CN104777650B - Tft array substrate, its production method, liquid crystal display panel and display device - Google Patents
Tft array substrate, its production method, liquid crystal display panel and display device Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 116
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims description 25
- 238000002161 passivation Methods 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 14
- 238000004220 aggregation Methods 0.000 abstract description 4
- 230000002776 aggregation Effects 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 4
- 230000009467 reduction Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 26
- 230000008569 process Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 230000007547 defect Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241001270131 Agaricus moelleri Species 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
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- G—PHYSICS
- G02—OPTICS
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Abstract
本发明公开了一种TFT阵列基板、其制作方法、液晶显示面板及显示装置,包括:衬底基板,设置在衬底基板上位于两个PAD区域之间呈三角状的公共电极金属层,以及设置在公共电极金属层上的绝缘层,PAD区域为TFT阵列基板上的显示区域外围的布线区域;其中,绝缘层的表面具有至少一个第一凹槽。由于在绝缘层上设置了至少一个第一凹槽,可以用来减弱配向膜溶液向公共电极金属层所在区域聚集并向外扩散,解决了显示区域的配向膜溶液减少且溶液分布不均匀,形成的配向膜厚度偏薄且均匀性较差,产生云纹不良的问题,达到了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,进而提高显示面板的品质。
The invention discloses a TFT array substrate, a manufacturing method thereof, a liquid crystal display panel and a display device, comprising: a base substrate, a triangular common electrode metal layer disposed on the base substrate between two PAD regions, and The insulating layer arranged on the metal layer of the common electrode, the PAD area is the wiring area around the display area on the TFT array substrate; wherein, the surface of the insulating layer has at least one first groove. Since at least one first groove is provided on the insulating layer, it can be used to weaken the aggregation of the alignment film solution to the area where the common electrode metal layer is located and to diffuse outward, which solves the problem of the reduction of the alignment film solution in the display area and the uneven distribution of the solution. The thickness of the alignment film is thin and the uniformity is poor, resulting in the problem of poor moiré, so that the alignment film solution in the display area can be evenly distributed, avoiding poor moiré, and thereby improving the quality of the display panel.
Description
技术领域technical field
本发明涉及显示技术领域,尤指一种TFT阵列基板、其制作方法、液晶显示面板及显示装置。The invention relates to the field of display technology, in particular to a TFT array substrate, a manufacturing method thereof, a liquid crystal display panel and a display device.
背景技术Background technique
目前液晶显示面板(Liquid Crystal Display,LCD)通过控制液晶分子的旋转方向和旋转角度来控制穿透液晶层的光亮,从而显示各种灰度的图像,其具有高画面质量、体积小、重量轻等优点,广泛应用于移动电话、笔记本电脑、电视机以及显示器等产品中。通常情况下,为了使大部分液晶分子的长轴方向有规律的排列,LCD中的薄膜晶体管(Thin FilmTransistor,TFT)阵列基板上形成有配向膜。At present, the liquid crystal display panel (Liquid Crystal Display, LCD) controls the light penetrating the liquid crystal layer by controlling the rotation direction and rotation angle of the liquid crystal molecules, thereby displaying images of various grayscales, which has high picture quality, small size, and light weight. And other advantages, widely used in mobile phones, notebook computers, televisions and monitors and other products. Usually, in order to arrange the major axes of most liquid crystal molecules regularly, an alignment film is formed on a thin film transistor (Thin Film Transistor, TFT) array substrate in an LCD.
现有的TFT阵列基板,如图1a所示,衬底基板001上设置有显示区域(AA区)和多个(图1a中以2个为例)布线区域(PAD区),每两个PAD区之间的区域为呈三角状的公共电极金属层002所在区域,其中,公共电极金属层所在区域的高度通常小于或等于显示区域的高度;图1b为图1a中公共电极金属层所在区域沿A-A’方向的剖面结构示意图,包括:衬底基板001,依次设置在衬底基板001上的公共电极金属层002和绝缘层003。在进行配向膜涂覆的过程中通常选用喷墨印刷方式,喷墨印刷方式涂覆后,配向膜溶液扩散时,由于常规设计的公共电极金属层所在区域呈三角状且整体表面是平坦的,配向膜溶液很容易由两端向两个PAD交界缝隙处即三角公共电极金属所在区域聚集并向外扩散,导致显示区域的配向膜溶液减少且分布不均匀,进而导致高温固化时配向膜偏薄且均匀性较差,易发生云纹不良。The existing TFT array substrate, as shown in Figure 1a, is provided with a display area (AA area) and a plurality of (taking 2 as an example in Figure 1a) wiring areas (PAD areas) on the base substrate 001, every two PADs The area between the regions is the area where the triangular common electrode metal layer 002 is located, wherein the height of the area where the common electrode metal layer is located is usually less than or equal to the height of the display area; Figure 1b shows the area where the common electrode metal layer is located along the The schematic cross-sectional structure in the AA' direction includes: a base substrate 001 , a common electrode metal layer 002 and an insulating layer 003 sequentially disposed on the base substrate 001 . In the process of coating the alignment film, the inkjet printing method is usually used. After the inkjet printing method is applied, when the alignment film solution diffuses, the area where the metal layer of the common electrode is conventionally designed is triangular and the overall surface is flat. The alignment film solution is easy to gather and diffuse outward from the two ends to the gap between the two PADs, that is, the area where the triangular common electrode metal is located, resulting in a decrease in the alignment film solution in the display area and uneven distribution, which in turn leads to a thinner alignment film during high temperature curing. And the uniformity is poor, prone to poor moiré.
