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CN104715723B - Display device and its image element circuit and driving method - Google Patents

Display device and its image element circuit and driving method Download PDF

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Publication number
CN104715723B
CN104715723B CN201510122622.6A CN201510122622A CN104715723B CN 104715723 B CN104715723 B CN 104715723B CN 201510122622 A CN201510122622 A CN 201510122622A CN 104715723 B CN104715723 B CN 104715723B
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transistor
node
potential
pole
driving
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CN104715723A (en
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张盛东
孟雪
冷传利
王翠翠
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Peking University Shenzhen Graduate School
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Priority to PCT/CN2016/076344 priority patent/WO2016146053A1/en
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    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09GARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00Aspects of the constitution of display devices
    • G09G2300/08Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
    • G09G2300/0809Several active elements per pixel in active matrix panels
    • G09G2300/0819Several active elements per pixel in active matrix panels used for counteracting undesired variations, e.g. feedback or autozeroing

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Control Of El Displays (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种像素电路,包括:用于串联在第一电平端和第二电平端之间的驱动晶体管和发光元件,驱动晶体管的第一极连接至发光元件的第一端,在驱动晶体管的控制极和一个导通电极之间连接第二晶体管和存储电容。在初始化阶段,第二晶体管导通,分别初始化存储电容两端的电位和驱动晶体管控制极的电位;在阈值补偿阶段,利用向驱动晶体管控制极提供参考电位,读取驱动晶体管的阈值电压并存储于存储电容,从而实现了对驱动晶体管阈值电压的补偿,继而补偿了像素电路显示的不均匀性。

A pixel circuit, comprising: a driving transistor and a light-emitting element connected in series between a first level end and a second level end, the first electrode of the driving transistor is connected to the first end of the light-emitting element, and the control electrode of the driving transistor A second transistor and a storage capacitor are connected between the conducting electrode and a conducting electrode. In the initialization phase, the second transistor is turned on, and the potential at both ends of the storage capacitor and the potential of the control electrode of the driving transistor are respectively initialized; in the threshold compensation phase, the threshold voltage of the driving transistor is read and stored in The storage capacitor realizes compensation for the threshold voltage of the drive transistor, and then compensates for the non-uniformity displayed by the pixel circuit.

Description

显示装置及其像素电路和驱动方法Display device, pixel circuit and driving method thereof

技术领域technical field

本申请涉及显示器件领域,具体涉及一种显示装置及其像素电路和驱动方法。The present application relates to the field of display devices, in particular to a display device, a pixel circuit and a driving method thereof.

背景技术Background technique

有机发光二极管(Organic Light-Emitting Diode,OLED)显示因具有高亮度、高发光效率、宽视角和低功耗等优点,近年来被人们广泛研究,并迅速应用到新一代的显示当中。OLED显示的驱动方式可以为无源矩阵驱动(Passive MatrixOLED,PMOLED)和有源矩阵驱动(Active Matrix OLED,AMOLED)两种。无源矩阵驱动虽然成本低廉,但是存在交叉串扰现象不能实现高分辨率的显示,且无源矩阵驱动电流大,降低了OLED的使用寿命。相比之下,有源矩阵驱动方式在每个像素上设置数目不同的晶体管作为电流源,避免了交叉串扰,所需的驱动电流较小,功耗较低,使OLED的寿命增加,可以实现高分辨的显示,同时,有源矩阵驱动更容易满足大面积和高灰度级显示的需要。Due to the advantages of high brightness, high luminous efficiency, wide viewing angle and low power consumption, Organic Light-Emitting Diode (OLED) display has been extensively studied in recent years and has been rapidly applied to a new generation of displays. The OLED display can be driven in two ways: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED). Although the cost of passive matrix driving is low, it cannot realize high-resolution display due to crosstalk phenomenon, and the passive matrix driving current is large, which reduces the service life of OLED. In contrast, the active matrix driving method sets a different number of transistors on each pixel as a current source, which avoids crosstalk, requires less driving current, and lower power consumption, which increases the life of the OLED and can achieve High-resolution display, at the same time, the active matrix drive is easier to meet the needs of large-area and high-gray-level display.

传统AMOLED的像素电路是简单的两薄膜场效应晶体管(Thin Film Transistor,TFT)结构,这种电路虽然结构简单,但是不能补偿驱动晶体管T1和OLED阈值电压漂移或因TFT器件采用多晶材料制成而导致面板各处TFT器件的阈值电压不均匀性。当驱动晶体管T1阈值电压、OLED阈值电压发生漂移或在面板上各处的值不一致时,驱动电流IDS就会改变,并且面板上不同的像素因偏置电压的不同漂移情况也不一样,这样就会造成面板显示的不均匀性。The pixel circuit of a traditional AMOLED is a simple two-thin film transistor (Thin Film Transistor, TFT) structure. Although this circuit has a simple structure, it cannot compensate the drift of the driving transistor T1 and the OLED threshold voltage or because the TFT device is made of polycrystalline materials. This results in non-uniform threshold voltages of TFT devices across the panel. When the threshold voltage of the driving transistor T1 and the threshold voltage of the OLED drift or the values on the panel are inconsistent, the driving current I DS will change, and different pixels on the panel have different drifts due to different bias voltages, so It will cause the unevenness of the panel display.

发明内容Contents of the invention

本申请提供一种显示装置及其像素电路和驱动方法,以补偿驱动晶体管的阈值电压的不均匀性或者阈值电压漂移。The present application provides a display device, a pixel circuit and a driving method thereof, so as to compensate the non-uniformity of the threshold voltage or threshold voltage drift of a driving transistor.

根据第一方面,一种实施例中提供一种像素电路,包括:According to the first aspect, a pixel circuit is provided in an embodiment, including:

用于串联在第一电平端和第二电平端之间的驱动晶体管和发光元件,以及第二晶体管、第三晶体管和存储电容;驱动晶体管的第一极连接至发光元件的第一端形成第三节点,驱动晶体管的第二极和发光元件的第二端分别用于连接至第一电平端和第二电平端;驱动晶体管的控制极连接至第二晶体管的第一极形成第一节点,第二晶体管的第二极连接至第三晶体管的第一极形成第二节点,第二晶体管的控制极用于输入发光控制信号;第三晶体管的第二极用于连接至用于提供数据信号或者参考电位的数据线,第三晶体管的控制极用于输入扫描信号;存储电容连接至第二节点和第三节点之间。It is used to connect the driving transistor and the light emitting element in series between the first level end and the second level end, as well as the second transistor, the third transistor and the storage capacitor; the first pole of the driving transistor is connected to the first end of the light emitting element to form the first Three nodes, the second pole of the driving transistor and the second terminal of the light-emitting element are respectively used to connect to the first level terminal and the second level terminal; the control pole of the driving transistor is connected to the first pole of the second transistor to form a first node, The second pole of the second transistor is connected to the first pole of the third transistor to form a second node, the control pole of the second transistor is used to input the light-emitting control signal; the second pole of the third transistor is used to connect to the Or the data line of the reference potential, the control electrode of the third transistor is used to input the scan signal; the storage capacitor is connected between the second node and the third node.

根据第二方面,一种实施例中提供一种像素电路,包括:According to the second aspect, a pixel circuit is provided in an embodiment, including:

用于串联在第一电平端和第二电平端之间的驱动晶体管和发光元件,以及第二晶体管、第三晶体管、第四晶体管、第五晶体管和存储电容;驱动晶体管的第一极连接至发光元件的第一端形成第三节点,驱动晶体管的第二极和发光元件的第二端分别用于连接至第一电平端和第二电平端;驱动晶体管的控制极连接至第二晶体管的第一极形成第一节点,第二晶体管的第二极连接至第三晶体管的第一极形成第二节点,第二晶体管的控制极用于输入发光控制信号;第三晶体管的第二极用于连接至用于提供数据信号的数据线,第三晶体管的控制极用于输入扫描信号;第五晶体管的第一极连接至第一节点,第五晶体管的第二极用于输入参考电位,第五晶体管的控制极连接至第三晶体管的控制极;第四晶体管的第一极连接至第三节点,第四晶体管的第二极用于输入初始化电位,第四晶体管的控制极用于输入初始化控制信号;存储电容连接至第二节点和第三节点之间。The driving transistor and the light emitting element, as well as the second transistor, the third transistor, the fourth transistor, the fifth transistor and the storage capacitor, which are connected in series between the first level end and the second level end; the first pole of the driving transistor is connected to The first end of the light-emitting element forms a third node, the second pole of the driving transistor and the second end of the light-emitting element are respectively used to connect to the first level end and the second level end; the control electrode of the driving transistor is connected to the second transistor The first pole forms the first node, the second pole of the second transistor is connected to the first pole of the third transistor to form the second node, the control pole of the second transistor is used for inputting the light-emitting control signal; the second pole of the third transistor is used for Connected to the data line for providing data signals, the control pole of the third transistor is used to input the scan signal; the first pole of the fifth transistor is connected to the first node, and the second pole of the fifth transistor is used to input the reference potential, The control pole of the fifth transistor is connected to the control pole of the third transistor; the first pole of the fourth transistor is connected to the third node, the second pole of the fourth transistor is used for inputting the initialization potential, and the control pole of the fourth transistor is used for inputting Initialize the control signal; the storage capacitor is connected between the second node and the third node.

根据第三方面,一种实施例中提供一种显示装置,包括:According to a third aspect, an embodiment provides a display device, including:

像素电路矩阵,所述像素电路矩阵包括排列成n行m列矩阵的上述的像素电路,其中,n和m为大于0的整数;栅极驱动电路,用于产生扫描脉冲信号,并通过沿第一方向形成的各行扫描线向像素电路提供所需的控制信号;数据驱动电路,用于产生代表灰度信息的数据电压信号,并通过沿第二方向形成的各数据线向像素电路提供数据信号;控制器,用于向栅极驱动电路和数据驱动电路提供控制时序。A pixel circuit matrix, the pixel circuit matrix includes the above-mentioned pixel circuits arranged in a matrix of n rows and m columns, wherein n and m are integers greater than 0; a gate drive circuit is used to generate a scan pulse signal, and pass the The scan lines formed in one direction provide required control signals to the pixel circuits; the data drive circuit is used to generate data voltage signals representing grayscale information, and provide data signals to the pixel circuits through the data lines formed along the second direction ; The controller is used to provide control timing to the gate drive circuit and the data drive circuit.

