CN104694086A - Formula and preparation method for novel heat-dissipation material - Google Patents
Formula and preparation method for novel heat-dissipation material Download PDFInfo
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- CN104694086A CN104694086A CN201310641176.0A CN201310641176A CN104694086A CN 104694086 A CN104694086 A CN 104694086A CN 201310641176 A CN201310641176 A CN 201310641176A CN 104694086 A CN104694086 A CN 104694086A
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- dissipation material
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K5/00—Heat-transfer, heat-exchange or heat-storage materials, e.g. refrigerants; Materials for the production of heat or cold by chemical reactions other than by combustion
- C09K5/08—Materials not undergoing a change of physical state when used
- C09K5/14—Solid materials, e.g. powdery or granular
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K7/00—Constructional details common to different types of electric apparatus
- H05K7/20—Modifications to facilitate cooling, ventilating, or heating
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- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Combustion & Propulsion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The invention discloses a formula and a preparation method for a novel heat-dissipation material. The formula for the novel heat-dissipation material is mainly prepared from 20 to 30% of BN, 10 to 20% of ALN, 10 to 20% of AL2O3, 0 to 10% of BeO, 20 to 30% of Si3O4, 10 to 20% of SiC, 0 to 5% of methacrylic acid, 0 to 5% of ethyl acrylate and 0 to 5% of silica sol. The preparation method for the novel heat-dissipation material comprises the following steps: spraying a heat-dissipation material on a substrate and allowing the processed heat-dissipation material to enter a high-temperature sinter box through a production line; and carrying out high-temperature heating for 3 to 4 h in a heat-dissipation sinter box by using an automatic control temperature system, then carrying out cryogenic cooling for 1 to 2 h and finally carrying out molding. The invention has the following advantages: the novel heat-dissipation material is convenient to prepare and has good heat-dissipation effects; and the preparation method is simple.
Description
Technical field
The present invention relates to field of radiating, particularly a kind of formula and preparation method thereof of Novel heat dissipation material.
Background technology
Heat dissipation film, is namely the film of one deck heat conduction and heat radiation be used in above the electron device such as mobile phone, panel computer, is roughly divided in the industry four kinds: the rare and carbon nanotube heat dissipation film of natural graphite, electrographite graphite.Natural graphite falls apart price very cheaply, but radiating effect is undesirable.The rare good heat dissipation effect of graphite, but too expensive, thousands of unit easily.
Heat dissipation film material is in the market all utilize graphite flake substantially, utilizes the heat conduction of graphite height, high heat dispersion, reaches the cooling requirements of electron device.But because graphite is electro-conductive material, and graphite is form of powdery particles article.As directly used graphite flake to attach at electronic product surface radiating, powdered graphite can drop to inside electronic product, causes electronic product short circuit.Summary of the invention
In order to address the deficiencies of the prior art, the invention provides formula of a kind of Novel heat dissipation material and preparation method thereof, have easy to prepare, production technique is simple, the advantage of good heat dissipation effect.
In order to solve the problems of the technologies described above, the present invention adopts following technical scheme: a kind of Novel heat dissipation material formula, is characterized in that: primarily of BN, ALN, AL2O3, BeO, Si3O4, SiC, methacrylic acid, ethyl propenoate, silicon sol, vinylformic acid is that starting material are made, and their weight percent formula is, BN 20 ~ 30%, ALN 10 ~ 20%, AL2O3 10 ~ 20%, BeO 0 ~ 10%, Si3O4 20 ~ 30%, SiC 10 ~ 20%, methacrylic acid 0 ~ 5%, ethyl propenoate 0 ~ 5%, silicon sol 0 ~ 5%, vinylformic acid 0 ~ 5%.
Described BN, ALN, AL2O3, BeO, Si3O4, SiC, methacrylic acid, ethyl propenoate, silicon sol, the preferred weight percent of vinylformic acid is: BN 21.3%, ALN 15.4%, AL2O3 19.85%, BeO 9.61%, Si3O4 21.67%, SiC 12.47%, methacrylic acid 0.1%, ethyl propenoate 0.1%, silicon melten gel 0.2%, vinylformic acid 0.1%.
