically thickeied using top-level metallic, and several layers of metals typically all use below top layer
The way of thin metal reduces the resistivity of top-level metallic.So on-chip inductor is made using the top-level metallic thickeied, so that it may
To improve the quality factor q value of on-chip inductor.Therefore traditional differential inductance, is typically all produced on top-level metallic.It is in addition, folded
The on-chip inductor of layer largely reduces chip area, reduces production cost.Meanwhile inductor arrangement is obtained and substrate
At a distance of as far as possible remote, can reduce due to inductance and substrate interaction and be formed to the electric capacity between substrate.By inductor cloth
It is that the top layer of substrate integrated circuit apart from each other is favourable to improving inductance Q value although putting, but inductor bottom can be caused
The pattern density of layer is too small, is unfavorable for surface smoothness, and the problem of above-mentioned etching deficiency or excessive etching easily occurs.In order to
Reach minimum metal density requirements, it usually needs dummy metal is filled below inductor area.However, due in dummy metal
Vortex can be produced, the presence of dummy metal can reduce the Q values of inductor, and the Q values more than 15% can be brought to reduce.
In order to reach more preferable circuit performance, designer can take the top-level metallic further thickeied to lift Q values, but
It is that this way can increase production cost.Generally, designer obtains enough Q performances by increasing coil width, such as every
The width of coil up to 15 microns, but this way need chip area being designed to it is bigger.Existing three end differential inductance
As shown in Figure 1 to Figure 3, it uses two layers of coil to stack to device, and levels coil is identical and is connected with parallel way, per layer line
Circle takes the mode of cross wiring, and wherein Fig. 1 is the structural representation of the three ends differential inductor, and Fig. 2 is that its decomposition texture shows
It is intended to, Fig. 3 is the side view of structure shown in Fig. 2.But this differential inductor structure will reach higher Q values and still need ratio
Larger area, it is unfavorable for reducing chip size.
Therefore it provides a kind of inductor with more high q-factor under equal area is necessary.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of differential inductor, for solving
The problem of certainly differential inductor quality factor q value is relatively low in the prior art.
In order to achieve the above objects and other related objects, the present invention provides a kind of differential inductor, comprises at least：
First port and the second port being oppositely arranged with the first port；
Bottom coil, from the first port along a path around the second port, form from outside to inside at least two
Enclose wire coil；The first port and second port are located at the outmost turns wire coil both ends of the bottom coil respectively；Institute
State and connected by some first oblique line connectors with interleaved mode between the Internal and external cycle wire coil of bottom coil；
Formed with a circle top-level metallic coil directly over the outmost turns wire coil of the bottom coil；The top-level metallic
If coil is connected by the first port, second port and dry contact with the bottom coil with parallel way；The top layer
Only outmost turns wire coil is stacked and shared in the bottom coil except outmost turns gold between wire coil and the bottom coil
Belong to all wire coils beyond coil.
Alternatively, the differential inductor also include it is at least one be connected in parallel with the first oblique line connector second
Oblique line connector；The second oblique line connector is located at same layer with the top-level metallic coil.
Alternatively, the thickness of the second oblique line connector is more than the thickness of the first oblique line connector.
Alternatively, the differential inductor also includes a centre cap, and the centre cap is in the bottom coil cabling
Drawn at the half of length by contact.
Alternatively, the outer ring wire coil of the bottom coil at half-turn around inner ring wire coil adjacent thereto.
Alternatively, the top-level metallic coil is transitioned into the secondary outer layer metal coil of the bottom coil at half-turn.
Alternatively, the bottom coil includes 3~20 circle wire coils from outside to inside.
Alternatively, the bottom coil in the horizontal plane be projected as octagon, square or circular, the top wire
Circle corresponds to octagon, square or circular.
Alternatively, the line width of the bottom coil Internal and external cycle wire coil is equal.
Alternatively, the top-level metallic coil is equal with the outmost turns wire coil line width of the bottom coil.
As described above, the differential inductor of the present invention, has the advantages that：All stacked relative to upper/lower layer metallic
Inductor, in parallel between top-level metallic coil and bottom coil in inductor of the invention and only outermost metal coil stacks
It is folded, the coupled capacitor of top layer coil is reduced under conditions of inductor inductance value is not changed, reaches the inductor q-value higher than 7% and carries
Rise；Further, since the first oblique line connector is located at lower floor and thinner thickness, and alternative increases by second in the present invention
Oblique line connector, the first oblique line connector and the second oblique line connector superposition, thickness increase, reduce ectonexine coil it
Between connection resistance, so as to improve coil electricity ability and reduce loss, inductor q-value is further improved about 7%.Two
Person's collective effect, inductor q-value can be integrally lifted more than 15%.
Brief description of the drawings
Fig. 1 is shown as the structural representation of differential inductor in the prior art.
