CN104698767A - Liquid control device of immersion type lithography machine - Google Patents
Liquid control device of immersion type lithography machine Download PDFInfo
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- CN104698767A CN104698767A CN201310671750.7A CN201310671750A CN104698767A CN 104698767 A CN104698767 A CN 104698767A CN 201310671750 A CN201310671750 A CN 201310671750A CN 104698767 A CN104698767 A CN 104698767A
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Abstract
The invention relates to a liquid control device of an immersion type lithography machine, which is applied to the immersion type lithography machine. The liquid control device comprises a liquid maintaining device and an assisted liquid maintaining device, the liquid maintaining device is arranged under the last objective lens and comprises a check block, the check block can define a cavity matched with the last objective lens in shape, a horizontal liquid inlet, a horizontal liquid outlet, a vertical liquid inlet and a vertical extraction opening are formed on the check block, the horizontal liquid inlet corresponds to the side edge of the last objective lens in position, the horizontal liquid outlet and the horizontal liquid inlet are symmetrically arranged, the vertical liquid inlet penetrates into the bottom of the check block, the vertical extraction opening penetrates into the bottom of the check block, and a distance from the vertical extraction opening to the center of the cavity is more than a distance from the vertical liquid inlet to the center of the cavity; the assisted liquid maintaining device is arranged between a substrate and a substrate base for bearing the substrate, covers the substrate base and comprises a gas supplying channel communicated with a first gas cavity, a vacuum supplying channel communicated with a second gas cavity, and the first gas cavity and the second gas cavity re communicated by a first gap. The liquid control device of the immersion type lithography machine can effectively prevent immersion liquid from leakage.
Description
Technical field
The present invention relates to lithographic equipment field, particularly relate to a kind of liquid control device of immersed photoetching machine.
Background technology
Modern semiconductors IC manufacturing is based on optical lithography equipment, and it utilizes optical system that the integrated circuit pattern on mask is accurately projected on the target area of silicon chip.Lithographic equipment generally comprises light-source system, objective system, reticle stage system, alignment system, workpiece table system etc., and such as, lithographic equipment may be used in the manufacture of integrated circuit.In this case, can be described as mask, the patterning apparatus of graticule may be used for producing the circuitous pattern that will be formed on integrated circuit individual layer, this figure can transfer to substrate (such as, silicon wafer) on target part (such as, comprise the part of part, one or more tube core) on, usually by carrying out transition diagram being provided in imaging on the radiation-sensitive materials on substrate (resist) layer.Usually, single substrate comprises the network of the adjacent target portions of composition successively, known lithographic equipment comprises by by the so-called stepper of each target part of whole figure single exposure radiation on target part with by carrying out by radiation beam scanning patter the so-called scanner that each target part of radiation is synchronously parallel or anti-parallel to this scanning direction substrate on assigned direction (" scanning " direction) simultaneously, on substrate, figure can also be transferred to substrate from patterning apparatus by being marked by figure.
Need immersion lithographic system for immersion lithographic apparatus, present immersion lithographic apparatus generally uses 193nm light source, can realize the manufacture of 45nm node and following integrated circuit.Immersion lithographic system fills immersion liquid (usually adopting the ultrapure water of special processing) in the gap between the last a slice object lens of camera lens and substrate, increases the numerical aperture of lens, improve resolution and depth of focus, to obtain less characteristic dimension with this.Immersion lithographic system is realizing can adopting in two ways when filling immersion liquid in the gap between camera lens last a slice object lens and substrate: one is full immersion, is immersed in immersion liquid by whole substrate or substrate table and last a slice object lens; Another kind is local submergence, fills immersion liquid in the gap only in the end between a slice object lens and substrate.For full immersion mode, must be accelerated having a large amount of immersion liquid in surface sweeping exposure process, very high to the requirement of sports platform motor like this, and uncertain eddy current etc. will be produced in immersion liquid during sports platform motion, therefore immersion lithographic apparatus many employing local submergences mode.And need to maintain the immersion liquid in gap in local submergence mode, prevent submergence immersion liquid from leaking.
