CN104779923B - A kind of radio frequency amplifying circuit and its power spreading module - Google Patents
A kind of radio frequency amplifying circuit and its power spreading module Download PDFInfo
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- CN104779923B CN104779923B CN201510080052.9A CN201510080052A CN104779923B CN 104779923 B CN104779923 B CN 104779923B CN 201510080052 A CN201510080052 A CN 201510080052A CN 104779923 B CN104779923 B CN 104779923B
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Abstract
The present invention provides a kind of radio frequency amplifying circuit and its power spreading module.The radio frequency amplifying circuit includes：Switch element, its control end is coupled to input via the first capacitance, and its first end is electrically coupled to output end via the second capacitance；Biasing resistor, its one end is coupled to the control end of switch element；First bias supply, for providing the bias voltage between the control end of switch element and the second end；Second bias supply, for providing the bias voltage between the first end of switch element and the second end；And power spreading module, including diode, resistance, controlling switch and voltage extended source, the negative electrode of diode is coupled to the control end of switch element, and one end of resistance is concatenated to the anode of diode, and the second end of controlling switch is connected with one end of voltage extended source.Compared to prior art, the present invention can efficiently control the gain characteristic of radio-frequency power amplifier, while not influenceing its fundamental characteristics, and have the advantages that simple and easy to apply and miniaturization.
Description
Technical Field
The present invention relates to a power amplification technology for rf signals, and more particularly, to an rf amplifier circuit with power expansion function and a power expansion module for the same.
Background
Radio Frequency Power Amplifiers (RFPAs) are important components of various wireless transmitters. In the front stage circuit of the transmitter, the radio frequency signal power generated by the modulation oscillation circuit is very small, and the radio frequency signal power needs to pass through a series of amplification buffer stages, middle amplification stages and final power amplification stages, so that the radio frequency power with enough intensity can be fed to the antenna and radiated out. In order to obtain a radio frequency output power that meets the specifications, a radio frequency power amplifier must be used.
For rf power amplifiers, the power gain refers to the ratio of the output power to the input power of the amplifier, and is usually expressed in dB (decibel). In the prior art, as the input radio frequency signal increases, the output signal after radio frequency amplification also rises. However, as the output power of the amplifier increases, the power gain of the radio frequency power amplifier gradually decreases due to the inherent property of its own gain compression.
In view of the above, a problem to be solved by those skilled in the art is how to maintain or increase the power gain when the rf power amplifier outputs a larger power, so as to compensate for the gain reduction caused by the inherent property of gain compression.
Disclosure of Invention
In view of the above-mentioned drawbacks of the prior art radio frequency amplifying circuit, the present invention provides a radio frequency amplifying circuit with power expansion function and a power expansion module for the radio frequency amplifying circuit.
According to an aspect of the present invention, there is provided a radio frequency amplifying circuit having a power spreading function, the radio frequency amplifying circuit including:
a control terminal of the switch element is electrically coupled to the input terminal of the radio frequency amplification circuit through a first blocking capacitor, a first terminal of the switch element is electrically coupled to an inductor and is electrically coupled to the output terminal of the radio frequency amplification circuit through a second blocking capacitor, and a second terminal of the switch element is electrically coupled to the ground terminal;
a bias resistor having one end electrically coupled to the control end of the switching element;
the first bias power supply is arranged between the other end of the bias resistor and the grounding end and used for providing bias voltage between the control end and the second end of the switch element;
the second bias power supply is arranged between the inductor and the grounding end and used for providing bias voltage between the first end and the second end of the switch element; and
the power expansion module comprises a diode, a resistor, a control switch and a voltage expansion source, wherein the cathode of the diode is coupled to the control end of the switch element, one end of the resistor is connected to the anode of the diode in series, the first end of the control switch is connected with the other end of the resistor, the second end of the control switch is connected with one end of the voltage expansion source, and the other end of the voltage expansion source is connected with the grounding end.
In one embodiment, the control switch is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or a Transistor.
In one embodiment, the resistance of the power spreading module is an external resistance or a parasitic resistance of the diode.
In one embodiment, when the control switch is turned off, the power expansion module is in a disabled state (disabled); when the control switch is conducted, the power expansion module is in an enabled state (enabled).
In one embodiment, when a valley swing of the rf signal from the input terminal exceeds a difference between the threshold voltages of the voltage spreading source and the diode, the diode maintains a high resistance and the power spreading module is turned off; when the valley swing of the radio frequency signal from the input end is smaller than or equal to the difference between the threshold voltages of the voltage expansion source and the diode, the diode is conducted and the power expansion module is started.
