CN104779922B - For optimizing the high voltage envelope tracker of radio-frequency power amplifier performance - Google Patents
For optimizing the high voltage envelope tracker of radio-frequency power amplifier performance Download PDFInfo
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Abstract
The invention discloses a kind of for optimizing the high voltage envelope tracker of radio-frequency power amplifier performance, including boost module, voltage reduction module, linear power supply drive module；The boost module, according to single-ended envelope signal VAMPBy supply voltage VBATIt is changed into a DC voltage more bigger than largest enveloping signal, the DC voltage is powered to voltage reduction module and linear power supply drive module；The voltage reduction module and linear power supply drive module coordinate together powers to radio-frequency power amplifier so as to fulfill a distortionless power supply envelope；The linear power supply drive module receives the envelope signal input V of a pair of of differenceenvpAnd Venvn.The power supply envelope of radio-frequency power amplifier can be controlled to optimize efficiency of the power amplifier under wider output power range and improve its bandwidth of operation, the efficiency of entire radio-frequency power amplification system can be improved.
Description
Technical field
The invention belongs to technical field of radio frequency integrated circuits, and in particular to a kind of power supply bag for controlling radio-frequency power amplifier
Network with optimize efficiency of the power amplifier under wider output power range and improve its bandwidth of operation for optimizing radio frequency
The high voltage envelope tracker of power amplifier properties.
Background technology
Radio-frequency power amplifier is critical component indispensable in various wireless communications applications, for transceiver is defeated
The brewed radiofrequency signal gone out carries out power amplification, to meet the power requirement of the radiofrequency signal needed for wireless communication.Due to existing
For portable radio communication equipment generally use battery powered, thus it is very strict to the power consumption requirements of used unit in equipment.
Radio-frequency power amplifier is a main power consumption component in transceiver, it is therefore necessary to reduce its power as far as possible
Consumption improves the efficiency of radio-frequency power amplifier.The method of raising efficiency of RF power amplifier has following several at present：
1. optimize the linear efficiency of radio-frequency power amplifier
By the way that Design of RF Power Amplifier is worked in the Switch radio-frequency power amplifier such as Class-E or Class-F
State can promote the efficiency of radio-frequency power amplifier, for example, its efficiency when power amplifier works in Class-E states
It can reach more than 75%.However, this kind of efficient switch power amplifier can sacrifice the linearity of power amplifier, because
This is only applicable to the modulation system that saturation power is required to export, for example 2G GSM modulation systems, and is not suitable for 3G, 4G and WiFi
Etc. the modulation system that linear power is needed to export.
2.Doherty radio-frequency power amplifiers
Comprising two-way power amplification branch in Doherty radio-frequency power amplifiers, all the way as main power amplifier, work
In the preferable Class-AB states of the less efficient but linearity；In addition all the way as auxiliary power amplifier, work in efficiency compared with
High but poor linearity Class-B/C states.Two-way power amplifier passes through impedance variations and power in respective output terminal
Synthesizer completes power combing.Doherty power amplifier makes it in wider output by this active load modulation technology
Higher efficiency is all kept in power bracket, and will not seriously sacrifice the indexs such as the linearity of power amplifier.But Doherty
Active load modulation technology in power amplifier usually requires that the microstrip transmission line of large-size, therefore Doherty power is put
Big device only has wide application in fields such as wireless base stations, and can not directly be applied in portable radio terminal.
3.Outphasing radio-frequency power amplifiers
Chireix modulation（Outphasing）The variable envelope tune that radio-frequency power amplifier requires linear prower amplifier by one
Signal decomposition processed be two constant envelope signals, and using two efficient Class-E/F power amplifiers respectively to this two
A constant envelope signals carry out power amplification, again synthesize the amplified signal of two-way by power combiner believe all the way afterwards
Number；Signal after the synthesis of this road is still varying envelope signal, does not lose the effective information wherein modulated.Chireix modulation radio frequency work(
Rate amplifier takes full advantage of the higher efficiency of switching amplifier, and will not sacrifice linearity index；Its shortcomings that is,
Signal decomposition part needs additional calculating and power dissipation overhead, and the more difficult design of power combiner of Chireix modulation signal.This
A little problems also result in Chireix modulation radio-frequency power amplifier and are not widely used on portable mobile termianl.
