CN104749900B - The forming method of secondary graphics and the modification method of exposure targeted graphical - Google Patents
The forming method of secondary graphics and the modification method of exposure targeted graphical Download PDFInfo
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- CN104749900B CN104749900B CN201310745670.1A CN201310745670A CN104749900B CN 104749900 B CN104749900 B CN 104749900B CN 201310745670 A CN201310745670 A CN 201310745670A CN 104749900 B CN104749900 B CN 104749900B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The forming method of a kind of secondary graphics and a kind of modification method exposing targeted graphical, the forming method of described secondary graphics includes: by described lower floor figure and current layer graphics overlay, forms second graph；Described second graph is negated, it is thus achieved that the 3rd figure；Dimensions length and the width of described 3rd spirte are all reduced the first preset value, forms the 4th figure；Removing part the 4th spirte that can not expose in described 4th figure, form the 5th figure, described 5th figure is as the secondary graphics of current layer figure.The forming method of described exposure targeted graphical includes: by described lower floor exposure targeted graphical and graphics overlay to be revised, and forms overlapping figure；Set up photoetching resolution restriction table；Limit table according to described photoetching resolution, to there being with first lower floor's spirte the size of overlapping part first positive spirte to be repaired to be modified, form the first correction spirte.The light transmittance of mask plate can be improved, improve the accuracy that exposure targeted graphical is modified.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to forming method and a kind of exposure target of a kind of secondary graphics
The modification method of figure.
Background technology
Along with the continuous decline of semiconductor technology node, under the conditions of conventional lithography process, utilize a mask plate as mask
Forming patterning process and encounter restriction, adjacent pattern pitch is too small, due to optical proximity effect, it may appear that adjacent pattern is glued
Phenomenon even.
More and more less based on semiconductor device critical size, utilize Dual graphing (Double patterning) method
Solve problem described above.
Double-patterning method is divided into two kinds of figures, the respectively first mask pattern and second by needing the figure formed
Mask pattern, carries out the most graphical formation the first figure the most respectively, carries out second time and graphically forms second graph, logical
Cross the method for such Dual graphing and can avoid the occurrence of that adjacent pattern pitch-row is too small and the optical proximity effect that causes.
By double-pattern metallization processes etches polycrystalline silicon layer in prior art, form polysilicon gate, to improve polysilicon
The accuracy of gauge of grid and uniformity.By the first mask pattern polysilicon layer carried out first graphical, form strip
The gate patterns of shape, then carries out second graphical by the second mask pattern to polysilicon layer, by the gate patterns of strip
Cut to form polysilicon gate.
Second mask pattern is determined by the first mask pattern, the spirte negligible amounts in existing second mask pattern,
The light transmittance causing mask plate is poor, thus causes the exposure figure that the photoetching process in second graphical formed on a photoresist
Size uneven, impact is subsequently formed the accuracy of etched features.
On the other hand, during the mask plate patterns during forming second graphical, it is usually according to end form
The etched features become, designs the exposure targeted graphical on photoresist layer；Then further according to described exposure targeted graphical, pass through
OPC model is calculated the figure finally needing to be formed on mask plate.In view of the etching deviation during second graphical
Problem, needs exposure targeted graphical is performed etching deviation compensation, but owing to the compensation effect of described exposure targeted graphical is subject to
It is to the impact of etched features of the material of lower floor, both relevant to the size of the spirte self in exposure targeted graphical and spacing,
Also relevant to the graphic material in the etched features of the material of lower floor and size, so being difficult to exposure targeted graphical is carried out standard
True etching deviation compensates.
Summary of the invention
The problem that the present invention solves is to provide the forming method of a kind of secondary graphics, improves the accuracy of exposure figure；Also
A kind of modification method exposing targeted graphical is provided, improves and described exposure targeted graphical is performed etching the accurate of deviation compensation
Property.
For solving the problems referred to above, the present invention provides the forming method of a kind of secondary graphics, including: lower floor's figure is provided and works as
Front layer pattern, described lower floor figure is the first figure, and described current layer figure includes some current layer spirtes；Under described
Layer pattern and current layer graphics overlay, form second graph；Described second graph is negated, it is thus achieved that the 3rd figure, the described 3rd
Figure and second graph are complementary graph, and described 3rd figure includes some 3rd spirtes；Keep described 3rd spirte
Center constant, the dimensions length of described 3rd spirte and width are all reduced the first preset value, form the 4th figure,
Described 4th figure includes some 4th spirtes；Remove part the 4th subgraph that can not expose in described 4th figure
Shape, forms the 5th figure, and described 5th figure is as the secondary graphics of current layer figure.
Optionally, described first preset value is in the range of 0nm～100nm.
Optionally, the method removing part the 4th spirte that can not expose in described 4th figure includes: remove institute
State length or width in the 4th figure and be less than part the 4th spirte of the second preset value.
Optionally, remove length or width in described 4th figure and be less than the side of part the 4th spirte of the second preset value
Method includes: the center keeping the 4th spirte is constant, the length and width of all 4th spirtes is all reduced second pre-
If value, part the 4th spirte disappears；Then the length and width of the 4th spirte after remaining reducing is increased second pre-
If value, remaining part the 4th spirte is made to recover to original size.