A preparation method for Novel heat dissipation material formula, is characterized in that: comprise the following steps:
S1. first heat sink material is sprayed on base material, enters in high temperature sintering casing through streamline.
S2., in heat radiation sintering casing, carry out 3 ~ 4 hours heat by A.T.C system, then carry out subcooling, the time: 1 ~ 2 hour aftershaping.
Described in heat radiation sintering casing, by A.T.C system first by base material heating to 560 ~ 620 DEG C.
Described in heat radiation sintering casing, again base material is cooled to-25 ~-10 DEG C by A.T.C system.
The invention has the beneficial effects as follows: one of the present invention is coated on metal surface material, can strengthen heat conductivility and the radiance of metal, docile, on electronic product surface, is reached for electronic product cooling, thermolysis.
Embodiment
Below in conjunction with embodiment, the invention will be further described.
A kind of Novel heat dissipation material formula, primarily of BN, ALN, AL2O3, BeO, Si3O4, SiC, methacrylic acid, ethyl propenoate, silicon sol, vinylformic acid is that starting material are made, and their weight percent formula is, BN 21.3%, ALN 15.4%, AL2O3 19.85%, BeO 9.61%, Si3O4 21.67%, SiC 12.47%, methacrylic acid 0.1%, ethyl propenoate 0.1%, silicon melten gel 0.2%, vinylformic acid 0.1%.The heat sink material of this proportioning is mixed, is sprayed on base material and enters in high temperature sintering casing through streamline.In heat radiation sinter box, undertaken within 4 hours, being heated to 560 DEG C by A.T.C system, then carry out the subcooling of 1 hour to-25 DEG C.
Although invention has been described above in conjunction with the embodiments; but the present invention is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under enlightenment of the present invention; the distortion such as interpolation done without departing from the spirit or scope of the present invention, amendment, omission, replacement, all within protection scope of the present invention.
Claims (6)
1. a Novel heat dissipation material formula, is characterized in that: primarily of BN, ALN, AL2O3, BeO, Si3O4, SiC, methacrylic acid, ethyl propenoate, silicon sol, vinylformic acid is that starting material are made, and their weight percent formula is, BN 20 ~ 30%, ALN 10 ~ 20%, AL2O3 10 ~ 20%, BeO 0 ~ 10%, Si3O4 20 ~ 30%, SiC 10 ~ 20%, methacrylic acid 0 ~ 5%, ethyl propenoate 0 ~ 5%, silicon sol 0 ~ 5%, vinylformic acid 0 ~ 5%.
2. a kind of Novel heat dissipation material formula according to claim 1, is characterized in that: described BN, ALN, AL2O3, BeO, Si3O4, SiC, methacrylic acid, ethyl propenoate, silicon sol, the preferred weight percent of vinylformic acid is: BN 21.3%, ALN 15.4%, AL2O3 19.85%, BeO 9.61%, Si3O4 21.67%, SiC 12.47%, methacrylic acid 0.1%, ethyl propenoate 0.1%, silicon melten gel 0.2%, vinylformic acid 0.1%.
3. the preparation method of a kind of Novel heat dissipation material formula according to claim 1, is characterized in that: comprise the following steps:
S1. first heat sink material is sprayed on base material, enters in high temperature sintering casing through streamline.
4.S2., in heat radiation sintering casing, carries out 3 ~ 4 hours heat by A.T.C system, then carries out subcooling, the time: 1 ~ 2 hour aftershaping.
5. the preparation method of a kind of Novel heat dissipation material formula according to claim 3, is characterized in that: described in heat radiation sintering casing, by A.T.C system first by base material heating to 560 ~ 620 DEG C.
6. the preparation method of a kind of Novel heat dissipation material formula according to claim 3, is characterized in that: described in heat radiation sintering casing, again base material is cooled to-25 ~-10 DEG C by A.T.C system.