根据第四方面,一种实施例中提供一种像素电路驱动方法,像素电路的每一驱动周期包括初始化阶段、阈值补偿阶段、数据写入阶段和发光阶段,驱动方法包括:According to the fourth aspect, an embodiment provides a pixel circuit driving method, each driving cycle of the pixel circuit includes an initialization phase, a threshold compensation phase, a data writing phase and a light emitting phase, and the driving method includes:

在初始化阶段,第二晶体管导通,分别初始化存储电容两端的电位和驱动晶体管控制极的电位;在阈值补偿阶段,第三晶体管和/或第五晶体管导通,向驱动晶体管控制极提供参考电位,读取驱动晶体管的阈值电压信息并通过存储电容存储;在数据写入阶段,第三晶体管导通传输数据电压并存储于存储电容;在发光阶段,第一晶体管根据存储电容两端的压差驱动产生驱动电流,并驱动发光元件发光。In the initialization phase, the second transistor is turned on to respectively initialize the potential at both ends of the storage capacitor and the potential of the control electrode of the driving transistor; in the threshold compensation phase, the third transistor and/or the fifth transistor are turned on to provide a reference potential to the control electrode of the driving transistor , read the threshold voltage information of the drive transistor and store it through the storage capacitor; in the data writing phase, the third transistor is turned on to transmit the data voltage and stored in the storage capacitor; in the light-emitting phase, the first transistor is driven according to the voltage difference across the storage capacitor A driving current is generated to drive the light-emitting element to emit light.

依据上述实施例的像素电路,通过在驱动晶体管的控制极和第一极之间连接第二晶体管和存储电容,并配合时序的控制,利用向驱动晶体管控制极提供参考电位读取驱动晶体管的阈值电压并存储于存储电容,从而实现了对驱动晶体管阈值电压的补偿,继而补偿了像素电路显示的不均匀性。According to the pixel circuit of the above-mentioned embodiment, by connecting the second transistor and the storage capacitor between the control electrode and the first electrode of the driving transistor, and cooperating with timing control, the threshold value of the driving transistor is read by providing a reference potential to the driving transistor control electrode The voltage is stored in the storage capacitor, thereby realizing the compensation for the threshold voltage of the driving transistor, and then compensating for the non-uniformity displayed by the pixel circuit.

附图说明Description of drawings

图1a为实施例一公开的一种像素电路结构图;Fig. 1a is a structural diagram of a pixel circuit disclosed in Embodiment 1;

图1b为实施例一公开的另一种像素电路结构图;Fig. 1b is a structural diagram of another pixel circuit disclosed in Embodiment 1;

图2为实施例一公开的一种像素电路驱动时序图;FIG. 2 is a driving sequence diagram of a pixel circuit disclosed in Embodiment 1;

图3a为实施例二公开的一种像素电路结构图;Fig. 3a is a structural diagram of a pixel circuit disclosed in Embodiment 2;

图3b为实施例二公开的另一种像素电路结构图;Fig. 3b is another pixel circuit structure diagram disclosed in Embodiment 2;

图4为实施例二公开的一种像素电路驱动时序图;FIG. 4 is a driving sequence diagram of a pixel circuit disclosed in Embodiment 2;

图5a为实施例二公开的一种提供初始化电位变形方案;Figure 5a is a scheme for providing initialization potential deformation disclosed in Embodiment 2;

图5b为实施例二公开的另一种提供初始化电位变形方案;Figure 5b is another scheme for providing initialization potential deformation disclosed in Embodiment 2;

图6a为实施例三公开的一种像素电路结构图;Fig. 6a is a structural diagram of a pixel circuit disclosed in Embodiment 3;

图6b为实施例三公开的另一种像素电路结构图;Fig. 6b is another pixel circuit structure diagram disclosed in the third embodiment;

图7为实施例三公开的一种像素电路驱动时序图;FIG. 7 is a driving sequence diagram of a pixel circuit disclosed in Embodiment 3;

图8a为实施例四公开的一种像素电路结构图;Fig. 8a is a structural diagram of a pixel circuit disclosed in Embodiment 4;

图8b为实施例四公开的另一种像素电路结构图;Fig. 8b is another pixel circuit structure diagram disclosed in Embodiment 4;

图9为实施例四公开的一种像素电路驱动时序图;FIG. 9 is a driving sequence diagram of a pixel circuit disclosed in Embodiment 4;

图10a为实施例五公开的一种像素电路结构图;Fig. 10a is a structural diagram of a pixel circuit disclosed in Embodiment 5;

图10b为实施例五公开的另一种像素电路结构图;Fig. 10b is another pixel circuit structure diagram disclosed in Embodiment 5;

图11为实施例五公开的一种像素电路驱动时序图;FIG. 11 is a driving sequence diagram of a pixel circuit disclosed in Embodiment 5;

图12为实施例六公开的一种显示装置结构原理图。FIG. 12 is a structural principle diagram of a display device disclosed in the sixth embodiment.

具体实施方式detailed description

下面通过具体实施方式结合附图对本发明作进一步详细说明。The present invention will be further described in detail below through specific embodiments in conjunction with the accompanying drawings.

首先对一些术语进行说明:本申请中的晶体管可以是任何结构的晶体管,比如双极型晶体管(BJT)或者场效应晶体管(FET)。当晶体管为双极型晶体管时,其控制极是指双极型晶体管的基极,第一极可以为双极型晶体管的集电极或发射极,对应的第二极可以为双极型晶体管的发射极或集电极,在实际应用过程中,“发射极”和“集电极”可以依据信号流向而互换;当晶体管为场效应晶体管时,其控制极是指场效应晶体管的栅极,第一极可以为场效应晶体管的漏极或源极,对应的第二极可以为场效应晶体管的源极或漏极,在实际应用过程中,“源极”和“漏极”可以依据信号流向而互换。显示器中的晶体管通常为一种场效应晶体管:薄膜晶体管(TFT)。下面以晶体管为场效应晶体管为例对本申请做详细的说明,在其它实施例中晶体管也可以是双极型晶体管。First, some terms are explained: the transistor in this application may be a transistor of any structure, such as a bipolar junction transistor (BJT) or a field effect transistor (FET). When the transistor is a bipolar transistor, its control pole refers to the base of the bipolar transistor, the first pole can be the collector or emitter of the bipolar transistor, and the corresponding second pole can be the base of the bipolar transistor. Emitter or collector, in the actual application process, "emitter" and "collector" can be interchanged according to the signal flow direction; when the transistor is a field effect transistor, its control electrode refers to the gate of the field effect transistor, the first One pole can be the drain or source of the field effect transistor, and the corresponding second pole can be the source or drain of the field effect transistor. In the actual application process, the "source" and "drain" can be based on the signal flow direction And swap. The transistors in displays are usually a type of field-effect transistor: a thin-film transistor (TFT). In the following, the present application will be described in detail by taking the transistor as a field effect transistor as an example. In other embodiments, the transistor may also be a bipolar transistor.

发光元件为有机发光二极管(Organic Light-Emitting Diode,OLED),在其它实施例中,也可以是其它发光元件。发光元件的第一端可以是阴极或阳极,相应地,则发光元件的第二端为阳极或阴极。本领域技术人员应当理解:电流应从发光元件的阳极流向阴极,因此,基于电流的流向,可以确定发光元件的阳极和阴极。The light-emitting element is an organic light-emitting diode (Organic Light-Emitting Diode, OLED), and in other embodiments, it may also be other light-emitting elements. The first end of the light emitting element can be a cathode or an anode, and correspondingly, the second end of the light emitting element is an anode or a cathode. Those skilled in the art should understand that: the current should flow from the anode to the cathode of the light-emitting element, therefore, based on the flow direction of the current, the anode and the cathode of the light-emitting element can be determined.

有效电平可以是高电平,也可以是低电平,可根据具体元器件的功能实现作适应性地置换。The effective level can be high level or low level, which can be replaced adaptively according to the function realization of specific components.

第一电平端和第二电平端是为像素电路工作所提供的电源两端。在一种实施例中,第一电平端可以为高电平端VDD,第二电平端为低电平端VSS或地线,在其它实施例中,也可以作适应性地置换。需要说明的是:对于像素电路而言,第一电平端(例如高电平端VDD)和第二电平端(例如低电平端VSS)并非本申请像素电路的一部分,为了使本领域技术人员更好地理解本申请的技术方案,而特别引入第一电平端和第二电平端予以描述。The first level end and the second level end are two ends of the power supply provided for the operation of the pixel circuit. In one embodiment, the first level terminal may be the high level terminal V DD , and the second level terminal may be the low level terminal V SS or the ground line, and in other embodiments, an adaptive replacement may also be made. It should be noted that: for the pixel circuit, the first level terminal (such as the high level terminal V DD ) and the second level terminal (such as the low level terminal V SS ) are not part of the pixel circuit of this application, in order to make those skilled in the art To better understand the technical solution of the present application, the first level terminal and the second level terminal are introduced in particular for description.

需要说明的是,为了描述方便,也为了使本领域技术人员更清楚地理解本申请的技术方案,本申请文件中引入第一节点A、第二节点B和第三节点C对电路结构相关部分进行标识,不能认定为电路中额外引入的端子。It should be noted that, for the convenience of description and to enable those skilled in the art to understand the technical solution of the present application more clearly, the relevant parts of the circuit structure of the first node A, the second node B and the third node C are introduced in this application document marked, it cannot be identified as an additional terminal introduced in the circuit.

为描述方便,高电平采用VH表征,低电平采用VL表征。For the convenience of description, the high level is characterized by V H , and the low level is characterized by V L.

实施例一:Embodiment one:

请参考图1a和图1b,为本实施例公开的一种像素电路结构图,包括:用于串联在第一电平端VDD和第二电平端VSS之间的驱动晶体管T1和发光元件OLED,以及第二晶体管T2、第三晶体管T3和存储电容C1。其中,图1a所示的像素电路中,各晶体管(驱动晶体管T1、第二晶体管T2和第三晶体管T3)为N型薄膜晶体管;图1b所示的像素电路中,各晶体管(驱动晶体管T1、第二晶体管T2和第三晶体管T3)为P型薄膜晶体管。Please refer to FIG. 1a and FIG. 1b, which are a structural diagram of a pixel circuit disclosed in this embodiment, including: a drive transistor T1 and a light emitting element OLED used to be connected in series between the first level terminal VDD and the second level terminal VSS, and The second transistor T2, the third transistor T3 and the storage capacitor C1. Wherein, in the pixel circuit shown in FIG. 1a, each transistor (driving transistor T1, second transistor T2 and third transistor T3) is an N-type thin film transistor; in the pixel circuit shown in FIG. 1b, each transistor (driving transistor T1, The second transistor T2 and the third transistor T3) are P-type thin film transistors.