In one embodiment, the valley voltage of the rf signal is clamped to the difference between the threshold voltages of the voltage spreading source and the diode.
In accordance with another aspect of the present invention, there is provided a radio frequency amplifying circuit having a power spreading function, the radio frequency amplifying circuit including:
a control terminal of the switch element is electrically coupled to the input terminal of the radio frequency amplification circuit through a first blocking capacitor, a first terminal of the switch element is electrically coupled to an inductor and is electrically coupled to the output terminal of the radio frequency amplification circuit through a second blocking capacitor, and a second terminal of the switch element is electrically coupled to the ground terminal;
a bias resistor having one end electrically coupled to the control end of the switching element;
the first bias power supply is arranged between the other end of the bias resistor and the grounding end and used for providing bias voltage between the control end and the second end of the switch element;
the second bias power supply is arranged between the inductor and the grounding end and used for providing bias voltage between the first end and the second end of the switch element; and
and the power expansion module comprises a diode and a resistor which are connected in series, wherein the cathode of the diode is coupled to the control end of the switching element, one end of the resistor is connected to the anode of the diode, and the other end of the resistor is connected to the first bias power supply and the bias resistor.
In one embodiment, the switching element is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or a Transistor.
In one embodiment, the resistance of the power spreading module is an external resistance or a parasitic resistance of the diode.
In one embodiment, when the diode is turned off, the power spreading module is in a disabled state (disabled); when the diode is turned on, the power expansion module is in an enabled state (enabled).
In one embodiment, when the difference between the voltages of the first bias power supply and the control terminal of the switching element is smaller than the threshold voltage of the diode, the diode keeps high resistance and the power spreading module is turned off; when a difference between the voltages of the first bias power supply and the control terminal of the switching element is greater than a threshold voltage of the diode, the diode is turned on to establish a path from the first bias power supply to the control terminal of the switching element to raise the voltage of the control terminal of the switching element.
According to another aspect of the present invention, there is provided a power expansion module for a radio frequency amplifying circuit, the radio frequency amplifying circuit including a switching element having a control terminal electrically coupled to a radio frequency input terminal via a first dc blocking capacitor, a first terminal electrically coupled to a radio frequency output terminal via a second dc blocking capacitor, and a second terminal electrically coupled to a ground terminal, the power expansion module comprising:
a diode having a cathode electrically coupled to the control terminal of the switching element;
a resistor coupled in series with an anode of the diode; and
a voltage spreading source having a first terminal electrically coupled to the resistor and coupled to the control terminal of the switching element via a bias resistor, and a second terminal electrically coupled to the ground terminal.
In one embodiment, the resistance of the power spreading module is an external resistance or a parasitic resistance of the diode.
In one embodiment, when the diode is turned off, the power spreading module is in a disabled state; when the diode is turned on, the power expansion module is in an enabled state (enabled).
In one embodiment, when a difference between the voltages of the voltage spreading source and the control terminal of the switching element is less than a threshold voltage of the diode, the diode maintains a high resistance and the power spreading module is turned off; when a difference between the voltages of the voltage spreading source and the control terminal of the switching element is greater than a threshold voltage of the diode, the diode is turned on to establish a path from the voltage spreading source to the control terminal of the switching element to raise the voltage of the control terminal of the switching element.
In an embodiment of the present invention, the power expansion module further includes a control switch, and the power expansion module is enabled or disabled by turning on or off the control switch.
In one embodiment, the control switch is disposed in any one of:
the cathode of the diode and the control end of the switching element;
the anode of the diode is connected with the resistor;
the connection point of the bias resistor and the voltage expansion source is connected with the resistor.
In one embodiment, the control switch is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or a Transistor.
By adopting the radio frequency amplifying circuit and the power expansion module thereof, when the valley amplitude of the radio frequency signal from the input end exceeds the difference between the threshold voltages of the voltage expansion source and the diode, the diode keeps high resistance and the power expansion module is closed, and when the valley amplitude of the radio frequency signal is less than or equal to the difference between the threshold voltages of the voltage expansion source and the diode, the diode is conducted and the power expansion module is opened, so that the valley voltage of the radio frequency signal is clamped at the difference between the threshold voltages of the voltage expansion source and the diode. As the rf input signal continues to rise, the minimum valley voltage remains constant, thus increasing the bias voltage of the rf power amplifier and the power gain of the amplifier accordingly. Compared with the prior art, the invention can effectively control the gain characteristic of the radio frequency power amplifier without influencing the basic characteristic, and has the advantages of simplicity, practicability and miniaturization.