Optionally, described second preset value is the minimum figure width that the current layer spirte in current layer figure can expose
Degree.
Optionally, described second preset value is in the range of 20nm～160nm.
Optionally, removing the 4th spirte that can not expose in described 4th figure, the method forming the 5th figure is also wrapped
Include: adjacent adjacent 4th spirte being smaller than the 3rd preset value is merged.
Optionally, the method that adjacent adjacent 4th spirte being smaller than the 3rd preset value merges is included: keep the
The center of four spirtes is constant, and the length and width of the 4th spirte is increased the 3rd preset value, part adjacent the 4th
Spacing between spirte disappears, and the 4th adjacent spirte merges, then the length and width of the 4th spirte after increasing
Reduce the 3rd preset value.
Optionally, described 3rd preset value is the minimum pattern pitch that can expose in current layer figure.
Optionally, described 3rd preset value is in the range of 20nm～36nm.
Optionally, can first remove length or width in described 4th figure and be less than part the 4th subgraph of the second preset value
Shape, more adjacent adjacent 4th spirte being smaller than the 3rd preset value is merged；Or first to be smaller than the 3rd pre-by adjacent
If adjacent 4th spirte of value merges, then removes length or width part the 4th spirte less than the second preset value.
The present invention also provides for a kind of modification method exposing targeted graphical, including: lower floor's exposure targeted graphical is provided and treats
Correction pattern, described lower floor exposure targeted graphical includes first lower floor's spirte of some strips, described in treat in correction pattern
Including some first positive spirtes to be repaired；By described lower floor exposure targeted graphical and graphics overlay to be revised, form overlapping figure,
Described pattern bit to be revised exposes above targeted graphical in lower floor, part first positive spirte to be repaired and part the first lower floor subgraph
There is between shape lap；According to the spacing between graphic length, width and adjacent pattern, set up photoetching resolution and limit
Table, described photoetching resolution restriction table includes can exposure area and can not exposure area；Table is limited according to described photoetching resolution,
The center keeping described first positive spirte to be repaired is constant, has overlapping part first to be repaired to first lower floor's spirte
The size of positive spirte is modified, and forms the first correction spirte, make described first revise spirte enter can exposure area,
And be positioned at described can be closest to can not the position of exposure area in exposure area.
Optionally, described lower floor exposure targeted graphical also includes the first scattering spirte, corresponding, described in treat correction map
Shape also includes the second scattering spirte；In described overlapping figure, the second scattering spirte and the first scattering spirte are complete
Overlapping.
Optionally, also include: the center keeping described second scattering spirte is constant, by described second scattering subgraph
The length and width of shape increases the 4th preset value, makes the after increase second scattering spirte that first scattering spirte is completely covered.
Optionally, described 4th preset value is in the range of 20nm～140nm.
Optionally, the method for building up of described photoetching resolution restriction table includes: provide mask pattern, on described mask pattern
Having the spirte of some different in width and spacing, described spirte is the lightproof area of mask pattern；To described mask pattern
Being exposed, obtain exposure figure, described exposure figure includes some exposure spirtes；With the width of described exposure spirte and
Spacing between adjacent exposure spirte, respectively as abscissa and vertical coordinate, sets up photoetching resolution restriction table, described exposure
The width of spirte, the spacing between described exposure spirte and adjacent spirte are positioned in described photoetching resolution restriction table
Can exposure area, and the size area of the exposure figure that remaining is not formed be in photoetching resolution restriction table can not exposure region
Territory.
Optionally, the width range of the exposure spirte that described photoetching resolution restriction table uses is 60nm～6000nm,
Spacing between adjacent exposure spirte is 60nm～300nm.
Optionally, described lower floor exposure targeted graphical also includes some second lower floor's spirtes, described second time straton
Figure includes plural strip part the most on the same line, and connects the connecting portion of described strip part
Point；Corresponding, described in treat that correction pattern includes the second positive spirte to be repaired, in overlapping figure, described second positron to be repaired
Figure covers the coupling part of described second lower floor's spirte, and is positioned at the part strip portion of both sides, described coupling part
Point；Limit table according to described photoetching resolution, after the second positive spirte to be repaired is modified, obtain the second correction spirte, institute
Stating that the second correction spirte is positioned at can be closest to can not the position of exposure area in exposure area；Determine described second correction pattern
The length of side intersected with strip part, and the vertical dimension between coupling part is first size；Determine the second positive subgraph to be repaired
Minimum perpendicular distance between the length of side and coupling part that shape and strip part intersect is the second size；If first size is more than
Second size, then be modified described second positive spirte to be repaired, if described first size is less than or equal to the second size, then
Keep described second positive spirte to be repaired constant.
Optionally, described second size is in the range of 10nm～60nm.