To local liquid immersion lithography, when carrying out edges of substrate exposure, the leakage of immersion liquid can be caused, leaking immersion liquid and may produce following impact to substrate table and substrate lower surface:
If 1, immersion liquid sticks to substrate lower surface, the evaporation of immersion liquid will cause the thermal deformation of edges of substrate, thus produce overlay error;
2, will adhesion effect be produced in the immersion liquid of substrate lower surface, and make substrate stick on substrate table, be unfavorable for that substrate exchanges;
3, the drop remaining in substrate surface may affect normally carrying out of subsequent handling;
4, the watermark etc. that the immersion liquid evaporation of substrate surface produces contains contaminant particles, and this will bring pollution to substrate table.
Summary of the invention
The invention provides a kind of liquid control device of immersed photoetching machine, carry out to solve immersed photoetching machine the problem that when edges of substrate exposes, immersion liquid is leaked.
For solving the problems of the technologies described above, the invention provides a kind of liquid control device of immersed photoetching machine, being applied in immersed photoetching machine, comprise liquid-retentive device and auxiliary liquid holdout device, wherein,
Described liquid-retentive device is located at the below of last a slice object lens, and it comprises block, and described block surrounds a cavity, and described block is provided with:
Horizontal inlet, corresponding with the position of the side of described last a slice object lens, in described cavity, fill immersion liquid;
Horizontal liquid outlet, is symmetrical arranged with described horizontal inlet;
Vertical extraction opening, passes to the bottom of described block;
Described auxiliary liquid holdout device is located between substrate and the substrate table of carrier substrate, and covers described substrate table, comprising:
Gas supplying passage, is communicated with the first air cavity;
Vacuum feed passage, is communicated with the second air cavity;
By the first gap conducting between described first air cavity and described second air cavity.
Preferably, also comprise gas supply device and vacuum feed device, one end of described gas supplying passage is communicated with described first air cavity, and the other end is connected with described gas supply device; One end of described vacuum feed passage is communicated with described second air cavity, and the other end is connected with described vacuum feed device.
Preferably, described block also comprises the vertical inlet of the bottom passing to described block, described vertical extraction opening and the distance at the center of described cavity are greater than the distance at the center of described vertical inlet and described cavity.
Preferably, described horizontal liquid outlet is gas-liquid two-phase recovery port with vertical extraction opening.
Preferably, the edge of described auxiliary liquid holdout device is provided with a boss, and described second air cavity is connected with described boss through the second gap.
Preferably, the distance between the madial wall of described boss and the edge of described substrate is 200 μm ~ 300 μm.
Preferably, the difference in height between the upper surface of described substrate and the upper surface of described boss is less than 10 μm.
Preferably, the madial wall of described boss and the distance at adsorbent equipment center are 150.2mm ~ 150.3mm.
Preferably, the height in described second gap is 20 μm ~ 30 μm, and the length in described second gap is 2mm ~ 3mm.
Preferably, described gas supplying passage and vacuum feed passage are provided with multiple segmental structure.
Preferably, the length of described gas supplying passage and vacuum feed passage is divided into 12 ~ 15 sections by described multiple segmental structure.
Preferably, described auxiliary liquid holdout device is provided with height adjustment mechanism.
Preferably, described height adjustment mechanism adopts air supporting motor or magnetic to float motor driving.
Preferably, gas flow guiding blade is provided with in described first air cavity.
Preferably, the angle of described gas supplying passage and vertical direction is 30 ° ~ 60 °.
Preferably, the height in described first gap is 50 μm ~ 100 μm, and the length in described first gap is 3mm ~ 5mm.
Preferably, the pressure in described first air cavity is at more than 4000Pa, and the pressure in described second air cavity is below-1000Pa.