因此,如何实现显示区域的配向膜厚度较均匀,改善云纹不良,是本领域技术人员亟需解决的技术问题。Therefore, how to achieve a more uniform thickness of the alignment film in the display area and improve moiré defect is a technical problem urgently needed to be solved by those skilled in the art.
发明内容Contents of the invention
有鉴于此,本发明实施例提供一种TFT阵列基板、其制作方法、液晶显示面板及显示装置,可以使显示区域的配向膜溶液能够均匀分布,避免云纹不良,进而提高显示面板的品质。In view of this, the embodiments of the present invention provide a TFT array substrate, a manufacturing method thereof, a liquid crystal display panel, and a display device, which can uniformly distribute the alignment film solution in the display area, avoid moiré defects, and further improve the quality of the display panel.
因此,本发明实施例提供了一种TFT阵列基板,包括:衬底基板,设置在所述衬底基板上位于两个PAD区域之间呈三角状的公共电极金属层,以及设置在所述公共电极金属层上的绝缘层,所述PAD区域为所述TFT阵列基板上的显示区域外围的布线区域;其中,Therefore, an embodiment of the present invention provides a TFT array substrate, including: a base substrate, a triangular common electrode metal layer disposed on the base substrate between two PAD regions, and a triangular common electrode metal layer disposed on the common electrode The insulating layer on the electrode metal layer, the PAD area is the wiring area around the display area on the TFT array substrate; wherein,
所述绝缘层的表面具有至少一个第一凹槽。The surface of the insulating layer has at least one first groove.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,还包括:设置在所述绝缘层上且与所述绝缘层直接接触的透明导电层;所述透明导电层具有与所述绝缘层的第一凹槽相匹配的第二凹槽,且所述透明导电层通过所述第一凹槽与所述公共电极金属层电性相连。In a possible implementation manner, the above-mentioned TFT array substrate provided by the embodiment of the present invention further includes: a transparent conductive layer disposed on the insulating layer and in direct contact with the insulating layer; the transparent conductive layer There is a second groove matching the first groove of the insulating layer, and the transparent conductive layer is electrically connected to the common electrode metal layer through the first groove.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,所述公共电极金属层的至少一部分的表面上具有与所述绝缘层的第一凹槽位置对应的第三凹槽。In a possible implementation manner, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, at least a part of the surface of the common electrode metal layer has a third groove corresponding to the position of the first groove of the insulating layer. groove.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,所述公共电极金属层与所述TFT阵列基板的栅极同层设置;In a possible implementation manner, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, the common electrode metal layer is arranged on the same layer as the gate of the TFT array substrate;
所述绝缘层包括在所述衬底基板上层叠设置的栅绝缘层和钝化层,至少一个所述第一凹槽位于所述栅绝缘层和钝化层之间。The insulating layer includes a gate insulating layer and a passivation layer stacked on the substrate, and at least one of the first grooves is located between the gate insulating layer and the passivation layer.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,还包括:在所述衬底基板和所述公共电极金属层之间设置有第二电极金属层。In a possible implementation manner, the above-mentioned TFT array substrate provided by the embodiment of the present invention further includes: a second electrode metal layer is disposed between the base substrate and the common electrode metal layer.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,所述公共电极金属层与所述TFT阵列基板的源漏极同层设置;In a possible implementation manner, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, the common electrode metal layer is arranged on the same layer as the source and drain electrodes of the TFT array substrate;
所述绝缘层为钝化层,所述钝化层具有至少一个所述第一凹槽。The insulating layer is a passivation layer, and the passivation layer has at least one first groove.
在一种可能的实现方式中,在本发明实施例提供的上述TFT阵列基板中,所述第一凹槽、所述第二凹槽和所述第三凹槽的开口形状为条状或孔状。In a possible implementation manner, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, the opening shapes of the first groove, the second groove and the third groove are strips or holes shape.
