CN104752371A - Polyimide photosensitive layer and preparation method and packaging method thereof - Google Patents
Polyimide photosensitive layer and preparation method and packaging method thereof Download PDFInfo
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- CN104752371A CN104752371A CN201310739257.4A CN201310739257A CN104752371A CN 104752371 A CN104752371 A CN 104752371A CN 201310739257 A CN201310739257 A CN 201310739257A CN 104752371 A CN104752371 A CN 104752371A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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Abstract
The invention discloses a polyimide photosensitive layer. Based on 100 parts by weight, the polyimide photosensitive layer comprises, in parts by weight, 1-30 parts of nanometer silicon carbide and 65-99 parts of photosensitive polyimide slurry. The invention further discloses a preparation method and a packaging method of the polyimide photosensitive layer. In the polyimide photosensitive layer of the invention, the nanometer silicon carbide is added to the photosensitive polyimide slurry, and the nanometer silicon carbide is uniformly dispersed in the photosensitive polyimide slurry to form a heat conduction network of nanometer silicon carbide. Thus, a heat transfer path is provided, and the thermal expansion coefficient of the polyimide photosensitive layer is reduced. By adopting the polyimide photosensitive layer as a photosensitive polymer, the stability of semiconductor devices can be improved.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to a polyimide photosensitive layer, a preparation method and a packaging method thereof.
Background
Semiconductor devices are used in various electronic applications such as personal computers, cellular phones, digital cameras, and other electronic devices. Semiconductor devices are typically manufactured by sequentially depositing materials for insulating or dielectric layers, conductive layers, and semiconductive layers over a semiconductor substrate, and patterning the various material layers using photolithography to form circuit elements and components thereon.
The semiconductor industry continues to increase the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) by continuing to reduce minimum feature sizes, which allows more components to be integrated into a given area. In some applications, these smaller electronic components also require smaller packages that utilize less area than packages in the past.
Accordingly, new packaging technologies such as Wafer Level Packaging (WLP) have begun to be developed in which Integrated Circuits (ICs) are disposed on a carrier having wiring for establishing connections with the ICs and other electrical components. These relatively new packaging techniques for semiconductors face manufacturing challenges.
In the prior art packaging process, a photopolymer (e.g., polyimide PI) is required, which acts as a photoresist and also provides a flat surface for the redistribution layer and protects the underlying substrate. However, the photosensitive polymer has a large thermal resistance and a large thermal expansion coefficient, which affects the heat dissipation performance of the semiconductor device and further affects the stability of the semiconductor device, so that the underlying metal of the semiconductor device is broken, and the semiconductor device fails.
Therefore, how to provide a polyimide photosensitive layer, a preparation method thereof and a packaging method thereof, which can reduce the thermal expansion coefficient of photosensitive polymers and improve the stability of semiconductor devices, has become a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a polyimide photosensitive layer, a preparation method and a packaging method thereof, which can reduce the thermal expansion coefficient of a photosensitive polymer and improve the stability of a semiconductor device.
In order to solve the technical problem, the invention provides a polyimide photosensitive layer which is formed on a substrate and comprises the following components in parts by weight of 100 parts of the polyimide photosensitive layer:
1-30 parts of nano silicon carbide;
65-99 parts of photosensitive polyimide slurry.
Further, in the polyimide photosensitive layer, the average particle size of the nano silicon carbide is 1nm to 50 nm.
Further, in the polyimide photosensitive layer, the polyimide photosensitive layer further comprises 0-5 parts of a coupling agent.
Further, in the polyimide photosensitive layer, the coupling agent is a silane coupling agent.
According to another aspect of the present invention, the present invention also provides a method for preparing a polyimide photosensitive layer, comprising:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a composite slurry;
coating the composite slurry on a substrate to form the polyimide photosensitive layer;
the photosensitive polyimide coating comprises, by weight, 100 parts of a polyimide photosensitive layer, 1-30 parts of nano silicon carbide and 65-99 parts of photosensitive polyimide slurry.
Further, in the preparation method of the polyimide photosensitive layer, the average particle size of the nano silicon carbide is 1nm to 50 nm.
