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CN104784816A - Cuff electrode having garland structure and manufacturing method thereof - Google Patents

Cuff electrode having garland structure and manufacturing method thereof Download PDF

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Publication number
CN104784816A
CN104784816A CN201510142082.8A CN201510142082A CN104784816A CN 104784816 A CN104784816 A CN 104784816A CN 201510142082 A CN201510142082 A CN 201510142082A CN 104784816 A CN104784816 A CN 104784816A
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electrode
kraft
garland
layer
strip
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CN104784816B (en
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喻晓雪
余怀强
李志宏
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Peking University
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Peking University
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Abstract

The invention provides a cuff electrode having a garland structure. The cuff electrode having the garland structure comprises a stripped belt (1), an extensible garland structure (2), a lead (3), an electrode point (4), a ratchet (5), a lock ring (7), a lock ring opening (6) and a lead node (8). According to the garland structure, after the cuff electrode is planted, the stripped belt is extended along swelling of nerves, tissues are not pressed, neurhumor is not blocked due to the hollow garland structure, meanwhile the electrode point and the nerves are in close contact, and the exciting effect and the signal recording accuracy are guaranteed.

Description

一种具有拉花结构的卡夫电极及其制造方法A kind of kraft electrode with pull flower structure and its manufacturing method

技术领域technical field

本发明涉及微纳加工技术领域、生物医学工程领域,尤其涉及一种具有拉花结构的卡夫电极及其制造方法。The invention relates to the technical field of micro-nano processing and the field of biomedical engineering, in particular to a kraft electrode with a patterned structure and a manufacturing method thereof.

背景技术Background technique

卡夫电极作为一种植入式的神经电极,可以用于记录神经信号和刺激神经组织。通过对神经组织的刺激,可以实现对相应肌肉运动的控制,从而恢复脊髓损伤患者的部分功能障碍。As an implantable nerve electrode, Kraft electrode can be used to record nerve signals and stimulate nerve tissue. Through the stimulation of the nerve tissue, the control of the corresponding muscle movement can be realized, so as to restore some dysfunctions of the spinal cord injury patients.

现有的卡夫电极将需要刺激部分的神经区域完全包裹,这种完全包裹神经组织的方式会导致被包裹区域的营养液被阻塞。同时,植入电极后,神经组织易发生肿胀,且由于卡夫电极的直径在植入完成后固定不变,会造成神经组织被压迫。Existing Kraft electrodes will need to completely wrap the stimulated part of the nerve area, and this way of completely wrapping the nerve tissue will cause the nutrient solution in the wrapped area to be blocked. At the same time, after the electrode is implanted, the nerve tissue is prone to swelling, and since the diameter of the Kraft electrode is fixed after the implantation is completed, the nerve tissue will be compressed.

现有的卡夫电极包括美敦力公司的美国专利申请,专利号US5344438,一种只包裹部分神经的U型卡夫电极,这种电极可以减轻神经压迫,但是不能刺激和记录整个神经,同时,也容易被外界干扰。Existing kraft electrodes include Medtronic's U.S. patent application, patent No. US5344438, a U-shaped kraft electrode that only wraps part of the nerve. This electrode can relieve nerve compression, but it cannot stimulate and record the entire nerve. easily disturbed by the outside world.

北京大学的专利申请,专利号201410024820,一种植入式卡夫神经电极及其制作方法,根据扎带的构造提出了一种直径可调的扎带式卡夫电极,可以通过扎带棘齿的设计,精确控制卡夫直径,但是这种电极的直径在植入之后并不可调,同样可能会造成神经的压迫。Peking University's patent application, patent number 201410024820, an implantable kraft nerve electrode and its manufacturing method. According to the structure of the tie, a tie-type kraft electrode with adjustable diameter is proposed, which can be passed through the ratchet of the tie. Designed to precisely control the diameter of the Kraft, but the diameter of this electrode is not adjustable after implantation, which may also cause nerve compression.

综上所述,现有的卡夫电极存在植入后直径不可调,组织易肿胀,对神经压迫大,营养液阻塞等问题。To sum up, the existing Kraft electrodes have problems such as non-adjustable diameter after implantation, easy tissue swelling, large nerve compression, and blockage of nutrient solution.

发明内容Contents of the invention

本发明提供一种具有拉花结构的卡夫电极,包括长条带子(1),可拉伸的拉花结构(2),引线(3),电极点(4),棘齿(5),锁环(7),锁环开口(6)以及引线结点(8),所述拉花结构(2)设置在长条带子(1)的中间,且连接着长条带子(1);引线(3)和电极点(4)在拉花结构(2)的同一侧。The invention provides a kraft electrode with a patterned structure, comprising a long strip (1), a stretchable patterned structure (2), a lead wire (3), an electrode point (4), a ratchet (5), lock ring (7), lock ring opening (6) and lead node (8), the garland structure (2) is arranged in the middle of the strip (1), and is connected with the strip (1); the lead (3) and the electrode point (4) are on the same side of the pattern structure (2).

