CN104724758B - A kind of WO3The preparation method of nanoscale twins material - Google Patents
A kind of WO3The preparation method of nanoscale twins material Download PDFInfo
- Publication number
- CN104724758B CN104724758B CN201510101103.1A CN201510101103A CN104724758B CN 104724758 B CN104724758 B CN 104724758B CN 201510101103 A CN201510101103 A CN 201510101103A CN 104724758 B CN104724758 B CN 104724758B
- Authority
- CN
- China
- Prior art keywords
- solution
- reaction
- preparation
- substrate
- deionized water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000002135 nanosheet Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 6
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 238000006243 chemical reaction Methods 0.000 claims description 17
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 13
- 239000008367 deionised water Substances 0.000 claims description 12
- 229910021641 deionized water Inorganic materials 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 9
- 239000002243 precursor Substances 0.000 claims description 7
- 239000011734 sodium Substances 0.000 claims description 6
- 235000006408 oxalic acid Nutrition 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 3
- -1 polytetrafluoroethylene Polymers 0.000 claims description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 2
- 239000000843 powder Substances 0.000 claims description 2
- 230000001699 photocatalysis Effects 0.000 abstract 1
- 238000007146 photocatalysis Methods 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 22
- 239000002086 nanomaterial Substances 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000005660 hydrophilic surface Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006303 photolysis reaction Methods 0.000 description 1
- 230000015843 photosynthesis, light reaction Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052938 sodium sulfate Inorganic materials 0.000 description 1
- 235000011152 sodium sulphate Nutrition 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G41/00—Compounds of tungsten
- C01G41/02—Oxides; Hydroxides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/30—Particle morphology extending in three dimensions
- C01P2004/32—Spheres
- C01P2004/36—Spheres fragmented
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Composite Materials (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Hybrid Cells (AREA)
Abstract
本发明公开了属于纳米材料制备技术领域的一种多纳米片层WO3阵列材料的制备方法。本发明的方法直接用导电玻璃为衬底,采用钨酸钠为钨源,控制溶液在一定pH值条件下,利用一步水热法合成WO3纳米片层阵列材料。本发明方法简单安全,制备成本低,易于控制;制备出的纳米阵列形貌均一,且直接生长于FTO 衬底上,可与导电基底形成更好的导电通道,在太阳能电池领域及光催化领域将有更广阔的应用前景,同时也是制备电致变色薄膜、光致变色薄膜、气敏传感器的理想材料。
The invention discloses a preparation method of a multi-nano sheet WO 3 array material, which belongs to the technical field of preparation of nanometer materials. The method of the present invention directly uses conductive glass as a substrate, uses sodium tungstate as a tungsten source, controls the solution under a certain pH value condition, and utilizes a one-step hydrothermal method to synthesize WO 3 nano sheet array material. The method of the present invention is simple and safe, has low preparation cost and is easy to control; the prepared nano-array has uniform morphology and is directly grown on the FTO substrate, which can form a better conductive channel with the conductive substrate, and is used in the field of solar cells and photocatalysis It will have broader application prospects, and it is also an ideal material for preparing electrochromic films, photochromic films, and gas sensors.
Description
技术领域:Technical field:
本发明属于纳米材料制备技术领域,特别涉及一种一种WO3纳米片层材料的制备方法。该材料在光催化降解、光解水制氢、制备太阳能电池电极、电致变色薄膜、光致变色薄膜、气敏传感器等方面具有广泛的应用前景。The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a preparation method of WO3 nanosheet material. The material has broad application prospects in photocatalytic degradation, photolysis of water to produce hydrogen, preparation of solar cell electrodes, electrochromic thin films, photochromic thin films, and gas sensors.
背景技术:Background technique:
WO3是一种重要的半导体材料,在光致变色、电致变色、光催化降解、气敏元件、太阳能电池等方面具有广泛应用,作为典型的n型半导体一直备受关注。这些方面的性能在很大程度上取决于WO3纳米结构单元的尺寸、形貌及其组装的纳米结构,正是由于材料的结构在其性能中的决定性作用。WO 3 is an important semiconductor material, which has a wide range of applications in photochromism, electrochromism, photocatalytic degradation, gas sensor, solar cell, etc. It has attracted much attention as a typical n-type semiconductor. The performance in these aspects depends largely on the size, morphology of WO 3 nanostructure units and their assembled nanostructures, precisely because the structure of the material plays a decisive role in its performance.
