CN104681672B - A kind of manufacture method of light emitting diode - Google Patents
A kind of manufacture method of light emitting diode Download PDFInfo
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- CN104681672B CN104681672B CN201310642516.1A CN201310642516A CN104681672B CN 104681672 B CN104681672 B CN 104681672B CN 201310642516 A CN201310642516 A CN 201310642516A CN 104681672 B CN104681672 B CN 104681672B
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Abstract
The present invention provides a kind of manufacture method of light emitting diode, including step：1）Epitaxial light emission structure is formed in growth substrates surface；2）N electrode platform and multiple holes are etched simultaneously in the respectively luminescence unit, and multiple holes are between N electrode platform and P electrode；3）Tangent forms multiple cutting grooves；4）Deposit SiO2Layer, and remove the respectively SiO in the hole2Layer；5）Corroded using chemical corrosion method in the respectively hole bottom and multiple dislocation pits, and remove the residue respectively in the cutting groove simultaneously；6）SiO is formed again2Layer；7）Remove the SiO of part2Layer, retain respectively the hole bottom and side wall and the SiO below P electrode2Layer；8）Form current extending；9）Prepare P electrode and N electrode.The present invention forms dislocation pit by making multiple holes between P electrode and N electrode, and in hole bottom, it is possible to reduce the electric current congestion of light emitting diode, improves current distribution uniformity, and improves the light extraction efficiency of light emitting diode.
Description
Technical field
The invention belongs to field of semiconductor illumination, more particularly to a kind of manufacture method of light emitting diode.
Background technology
Semiconductor lighting, will with remarkable advantages such as long lifespan, energy-saving and environmental protection, safety as new and effective solid light source
Leaping again after incandescent lamp, fluorescent lamp in history is illuminated as the mankind, its application field expands rapidly, positive to drive
The upgrading of the industries such as traditional lighting, display, its economic benefit and social benefit are huge.Just because of this, semiconductor lighting quilt
Generally regard one of 21 century new industry most with prospects as, and the most important system of coming years optoelectronic areas is high
One of point.LED is by three four compoundses, such as GaAs（GaAs）、GaP（Gallium phosphide）、GaAsP（Phosphorus arsenic
Gallium）Deng made of semiconductor, its core is PN junction.Therefore it has the I-N characteristics of general P-N junction, i.e. forward conduction, reversely cuts
Only, breakdown characteristics.In addition, under certain condition, it also has the characteristics of luminescence.Under forward voltage, electronics injects P areas by N areas,
N areas are injected in hole by P areas.Into the minority carrier in other side region（Few son）A part and majority carrier（It is more sub）It is compound and
It is luminous.
The product luminous efficiency of LED illumination light source early stage is low, and light intensity typically can only achieve several to dozens of mcd, is applicable
Occasion indoors, applied in household electrical appliances, instrument and meter, communication apparatus, microcomputer and toy etc..Directly target is LED light at present
Source substitutes incandescent lamp and fluorescent lamp, this replacement trend develop since topical application field.
With the development of semiconductor illumination technique, GaN base light emitting gradually shows its unique advantage, how to carry
High GaN base LED light emission rate is one of most concerned problem of current people, because GaN base LED light extraction efficiency is limited by
Huge refringence between GaN and air, according to snell law, light is from GaN（n≈2.5）To air（n=1.0）It is critical
Angle is about 23 °, can be only emitted in incidence angle in the light within critical angle in air, and the light beyond critical angle can only be
Roundtrip inside GaN, until by self-absorption.
In addition, current more ripe light emitting diode is group III-nitride gallium nitride, it typically uses sapphire material
As substrate, due to the insulating properties of Sapphire Substrate, so common GaN base LED uses positive assembling structure.Positive assembling structure active area
The light sent is emitted via p-type GaN areas and transparency electrode.This is simple in construction, manufacture craft relative maturity.But positive assembling structure
LED have two it is obvious the shortcomings that, assembling structure LED p positive first, n-electrode must flow transversely through n-GaN in LED the same side, electric current
Layer, cause current crowding, local pyrexia amount is high, limits driving current.
A kind of therefore it provides light emitting diode that can effectively improve LED current drive efficiency and light extraction efficiency
Manufacture method be necessary.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of manufacturer of light emitting diode
Method, for solving LED current congestion in the prior art, current distribution uniformity difference and the problems such as light extraction efficiency is low.