驱动晶体管T1的第一极连接至发光元件OLED的第一端形成第三节点C,驱动晶体管T1的第二极和发光元件OLED的第二端分别用于连接至第一电平端VDD和第二电平端VSS。在一种实施例中,请参考图1a,发光元件OLED的第一端为阳极,发光元件OLED的第二端为阴极;驱动晶体管T1的第二极用于连接至第一电平端VDD,发光元件OLED的第二端用于连接至第二电平端VSS。在另一种实施例中,请参考图1b,发光元件OLED的第一端为阴极,发光元件OLED的第二端为阳极;驱动晶体管T1的第二极用于连接至第二电平端VSS,发光元件OLED的第二端用于连接至第一电平端VDD。The first pole of the driving transistor T1 is connected to the first end of the light-emitting element OLED to form a third node C, and the second pole of the driving transistor T1 and the second end of the light-emitting element OLED are respectively used to connect to the first level terminal VDD and the second Level terminal VSS. In one embodiment, please refer to FIG. 1a, the first terminal of the light-emitting element OLED is an anode, and the second terminal of the light-emitting element OLED is a cathode; the second electrode of the driving transistor T1 is used to connect to the first level terminal VDD to emit light The second terminal of the OLED is used to be connected to the second level terminal VSS. In another embodiment, please refer to FIG. 1b, the first end of the light emitting element OLED is a cathode, the second end of the light emitting element OLED is an anode; the second pole of the driving transistor T1 is used to connect to the second level terminal VSS, The second end of the light emitting element OLED is used to be connected to the first level end VDD.

驱动晶体管T1的控制极连接至第二晶体管T2的第一极形成第一节点A,第二晶体管T2的第二极连接至第三晶体管T3的第一极形成第二节点B,第二晶体管T2的控制极用于输入发光控制信号VEMThe control electrode of the driving transistor T1 is connected to the first electrode of the second transistor T2 to form a first node A, the second electrode of the second transistor T2 is connected to the first electrode of the third transistor T3 to form a second node B, and the second transistor T2 The control pole of is used to input the light-emitting control signal V EM .

第三晶体管T3的第二极用于连接至数据线DATA,在具体实施例中,数据线DATA用于提供数据信号VDATA或者参考电位VREF,在其它实施例中,数据线DATA还可以用于提供初始化电位,以初始化各节点的电位;第三晶体管T3的控制极用于输入扫描信号VScanThe second pole of the third transistor T3 is used to connect to the data line DATA. In a specific embodiment, the data line DATA is used to provide the data signal V DATA or the reference potential V REF . In other embodiments, the data line DATA can also be used The initialization potential is provided to initialize the potential of each node; the control electrode of the third transistor T3 is used for inputting the scan signal V Scan .

存储电容C1连接至第二节点B和第三节点C之间。The storage capacitor C1 is connected between the second node B and the third node C.

在具体实施例中,像素电路依次工作于第一阶段、第二阶段和第三阶段。在本实施例中,第一阶段可以依次包括初始化阶段和阈值补偿阶段,第二阶段为数据写入阶段,第三阶段为发光阶段。In a specific embodiment, the pixel circuit works sequentially in the first stage, the second stage and the third stage. In this embodiment, the first stage may sequentially include an initialization stage and a threshold compensation stage, the second stage is a data writing stage, and the third stage is a light emitting stage.

在第一阶段,第二晶体管T2和第三晶体管T3分别响应发光控制信号VEM的第一有效电平和扫描信号VScan的第一有效电平导通,向第一节点A和第二节点B传输参考电位VREF初始化第一节点A和第二节点B的电位,并通过相应的信号源向第三节点C提供初始化电位,以初始化第三节点C的电位,在本实施例中,第三节点C的初始化电位由第一电平端VDD通过导通的驱动晶体管T1提供,并读取驱动晶体管T1的阈值电压VTH。在一种实施例中,请参考图1a,在初始化阶段,驱动晶体管T1的第二极传输第一电平端VDD提供的初始化电位(例如低电平)初始化第三节点C的电位;在阈值补偿阶段,驱动晶体管T1的第二极传输第一电平端VDD的有效电平(例如高电平),于是,第三节点C的电位发生变化(例如升高),直到该节点电位与驱动晶体管T1的控制极相差一个驱动晶体管T1的阈值电压时为止,存储电容C1根据驱动晶体管T1的控制极(即第二节点B或者第一节点A)的电位和与第三节点C之间的压差得到驱动晶体管T1的阈值电压VTH。在另一种实施例中,请参考图1b,在初始化阶段,第三节点C的初始化电位由第二电平端VSS提供,即驱动晶体管T1的第二极传输第二电平端VSS提供的初始化电位(例如高电平)初始化第三节点C的电位;在阈值补偿阶段,驱动晶体管T1的第二极传输第二电平端VSS的有效电平(例如低电平),于是,第三节点C的电位发生变化(例如下降),直到该节点电位与驱动晶体管T1的控制极相差一个驱动晶体管T1的阈值电压时为止,存储电容C1根据驱动晶体管T1的控制极(即第二节点B或者第一节点A)的电位和与第三节点C之间的压差得到驱动晶体管T1的阈值电压VTHIn the first stage, the second transistor T2 and the third transistor T3 are respectively turned on in response to the first active level of the light emission control signal V EM and the first active level of the scanning signal V Scan , and supply voltage to the first node A and the second node B. transmit the reference potential V REF to initialize the potentials of the first node A and the second node B, and provide an initialization potential to the third node C through a corresponding signal source to initialize the potential of the third node C. In this embodiment, the third The initialization potential of the node C is provided by the first level terminal VDD through the turned-on driving transistor T1, and the threshold voltage V TH of the driving transistor T1 is read. In one embodiment, please refer to FIG. 1a, in the initialization phase, the second pole of the driving transistor T1 transmits the initialization potential (for example, low level) provided by the first level terminal VDD to initialize the potential of the third node C; stage, the second pole of the drive transistor T1 transmits the active level (for example, high level) of the first level terminal VDD, and then the potential of the third node C changes (for example, rises), until the potential of the node is the same as that of the drive transistor T1 When the difference between the control pole of the drive transistor T1 is the threshold voltage of the drive transistor T1, the storage capacitor C1 is obtained according to the potential of the control pole of the drive transistor T1 (that is, the second node B or the first node A) and the voltage difference between the third node C Threshold voltage V TH of drive transistor T1. In another embodiment, please refer to FIG. 1b. In the initialization phase, the initialization potential of the third node C is provided by the second level terminal VSS, that is, the second pole of the driving transistor T1 transmits the initialization potential provided by the second level terminal VSS. (eg high level) to initialize the potential of the third node C; in the threshold compensation stage, the second pole of the drive transistor T1 transmits the active level (eg low level) of the second level terminal VSS, so the third node C The potential changes (for example, drops), until the potential of this node is different from the control electrode of the driving transistor T1 by the threshold voltage of the driving transistor T1, the storage capacitor C1 is based on the control electrode of the driving transistor T1 (that is, the second node B or the first node The voltage difference between the potential of A) and the third node C obtains the threshold voltage V TH of the driving transistor T1.

在第二阶段,第二晶体管T2由发光控制信号VEM控制在截止状态,第三晶体管T3响应扫描信号VScan的第二有效电平导通向第二节点B传输数据信号VDATAIn the second stage, the second transistor T2 is controlled by the light emission control signal V EM to be in an off state, and the third transistor T3 is turned on to transmit the data signal V DATA to the second node B in response to the second active level of the scanning signal V Scan ;

在第三阶段,第三晶体管T3由扫描信号VScan控制在截止状态,第二晶体管T2响应发光控制信号VEM的第二有效电平导通,驱动晶体管T1响应第一节点A的电位导通驱动发光元件OLED发光。In the third stage, the third transistor T3 is controlled by the scan signal V Scan to be in an off state, the second transistor T2 is turned on in response to the second active level of the light emission control signal V EM , and the drive transistor T1 is turned on in response to the potential of the first node A Drive the light-emitting element OLED to emit light.

需要说明的是,在一种实施例中,请参考图1a,发光控制信号VEM有效电平(包括第一有效电平和第二有效电平)和扫描信号VScan的有效电平(包括第一有效电平和第二有效电平)均为高电平;在另一种实施例中,请参考图1b,发光控制信号VEM的有效电平(包括第一有效电平和第二有效电平)和扫描信号VScan的有效电平(包括第一有效电平和第二有效电平)均为低电平。It should be noted that, in one embodiment, please refer to FIG . An effective level and a second effective level) are both high levels; in another embodiment, please refer to FIG. ) and the active level of the scan signal V Scan (including the first active level and the second active level) are both low level.

在本实施例中,扫描信号VScan的第二有效电平滞后于所述扫描信号VScan的第一有效电平和发光控制信号VEM的第一有效电平,发光控制信号VEM的第二有效电平滞后于扫描信号VScan的第二有效电平。In this embodiment, the second active level of the scanning signal V Scan lags behind the first active level of the scanning signal V Scan and the first active level of the light emission control signal V EM , and the second active level of the light emission control signal V EM The active level lags behind the second active level of the scan signal V Scan .

下文以图1a为例对本实施例公开的像素电路驱动过程予以说明。本实施例的像素电路驱动过程分为初始化阶段、阈值补偿阶段、数据写入阶段和发光阶段,如图2所示为本实施例的信号时序,结合图2和图1a具体描述本实施例的驱动过程。The driving process of the pixel circuit disclosed in this embodiment will be described below by taking FIG. 1a as an example. The driving process of the pixel circuit in this embodiment is divided into an initialization stage, a threshold compensation stage, a data writing stage, and a light-emitting stage. Figure 2 shows the signal timing of this embodiment, and the details of this embodiment are described in conjunction with Figure 2 and Figure 1a drive process.

在初始化阶段:向第三晶体管T3提供的扫描信号VScan为高电平VH,即为第一有效电平;发光控制信号VEM为高电平VH,即为第一有效电平。于是,第三晶体管T3和第二晶体管T2导通。数据线DATA向第三晶体管T3传输参考电位VREF,该参考电位VREF通过导通的晶体管T3和T2输入到第一节点A,使得第一节点A的电位为VREF,由于第一节点A和第二节点B通过第二晶体管T2连通,所以两个节点电压相同。与此同时,驱动晶体管T1处于导通状态,第一电平端VDD输出一初始化电位低电平信号VL,该电平信号并通过开关晶体管T1输入到第三节点C,使得第三节点C电平变为VL。从而,完成了对第一节点A、第二节点B和第三节点C的电位初始化。In the initialization stage: the scanning signal V Scan provided to the third transistor T3 is at a high level V H , that is, the first active level; the light emission control signal V EM is at a high level V H , that is, the first active level. Thus, the third transistor T3 and the second transistor T2 are turned on. The data line DATA transmits the reference potential V REF to the third transistor T3, and the reference potential V REF is input to the first node A through the turned-on transistors T3 and T2, so that the potential of the first node A is V REF , since the first node A It is connected with the second node B through the second transistor T2, so the voltages of the two nodes are the same. At the same time, the drive transistor T1 is in the conduction state, and the first level terminal VDD outputs an initialization potential low-level signal V L , and the level signal is input to the third node C through the switching transistor T1, so that the third node C is electrically level to V L . Thus, the potential initialization of the first node A, the second node B, and the third node C is completed.