Further, in the preparation method of the polyimide photosensitive layer, the polyimide photosensitive layer further comprises 0-5 parts of a coupling agent.
Further, in the preparation method of the polyimide photosensitive layer, the coupling agent is a silane coupling agent.
According to another aspect of the present invention, the present invention also provides a packaging method, including:
providing a substrate;
forming a first polyimide photosensitive layer on the substrate;
forming a redistribution layer on the first polyimide photosensitive layer;
forming a second polyimide photosensitive layer on the redistribution layer;
forming a bottom metal layer on the second polyimide photosensitive layer;
forming a conductive bump on the bottom metal layer; wherein,
the first polyimide photosensitive layer comprises the following components in parts by weight of 100 parts: 1-30 parts of nano silicon carbide; 65-99 parts of photosensitive polyimide slurry;
the second polyimide photosensitive layer comprises the following components in parts by weight of 100 parts: 1-30 parts of nano silicon carbide; 65-99 parts of photosensitive polyimide slurry.
Further, in the packaging method, the step of forming a first polyimide photosensitive layer on the substrate includes:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a first composite slurry;
and coating the composite slurry on the substrate to form the first polyimide photosensitive layer.
Further, in the packaging method, the content of the nano silicon carbide in the first polyimide photosensitive layer is 1-25 parts.
Further, in the encapsulation method, the step of forming a second polyimide photosensitive layer on the substrate includes:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a second composite slurry;
and coating the composite slurry on the redistribution layer to form the second polyimide photosensitive layer.
Further, in the packaging method, the content of the nano silicon carbide in the second polyimide photosensitive layer is 5-30 parts.
Further, in the packaging method, the first polyimide photosensitive layer or/and the second polyimide photosensitive layer further comprises 0-5 parts of a coupling agent.
Further, in the encapsulation method, the coupling agent is a silane coupling agent.
Further, in the encapsulation method, the average particle size of the nano silicon carbide is 1nm to 50 nm.
Compared with the prior art, the polyimide photosensitive layer, the preparation method and the packaging method thereof provided by the invention have the following advantages:
the invention provides a polyimide photosensitive layer, a preparation method and a packaging method thereof, wherein the polyimide photosensitive layer comprises the following components in parts by weight of 100: 1-30 parts of nano silicon carbide; photosensitive polyimide slurry 65-99 parts, compare with prior art photosensitive polyimide slurry add nanometer carborundum, nanometer carborundum disperses evenly in photosensitive polyimide slurry, forms the heat conduction network of nanometer carborundum to provide the transmission path of heat, make the coefficient of thermal expansion of the photosensitive layer of polyimide reduces, adopts the photosensitive layer of polyimide is as photosensitive polymer, can improve semiconductor device's stability.
Drawings
FIG. 1 is a schematic view of a polyimide photosensitive layer according to an embodiment of the present invention;
FIG. 2 is a flow chart of a method for fabricating a polyimide photo-sensitive layer according to an embodiment of the present invention;
FIG. 3 is a flow chart of a method for preparing a polyimide photosensitive layer according to an embodiment of the present invention;
FIG. 4 is a flow chart of a packaging method according to an embodiment of the invention;
fig. 5-9 are schematic diagrams of device structures in a packaging method according to an embodiment of the invention.
Detailed Description
The polyimide photosensitive layer, the method for preparing the same, and the method for encapsulating the same according to the present invention will be described in more detail with reference to the schematic drawings, in which preferred embodiments of the present invention are shown, it being understood that those skilled in the art can modify the present invention described herein while still achieving the advantageous effects of the present invention. Accordingly, the following description should be construed as broadly as possible to those skilled in the art and not as limiting the invention.
In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions or constructions are not described in detail since they would obscure the invention in unnecessary detail. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific details must be set forth in order to achieve the developer's specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art.