Compared with prior art, technical scheme has the advantage that
In the forming method of the secondary graphics in technical scheme, by the first figure and current layer graphics overlay,
Form second graph；Negating second graph, it is thus achieved that the 3rd figure, described 3rd figure and second graph are complementary graph, institute
White space in described 3rd figure as second graph, described 3rd figure does not has with the spirte position in second graph
Overlap, so the position between the secondary graphics and the spirte of second graph that are formed after the 3rd figure carries out multi step strategy is also
There is no overlap；Then the center keeping described 3rd spirte is constant, by dimensions length and the width of described 3rd spirte
Degree all reduces the first preset value, forms the 4th figure, such that it is able to make the length of side of the 4th spirte and the length of side of the second spirte
Between position the most overlapping, the follow-up secondary graphics chosen from the 4th spirte being exposed and etch when,
The spirte in second graph would not be destroyed；Then part the 4th spirte that can not expose in described 4th figure is removed,
Form the 5th figure, the spirte of the 5th figure is added in current layer figure as secondary graphics, current layer figure can be increased
The light transmittance of shape mask plate, improves the uniformity of exposure figure size, and by above-mentioned steps, described secondary graphics also will not
Spirte in first figure of lower floor and current layer figure is impacted, thus does not interferes with the quasiconductor ultimately formed
The performance of device.
In the modification method of the exposure targeted graphical in technical scheme, lower floor is exposed targeted graphical with to be repaired
Positive graphics overlay, part the first lower floor spirte in lower floor's exposure targeted graphical is to be repaired with the part first treated in correction pattern
Positive spirte is by lap；Table is limited, to the described part first overlapping with first lower floor's spirte according to photoetching resolution
Positive spirte to be repaired is modified, formed first correction spirte, make described first revise spirte enter can exposure area, and
And be positioned at described can be closest to can not the position of exposure area in exposure area.On the one hand, entering can first the repairing of exposure area
Positive spirte can be engraved on photoresist layer exposure by light and realize；On the other hand, it is positioned at due to described first correction spirte
Can in exposure area closest to can not the position of exposure area, making described first correction pattern width is to meet conditions of exposure
Little value, so that the size removing the first lower floor spirte is minimum, makes the size of etched features and the design ultimately formed
It is worth identical or deviation is less, it is to avoid the performance of the semiconductor device that impact is formed.
Accompanying drawing explanation
Fig. 1 to Figure 13 is the schematic diagram of the forming process of the secondary graphics of the embodiment of the present invention；
Figure 14 to Figure 16 is the schematic diagram of the makeover process of the exposure targeted graphical of the embodiment of the present invention.
Detailed description of the invention
As described in the background art, in prior art, the chi of the exposure figure that the photoetching process in second graphical is formed
Very little uneven, and the size of the exposure figure that the photoetching process in second graphical is formed is uneven, this is due to second graph
In change, the figure light transmittance of the second mask pattern of employing is relatively low to be caused, owing to the light transmittance of the second mask pattern is relatively low, and meeting
The resolution causing photoetching process is relatively low, and the size of the exposure figure resulted in is uneven.
Providing the forming method of a kind of secondary graphics in embodiments of the invention, described secondary graphics will not be to lower map
Shape impacts, and can improve the light transmittance of current layer figure, improves the exposure efficiency of current layer figure.
Understandable, below in conjunction with the accompanying drawings to the present invention for enabling the above-mentioned purpose of the present invention, feature and advantage to become apparent from
Specific embodiment be described in detail.
One embodiment of the present of invention provides the forming method of a kind of secondary graphics.
Refer to Fig. 1, it is provided that lower floor's figure, described lower floor figure is the first figure 100.
Described first figure is the figure of auxiliary area.In the present embodiment, described first figure 100 includes source region auxiliary
Figure 101 and grid secondary graphics 102.Described active area secondary graphics 101 and grid secondary graphics 102 are used for adjusting active area
Layer and the pattern density of grid layer.In subsequent technique, need to retain described active area secondary graphics 101 and grid secondary graphics
102.And the position of the spirte in described first figure 100 can not add with follow-up formation in current layer figure above it
The position of secondary graphics have overlap.
Refer to Fig. 2, it is provided that current layer figure, by lower floor's figure and current layer graphics overlay, form second graph 200.
In the present embodiment, due to the figure that described current layer figure is secondary graphics region, so, working as of this overlying regions
Front layer pattern is blank figure.So, described second graph 200 is identical with the first figure 100.
Refer to Fig. 3, described second graph 200(be refer to Fig. 2) negate, it is thus achieved that the 3rd figure 300, described 3rd figure
Shape 300 and second graph 200 are complementary graph, and described 3rd figure 300 includes some 3rd spirtes 301.
Described negating refers to spirte in second graph 200 as the white space in the 3rd figure 300, by described
White space in two figures 200 makees some 3rd spirtes 301 of the 3rd figure 300.Described 3rd spirte 301 and second
Spirte 201(refer to Fig. 2) length of side position identical.
Refer to Fig. 4, keep described 3rd spirte 301(to refer to Fig. 3) center constant, by described 3rd son
The dimensions length of figure (refer to Fig. 3) and width all reduce the first preset value, form the 4th figure 400, described 4th figure
400 include some 4th spirtes 401.
Follow-up part the 4th spirte 401 chosen in described 4th figure 400 is using working as the first figure 100 upper strata
The secondary graphics added in front layer pattern.