The liquid control device of immersed photoetching machine provided by the invention, has the following advantages compared to prior art tool:
1, liquid-retentive device combines with auxiliary liquid holdout device, avoids the immersion liquid of edges of substrate to leak the adverse effect brought;
2, utilize auxiliary liquid holdout device to form air-flow at edges of substrate lower surface, stop immersion liquid to stick to substrate lower surface;
3, utilize segmental structure that edges of substrate is punished into some regions, thus improve gas to the removal ability adhering to drop.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of immersed photoetching machine;
Fig. 2 is the structural representation of the liquid control device of the immersed photoetching machine of the embodiment of the invention;
Fig. 3 is the structural representation of liquid-retentive device in the liquid control device of the immersed photoetching machine of the embodiment of the invention;
Fig. 4 is the vertical view of auxiliary liquid holdout device in the liquid control device of the immersed photoetching machine of the embodiment of the invention;
Fig. 5 is the structural representation of auxiliary liquid holdout device in the liquid control device of the immersed photoetching machine of the embodiment of the present invention 1;
Fig. 6 is the schematic diagram of segmental structure in the liquid control device of the immersed photoetching machine of the embodiment of the present invention 1;
Fig. 7 is the structural representation of auxiliary liquid holdout device in the liquid control device of the immersed photoetching machine of the embodiment of the present invention 2;
Fig. 8 is the structural representation of auxiliary liquid holdout device in the liquid control device of the immersed photoetching machine of the embodiment of the present invention 3.
In figure: the last a slice object lens of 110-light source, 120-mask platform, 130-object lens, 131-, 140-alignment system, 150-liquid control device, 160-substrate table, 161-substrate, 162-adsorbent equipment;
200-liquid-retentive device, 210-block, the horizontal inlet of 211-, the horizontal liquid outlet of 212-, the vertical inlet of 213-, the vertical extraction opening of 214-, 220-cavity;
300-auxiliary liquid holdout device, 310-gas supplying passage, 311-first air cavity, 320-vacuum feed passage, 321-second air cavity, 330-first gap, 340-second gap, 350-boss, 360-segmental structure, 370-gas flow guiding blade.
Embodiment
In order to the technical scheme of more detailed statement foregoing invention, below list specific embodiment and carry out Proof Technology effect; It is emphasized that these embodiments are not limited to for illustration of the present invention limit the scope of the invention.
Please refer to Fig. 1 and Fig. 2, the liquid control device 150 of immersed photoetching machine provided by the invention, be applied in immersed photoetching machine, described litho machine comprises: light source 110, for litho machine provides exposure light source, concrete, described light source 110 is laser instrument, and the wavelength of the light that described light source 110 sends is 365nm, 248nm, 193nm, 157nm or 128nm etc., mask platform 120, provides the mask graph needed for photoetching, substrate 161, be positioned on substrate table 160, adsorbed by adsorbent equipment 162, mask graph in mask platform 120 is transferred on described substrate 161 through object lens 130, alignment system 140 adjusts the position relationship of mask and substrate 161, substrate table 160 drives substrate 161 to scan or step motion, finally complete photolithographic exposure process, liquid control device 150 is by a liquid partially submerged for the exposure area on substrate 161, the immersion liquid at substrate 161 edge is avoided to leak, avoid substrate 161 to adhere to the surface of substrate table 160 simultaneously, thus the adverse effect that the immersion liquid eliminating edges of substrate brings.
Embodiment 1
The liquid control device 150 of immersed photoetching machine of the present invention, please refer to Fig. 2, comprise liquid-retentive device 200 and auxiliary liquid holdout device 300, particularly, described liquid-retentive device 200 is located between last a slice object lens 131 and substrate 161, described auxiliary liquid holdout device 300 is located between described substrate 161 and substrate table 160, wherein
Please emphasis with reference to figure 3, described liquid-retentive device 200 is located at the below of last a slice object lens 131, preferably, distance between described liquid-retentive device 200 and described substrate 161 is 50 μm ~ 200 μm, that is, the distance between the upper surface of described substrate 161 and the lower surface of described liquid-retentive device 200 is 50 μm ~ 200 μm.Particularly, described liquid-retentive device 200 comprises block 210, described block 210 surrounds cavity 220, preferably, the mating shapes of described cavity 220 and last a slice object lens 131, preferably, the distance between described liquid-retentive device 200 and described last a slice object lens 131 is 1mm ~ 4mm, that is, the gap of 1mm ~ 4mm is left between described liquid-retentive device 200 and described last a slice object lens 131.Particularly, described block 210 is provided with:
Horizontal inlet 211, corresponding with the position of the side of described last a slice object lens 131, in described cavity 220, fill immersion liquid, preferably, described immersion liquid is the liquid of high index of refraction, such as water;
Horizontal liquid outlet 212, be symmetrical arranged relative to described last a slice object lens 131 with described horizontal inlet 211, that is, described horizontal liquid outlet 212 is arranged at the opposite of described horizontal inlet 211, height is identical with horizontal inlet 211, the immersion liquid exceeding described horizontal liquid outlet 212 is derived from horizontal liquid outlet 212 by described horizontal liquid outlet 212, avoiding immersion liquid to fill excessively causes immersion liquid to be overflowed above liquid-retentive device 200, preferably, described horizontal liquid outlet 212 is gas-liquid two-phase recovery port, that is, gas can be allowed simultaneously, liquid passes through;
Vertical inlet 213, passes to the bottom of described block 210, is also to be symmetrical arranged relative to described last a slice object lens 131, prevents from, in substrate table 160 motion process, occurring liquid-containing air white region below described liquid-retentive device 200.According to different substrate 161 movement velocitys, the fluid flow (i.e. vertical feed liquor flow) at described vertical inlet 213 place is as shown in table 1.