4. the radio-frequency power amplifier based on envelope-tracking
The core concept of envelop following technology is by being provided to radio-frequency power amplifier with instantaneous rf signal envelope
The momentary power voltage of voltage change makes radio-frequency power amplifier that higher work all be kept to imitate under arbitrary instantaneous rf envelope
Rate, and the linearity index of radio-frequency power amplifier will not be sacrificed.
Envelop following technology can make power amplifier keep efficiency operation in wider power bracket, in channel radio
Relatively broad application is obtained on letter base station and portable mobile termianl.As core the most in envelope-tracking system
Part, the bandwidth and speed of envelope tracker need the requirement for meeting the modulated signal application to become increasingly complex.
Well known to professional and technical personnel in the field, when power amplifier works in higher supply voltage, be conducive to carry
The bandwidth of operation of high RF power amplifier, this has important for the more and more extensive 4G/LTE communication standards of current application
Positive effect.Therefore, the envelope tracker with high output voltage and high bandwidth is realized, it is extremely important.
The content of the invention
The present invention seeks to：A kind of high voltage envelope tracker for being used to optimize radio-frequency power amplifier performance is provided, it can
Optimize efficiency of the power amplifier under wider output power range simultaneously to control the power supply envelope of radio-frequency power amplifier
Its bandwidth of operation is improved, the efficiency of entire radio-frequency power amplification system can be improved.
The technical scheme is that：
A kind of high voltage envelope tracker for being used to optimize radio-frequency power amplifier performance, including boost module, decompression mould
Block, linear power supply drive module；
Supply voltage VBAT is changed into one according to single-ended envelope signal VAMP and believed than largest enveloping by the boost module
Number bigger DC voltage, the DC voltage are powered to voltage reduction module and linear power supply drive module；
The voltage reduction module and linear power supply drive module coordinate together powers to radio-frequency power amplifier so as to fulfill one
A distortionless power supply envelope；The linear power supply drive module receive a pair of of difference envelope signal input Venvp and
Venvn。
Further, the boost module includes buck control module and buck power switch transistor, the liter
Decompression control module is realized that the buck power switch transistor is realized by GaAs pHEMT techniques by silicon base CMOS technique.
Further, the voltage reduction module includes decompression control module and buck switching power transistor, the decompression control
Molding block is realized that the buck switching power transistor is realized by GaAs pHEMT techniques by silicon base CMOS technique.
Further, the linear power supply drive module is included in double turns of single amplifiers and prime on silicon base CMOS chip
Driver and GaAs pHEMT transistors.
Further, MIPI digital interface modules are further included, for receiving from external control signal to configure envelope
The operating mode of tracker.
Further, the buck power switch transistor include the first transistor and second transistor, described first
The source electrode ground connection of transistor, drain electrode pass through the first inductance connection supply voltage VBAT, the source electrode of the second transistor and first
The drain electrode connection of transistor, by the first capacity earth, the grid of the first transistor connects for the drain electrode of the second transistor
The first driver is connect, the grid of the second transistor connects the second driver, and second driver passes through boostrap circuit liter
High power supply voltage.
Further, the buck switching power transistor includes third transistor and the 4th transistor, and the described 3rd is brilliant
The source electrode ground connection of body pipe, grid connect the 3rd driver, and the drain electrode of the third transistor is connected with the source electrode of the 4th transistor,
And pass through the second inductance and the second capacity earth, and the output terminal of the drain electrode connection boost module of the 4th transistor, described the
The grid connection fourth drive of four transistors, the fourth drive pass through boostrap circuit boost source voltage.
Further, the GaAs pHEMT transistors include the 5th transistor and the 6th transistor, the 5th crystal
The source electrode ground connection of pipe, grid connection pre-driver, the source electrode of drain electrode the 6th transistor of connection of the 5th transistor, drain electrode
The output terminal of boost module is connected, the grid of the 5th transistor connects the grid of the 7th transistor, the 7th transistor
Source electrode ground connection, the grid of drain electrode the 6th transistor of connection, it is brilliant that the drain electrode of the 7th transistor also passes through resistance connection the 6th
The drain electrode of body pipe, the drain electrode of the 5th transistor are also connected with the output terminal of voltage reduction module.