In order to achieve the above objects and other related objects, the present invention provides a kind of manufacture method of light emitting diode, described
Manufacture method comprises at least following steps：
1）One growth substrates are provided, the hair for including N-type layer, quantum well layer and P-type layer is formed in the growth substrates surface
Light epitaxial structure；
2）Go out multiple luminescence units defined in the epitaxial light emission structure, using photoetching process in the respectively luminescence unit
N electrode platform and multiple holes are etched simultaneously, and the multiple hole is between N electrode platform and P electrode；
3）Cutting is carried out to the epitaxial light emission structure according to the respectively luminescence unit and forms multiple cutting grooves；
4）In the epitaxial light emission structure, N electrode platform and the respectively bottom of the hole and side wall deposition SiO2Layer, and use
Photoetching process removes the respectively SiO in the hole2Layer, expose the N-type layer of the respectively hole bottom；
5）Multiple dislocation pits are gone out using N-type layer surface corrosion of the chemical corrosion method in the respectively hole bottom, and removed simultaneously
The respectively residue in the cutting groove；
6）Again in the epitaxial light emission structure, N electrode platform and respectively the bottom of the hole and side wall form SiO2Layer；
7）Remove the SiO of part2Layer to expose P-type layer and N electrode platform, retain respectively the hole bottom and side wall and
SiO below P electrode2Layer；
8）Current extending is formed in P-type layer surface and respectively in the hole；
9）In the SiO retained with P-type layer surface2Current expansion layer surface prepares P electrode corresponding to layer, in N electrode platform
Surface prepares N electrode.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, the growth substrates serve as a contrast for sapphire
One kind in bottom, SiC substrate and Si substrates.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, carved using inductively coupled plasma
Erosion method etches the N electrode platform and multiple holes.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, the cross sectional shape of described hole is circle
One kind in shape, hexagon, rectangle and square.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, step 3）Using laser cutting method
Form the multiple cutting groove.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, step 4）And step 6）In, use
Plasma enhanced chemical vapor deposition method forms the SiO2Layer.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, step 5）Described chemical corrosion method
To use thermal chemical damage method, and the temperature range corroded is 180~300 DEG C.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, the dislocation pit is periodic distribution
Conical socket.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, what the P-type layer surface retained
SiO2The edge of layer exceeds the predetermined width of P electrode edge one, and the predetermined width is 2~10um.
As a kind of preferred scheme of the manufacture method of the light emitting diode of the present invention, the current extending is that ITO is saturating
Bright conductive layer.
As described above, the present invention provides a kind of manufacture method of light emitting diode, the manufacture method comprises at least following
Step：1）A growth substrates are provided, being formed in the growth substrates surface includes the luminous outer of N-type layer, quantum well layer and P-type layer
Prolong structure；2）Go out multiple luminescence units defined in the epitaxial light emission structure, using photoetching process in the respectively luminescence unit
N electrode platform and multiple holes are etched simultaneously, and the multiple hole is between N electrode platform and P electrode；3）According to each
The luminescence unit carries out cutting to the epitaxial light emission structure and forms multiple cutting grooves；4）In the epitaxial light emission structure, N electricity
The bottom of Polar Patform and the respectively hole and side wall deposition SiO2Layer, and the respectively SiO in the hole is removed using photoetching process2Layer, dew
Go out the N-type layer of the respectively hole bottom；5）Multiple dislocations are gone out using N-type layer surface corrosion of the chemical corrosion method in the respectively hole bottom
Hole, and the residue respectively in the cutting groove is removed simultaneously；6）Again in the epitaxial light emission structure, N electrode platform and respectively should
The bottom of hole and side wall form SiO2Layer；7）Remove the SiO of part2Layer retains the respectively hole to expose P-type layer and N electrode platform
Hole bottom and side wall and the SiO below P electrode2Layer；8）Current expansion is formed in P-type layer surface and respectively in the hole
Layer；9）In the SiO retained with P-type layer surface2Current expansion layer surface prepares P electrode corresponding to layer, in N electrode platform surface system
Standby N electrode.The present invention forms dislocation pit by making multiple holes between P electrode and N electrode, and in hole bottom, can be with
The electric current congestion of light emitting diode is reduced, improves current distribution uniformity, and improve the light extraction efficiency of light emitting diode.