在阈值补偿阶段:扫描信号VScan和发光控制信号VEM继续维持第一有效电平,高电平VH,数据线DATA依旧传输参考电位VREF。第一电平端VDD提供的信号由低电平VL变回高电平VH,并通过驱动晶体管T1给第三节点C充电。第三节点C的电位因此会慢慢升高,直到该节点升高到VREF-VTH时,驱动晶体管T1会进入截止状态,第三节点C的电位维持为VREF-VTH。其中VTH为驱动晶体管T1的阈值电压。阈值补偿阶段结束后,驱动晶体管T1的阈值电压信息通过存储电容C1被存储到节点C上。需要注意的是,VREF-VTH小于发光元件OLED的阈值电压。In the threshold compensation stage: the scan signal V Scan and the light emission control signal V EM continue to maintain the first active level, high level V H , and the data line DATA still transmits the reference potential V REF . The signal provided by the first level terminal VDD changes from the low level V L back to the high level V H , and charges the third node C through the driving transistor T1 . Therefore, the potential of the third node C will rise slowly until the node rises to V REF -V TH , the driving transistor T1 will enter the cut-off state, and the potential of the third node C will remain at V REF -V TH . Where V TH is the threshold voltage of the driving transistor T1. After the threshold compensation phase ends, the threshold voltage information of the driving transistor T1 is stored on the node C through the storage capacitor C1. It should be noted that V REF -V TH is smaller than the threshold voltage of the light emitting element OLED.

数据写入阶段:发光控制信号VEM变为低电平,扫描信号VScan变为第二有效电平,如高电平VH。此时,第二晶体管T2处于截止状态,第三晶体管T3处于导通状态,数据线DATA提供数据电压VDATA并通过导通的第三晶体管T3写入到第二节点B中。需要说明的是,在其它实施例中,当存在多行像素电路并采用同时发光的方式时,则在该阶段,各行扫描信号VScan的第二有效电平依次到来,以逐行完成第二节点B的数据电压VDATA写入。在第二节点B的电位由VREF充电到VDATA的过程中,数据电压VDATA会通过存储电容C1和发光元件OLED的本征电容C2的耦合作用被耦合到节点C中从而使节点C的电位变化为:Data writing stage: the luminescence control signal V EM becomes low level, and the scanning signal V Scan becomes the second active level, such as high level V H . At this time, the second transistor T2 is in the off state, the third transistor T3 is in the on state, the data line DATA provides the data voltage V DATA and writes it into the second node B through the on third transistor T3. It should be noted that, in other embodiments, when there are multiple rows of pixel circuits and the method of emitting light at the same time is adopted, at this stage, the second active level of the scanning signal V Scan of each row arrives sequentially to complete the second active level row by row. The data voltage V DATA of node B is written. When the potential of the second node B is charged from V REF to V DATA , the data voltage V DATA will be coupled to the node C through the coupling effect of the storage capacitor C1 and the intrinsic capacitance C2 of the light-emitting element OLED, so that the node C The potential change is:

其中,VnodeC代表第三节点C的电位,C1和C2则分别是存储电容C1和发光元件OLED的本征电容的电容值。Wherein, VnodeC represents the potential of the third node C, and C1 and C2 are the capacitance values of the storage capacitor C1 and the intrinsic capacitance of the light emitting element OLED respectively.

发光阶段:发光控制信号VEM第二有效电平如高电VH平到来,扫描信号VScan维持为低电平。此时,第二晶体管T2处于导通状态,发光元件OLED开始发光,并且第三节点C的电位也变为VOLED。VOLED为发光元件OLED在发光时阳极的电位。此时,由于第二节点B和第一节点A通过第二晶体管T2耦合,两节点电位相同,节点A(B)由于存储电容C1的耦合作用而变为:Light-emitting stage: the second active level of the light-emitting control signal V EM , such as a high level V H , arrives, and the scanning signal V Scan maintains a low level. At this time, the second transistor T2 is in the conduction state, the light emitting element OLED starts to emit light, and the potential of the third node C also becomes V OLED . V OLED is the potential of the anode of the light-emitting element OLED when it emits light. At this time, since the second node B and the first node A are coupled through the second transistor T2, the potentials of the two nodes are the same, and the node A (B) becomes:

由(1-2)可以得出,发光阶段流过发光元件OLED的电流为:From (1-2), it can be concluded that the current flowing through the light-emitting element OLED during the light-emitting phase is:

其中,μn、Cox、W、L分别为驱动晶体管T1的有效迁移率、单位面积栅电容、沟道宽度和沟道长度。从(1-3)可以看出,最终流过发光元件OLED的电流与驱动晶体管T1的阈值电压以及OLED本身的阈值电压都无关,从而本示例的像素电路可以很好的补偿显示的不均匀性。Wherein, μ n , C ox , W and L are the effective mobility, the gate capacitance per unit area, the channel width and the channel length of the driving transistor T1 respectively. It can be seen from (1-3) that the current flowing through the light-emitting element OLED has nothing to do with the threshold voltage of the drive transistor T1 and the threshold voltage of the OLED itself, so the pixel circuit in this example can well compensate for the unevenness of the display .

需要说明的是,在其它实施例中,当存在多行像素电路并采用同时发光的方式时,则应在各行第二节点B的数据电压VDATA写入完成后,发光控制信号VEM第二有效电平才到来。It should be noted that, in other embodiments, when there are multiple rows of pixel circuits and the method of emitting light at the same time is adopted, after the writing of the data voltage V DATA of the second node B of each row is completed, the light emission control signal V EM second effective level before arriving.

本实施例的优点是,电路结构简单,只有三个晶体管和一个存储电容,可以增加像素开口率,能够减小发光元件OLED的电流密度,提高发光元件OLED使用寿命;电路采用充电式的阈值提取方式,即源跟随器结构,对于正负阈值都有补偿作用,所以这种方法对于采用耗尽型的晶体管同样有效;并且,在其它实施例中,当电路采用同时发光的驱动模式时,在3D显示中可以有效避免串扰的影响,此外,在初始化和阈值补偿过程中,电路在发光元件OLED的阳极输入一低电平,此低电平可以有效延长发光元件OLED的使用寿命。The advantage of this embodiment is that the circuit structure is simple, with only three transistors and one storage capacitor, which can increase the pixel aperture ratio, reduce the current density of the light-emitting element OLED, and improve the service life of the light-emitting element OLED; the circuit adopts a charging threshold value extraction The method, that is, the source follower structure, has a compensation effect on both positive and negative thresholds, so this method is also effective for depletion-type transistors; and, in other embodiments, when the circuit adopts the driving mode of simultaneous light emission, the In 3D display, the influence of crosstalk can be effectively avoided. In addition, in the process of initialization and threshold value compensation, the circuit inputs a low level at the anode of the light-emitting element OLED, which can effectively prolong the service life of the light-emitting element OLED.

需要说明的是,当各晶体管采用P型薄膜晶体管时,请参考图1b,其驱动过程与图1a的驱动过程相同,不同之处在于:各晶体管导通的有效电平为低电平VL;在初始化阶段,第二电平端VSS提供高电平,向第三节点C(发光元件OLED的阴极)充电至高电平。It should be noted that when the transistors use P-type thin film transistors, please refer to Figure 1b, the driving process is the same as that of Figure 1a, the difference is that the active level of each transistor is the low level V L ; In the initialization phase, the second level terminal VSS provides a high level, and charges the third node C (cathode of the light-emitting element OLED) to a high level.

实施例二:Embodiment two:

实施例一中,第三节点C的初始化电位通过第一电平端VDD或第二电平端VSS提供,本实施例与上述实施例不同之处在于,本实施例公开的像素电路中还包括第四晶体管T4,以向第三节点C提供相应的电位。请参考图3a和图3b,为本实施例公开的一种像素电路结构图。In Embodiment 1, the initialization potential of the third node C is provided through the first level terminal VDD or the second level terminal VSS. The difference between this embodiment and the above-mentioned embodiment is that the pixel circuit disclosed in this embodiment also includes a fourth Transistor T4 to provide a corresponding potential to the third node C. Please refer to FIG. 3 a and FIG. 3 b , which are structural diagrams of a pixel circuit disclosed in this embodiment.

第四晶体管T4的第一极连接至第三节点C,第四晶体管T4的第二极用于输入初始化电位,第四晶体管T4的控制极用于输入初始化控制信号VIni。在初始化阶段,第四晶体管T4响应初始化控制信号VIni的有效电平导通,第四晶体管T4的第二极向第三节点C传输第四晶体管T4的第二极输入的初始化电位。A first electrode of the fourth transistor T4 is connected to the third node C, a second electrode of the fourth transistor T4 is used for inputting an initialization potential, and a control electrode of the fourth transistor T4 is used for inputting an initialization control signal V Ini . In the initialization phase, the fourth transistor T4 is turned on in response to the active level of the initialization control signal V Ini , and the second pole of the fourth transistor T4 transmits the initialization potential input by the second pole of the fourth transistor T4 to the third node C.

需要说明的是,当驱动晶体管T1、第二晶体管T2、第三晶体管T3和第四晶体管T4为N型薄膜晶体管时,请参考图3a,第四晶体管T4的第二极输入的初始化电位为低电平VL,初始化控制信号VIni的有效电平为高电平VH。当驱动晶体管T1、第二晶体管T2、第三晶体管T3和第四晶体管T4为P型薄膜晶体管时,请参考图3b,第四晶体管T4的第二极输入的初始化电位为高电平VH,初始化控制信号VIni的有效电平为低电平VLIt should be noted that when the driving transistor T1, the second transistor T2, the third transistor T3 and the fourth transistor T4 are N-type thin film transistors, please refer to FIG. 3a, the initialization potential of the second pole input of the fourth transistor T4 is low Level V L , the effective level of the initialization control signal V Ini is a high level V H . When the driving transistor T1, the second transistor T2, the third transistor T3 and the fourth transistor T4 are P-type thin film transistors, please refer to FIG. 3b, the initialization potential of the second pole input of the fourth transistor T4 is a high level V H , The active level of the initialization control signal V Ini is a low level V L .