It is an advantage of the invention that：
1. completing the pre-amplification of controller function and envelope signal and processing with silicon base CMOS technique, CMOS is given full play to
The large-scale integrated ability of technique；GaAs pHEMT transistors with high performance are used simultaneously, utilize its high voltage ability, low
Conducting resistance and large gain bandwidth characteristic efficiently generate one as the switching power tube of dc-dc and linear amplifier
It is a to be higher than input supply voltage and fast-changing power supply envelope, the power supply as radio-frequency power amplifier.
2. the more demanding output load impedance of higher supply voltage, it is hereby achieved that wider bandwidth of operation, it can
To improve the efficiency of entire radio-frequency power amplification system, moreover it is possible to optimize the linearity of radio-frequency power amplifier.
Description of the drawings
The invention will be further described with reference to the accompanying drawings and embodiments：
Fig. 1 is the functional block diagram that envelope tracker of the present invention is connected with two power amplifiers；
Fig. 2 is the physical circuit figure of envelope tracker GaAs pHEMT parts of the present invention；
Fig. 3 is the input and output signal of envelope tracker of the present invention and the output signal of radio-frequency power amplifier
When m- voltage curve；
Fig. 4 is the efficiency curve diagram of the entire radio-frequency power amplification system of the present invention；
Fig. 5 is radio-frequency power amplifier bandwidth of operation graph of the present invention.
Specific embodiment
Understand to make the object, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright scope.In addition, in the following description, the description to known features and technology is omitted, to avoid this is unnecessarily obscured
The concept of invention.
Embodiment 1：
Fig. 1 shows an envelope tracker proposed by the invention.Envelope tracker 101 receives the envelope of a pair of of difference
Signal inputs VenvpAnd Venvn, while receive a single-ended envelope signal V from differential envelope input extractionAMP；By envelope with
The processing of track device obtains supply voltage of one or several output signals as radio-frequency power amplifier.Two are shown in Fig. 1
Power amplifier 102 and 103 is as representing, power amplifier namely for 3G/4G standards and for 2G GSM standards
Power amplifier.The number of radio-frequency power amplifier will not be confined to two in practical applications, often more.Envelope with
Track device 101 mainly includes following main functional modules：
1. boost module 104, major function is according to single-ended envelope signal VAMPBy cell voltage VBATPass through a height
The dc-dc of effect is changed into a DC voltage more bigger than largest enveloping signal.The DC voltage of generation is wrapped with maximum
The difference of network signal is determined by the performance of radio-frequency power amplifier, can be set by the external world.Boost module 104 mainly has two
Divide and form：Buck control module FSM 1 and buck power switch transistor.In the present invention, buck control module by
Silicon base CMOS technique is realized, and buck power switch transistor is realized by GaAs pHEMT techniques.Due to GaAs pHEMT devices
The characteristics such as the high pressure of part, quick and low on-resistance, here buck power switch transistor can reach preferably work band
Wide and work efficiency.
2. voltage reduction module 105, major function is to provide electric current for external radio-frequency power amplifier to support, due to decompression
Module 105 is realized by a DC-DC based on BUCK, for the finite bandwidth of optimization efficiency and its current tracking, it is necessary to
One linear power supply drive module 106 with its coordinate together with to radio-frequency power amplifier power so as to fulfill a distortionless electricity
Source envelope.Voltage reduction module 105 is made of two major parts：It is depressured control module FSM 2 and buck switching power transistor.This
Decompression control module in scheme is realized by silicon base CMOS technique, and buck switching power transistor is real by GaAs pHEMT techniques
It is existing.Due to characteristics such as the high pressure of GaAs pHEMT devices, quick and low on-resistances, buck switching power transistor can be with here
Reach better bandwidth of operation and work efficiency.Controller in voltage reduction module 105 supports fast electric in envelope-tracking pattern
Flat envelope-tracking；It also supports to provide an efficient DC voltage under radio-frequency power amplifier mean power pattern simultaneously, this
Pattern is mean power tracing mode.Under mean power tracing mode, voltage reduction module 105 is operated in a slower work frequency
Under rate supply voltage is provided for radio-frequency power amplifier.In the present solution, the power supply of voltage reduction module 105 is by boost module 104
It generates, its main purpose is in order to which envelope tracker is made to provide one higher than input supply voltage for radio-frequency power amplifier
Operating voltage.