Table 1
Vertical extraction opening 214, also the bottom of described block 210 is passed to, preferably, described vertical extraction opening 214 and the distance at the center of described cavity 220 are greater than the distance at the center of described vertical inlet 213 and described cavity 220, that is, on the bottom surface of block 210, described vertical extraction opening 214 is positioned at the periphery of described vertical inlet 213, preferably, described vertical extraction opening 214 is also gas-liquid two-phase recovery port; Liquid-retentive mainly relies on described vertical extraction opening 214 to realize, much larger than liquid volume flow of volumetric flow of gas here, mainly relies on shearing effect between gas flowing and liquid flow by Liquid extracting.The gas flow needed can be calculated herein by liquid flow velocity.
Wherein, ρ
airfor gas density, be 1.25kg/m herein
3; v
airfor gas flow rate; ρ
waterfor immersion liquid (water) density, be 1000kg/m herein
3; p
staticfor static pressure, be definite value under environment fixing situation; ν
waterfor the radial flow rate of liquid between object lens 131 and substrate 161, actual is exactly substrate motion speed, and concrete numerical value refers to table 1; Can show that gas mean velocity range is 16.06m/s ~ 30.98m/s according to above-mentioned formula, the volumetric flow rates of gas can be obtained thus, as shown in table 2, it can thus be appreciated that, different according to the movement velocity of substrate 161, choose corresponding gas flow, namely control the gas flow of described vertical extraction opening 214, the control of liquid-retentive device 200 pairs of immersion liquid can be realized, prevent immersion liquid from leaking.
Table 2
Please emphasis with reference to figure 5, described auxiliary liquid holdout device 300 is located between the substrate table 160 of substrate 161 and carrier substrate 161, and cover described substrate table 160, leave the slightly large space of size at substrate 161 marginal position and each sensor position, described auxiliary liquid holdout device 300 comprises:
Gas supplying passage 310, is communicated with the first air cavity 311, and supply gas in described first air cavity 311, forms one section of gas, intercepts immersion liquid and enters in described first air cavity 311;
Vacuum feed passage 320, is communicated with the second air cavity 321, provides vacuum to described second air cavity 321;
By the first gap 330 conducting between described first air cavity 311 and described second air cavity 321, particularly, in Fig. 2, the direction of arrow is gas flow direction, can effectively stop immersion liquid radially inwardly to be flowed to substrate 161 lower surface.
Preferably, described auxiliary liquid holdout device 300 also comprises gas supply device and vacuum feed device (not shown), and one end of described gas supplying passage 310 is communicated with described first air cavity 311, and the other end is connected with described gas supply device; One end of described vacuum feed passage 320 is communicated with described second air cavity 321, and the other end is connected with described vacuum feed device.
Preferably, please continue to refer to Fig. 5, and composition graphs 2, the edge of described auxiliary liquid holdout device 300 is provided with a boss 350, and described second air cavity 321 is connected with described boss 350 through the second gap 340.Preferably, the distance d(between the madial wall of described boss 350 and the edge of described substrate 161 is shown in Fig. 4 and Fig. 5) be 200 μm ~ 300 μm.