以图3a为例,请参考图4,为图3a所示像素电路驱动过程的时序图。该像素电路的驱动过程与实施例一的驱动过程大致相同,依次包括:初始化阶段、阈值补偿阶段、数据写入阶段和发光阶段,不同之处在于初始化阶段,第三节点C的低电平VL由第四晶体管T4的第二极提供而不是由第一电平端VDD提供,其余皆驱动过程和实施例一的驱动过程相同,此处不再赘述。Taking FIG. 3a as an example, please refer to FIG. 4, which is a timing diagram of the driving process of the pixel circuit shown in FIG. 3a. The driving process of the pixel circuit is roughly the same as the driving process of Embodiment 1, including: initialization phase, threshold value compensation phase, data writing phase and light emitting phase, the difference lies in the initialization phase, the low level V of the third node C L is provided by the second pole of the fourth transistor T4 instead of the first level terminal VDD, and the rest of the driving process is the same as that of the first embodiment, and will not be repeated here.

需要说明的是,由于第三节点C的初始化电位为低电平VL,因此,第四晶体管T4的第二极可以连接至第二电平端VSS,请参考图5a,由第二电平端VSS向第四晶体管T4的第二极提供低电平VL的初始化电位。It should be noted that, since the initialization potential of the third node C is low level V L , therefore, the second pole of the fourth transistor T4 can be connected to the second level terminal VSS, please refer to FIG. 5a, the second level terminal VSS An initialization potential of low level V L is provided to the second electrode of the fourth transistor T4.

当然,当采用图3b所示的像素电路即各晶体管为P型薄膜晶体管时,初始化控制信号VIni的有效电平为低电平VL,第四晶体管T4的第二极提供的初始化电位为高电平VH。此时,第四晶体管T4的第二极可以连接至第一电平端VDD,请参考图5b,由第一电平端VDD向第四晶体管T4的第二极提供高电平VH的初始化电位。Of course, when the pixel circuit shown in FIG. 3b is used, that is, when each transistor is a P-type thin film transistor, the effective level of the initialization control signal V Ini is a low level V L , and the initialization potential provided by the second pole of the fourth transistor T4 is High level V H . At this time, the second pole of the fourth transistor T4 can be connected to the first level terminal VDD . Please refer to FIG.

相比实施例一,本实施例的优点在于第一电平端VDD或者第二电平端VSS为恒定的高电平VH或者低电平VL,不需要输出初始化电位。当第一电平端VDD或者第二电平端VSS为恒定电位时,时序控制更易实现。Compared with Embodiment 1, the advantage of this embodiment is that the first level terminal VDD or the second level terminal VSS is a constant high level V H or low level V L , and there is no need to output an initialization potential. Timing control is easier to implement when the first level terminal VDD or the second level terminal VSS is at a constant potential.

实施例三:Embodiment three:

请参考图6a和图6b,为本实施例公开的像素电路结构图,与上述实施例不同之处在于,第四晶体管T4的第二极用于耦合至数据线DATA,第四晶体管T4第二极的初始化电位由数据线DATA提供。Please refer to FIG. 6a and FIG. 6b, which are the structure diagrams of the pixel circuit disclosed in this embodiment. The difference from the above embodiment is that the second pole of the fourth transistor T4 is used to couple The initialization potential of the pole is provided by the data line DATA.

请参考图7,为本实施例图6a所示像素电路的驱动时序图,本实施例像素电路的驱动过程和实施例二的驱动过程大体相同,不同之处在于,在初始化阶段,第三节点C的初始化电位(例如低电平VL)由数据线DATA提供,在阈值补偿阶段和数据写入阶段,数据线DATA则向第三晶体管T3分别提供参考电位VREF和数据电压VDATAPlease refer to FIG. 7 , which is a driving sequence diagram of the pixel circuit shown in FIG. 6 a in this embodiment. The driving process of the pixel circuit in this embodiment is basically the same as that in Embodiment 2. The initialization potential of C (such as low level V L ) is provided by the data line DATA, and the data line DATA provides the reference potential V REF and the data voltage V DATA to the third transistor T3 respectively during the threshold compensation stage and the data writing stage.

图6a所示的具体工作过程为:The specific working process shown in Figure 6a is:

在初始化阶段时,初始化控制信号VIni变为有效电平高电平,将第四晶体管T4置于导通状态,扫描信号VScan和发光控制信号VEM也同时处于有效电平高电平,晶体管T2和T3处于导通状态,数据线DATA上的初始化电位低电平VL同时通过晶体管T4写入到第三节点C中,通过晶体管T3和T2写入到第一节点A和第二节点B中,使三个节点A、B和C的电位同处于低电平VLDuring the initialization phase, the initialization control signal V Ini becomes active high level, and the fourth transistor T4 is placed in a conduction state, and the scanning signal V Scan and the light emission control signal V EM are also at the active high level at the same time. Transistors T2 and T3 are in the conduction state, and the initialization potential low level V L on the data line DATA is simultaneously written into the third node C through the transistor T4, and written into the first node A and the second node through the transistors T3 and T2 In B, the potentials of the three nodes A, B, and C are all at the low level V L .

在阈值补偿阶段时,初始化控制信号VIni变为低电平VL,使第四晶体管T4处于截止状态。扫描信号VScan和发光控制信号VEM继续处于有效电平高电平,数据线DATA输出参考电位VREF,此参考电位通过晶体管T3和T2输入到节点A和B,使得节点A和B电平为VREF。第一电平端VDD通过驱动晶体管T1给节点C充电。其余驱动过程和实施例二相同,此处不再赘述。During the threshold compensation stage, the initialization control signal V Ini becomes low level V L , so that the fourth transistor T4 is in a cut-off state. The scanning signal V Scan and the light-emitting control signal V EM continue to be at the high level of the active level, and the data line DATA outputs the reference potential V REF , which is input to the nodes A and B through the transistors T3 and T2, so that the nodes A and B level for V REF . The first level terminal VDD charges the node C through the driving transistor T1. The rest of the driving process is the same as that of the second embodiment, and will not be repeated here.

相比于实施例二,本实施示例的优点在于少了一根向第四晶体管T4第二极提供初始化电位的电源线,减少了工艺复杂度,简化了结构。Compared with the second embodiment, the advantage of this implementation example is that there is one less power line that provides the initialization potential to the second electrode of the fourth transistor T4, which reduces the complexity of the process and simplifies the structure.

需要说明的是,对于图6b所示的像素电路,其驱动过程与图6a的驱动过程原理相似,不同之处在于,图6b所示像素电路的有效电平为低电平,初始化电位为高电平。在此不再赘述。It should be noted that, for the pixel circuit shown in Figure 6b, its driving process is similar to the driving process principle of Figure 6a, the difference is that the effective level of the pixel circuit shown in Figure 6b is low level, and the initialization potential is high level. I won't repeat them here.

实施例四:Embodiment four:

请参考图8a和图8b,为本实施例公开的像素电路结构图,与上述实施例不同之处在于,第四晶体管T4的控制极连接至第四晶体管T4的第一极;在初始化阶段,第四晶体管T4的控制极所输入的初始化控制信号VIni的有效电平由第四晶体管T4的第一极提供。Please refer to FIG. 8a and FIG. 8b, which are the structure diagrams of the pixel circuit disclosed in this embodiment. The difference from the above embodiments is that the control electrode of the fourth transistor T4 is connected to the first electrode of the fourth transistor T4; in the initialization stage, The active level of the initialization control signal V Ini input by the control electrode of the fourth transistor T4 is provided by the first electrode of the fourth transistor T4 .

请参考图9,为本实施例图8a所示电路的驱动过程时序图,本实施例像素电路的驱动过程与实施例二的驱动过程大致相同,不同之处在于初始化阶段第三节点C电位的提供方式和阈值补偿阶段第四晶体管T4的关闭方式。Please refer to FIG. 9, which is a timing diagram of the driving process of the circuit shown in FIG. 8a in this embodiment. The driving process of the pixel circuit in this embodiment is roughly the same as that in Embodiment 2. Provide mode and turn-off mode of the fourth transistor T4 in the threshold compensation stage.

具体工作过程为:在初始化阶段,第四晶体管T4第二极输入的电位Vx为初始化电位例如低电平,此时,由于第四晶体管T4的控制极连接至其第一极,于是通过二级管连接方式的第四晶体管T4对第三节点C进行放电,从而将第三节点C电位拉低,完成第三节点C电位的初始化。在阈值补偿阶段及后续阶段,第四晶体管T4第二极输入的电位Vx变为高电平,使第四晶体管T4处于截止状态。其余驱动过程和实施例二相同,此处不再赘述。The specific working process is: in the initialization stage, the potential Vx input by the second pole of the fourth transistor T4 is an initialization potential such as a low level. At this time, since the control pole of the fourth transistor T4 is connected to its first pole, the second pole The fourth transistor T4 in the tube connection manner discharges the third node C, thereby pulling down the potential of the third node C, and completing the initialization of the potential of the third node C. In the threshold compensation stage and subsequent stages, the potential Vx input to the second electrode of the fourth transistor T4 becomes a high level, so that the fourth transistor T4 is in a cut-off state. The rest of the driving process is the same as that of the second embodiment, and will not be repeated here.

相比于实施例二,本实施示例的优点在于少了一根电源线,减少了工艺复杂度,简化了结构。Compared with the second embodiment, the advantage of this implementation example is that there is one less power line, which reduces the complexity of the process and simplifies the structure.

需要说明的是,对于图8b所示的像素电路,其驱动过程与图8a的驱动过程原理相似,不同之处在于,图8b所示像素电路的有效电平为低电平,初始化电位为高电平。在此不再赘述。It should be noted that, for the pixel circuit shown in Figure 8b, its driving process is similar to the driving process principle of Figure 8a, the difference is that the effective level of the pixel circuit shown in Figure 8b is low level, and the initialization potential is high level. I won't repeat them here.