The invention is described in more detail in the following paragraphs by way of example with reference to the accompanying drawings. Advantages and features of the present invention will become apparent from the following description and from the claims. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
The core idea of the present invention is to provide a polyimide photosensitive layer 110, as shown in fig. 1, wherein the polyimide photosensitive layer 110 is formed on a substrate 100, and the polyimide photosensitive layer 110 comprises the following components in 100 parts by weight: 1-30 parts of nano silicon carbide 112; 65-99 parts of photosensitive polyimide paste 111, compared with the prior art, nano silicon carbide 112 is added into the photosensitive polyimide paste 111, and the nano silicon carbide 112 is uniformly dispersed in the photosensitive polyimide paste 111 to form a heat conducting network of the nano silicon carbide 112, so that a heat transmission path is provided, the thermal expansion coefficient of the polyimide photosensitive layer 110 is reduced, and the stability of a semiconductor device can be improved by adopting the polyimide photosensitive layer 110 as a photosensitive polymer.
The nano silicon carbide 112 accounts for 1-30 parts, such as 2 parts, 5 parts, 10 parts, 15 parts, 20 parts, 25 parts, etc., in the polyimide photosensitive layer 110, and is determined according to the requirements of the polyimide photosensitive layer 110, wherein when the content of the nano silicon carbide 112 is higher, the viscosity of the composite slurry of the nano silicon carbide 112 and the photosensitive polyimide slurry 111 is higher, and the thermal conductivity is better. The average particle size of the nano-silicon carbide 112 is 1nm to 50nm, for example, 2nm, 5nm, 10nm, 20nm, 30nm, 40nm, 45nm, etc., and it is ensured that the nano-silicon carbide 112 is uniformly dispersed in the photosensitive polyimide paste 111, but the average particle size of the nano-silicon carbide 112 is not limited to 1nm to 50 nm.
Preferably, the polyimide photosensitive layer 110 further includes 0 to 5 parts of a coupling agent, wherein the coupling agent accounts for 2 parts, 3 parts, 4 parts and the like in the polyimide photosensitive layer, and the addition of the coupling agent can make the nano silicon carbide 112 more uniformly dispersed in the photosensitive polyimide paste 111. The coupling agent is preferably a silane coupling agent, and the coupling agent is not limited to a silane coupling agent, and may be another coupling agent.
In combination with the core idea, the present invention further provides a method for preparing a polyimide photosensitive layer, as shown in fig. 2, including:
step S11 is performed: providing a photosensitive polyimide paste 111;
step S12 is performed: the nano silicon carbide 112 is added to the photosensitive polyimide paste 111, and stirred to form a composite paste. Preferably, the nano silicon carbide 112 may be surface-modified by the coupling agent, and then the modified nano silicon carbide 112 is added to the photosensitive polyimide paste 111 to form the composite paste;
step S13 is performed: the composite paste is coated on a substrate 100 to form the polyimide photosensitive layer 110. Generally, after the polyimide photosensitive layer 110 is formed, a curing process needs to be performed on the polyimide photosensitive layer 110, which is understood by those skilled in the art and will not be described herein in detail.