Preferably, please continue to refer to Fig. 5, difference in height between the upper surface of described substrate 161 and the upper surface of described boss 350 is less than 20 μm, expectation value is for being less than 10 μm, and certainly, the best is that the upper surface of the upper surface of substrate 161 and described boss 350 is coplanar, like this, when immersion liquid is in substrate 161 edge, due to the effect of surface tension of liquid, relatively large immersion liquid can not be caused to be flowed downward by the space between boss 350 and substrate 161.Preferably, for guarantee substrate 161 upper surface and boss 350 upper surface coplanar, can rational height governor motion (not shown) on described auxiliary liquid holdout device 300, described height adjustment mechanism adopts air supporting motor, magnetic floats the drivings such as motor, sees Fig. 5 in order to regulate the height h(of boss 350).
Preferably, the madial wall of described boss 350 and the distance at adsorbent equipment 162 center are 150.2mm ~ 150.3mm, that is: 150mm+(200 μm ~ 300 μm), consider that described substrate 161 radius error is about 100 μm, the distance at the madial wall of boss 350 and adsorbent equipment 162 center is set to 150mm+(200 μm ~ 300 μm), can the error of compatible substrate 161.
Preferably, please continue to refer to Fig. 5, the height d in described first gap 330
1be 50 μm ~ 100 μm, the length l in described first gap 330
1for 3mm ~ 5mm; The height d in described second gap 340
2be 20 μm ~ 30 μm, the length l in described second gap 340
2for 2mm ~ 3mm.
According to formula
Wherein v is flow rate of liquid in gap, and d is clearance height, and l is gap length, and μ is hydrodynamic viscosity, Δ
pbe the pressure reduction between the first gap 330 and the second gap 340.Expect, controlling Liquid extracting flow velocity is 0.2m/s ~ 0.5m/s, as shown from the above formula:
The height d2 in described second gap 340 and the second gap 340 length l
2relation meet
In like manner, for the first gap 330, need to prevent immersion liquid from here to substrate 161 lower surface intermediate flow, therefore need to provide larger relaxation length l
1, simultaneously in order to make gas according to direction flowing as shown in Figure 2, compared to the height d in the second gap 340
2, need the height d in increase by first gap 330
1, only have gas by time, expect that gas flow rate is at 5m/s ~ 10m/s.Therefore, described first gap 330 demand fulfillment is set
Preferably, please emphasis with reference to figure 6, overlook described substrate table 160, described gas supplying passage 310, first air cavity 311, first gap 330, vacuum feed passage 320 and the second air cavity 321 are the ring texture on substrate table 160 surface, in order to make less being extracted by vacuum feed passage 320 of immersion liquid, described gas supplying passage 310 and vacuum feed passage 320 are provided with multiple segmental structure 360, the length of described gas supplying passage 310 and vacuum feed passage 320 is divided into 12 ~ 15 sections by described multiple segmental structure 360 respectively, Figure 6 shows that and be divided into 12 sections, the length of every section is greater than the diameter of liquid field, the liquid field that makes that can be more remains in independent one section, can ensure that the gas flowing of every section is comparatively all even stable simultaneously, in the present embodiment, extract flow to expect to be arranged on 0 ~ 0.3L/min.
In addition, the pressure in described first air cavity 311 and the second air cavity 321 arranges the surface tension and capillary action that need to consider liquid surface.Formula is as follows:
wherein σ is the radius-of-curvature of surface tension coefficient, d, elects the size in the first gap 330 or the second gap 340 here as, and Δ p is the pressure reduction between the first gap 330 and the second gap 340.
According to above-mentioned formula, pressure in described first air cavity 311 is at more than 4000Pa, pressure in described second air cavity 321 is below-1000Pa, be recommended as, in described first air cavity, the pressure of 311 is 4000Pa ~ 5000Pa, and the pressure in described second air cavity 321 is-1000Pa ~-1500Pa.It should be noted that, described pressure is the difference of absolute pressure and atmospheric pressure.Like this, utilize the gas supplying passage 310 in auxiliary liquid holdout device 300 and vacuum feed passage 320 to form air-flow at substrate 161 lower surface, prevent substrate 161 because immersion liquid sticky adhesive is on substrate table 160.