本发明实施例还提供了一种本发明实施例提供的上述TFT阵列基板的制作方法,包括:The embodiment of the present invention also provides a method for manufacturing the above-mentioned TFT array substrate provided by the embodiment of the present invention, including:
在衬底基板上形成公共电极金属层的图形;forming the pattern of the common electrode metal layer on the base substrate;
在所述公共电极金属层上形成具有至少一个第一凹槽的绝缘层的图形。A pattern of an insulating layer having at least one first groove is formed on the common electrode metal layer.
在一种可能的实现方式中,本发明实施例提供的上述TFT阵列基板的制作方法,在所述形成具有至少一个第一凹槽的绝缘层的图形之后,包括:In a possible implementation manner, the method for manufacturing the above-mentioned TFT array substrate provided by the embodiment of the present invention, after forming the pattern of the insulating layer having at least one first groove, includes:
在所述绝缘层上形成具有第二凹槽的透明导电层的图形,且所述透明导电层通过所述第一凹槽与所述公共电极金属层电性相连。A pattern of a transparent conductive layer having a second groove is formed on the insulating layer, and the transparent conductive layer is electrically connected to the common electrode metal layer through the first groove.
本发明实施例还提供了一种液晶显示面板,包括相对设置的对向基板和TFT阵列基板,以及位于所述对向基板和TFT阵列基板之间的液晶层;其中,An embodiment of the present invention also provides a liquid crystal display panel, including an opposite substrate and a TFT array substrate, and a liquid crystal layer located between the opposite substrate and the TFT array substrate; wherein,
所述TFT阵列基板为本发明实施例提供的上述TFT阵列基板。The TFT array substrate is the above-mentioned TFT array substrate provided by the embodiment of the present invention.
本发明实施例还提供了一种显示装置,包括本发明实施例提供的上述液晶显示面板。An embodiment of the present invention also provides a display device, including the above-mentioned liquid crystal display panel provided by the embodiment of the present invention.
本发明实施例的有益效果包括:The beneficial effects of the embodiments of the present invention include:
本发明实施例提供的一种TFT阵列基板、其制作方法、液晶显示面板及显示装置,包括:衬底基板,设置在衬底基板上位于两个PAD区域之间呈三角状的公共电极金属层,以及设置在公共电极金属层上的绝缘层,PAD区域为TFT阵列基板上的显示区域外围的布线区域;其中,绝缘层的表面具有至少一个第一凹槽。由于在绝缘层上设置了至少一个第一凹槽,可以用来减弱配向膜溶液向公共电极金属层所在区域聚集并向外扩散,解决了显示区域的配向膜溶液减少且溶液分布不均匀,形成的配向膜厚度偏薄且均匀性较差,产生云纹不良的问题,达到了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,进而提高显示面板的品质。A TFT array substrate, a manufacturing method thereof, a liquid crystal display panel, and a display device provided by an embodiment of the present invention include: a base substrate, a triangular common electrode metal layer disposed on the base substrate between two PAD regions , and an insulating layer disposed on the common electrode metal layer, the PAD area is a wiring area on the periphery of the display area on the TFT array substrate; wherein, the surface of the insulating layer has at least one first groove. Since at least one first groove is provided on the insulating layer, it can be used to weaken the aggregation of the alignment film solution to the area where the common electrode metal layer is located and to diffuse outward, which solves the problem of the reduction of the alignment film solution in the display area and the uneven distribution of the solution. The thickness of the alignment film is relatively thin and the uniformity is poor, resulting in the problem of poor moiré, so that the alignment film solution in the display area can be evenly distributed, avoiding poor moiré, and thereby improving the quality of the display panel.
附图说明Description of drawings
图1a为现有技术中TFT阵列基板的俯视图;Figure 1a is a top view of a TFT array substrate in the prior art;
图1b为图1a中公共电极金属层所在区域沿A-A’方向的剖面结构示意图;Fig. 1b is a schematic cross-sectional structure diagram along the A-A' direction of the region where the common electrode metal layer is located in Fig. 1a;
图2a至图2f分别为本发明实施例提供的TFT阵列基板的结构示意图;2a to 2f are schematic structural diagrams of TFT array substrates provided by embodiments of the present invention;
图3a至图3c分别为本发明实施例提供的TFT阵列基板中公共电极金属层所在区域的俯视图;3a to 3c are top views of the region where the common electrode metal layer is located in the TFT array substrate provided by the embodiment of the present invention;
图4至图7分别为本发明实施例提供的TFT阵列基板的制作方法流程图。4 to 7 are flow charts of the manufacturing method of the TFT array substrate provided by the embodiment of the present invention, respectively.