Drawings
The various aspects of the present invention will become more apparent to the reader after reading the detailed description of the invention with reference to the attached drawings. Wherein,
fig. 1 is a schematic diagram illustrating a structure of a radio frequency amplifying circuit in the prior art;
fig. 2 is a schematic diagram of an rf amplifying circuit with power spreading function according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a radio frequency amplifying circuit with a power spreading function according to another embodiment of the present invention;
fig. 4A is a graph showing a time domain characteristic of a gate-source voltage of a switching element in the rf amplifier circuit of fig. 1;
FIG. 4B is a graph showing the gate-source voltage of the switching element as a function of the input power in the RF amplifying circuit of FIG. 1;
fig. 5A is a graph showing a time domain characteristic of a gate-source voltage of a switching element in the rf amplifying circuit of fig. 2 or 3;
fig. 5B is a graph showing the gate-source voltage of the switching element as a function of the input power in the rf amplifying circuit of fig. 2 or 3; and
fig. 6 shows a schematic diagram comparing power gain versus output power curves between the rf amplifying circuit of fig. 2 or 3 and the rf amplifying circuit of fig. 1.
Detailed Description
In order to make the present disclosure more complete and complete, reference is made to the accompanying drawings, in which like references indicate similar or analogous elements, and to the various embodiments of the invention described below. However, it will be understood by those of ordinary skill in the art that the examples provided below are not intended to limit the scope of the present invention. In addition, the drawings are only for illustrative purposes and are not drawn to scale.
Fig. 1 shows a schematic structure of a radio frequency amplifying circuit in the prior art. Referring to fig. 1, the conventional rf amplifying circuit includes a switching element T1, a bias resistor RBIAS, a first bias power supply VBIAS, and a second bias power supply VSUPPLY. Here, the switching element T1 may be a MOSFET or a transistor, and the gate of the MOSFET corresponds to the base of the transistor, the drain of the MOSFET corresponds to the collector of the transistor, and the source of the MOSFET corresponds to the emitter of the transistor. The MOSFET will be described below as an example.
The gate of the switching element T1 is electrically coupled to an input terminal Pin of the rf amplifying circuit through a first blocking capacitor CRFIN, where a voltage of the input terminal Pin is labeled as VIN. The drain of the switching element T1 is electrically coupled to an inductor LVDD and to an output terminal Pout of the rf amplifying circuit through a second blocking capacitor CRFOUT, where the voltage of the output terminal Pout may be denoted as VOUT. The source of the switch device T1 is electrically coupled to ground. One end of the bias resistor RBIAS is electrically coupled to the gate of the switching element T1.
The first bias power supply VBIAS is disposed between the other end of bias resistor RBIAS and ground. The first bias power supply VBIAS is for supplying a bias voltage between the gate and the source of the switching element T1. The second bias power supply VSUPPLY is disposed between the inductor LVDD and the ground terminal. The second bias power supply VSUPPLY is used to provide a bias voltage between the drain and source of the switching element T1.
As can be seen from fig. 1, when the rf signal from the input terminal Pin increases, the rf signal output from the output terminal Pout also rises until it is saturated and remains unchanged. However, no matter how the input power of the rf signal increases, the gate-source voltage of the switching element T1 is always equal to the first bias power VBIAS, which will cause the power gain of the rf amplifier circuit to gradually decrease with the increase of the output power, affecting the gain characteristic of the circuit.
Fig. 2 is a schematic diagram of an rf amplifying circuit with power spreading function according to an embodiment of the present invention.
Comparing fig. 2 with fig. 1, the main difference is that in the embodiment of the present invention as shown in fig. 2, the rf amplifying circuit further includes a power spreading module. In detail, the power expansion module includes a diode D2, a resistor R2, a control switch T2, and a voltage expansion source VEXP. The cathode of the diode D2 is coupled to the control terminal of the switching element T1. One end of the resistor R2 is connected in series to the anode of the diode D2. In one embodiment, the resistor R2 is an external resistor connected in series to the diode D2. Alternatively, the resistor R2 may be a parasitic resistor of the diode D2. In addition, the control switch T2 can be a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) or a Transistor.