WO3纳米阵列制备方法有很多,文献中报道的有热蒸发法、溶胶凝胶制备法、化学方法等。热蒸发法需要900~1000℃的高温,生长工艺条件苛刻,设备要求高,可重复性差;溶胶凝胶制备法制备过程简单,但直接在基底材料上生长的报道较少,且很难得到阵列有序的纳米结构;化学方法在基底表面生长的纳米结构附着力较弱,从而限制其应用;而本方法使用的一步水热法较为简单,设备要求低,产物纯净,可重复性好也适合大规模生产,可以直接在导电玻璃基地上生长有序的WO3纳米片层阵列。There are many methods for preparing WO 3 nanoarrays, including thermal evaporation, sol-gel preparation, and chemical methods reported in the literature. The thermal evaporation method requires a high temperature of 900-1000 °C, the growth process conditions are harsh, the equipment requirements are high, and the repeatability is poor; the sol-gel preparation method has a simple preparation process, but there are few reports on direct growth on the substrate material, and it is difficult to obtain arrays. Ordered nanostructures; the adhesion of nanostructures grown on the surface of the substrate by chemical methods is weak, which limits its application; while the one-step hydrothermal method used in this method is relatively simple, requires low equipment, and the product is pure and reproducible. For large-scale production, ordered arrays of WO 3 nanosheets can be grown directly on conductive glass substrates.
WO3纳米片层阵列材料与普通WO3材料相比具有更大的优势。首先,WO3纳米片层阵列具有较大的比表面积,能为粒子之间提供更多的电接触,增加了电子传输速率,提高了催化活性。其次,WO3纳米片层阵列致密有序,避免了普通WO3材料内部较多的缺陷,减少复合。另外,本方法制备的WO3纳米片层阵列直接在FTO上生长出来的,与导电基底的接触更好,电子注入和传输速率更快,因而提高材料的性能。因此,多纳米片层WO3阵列材料具有很广阔的应用前景。Compared with ordinary WO 3 materials, WO 3 nanosheet array materials have greater advantages. First, the WO 3 nanosheet array has a larger specific surface area, which can provide more electrical contacts between particles, increase the electron transport rate, and improve the catalytic activity. Secondly, the WO 3 nanosheet array is dense and orderly, which avoids many defects inside ordinary WO 3 materials and reduces recombination. In addition, the WO 3 nanosheet array prepared by this method is directly grown on the FTO, which has better contact with the conductive substrate, faster electron injection and transmission rates, and thus improves the performance of the material. Therefore, multi-nanosheet WO 3 array materials have broad application prospects.
发明内容:Invention content:
本发明在于提供一种多纳米片层WO3阵列材料的制备方法。The invention aims to provide a method for preparing a multi-nanometer sheet WO 3 array material.
一种多纳米片层WO3阵列材料的制备方法,是采用一步简单的水热法,将FTO作为生长衬底,以Na2WO4·2H2O为原料,草酸和(NH4)2SO4为稳定剂,然后滴加HNO3调控前驱溶液pH值为1~1.5。该方法的具体步骤如下:A preparation method of multi-nanosheet WO 3 array material is a simple one-step hydrothermal method, using FTO as a growth substrate, using Na 2 WO 4 ·2H 2 O as raw materials, oxalic acid and (NH 4 ) 2 SO 4 is a stabilizer, and then HNO 3 is added dropwise to adjust the pH value of the precursor solution to 1-1.5. The concrete steps of this method are as follows:
(1)清洗导电玻璃衬底,去除导电玻璃衬底表面沾污层,得到清洁的导电玻璃衬底,UV紫外灯下臭氧处理15~30分钟,形成亲水表面,然后置于干燥箱中进行60℃干燥处理;(1) Clean the conductive glass substrate, remove the stained layer on the surface of the conductive glass substrate, and obtain a clean conductive glass substrate, treat it with ozone under a UV lamp for 15 to 30 minutes to form a hydrophilic surface, and then place it in a drying oven Drying at 60°C;
(2)按照去离子水和16mol/LHNO3溶液的体积比为1:1配制HNO3反应液a;(2) according to the volume ratio of deionized water and 16mol/LHNO3 solution is 1: 1 preparation HNO3 reaction solution a;
(3)将Na2WO4·2H2O粉末加入去离子水中,配置成物质的量浓度为0.023~0.024mol/L的钨酸钠溶液;(3) Add Na 2 WO 4 ·2H 2 O powder into deionized water to form a sodium tungstate solution with a concentration of 0.023-0.024mol/L;
(4)在步骤(3)所得溶液中滴加HNO3反应液a以调控钨酸钠溶液的pH值至1~1.5;( 4 ) Adding HNO3reaction solution a dropwise to the solution obtained in step (3) to regulate the pH value of the sodium tungstate solution to 1~1.5;