实施例五:Embodiment five:

请参考图10a和图10b,为本实施例公开的一种像素电路结构图,与上述实施例不同之处在于,本实施例公开的像素电路中还包括第五晶体管T5,第一节点A所需的参考电位VREF由第五晶体管T5传输,数据线DATA则只提供数据信号VDATA,从而简化了数据线DATA的时序控制。具体地,像素电路包括:用于串联在第一电平端VDD和第二电平端VSS之间的驱动晶体管T1和发光元件OLED,以及第二晶体管T2、第三晶体管T3、第四晶体管T4、第五晶体管T5和存储电容C1。其中,图10a所示的像素电路中,各晶体管(驱动晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4和第五晶体管T5)为N型薄膜晶体管;图10b所示的像素电路中,各晶体管(驱动晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4和第五晶体管T5)为P型薄膜晶体管。Please refer to FIG. 10a and FIG. 10b, which are a structural diagram of a pixel circuit disclosed in this embodiment. The difference from the above-mentioned embodiment is that the pixel circuit disclosed in this embodiment also includes a fifth transistor T5, and the first node A The required reference potential V REF is transmitted by the fifth transistor T5, and the data line DATA only provides the data signal V DATA , thereby simplifying the timing control of the data line DATA. Specifically, the pixel circuit includes: a drive transistor T1 and a light-emitting element OLED connected in series between the first level terminal VDD and the second level terminal VSS, and a second transistor T2, a third transistor T3, a fourth transistor T4, a second transistor T2, and a second transistor T2. Five transistor T5 and storage capacitor C1. Wherein, in the pixel circuit shown in FIG. 10a, each transistor (driving transistor T1, second transistor T2, third transistor T3, fourth transistor T4, and fifth transistor T5) is an N-type thin film transistor; the pixel shown in FIG. 10b In the circuit, each transistor (driving transistor T1, second transistor T2, third transistor T3, fourth transistor T4 and fifth transistor T5) is a P-type thin film transistor.

驱动晶体管T1的第一极连接至发光元件OLED的第一端形成第三节点C,驱动晶体管T1的第二极和发光元件OLED的第二端分别用于连接至第一电平端VDD和第二电平端VSS。在一种实施例中,请参考图10a,发光元件OLED的第一端为阳极,发光元件OLED的第二端为阴极;驱动晶体管T1的第二极用于连接至第一电平端VDD,发光元件OLED的第二端用于连接至第二电平端VSS。在另一种实施例中,请参考图10b,发光元件OLED的第一端为阴极,发光元件OLED的第二端为阳极;驱动晶体管T1的第二极用于连接至第二电平端VSS,发光元件OLED的第二端用于连接至第一电平端VDD。The first pole of the driving transistor T1 is connected to the first end of the light-emitting element OLED to form a third node C, and the second pole of the driving transistor T1 and the second end of the light-emitting element OLED are respectively used to connect to the first level terminal VDD and the second Level terminal VSS. In one embodiment, please refer to FIG. 10a, the first terminal of the light-emitting element OLED is an anode, and the second terminal of the light-emitting element OLED is a cathode; the second electrode of the driving transistor T1 is used to connect to the first level terminal VDD to emit light The second terminal of the OLED is used to be connected to the second level terminal VSS. In another embodiment, please refer to FIG. 10b, the first terminal of the light-emitting element OLED is a cathode, and the second terminal of the light-emitting element OLED is an anode; the second pole of the driving transistor T1 is used to connect to the second level terminal VSS, The second end of the light emitting element OLED is used to be connected to the first level end VDD.

驱动晶体管T1的控制极连接至第二晶体管T2的第一极形成第一节点A,第二晶体管T2的第二极连接至第三晶体管T3的第一极形成第二节点B,第二晶体管T2的控制极用于输入发光控制信号VEMThe control electrode of the driving transistor T1 is connected to the first electrode of the second transistor T2 to form a first node A, the second electrode of the second transistor T2 is connected to the first electrode of the third transistor T3 to form a second node B, and the second transistor T2 The control pole of is used to input the light-emitting control signal V EM .

第三晶体管T3的第二极用于连接至数据线DATA,在具体实施例中,数据线DATA用于提供数据信号VDATA,第三晶体管T3的控制极用于输入扫描信号VScanThe second electrode of the third transistor T3 is used to connect to the data line DATA. In a specific embodiment, the data line DATA is used to provide the data signal V DATA , and the control electrode of the third transistor T3 is used to input the scan signal V Scan .

第五晶体管T5的第一极连接至第一节点A,第五晶体管T5的第二极用于输入参考电位VREF,第五晶体管T5的控制极连接至第三晶体管T3的控制极。The first terminal of the fifth transistor T5 is connected to the first node A, the second terminal of the fifth transistor T5 is used for inputting the reference potential V REF , and the control terminal of the fifth transistor T5 is connected to the control terminal of the third transistor T3.

第四晶体管T4的第一极连接至第三节点C,第四晶体管T4的第二极用于输入初始化电位,第四晶体管T4的控制极用于输入初始化控制信号VIniA first electrode of the fourth transistor T4 is connected to the third node C, a second electrode of the fourth transistor T4 is used for inputting an initialization potential, and a control electrode of the fourth transistor T4 is used for inputting an initialization control signal V Ini .

存储电容C1连接至第二节点B和第三节点C之间。The storage capacitor C1 is connected between the second node B and the third node C.

在具体实施例中,像素电路依次工作于第一阶段、第二阶段和第三阶段。在本实施例中,第一阶段为初始化阶段,第二阶段可以依次包括阈值补偿阶段和数据写入阶段,第三阶段为发光阶段。In a specific embodiment, the pixel circuit works sequentially in the first stage, the second stage and the third stage. In this embodiment, the first stage is an initialization stage, the second stage may sequentially include a threshold compensation stage and a data writing stage, and the third stage is a light emitting stage.

在第一阶段,第四晶体管T4响应初始化控制信号VIni的有效电平导通初始化第三节点C的电位;或者,优选地,在第一阶段,第二晶体管T2还响应发光控制信号VEM的第一有效电平导通初始化第一节点A和第二节点B的电位,并且,发光控制信号VEM的第一有效电平结束时间早于初始化控制信号VIni的有效电平结束时间。In the first stage, the fourth transistor T4 is turned on to initialize the potential of the third node C in response to the active level of the initialization control signal V Ini ; or, preferably, in the first stage, the second transistor T2 also responds to the light emission control signal V EM The first active level of the conduction initializes the potentials of the first node A and the second node B, and the end time of the first active level of the light emission control signal V EM is earlier than the end time of the active level of the initialization control signal V Ini .

在第二阶段,第五晶体管T5和第三晶体管T3响应扫描信号VScan的有效电平导通,导通的第五晶体管T5向第一节点A传输参考电位VREF,导通的第三晶体管T3向第二节点B传输数据信号VDATA;驱动晶体管T1在其控制极电位(例如栅极电位,对应第一节点A的电位)VREF的作用下导通,导通的驱动晶体管T1会传输第一电平端VDD或者第二电平端VSS的电信号以调整(可以是充电,也可以是放电)第三节点C的电位,直到该节点C的电位调整为VREF-VTH时,驱动晶体管T1则进入截止状态,此时,第三节点C的电位就会维持为VREF-VTH,该电位通过存储电容C1存储,其中,VTH为驱动晶体管T1的阈值电压。在第三阶段,第二晶体管T2响应发光控制信号VEM的第二有效电平导通,驱动晶体管T1响应第一节点A的电位导通驱动发光元件OLED发光。In the second stage, the fifth transistor T5 and the third transistor T3 are turned on in response to the active level of the scanning signal V Scan , the turned-on fifth transistor T5 transmits the reference potential V REF to the first node A, and the turned-on third transistor T3 transmits the data signal V DATA to the second node B; the driving transistor T1 is turned on under the action of its control electrode potential (such as the gate potential, corresponding to the potential of the first node A) V REF , and the turned-on driving transistor T1 will transmit The electrical signal of the first level terminal VDD or the second level terminal VSS is used to adjust (could be charging or discharging) the potential of the third node C until the potential of the node C is adjusted to V REF -V TH , the drive transistor T1 enters the cut-off state, and at this time, the potential of the third node C is maintained at V REF -V TH , which is stored by the storage capacitor C1, wherein V TH is the threshold voltage of the driving transistor T1. In the third stage, the second transistor T2 is turned on in response to the second active level of the light emission control signal V EM , and the driving transistor T1 is turned on in response to the potential of the first node A to drive the light emitting element OLED to emit light.

需要说明的是,在一种实施例中,请参考图10a,发光控制信号VEM有效电平(包括第一有效电平和第二有效电平)、初始化控制信号VIni的有效电平和扫描信号VScan的有效电平均为高电平;在另一种实施例中,请参考图10b,发光控制信号VEM的有效电平(包括第一有效电平和第二有效电平)、初始化控制信号VIni的有效电平和扫描信号VScan的有效电平均为低电平。It should be noted that, in one embodiment, please refer to FIG. 10a, the active level of the light emission control signal V EM (including the first active level and the second active level), the active level of the initialization control signal V Ini and the scan signal The effective levels of V Scan are all high levels; in another embodiment, please refer to FIG. Both the active level of V Ini and the active level of the scan signal V Scan are low.

在本实施例中,初始化控制信号VIni、扫描信号VScan的有效电平和发光控制信号VEM的第二有效电平依次到来。In this embodiment, the initialization control signal V Ini , the active level of the scan signal V Scan and the second active level of the light emission control signal V EM come sequentially.

由于初始化控制信号VIni的有效电平超前于扫描信号VScan的有效电平到来时间,因此,当存在多行像素电路,并逐行发光时,第四晶体管T4控制极所输入的初始化控制信号VIni可以优选由上一级像素电路的扫描信号VScan提供,即本行像素电路第四晶体管T4控制极可以优选耦合至上一行像素电路第三晶体管T3的控制极。Since the effective level of the initialization control signal V Ini is ahead of the arrival time of the effective level of the scanning signal V Scan , when there are multiple rows of pixel circuits and emit light row by row, the initialization control signal input by the control electrode of the fourth transistor T4 V Ini can preferably be provided by the scanning signal V Scan of the upper pixel circuit, that is, the control electrode of the fourth transistor T4 of the pixel circuit in the current row can preferably be coupled to the control electrode of the third transistor T3 of the upper pixel circuit.

下文以图10a为例对本实施例公开的像素电路驱动过程予以说明。本实施例的像素电路驱动过程分为初始化阶段、阈值补偿阶段、数据写入阶段和发光阶段,如图11所示为本实施例的信号时序,结合图11和图10a具体描述本实施例的驱动过程。The driving process of the pixel circuit disclosed in this embodiment will be described below by taking FIG. 10a as an example. The driving process of the pixel circuit in this embodiment is divided into an initialization stage, a threshold compensation stage, a data writing stage and a light emitting stage, as shown in FIG. 11 is the signal timing of this embodiment, and the details of this embodiment are described in conjunction with FIG. 11 and FIG. 10a drive process.