Fig. 2 is shown as the decomposition texture schematic diagram of differential inductor in the prior art.
Fig. 3 is shown as the side view of structure shown in Fig. 2.
Fig. 4 is shown as the structural representation of the differential inductor of the present invention.
Fig. 5 is shown as the decomposition texture signal of the differential inductor of the present invention.
Fig. 6 is shown as the side view of structure shown in Fig. 5.
The curve map that the Q values of differential inductor and conventional differential inductor that Fig. 7 is shown as the present invention change with frequency.
Component label instructions
1 first port
2 second ports
3 bottom coils
4 first oblique line connectors
5 top-level metallic coils
6 second oblique line connectors
7 contacts
8 centre caps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 4 is referred to Fig. 7.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of differential inductor, comprises at least：
First port and the second port being oppositely arranged with the first port；
Bottom coil, from the first port along a path around the second port, form from outside to inside at least two
Enclose wire coil；The first port and second port are located at the outmost turns wire coil both ends of the bottom coil respectively；Institute
State and connected by some first oblique line connectors with interleaved mode between the Internal and external cycle wire coil of bottom coil；
Formed with a circle top-level metallic coil directly over the outmost turns wire coil of the bottom coil；The top-level metallic
If coil is connected by the first port, second port and dry contact with the bottom coil with parallel way；The top layer
Only outmost turns wire coil is stacked and shared in the bottom coil except outmost turns gold between wire coil and the bottom coil
Belong to all wire coils beyond coil.
Fig. 4 to Fig. 7 is the differential inductor of one embodiment of the invention, and the schematic diagram is example, herein should not mistake
Degree limitation the scope of protection of the invention.
Referring initially to Fig. 4 to Fig. 6, wherein, Fig. 4 is shown as the structural representation of the differential inductor of the present invention, and Fig. 5 shows
The decomposition texture schematic diagram of the differential inductor of the present invention is shown as, Fig. 6 is shown as the side view of structure shown in Fig. 5.As illustrated,
The differential inductor of the present invention comprises at least first port 1, the second port 2 being oppositely arranged with the first port 1, bottom line
If circle 3, some first oblique line connector 4, top-level metallic coil 5 and dry contacts 7.
Specifically, the first port 1 and second port 2 are double-decker, respectively with the whole story two of bottom coil 3
End and the connection of the whole story both ends of the top-level metallic coil 5, if the first port is connected about 1 between two layers by dry contact 7,
If the second port connects about 2 between two layers also through dry contact 7.
Specifically, the bottom coil 3 from the first port 1 along a path around the second port 2, formed by
Outer and interior at least two circles wire coil；The first port 1 and second port 2 are located at the outmost turns of the bottom coil 3 respectively
Wire coil both ends；By some first oblique line connectors 4 with the side of intersection between the Internal and external cycle wire coil of the bottom coil 3
Formula connects.
As an example, the bottom coil 3 includes 3~20 circle wire coils, in the present embodiment, the bottom from outside to inside
Coil 3 illustrates exemplified by including three-layer metal coil.The winding mode of the bottom coil is：By the first port 1
Start from outmost turns wire coil edge clockwise about half-turn, then by a first oblique line connector 6 around adjacent thereto
Secondary outer ring wire coil and clockwise along the layer line circle around half-turn, then by second the first oblique line connector 6 around innermost layer
Wire coil, then clockwise along innermost layer wire coil around a circle, and by the 3rd the first oblique line connector 6 around secondary outer
Layer wire coil, around after half-turn again by the 4th the first oblique line connector 6 around outermost metal coil and finally around
To the second port 2.Wherein, the first oblique line of part connector 6 occurs overlapping, and to avoid short circuit, overlapping two first oblique
Wire connections are arranged on different layers, and the first oblique line connector and the bottom coil on upper strata are located at same layer and directly and institute
The different circle wire coil connections of bottom coil are stated, the first oblique line connector of lower floor is located at below the bottom coil and passed through
Contact circle wire coil connection different from the bottom coil.
Other number of plies wire coils are included for the bottom coil 3, similar winding can be used.It may be noted that
Be, above-mentioned method for winding for the bottom coil outer ring wire coil at half-turn around inner ring coil adjacent thereto,
In other embodiments, other winding modes can also be used, around another coil such as at a quarter circle, as long as meet from
Coiling outmost turns start, and terminate from outmost turns, should not too limit the scope of the invention herein.
Specifically, the top-level metallic coil 5 is a circle wire coil；The top-level metallic coil 5 is formed at the bottom
Directly over the outermost metal coil of layer line circle 3, and if by the first port 1, second port 2 and dry contact 7 with it is described
Bottom coil 3 is connected with parallel way；Only outmost turns wire coil between the top-level metallic coil 5 and the bottom coil 3
Stack and share all wire coils in the bottom coil in addition to outmost turns wire coil.