本发明能够产生的有益效果是:1、在卡夫电极的带子上使用拉花结构,可以保证神经肿胀时,电极带子能够随着神经的肿胀自动拉伸,减少植入电极对神经的损伤和压迫;2、卡夫电极采用拉花结构,神经不完全被包住,一部分能与外界很好地相连,使得体内的营养液不会被阻塞;3、电极点采用凸起的三维结构,使其能够与神经有着更好的接触,保证了刺激和记录的效果。The beneficial effects that can be produced by the present invention are: 1. Using a pattern structure on the belt of the Kraft electrode can ensure that when the nerve is swollen, the electrode belt can automatically stretch along with the swelling of the nerve, reducing the damage and damage to the nerve caused by the implanted electrode. 2. The kraft electrode adopts a latte structure, the nerve is not completely covered, and part of it can be well connected with the outside world, so that the nutrient solution in the body will not be blocked; 3. The electrode point adopts a raised three-dimensional structure, so that It can have a better contact with the nerve, ensuring the effect of stimulation and recording.

附图说明Description of drawings

图1是本发明具有拉花结构的卡夫电极示意图;Fig. 1 is a schematic diagram of a kraft electrode with a garland structure in the present invention;

图2是本发明具有拉花结构的卡夫电极中拉花的波浪形结构方式;Fig. 2 is the wavy structural mode of the garland in the kraft electrode with the garland structure of the present invention;

图3中(a)~(b)是本发明具有拉花结构的卡夫电极中拉花的菱形结构方式。(a)-(b) in Fig. 3 are the rhombus structure of the pattern in the Kraft electrode with the pattern structure of the present invention.

附图标记说明:Explanation of reference signs:

1:卡夫带子1: Kraft tape

2:拉花结构2: Latte structure

3:引线3: Lead

4:金属电极4: Metal electrode

5:棘齿5: Ratchet

6:锁环开口6: Lock ring opening

7:锁环7: Lock ring

8:引线结点8: Lead node

9:波浪形拉花结构中添加的强度增强结构9: The strength-enhancing structure added in the wavy pull flower structure

10:菱形拉花结构中添加的强度增强结构10: The strength-enhancing structure added to the diamond-shaped pull flower structure

具体实施方式Detailed ways

下面结合说明书附图和实施例,对本发明的具体实施方式作进一步详细描述。以下实施例仅用于说明本发明,但不能用来限制本发明的范围。The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are only used to illustrate the present invention, but can not be used to limit the scope of the present invention.

如图1所示,本发明具有拉花结构的卡夫电极包括长条带子(1),可拉伸的拉花结构(2),引线(3),电极点(4),棘齿(5),锁环(7),锁环开口(6)以及引线结点(8)。所述拉花结构(2)设置在长条带子(1)的中间,且连接着长条带子(1);引线(3)和电极点(4)在拉花结构(2)的同一侧。As shown in Figure 1, the present invention has the kraft electrode of garland structure and comprises elongated tape (1), stretchable garland structure (2), lead wire (3), electrode point (4), ratchet (5) ), lock ring (7), lock ring opening (6) and lead junction (8). The patterned structure (2) is arranged in the middle of the strip (1) and connected to the strip (1); the lead wire (3) and the electrode point (4) are on the same side of the patterned structure (2).

所述长条带子(1)和拉花结构(2)是由同种材料制成,该材料为具有生物兼容性的聚合物薄膜,可以是具有生物兼容性的聚对二甲苯。所述引线(3)和电极点(4)由同种材料制成并具有导电性能,该材料可以是由物理汽相淀积生长的钛、金、铂等金属薄膜。The strip (1) and the patterned structure (2) are made of the same material, which is a polymer film with biocompatibility, which may be parylene with biocompatibility. The lead wire (3) and the electrode point (4) are made of the same material and have electrical conductivity, and the material can be a metal film such as titanium, gold, platinum, etc. grown by physical vapor deposition.