具体实施方式Detailed ways
下面结合附图,对本发明实施例提供的TFT阵列基板、其制作方法及显示装置的具体实施方式进行详细地说明。The specific implementation manners of the TFT array substrate provided by the embodiments of the present invention, its manufacturing method and the display device will be described in detail below with reference to the accompanying drawings.
其中,附图中各膜层的厚度和形状不反映TFT阵列基板的真实比例,目的只是示意说明本发明内容。Wherein, the thickness and shape of each film layer in the drawings do not reflect the real proportion of the TFT array substrate, and the purpose is only to illustrate the content of the present invention.
本发明实施例提供了一种TFT阵列基板,如图2a所示,包括:衬底基板100,设置在衬底基板100上位于两个PAD区域之间呈三角状的公共电极金属层200,以及设置在公共电极金属层200上的绝缘层300,这里所指的PAD区域为TFT阵列基板上的显示区域外围的布线区域;其中,An embodiment of the present invention provides a TFT array substrate, as shown in FIG. 2a, including: a base substrate 100, a triangular common electrode metal layer 200 disposed on the base substrate 100 between two PAD regions, and The insulating layer 300 disposed on the common electrode metal layer 200, the PAD area referred to here is the wiring area on the periphery of the display area on the TFT array substrate; wherein,
该绝缘层300的表面具有至少一个第一凹槽A。The insulating layer 300 has at least one first groove A on its surface.
在本发明实施例提供的上述TFT阵列基板,由于在公共电极金属层上方的绝缘层上设置了至少一个第一凹槽A(在构图工艺中,可以将第一凹槽A对应位置的绝缘层完全刻蚀掉或部分刻蚀掉,即第一凹槽A的深度小于或等于绝缘层的厚度),可以用来减弱配向膜溶液向公共电极金属层所在区域聚集并向外扩散,解决了显示区域的配向膜溶液减少且溶液分布不均匀,形成的配向膜厚度偏薄且均匀性较差,产生云纹不良的问题,达到了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,进而提高显示面板的品质。In the above-mentioned TFT array substrate provided by the embodiment of the present invention, since at least one first groove A is provided on the insulating layer above the common electrode metal layer (in the patterning process, the insulating layer at the corresponding position of the first groove A can be completely etched or partially etched, that is, the depth of the first groove A is less than or equal to the thickness of the insulating layer), which can be used to weaken the aggregation of the alignment film solution to the area where the common electrode metal layer is located and to diffuse outward, solving the problem of display The alignment film solution in the area is reduced and the solution is unevenly distributed, and the thickness of the formed alignment film is relatively thin and the uniformity is poor, resulting in the problem of poor moiré, so that the alignment film solution in the display area can be evenly distributed to avoid poor moiré. Further, the quality of the display panel is improved.
在具体实施时,在本发明实施例提供的上述TFT阵列基板中,为了能够减小公共电极金属层200的电阻,如图2b所示,该阵列基板还可以包括:设置在绝缘层300上且与绝缘层300直接接触的透明导电层400;该透明导电层400通过第一凹槽A与公共电极金属层200电性相连(此时,在构图工艺中,第一凹槽A对应位置的绝缘层300必须完全刻蚀掉,即第一凹槽A的深度等于绝缘层300的厚度),这样由于透明导电层400通过第一凹槽A(相当于过孔)与公共电极金属层200电性相连,可以最大限度的降低公共电极金属层200的电阻,提高公共电极金属层200传递电信号时的信噪比,并且,该透明导电层400应具有与绝缘层300的第一凹槽A相匹配的第二凹槽B,需要说明的是,与第一凹槽A相匹配的第二凹槽B,具体是指透明导电层400直接填充第一凹槽A,但不填满,使得透明导电层400具有第二凹槽B。由于透明导电层400的表面具有第二凹槽B,同时也可以有效解决配向膜溶液扩散不均匀的问题,避免出现云纹不良。In specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, in order to reduce the resistance of the common electrode metal layer 200, as shown in FIG. 2b, the array substrate may further include: The transparent conductive layer 400 in direct contact with the insulating layer 300; the transparent conductive layer 400 is electrically connected to the common electrode metal layer 200 through the first groove A (at this time, in the patterning process, the insulation at the corresponding position of the first groove A Layer 300 must be completely etched away, that is, the depth of the first groove A is equal to the thickness of the insulating layer 300), so that the transparent conductive layer 400 is electrically connected to the common electrode metal layer 200 through the first groove A (equivalent to a via hole). connected, the resistance of the common electrode metal layer 200 can be reduced to the greatest extent, and the signal-to-noise ratio when the common electrode metal layer 200 transmits electrical signals can be improved. Moreover, the transparent conductive layer 400 should have the same shape as the first groove A of the insulating layer 300 The matched second groove B, it should be noted that the second groove B matched with the first groove A specifically means that the transparent conductive layer 400 directly fills the first groove A, but does not fill it, so that it is transparent The conductive layer 400 has a second groove B. As shown in FIG. Since the surface of the transparent conductive layer 400 has the second groove B, it can also effectively solve the problem of uneven diffusion of the alignment film solution and avoid moiré defects.