3. linear power supply drive module 106, major function is the height provided for radio-frequency power amplifier in output voltage
Frequency component.Under envelope-tracking pattern, the supply voltage of radio-frequency power amplifier has faster saltus step, such as in order to support LTE
The signal of 100RB, envelope variation frequency can reach tens of MHz.And voltage reduction module 105 can only at most support the electricity of 1MHz or so
Source voltage change, rest part are required to be completed by linear power supply drive module 106, this requires linear power supply drive module 106
The bandwidth of nearly hundred MHz is supported to meet the variation of the high speed of power supply.This programme using the power transistor of GaAs pHEMT techniques come
The Linear actuator of supply voltage is completed, the envelope conversion of early period is completed with silicon base CMOS technique and amplifies to support based on closed loop
Linear Driving.In the present solution, the power supply of linear power supply drive module 106 is generated by boost module 104, main mesh
Be in order to make envelope tracker for radio-frequency power amplifier provide one be higher than input supply voltage operating voltage.
4. the biasing circuit of power amplifier and on piece LDO 108, major function is to provide radio-frequency power amplifier
Bias current and the bias current and voltage for envelope tracker.Biasing circuit and on piece LDO 108 can be radio-frequency power
Amplifier provides temperature change compensation and technique angle compensation, promotes the stability of radio-frequency power amplifier.
5.MIPI digital interface modules 109, major function be receive from external control signal come configure envelope with
The operating mode of track device.
6. the switching switch 107 during for being converted between different mode, the major function of these switches is to complete different moulds
It the addition of required capacitance and is put out under formula.
This programme proposition completes the pre-amplification of controller function and envelope signal and processing with silicon base CMOS technique, fully
Play the large-scale integrated ability of CMOS technology；GaAs pHEMT transistors with high performance are used simultaneously, it is resistance to using its height
Pressure energy power, low on-resistance and large gain bandwidth characteristic come high as the switching power tube of dc-dc and linear amplifier
Effect ground generates one higher than input supply voltage and fast-changing power supply envelope, the power supply electricity as radio-frequency power amplifier
Source.
Fig. 2 gives the physical circuit realization figure of the GaAs pHEMT parts of this programme.GaAs pHEMT transistors 301
It is the power switch transistor of boost DC-DC with 302, it is relatively low by one to complete that effect is to provide efficient switch motion
Input supply voltage VBATIt is converted into a higher output voltage VBOOST.303 He of driver based on GaAs pHEMT techniques
304 are used for driving switch power transistor 301 and 302.Inductance 308 is the energy-storage travelling wave tube in boost DC-DC, due to requiring this
Inductance has high Q values and its inductance value larger, and this programme uses the realization method of chip inductor outside piece.Capacitance 307 is used for
It stores the charge of the high pressure generated and realizes filter function.Since GaAs pHEMT only have N-type device, if only with power supply electricity
Transistor 302 can generate larger pressure drop on signal path if pressure, so as to reduce the efficiency of boost converter.In order to reduce
The reduction of this efficiency, this programme employ the boostrap circuit based on GaAs pHEMT to raise the supply voltage of driver 303,
It is made of diode 305 and capacitance 306.When 301 turn on and 302 end, capacitance 306 charges to supply voltage VBAT and cuts one
A diode threshold voltage, when 301 cut-offs during 302 conducting, the electric current of inductance 308 can make the drain electrode of power tube 301,302
Source voltage raises, and the supply voltage of driver 303 is raised by capacitance 306；Diode 305 is reverse-biased at this time, blocks driver
Access between 303 supply voltage and cell voltage VBAT.In order to coordinate completion boost function, this programme is in silicon base CMOS core
On piece realizes controller 323 and corresponding driver 321 and 322 to drive the driver on GaAs pHEMT chips.
Identical with boost module, GaAs pHEMT transistors 309 and 310 are the power switch transistors of buck DC-DC,
Effect is to provide efficient switch motion to complete the high voltage V for generating boost moduleBOOSTIt is converted into a relatively low output
Voltage.Driver 311 and 312 is used for driving switch power transistor 310 and 309.Inductance 316 is the energy storage in buck DC-DC
Element, since this inductance being required to have, high Q values and its inductance value are larger, and this programme uses the realization of the outer chip inductor of piece
Mode.Capacitance 315 is used to store the charge of the low pressure generated and realizes filter function.