其中,长条带子(1)的宽度为6mm,长度为15mm,厚度为10~20μm;Wherein, the width of the strip (1) is 6 mm, the length is 15 mm, and the thickness is 10-20 μm;

其中,引线宽度为40μm,电极点的大小为400μm×400μm或者500μm×500μm;Wherein, the width of the lead wire is 40 μm, and the size of the electrode point is 400 μm×400 μm or 500 μm×500 μm;

其中,所述拉花结构(2)包括波浪拉花结构及菱形拉花结构,波浪拉花结构及菱形拉花结构的边长宽度为100μm×250μm。参见附图1-3,优选的,该波浪拉花结构的两边之间的夹角为10~170°,该菱形拉花结构的两边之间的夹角为10~170°,在一个实施例中,该波浪拉花结构和该菱形拉花结构的两边之间的夹角可以为10°,在一个实施例中,该波浪拉花结构和该菱形拉花结构的两边之间的夹角可以为90°,在一个实施例中,该波浪拉花结构和该菱形拉花结构的两边之间的夹角可以为170°,同时,各边连接处存在强度增强结构。Wherein, the garland structure (2) includes a wavy garland structure and a diamond-shaped garland structure, and the side length and width of the wavy garland structure and the diamond-shaped garland structure are 100 μm×250 μm. Referring to accompanying drawings 1-3, preferably, the angle between the two sides of the wavy pattern structure is 10-170°, and the angle between the two sides of the diamond-shaped pattern structure is 10-170°. In one embodiment Among them, the angle between the two sides of the wavy structure and the rhombus structure can be 10°, and in one embodiment, the angle between the two sides of the wavy structure and the rhombus structure can be In one embodiment, the included angle between the two sides of the wavy patterned structure and the diamond-shaped patterned structure may be 170°, and at the same time, there is a strength-enhancing structure at the connection of each side.

其中,电极点(4)是三维凸起结构,高于长条带子(1)。Wherein, the electrode point (4) is a three-dimensional convex structure, which is higher than the strip (1).

所述棘齿(5)分两列存在于长条带子的两侧,每一列可以有多个,距离棘齿开口(6)的距离可以设置成不同固定直径对应的圆的周长。The ratchets (5) exist on both sides of the strip in two rows, each row can have multiple, and the distance from the ratchet opening (6) can be set to the circumference of a circle corresponding to different fixed diameters.

所述棘齿(5)和锁环(7)由同种材料组成,该材料具有一定的机械强度,可以是通过电镀而得到的金属镍。The ratchet (5) and the lock ring (7) are made of the same material, which has certain mechanical strength, and can be metal nickel obtained by electroplating.

本发明所述的具有拉花结构的卡夫电极的制备方法,包括以下步骤:The preparation method of the kraft electrode with garland structure of the present invention comprises the following steps:

在硅片上生长氧化硅/氮化硅层,其中氧化硅层位于下层,氮化硅层位于上层,通过光刻做出刻蚀正面氮化硅的掩膜,刻蚀氧化硅,将需要腐蚀的硅表面露出,利用KOH腐蚀一定深度的硅;A silicon oxide/silicon nitride layer is grown on a silicon wafer, in which the silicon oxide layer is located in the lower layer and the silicon nitride layer is located in the upper layer. A mask for etching the front silicon nitride is made by photolithography. Etching silicon oxide will require etching The silicon surface is exposed, and the silicon is etched to a certain depth by KOH;

采用物理汽相淀积在有凹槽的硅片上生长一层牺牲层Al;在Al上淀积一层聚对二甲苯;A layer of sacrificial Al is grown on a grooved silicon wafer by physical vapor deposition; a layer of parylene is deposited on Al;

采用剥离工艺制备材料为钛/金/铂的电极点和引线,并在其上淀积第二层聚对二甲苯;Electrode points and leads made of titanium/gold/platinum are prepared by a lift-off process, and a second layer of parylene is deposited thereon;

利用光刻、电镀等工艺步骤制备出锁环及棘齿;The lock ring and ratchet are prepared by photolithography, electroplating and other process steps;

通过光刻、刻蚀等将电极点露出,并进一步刻蚀得到锁环的开口及电极的轮廓。Expose the electrode points by photolithography, etching, etc., and further etch to obtain the opening of the lock ring and the contour of the electrode.

以上内容是结合具体的优选实施方式对本发明所作的进一步详细说明,不能认定本发明的具体实施只局限于这些说明。对于本发明所属技术领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干简单推演或替换,都应当视为属于本发明的保护范围。The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be assumed that the specific implementation of the present invention is limited to these descriptions. For those of ordinary skill in the technical field of the present invention, without departing from the concept of the present invention, some simple deduction or replacement can be made, which should be regarded as belonging to the protection scope of the present invention.