The gate of the control switch T2 is configured to receive the control signal EXPAND _ EN. For example, when the control signal expandin _ EN is at a low level, the control switch T2 is turned off, the power expansion module is in a disabled state (disabled) at this time, and no conducting loop exists between the voltage expansion source VEXP and the gate voltage VGATE of the switching element T1; when the control signal EXPAND _ EN is at a high level, the control switch T2 is closed, the power expansion module is in an enabled state (enabled), and a conductive loop is formed between the voltage expansion source VEXP and the gate voltage VGATE of the switch element T1. The drain of the control switch T2 is connected to the other end of the resistor R2, and the source of the control switch T2 is connected to one end of the voltage expansion source VEXP. The other end of the voltage expansion source VEXP is connected with the ground terminal. It will be understood by those skilled in the art that the control switch T2 may be disposed not only between the voltage expansion source VEXP and the resistor R2, but also between the cathode of the diode D2 and the gate of the switching element T1; or between the anode of diode D2 and resistor R2.
As can be seen from fig. 2, when the valley swing of the rf signal from the input Pin exceeds the difference between the voltage spreading source VEXP and the threshold voltage of the diode D2, the diode D2 maintains high resistance and the power spreading module is turned off; when the valley swing of the rf signal from the input Pin is less than or equal to the difference between the voltage spreading source VEXP and the threshold voltage of the diode D2, the diode D2 is turned on and the power spreading module is turned on. Further, when the power expansion module is turned on, the valley voltage of the rf signal is clamped to the difference between the voltage expansion source VEXP and the threshold voltage of the diode D2. In this way, as the rf input signal continues to rise, the minimum valley voltage remains unchanged, and finally the bias voltage of the rf power amplifier circuit rises, thereby increasing the power gain of the amplifier circuit.
It should be understood by those skilled in the art that the power spreading module of fig. 2 is disposed at the input end of the rf amplifying circuit, and in other embodiments, the power spreading module may also be disposed at the output end of the rf amplifying circuit. For example, in a circuit with multiple stages of rf amplifiers, the power spreading module of the present invention can be disposed at the input of the rf amplifier of the previous stage, and also disposed at the output of the rf amplifier of the previous stage (i.e., the input of the rf amplifier of the next stage), which can also increase the power gain in the whole circuit.
Fig. 3 is a schematic diagram of a radio frequency amplifying circuit with a power spreading function according to another embodiment of the present invention.
Comparing fig. 3 with fig. 1, the main difference is that in the embodiment of the present invention as shown in fig. 3, the rf amplifying circuit further includes a power spreading module. In detail, the power spreading module includes a diode D3, a resistor R3, and a voltage spreading source VBIAS, wherein the voltage spreading source is implemented in common with the first bias power supply. The cathode of the diode D3 is coupled to the control terminal of the switching element T1. One end of the resistor R3 is connected in series to the anode of the diode D3, and the other end of the resistor R3 is connected to the voltage spread source VBIAS and the bias resistor RBIAS. In one embodiment, the resistor R3 is an external resistor connected in series to the diode D3. Or the resistor R3 may be a parasitic resistor of the diode D3.
Similarly, when the diode D3 is off, the power spreading module is in a disabled state (disabled); when the diode D3 is turned on, the power expansion module is in an enabled state (enabled). Further, when the difference between VBIAS of the first bias power source (i.e., the voltage spreading source of fig. 3) and the gate voltage VGATE of switching element T1 is less than the threshold voltage of diode D3, diode D3 remains high-resistance and the power spreading module is turned off; when the difference between the first bias power supply VBIAS and the gate voltage VGATE of the switching element T1 is greater than the threshold voltage of the diode D3, the diode D3 is turned on to establish a path from the first bias power supply VBIAS to the gate of the switching element T1 to raise the gate voltage of the switching element T1.
Likewise, when the power spreading module is turned on, the valley voltage of the rf signal is clamped to the difference between VBIAS, the threshold voltage of diode D3. In this way, as the rf input signal continues to rise, the minimum valley voltage remains unchanged, and finally the bias voltage of the rf power amplifier circuit rises, thereby increasing the power gain of the amplifier circuit.
In an embodiment, the power spreading module in fig. 3 may additionally be provided with a control switch as shown in fig. 2, and the control switch may be provided between the cathode of the diode D3 and the gate of the switching element T1, between the anode of the diode D3 and the resistor R3, or between the connection point of the bias resistor RBIAS and the voltage spreading source VBIAS and the resistor R3.