In combination with the core idea, the present invention further provides a packaging method, as shown in fig. 3, including:
step S21 is performed: providing a substrate 200, as shown in fig. 4, wherein the substrate 200 includes necessary device structures such as an interconnection metal layer, which is common knowledge in the art and is not described herein again;
step S22 is performed: a first polyimide photosensitive layer 210 is formed on the substrate 200 as shown in fig. 5. Generally, the first polyimide photosensitive layer 210 has a first pattern 210a therein, which is common knowledge in the art and will not be described herein. In step S23, the first polyimide photosensitive layer 210 is a photoresist used for preparing the first pattern 210a, and the first polyimide photosensitive layer 210 provides a flat surface for the redistribution layer and protects the underlying substrate 200. Preferably, in this embodiment, in the packaging method, the step S22 adopts the method for preparing the polyimide photosensitive layer of the present invention, which specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: the nano silicon carbide 112 is added to the photosensitive polyimide paste 111, and stirred to form a first composite paste. Preferably, in the present embodiment, since the first polyimide photosensitive layer 210 is thin, 1 to 25 parts of the nano silicon carbide 112 is added to the photosensitive polyimide paste 111;
the third sub-step: the composite paste is coated on the substrate 200 to form the first polyimide photosensitive layer 210, such that 1-25 parts of the nano silicon carbide 112 is contained in the first polyimide photosensitive layer 210. In the present embodiment, after the first polyimide photosensitive layer 210 is cured, the first pattern 210a is prepared;
step S23 is performed: forming a redistribution layer 220 on the first polyimide photosensitive layer 210 to be in conductive communication with the interconnect metal layer in the substrate 200, as shown in fig. 6, wherein the redistribution layer 220 is common general knowledge in the art and is not described herein;
step S24 is performed: a second polyimide photosensitive layer 230 is formed on the redistribution layer 220 as shown in fig. 7. Generally, the second polyimide photosensitive layer 230 has a second pattern 230a therein, which is common knowledge in the art and will not be described herein. In step S25, the first polyimide photosensitive layer 210 provides a flat surface for the underlying metal layer and protects the underlying redistribution layer 220. Preferably, in this embodiment, in the packaging method, the step S24 adopts the method for preparing the polyimide photosensitive layer of the present invention, which specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: the nano silicon carbide 112 is added to the photosensitive polyimide paste 111, and stirred to form a second composite paste. Preferably, in this embodiment, since the second polyimide photosensitive layer 230 is thicker, 5 to 30 parts of the nano silicon carbide 112 is added to the photosensitive polyimide paste 111;
the third sub-step: and coating the composite paste on the redistribution layer 220 to form the second polyimide photosensitive layer 230, so that the second polyimide photosensitive layer 2300 contains 5-30 parts of the nano silicon carbide 112. In this embodiment, after the second polyimide photosensitive layer 230 is cured, the second pattern 230a is prepared;
step S25 is performed: forming a bottom metal layer 240 on the second polyimide photosensitive layer 230, as shown in fig. 8, wherein the bottom metal layer 240 is common general knowledge in the art and is not described herein again;
step S26 is performed: a conductive bump 250 is formed on the underlying metal layer 240, as shown in fig. 9, wherein the conductive bump 250 is a common knowledge in the art and is not described herein again.
The following examples of the polyimide photosensitive layer and the method for preparing the same and the method for encapsulating the same are given to clearly illustrate the contents of the present invention, and it should be understood that the contents of the present invention are not limited to the following examples, and other modifications by conventional technical means of those skilled in the art are also within the scope of the idea of the present invention.
[ first embodiment ] A method for manufacturing a semiconductor device
In the first embodiment, the polyimide photosensitive layer and the preparation method thereof are used for packaging a semiconductor device.
First, step S21 is performed: providing a substrate 200;
then, step S22 is performed: forming a first polyimide photosensitive layer 210 on the substrate 200, wherein the step S22 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 20 parts of nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a first composite slurry, wherein the average particle size of the nano silicon carbide 112 is 10 nm;
the third sub-step: coating the composite paste on the substrate 200 to form the first polyimide photosensitive layer 210, such that the first polyimide photosensitive layer 210 contains 10 parts of the nano silicon carbide 112;
subsequently, step S23 is performed: forming a redistribution layer 220 on the first polyimide photosensitive layer 210;
thereafter, step S24 is performed: forming a second polyimide photosensitive layer 230 on the redistribution layer 220, wherein the step S24 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 25 parts of the nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a second composite slurry, wherein the average particle size of the nano silicon carbide 112 is 20 nm;
the third sub-step: coating the composite slurry on the redistribution layer 220;
subsequently, step S25 is performed: forming a bottom metal layer 240 on the second polyimide photosensitive layer 230;
finally, step S26 is performed: a conductive bump 250 is formed on the underlying metal layer 240.
In the finally obtained semiconductor device, the first polyimide photosensitive layer 210 and the second polyimide photosensitive layer 230 have low thermal expansion coefficients, and the semiconductor device has good stability.
[ second embodiment ]
In the second embodiment, the polyimide photosensitive layer and the preparation method thereof are used for packaging a semiconductor device.