Brief description of the drawings
Fig. 1 is shown as the manufacture method step 1 of the light emitting diode of the present invention）The structural representation presented.
Fig. 2 is shown as the manufacture method step 2 of the light emitting diode of the present invention）The structural representation presented.
Fig. 3~Fig. 4 is shown as the manufacture method step 4 of the light emitting diode of the present invention）The structural representation presented.
Fig. 5 is shown as the manufacture method step 5 of the light emitting diode of the present invention）The structural representation presented.
Fig. 6 is shown as the manufacture method step 6 of the light emitting diode of the present invention）The structural representation presented.
Fig. 7 is shown as the manufacture method step 7 of the light emitting diode of the present invention）The structural representation presented.
Fig. 8 is shown as the manufacture method step 8 of the light emitting diode of the present invention）The structural representation presented.
Fig. 9 is shown as the manufacture method step 9 of the light emitting diode of the present invention）The structural representation presented.
Component label instructions
10 growth substrates
20 epitaxial light emission structures
201 N-type layers
202 quantum well layers
203 P-type layers
204 holes
205 N electrode platforms
30 SiO2Layer
206 dislocation pits
40 current extendings
501 N electrodes
502 P electrodes
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 1~Fig. 9.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
As shown in Fig. 1~Fig. 9, the present embodiment provides a kind of manufacture method of light emitting diode, and the manufacture method is at least
Comprise the following steps：
As shown in figure 1, step 1 is carried out first）, there is provided a growth substrates 10, formed and wrapped in the surface of growth substrates 10
Include the epitaxial light emission structure 20 of N-type layer 201, quantum well layer 202 and P-type layer 203.
As an example, the growth substrates 10 are one kind in Sapphire Substrate, SiC substrate and Si substrates.In this implementation
In example, the growth substrates 10 are Sapphire Substrate, and the N-type layer 201 is N-GaN layers, and the quantum well layer 202 is InGaN/
GaN quantum well layers, the P-type layer 203 are P-GaN layers.
In the present embodiment, described N-type layer 201, quantum well layer are formed using metal-organic chemical vapor deposition equipment method
202 and P-type layer 203.
As shown in Fig. 2 then carry out step 2）, go out multiple luminescence units defined in the epitaxial light emission structure 20, adopt
With photoetching process N electrode platform 205 and multiple holes 204, and the multiple hole are etched in the respectively luminescence unit simultaneously
204 between N electrode platform 205 and P electrode 502.
As an example, the N electrode platform 205 and multiple holes are etched using sense coupling method
204。
As an example, the cross sectional shape of described hole 204 is one kind in circle, hexagon, rectangle and square.At this
In embodiment, the cross sectional shape of described hole 204 is circle.The multiple hole 204 is rectangular array or six square arrays week
Phase property is distributed between N electrode platform 205 and P electrode 502.
Then step 3 is carried out）, cutting is carried out to the epitaxial light emission structure 20 according to the respectively luminescence unit and forms multiple cut
Cut groove；
As an example, the multiple cutting groove is formed using laser cutting method（It is unillustrated）.
As shown in Fig. 3~Fig. 4, step 4 is then carried out）, in the epitaxial light emission structure 20, N electrode platform 205 and respectively should
The bottom of hole 204 and side wall deposition SiO2Layer 30, and the respectively SiO in the hole 204 is removed using photoetching process2Layer, expose each
The N-type layer 201 of the bottom of hole 204.
As an example, using plasma enhancing chemical vapour deposition technique forms the SiO2Layer 30.
As shown in figure 5, then carry out step 5）, using chemical corrosion method in the table of N-type layer 201 of the respectively bottom of hole 204
Face, which is corroded, multiple dislocation pits 206, and removes the residue respectively in the cutting groove simultaneously.
As an example, described chemical corrosion method is using thermal chemical damage method, and the temperature range corroded for 180~
300℃.Multiple dislocations can be gone out in the surface corrosion of N-type layer 201 of the respectively bottom of hole 204 using the method for thermal chemical damage
Hole 206, and can be quickly by the removing residues stayed in the cutting groove after above-mentioned laser cutting.