在具体实施时,在本发明实施例提供的上述TFT阵列基板中,为了提高透明导电层400与公共电极金属层200的接触能力,如图2c所示,该公共电极金属层200的至少一部分的表面上可以具有与绝缘层300的第一凹槽A位置对应的第三凹槽C(此时,在构图工艺中,公共电极金属层的顶层可以部分刻蚀掉,即第一凹槽和第三凹槽的总深度小于绝缘层和公共电极金属层的总厚度)。需要说明的是,第一凹槽A与第三凹槽C位置对应,具体制作工艺指的是可以通过同一构图工艺,经过曝光、刻蚀,同时形成第一凹槽A和第三凹槽C的图形。In specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, in order to improve the contact ability between the transparent conductive layer 400 and the common electrode metal layer 200, as shown in FIG. 2c, at least a part of the common electrode metal layer 200 There may be a third groove C corresponding to the position of the first groove A of the insulating layer 300 on the surface (at this time, in the patterning process, the top layer of the common electrode metal layer may be partially etched, that is, the first groove and the second groove The total depth of the three grooves is less than the total thickness of the insulating layer and the common electrode metal layer). It should be noted that the position of the first groove A corresponds to the position of the third groove C, and the specific manufacturing process means that the first groove A and the third groove C can be formed simultaneously through exposure and etching through the same patterning process graphics.
在具体实施时,在本发明实施例提供的上述TFT阵列基板中,如图2d所示,当公共电极金属层200与TFT阵列基板的栅极同层设置时,即公共电极金属层200的材料为栅极金属材料时,绝缘层300可以包括在衬底基板100上层叠设置的栅绝缘层301和钝化层302,为了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,并且可以增加上下断差,至少一个第一凹槽A可以位于栅绝缘层301和钝化层302之间,即栅绝缘层301和钝化层302共具有至少一个第一凹槽A,具体在制作工艺中可以把栅绝缘层301和钝化层302作为一整体膜层,通过构图工艺,在这一整体膜层上形成第一凹槽A的图形。In specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, as shown in FIG. When it is a gate metal material, the insulating layer 300 can include a gate insulating layer 301 and a passivation layer 302 stacked on the base substrate 100, in order to make the alignment film solution in the display area evenly distributed, avoid moiré defects, and can Increase the upper and lower gaps, at least one first groove A can be located between the gate insulating layer 301 and the passivation layer 302, that is, the gate insulating layer 301 and the passivation layer 302 have at least one first groove A, specifically in the manufacturing process The gate insulating layer 301 and the passivation layer 302 can be used as an integral film layer, and the pattern of the first groove A is formed on this integral film layer through a patterning process.
进一步地,在具体实施时,在本发明实施例提供的上述TFT阵列基板中,当公共电极金属层200与TFT阵列基板的栅极同层设置时,为了进一步减小公共电极金属层200的电阻,如图2e所示,该阵列基板还可以包括:在衬底基板100和公共电极金属层200之间设置有第二电极金属层500。此时TFT基板可以为高级超维转换(ADvanced Super DimensionSwitch,ADS)面板或平面转换(In-Plane Switching,IPS)面板中的TFT基板。Further, in specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, when the common electrode metal layer 200 is arranged on the same layer as the gate of the TFT array substrate, in order to further reduce the resistance of the common electrode metal layer 200 , as shown in FIG. 2 e , the array substrate may further include: a second electrode metal layer 500 is disposed between the base substrate 100 and the common electrode metal layer 200 . In this case, the TFT substrate may be a TFT substrate in an Advanced Super Dimension Switch (ADS) panel or an In-Plane Switching (IPS) panel.
在具体实施时,在本发明实施例提供的上述TFT阵列基板中,如图2f所示,当公共电极金属层200与TFT阵列基板的源漏极同层设置时,即公共电极金属层200的材料为源漏极金属材料时,绝缘层300可以为钝化层302,此时为了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,钝化层302具有至少一个第一凹槽A。另外,在衬底基板100和公共电极金属层200之间可以设置有栅绝缘层301。In specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, as shown in FIG. When the material is a source-drain metal material, the insulating layer 300 can be a passivation layer 302. At this time, in order to make the alignment film solution in the display area evenly distributed and avoid poor moiré, the passivation layer 302 has at least one first groove A . In addition, a gate insulating layer 301 may be disposed between the base substrate 100 and the common electrode metal layer 200 .