First, step S21 is performed: providing a substrate 200;
then, step S22 is performed: forming a first polyimide photosensitive layer 210 on the substrate 200, wherein the step S22 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 10 parts of nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a first composite slurry, wherein the average particle size of the nano silicon carbide 112 is 30 nm;
the third sub-step: coating the composite paste on the substrate 200 to form the first polyimide photosensitive layer 210, such that the first polyimide photosensitive layer 210 contains 5 parts of the nano silicon carbide 112;
subsequently, step S23 is performed: forming a redistribution layer 220 on the first polyimide photosensitive layer 210;
thereafter, step S24 is performed: forming a second polyimide photosensitive layer 230 on the redistribution layer 220, wherein the step S24 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 15 parts of nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a second composite slurry, wherein the average particle size of the nano silicon carbide 112 is 40 nm;
the third sub-step: coating the composite slurry on the redistribution layer 220;
subsequently, step S25 is performed: forming a bottom metal layer 240 on the second polyimide photosensitive layer 230;
finally, step S26 is performed: a conductive bump 250 is formed on the underlying metal layer 240.
In the finally obtained semiconductor device, the first polyimide photosensitive layer 210 and the second polyimide photosensitive layer 230 have low thermal expansion coefficients, and the semiconductor device has good stability.
[ third embodiment ]
In the third embodiment, the polyimide photosensitive layer and the preparation method thereof are used for packaging a semiconductor device.
First, step S21 is performed: providing a substrate 200;
then, step S22 is performed: forming a first polyimide photosensitive layer 210 on the substrate 200, wherein the step S22 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 5 parts of the nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a first composite slurry, wherein the average particle size of the nano silicon carbide 112 is 5 nm;
the third sub-step: coating the composite paste on the substrate 200 to form the first polyimide photosensitive layer 210, such that the first polyimide photosensitive layer 210 contains 10 parts of the nano silicon carbide 112;
subsequently, step S23 is performed: forming a redistribution layer 220 on the first polyimide photosensitive layer 210;
thereafter, step S24 is performed: forming a second polyimide photosensitive layer 230 on the redistribution layer 220, wherein the step S24 adopts the above polyimide photosensitive layer preparation method of the present invention, and specifically includes:
a first sub-step: providing a photosensitive polyimide paste 111;
the second sub-step: adding 5 parts of the nano silicon carbide 112 into the photosensitive polyimide slurry 111, and stirring to form a second composite slurry, wherein the average particle size of the nano silicon carbide 112 is 15 nm;
the third sub-step: coating the composite slurry on the redistribution layer 220;
subsequently, step S25 is performed: forming a bottom metal layer 240 on the second polyimide photosensitive layer 230;
finally, step S26 is performed: a conductive bump 250 is formed on the underlying metal layer 240.
In the finally obtained semiconductor device, the first polyimide photosensitive layer 210 and the second polyimide photosensitive layer 230 have low thermal expansion coefficients, and the semiconductor device has good stability.
In summary, the invention provides a polyimide photosensitive layer, a preparation method thereof and a packaging method thereof, wherein the polyimide photosensitive layer comprises the following components in 100 parts by weight: 1-30 parts of nano silicon carbide; 65-99 parts of photosensitive polyimide slurry. Compared with the prior art, the invention has the following advantages:
nanometer silicon carbide is added into the photosensitive polyimide slurry, and the nanometer silicon carbide is uniformly dispersed in the photosensitive polyimide slurry to form a heat conduction network of the nanometer silicon carbide, so that a heat transmission path is provided, the thermal expansion coefficient of the polyimide photosensitive layer is reduced, and the polyimide photosensitive layer is adopted as a photosensitive polymer, so that the stability of a semiconductor device can be improved.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.
Claims (16)
1. A polyimide photosensitive layer is formed on a substrate and comprises the following components in parts by weight of 100 parts of the polyimide photosensitive layer:
1-30 parts of nano silicon carbide;
65-99 parts of photosensitive polyimide slurry.
2. The polyimide photosensitive layer of claim 1, wherein the nano silicon carbide has an average particle size of 1nm to 50 nm.