Embodiment 2
Please emphasis with reference to figure 7, the difference of the present embodiment and embodiment 1 is: be provided with gas flow guiding blade 370 in described first air cavity 311.Make gas according to the direction of described gas flow guiding blade 370 to substrate 161 edge flowing, prevent air-flow to the impulsive force of substrate 161.
Embodiment 3
Please emphasis with reference to figure 8, the difference of the present embodiment and embodiment 1 or embodiment 2 is: described gas supplying passage 310 is 30 ° ~ 60 ° with the angle of vertical direction.Gas is entered in the first air cavity 311 and the first gap 330 according to the direction at 30 ° ~ 60 ° of pitch angle, thus to substrate 161 edge flowing, the vacuum of adsorbent equipment 162 bottom substrate 161 can not be destroyed.
In sum, the liquid control device 150 of immersed photoetching machine provided by the invention, be applied in immersed photoetching machine, comprise liquid-retentive device 200 and auxiliary liquid holdout device 300, wherein, described liquid-retentive device 200 is located at the below of last a slice object lens 131, it comprises block 210, and described block 210 surrounds cavity 220, and described block 210 is provided with: horizontal inlet 211, corresponding with the position of the side of described last a slice object lens 131, in described cavity 220, fill immersion liquid; Horizontal liquid outlet 212, is symmetrical arranged with described horizontal inlet 211; Vertical extraction opening 214, passes to the bottom of described block 210; Described auxiliary liquid holdout device 300 is located between the substrate table 160 of substrate 161 and carrier substrate 161, and covers described substrate table 160, comprising: gas supplying passage 310, is communicated with the first air cavity 311; Vacuum feed passage 320, is communicated with the second air cavity 321; By the first gap 330 conducting between described first air cavity 311 and described second air cavity 321.The present invention, by controlling the gas flow of vertical extraction opening 214, can realize the control of liquid-retentive device 200 pairs of immersion liquid, prevent immersion liquid from leaking; Meanwhile, utilize the gas supplying passage 310 in auxiliary liquid holdout device 300 and vacuum feed passage 320 to form air-flow at substrate 161 lower surface, prevent substrate 161 because immersion liquid sticky adhesive is on substrate table 160.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (17)
1. a liquid control device for immersed photoetching machine, is applied in immersed photoetching machine, it is characterized in that, comprises liquid-retentive device and auxiliary liquid holdout device, wherein,
Described liquid-retentive device is located at the below of last a slice object lens, and it comprises block, and described block surrounds a cavity, and described block is provided with:
Horizontal inlet, corresponding with the position of the side of described last a slice object lens, in described cavity, fill immersion liquid;
Horizontal liquid outlet, is symmetrical arranged with described horizontal inlet;
Vertical extraction opening, passes to the bottom of described block;
Described auxiliary liquid holdout device is located between substrate and the substrate table of carrier substrate, and covers described substrate table, comprising:
Gas supplying passage, is communicated with the first air cavity;
Vacuum feed passage, is communicated with the second air cavity;
By the first gap conducting between described first air cavity and described second air cavity.
2. the liquid control device of immersed photoetching machine as claimed in claim 1, it is characterized in that, also comprise gas supply device and vacuum feed device, one end of described gas supplying passage is communicated with described first air cavity, and the other end is connected with described gas supply device; One end of described vacuum feed passage is communicated with described second air cavity, and the other end is connected with described vacuum feed device.
3. the liquid control device of immersed photoetching machine as claimed in claim 1, it is characterized in that, described block also comprises the vertical inlet of the bottom passing to described block, described vertical extraction opening and the distance at the center of described cavity are greater than the distance at the center of described vertical inlet and described cavity.
4. the liquid control device of immersed photoetching machine as claimed in claim 3, it is characterized in that, described horizontal liquid outlet is gas-liquid two-phase recovery port with vertical extraction opening.
5. the liquid control device of immersed photoetching machine as claimed in claim 1, it is characterized in that, the edge of described auxiliary liquid holdout device is provided with a boss, and described second air cavity is connected with described boss through the second gap.