在具体实施时,在本发明实施例提供的上述TFT阵列基板中,第一凹槽A、第二凹槽B和第三凹槽C的开口形状可以设置为条状或孔状。其中条状可以为长条状、条纹状或其它条状,孔状可以为圆孔状、椭圆孔状或其它孔状。多个开口为长条形的第一凹槽A、第二凹槽B或第三凹槽C可以按照图3a所示的方式阵列排布,也可以按照图3b所示的方式交错排布;多个开口为圆孔状的第一凹槽A、第二凹槽B或第三凹槽C可以按照图3c所示的方式阵列排布。In a specific implementation, in the above-mentioned TFT array substrate provided by the embodiment of the present invention, the opening shapes of the first groove A, the second groove B and the third groove C may be configured as strips or holes. The strip shape can be strip shape, strip shape or other strip shape, and the hole shape can be round hole shape, oval hole shape or other hole shape. A plurality of first grooves A, second grooves B or third grooves C with elongated openings can be arranged in an array as shown in Figure 3a, or arranged in a staggered manner as shown in Figure 3b; A plurality of first grooves A, second grooves B or third grooves C whose openings are circular holes may be arranged in an array as shown in FIG. 3c.
需要说明的是,第一凹槽A、第二凹槽B和第三凹槽C的开口形状、个数,以及排布方式,通常根据实际需要进行设置,在此不作限定。It should be noted that the opening shape, number and arrangement of the first groove A, the second groove B and the third groove C are generally set according to actual needs, and are not limited here.
在具体实施时,本发明实施例提供的TFT阵列基板中一般还会在衬底基板上还一般形成有薄膜晶体管、栅线、数据线等结构,这些具体结构可以有多种实现方式,在此不作限定。During specific implementation, in the TFT array substrate provided by the embodiment of the present invention, structures such as thin film transistors, gate lines, and data lines are generally formed on the base substrate, and these specific structures can be implemented in various ways, here Not limited.
基于同一发明构思,本发明实施例还提供了一种本发明实施例提供的上述TFT阵列基板的制作方法,由于该方法解决问题的原理与前述一种TFT阵列基板相似,因此该方法的实施可以参见TFT阵列基板的实施,重复之处不再赘述。Based on the same inventive concept, the embodiment of the present invention also provides a method for manufacturing the above-mentioned TFT array substrate provided by the embodiment of the present invention. Since the principle of solving the problem of this method is similar to that of the aforementioned TFT array substrate, the implementation of this method can be Refer to the implementation of the TFT array substrate, and repeated descriptions will not be repeated.
在具体实施时,本发明实施例提供的TFT阵列基板的制作方法,如图4所示,具体包括以下步骤:During specific implementation, the manufacturing method of the TFT array substrate provided by the embodiment of the present invention, as shown in FIG. 4 , specifically includes the following steps:
S401、在衬底基板上形成公共电极金属层的图形;S401, forming a pattern of the common electrode metal layer on the base substrate;
S402、在公共电极金属层上形成具有至少一个第一凹槽的绝缘层的图形。S402, forming a pattern of an insulating layer having at least one first groove on the common electrode metal layer.
进一步地,在具体实施时,在本发明实施例提供的上述TFT阵列基板的制作方法中,如图5所示,步骤S402在形成具有至少一个第一凹槽的绝缘层的图形之后,可以包括:Further, in specific implementation, in the method for manufacturing the above-mentioned TFT array substrate provided by the embodiment of the present invention, as shown in FIG. 5 , after the pattern of the insulating layer having at least one first groove is formed in step S402, it may include :
S403、在绝缘层上形成具有第二凹槽的透明导电层的图形,且透明导电层通过第一凹槽与公共电极金属层电性相连。S403, forming a pattern of a transparent conductive layer having a second groove on the insulating layer, and the transparent conductive layer is electrically connected to the common electrode metal layer through the first groove.
下面以两个具体的实例详细的说明本发明实施例提供的TFT阵列基板的制作方法。The manufacturing method of the TFT array substrate provided by the embodiment of the present invention will be described in detail below with two specific examples.