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105384444A (en) * | 2015-10-27 | 2016-03-09 | 合肥龙多电子科技有限公司 | High thermally conductive aluminum nitride-silicon carbide composite baseplate material for circuit board, containing carbon nanocapsules and preparation method of high thermally conductive aluminum nitride-silicon carbide composite baseplate material |
CN106747222A (en) * | 2016-12-05 | 2017-05-31 | 钦州市钦南区生产力促进中心 | A kind of heat sink material and preparation method thereof |
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CN1200867A (en) * | 1996-09-09 | 1998-12-02 | 株式会社东金 | Highly heat-conductive composite magnetic material |
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CN1813348A (en) * | 2003-06-17 | 2006-08-02 | 库拉米克电子学有限公司 | Device comprising at least one heat source formed by a functional element that is to be cooled, at least one heat sink, and at least one intermediate layer located between the heat source and the heat |
CN1927987A (en) * | 2005-09-06 | 2007-03-14 | 鸿富锦精密工业(深圳)有限公司 | Heat interfacial material and method for making the same |
TW200743655A (en) * | 2006-05-30 | 2007-12-01 | Univ Nat Taipei Technology | Thermal conductive silicon-ketone composition |
CN102321444A (en) * | 2011-05-30 | 2012-01-18 | 天津安品有机硅材料有限公司 | Thermal conductivity acrylic pressure sensitive glue composition and vinylformic acid heat conduction paster |
CN102372927A (en) * | 2010-08-12 | 2012-03-14 | 中国钢铁股份有限公司 | Thermally Conductive Composite Materials |
CN102651961A (en) * | 2012-05-29 | 2012-08-29 | 邱璟 | Heat-conduction heat-dissipation interface material and manufacturing method thereof |
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2013
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Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US5098609A (en) * | 1989-11-03 | 1992-03-24 | The Research Foundation Of State Univ. Of N.Y. | Stable high solids, high thermal conductivity pastes |
CN1200867A (en) * | 1996-09-09 | 1998-12-02 | 株式会社东金 | Highly heat-conductive composite magnetic material |
CN1396800A (en) * | 2001-06-07 | 2003-02-12 | 松下电器产业株式会社 | Manufacture method of circuit substrate and circuit substrate and its power switching module |
CN1813348A (en) * | 2003-06-17 | 2006-08-02 | 库拉米克电子学有限公司 | Device comprising at least one heat source formed by a functional element that is to be cooled, at least one heat sink, and at least one intermediate layer located between the heat source and the heat |
CN1927987A (en) * | 2005-09-06 | 2007-03-14 | 鸿富锦精密工业(深圳)有限公司 | Heat interfacial material and method for making the same |
TW200743655A (en) * | 2006-05-30 | 2007-12-01 | Univ Nat Taipei Technology | Thermal conductive silicon-ketone composition |
CN102372927A (en) * | 2010-08-12 | 2012-03-14 | 中国钢铁股份有限公司 | Thermally Conductive Composite Materials |
CN102321444A (en) * | 2011-05-30 | 2012-01-18 | 天津安品有机硅材料有限公司 | Thermal conductivity acrylic pressure sensitive glue composition and vinylformic acid heat conduction paster |
CN102651961A (en) * | 2012-05-29 | 2012-08-29 | 邱璟 | Heat-conduction heat-dissipation interface material and manufacturing method thereof |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105384444A (en) * | 2015-10-27 | 2016-03-09 | 合肥龙多电子科技有限公司 | High thermally conductive aluminum nitride-silicon carbide composite baseplate material for circuit board, containing carbon nanocapsules and preparation method of high thermally conductive aluminum nitride-silicon carbide composite baseplate material |
CN106747222A (en) * | 2016-12-05 | 2017-05-31 | 钦州市钦南区生产力促进中心 | A kind of heat sink material and preparation method thereof |
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Application publication date: 20150610 |