The center of described 4th spirte 401 is identical with the center of the 3rd spirte 301, but the described 4th
The size being smaller in size than described 3rd spirte 301 of spirte 401, the length and width of the most described 4th spirte 401 and
Difference between the length and width of the 3rd spirte 301 of the 4th spirte 401 correspondence is the first preset value.Such that it is able to make
The length of side of the 4th spirte 401 refer to Fig. 2 with the second spirte 201() the length of side between position the most overlapping, but phase
The distance of 1/2 times away from the first preset value, such that it is able to guarantee that the secondary graphics chosen from the 4th spirte 401 is exposing
The when of light and etching, active area secondary graphics 101 will not be destroyed and grid secondary graphics 102(refer to Fig. 1).Further,
Described first preset value can be passed through, adjust quantity and the size of the secondary graphics of follow-up final reservation, thus to secondary graphics
The light transmittance of density and mask plate is adjusted.Described first preset value is the biggest, and the size of the secondary graphics ultimately formed is more
Greatly, the light transmittance of mask plate is the biggest.
The size of described first preset value is 0～100nm.
Refer to Fig. 5, remove described 4th figure 400(and refer to Fig. 4) in part the 4th spirte that can not expose,
Forming the 5th figure 500, described 5th figure 500 is as the secondary graphics needing addition in current layer figure.
The method removing part the 4th spirte 401 that can not expose in described 4th figure 400 includes: remove described
In 4th figure, length or width are less than part the 4th spirte of the second preset value.Also include: be smaller than the 3rd by adjacent
Adjacent 4th spirte of preset value merges.
Remove length or width in described 4th figure to include less than the method for part the 4th spirte of the second preset value:
Keep the 4th spirte 401(with reference to Fig. 4) center constant, the length and width of all 4th spirtes 401 is all contracted
Little second preset value, part the 4th spirte disappears；Then the length and width of the 4th spirte after remaining reducing is increased
Big second preset value, makes remaining 4th spirte recover to original size.
Described second preset value is the minimum graphic width that the current layer spirte in current layer figure can expose.By described
In 4th figure, length and width is removed less than the figure of described second preset value, is present to ensure that in the 5th figure of formation
5th spirte is all can exposure figure.
Described second preset value is in the range of 20nm～160nm.
Except removing the figure that can not expose in the 4th figure, in addition it is also necessary to remove in described 4th figure and can not expose formation
Adjacent pattern between spacing.
Concrete, the method that adjacent adjacent 4th spirte 401 being smaller than the 3rd preset value merges is included: keep
The center of the 4th spirte 401 is constant, and the length and width of the 4th spirte 401 is all increased the 3rd preset value, part
The adjacent spacing between the 4th spirte 401 will disappear so that adjacent described 4th spirte 401 merges, and forms one
Individual larger-size figure, then will increase after the 4th spirte length and width reduce the 3rd preset value, make chi after merging
Very little bigger dimension of picture reduces.
Described 3rd preset value is the minimum pattern pitch that can expose in current layer figure.
Described 3rd preset value is in the range of 20nm～36nm.
In the present embodiment, first remove length or width in described 4th figure and be less than part the 4th subgraph of the second preset value
Shape, more adjacent adjacent 4th spirte being smaller than the 3rd preset value is merged.By the 5th figure formed after above-mentioned process
Shape 500 includes the 5th spirte 501, and described 5th spirte 501 is the part that in the 4th figure 400, length and width is the biggest
4th spirte.
In other embodiments of the invention, it is also possible to first by adjacent adjacent 4th subgraph being smaller than the 3rd preset value
Shape merges, then removes length or width part the 4th spirte less than the second preset value.Due to first by part the 4th spirte
Merge, cause becoming large-sized of part original size part the 4th spirte less than the second preset value to be preset to more than second
Value, in the 5th figure ultimately formed, the quantity of the 5th spirte can be more, is more conducive to improve the light transmittance of mask pattern.
Described 5th spirte is as needing the secondary graphics of addition in current layer figure.
Refer to Fig. 6, refer to Fig. 5 for described 5th figure 500() refer to Fig. 1 with the first figure 100() overlapping
Figure 600.
Owing to, in the present embodiment, current layer figure originally is blank figure, so, current layer figure adds the 5th
After figure, described current layer figure only has the 5th spirte 501.From fig. 6 it can be seen that at the 5th figure and the first figure
In the overlapping figure of shape, the described position of the 5th spirte 501 is auxiliary with the active area secondary graphics 101 in the first figure and grid
Help and between figure 102, there is no overlap, and described 5th spirte 501 is transparent figure, so, with described 5th spirte
510 add in current layer figure as secondary graphics, can improve the light transmittance of the mask plate of current layer figure, and will not damage
The figure of bad lower floor.Additionally by the size controlling described 5th spirte, it is also possible to adjust the light transmittance of the mask plate formed
And pattern density.
In another embodiment of the present invention, also provide for the forming method of a kind of secondary graphics.
Refer to Fig. 7, it is provided that lower floor's figure, described lower floor figure is the first figure 110.
Described first figure 110 is the figure in main graphic region.In the present embodiment, described first figure 110 includes active
District's figure 111, polysilicon graphics 112.In other embodiments of the invention, described first figure 110 can also include other
The spirte of type.
Refer to Fig. 8, it is provided that current layer figure, described current layer figure includes some current layer spirtes 121, by institute
State lower floor's figure and current layer graphics overlay, form second graph 210.