6. the liquid control device of immersed photoetching machine as claimed in claim 5, it is characterized in that, the distance between the madial wall of described boss and the edge of described substrate is 200 μm ~ 300 μm.
7. the liquid control device of immersed photoetching machine as claimed in claim 5, it is characterized in that, the difference in height between the upper surface of described substrate and the upper surface of described boss is less than 10 μm.
8. the liquid control device of immersed photoetching machine as claimed in claim 5, it is characterized in that, the madial wall of described boss and the distance at adsorbent equipment center are 150.2mm ~ 150.3mm.
9. the liquid control device of immersed photoetching machine as claimed in claim 5, it is characterized in that, the height in described second gap is 20 μm ~ 30 μm, and the length in described second gap is 2mm ~ 3mm.
10. the liquid control device of immersed photoetching machine as claimed in claim 1, it is characterized in that, described gas supplying passage and vacuum feed passage are provided with multiple segmental structure.
The liquid control device of 11. immersed photoetching machines as claimed in claim 10, it is characterized in that, the length of described gas supplying passage and vacuum feed passage is divided into 12 ~ 15 sections by described multiple segmental structure.
The liquid control device of 12. immersed photoetching machines as claimed in claim 1, it is characterized in that, described auxiliary liquid holdout device is provided with height adjustment mechanism.
The liquid control device of 13. immersed photoetching machines as claimed in claim 12, is characterized in that, described height adjustment mechanism adopts air supporting motor or magnetic to float motor and drives.
The liquid control device of 14. immersed photoetching machines as claimed in claim 1, is characterized in that, be provided with gas flow guiding blade in described first air cavity.
The liquid control device of 15. immersed photoetching machines as described in claim 1 or 14, it is characterized in that, the angle of described gas supplying passage and vertical direction is 30 ° ~ 60 °.
The liquid control device of 16. immersed photoetching machines as claimed in claim 1, is characterized in that, the height in described first gap is 50 μm ~ 100 μm, and the length in described first gap is 3mm ~ 5mm.
The liquid control device of 17. immersed photoetching machines as claimed in claim 1, is characterized in that, the pressure in described first air cavity is at more than 4000Pa, and the pressure in described second air cavity is below-1000Pa.
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| JP5309565B2 (en) * | 2005-08-05 | 2013-10-09 | 株式会社ニコン | Stage apparatus, exposure apparatus, method, exposure method, and device manufacturing method |
| CN101452219B (en) * | 2008-12-29 | 2010-08-11 | 浙江大学 | Submerge liquid supplying recovery controlling device for photoetching machine |
| NL2009472A (en) * | 2011-10-24 | 2013-04-25 | Asml Netherlands Bv | A fluid handling structure, a lithographic apparatus and a device manufacturing method. |
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| CN112684668A (en) * | 2020-12-25 | 2021-04-20 | 浙江启尔机电技术有限公司 | Immersion liquid supply and recovery device |
| CN112631082A (en) * | 2020-12-25 | 2021-04-09 | 浙江启尔机电技术有限公司 | Immersion liquid feeding device |
| CN112631082B (en) * | 2020-12-25 | 2024-04-05 | 浙江启尔机电技术有限公司 | Immersion liquid supply device |
| CN112684674A (en) * | 2020-12-29 | 2021-04-20 | 浙江启尔机电技术有限公司 | Immersion liquid supply and recovery system and immersion flow field initial establishment method |
| CN112684671A (en) * | 2020-12-29 | 2021-04-20 | 浙江启尔机电技术有限公司 | Immersion liquid supply and recovery system and immersion flow field initial establishment method |
| CN112684671B (en) * | 2020-12-29 | 2024-06-11 | 浙江启尔机电技术有限公司 | Immersion liquid supply and recovery system and immersion flow field initial establishment method |
| CN112684674B (en) * | 2020-12-29 | 2024-08-06 | 浙江启尔机电技术有限公司 | Immersion liquid supply and recovery system and immersion flow field initial establishment method |
| WO2023216464A1 (en) * | 2022-05-11 | 2023-11-16 | 北京华卓精科科技股份有限公司 | Silicon wafer bearing device in photoetching apparatus |
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