As an example, the top-level metallic coil 5 is connected at half-turn by the contact 7 with the bottom coil 3, and
Realized in the presence of the first oblique line connector 4 with the bottom coil 3 in parallel.The cabling of the top-level metallic coil 5
Mode is then to pass through the contact 7 and first oblique line in one direction around half-turn first since the first port 1
Connector 4 is transitioned into the secondary outer layer of the bottom coil 3, and along the bottom coil 3 cabling mode successively from outside to inside, then
Successively from inside to outside, connected eventually through the contact 7 from the other half-turn of the top-level metallic coil 5 and return to second end
Mouth 2.The bottom coil 3 is connected with the top-level metallic coil 5 using parallel way, and only outermost metal coil stacks simultaneously
All wire coils in addition to outmost turns wire coil in the bottom 3 are shared, in the situation that inductor overall inductance is constant
Under, the number of turns of top-level metallic coil greatly reduces, and so as to reduce the coupled capacitor of top-level metallic coil, can reach higher than 7%
Inductor q-value is lifted.
In the present embodiment, at least one and the first oblique line connector further can be set in the differential inductor
4 the second oblique line connectors 6 being connected in parallel；The second oblique line connector 6 is located at same layer with the top-level metallic coil 5.
If it is pointed out that connected between the top-level metallic coil 5 and the bottom coil 3 by dry contact 7, described first
Parallel connection is achieved that under the connection function of oblique line connector 4.The presence of the second oblique line connector 6 is not necessarily.However,
Because the first oblique line connector 4 is positioned at the lower section of top-level metallic coil 5, thinner thickness, the bottom is particularly at
The thickness of the first oblique line connector 4 of the lower section of layer line circle 3 is thinner, so as to which resistance is larger, adds device loss.
The presence of the second oblique line connector 6 can reduce the connection resistance of junction.In the present embodiment, preferably wrap
Two the second oblique line connectors 6 are included, respectively directly over the first oblique line connector 4 of lower floor.Second oblique line connects
The thickness of fitting 6 is preferably greater than the thickness of the first oblique line connector 4.The second oblique line connector and part first are oblique
Wire connections are superimposed, and connect part ectonexine wire coil on the basis of top-level metallic coil 5 is in parallel with the bottom coil 3
Place's thickness increase is connect, reduces the connection resistance between ectonexine coil, so as to improve coil electricity ability and reduce loss,
Inductor q-value can be made further to improve about 7%.The two collective effect, can integrally lift inductor q-value more than 15%.
As an example, the bottom coil 3 in the horizontal plane be projected as octagon, the square or symmetric figure such as circular,
The top-level metallic coil 5 corresponds to octagon, the square or symmetric figure such as circular.The Internal and external cycle metal wire of bottom coil 3
The line width of circle is equal, naturally it is also possible to unequal.The outmost turns metal wire of the top-level metallic coil 5 and the bottom coil 3
The line width of circle is equal.
The differential inductor of the present invention can also further comprise centre cap 8, and the centre cap 8 is in the bottom coil
Drawn at the half of 3 track lengths by contact, realize three end differential inductor performances.It is pointed out that the difference of the present invention
Divide inductor to be equally applicable to both ends differential inductor, as long as removing the centre cap, be unillustrated herein.
Referring to Fig. 7, the song that the Q values for the differential inductor and conventional differential inductor for being shown as the present invention change with frequency
Line chart.Differential inductor of the present invention is by taking the differential inductor of above-mentioned three end as an example herein.It is seen that the differential electrical of the present invention
The Q values of sensor are up to 18.4, and the Q value peaks for the conventional differential inductor that levels all stack only have 15.7, the present invention
Reach 17.2% relative to the Q value liftings of conventional differential inductor.
In summary, in parallel between top-level metallic coil and bottom coil in differential inductor of the invention and only outmost turns
Wire coil stacks, the inductor all stacked relative to upper/lower layer metallic, and the present invention is not changing the condition of inductor inductance value
Under reduce the coupled capacitor of top-level metallic coil, reach the inductor q-value lifting higher than 7%；Further, since described first is oblique
Wire connections are located at lower floor and thinner thickness, and alternative increases by the second oblique line connector in the present invention, and described first is oblique
Wire connections and the superposition of the second oblique line connector, the increase of junction thickness, reduce the connection resistance between ectonexine coil, from
And improve coil electricity ability and reduce loss, inductor q-value is further improved about 7%.In the collective effect of the two
Under, inductor entirety Q values lifting can be more than 15%.So the present invention effectively overcomes various shortcoming of the prior art and had
High industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of differential inductor, is comprised at least：
First port and the second port being oppositely arranged with the first port；
Bottom coil, from the first port along a path around the second port, form at least two circle gold from outside to inside
Belong to coil；The first port and second port are located at the outmost turns wire coil both ends of the bottom coil respectively；The bottom
Connected between the Internal and external cycle wire coil of layer line circle by some first oblique line connectors with interleaved mode；
It is characterized in that：
Formed with a circle top-level metallic coil directly over the outmost turns wire coil of the bottom coil；The top-level metallic coil
If it is connected by the first port, second port and dry contact with the bottom coil with parallel way；The top-level metallic
Only outmost turns wire coil is stacked and shared outmost turns metal wire is removed in the bottom coil between coil and the bottom coil
All wire coils beyond circle.