Since GaAs pHEMT only have N-type device, transistor 310 can be on signal path if only using supply voltage
Larger pressure drop is generated, so as to lower the efficiency of buck converter.In order to reduce the reduction of this efficiency, this programme employs base
The supply voltage of driver 311 is raised in the boostrap circuit of GaAs pHEMT, is made of diode 313 and capacitance 314.When
309 conducting and 310 cut-off when, capacitance 314 charges to supply voltage VBAT and cuts a diode threshold voltage, when 309 cut-off
And during 310 conducting, the electric current of inductance 316 can make the drain electrode of power tube 309, the rise of 310 source voltage, be pushed away by capacitance 314
The supply voltage of high driver 311；Diode 313 is reverse-biased at this time, blocks the supply voltage of driver 311 and cell voltage VBAT
Between access.In order to coordinate completion buck functionality, this programme realizes controller 326 and corresponding on silicon base CMOS chip
Driver 324 and 325 drives the driver on GaAs pHEMT chips.
In order to support quick envelope-tracking, this programme employs the linear power supply drive module of a hybrid integrated, work(
Rate driving stage is made of GaAs pHEMT transistors 317 and 318, and the amplifier of prime is by GaAs pHEMT transistors 319 and piece
Upper resistance 320 is formed.There are double turns of single amplifiers 328 and pre-driver 327 to complete to inputting envelope on silicon base CMOS chip
The processing and amplification of signal.
Fig. 3 shows the input and output signal of envelope tracker and the output signal of radio-frequency power amplifier.Curve
401 and 402 be the Differential Input of envelope tracker, and curve 403 is the output of envelope tracker as radio-frequency power amplifier
Supply voltage.The output envelope 403 of envelope tracker is the signal after the input amplification of envelope signal 401,402；Curve 404 is
The output envelope 403 of the output signal of radio-frequency power amplifier, envelope 405 and envelope tracker is similar.
The purpose of this programme is in order to improve the efficiency of entire radio-frequency power amplification system, as shown in Figure 4.502 generation of curve
Table efficiency of the radio-frequency power amplifier under stabilized power source voltage condition；Curve 501 is represented using envelope tracker to penetrating
The overall efficiency of entire radio-frequency power amplification system, peak efficiencies are less than stabilized power source voltage after the power supply of frequency power amplifier
Under radio-frequency power amplifier peak efficiencies, however greatly improved in other low output powers power amplifier effect
Rate.Meanwhile in Setting signal envelope, envelope tracker can also optimize the linearity of radio-frequency power amplifier.From another
A angle sees that system can be combined together the envelope modulation of static predistortion and power amplifier.
In the case where output power is identical, the more demanding output load impedance of higher supply voltage, so as to
Wider bandwidth of operation is obtained, as shown in Figure 5.Curve 602 represents radio-frequency power amplifier at lower supply voltages
Bandwidth of operation；Curve 601 represents bandwidth of operation of the radio-frequency power amplifier under higher supply voltage.It is proposed by the invention
Envelope tracker have boost function, the supply voltage higher than cell voltage can be provided for radio-frequency power amplifier, thus
Help to improve the bandwidth of operation of radio-frequency power amplifier.
It should be appreciated that the above-mentioned specific embodiment of the present invention is used only for exemplary illustration or explains the present invention's
Principle, without being construed as limiting the invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into scope and border or this scope and the equivalents on border and repairing
Change example.
Claims (5)
1. a kind of high voltage envelope tracker for being used to optimize radio-frequency power amplifier performance, which is characterized in that including the mould that boosts
Block, voltage reduction module, linear power supply drive module；
The boost module, according to single-ended envelope signal VAMPBy supply voltage VBATIt is changed into one bigger than largest enveloping signal
DC voltage, the DC voltage are powered to voltage reduction module and linear power supply drive module；The voltage reduction module, for that will boost
The voltage conversion that module generates generates the output voltage of voltage into one less than boost module；
The voltage reduction module and linear power supply drive module coordinate together powers to radio-frequency power amplifier, and realization one is undistorted
Power supply envelope；The linear power supply drive module is included in double turns of single amplifiers and pre-driver on silicon base CMOS chip
With GaAs pHEMT transistors, the linear power supply drive module receives the envelope signal input V of a pair of of differenceenvpAnd Venvn；Institute
Stating boost module includes buck control module and buck power switch transistor, and the buck control module is by silicon substrate
CMOS technology realizes that the buck power switch transistor is realized by GaAs pHEMT techniques；The voltage reduction module includes drop
Control module and buck switching power transistor are pressed, the decompression control module is realized that the decompression is opened by silicon base CMOS technique
Power transistor is closed to be realized by GaAs pHEMT techniques.