Described second graph 210 includes the active area figure 111 in the first figure, polysilicon graphics 112 and current
Current layer spirte 121 in layer pattern, the spirte in described first figure and the equal conduct of spirte in current layer figure
The second spirte in second graph 200.
Spirte in described current layer figure is transmission region, has cut-out polysilicon graphics 120 and removes scattering
The effect of figure.Described current layer figure is positioned at the top of the first figure.
The position of the spirte in described second graph 210 can not be with the follow-up secondary graphics added in current layer figure
Position have overlap, it is to avoid described secondary graphics destroys the spirte in current layer spirte and lower floor's figure, to device
Performance impacts.
Refer to Fig. 9, described second graph 210(be refer to Fig. 8) negate, it is thus achieved that the 3rd figure 310, described 3rd figure
Shape 310 and second graph 210 are complementary graph, and described 3rd figure 310 includes some 3rd spirtes 311.
Refer to Figure 10, keep described 3rd spirte 311(to refer to Fig. 9) center constant, by the described 3rd
The dimensions length of spirte (refer to Fig. 9) and width all reduce the first preset value, form the 4th figure 410, described 4th figure
Shape 410 includes some 4th spirtes 411.
Follow-up part the 4th spirte 411 chosen in described 4th figure 410 is using interpolation in current layer figure
Secondary graphics.
The size of described first preset value is 0～100nm.In the present embodiment, described first preset value is 50nm.
In 3rd figure 310, the length of part the 3rd spirte or width dimensions are less than described first preset value, so,
After the dimensions length of described 3rd spirte (refer to Fig. 9) and width are all reduced the first preset value, part the 3rd spirte
Can disappear, the quantity of the 4th spirte 411 in the 4th figure 410 formed is less than the 3rd subgraph in the 3rd figure 310
The quantity of shape 311.
Refer to Figure 11, remove described 4th figure 410(and refer to Figure 10) in part the 4th subgraph that can not expose
Shape 411(refer to Figure 10), form the 5th figure 510, described 5th figure 510 is as needing the auxiliary of addition in current layer figure
Figure, described 5th figure 510 is helped to include some 5th spirtes 511.
The method of part the 4th spirte 411 that can not expose described in Qu Chuing includes: remove length in described 4th figure
Or width is less than part the 4th spirte of the second preset value.Also include: be smaller than adjacent the of the 3rd preset value by adjacent
Four spirtes merge.
Concrete operation method is identical with a upper embodiment, and therefore not to repeat here.Figure due to described 4th spirte 411
Shape size is more than the second preset value, and the spacing between adjacent pattern is more than the 3rd preset value, so, in the present embodiment, described the
Five figures 510 are identical with the 4th figure 410.
Refer to Figure 12, refer to Figure 11 for described 5th figure 510() with second graph 210(refer to Fig. 7) weight
Folded figure 610.
Described 5th spirte 511 is same layer figure with current layer spirte 121, described 5th spirte 511 conduct
Secondary graphics in current layer figure, and described 5th spirte 511 and the spirte 111 in described first figure and work as
The position of front layer spirte 121 does not has lap.And described 5th spirte 501 is transparent figure, so, with described
Five spirtes 510 add the light transmittance of the mask plate that can improve current layer figure in current layer figure as secondary graphics, and
And the figure of lower floor will not be damaged.Additionally by the size controlling described 5th spirte, it is also possible to adjust the mask plate formed
Light transmittance and pattern density.
As described in the background art, in prior art, and it is difficult to the exposure targeted graphical during second graphical
Carry out etching deviation accurately to compensate.
The size of all spirtes in exposure targeted graphical can be increased a fixing constant value, it is ensured that second
In patterning process, it is possible to the figure that will be formed in the first patterning process needs the part removed remove completely.But this
Sample can cause the size of the part to the figure excision formed in the first patterning process more than design load, and with design load
Deviation is relatively big, thus device performance is caused large effect.
Embodiments of the invention additionally provide a kind of forming method exposing targeted graphical, for the first figure and the second figure
Diverse location between the spirte of shape, is respectively adopted different methods and compensates, thus to the son in the second mask pattern
Figure carries out etching deviation accurately and compensates.
Refer to Figure 13, it is provided that lower floor exposes targeted graphical and treats correction pattern, and described lower floor targeted graphical includes some
First lower floor's spirte of strip, described in treat that correction pattern includes some first positive spirtes to be repaired, described lower floor is exposed
Optical target figure and graphics overlay to be revised, form overlapping figure, described in pattern bit to be revised expose on targeted graphical in lower floor
Side, has lap between part first positive spirte to be repaired and part the first lower floor spirte.In Figure 13, same filling class
The spirte of type is same figure.
Described lower floor exposure targeted graphical is the exposure targeted graphical of the first patterning process of Dual graphing process, bag
Include first lower floor's spirte 701 of some strips；In the present embodiment, described lower floor exposure targeted graphical is first graphically to carve
The exposure targeted graphical of erosion polysilicon layer.
Described treat that correction pattern is the exposure targeted graphical during the second graphical during Dual graphing, described
Treat that correction pattern includes the first positive spirte 801 to be repaired of some strips.In the present embodiment, described first positive subgraph to be repaired
Shape 801 is also strip figure, and for cutting the lower floor's spirte 701 in described lower floor exposure targeted graphical, described first treats
Revising spirte 801 is removed figure in transparent figure, i.e. photoresist layer.