Fig. 4A is a diagram showing a time domain characteristic curve of a gate-source voltage of a switching element in the radio frequency amplifying circuit of fig. 1. Fig. 4B is a graph showing the gate-source voltage of the switching element as a function of the input power in the rf amplifier circuit of fig. 1. Fig. 5A is a diagram showing a time domain characteristic curve of a gate-source voltage of a switching element in the radio frequency amplifying circuit of fig. 2 or 3. Fig. 5B is a graph showing the gate-source voltage of the switching element as a function of the input power in the rf amplifier circuit of fig. 2 or 3. Fig. 6 shows a schematic diagram comparing power gain versus output power curves between the rf amplifying circuit of fig. 2 or 3 and the rf amplifying circuit of fig. 1.
As can be seen from fig. 4A and 4B, when the power of the rf input signal increases, the dc portion of the gate-source voltage VGS of the switching element T1 is always kept constant at the bias voltage VBIAS, and the valley voltage of the rf signal is not limited. In contrast, in fig. 5A and 5B, as the power of the rf input signal increases, the valley voltage of the rf signal is clamped to the difference of the voltage spread source VBIAS and the threshold voltage of diode D3 (i.e., VBIAS-Vth). In this way, as the power of the rf input signal increases, the minimum valley voltage remains unchanged, and finally the dc portion of the gate-source voltage VGS of the switching element T1 gradually rises from VBIAS, the bias voltage of the switching element T1 rises, and the power gain of the circuit increases. Further, in the graph of fig. 6, L1 represents the power gain-output power curve when the power expansion module is not used, and L2 represents the power gain-output power curve when the power expansion module is used, it is easy to know that the power gain of the conventional rf amplifying circuit gradually decreases when the power of the rf output signal increases, and the rf amplifying circuit of the present invention can maintain or increase the power gain until the switching element T1 is saturated.
By adopting the radio frequency amplifying circuit and the power expansion module thereof, when the valley amplitude of the radio frequency signal from the input end exceeds the difference between the threshold voltages of the voltage expansion source and the diode, the diode keeps high resistance and the power expansion module is closed, and when the valley amplitude of the radio frequency signal is less than or equal to the difference between the threshold voltages of the voltage expansion source and the diode, the diode is conducted and the power expansion module is opened, so that the valley voltage of the radio frequency signal is clamped at the difference between the threshold voltages of the voltage expansion source and the diode. As the rf input signal continues to rise, the minimum valley voltage remains constant, thus increasing the bias voltage of the rf power amplifier and the power gain of the amplifier accordingly. Compared with the prior art, the invention can effectively control the gain characteristic of the radio frequency power amplifier without influencing the basic characteristic, and has the advantages of simplicity, practicability and miniaturization.
Hereinbefore, specific embodiments of the present invention are described with reference to the drawings. However, those skilled in the art will appreciate that various modifications and substitutions can be made to the specific embodiments of the present invention without departing from the spirit and scope of the invention. Such modifications and substitutions are intended to be included within the scope of the present invention as defined by the appended claims.
Claims (10)
1. A radio frequency amplification circuit having a power spreading function, the radio frequency amplification circuit comprising:
a control terminal of the switch element is electrically coupled to the input terminal of the radio frequency amplification circuit through a first blocking capacitor, a first terminal of the switch element is electrically coupled to an inductor and is electrically coupled to the output terminal of the radio frequency amplification circuit through a second blocking capacitor, and a second terminal of the switch element is electrically coupled to the ground terminal;
a bias resistor having one end electrically coupled to the control end of the switching element;
the first bias power supply is arranged between the other end of the bias resistor and the grounding end and used for providing bias voltage between the control end and the second end of the switch element;
the second bias power supply is arranged between the inductor and the grounding end and used for providing bias voltage between the first end and the second end of the switch element; and
the power expansion module comprises a diode, a resistor, a control switch and a voltage expansion source, wherein the cathode of the diode is coupled to the control end of the switch element, one end of the resistor is connected to the anode of the diode in series, the first end of the control switch is connected with the other end of the resistor, the second end of the control switch is connected with one end of the voltage expansion source, and the other end of the voltage expansion source is connected with the grounding end.
2. The rf amplifying circuit according to claim 1, wherein the resistance of the power spreading module is an additional resistance or a parasitic resistance of the diode.
3. The rf amplifying circuit according to claim 1, wherein when a valley swing of the rf signal from the input terminal exceeds a difference between the voltage spreading source and a threshold voltage of the diode, the diode remains high-resistance and the power spreading module is turned off; when the valley swing of the radio frequency signal from the input end is smaller than or equal to the difference between the threshold voltages of the voltage expansion source and the diode, the diode is conducted and the power expansion module is started.