3. The polyimide photosensitive layer of claim 1 or 2, further comprising 0 to 5 parts of a coupling agent.
4. The polyimide photosensitive layer of claim 3, wherein the coupling agent is a silane coupling agent.
5. A method for preparing a polyimide photosensitive layer, comprising:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a composite slurry;
coating the composite slurry on a substrate to form the polyimide photosensitive layer;
the photosensitive polyimide coating comprises, by weight, 100 parts of a polyimide photosensitive layer, 1-30 parts of nano silicon carbide and 65-99 parts of photosensitive polyimide slurry.
6. The method of preparing a polyimide photosensitive layer according to claim 5, wherein the nano silicon carbide has an average particle size of 1nm to 50 nm.
7. The method of preparing the polyimide photosensitive layer according to claim 5 or 6, wherein the polyimide photosensitive layer further comprises 0 to 5 parts of a coupling agent.
8. The method for producing a polyimide photosensitive layer according to claim 7, wherein the coupling agent is a silane coupling agent.
9. A method of packaging, comprising:
providing a substrate;
forming a first polyimide photosensitive layer on the substrate;
forming a redistribution layer on the first polyimide photosensitive layer;
forming a second polyimide photosensitive layer on the redistribution layer;
forming a bottom metal layer on the second polyimide photosensitive layer;
forming a conductive bump on the bottom metal layer; wherein,
the photosensitive polyimide film comprises the following components in 100 parts by weight of the first polyimide photosensitive layer; 1-30 parts of nano silicon carbide; 65-99 parts of photosensitive polyimide slurry;
the second polyimide photosensitive layer comprises the following components in parts by weight of 100 parts: 1-30 parts of nano silicon carbide; 65-99 parts of photosensitive polyimide slurry.
10. The packaging method of claim 9, wherein the step of forming a first polyimide photosensitive layer on the substrate comprises:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a first composite slurry;
and coating the composite slurry on the substrate to form the first polyimide photosensitive layer.
11. The encapsulation method according to claim 10, wherein the nano silicon carbide is contained in the first polyimide photosensitive layer in an amount of 1 to 25 parts.
12. The packaging method of claim 9, wherein the step of forming a second polyimide photosensitive layer on the substrate comprises:
providing photosensitive polyimide paste;
adding the nano silicon carbide into the photosensitive polyimide slurry, and stirring to form a second composite slurry;
and coating the composite slurry on the redistribution layer to form the second polyimide photosensitive layer.
13. The encapsulation method according to claim 12, wherein the second polyimide photosensitive layer contains 5 to 30 parts of the nano silicon carbide.
14. The encapsulation method according to any one of claims 9 to 13, wherein the first polyimide photosensitive layer or/and the second polyimide photosensitive layer further comprises 0 to 5 parts of a coupling agent.
15. The encapsulation method of claim 14, wherein the coupling agent is a silane coupling agent.
16. The encapsulation method according to any one of claims 9 to 13, wherein the nano silicon carbide has an average particle diameter of 1nm to 50 nm.
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| WO2018045792A1 (en) * | 2016-09-08 | 2018-03-15 | 京东方科技集团股份有限公司 | Flexible substrate, method for manufacturing same, and flexible display device |
| US10749125B2 (en) | 2016-09-08 | 2020-08-18 | Boe Technology Group Co., Ltd. | Flexible substrate and fabrication method thereof, and flexible display apparatus |
| US11374184B2 (en) | 2016-09-08 | 2022-06-28 | Boe Technology Group Co., Ltd. | Flexible substrate and fabrication method thereof, and flexible display apparatus |
| US11665956B2 (en) | 2016-09-08 | 2023-05-30 | Boe Technology Group Co., Ltd. | Flexible substrate and fabrication method thereof, and flexible display apparatus |
| US12029105B2 (en) | 2016-09-08 | 2024-07-02 | Boe Technology Group Co., Ltd. | Flexible substrate and fabrication method thereof, and flexible display apparatus |
| US12295250B2 (en) | 2016-09-08 | 2025-05-06 | Boe Technology Group Co., Ltd. | Flexible substrate and fabrication method thereof, and flexible display apparatus |
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