Described pattern bit to be revised exposes above targeted graphical in lower floor, part first positive spirte 801 to be repaired and part
Between first lower floor's spirte 701, there is lap, such that it is able to graphically formed first during second graphical
Strip polysilicon graphics in separated.
Refer to table 1, set up photoetching resolution restriction table, described photoetching resolution restriction table includes can exposure area and not
Can exposure area.
The method for building up of described photoetching resolution restriction table includes: provide mask pattern, if having on described mask pattern
Dry different in width and the spirte of spacing, described spirte is the lightproof area of mask pattern；Described mask pattern is exposed
Light, obtains exposure figure, and described exposure figure includes some exposure spirtes；Width and adjacent exposure with described exposure spirte
Spacing between light spirte, respectively as abscissa and vertical coordinate, sets up photoetching resolution restriction table, described exposure spirte
Width, spacing between described exposure spirte and adjacent spirte be positioned at exposing in described photoetching resolution restriction table
Light region, and the size area of the exposure figure that remaining is not formed be in photoetching resolution restriction table can not exposure area.Institute
Stating exposure figure is the figure retained on photoresist layer.
The width range of the exposure spirte that described photoetching resolution restriction table uses is 60nm～6000nm, adjacent exposure
Spacing between spirte is 60nm～300nm.
What described photoetching resolution limited table can exposure area and can not the photoetching of scope and photoetching equipment of exposure area
Resolution is correlated with, the highest described photoetching resolution of resolution of board limit in table can the scope of exposure area the biggest.Further,
Described photoetching resolution limit table can exposure area scope also to exposure spirte length relevant, length is the least, can expose
Region the biggest.
In the present embodiment, according to actual photoetching equipment, said method is used to set up photoetching resolution restriction table.According to institute
Stating exposure figure, the spacing between the width and adjacent exposure spirte of described exposure spirte is as abscissa and indulges
Coordinate, sets up photoetching resolution restriction table according to exposure results, refer to table 1.
Table 1 photoetching resolution limits table
In the present embodiment, the photoetching resolution shown in table 1 limits in table, and the width of exposure spirte is L1, adjacent exposure
Width between spirte is S1, and wherein, L1 is in the range of 80nm～350nm, and S1 is in the range of 60nm～200nm.At this
In other bright embodiments, it is also possible to set up scope of data wider, the first finer photoetching resolution limits table.
In table 1, numeral " 1 " representative " can expose ", and digital " 0 " represents " can not expose ".As can be seen from Table 1, along with
Become larger away from S1, and width L1 tapers into, can not gradually become can exposure area in exposure area.
Please continue to refer to Figure 13, limit table according to described photoetching resolution, keep in described first positive spirte to be repaired
Heart invariant position, to there being the size of overlapping part first positive spirte to be repaired to be modified with first lower floor's spirte, is formed
First revises spirte, make described first revise spirte enter can exposure area, and be positioned at can in exposure area with can not
Immediate position, exposure area.
Described first positive spirte 801a to be repaired has width S, described width S be first lower floor's spirte 701 need by
Remove the width than part.Described first positive spirte 801a to be repaired treats the spacing between correction pattern 801b with adjacent first
For L.
Width S according to described first positive spirte 801a to be repaired and spacing L, find described first positive spirte to be repaired
801a position in described photoetching resolution limits table.Owing to described first positive spirte 801a to be repaired is transparent figure, i.e.
Removed part in photoresist layer, so, described width S correspondence photoetching resolution limit the adjacent exposure spirte in table it
Between interval S 1, and described spacing L correspondence photoetching resolution limits the width L1 of the exposure spirte in table.
In the present embodiment, the width S of described first positive spirte 801a to be repaired is 70nm, and spacing L is 100nm, just position
Photoetching resolution in table 1 limit in table can exposure area, and be positioned at can exposure area with can not the facing of exposure area
Position, boundary.So need not described first positive spirte 801a to be repaired is modified.
In other embodiments of the invention, the width S of described first positive spirte 801a to be repaired can be 80nm, and
Can be 100nm away from L, the most described first positive spirte 801a to be repaired be similarly positioned in exposing in described photoetching resolution restriction table
Light region, but be not at described can exposure area and now can not can reduce described width at the critical localisation of exposure area
Degree S still can keep that described first positive spirte 801a to be repaired is positioned in described photoetching resolution table can exposure area, example
As, the width of described positive spirte 801a to be repaired is decreased to 70nm, makes described first positive spirte 801a to be repaired be positioned at and can expose
Light region and can not be at the critical localisation of exposure area.
In other embodiments of the invention, described first positive spirte 801a to be repaired is also possible to be positioned at described photoetching resolution
Rate limit in table can not exposure area, the width S of described first positive spirte 801a to be repaired can be increased, form the first correction
Spirte, make described first revise spirte enter can exposure area, and, be positioned at described can exposure area and can not exposure region
At the critical localisation in territory.