4. The RF amplification circuit of claim 3, wherein a valley voltage of the RF signal is clamped to a difference between the voltage spreading source and a threshold voltage of the diode.
5. A radio frequency amplification circuit having a power spreading function, the radio frequency amplification circuit comprising:
a control terminal of the switch element is electrically coupled to the input terminal of the radio frequency amplification circuit through a first blocking capacitor, a first terminal of the switch element is electrically coupled to an inductor and is electrically coupled to the output terminal of the radio frequency amplification circuit through a second blocking capacitor, and a second terminal of the switch element is electrically coupled to the ground terminal;
a bias resistor having one end electrically coupled to the control end of the switching element;
the first bias power supply is arranged between the other end of the bias resistor and the grounding end and used for providing bias voltage between the control end and the second end of the switch element;
the second bias power supply is arranged between the inductor and the grounding end and used for providing bias voltage between the first end and the second end of the switch element; and
and the power expansion module comprises a diode and a resistor which are connected in series, wherein the cathode of the diode is coupled to the control end of the switching element, one end of the resistor is connected to the anode of the diode, and the other end of the resistor is connected to the first bias power supply and the bias resistor.
6. The radio frequency amplification circuit according to claim 5, wherein when a difference between the voltages of the first bias power supply and the control terminal of the switching element is smaller than a threshold voltage of the diode, the diode maintains a high resistance and the power spreading module is turned off; when the difference between the voltages of the first bias power supply and the control terminal of the switching element is greater than the threshold voltage of the diode, the diode is turned on to establish a path from the first bias power supply to the control terminal of the switching element to raise the voltage of the control terminal of the switching element.
7. A power expansion module for a radio frequency amplification circuit, the radio frequency amplification circuit including a switching element having a control terminal electrically coupled to a radio frequency input terminal via a first blocking capacitor, a first terminal electrically coupled to a radio frequency output terminal via a second blocking capacitor, and a second terminal electrically coupled to a ground terminal, the power expansion module comprising:
a diode having a cathode electrically coupled to the control terminal of the switching element;
a resistor coupled in series with an anode of the diode; and
a voltage spreading source having a first terminal electrically coupled to the resistor and coupled to the control terminal of the switching element via a bias resistor, and a second terminal electrically coupled to the ground terminal.
8. The power spreading module according to claim 7, wherein when a difference between the voltages of the voltage spreading source and the control terminal of the switching element is less than a threshold voltage of the diode, the diode maintains a high resistance and the power spreading module is turned off; when the difference between the voltages of the voltage spreading source and the control terminal of the switching element is greater than the threshold voltage of the diode, the diode is turned on to establish a path from the voltage spreading source to the control terminal of the switching element to raise the voltage of the control terminal of the switching element.
9. The power spreading module of claim 7, further comprising a control switch, wherein the power spreading module is enabled or disabled by turning on or off the control switch, respectively.
10. The power expansion module of claim 9, wherein the control switch is provided to any one of:
the cathode of the diode and the control end of the switching element;
the anode of the diode is connected with the resistor;
the connection point of the bias resistor and the voltage expansion source is connected with the resistor.
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| CN201510080052.9A CN104779923B (en) | 2015-02-13 | 2015-02-13 | A kind of radio frequency amplifying circuit and its power spreading module |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862952A (en) * | 2005-05-11 | 2006-11-15 | 株式会社瑞萨科技 | High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier |
| CN200976570Y (en) * | 2006-11-24 | 2007-11-14 | 华中科技大学 | High-frequency power amplifier circuit |
| CN102655434A (en) * | 2011-03-02 | 2012-09-05 | 苏州英诺迅科技有限公司 | Power detector of radio frequency power amplifier |
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| JP4417069B2 (en) * | 2003-10-15 | 2010-02-17 | Ｎｅｃエレクトロニクス株式会社 | Semiconductor integrated circuit |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1862952A (en) * | 2005-05-11 | 2006-11-15 | 株式会社瑞萨科技 | High frequency power amplifier, transmitter and mobile communication terminal using the power amplifier |
| CN200976570Y (en) * | 2006-11-24 | 2007-11-14 | 华中科技大学 | High-frequency power amplifier circuit |
| CN102655434A (en) * | 2011-03-02 | 2012-09-05 | 苏州英诺迅科技有限公司 | Power detector of radio frequency power amplifier |
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