As an example, the dislocation pit 206 is the conical socket of periodic distribution.
As shown in fig. 6, then carry out step 6）, again in the epitaxial light emission structure 20, N electrode platform 205 and respectively should
The bottom of hole 204 and side wall form SiO2Layer.
As an example, using plasma enhancing chemical vapour deposition technique forms the SiO2Layer.
As shown in fig. 7, then carry out step 7）, remove the SiO of part2Layer is to expose P-type layer 203 and N electrode platform
205, retain the respectively bottom of hole 204 and side wall and the SiO positioned at the lower section of P electrode 5022Layer.
As an example, the SiO of part is removed using dry etching or wet etching method2Layer is electric to expose P-type layer 203 and N
Polar Patform 205, retain the respectively bottom of hole 204 and side wall and the SiO positioned at the lower section of P electrode 5022Layer, wherein, positioned at P electricity
The SiO of the lower section of pole 5022Layer need to retain the area bigger than P electrode 502, as current barrier layer.
As an example, the SiO that the surface of P-type layer 203 retains2The edge of layer is default beyond the edge one of P electrode 502
Width, the predetermined width are 2~10um.
As shown in figure 8, then carry out step 8）, current extending in the surface of P-type layer 203 and is respectively formed in the hole 204
40。
As an example, the current extending 40 is to prepare transparent conductive layer using the methods of evaporation or sputtering.
As shown in figure 9, finally carry out step 9）, in the SiO retained with the surface of P-type layer 2032Current extending corresponding to layer
40 surfaces prepare P electrode 502, and N electrode 501 is prepared in the surface of N electrode platform 205.
As described above, the present invention provides a kind of manufacture method of light emitting diode, the manufacture method comprises at least following
Step：1）A growth substrates 10 are provided, being formed in the surface of growth substrates 10 includes N-type layer 201, quantum well layer 202 and p-type
The epitaxial light emission structure 20 of layer 203；2）Go out multiple luminescence units defined in the epitaxial light emission structure 20, using photoetching process
Etch N electrode platform 205 and multiple holes 204 simultaneously in the respectively luminescence unit, and the multiple hole 204 is located at N electricity
Between Polar Patform 205 and P electrode 502；3）It is more that cutting formation is carried out to the epitaxial light emission structure 20 according to the respectively luminescence unit
Individual cutting groove；4）In the epitaxial light emission structure 20, N electrode platform 205 and the respectively bottom of the hole 204 and side wall deposition
SiO2Layer, and the respectively SiO in the hole 204 is removed using photoetching process2Layer, expose the N-type layer 201 of the respectively bottom of hole 204；
5）Multiple dislocation pits 206 are gone out using N-type layer 201 surface corrosion of the chemical corrosion method in the respectively bottom of hole 204, and removed simultaneously
The respectively residue in the cutting groove；6）Again in the epitaxial light emission structure 20, N electrode platform 205 and each hole 204
Bottom and side wall form SiO2Layer；7）Remove the SiO of part2Layer retains the respectively hole to expose P-type layer 203 and N electrode platform 205
The bottom of hole 204 and side wall and the SiO positioned at the lower section of P electrode 5022Layer；8）In the surface of P-type layer 203 and respectively in the hole 204
Form current extending 40；9）In the SiO retained with the surface of P-type layer 2032The surface of current extending 40 corresponding to layer prepares P electricity
Pole 502, N electrode 501 is prepared in the surface of N electrode platform 205.The present invention is more by being made between P electrode 502 and N electrode 501
Individual hole 204, and form dislocation pit 206 in the bottom of hole 204, it is possible to reduce the electric current congestion of light emitting diode, improve electric current
Distributing homogeneity, and improve the light extraction efficiency of light emitting diode.So the present invention effectively overcome it is of the prior art it is a variety of lack
Put and have high industrial utilization.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (10)
1. a kind of manufacture method of light emitting diode, it is characterised in that the manufacture method comprises at least following steps：
1）A growth substrates are provided, being formed in the growth substrates surface includes the luminous outer of N-type layer, quantum well layer and P-type layer
Prolong structure；
2）Go out multiple luminescence units defined in the epitaxial light emission structure, using photoetching process in the respectively luminescence unit simultaneously
N electrode platform and multiple holes are etched, and the multiple hole is between N electrode platform and P electrode；
3）Cutting is carried out to the epitaxial light emission structure according to the respectively luminescence unit and forms multiple cutting grooves；
4）In the epitaxial light emission structure, N electrode platform and the respectively bottom of the hole and side wall deposition SiO2Layer, and use photoetching
Technique removes the respectively SiO in the hole2Layer, expose the N-type layer of the respectively hole bottom；
5）Multiple dislocation pits are gone out using N-type layer surface corrosion of the chemical corrosion method in the respectively hole bottom, and removes and respectively should simultaneously
Cut the residue in groove；
6）Again in the epitaxial light emission structure, N electrode platform and respectively the bottom of the hole and side wall form SiO2Layer；
7）Remove the SiO of part2Layer retains respectively the hole bottom and side wall and positioned at P to expose P-type layer and N electrode platform
The SiO of base part2Layer；
8）Current extending is formed in P-type layer surface and respectively in the hole；
9）In the SiO retained with P-type layer surface2Current expansion layer surface prepares P electrode corresponding to layer, in N electrode platform surface system
Standby N electrode.