实例一:如图6所示,制作TFT阵列基板的具体步骤如下:Example 1: As shown in Figure 6, the specific steps for making a TFT array substrate are as follows:
S601、在衬底基板上形成第二电极金属层的图形;S601, forming a pattern of the second electrode metal layer on the base substrate;
在具体实施时,当制作的TFT基板为ADS面板或IPS面板中的基板时,在衬底基板上沉积一层第二电极金属层,材料可以为ITO,通过构图工艺保留对应于将要制作的公共电极金属层所在区域的第二电极金属层;In specific implementation, when the TFT substrate made is a substrate in an ADS panel or an IPS panel, a second electrode metal layer is deposited on the base substrate, and the material can be ITO, and the corresponding common electrode to be made is reserved through the patterning process. the second electrode metal layer in the area where the electrode metal layer is located;
S602、在形成有第二电极金属层的衬底基板上形成公共电极金属层的图形;S602, forming a pattern of the common electrode metal layer on the base substrate on which the second electrode metal layer is formed;
在具体实施时,在第二电极金属层上沉积一层栅极金属材料,通过构图工艺,具体可以采用涂覆、沉积、溅射等的方法,形成呈三角状且平坦的公共电极金属层的图形;In specific implementation, a layer of gate metal material is deposited on the second electrode metal layer, and a triangular and flat common electrode metal layer can be formed by patterning, specifically, by methods such as coating, deposition, sputtering, etc. graphics;
S603、在公共电极金属层上形成具有至少一个第一凹槽的栅绝缘层和钝化层的图形;S603, forming a pattern of a gate insulating layer and a passivation layer having at least one first groove on the common electrode metal layer;
在具体实施时,在公共电极金属层上沉积一层栅绝缘层材料和钝化层材料,通过同一构图工艺对对应于第一凹槽位置的栅绝缘层材料和钝化层材料进行完全刻蚀;需要说明的是,公共电极金属层的顶层部分在此次构图工艺中可以刻蚀掉一部分,或者,对顶层部分不进行刻蚀,在此不作限定;In specific implementation, a layer of gate insulating layer material and passivation layer material is deposited on the common electrode metal layer, and the gate insulating layer material and passivation layer material corresponding to the position of the first groove are completely etched through the same patterning process ; It should be noted that part of the top layer of the common electrode metal layer can be etched away in this patterning process, or the top layer part can not be etched, which is not limited here;
S604、在钝化层上形成具有第二凹槽的透明导电层的图形,且透明导电层通过第一凹槽与公共电极金属层电性相连。S604, forming a pattern of a transparent conductive layer having a second groove on the passivation layer, and the transparent conductive layer is electrically connected to the common electrode metal layer through the first groove.
在具体实施时,在钝化层上直接沉积一层透明导电层,材料可以为ITO,此时,由于钝化层上已形成有第一凹槽,形成的ITO层会形成与第一凹槽匹配的第二凹槽,且与公共电极金属层电性相连。In specific implementation, a layer of transparent conductive layer is directly deposited on the passivation layer. The material can be ITO. The matched second groove is electrically connected with the common electrode metal layer.
至此,经过实例一提供的上述步骤S601至S604制作出了本发明实施例提供的上述TFT阵列基板。So far, the above-mentioned TFT array substrate provided by the embodiment of the present invention has been fabricated through the above-mentioned steps S601 to S604 provided in Example 1.
实例二:如图7所示,制作TFT阵列基板的具体步骤如下:Example 2: As shown in Figure 7, the specific steps for making a TFT array substrate are as follows:
S701、在衬底基板上形成栅绝缘层的图形;S701, forming a pattern of a gate insulating layer on the base substrate;
在具体实施时,在衬底基板上沉积一层栅绝缘层,通过构图工艺保留对应于将要制作的公共电极金属层所在区域的栅绝缘层;In specific implementation, a layer of gate insulating layer is deposited on the base substrate, and the gate insulating layer corresponding to the area where the common electrode metal layer to be fabricated is retained through a patterning process;
S702、在形成有栅绝缘层的衬底基板上形成公共电极金属层的图形;S702, forming a pattern of the common electrode metal layer on the substrate on which the gate insulating layer is formed;
在具体实施时,在栅绝缘层上沉积一层源漏极金属材料,通过构图工艺,具体可以采用涂覆、沉积、溅射等的方法,形成呈三角状且平坦的公共电极金属层的图形;In specific implementation, a layer of source-drain metal material is deposited on the gate insulating layer, and a triangular and flat pattern of the common electrode metal layer can be formed through a patterning process, specifically, coating, deposition, sputtering, etc. ;
S703、在公共电极金属层上形成具有至少一个第一凹槽的钝化层的图形;S703, forming a pattern of a passivation layer having at least one first groove on the common electrode metal layer;
在具体实施时,在公共电极金属层上沉积一层钝化层材料,通过同一构图工艺对对应于第一凹槽位置的钝化层材料进行完全刻蚀;需要说明的是,公共电极金属层的顶层部分在此次构图工艺中可以刻蚀掉一部分,或者,顶层部分不进行刻蚀,在此不作限定;In specific implementation, a layer of passivation layer material is deposited on the common electrode metal layer, and the passivation layer material corresponding to the position of the first groove is completely etched through the same patterning process; it should be noted that the common electrode metal layer Part of the top layer part of the patterning process can be etched away, or the top layer part is not etched, which is not limited here;
S704、在钝化层上形成具有第二凹槽的透明导电层的图形,且透明导电层通过第一凹槽与公共电极金属层电性相连。S704, forming a pattern of a transparent conductive layer having a second groove on the passivation layer, and the transparent conductive layer is electrically connected to the common electrode metal layer through the first groove.