2. differential inductor according to claim 1, it is characterised in that：The differential inductor also include it is at least one with
The second oblique line connector that the first oblique line connector is connected in parallel；The second oblique line connector and the top wire
Circle is located at same layer.
3. differential inductor according to claim 2, it is characterised in that：The thickness of the second oblique line connector is more than institute
State the thickness of the first oblique line connector.
4. differential inductor according to claim 1, it is characterised in that：The differential inductor is also taken out including a center
Head, the centre cap are drawn at the half of the bottom coil track lengths by contact.
5. differential inductor according to claim 1, it is characterised in that：The outer ring wire coil of the bottom coil is half
Around inner ring wire coil adjacent thereto at circle.
6. differential inductor according to claim 5, it is characterised in that：The top-level metallic coil is transitioned at half-turn
The secondary outer layer metal coil of the bottom coil.
7. differential inductor according to claim 1, it is characterised in that：The bottom coil includes 3~20 from outside to inside
Enclose wire coil.
8. differential inductor according to claim 1, it is characterised in that：The bottom coil being projected as in the horizontal plane
Octagon, square or circular, the top-level metallic coil corresponds to octagon, square or circular.
9. differential inductor according to claim 1, it is characterised in that：The line of the bottom coil Internal and external cycle wire coil
It is wide equal.
10. differential inductor according to claim 1, it is characterised in that：The top-level metallic coil and the bottom line
The outmost turns wire coil line width of circle is equal.
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| CN201410035674.5A CN104810349B (en) | 2014-01-24 | 2014-01-24 | A kind of differential inductor |
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| CN201410035674.5A CN104810349B (en) | 2014-01-24 | 2014-01-24 | A kind of differential inductor |
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| CN104810349B true CN104810349B (en) | 2017-12-29 |
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| CN106856121B (en) * | 2015-12-09 | 2019-04-26 | 中芯国际集成电路制造(上海)有限公司 | Induction structure and forming method thereof |
| CN106856142B (en) * | 2015-12-09 | 2018-10-16 | 中芯国际集成电路制造(上海)有限公司 | Induction structure and preparation method thereof |
| CN109524216A (en) * | 2019-01-10 | 2019-03-26 | 广西芯百特微电子有限公司 | A kind of distribution wire-wound inductor device and device |
| CN111238544B (en) * | 2020-03-12 | 2022-10-21 | 江苏林洋能源股份有限公司 | Microwave sensor based on LC resonator for temperature/humidity environment detection |
| TWI714488B (en) * | 2020-03-30 | 2020-12-21 | 瑞昱半導體股份有限公司 | Inductor device |
| CN113539608B (en) * | 2020-04-17 | 2024-03-19 | 厦门市三安集成电路有限公司 | Inductor and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US7463112B1 (en) * | 2007-11-30 | 2008-12-09 | International Business Machines Corporation | Area efficient, differential T-coil impedance-matching circuit for high speed communications applications |
| US7576607B2 (en) * | 2008-01-03 | 2009-08-18 | Samsung Electro-Mechanics | Multi-segment primary and multi-turn secondary transformer for power amplifier systems |
| FR2936349B1 (en) * | 2008-09-23 | 2010-10-01 | St Microelectronics Sa | INDUCTANCE WITH REDUCED SURFACE AND IMPROVED CONDUCTION CAPACITY OF IMPROVED STRONG FORTS. |
| CN102087908A (en) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | Stack type differential inductor |
| CN102087912A (en) * | 2009-12-08 | 2011-06-08 | 上海华虹Nec电子有限公司 | Laminated differential inductor with top layer metal and second layer metal of equal thickness |
| CN102110517A (en) * | 2009-12-24 | 2011-06-29 | 上海华虹Nec电子有限公司 | Semiconductor differential inductance structure |
| US9276056B2 (en) * | 2010-05-27 | 2016-03-01 | Texas Instruments Incorporated | Baluns for RF signal conversion and impedance matching |
| CN103077809A (en) * | 2011-10-26 | 2013-05-01 | 上海华虹Nec电子有限公司 | Symmetrical stacked inductor structure and winding method thereof |
| MY165848A (en) * | 2012-03-26 | 2018-05-17 | Silterra Malaysia Sdn Bhd | Parallel stacked symmetrical and differential inductor |
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