2. the manufacture method of light emitting diode according to claim 1, it is characterised in that：The growth substrates are sapphire
One kind in substrate, SiC substrate and Si substrates.
3. the manufacture method of light emitting diode according to claim 1, it is characterised in that：Using inductively coupled plasma
Etching method etches the N electrode platform and multiple holes.
4. the manufacture method of light emitting diode according to claim 1, it is characterised in that：The cross sectional shape of described hole is
One kind in circle, hexagon, rectangle and square.
5. the manufacture method of light emitting diode according to claim 1, it is characterised in that：Step 3）Using laser cutting side
Method forms the multiple cutting groove.
6. the manufacture method of light emitting diode according to claim 1, it is characterised in that：Step 4）And step 6）In, adopt
The SiO is formed with plasma enhanced chemical vapor deposition method2Layer.
7. the manufacture method of light emitting diode according to claim 1, it is characterised in that：Step 5）Described chemical attack
Method is using thermal chemical damage method, and the temperature range corroded is 180~300 DEG C.
8. the manufacture method of light emitting diode according to claim 1, it is characterised in that：The dislocation pit is periodicity point
The conical socket of cloth.
9. the manufacture method of light emitting diode according to claim 1, it is characterised in that：What the P-type layer surface retained
SiO2The edge of layer exceeds the predetermined width of P electrode edge one, and the predetermined width is 2~10um.
10. the manufacture method of light emitting diode according to claim 1, it is characterised in that：The current extending is ITO
Transparency conducting layer.
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| CN105789421B (en) * | 2016-04-28 | 2018-01-26 | 厦门乾照光电股份有限公司 | A method for manufacturing micron-wire light-emitting diodes with inverted trapezoidal frustum |
| CN106865741B (en) * | 2017-02-27 | 2023-03-28 | 浙江大学 | Reverse seepage bioelectrode system and pollutant removal method thereof |
| TWI789764B (en) | 2021-05-21 | 2023-01-11 | 友達光電股份有限公司 | Light-emitting device and manufacturing method thereof and manufacturing method of light-emitting apparatus |
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| KR101761385B1 (en) * | 2010-07-12 | 2017-08-04 | 엘지이노텍 주식회사 | Light emitting device |
| TWI491070B (en) * | 2011-01-19 | 2015-07-01 | Formosa Epitaxy Inc | Light emitting diode device with uniform current distribution |
| TWI529963B (en) * | 2011-07-25 | 2016-04-11 | 廣鎵光電股份有限公司 | Light-emitting element structure |
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|---|---|---|---|---|
| CN101488547A (en) * | 2008-12-30 | 2009-07-22 | 上海蓝光科技有限公司 | LED chip construction and manufacturing method thereof |
| CN102420279A (en) * | 2011-11-03 | 2012-04-18 | 厦门市三安光电科技有限公司 | Gallium nitride based light emitting diode and manufacturing method thereof |
| CN102810609A (en) * | 2012-08-16 | 2012-12-05 | 厦门市三安光电科技有限公司 | A kind of ultraviolet semiconductor light-emitting device and its manufacturing method |
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