在初始化阶段:初始化控制信号VIni为有效电平高电平,将第四晶体管T4置于导通状态,第四晶体管T4的第二极输入初始化电位低电平VL,并通过导通的第四晶体管T4写入到第三节点C中。于是,第三节点C的电位降为初始化电位低电平VL,在存储电容C1的耦合下,第二节点B的电位也拉低。在优选的实施例中,在刚进入初始化阶段时,发光控制信号VEM可以为有效电平高电平,在进入初始化阶段延迟一段时间之后,发光控制信号VEM变为低电平。在发光控制信号VEM为有效电平高电平时,第三节点C可以通过存储电容C1的耦合作用将第一节点A和第二节点B的电位拉低,拉低第一节点A的电位可以防止有大电流流过发光元件OLED。In the initialization phase: the initialization control signal V Ini is at an active high level, and the fourth transistor T4 is placed in a conduction state, and the second pole of the fourth transistor T4 inputs the initialization potential low level V L , and passes the conduction The fourth transistor T4 writes into the third node C. Therefore, the potential of the third node C drops to the low level V L of the initialization potential, and under the coupling of the storage capacitor C1 , the potential of the second node B is also pulled down. In a preferred embodiment, when just entering the initialization phase, the light emission control signal V EM may be at an active high level, and after entering the initialization phase after a delay for a period of time, the light emission control signal V EM becomes a low level. When the light emission control signal V EM is at an effective high level, the third node C can pull down the potentials of the first node A and the second node B through the coupling effect of the storage capacitor C1, and pulling down the potential of the first node A can Prevent a large current from flowing through the light emitting element OLED.

在数据写入和阈值补偿阶段:初始化控制信号VIni变为低电平,使第四晶体管T4处于截止状态;扫描信号VScan变为有效电平高电平,使晶体管T3和T5处于导通状态,第五晶体管T5第二极输入的参考电位VREF通过导通的第五晶体管T5写入到第一节点A中,数据线DATA提供的数据电压VDATA通过第三晶体管T3写入到第二节点B中。与此同时,驱动晶体管T1处于导通状态,第一电平端VDD通过驱动晶体管T1给第三节点C充电,因此,第三节点C的电位会慢慢升高,直到它升高到VREF-VTH的时候,驱动晶体管T1会进入截止状态,第三节点C的电位就会维持为VREF-VTH。其中VTH为驱动晶体管T1的阈值电压。数据输入和阈值补偿阶段结束后,驱动晶体管T1的阈值电压信息就通过存储电容C1被存储到节点C上。需要注意的是,VREF-VTH小于发光元件OLED的阈值电压,以保证发光元件OLED在该两个阶段不发光。In the data writing and threshold compensation stage: the initialization control signal V Ini becomes low level, so that the fourth transistor T4 is in the cut-off state; the scanning signal V Scan becomes active level high level, so that the transistors T3 and T5 are turned on state, the reference potential V REF input by the second pole of the fifth transistor T5 is written into the first node A through the turned-on fifth transistor T5, and the data voltage V DATA provided by the data line DATA is written into the first node A through the third transistor T3 Two Node B. At the same time, the drive transistor T1 is in the conduction state, and the first level terminal VDD charges the third node C through the drive transistor T1, so the potential of the third node C will rise slowly until it rises to V REF - When V TH is lower than V TH , the driving transistor T1 will enter the cut-off state, and the potential of the third node C will be maintained at V REF -V TH . Where V TH is the threshold voltage of the driving transistor T1. After the data input and threshold compensation phases are over, the threshold voltage information of the driving transistor T1 is stored on the node C through the storage capacitor C1. It should be noted that V REF -V TH is smaller than the threshold voltage of the light emitting element OLED, so as to ensure that the light emitting element OLED does not emit light in these two stages.

在发光阶段:扫描信号VScan变为低电平,使晶体管T3和T5处于截止状态;发光控制信号VEM变为有效电平高电平,使得第二晶体管T2处于导通状态,此时,发光元件OLED开始发光,并且第三节点C的电位也变为VOLED。VOLED为发光元件OLED在发光时阳极的电位。此时,由于第二节点B和第一节点A通过第二晶体管T2耦合连接,两节点电位相同,节点A(B)由于存储电容C1的耦合作用而变为:In the light-emitting stage: the scanning signal V Scan becomes low level, so that the transistors T3 and T5 are in the cut-off state; the light-emitting control signal V EM becomes the active level high level, so that the second transistor T2 is in the conductive state, at this time, The light emitting element OLED starts to emit light, and the potential of the third node C also becomes V OLED . V OLED is the potential of the anode of the light-emitting element OLED when it emits light. At this time, since the second node B and the first node A are coupled and connected through the second transistor T2, the potentials of the two nodes are the same, and the node A (B) becomes:

VnodeA=VOLED+VDATA-VREF+VTH …(4-1)VnodeA=V OLED +V DATA -V REF +V TH …(4-1)

由(4-1)可以得出,发光阶段流过OLED的电流为:From (4-1), it can be concluded that the current flowing through the OLED during the light-emitting phase is:

其中,μn、Cox、W、L分别为驱动晶体管T1的有效迁移率、单位面积栅电容、沟道宽度和沟道长度。从(4-2)可以看出,最终流过发光元件OLED的电流与驱动晶体管T1的阈值电压以及发光元件OLED本身的阈值电压都无关,从而本示例的像素电路可以很好的补偿显示的不均匀性。Wherein, μ n , C ox , W and L are the effective mobility, the gate capacitance per unit area, the channel width and the channel length of the driving transistor T1 respectively. It can be seen from (4-2) that the current flowing through the light-emitting element OLED has nothing to do with the threshold voltage of the driving transistor T1 and the threshold voltage of the light-emitting element OLED itself, so the pixel circuit in this example can well compensate for the display error. Uniformity.

对于具有多行像素电路的实例中,可以优选采用传统的逐行扫描发光模式,第一电平端VDD是一个恒定电位,各行的扫描信号VScan不需要在某一时刻同时输出高电平或者低电平脉冲。For an example with multiple rows of pixel circuits, the traditional progressive scanning light emitting mode can be preferably used. The first level terminal VDD is a constant potential, and the scanning signal V Scan of each row does not need to output high level or low level at a certain moment. level pulse.

需要说明的是,当各晶体管采用P型薄膜晶体管时,请参考图10b,其驱动过程与图10a的驱动过程相同,不同之处在于:各晶体管导通的有效电平为低电平VL;在初始化阶段,第四晶体管T4的第二极提供高电平,向第三节点C(发光元件OLED的阴极)充电至高电平VHIt should be noted that when the transistors use P-type thin film transistors, please refer to Figure 10b, the driving process is the same as that in Figure 10a, the difference is that the active level of each transistor is the low level V L ; In the initialization phase, the second electrode of the fourth transistor T4 provides a high level to charge the third node C (cathode of the light-emitting element OLED) to a high level V H .

相对于上述实施例,本实施例增加了像素电路驱动时所需的信号线,有利于时序控制。Compared with the above-mentioned embodiments, this embodiment increases the signal lines required for driving the pixel circuit, which is beneficial to timing control.

本实施例还公开了一种显示电路驱动方法,显示电路采用上述实施例的像素电路,像素电路的每一驱动周期包括初始化阶段、阈值补偿阶段、数据写入阶段和发光阶段,驱动方法包括:This embodiment also discloses a display circuit driving method. The display circuit adopts the pixel circuit of the above embodiment. Each driving cycle of the pixel circuit includes an initialization stage, a threshold value compensation stage, a data writing stage and a light emitting stage. The driving method includes:

在初始化阶段,第二晶体管T2导通,分别初始化存储电容C1两端的电位和驱动晶体管T1控制极的电位。在其它实施例中,还可以导通第四晶体管T4,辅助初始化存储电容C1两端的电位。In the initialization phase, the second transistor T2 is turned on, and the potential at both ends of the storage capacitor C1 and the potential at the control electrode of the driving transistor T1 are respectively initialized. In other embodiments, the fourth transistor T4 may also be turned on to assist in initializing the potential at both ends of the storage capacitor C1.

在阈值补偿阶段,第三晶体管T3和/或第五晶体管T5导通,向驱动晶体管T1控制极提供参考电位,读取驱动晶体管T1的阈值电压信息并通过存储电容C1存储。在一种实施例中,可以通过第三晶体管T3提供参考电位;在另一种实施例中,也可以通过第五晶体管T5提供参考电位。In the threshold compensation phase, the third transistor T3 and/or the fifth transistor T5 are turned on to provide a reference potential to the control electrode of the driving transistor T1, read the threshold voltage information of the driving transistor T1 and store it through the storage capacitor C1. In one embodiment, the reference potential can be provided through the third transistor T3; in another embodiment, the reference potential can also be provided through the fifth transistor T5.

在数据写入阶段,第三晶体管T3导通传输数据电压VDATA并存储于存储电容C1。In the data writing phase, the third transistor T3 is turned on to transmit the data voltage V DATA and store it in the storage capacitor C1.

需要说明的是,在具体实施例中,阈值补偿阶段和数据写入阶段也可以同时进行,譬如同时导通第三晶体管T3和第五晶体管T5,由第五晶体管T5提供参考电位,由第三晶体管T3传输数据电压VDATA,从而实现了驱动晶体管T1阈值电压补偿和数据电压VDATA写入的同时进行。It should be noted that, in a specific embodiment, the threshold compensation stage and the data writing stage can also be performed simultaneously, for example, the third transistor T3 and the fifth transistor T5 are turned on at the same time, the fifth transistor T5 provides a reference potential, and the third transistor T5 provides a reference potential. The transistor T3 transmits the data voltage V DATA , so that the compensation of the threshold voltage of the driving transistor T1 and the writing of the data voltage V DATA are realized simultaneously.

在发光阶段,第一晶体管T1根据存储电容C1两端的压差驱动产生驱动电流,并驱动发光元件OLED发光。In the light-emitting phase, the first transistor T1 is driven to generate a driving current according to the voltage difference across the storage capacitor C1, and drives the light-emitting element OLED to emit light.

