CN104715993B - Plasma processing cavity, gas spraying head and manufacturing method thereof - Google Patents
Plasma processing cavity, gas spraying head and manufacturing method thereof Download PDFInfo
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- CN104715993B CN104715993B CN201310688060.2A CN201310688060A CN104715993B CN 104715993 B CN104715993 B CN 104715993B CN 201310688060 A CN201310688060 A CN 201310688060A CN 104715993 B CN104715993 B CN 104715993B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
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- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a plasma processing cavity, a gas spraying head and a manufacturing method thereof. The gas spraying head is integrally molded and is provided with a plurality of gas through holes machined at a time, and the outer wall of the gas spraying head and inner walls of the gas through holes are each covered with a first anti-corrosion layer. The plasma processing cavity and the gas spraying head are simple in process, and low in manufacturing cost. The gas spraying head is more stable and more reliable in structure; in addition, the anti-corrosion layers are free of pores, are denser and will not crack. The manufacturing process of a base sheet of the plasma processing cavity is more stable.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly, to a kind of plasma process chamber, gas spray and its
Manufacture method.
Background technology
Plasma treatment appts carry out the base of semiconductor chip and plasma flat-plate using the operation principle of vacuum reaction chamber
The processing of piece.The operation principle of vacuum reaction chamber is to be passed through the reaction gas containing suitable etchant source gas in vacuum reaction chamber
Body, then carries out radio-frequency (RF) energy input to this vacuum reaction chamber again, with activated reactive gas, to excite and to maintain plasma,
So that the material layer respectively on etching substrate surface or depositing layer of material over the substrate surface, so to semiconductor chip and etc. from
Sub- flat board is processed.
Gas spray is the important component part in plasma processing apparatus.Set outside plasma processing apparatus
It is equipped with one or more gas sources, one or more reacting gas is transported to gas shower by gas transmission pipeline by gas source
Head.Gas spray is arranged at the top of plasma processing apparatus chamber interior, parallel with gas spray below chamber
Region is additionally provided with the base station of a placement substrate, is process zone between gas spray and base station.Gas spray it
In be provided with some pores, reacting gas by some pores evenly into process zone, and the effect in radio frequency power source
Under be provoked into plasma.Lower surface due to gas spray is directly exposed to plasma, therefore generally requires at it
Upper setting etch resistant layer, but, with the increase of use time, gas spray will also tend to produce problems of crack.
Therefore, it is devoted to always in the industry studying gas spray reliable and stable, that resistance to corrosion is strong.
Content of the invention
For the problems referred to above in background technology, the present invention proposes a kind of plasma process chamber, gas spray
And its manufacture method.
First aspect present invention provides a kind of gas spray for plasma process chamber, wherein, described gas
Body spray head is integrally formed, is provided with the gas via-hole that several process at one time, outside described gas spray
Wall and gas via-hole inwall are coated with one layer of first etch resistant layer.
Further, described gas shower rostral wall and be exposed to the first etch resistant layer on the lower surface of plasma
On, it is coated with one layer of second etch resistant layer.
Further, it is provided with heater in described gas spray.
Further, the material of described first etch resistant layer and the second etch resistant layer is selected from following any one or appoints multinomial：
Y2O3、YF3、ErO2、Al2O3.
Further, the deposition process of described first etch resistant layer and the second etch resistant layer is respectively selected from following any one：
Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemical vapor deposition.
Further, the Thickness scope of described first etch resistant layer is more than 0.5um.
Further, the Thickness scope of described second etch resistant layer is by described gas spray and described first
The service life of etch resistant layer determines, and the thickness of described second etch resistant layer is more than the thickness of described first etch resistant layer
Degree.
Further, described gas spray is by aluminium alloy processing procedure.
Second aspect present invention provides a kind of manufacture method of the gas spray for plasma process chamber, its
In, it includes the gas spray of first aspect present invention, and wherein, described manufacture method comprises the steps：
One aluminum alloy substrate is provided；
Several gas via-holes are bored from top to bottom on described aluminum alloy substrate, forms gas spray；
Deposit one layer of first etch resistant layer in the outer wall of described gas spray and the inwall of gas via-hole；
Side wall and surface one layer of second etch resistant layer of deposition being exposed to plasma in described gas spray.
Further, methods described is additionally included in the step arranging heater in gas spray.
Further, described manufacture method comprises the steps：Outer wall and gas via-hole in described gas spray
Inwall using plasma immersion ion injection with one layer of first etch resistant layer of deposition.