By above-mentioned process, on the one hand may insure that described first revise spirte be positioned at can exposure area, can pass through
Exposure realizes；On the other hand, described first revise spirte be positioned at can exposure area and can not at the critical localisation of exposure area,
The width of described first positive spirte to be repaired is the minima meeting conditions of exposure, to first lower floor's spirte 701
The size removed is minimum, makes the size of the etched features ultimately formed identical with design load or deviates less, it is to avoid affecting shape
The performance of the semiconductor device become, such as, in the present embodiment, can make the gate end of formation keep enough with channel region
Distance.
Refer to Figure 15, described lower floor exposes and also includes some second lower floor's spirtes 702 in targeted graphical, and described second
Lower floor's spirte 702 includes plural strip part 712 the most on the same line, and connects described strip
The coupling part of part.
The follow-up etched features needing to be removed described coupling part by second graphical step.
Refer to Figure 16, described in treat that correction pattern includes the second positive spirte 802 to be repaired, described lower floor expose target
Figure and treat the overlapping figure of correction pattern, described second positive spirte 802 to be repaired covers described second lower floor's spirte 702
Coupling part 722, and be positioned at the part strip part 712 of both sides, described coupling part 722.
In order to guarantee in follow-up etching process, described coupling part 722 can be removed completely, described second
Positive spirte to be repaired is not only completely covered described coupling part 722, also covers the part strip of both sides, described coupling part 722
Part 712.
Hanging down between the length of side 812 and coupling part 722 that the second positive spirte 722 to be repaired intersects with strip part 721
Straight distance is the second size C, and the scope of described second size C can be 10nm～60nm, with guarantee described can be by described company
Connect part 722 to remove completely.Described second size C can be according to multiple etching Procedure Acquisition.Described second size C is by described
Coupling part 722 removes required minima completely.
Then according to the width S of described second positive spirte to be repaired ' and described second positive spirte to be repaired with adjacent
Treat the spacing between the spirte in correction pattern, it is judged that described second positive spirte 802 to be repaired limits table at photoetching resolution
Position in (table 1), described determination methods with before the first positive spirte 801a(to be repaired be refer to Figure 14) determination methods
Identical, therefore not to repeat here.
If described second positive spirte 802 to be repaired be positioned in described photoetching resolution restriction table can exposure area, and
And be positioned at described can in exposure area closest to can not the position of exposure area, be i.e. positioned at can exposure area with can not exposure area
Critical localisation, then need not described second positive spirte to be repaired is modified.
If described second positive spirte 802 to be repaired be positioned in described photoetching resolution restriction table can not exposure area,
Then need described second positive spirte to be repaired is modified, by increasing the width S of described second positive spirte to be repaired ' obtain
Second revises spirte, make described second revise spirte be positioned in exposure area closest to can not the position of exposure area, i.e.
Be positioned at can exposure area with can not the critical localisation of exposure area.The second correction spirte and the strip part phase ultimately formed
The length of side handed over, and the vertical dimension between coupling part is first size C ', first size C ' is more than the second size C.
If described second positive spirte 802 to be repaired be positioned in described photoetching resolution restriction table can exposure area, but
Be not described can exposure area with can not the critical localisation of exposure area, if described second positive spirte 802 to be repaired is entered
Row is revised, and needs to reduce the width S of described second positive spirte 802 to be repaired ', the second correction spirte and the strip ultimately formed
The length of side that shape part intersects, and the vertical dimension between coupling part is first size C ', first size C ' is less than the second size
C, so, described second positive spirte 802 to be repaired can be kept constant.
Use said method that the second positive spirte 802 to be repaired is modified, on the one hand, revised second can be made to repair
Positron figure be positioned at can exposure area, realization can be exposed on photoresist layer；On the other hand, described second correction spirte can
Coupling part 722 is removed completely during subsequent etching；Furthermore, it is also possible in the premise meeting above-mentioned two effect
Under, the size making the strip part 712 of removal is minimum, identical with design load or deviation is less, thus avoids described length
The performance of the semiconductor device at strip part 712 place impacts.
The most in other embodiments of the invention, described lower floor exposure targeted graphical can also including, some first dissipates
Penetrating spirte, described first is to scatter the strip figure that spirte is rectangle.
Described first scattering spirte, for regulating the pattern density in described lower floor exposure targeted graphical, increases and forms institute
State the lithographic process window of exposure targeted graphical.In the first patterning process, described the can be formed on material layer to be etched
One scattering spirte, needs, by second graphical process, to be removed by described second scattering spirte.So, treating correction map
Shape also includes the second scattering spirte corresponding with described first scattering spirte.
In overlapping figure, the second scattering spirte and the first scattering spirte are completely overlapped.In order to by described
One scattering spirte is removed completely, needs to be modified described second scattering spirte, makes revised second scattering subgraph
The size of shape is more than the size of described first scattering spirte.Described modification method may include that described second scattering of holding
The center of figure is constant, and the length and width of described second scattering spirte is increased the 4th preset value, after making increase
Second scattering spirte is completely covered the first scattering spirte.Described 4th preset value is in the range of 20nm～140nm.Described general
The size of described second scattering spirte increases the 4th preset value, both may insure that and can remove described first scattering subgraph completely
Shape, also requires not interfere with other figures in described lower floor figure.