在具体实施时,在钝化层上直接沉积一层透明导电层,材料可以为ITO,此时,由于钝化层上已形成有第一凹槽,形成的ITO层会形成与第一凹槽匹配的第二凹槽,且与公共电极金属层电性相连。In specific implementation, a layer of transparent conductive layer is directly deposited on the passivation layer. The material can be ITO. The matched second groove is electrically connected with the common electrode metal layer.
至此,经过实例二提供的上述步骤S701至S704制作出了本发明实施例提供的上述TFT阵列基板。So far, the above-mentioned TFT array substrate provided by the embodiment of the present invention has been manufactured through the above-mentioned steps S701 to S704 provided in Example 2.
基于同一发明构思,本发明实施例还提供了一种液晶显示面板,包括上述任一种方式的TFT阵列基板和与该TFT阵列基板相对设置的对向基板,以及位于TFT阵列基板和对向基板之间的液晶层。该液晶面板的实施可以参见上述TFT阵列基板的实施例,重复之处不再赘述。Based on the same inventive concept, an embodiment of the present invention also provides a liquid crystal display panel, including a TFT array substrate in any one of the above modes and an opposite substrate disposed opposite to the TFT array substrate, and a panel between the TFT array substrate and the opposite substrate between the liquid crystal layers. For the implementation of the liquid crystal panel, reference may be made to the above-mentioned embodiments of the TFT array substrate, and repeated descriptions will not be repeated.
基于同一发明构思,本发明实施例还提供了一种显示装置,包括本发明实施例提供的上述液晶显示面板,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本发明的限制。该显示装置的实施可以参见上述液晶显示面板和TFT阵列基板的实施例,重复之处不再赘述。Based on the same inventive concept, an embodiment of the present invention also provides a display device, including the above-mentioned liquid crystal display panel provided by the embodiment of the present invention, and the display device can be: a mobile phone, a tablet computer, a TV set, a monitor, a notebook computer, a digital photo frame , navigator and any other product or component with display function. The other essential components of the display device should be understood by those of ordinary skill in the art, and will not be repeated here, nor should they be regarded as limitations on the present invention. For the implementation of the display device, reference may be made to the above-mentioned embodiments of the liquid crystal display panel and the TFT array substrate, and repeated descriptions will not be repeated.
本发明实施例提供的一种TFT阵列基板、其制作方法、液晶显示面板及显示装置,包括:衬底基板,设置在衬底基板上位于两个PAD区域之间呈三角状的公共电极金属层,以及设置在公共电极金属层上的绝缘层,PAD区域为TFT阵列基板上的显示区域外围的布线区域;其中,绝缘层的表面具有至少一个第一凹槽。由于在绝缘层上设置了至少一个第一凹槽,可以用来减弱配向膜溶液向公共电极金属层所在区域聚集并向外扩散,解决了显示区域的配向膜溶液减少且溶液分布不均匀,形成的配向膜厚度偏薄且均匀性较差,产生云纹不良的问题,达到了使显示区域的配向膜溶液能够均匀分布,避免云纹不良,进而提高显示面板的品质。A TFT array substrate, a manufacturing method thereof, a liquid crystal display panel, and a display device provided by an embodiment of the present invention include: a base substrate, a triangular common electrode metal layer disposed on the base substrate between two PAD regions , and an insulating layer disposed on the common electrode metal layer, the PAD area is a wiring area on the periphery of the display area on the TFT array substrate; wherein, the surface of the insulating layer has at least one first groove. Since at least one first groove is provided on the insulating layer, it can be used to weaken the aggregation of the alignment film solution to the area where the common electrode metal layer is located and to diffuse outward, which solves the problem of the reduction of the alignment film solution in the display area and the uneven distribution of the solution. The thickness of the alignment film is relatively thin and the uniformity is poor, resulting in the problem of poor moiré, so that the alignment film solution in the display area can be evenly distributed, avoiding poor moiré, and thereby improving the quality of the display panel.
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalent technologies, the present invention also intends to include these modifications and variations.
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