Claims (8)

1.一种具有拉花结构的卡夫电极,包括长条带子(1),可拉伸的拉花结构(2),引线(3),电极点(4),棘齿(5),锁环(7),锁环开口(6)以及引线结点(8),所述拉花结构(2)设置在长条带子(1)的中间,且连接着长条带子(1);引线(3)和电极点(4)在拉花结构(2)的同一侧。1. A kraft electrode with a garland structure, including a long strip (1), a stretchable garland structure (2), a lead wire (3), an electrode point (4), a ratchet (5), a lock Ring (7), locking ring opening (6) and lead wire node (8), described drawing flower structure (2) is arranged in the middle of strip (1), and is connected with strip (1); lead wire ( 3) and the electrode point (4) are on the same side of the pattern structure (2). 2.如权利要求1所述的具有拉花结构的卡夫电极,其中,所述长条带子(1)和拉花结构(2)是由同种材料制成,该材料为具有生物兼容性的聚合物薄膜。2. The kraft electrode with garland structure as claimed in claim 1, wherein, said strip (1) and garland structure (2) are made of the same material, which is biocompatible polymer film. 3.如权利要求1所述的具有拉花结构的卡夫电极,其中,所述引线(3)和电极点(4)也由同种材料制成,该材料具有导电性能。3. The Kraft electrode with a patterned structure according to claim 1, wherein the lead wire (3) and the electrode point (4) are also made of the same material, and the material has electrical conductivity. 4.如权利要求6所述的具有拉花结构的卡夫电极,其中,该波浪拉花结构的两边之间的夹角为10~170°,该菱形拉花结构的两边之间的夹角为10~170°,同时,各边连接处存在强度增强结构。4. The kraft electrode with a patterned structure as claimed in claim 6, wherein the angle between the two sides of the wave patterned structure is 10-170°, and the angle between the two sides of the rhombus patterned structure 10-170°, and at the same time, there is a strength-enhancing structure at the connection of each side. 5.如权利要求1所述的具有拉花结构的卡夫电极,其中,所述电极点(4)是三维凸起结构,高于长条带子(1)。5. The kraft electrode with garland structure according to claim 1, wherein the electrode point (4) is a three-dimensional raised structure, which is higher than the strip (1). 6.如权利要求1所述的具有拉花结构的卡夫电极,其中,所述棘齿(5)分两列存在于长条带子的两侧,每一列可以有多个,距离棘齿开口(6)的距离可以设置成不同固定直径对应的圆的周长。6. The kraft electrode with garland structure as claimed in claim 1, wherein the ratchets (5) exist on both sides of the strip in two rows, each row can have multiple, and the distance from the ratchet opening The distance in (6) can be set as the circumference of circles corresponding to different fixed diameters. 7.如权利要求1所述的具有拉花结构的卡夫电极,其中,所述棘齿(5)和锁环(7)由同种材料组成,该材料可以是通过电镀而得到的金属镍。7. The kraft electrode with pull flower structure as claimed in claim 1, wherein said ratchet (5) and lock ring (7) are made up of the same material, which can be metal nickel obtained by electroplating . 8.一种具有拉花结构的卡夫电极的制造方法,包括以下步骤:8. A method for manufacturing a kraft electrode with a patterned structure, comprising the following steps: 在硅片上生长氧化硅/氮化硅层,其中氧化硅层位于下层,氮化硅层位于上层,通过光刻做出刻蚀正面氮化硅的掩膜,刻蚀氧化硅,将需要腐蚀的硅表面露出,利用KOH腐蚀一定深度的硅;A silicon oxide/silicon nitride layer is grown on a silicon wafer, in which the silicon oxide layer is located in the lower layer and the silicon nitride layer is located in the upper layer. A mask for etching the front silicon nitride is made by photolithography. Etching silicon oxide will require etching The silicon surface is exposed, and the silicon is etched to a certain depth by KOH; 采用物理汽相淀积在有凹槽的硅片上生长一层牺牲层A1;在A1上淀积一层聚对二甲苯;A layer of sacrificial layer A1 is grown on the grooved silicon wafer by physical vapor deposition; a layer of parylene is deposited on A1; 采用剥离工艺制备材料为钛/金/铂的电极点和引线,并在其上淀积第二层聚对二甲苯;Electrode points and leads made of titanium/gold/platinum are prepared by a lift-off process, and a second layer of parylene is deposited thereon; 利用光刻、电镀等工艺步骤制备出锁环及棘齿;The lock ring and ratchet are prepared by photolithography, electroplating and other process steps; 通过光刻、刻蚀等将电极点露出,并进一步刻蚀得到锁环的开口及电极的轮廓。Expose the electrode points by photolithography, etching, etc., and further etch to obtain the opening of the lock ring and the contour of the electrode.
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CN112472096B (en) * 2020-12-11 2024-03-19 西北工业大学 Stress-induced self-curling reticular kappa neural electrode and preparation method thereof

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