In sum, the forming method of the exposure target of the present invention, limit table by photoetching resolution, it is ensured that revised
While exposure target figure can expose realization, it is ensured that the removed size of other partial graphical is minimum, can either be by lower floor's mesh
Mark on a map in shape first scattering spirte and other unwanted figures remove completely, avoid again to formed semiconductor device
Performance impact, cause the performance of described semiconductor device and design load to have bigger deviation.
Although present disclosure is as above, but the present invention is not limited to this.Any those skilled in the art, without departing from this
In the spirit and scope of invention, all can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
Limit in the range of standard.
Claims (11)
1. the forming method of a secondary graphics, it is characterised in that including:
Thering is provided lower floor's figure and current layer figure, described lower floor figure is the first figure, and described current layer figure includes some
Current layer spirte；
By described lower floor figure and current layer graphics overlay, form second graph；
Being negated by described second graph, it is thus achieved that the 3rd figure, described 3rd figure and second graph are complementary graph, the described 3rd
Figure includes some 3rd spirtes；
The center keeping described 3rd spirte is constant, and dimensions length and the width of described 3rd spirte are all reduced
One preset value, forms the 4th figure, and described 4th figure includes some 4th spirtes；
Removing part the 4th spirte that can not expose in described 4th figure, form the 5th figure, described 5th figure is made
Secondary graphics for current layer figure.
The forming method of secondary graphics the most according to claim 1, it is characterised in that described first preset value in the range of
0nm～100nm.
The forming method of secondary graphics the most according to claim 1, it is characterised in that remove in described 4th figure not
The method of part the 4th spirte that can expose includes: removes length or width in described 4th figure and is less than the second preset value
Part the 4th spirte.
The forming method of secondary graphics the most according to claim 3, it is characterised in that remove length in described 4th figure
Or width includes less than the method for part the 4th spirte of the second preset value: the center keeping the 4th spirte is constant,
The length and width of all 4th spirtes all reduces the second preset value, and part the 4th spirte disappears；Then by remaining
The length and width of the 4th spirte after reducing increases the second preset value, makes remaining part the 4th spirte recover to originally
Size.
The forming method of secondary graphics the most according to claim 3, it is characterised in that described second preset value is current layer
The minimum graphic width that current layer spirte in figure can expose.
The forming method of secondary graphics the most according to claim 5, it is characterised in that described second preset value in the range of
20nm～160nm.
The forming method of secondary graphics the most according to claim 3, it is characterised in that removing can not in described 4th figure
4th spirte of exposure, the method forming the 5th figure also includes: be smaller than the adjacent 4th of the 3rd preset value by adjacent
Spirte merges.
The forming method of secondary graphics the most according to claim 7, it is characterised in that be smaller than the 3rd preset adjacent
The method that adjacent 4th spirte of value merges includes: the center keeping the 4th spirte is constant, by the 4th spirte
Length and width increases the 3rd preset value, and the spacing between the 4th spirte that part is adjacent disappears, the 4th adjacent spirte
Merge, then will increase after the 4th spirte length and width reduce the 3rd preset value.
The forming method of secondary graphics the most according to claim 7, it is characterised in that described 3rd preset value is current layer
The minimum pattern pitch that can expose in figure.
The forming method of secondary graphics the most according to claim 9, it is characterised in that the scope of described 3rd preset value
For 20nm～36nm.
The forming method of 11. secondary graphics according to claim 7, it is characterised in that can first remove described 4th figure
In shape, length or width are less than part the 4th spirte of the second preset value, then are smaller than the adjacent of the 3rd preset value by adjacent
4th spirte merges；Or first adjacent adjacent 4th spirte being smaller than the 3rd preset value is merged, then remove length
Or width is less than part the 4th spirte of the second preset value.
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| CN106328506B (en) * | 2016-08-31 | 2020-04-10 | 上海华力微电子有限公司 | Method for reducing photoresist stripping risk of ion implantation layer |
| CN109669319B (en) * | 2018-12-19 | 2022-06-14 | 上海华力集成电路制造有限公司 | OPC correction method for improving line end size uniformity of polycrystalline silicon layer |
| CN110058485B (en) * | 2019-05-09 | 2022-04-22 | 上海华力微电子有限公司 | OPC correction method and OPC correction system |
| CN113075856B (en) * | 2020-01-06 | 2024-06-18 | 中芯国际集成电路制造(上海)有限公司 | Mask pattern, mask and method for forming semiconductor structure |
| CN113109992B (en) * | 2020-01-10 | 2022-07-19 | 中芯国际集成电路制造(北京)有限公司 | Pattern correction method and mask manufacturing method |
| CN114167681A (en) * | 2020-09-10 | 2022-03-11 | 中芯国际集成电路制造(上海)有限公司 | Defect detection method, mask making method and semiconductor structure forming method |
| CN112987487B (en) * | 2021-02-22 | 2024-03-08 | 上海华力集成电路制造有限公司 | OPC correction method for graph structure with different graph density ends |
| CN115145111A (en) * | 2021-03-30 | 2022-10-04 | 中芯国际集成电路制造(上海)有限公司 | Pattern design method and system, mask combination, equipment and storage medium |
| CN114415466B (en) * | 2022-03-29 | 2022-07-08 | 合肥晶合集成电路股份有限公司 | Method and system for correcting layout graph |
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