(5)将与Na2WO4·2H2O摩尔投料比例为1:10~1:40的草酸以及1:3~1:6的(NH4)2SO4分别加入步骤(4)中所得溶液中,充分搅拌获得最终反应前驱溶液;(5) Add oxalic acid with a molar ratio of 1:10 to 1:40 to Na 2 WO 4 ·2H 2 O and (NH 4 ) 2 SO 4 with a molar ratio of 1:3 to 1:6 to the obtained product in step (4). solution, fully stirred to obtain the final reaction precursor solution;
(6)将步骤(1)中的导电玻璃衬底放置于内衬为聚四氟乙烯的高压反应釜中,并注入步骤(5)所得前驱溶液,采用水热合成反应法,保持180℃反应8小时,然后自然冷却至室温;(6) Place the conductive glass substrate in step (1) in a high-pressure reactor lined with polytetrafluoroethylene, and inject the precursor solution obtained in step (5), and use the hydrothermal synthesis reaction method to maintain the reaction at 180 °C 8 hours, then naturally cooled to room temperature;
(7)反应结束后将导电玻璃取出,分别用去离子水和无水乙醇反复清洗至中性,然后于干燥箱中进行60℃干燥处理,即获得多纳米片层WO3阵列材料。(7) After the reaction, the conductive glass was taken out, washed repeatedly with deionized water and absolute ethanol until neutral, and then dried in a drying oven at 60°C to obtain the multi-nanosheet WO 3 array material.
整个反应过程的的化学反应式可以表示如下:The chemical reaction formula of the whole reaction process can be expressed as follows:
Na2WO4+2H+→H2WO4+2Na+ Na 2 WO 4 +2H + →H 2 WO 4 +2Na +
H2WO4→WO3+H2OH 2 WO 4 →WO 3 +H 2 O
本发明具有如下优点:The present invention has the following advantages:
本发明的方法制作工艺简单,制备出的WO3纳米阵列形貌均匀、尺寸一致,且直接生长于FTO衬底上,与导电基底形成更好的导电通道,更利于电子的传输。The method of the invention has a simple manufacturing process, and the prepared WO 3 nanometer array has uniform appearance and consistent size, and is directly grown on the FTO substrate to form a better conductive channel with the conductive substrate, which is more conducive to electron transmission.
附图说明:Description of drawings:
图1是多纳米片层WO3阵列材料的扫描电镜图Figure 1 is a scanning electron microscope image of the multi-nanosheet WO 3 array material
具体实施方式:detailed description:
(1)清洗FTO衬底:利用丙酮超声清洗10min,然后用无水乙醇和去离子水超声清洗各20min。去除FTO表面沾污层,得到清洁的FTO衬底,UV紫外灯下臭氧处理15分钟,然后放入干燥箱中进行60℃干燥处理。所用超纯水电阻率需在16Ω·cm以上;(1) Clean the FTO substrate: use acetone to ultrasonically clean for 10 minutes, then use absolute ethanol and deionized water to ultrasonically clean for 20 minutes each. Remove the contamination layer on the FTO surface to obtain a clean FTO substrate, treat it with ozone under a UV lamp for 15 minutes, and then put it in a drying oven for drying at 60°C. The resistivity of the ultrapure water used must be above 16Ω·cm;
(2)分别量取去离子水和16mol/L的HNO3溶液各20ml放入50ml烧杯中,磁力搅拌10min均匀分散后得到澄清反应液a;(2) Measure 20ml each of deionized water and 16mol/L HNO3 solution into a 50ml beaker, stir magnetically for 10min and evenly disperse to obtain clear reaction solution a;
(3)量取30ml去离子水放入100ml烧杯中,并用电子天平称取0.231g的NaWO3·2H2O加入到去离子水中,磁力搅拌10min至充分溶解;(3) Measure 30ml of deionized water into a 100ml beaker, weigh 0.231g of NaWO 3 2H 2 O with an electronic balance, add it to the deionized water, and stir magnetically for 10 minutes until fully dissolved;
(4)使用pH计监测步骤(3)中溶液的pH,并缓慢滴加反应液a,直至溶液pH在1~1.5范围内,此时溶液产生黄色沉淀;(4) Use a pH meter to monitor the pH of the solution in step (3), and slowly add the reaction solution a dropwise until the pH of the solution is in the range of 1 to 1.5, at which time the solution produces a yellow precipitate;
(5)用电子天平称取1.26g的草酸加入到上述溶液中,磁力搅拌5min,再用电子天平称取0.32g的(NH4)2·SO4加入到溶液中,磁力搅拌10min至沉淀溶解;(5) Add 1.26g of oxalic acid to the above solution with an electronic balance, stir magnetically for 5 minutes, then weigh 0.32g (NH 4 ) 2 SO 4 with an electronic balance, add it to the solution, and stir magnetically for 10 minutes until the precipitate dissolves ;
(6)将去离子水加入到沉淀溶解后的溶液,并将溶液定容至70ml,充分均匀搅拌获得反应前驱溶液;(6) Add deionized water to the solution after the precipitation is dissolved, and set the volume of the solution to 70ml, and stir fully and evenly to obtain the reaction precursor solution;