2. the high voltage envelope tracker according to claim 1 for being used to optimize radio-frequency power amplifier performance, feature
It is, further includes MIPI digital interface modules, for receives from external control signal to configure the work of envelope tracker
Pattern.
3. the high voltage envelope tracker according to claim 1 for being used to optimize radio-frequency power amplifier performance, feature
It is, the buck power switch transistor includes the first transistor and second transistor, the source electrode of the first transistor
Ground connection, drain electrode pass through the first inductance connection supply voltage VBAT, the drain electrode of the source electrode of the second transistor and the first transistor connects
It connects, by the first capacity earth, the grid of the first transistor connects the first driver, institute for the drain electrode of the second transistor
The grid for stating second transistor connects the second driver, and second driver passes through boostrap circuit boost source voltage.
4. the high voltage envelope tracker according to claim 1 for being used to optimize radio-frequency power amplifier performance, feature
It is, the buck switching power transistor includes third transistor and the 4th transistor, and the source electrode of the third transistor connects
Ground, grid connect the 3rd driver, and the drain electrode of the third transistor is connected with the source electrode of the 4th transistor, and pass through the second electricity
Sense and the second capacity earth, the output terminal of the drain electrode connection boost module of the 4th transistor, the grid of the 4th transistor
Pole connects fourth drive, and the fourth drive passes through boostrap circuit boost source voltage.
5. the high voltage envelope tracker according to claim 1 for being used to optimize radio-frequency power amplifier performance, feature
It is, the GaAs pHEMT transistors include the 5th transistor and the 6th transistor, and the source electrode of the 5th transistor is grounded,
Grid connects pre-driver, the source electrode of drain electrode the 6th transistor of connection of the 5th transistor, drain electrode connection boost module
Output terminal, the grid of the 5th transistor connects the grid of the 7th transistor, the source electrode ground connection of the 7th transistor, leakage
Pole connects the grid of the 6th transistor, and the drain electrode of the 7th transistor also connects the drain electrode of the 6th transistor, institute by resistance
The drain electrode for stating the 5th transistor is also connected with the output terminal of voltage reduction module.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3687065A1 (en) * | 2019-01-25 | 2020-07-29 | Mediatek Inc. | Envelope tracking modulator |
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| CN105871209B (en) * | 2016-03-29 | 2019-01-25 | 宜确半导体（苏州）有限公司 | A kind of positive-feedback circuit, DC-DC electric pressure converter and envelope tracker |
| CN108809260B (en) * | 2018-04-24 | 2022-06-07 | 陕西亚成微电子股份有限公司 | Control method for power supply of radio frequency power amplifier |
| CN109245730B (en) * | 2018-08-21 | 2022-08-02 | 中国科学院微电子研究所 | Switching power amplifier and digital transmitter |
| CN114514488A (en) * | 2019-09-30 | 2022-05-17 | 华为技术有限公司 | Envelope tracking modulator and transmitting device |
| CN110719073B (en) * | 2019-10-09 | 2024-02-23 | 广州粒子微电子有限公司 | Hybrid envelope modulation method and circuit applied to radio frequency power amplifier |
| US11271599B2 (en) * | 2019-12-19 | 2022-03-08 | Qualcomm Incorporated | Envelope tracking system having fast transition time for a radio frequency (RF) amplifier |
| CN112671352B (en) * | 2020-11-26 | 2024-05-24 | 钢研纳克检测技术股份有限公司 | Ion funnel radio frequency driving power supply of portable mass spectrometer |
| CN114696758B (en) * | 2020-12-31 | 2024-10-18 | 圣邦微电子（北京）股份有限公司 | Envelope synthesis power supply and radio frequency power module with same |
| CN116526606A (en) * | 2023-04-10 | 2023-08-01 | 唯捷创芯(天津)电子技术股份有限公司 | Power supply system, electronic equipment and power supply method of power amplifier module |
| CN118174667B (en) * | 2024-05-13 | 2024-07-30 | 浙江大学 | A radio frequency power amplifier and a wireless transmission system for a terminal |
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