Further, described manufacture method comprises the steps：The side wall of described gas spray and be exposed to etc. from
The surface of daughter adopts physical vapour deposition (PVD) to deposit one layer of second etch resistant layer.
Third aspect present invention provides a kind of plasma process chamber, wherein, described plasma process chamber bag
Include the gas spray described in first aspect present invention.
Plasma process chamber, gas spray and its manufacture method operation that the present invention provides are simple, manufacturing cost
Low.Gas shower header structure is more reliable and more stable, and etch resistant layer tight and denser, will not ftracture.The present invention provides
Plasma process chamber in substrate processing procedure more stable.
Brief description
Fig. 1 is the structural representation of the gas spray of the plasma process chamber of prior art；
Fig. 2 is the structural representation for plasma process chamber according to one specific embodiment of the present invention；
Fig. 3 is the structure of the gas spray for plasma process chamber according to one specific embodiment of the present invention
Schematic diagram.
Specific embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is illustrated.
It is noted that " semiconductor arts piece ", " wafer " and " substrate " these words will be frequent in subsequent explanation
Used interchangeably, in the present invention, they all refer in the processed process conditions of process chamber, and process conditions are not limited to wafer, lining
Bottom, substrate, large-area flat-plate substrate etc..For convenience of explanation, herein will be mainly with " base in embodiment illustrates and illustrates
To make exemplary illustration as a example piece ".
Fig. 1 is the structural representation of the gas spray of the plasma process chamber of prior art.As shown in figure 1, gas
Body spray head 100 includes installation base plate 103, the second main body 102 and the first main body 101 and yttria coating 104 from top to bottom.
Wherein, the first main body 101 is provided with several first through holes 106a, the second main body 102 is provided with several second through holes
106b.First main body 101 and the second main body 102 machine respectively, i.e. provide substrate respectively and hole wherein.Cause
This, first through hole 106a and the second through hole 106b are not process at one time.First main body 101 and 102 points of the second main body
The main part of composition gas spray 100 is pressed together again after Zuan Kong not completing.Installation base plate 103 is as gas shower
100 installation frame, the support member as the other assemblies of gas spray and installed part.Due to reacting gas be from upper and
Lower flowing into gas spray 100, therefore, installation base plate 103 is provided with to being also adapted to property several third through-holes.Also
It is that reacting gas flows separately through third through-hole 106c, the second through hole 106b and first through hole 106a according to order from top to down
Enter process zone, thus excite in the presence of radio-frequency power becoming plasma, so that processing procedure is carried out to substrate.Finally, exist
The back side that gas spray 100 is exposed to the plasma in process zone is coated with one layer of yttria coating 104, is used for preventing
The corrosion of plasma, extends the service life of gas spray.
However, there are a lot of defects in the gas spray of prior art.With Capacitance Coupled plasma process chamber
(CCP), as a example, first main body 101 of the gas spray 100 made with carborundum (SiC) can be by not of the same race during processing procedure
The halogen plasma bombardment of class, such as by CF4,Cl2Excite the plasma of generation Deng reacting gas.Such gas shower
100 also have high cost and the limited problem of use time.Therefore, in order to improve performance and reduces cost, prior art
Gas spray 100 is further exposed to surface using plasma spraying (Plasma Spray) of plasma at it and applies
Cover one layer of yttria coating (Y2O3) 104, and other regions of gas spray 100 are all using anodization
(anodized) to reach erosion-resisting purpose.Porous knot due to yttria coating 104 rough surface of plasma spray coating
Structure (porous structure), such gas spray 100 has very high particle contamination wind in plasma process
Danger (particle creation risk).
In order to improve stability further, gas spray 100 further adopts physical vapor to sink to prior art
Long-pending it is deposited without hole and highdensity yttria coating 104 is exposed to the surface of plasma in gas spray.Such
Setting makes metal pollutant and particulate pollutant really reduce, and this is to apply due to employing physical vapor deposition yittrium oxide
Layer 104 and the metallic substrates (the first main body 101) of gas spray 100, such as aluminium alloy.However, as shown in figure 1, in electric capacity
In coupled mode plasma process chamber, heater 105 is arranged in the second main body 102 on gas spray, described
Second main body 102 is made up of aluminium alloy and is embedded with some heaters 105, and its outer surface is also through anodized.
As shown in figure 1, the stability of plasma process by gas spray 100 and heater 105 and can be installed
Substrate 103 affects, and this is due to having one between the second main body 102 of heater 105 and the first main body 101 having embedded
Individual interface/contact surface a, this contact surface a can affect the heat of heater 105 generation in the first main body 101 and the second main body 102
Between propagation.And although the first main body 101 and the second main body 102 are compressed on by prior art using various technology as far as possible
Together, make as far as possible contact surface a be there is no a space level off to 0, but contact surface a yet suffers from space so that first is main
The capacity of body 101 and the second main body 102 and potential produce change, therefore can lead to the plasma distribution of substrate surface.In addition,
The space of contact surface a also can make different reacting gas enter each gas passage by this space, such as when needing respectively
When being passed through two or more differential responses gas, gas can occur mixing thus processing procedure mesh can not be reached entering between process zone
's.Additionally, the first main body 101 is that carborundum is made, the second main body 102 is that aluminium alloy is made, and technique is unstable between the two
Fixed, and because the numerous and diverse manufacturing cost of manufacturing process also can rise.
It should be noted that gas spray 100 main body of prior art is the first main body 101, and the second main body 102 is main
If arranging to carry heater 105, and so that reacting gas smoothly entering chamber and arranges wherein
Some gas via-holes.
Based on this, the invention provides a kind of plasma process chamber, gas spray and its manufacture method, hereafter will
In conjunction with as a example capacitive coupling plasma etching cavity, present invention is described.It should be noted that people in the art
Member, it should be appreciated that the present invention is applicable not only to capacitive coupling plasma etching cavity, applies also for chemical vapor deposition dress
Put with metal organic vapor phase deposition device etc..Capacitive coupling plasma etching cavity in the preferred embodiment of the present invention is not
It is considered as limitation of the present invention.Fig. 2 is the structure for plasma process chamber according to one specific embodiment of the present invention
Schematic diagram.As shown in Fig. 2 plasma etch chamber room A has process chambers, process chambers are substantially cylindricality, and locate
Reason cavity wall 700 perpendicular, has Top electrode arranged in parallel and bottom electrode, wherein Top electrode in process chambers
It is integrated near gas spray, bottom electrode is integrated among base station 400, all not shown.Generally, Top electrode and bottom electrode it
Between region be processing region P, this processing region P will be formed high-frequency energy to light and to maintain plasma.In base station 400
Electrostatic chuck above place substrate W to be processed, this substrate W can be treat the semiconductor chip that will etch or process or
Wait the glass plate of flat faced display to be processed into.Wherein, described electrostatic chuck is used for clamping substrate W, and chucking power is by arranging
Produce after the DC electrode 500 on electrostatic chuck upper-layer insulation film is applied with DC voltage 600.Reacting gas is from gas
It is input in source 300 in process chambers, one or more radio-frequency power supplies 600 can individually be applied on the bottom electrode or same
When be respectively applied on Top electrode and bottom electrode, in order to be transported on bottom electrode or Top electrode and bottom electrode radio-frequency power
On, thus producing big electric field inside process chambers.Most of electric field lines are comprised in the place between Top electrode and bottom electrode
In reason region, this electric field accelerates to the electronics being present on a small quantity within process chambers, the reacting gas being allowed to and inputting
Gas molecule collision.These collisions lead to the ionizing of reacting gas and exciting of plasma, thus producing in process chambers
Raw plasma.The neutral gas molecule of reacting gas loses electronics when standing these highfields, stay positively charged from
Son.The ion of positively charged accelerates towards bottom electrode direction, is combined with the neutral substance in processed substrate W, excites substrate to add
Work, i.e. etching, deposit etc..It is provided with exhaust gas region, exhaust gas region at certain position suitable of plasma etch chamber room A
Be connected with external exhaust apparatus (such as vacuum pump 800), in order in processing procedure by used reacting gas and by-product
Product gas extracts chamber out.Wherein, within the chamber be also provided with plasma confinement ring for by plasma confinement in processing region
Interior.
Fig. 3 is the structure of the gas spray for plasma process chamber according to one specific embodiment of the present invention
Schematic diagram.Wherein, gas spray 200 is arranged at chamber top, and it is connected to gas source 300 by gas piping, described
It is connected with a valve 900 between gas spray 200 and gas source 300.Open valve 900, one or more reacting gas is just
Enter gas spray 200 from gas source 300 gas coming through pipeline.It is provided with several gas via-holes in gas spray 200
202, the shape of gas spray 200 is that have certain thickness tabular, and gas via-hole 202 is arranged on gas with being uniformly dispersed
In spray head 200, therefore, reacting gas pass through gas via-hole 202 evenly into process volume P radio-frequency (RF) energy effect
Under be provoked into plasma, thus on base station 400 place substrate W carry out processing procedure.
Wherein, in the present invention, described gas spray 200 is integrally formed (one piece).As shown in figure 3, gas
Body spray head 200 is that a monoblock matrix is fabricated by, and is not that prior art will be compressed together for two block main bodies.Described gas
It is provided with the gas via-hole 202 that several process at one time from top to bottom in spray head 200.Therefore, present invention, avoiding now
Gas spray in technology is had to be formed by upper and lower two main bodys compacting, its contact surface produces space, thus produce reacting gas existing
Being mutually mixed before entering process zone P, it also avoid prior art gas spray due to upper and lower two main bodys and makes material
The unstability that material is different and produces, and the complicated problem with cost increase of processing procedure operation.
Additionally, described gas spray 200 outer wall and gas via-hole 202 inwall are coated with one layer of first etch resistant layer
204.Such surface treatment makes the gas spray 200 that aluminium alloy is made be combined in and is exposed to the thin of plasma surface
The first thin etch resistant layer 204 is protected, and because the separation gas spray head 200 of the first etch resistant layer 204 no longer directly connects
Contact corrosive process gas, and rise gas via-hole 202 also no longer due to process gas by and be subject to process gas
Corrosiveness.Additionally, invention also avoids leading to process gas to excite the plasma of generation due to being applied with radio-frequency (RF) energy
Body directly contacts the surface that gas spray 200 is exposed to process zone P.
Further, the material of the first etch resistant layer 204 includes Y2O3Or YF3, its thickness about at least 0.5um.
Further, described gas spray 200 side wall and be exposed to the first anti-corruption on the lower surface of plasma
On erosion layer 204, it is coated with one layer of second etch resistant layer 206.The thickness of described second etch resistant layer 206 is according to required gas
The service life of spray head 200 and the first etch resistant layer 204 determines.And, the thickness of the second etch resistant layer 206 is more than the
One etch resistant layer 204.
Further, heater 205 is set directly in the matrix of gas spray 200.Due in heater 205
It is embedded in the function therefore in gas spray 200 with heating.
Further, the material of described first etch resistant layer 204 and the second etch resistant layer 206 is selected from following any one or appoints
Multinomial：Y2O3、YF3、ErO2、Al2O3.Preferably, described first etch resistant layer 204 and the second etch resistant layer 206 are Y2O3Or YF3.
Further, the deposition process of described first etch resistant layer 204 and the second etch resistant layer 206 is respectively selected from following
One：Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemical vapor deposition.Above-mentioned manufacturing method thereof will
It is described below.
Further, gas spray 200 is made up of aluminium alloy (Al alloy) material, gas spray 200
Gas distribution pattern (gas distribution patterns) has specific structure and the distribution of gas via-hole 202, so
Geometric properties can coordinate easily or be arranged on installing plate (not shown, to be generally positioned above gas spray) with
Form the gas spray of the whole inclusion Top electrode of plasma etch chamber room A.
Second aspect present invention provides a kind of manufacturer of the gas spray 200 for plasma process chamber
Method.First, an aluminum alloy substrate is provided.Then, described aluminum alloy substrate is uniformly disperseed from top to bottom ground auger several
Gas via-hole 202, forms gas spray 200, to form specific geometric properties.Then, in described gas spray 200
Outer wall and gas via-hole 202 inwall deposit one layer of first etch resistant layer 204.Finally, in the side wall of described gas spray 200
Deposit one layer of second etch resistant layer 206 with the surface being exposed to plasma.
Specifically, the first etch resistant layer passes through Plasma Immersion Ion Implantation and deposition method (plasma
Immersion ion deposition, PIID), plating (electroplating), wet chemistry coating (wet chemical
Coating) synthesis such as such as collosol and gel is in the side wall of gas spray 200 and gas via-hole 202 inwall.Process above system
Cheng Fangfa is able to carry out not having visual angle line (none-line-of-sight) to deposit to be evenly distributed on the side of gas spray 200
Wall and gas via-hole 202 inwall.The above-mentioned steps of the present invention are the surface sun of the gas spray in order to substitute prior art
Polarization process, thus improve gas spray resistance to corrosion, with gas spray 200 can bear simultaneously such as halogen etc. from
Daughter and halogen gas (such as Cl2) corrosion so that gas spray 200 has longer service life.According to this
One specific embodiment of invention, the first etch resistant layer 204 is that (less than 200 DEG C) is deposited on gas shower under low deposition temperature
200 side wall and gas via-hole 202 inwall, the coating being so obtained has good adhesiveness so that first is anticorrosive
Layer 204 can be on the gas spray 200 with plastics of aluminium alloy, other alloys or plasma resistant etc. as matrix.
Preferably, described first etch resistant layer 204 is made up of Plasma Immersion Ion Implantation and deposition method, wherein,
The aluminum alloy substrate of gas spray is dipped in the plasma and generally goes through pulse assistance (pulse bailed), then
Ion is accelerated to extract (extracted) from plasma and out impinge upon aluminum alloy substrate surface, its intermediate ion and reaction gas
Body and material surface reaction are thus concentrating (condensed) is the first etch resistant layer 204 simultaneously.Because plasma can be true
Produce in the presence of different plasma source in empty processing chamber housing, and gas spray substrate is applied painting by being ion implanted
Layer, the first etch resistant layer that therefore can obtain homogeneous and dense (uniform and dense) is in the side of gas spray 200
Wall and gas via-hole 202 inwall.
Further, methods described is additionally included in the step arranging heater 205 in gas spray 200.With regard to adding
How thermal 205 is arranged in gas spray 200, and prior art has the technical support of maturation, for simplicity's sake, no longer superfluous
State.
Wherein, described second etch resistant layer 206 typically yittrium oxide, its thickness is typically greater than 20um, or very
To more than 80um.Alternatively, the second etch resistant layer 206 optionally with physical vapor deposition in described gas spray
200 side walls and being exposed on the first etch resistant layer 204 on the lower surface of plasma.
Plasma process chamber, gas spray and its manufacture method being provided according to the present invention, gas spray quilt
It is installed in plasma process chamber and defines the whole Top electrode on the surface with plasma resistant diatery supplement.Due to gas
Spray head is integrally formed, and heater is also arranged in gas spray in the lump, and the temperature of gas spray is in multiple tools
Can be more precisely controlled in system journey.And, due to there is no the upper and lower of extra such as prior art gas spray
The volume change that the contact surface space of two main bodys is brought, the stability of substrate processing procedure is enhanced.Due to gas spray tool
There is etch resistant layer and there is no space dense structure, within the chamber particle contamination is also greatly diminished, and chamber service life obtains
Arrive raising.The anodized surface of prior art gas spray easily ftractures at a temperature of 100 DEG C, and the present invention does not also exist
This defect.
Although present disclosure has been made to be discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
Multiple modifications and substitutions all will be apparent from.Therefore, protection scope of the present invention should be limited to the appended claims.
Additionally, any reference in claim should not be considered as limiting involved claim；" inclusion " one, word was not excluded for
Unlisted device or step in other claim or description；The words such as " first ", " second " are only used for representing title, and
It is not offered as any specific order.
Claims (12)
1. a kind of gas spray for plasma process chamber is it is characterised in that described gas spray is one one-tenth
Type, it is provided with the gas via-hole that several process at one time, in described gas spray outer wall and gas via-hole
Wall is coated with one layer of first etch resistant layer；
Described gas shower rostral wall and being exposed on the first etch resistant layer on the lower surface of plasma, is coated with one layer
Second etch resistant layer.
2. gas spray according to claim 1 is it is characterised in that be provided with heating dress in described gas spray
Put.
3. gas spray according to claim 1 is it is characterised in that described first etch resistant layer and the second etch resistant layer
Material be selected from following any one or appoint multinomial：Y2O3、YF3、ErO2、Al2O3.
4. gas spray according to claim 3 is it is characterised in that described first etch resistant layer and the second etch resistant layer
Deposition process be respectively selected from following any one：Plasma Immersion Ion Implantation and deposition method, physical vapour deposition (PVD), chemistry
Vapour deposition.
5. gas spray according to claim 4 is it is characterised in that the Thickness scope of described first etch resistant layer
It is more than 0.5um.
6. gas spray according to claim 4 is it is characterised in that the Thickness scope of described second etch resistant layer
It is to be determined by the service life of described gas spray and described first etch resistant layer, and described second etch resistant layer
Thickness is more than the thickness of described first etch resistant layer.
7. gas spray according to claim 6 is it is characterised in that described gas spray is made up of aluminium alloy
's.
8. a kind of manufacture method of the gas spray for plasma process chamber, wherein, it includes claim 1 to 7
Gas spray described in any one is it is characterised in that described manufacture method comprises the steps：
One aluminum alloy substrate is provided；
Several gas via-holes are bored from top to bottom on described aluminum alloy substrate, forms gas spray；
Deposit one layer of first etch resistant layer in the outer wall of described gas spray and the inwall of gas via-hole；
Side wall and surface one layer of second etch resistant layer of deposition being exposed to plasma in described gas spray.
9. manufacture method according to claim 8 is it is characterised in that methods described is additionally included in setting in gas spray
The step of heater.
10. manufacture method according to claim 8 is it is characterised in that described manufacture method comprises the steps：Described
The injection of inwall using plasma immersion ion and one layer of the deposition of the outer wall of gas spray and gas via-hole
First etch resistant layer.
11. manufacture methods according to claim 8 are it is characterised in that described manufacture method comprises the steps：Described
The side wall of gas spray adopts physical vapour deposition (PVD) to deposit one layer of second etch resistant layer with the surface being exposed to plasma.
A kind of 12. plasma process chamber ask 1 to 7 it is characterised in that described plasma process chamber includes claim
Gas spray described in any one.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310688060.2A CN104715993B (en) | 2013-12-13 | 2013-12-13 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
| TW103142795A TWI541894B (en) | 2013-12-13 | 2014-12-09 | A plasma processing chamber, a gas sprinkler head and a method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310688060.2A CN104715993B (en) | 2013-12-13 | 2013-12-13 | Plasma processing cavity, gas spraying head and manufacturing method thereof |
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| CN104715993A CN104715993A (en) | 2015-06-17 |
| CN104715993B true CN104715993B (en) | 2017-02-22 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| TWI582823B (en) * | 2015-11-17 | 2017-05-11 | 弘潔科技股份有限公司 | A gas distribution plate for plasmas reaction chamber |
| US11326253B2 (en) | 2016-04-27 | 2022-05-10 | Applied Materials, Inc. | Atomic layer deposition of protective coatings for semiconductor process chamber components |
| US10186400B2 (en) | 2017-01-20 | 2019-01-22 | Applied Materials, Inc. | Multi-layer plasma resistant coating by atomic layer deposition |
| US10755900B2 (en) * | 2017-05-10 | 2020-08-25 | Applied Materials, Inc. | Multi-layer plasma erosion protection for chamber components |
| CN110634723B (en) * | 2018-06-21 | 2022-07-05 | 中微半导体设备(上海)股份有限公司 | Corrosion-resistant gas mixing device and plasma treatment equipment |
| CN109939618A (en) * | 2019-03-26 | 2019-06-28 | 沈阳拓荆科技有限公司 | Spray structure and chemical source supply system |
| CN112713074B (en) * | 2019-10-25 | 2023-03-07 | 中微半导体设备(上海)股份有限公司 | Gas shower head assembly and plasma processing equipment |
| CN112908819B (en) * | 2019-12-03 | 2022-04-01 | 长鑫存储技术有限公司 | Gas distributor and processing method thereof |
| CN113594013B (en) * | 2020-04-30 | 2024-01-26 | 中微半导体设备(上海)股份有限公司 | Component, method and device for forming coating layer and plasma reaction device |
| CN114068273B (en) * | 2020-07-31 | 2024-04-05 | 中微半导体设备(上海)股份有限公司 | Component, preparation method thereof and plasma reaction device |
| CN114300336B (en) * | 2021-12-28 | 2024-02-23 | 拓荆科技股份有限公司 | Plasma reactor |
| CN118553593B (en) * | 2024-07-24 | 2024-10-29 | 深圳市新凯来工业机器有限公司 | Upper electrode, plasma etching equipment and temperature control method |
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| TW201112347A (en) * | 2009-09-25 | 2011-04-01 | Hermes Epitek Corp | Making method of showerhead for semiconductor processing apparatus |
| TW201131680A (en) * | 2009-11-17 | 2011-09-16 | Applied Materials Inc | Showerhead assembly with improved impact protection |
| CN102268656A (en) * | 2011-08-05 | 2011-12-07 | 中微半导体设备(上海)有限公司 | Sprinkler of metal organic chemical vapor deposition (MOCVD) equipment as well as manufacture method and use method thereof |
| CN102522306A (en) * | 2011-12-29 | 2012-06-27 | 中微半导体设备(上海)有限公司 | Spray head |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI541894B (en) | 2016-07-11 |
| CN104715993A (en) | 2015-06-17 |
| TW201537635A (en) | 2015-10-01 |
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