(7)将步骤(1)中的导电玻璃直立固定放入内衬为聚四氟乙烯的50ml高压反应釜中,取步骤(6)中前驱溶液40ml缓慢注入高压反应釜中,180℃反应8小时,然后自然冷却至室温;(7) Put the conductive glass in step (1) upright into a 50ml autoclave lined with polytetrafluoroethylene, take 40ml of the precursor solution in step (6) and slowly inject it into the autoclave, and react at 180°C for 8 hours, then naturally cooled to room temperature;
(8)取出FTO,将反应后的沉淀于FTO上的残留物用去离子水及无水乙醇冲洗干净,在FTO玻璃上可见一层淡黄色的氧化钨膜,然后在60℃干燥箱中进行干燥处理6小时,即在FTO上制得多纳米片层WO3阵列材料。加入的草酸和钨酸形成了络合物,因而抑制了沉淀的产生,加入的硫酸钠促进了WO3向阵列方向生长。所制得的WO3纳米片阵列材料如图1所示。(8) Take out the FTO, rinse the residue deposited on the FTO after the reaction with deionized water and absolute ethanol, a layer of light yellow tungsten oxide film can be seen on the FTO glass, and then carry out the reaction in a 60°C drying oven. After drying for 6 hours, the multi-nanosheet WO 3 array material was prepared on the FTO. The added oxalic acid and tungstic acid formed a complex, thus inhibiting the precipitation, and the added sodium sulfate promoted the growth of WO 3 towards the array. The prepared WO 3 nanosheet array material is shown in Fig. 1 .
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510101103.1A CN104724758B (en) | 2015-03-06 | 2015-03-06 | A kind of WO3The preparation method of nanoscale twins material |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510101103.1A CN104724758B (en) | 2015-03-06 | 2015-03-06 | A kind of WO3The preparation method of nanoscale twins material |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104724758A CN104724758A (en) | 2015-06-24 |
CN104724758B true CN104724758B (en) | 2017-07-07 |
Family
ID=53449262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510101103.1A Active CN104724758B (en) | 2015-03-06 | 2015-03-06 | A kind of WO3The preparation method of nanoscale twins material |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104724758B (en) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105384358B (en) * | 2015-10-29 | 2017-09-15 | 上海交通大学 | A kind of WO3Nano-chip arrays method for manufacturing thin film and its application study |
CN105388138B (en) * | 2015-12-23 | 2018-01-30 | 哈尔滨工业大学 | It is a kind of based on measuring method of the tungsten oxide as alcohol gas sensing material |
CN105836807B (en) * | 2016-06-01 | 2017-08-18 | 武汉工程大学 | A two-dimensional sheet self-assembled multi-level structure tungsten oxide and its preparation method and application |
CN106222685B (en) * | 2016-08-22 | 2018-08-07 | 南京航空航天大学 | A kind of WO of photoelectrocatalysis water decomposition3The preparation method of-LDH laminated films |
CN106532070B (en) * | 2016-09-28 | 2019-04-09 | 浙江工业大学 | Preparation method of WN | WC of porous heterogeneous interface |
CN106698972B (en) * | 2016-12-22 | 2019-04-05 | 北京工业大学 | A kind of electro-conductive glass matrix tungsten oxide film material preparation method |
CN107435281A (en) * | 2017-09-04 | 2017-12-05 | 济南大学 | A kind of preparation method of paper substrate two dimension tungstic trioxide nano-slice |
CN107827159A (en) * | 2017-11-14 | 2018-03-23 | 中国科学院上海硅酸盐研究所 | A kind of method of citric acid auxiliary one-step synthesis method tungstic acid electrochromic material |
CN107936624A (en) * | 2017-12-04 | 2018-04-20 | 瑞彩科技股份有限公司 | A kind of pearlescent pigment of surface cladding tungstic acid and preparation method thereof |
CN108314085B (en) * | 2018-02-06 | 2019-11-01 | 厦门大学 | The preparation method of tungstic trioxide nano-slice complex light anode |
CN110066117B (en) * | 2019-05-13 | 2022-03-01 | 扬州大学 | Novel self-connection SnO2Microsphere and preparation method and application thereof |
CN110054224A (en) * | 2019-05-30 | 2019-07-26 | 福州大学 | A kind of stratiform tungsten trioxide photoelectrode material and preparation method thereof |
CN110981213A (en) * | 2019-12-18 | 2020-04-10 | 济南大学 | Preparation method of crossed plate-shaped tungsten trioxide-ferric oxide composite material |