实施例六:Embodiment six:

本实施例还公开了一种显示装置,请参考图12,为本实施例还公开的显示装置结构原理图,该显示装置包括:This embodiment also discloses a display device. Please refer to FIG. 12 , which is a structural schematic diagram of the display device disclosed in this embodiment. The display device includes:

显示面板100,显示面板100包括排列成n行m列矩阵的上述实施例提供的像素电路Pixel[1][1]……Pixel[n][m],其中,n和m为大于0的整数,Pixel[n][m]表征第n行m列的像素电路;与每个像素相连的第一方向(例如横向)的多条扫描线Gate[1]……Gate[n],其中,Gate[n]表示第n行像素电路对应的扫描线,用于向提供向本行像素电路提供扫描控制信号,例如初始化控制信号VIni、扫描信号VScan、发光控制信号VEM等;和第二方向(例如纵向)的多条数据线Data[1]……Data[m],其中,Data[m]表示第m列像素电路对应的数据线,用于提供各像素电路的数据电压VDATA。显示面板可以是液晶显示面板、有机发光显示面板、电子纸显示面板等,而对应的显示装置可以是液晶显示器、有机发光显示器、电子纸显示器等。需要说明的是,在其它实施例中,像素电路所需的有些扫描控制信号也可以通过全局线的方式来提供,比如第一电平端所需的电源线、初始化控制信号VIni所需的初始化控制线、阈值提取控制线和发光控制线等,本领域技术人员可以依据具体像素电路的需求来调整。The display panel 100, the display panel 100 includes the pixel circuits Pixel[1][1]...Pixel[n][m] provided in the above embodiment arranged in a matrix of n rows and m columns, wherein n and m are integers greater than 0 , Pixel[n][m] characterizes the pixel circuit in the nth row and m column; multiple scan lines Gate[1]...Gate[n] in the first direction (for example, horizontal direction) connected to each pixel, wherein, Gate [n] indicates the scanning line corresponding to the pixel circuit in the nth row, which is used to provide scanning control signals to the pixel circuit in the row, such as initialization control signal V Ini , scanning signal V Scan , light emission control signal V EM , etc.; and the second A plurality of data lines Data[1]...Data[m] in a direction (for example, vertical direction), wherein Data[m] represents the data line corresponding to the pixel circuit in the mth column, and is used to provide the data voltage V DATA of each pixel circuit. The display panel may be a liquid crystal display panel, an organic light emitting display panel, an electronic paper display panel, etc., and the corresponding display device may be a liquid crystal display, an organic light emitting display, an electronic paper display, etc. It should be noted that, in other embodiments, some scanning control signals required by the pixel circuit can also be provided through global lines, such as the power supply line required for the first level end, the initialization required for the initialization control signal V Ini Those skilled in the art can adjust the control line, threshold value extraction control line and light emission control line according to the requirements of specific pixel circuits.

栅极驱动电路200,用于产生扫描脉冲信号,并通过沿第一方向形成的各行扫描线Gate[1]……Gate[n]向像素电路提供所需的控制信号。The gate driving circuit 200 is used for generating scan pulse signals, and providing required control signals to the pixel circuits through each row of scan lines Gate[1]...Gate[n] formed along the first direction.

数据驱动电路300,数据驱动电路300的信号输出端耦合到显示面板100中与其对应的数据线Data[1]……Data[m]上,数据驱动电路300产生的数据电压信号VDATA通过数据线Data[1]……Data[m]传输到对应的像素单元内以实现图像灰度。A data drive circuit 300, the signal output end of the data drive circuit 300 is coupled to the corresponding data lines Data[1]...Data[m] in the display panel 100, and the data voltage signal V DATA generated by the data drive circuit 300 passes through the data lines Data[1]...Data[m] are transmitted to the corresponding pixel unit to achieve image grayscale.

控制器400,控制器400用于向栅极驱动电路和数据驱动电路提供控制时序。The controller 400 is used for providing control timing to the gate driving circuit and the data driving circuit.

以上应用了具体个例对本发明进行阐述,只是用于帮助理解本发明,并不用以限制本发明。对于本发明所属技术领域的技术人员,依据本发明的思想,还可以做出若干简单推演、变形或替换。The above uses specific examples to illustrate the present invention, which is only used to help understand the present invention, and is not intended to limit the present invention. For those skilled in the technical field to which the present invention belongs, some simple deduction, deformation or replacement can also be made according to the idea of the present invention.

Claims (8)

1. A pixel circuit, comprising:
a driving transistor (T1) and a light emitting element (OLED) for being connected in series between a first level terminal (VDD) and a second level terminal (VSS), and a second transistor (T2), a third transistor (T3) and a storage capacitor (C1);
a first pole of the driving transistor (T1) is connected to a first terminal of the light emitting element (OLED) to form a third node (C), and a second pole of the driving transistor (T1) and a second terminal of the light emitting element (OLED) are respectively for connection to the first level terminal (VDD) and the second level terminal (VSS);
a control electrode of the driving transistor (T1) is connected to a first electrode of the second transistor (T2) to form a first node (a), a second electrode of the second transistor (T2) is connected to a first electrode of the third transistor (T3) to form a second node (B), and a control electrode of the second transistor (T2) is used for inputting the light emission control signal (V) to the display panelEM);
A second pole of the third transistor (T3) is coupled to provide the data signal (V)DATA) Or a reference potential (V)REF) And a control electrode of the third transistor (T3) for inputting the scan signal (V)Scan);
A storage capacitor (C1) is connected between the second node (B) and the third node (C);
in the first stage, the second transistor (T2) and the third transistor (T3) are respectively responsive to the light emission control signal (V)EM) And the first active level of (V) and the scanning signal (V)Scan) Is turned on, and transmits a reference potential (V) to the first node (A) and the second node (B)REF) Initializing potentials of the first node (A) and the second node (B), supplying the initialization potential to the third node (C) through corresponding signal sources, and reading a threshold voltage (V1) of the driving transistor (T1)TH);
In the second stage, the second transistor (T2) is controlled by the light emission control signal (V)EM) Controlled to be in an off state, the third transistor (T3) responds to the scan signal (V)Scan) To a second node (B) for transmitting a data signal (V)DATA);
In the third stage, the third transistor (T3) is driven by the scan signal (V)Scan) Controlled to be in an off state, the second transistor (T2) responds to the light emission control signal (V)EM) The driving transistor (T1) is turned on in response to the potential of the first node (a) to drive the light emitting element (OLED) to emit light.
2. The pixel circuit of claim 1, wherein the first stage comprises, in order: an initialization stage and a threshold compensation stage;
a second pole of the driving transistor (T1) is connected to the first level terminal (VDD), a second pole of the light emitting element (OLED)A terminal for connection to a second level terminal (VSS); in the initialization phase, the second pole of the driving transistor (T1) transmits the initialization potential of the first level terminal (VDD) to initialize the potential of the third node (C); in the threshold compensation phase, the second pole of the driving transistor (T1) transmits the active level of the first level terminal (VDD), and the storage capacitor (C1) reads the threshold voltage (V1) of the driving transistor (T1) according to the potential of the second node (B) and the potential of the third node (C)TH) (ii) a Or,
a second terminal of the driving transistor (T1) is for connection to the second level terminal (VSS), and a second terminal of the light emitting element (OLED) is for connection to the first level terminal (VDD); in the initialization phase, the second pole of the driving transistor (T1) transmits the initialization potential of the second level terminal (VSS) to initialize the potential of the third node (C); in the threshold compensation phase, the second pole of the driving transistor (T1) transmits the active level of the second level terminal (VSS), and the storage capacitor (C1) reads the threshold voltage (V1) of the driving transistor (T1) according to the potential of the second node (B) and the potential of the third node (C)TH)。
3. A pixel circuit as claimed in claim 1, further comprising a fourth transistor (T4), the first stage comprising in sequence: an initialization stage and a threshold compensation stage;
a first pole of the fourth transistor (T4) is connected to the third node (C), a second pole of the fourth transistor (T4) is used for inputting an initialization potential, and a control pole of the fourth transistor (T4) is used for inputting an initialization control signal (V)Ini);
In the initialization phase, the fourth transistor (T4) responds to the initialization control signal (V)Ini) Is turned on, the initialization potential of the second pole input of the fourth transistor (T4) is transferred to the third node (C).
4. The pixel circuit according to claim 3, wherein the driving transistor (T1), the second transistor (T2), the third transistor (T3), and the fourth transistor (T4) are N-type thin film transistors;
a second terminal of the driving transistor (T1) for connecting to the first level terminal (VDD), and a second terminal of the light emitting element (OLED) for connecting to the second level terminal (VSS);
a second pole of the fourth transistor (T4) is connected to the second level terminal (VSS), and the initialization potential inputted to the second pole of the fourth transistor (T4) is provided by the second level terminal (VSS) during the initialization phase; or,
the second pole of the fourth transistor (T4) is used to connect to the DATA line (DATA), and the initialization potential of the second pole input of the fourth transistor (T4) is provided by the DATA line (DATA) during the initialization phase.
5. The pixel circuit according to claim 3, wherein the driving transistor (T1), the second transistor (T2), the third transistor (T3), and the fourth transistor (T4) are P-type thin film transistors;
a second terminal of the driving transistor (T1) is for connection to the second level terminal (VSS), and a second terminal of the light emitting element (OLED) is for connection to the first level terminal (VDD);
a second pole of the fourth transistor (T4) is connected to the first level terminal (VDD), and an initialization potential of a second pole input of the fourth transistor (T4) is provided by the first level terminal (VDD) during an initialization phase; or,
the second pole of the fourth transistor (T4) is used to connect to the DATA line (DATA), and the initialization potential of the second pole input of the fourth transistor (T4) is provided by the DATA line (DATA) during the initialization phase.
6. A pixel circuit according to any one of claims 3-5, wherein a control electrode of the fourth transistor (T4) is connected to the first electrode of the fourth transistor (T4); in the initialization phase, an initialization control signal (V) is inputted to the gate of the fourth transistor (T4)Ini) Is provided by the first pole of the fourth transistor (T4).
7. A display device, comprising:
a pixel circuit matrix comprising pixel circuits according to any of claims 1-6 arranged in a matrix of n rows and m columns, n and m being integers greater than 0;
a gate driving circuit for generating a scan pulse signal and supplying a required control signal to the pixel circuit through each row scan line formed in a first direction;
a data driving circuit for generating data voltage signals representing gray scale information and supplying the data signals to the pixel circuits through the data lines formed in the second direction;
and a controller for providing control timing to the gate driving circuit and the data driving circuit.
8. A pixel circuit driving method for the pixel circuit according to any one of claims 1 to 6, wherein each driving period of the pixel circuit includes an initialization phase, a threshold compensation phase, a data writing phase, and a light emission phase, the driving method comprising:
in the initialization phase, the second transistor (T2) is conducted, and the potential of the two ends of the storage capacitor (C1) and the potential of the control electrode of the driving transistor (T1) are respectively initialized;
in the threshold compensation phase, the third transistor (T3) and/or the fifth transistor (T5) are/is turned on, a reference potential is provided for a control electrode of the driving transistor (T1), and threshold voltage information of the driving transistor (T1) is read and stored through the storage capacitor (C1);
the third transistor (T3) turns on the transmission data voltage V in the data writing phaseDATAAnd stored in a storage capacitor (C1);
in the light emitting stage, the first transistor (T1) generates a driving current according to a voltage difference driving across the storage capacitor (C1), and drives the light emitting element (OLED) to emit light.
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