CN115043599A (en) * | 2022-07-07 | 2022-09-13 | 重庆第二师范学院 | A method for preparing ordered nano-flaky WO3 thin film by coating on the surface of dielectric |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101318703A (en) * | 2008-07-08 | 2008-12-10 | 清华大学 | A preparation method of tungsten oxide nanowire and tungsten oxide nanowire ammonia-sensitive sensor |
CN101798117B (en) * | 2010-03-24 | 2011-12-07 | 桂林理工大学 | Method for preparing highly ordered tungsten trioxide nano-rod |
CN102757095B (en) * | 2011-04-29 | 2013-12-11 | 北京化工大学 | Tungsten oxide nanoflake self-assembly nanosphere and preparation method and application of tungsten oxide nanoflake self-assembly nanosphere |
-
2015
- 2015-03-06 CN CN201510101103.1A patent/CN104724758B/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN104724758A (en) | 2015-06-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN104724758B (en) | A kind of WO3The preparation method of nanoscale twins material | |
CN105384358B (en) | A kind of WO3Nano-chip arrays method for manufacturing thin film and its application study | |
CN106591878B (en) | A kind of multilevel hierarchy ZnO Au ZIF-8 complex light electrodes being constructed and applying | |
Huo et al. | Core–shell TiO2@ Au25/TiO2 nanowire arrays photoanode for efficient photoelectrochemical full water splitting | |
CN102134092B (en) | Simple preparation method of hollow-spherical and flower-shaped indium oxide with secondary structure and application | |
CN103343364B (en) | A kind of method for preparing germanium nanocubic crystal by ionic liquid electrodeposition | |
CN105498773A (en) | Preparation method for doped iron oxide nanorod catalyst | |
CN104014355B (en) | A kind of nanometer sheet and particle composite structures visible light catalyst and preparation method thereof | |
CN105836807B (en) | A two-dimensional sheet self-assembled multi-level structure tungsten oxide and its preparation method and application | |
CN105780087B (en) | The preparation method of Electric oxidative synthesis 1-dimention nano oxide structure | |
CN107983327B (en) | Method for improving photocatalytic performance of ZnO nanorod array | |
CN106757055A (en) | A kind of method that hydro-thermal method prepares nanometer tube composite film light anode | |
CN104226335B (en) | A kind of multilevel hierarchy bismuth sulfide and its preparation method and application | |
CN107640784A (en) | A kind of nanocrystalline introducing defect method preparation technology of modifying titanium dioxide | |
CN101333672A (en) | A kind of electrochemical preparation method of highly oriented cuprous bromide semiconductor thin film | |
CN109095494B (en) | A kind of preparation method of cuprous oxide nanowire material | |
CN105837053A (en) | Titanium dioxide/polyaniline nano-composite structure and preparation method thereof | |
CN103073053B (en) | Method for directly synthesizing lead sulfide cube nano particle film | |
CN109972149B (en) | A kind of preparation method of Bi2Te3/Bi2O3/TiO2 ternary heterojunction film | |
CN102013327A (en) | Fluorinion-doped zinc oxide porous prism array film, and preparation and application thereof | |
CN102191038A (en) | A method for preparing CdTe quantum dots at low temperature in aqueous phase | |
CN108203839A (en) | g-C3N4/H-S-TiO2Based nanotube array and its preparation method and application | |
CN103613123A (en) | Method for preparing monodisperse stannic oxide nanocrystalline particles | |
CN103708544A (en) | One-step preparation method of mono-dispersed decahedral anatase titanium dioxide powder | |
CN104692466B (en) | A non-template method for preparing α-Fe2O3 hollow tubular nanofilms |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |