CN104678694B - Domain modification method and equipment - Google Patents
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- CN104678694B CN104678694B CN201310612554.2A CN201310612554A CN104678694B CN 104678694 B CN104678694 B CN 104678694B CN 201310612554 A CN201310612554 A CN 201310612554A CN 104678694 B CN104678694 B CN 104678694B
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- 238000002715 modification method Methods 0.000 title claims abstract description 19
- 230000001154 acute effect Effects 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 15
- 238000012937 correction Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000001514 detection method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
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- 239000004065 semiconductor Substances 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
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- 238000004458 analytical method Methods 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
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- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
A kind of domain modification method of the present invention and equipment.The domain modification method includes：Original layout is obtained, the original layout includes at least one figure；The part in step in the profile of the figure is obtained, including the first line segment, second line segment and the third line segment intersected with first line segment, second line segment being mutually parallel；It obtains third line segment size and is less than the step of threshold value as pending step；The pending step is pre-processed, including：A part for pending step is replaced with by a plurality of line segment and at the broken line of obtuse angle intersection connection, the intersection point of a plurality of line segment of the broken line and is formed by acute angle successively with first line segment with the 4th straight line made of the fitting of the intersection point of the first, second line segment and reduces with the reduction of the third line segment size；And optical proximity correction is carried out to pretreated domain.Using pretreated layout patterns are passed through, be conducive to carry out optical proximity correction process.
Description
Technical field
The present invention relates to semiconductor fabrication process, more particularly to a kind of domain modification method and domain corrective.
Background technology
In semiconductor fabrication process, it is often necessary to make mask.The Forming Quality of mask is directly affected to be made on wafer
Figure quality.With the continuous diminution of semiconductor technology node, device feature size is constantly close to even less than light source
Wavelength.In the case, optical proximity effect becomes the factor having to take into account that.
In existing reticle pattern manufacturing process, first set according to the component graphics and optical principle that need to be made on wafer
Count out original layout.Fig. 1 and Fig. 2 respectively illustrates the example for the component graphics that need to be made on wafer（Using dotted line as outline border）And
The original layout designed according to the component graphics.Then, the original layout designed is transferred on mask plate.However,
Often there are gaps with original layout for the figure for being transferred on mask plate, for example, the right angle in original layout is being transferred to mask
Fillet can be formed after on plate（rounding）.It also can be with using this component graphics made there are the practical mask pattern of deviation
It is expected that not being inconsistent.
Accordingly, it is desirable to provide a kind of more accurate domain modification method and equipment.
Invention content
Problems solved by the invention is to provide a kind of more accurate domain modification method and equipment.
To solve the above problems, the present invention provides a kind of domain modification method, including：
Original layout is obtained, the original layout includes at least one figure；
The part in step in the profile of the figure is obtained, the step includes the first line segment being mutually parallel, second
Line segment and the third line segment intersected with first line segment, second line segment；
It obtains third line segment size and is less than the step of threshold value as pending step；
The pending step is pre-processed, the pretreatment includes：A part for the pending step is replaced
It is changed to by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the broken line intersects with a part for first line segment
The second intersection point, a plurality of line segment of the broken line are met in the first intersection point, the broken line and a part for the second line segment
Intersection point, the 4th straight line and first line segment are formed by acute angle made of first intersection point and second intersection point fitting
Angle reduces with the reduction of the third line segment size；And
Optical proximity correction is carried out to pretreated domain.
Optionally, a plurality of line segment includes that the N items first group line segment parallel with first line segment and N+1 items are mutual
Second group of line segment that be parallel and intersecting connection at obtuse angle successively with first group of line segment, wherein N are more than or equal to 1.
Optionally, it is distributed in the described 4th in the intersection point of a plurality of line segment, first intersection point and second intersection point
The point on straight line one side is equal with the point quantity of the 4th straight line another side is distributed in, and the phase at a distance from the 4th straight line
Deng.
Optionally, the intersection point of the 4th straight line and a plurality of line segment divide equally the 4th straight line described first, the
Part between two line segments.
Optionally, the 4th straight line is formed by the tangent value of acute angle and the third line with first line segment
The size of section is directly proportional.
Optionally, the quantitative range of a plurality of line segment is 3 to 15.
Optionally, the threshold value is to be patterned to be formed by fillet half using the rectangular figures in the original layout
Twice of diameter.
Correspondingly, the present invention provides a kind of domain corrective, including：
Detection unit, the figure for detecting original layout, and obtain the part in the profile of the figure in step, institute
It includes the first line segment being mutually parallel, second line segment and the third intersected with first line segment, second line segment to state step
Line segment；
Whether the third line segment size of judging unit, the step for judging to obtain is less than threshold value；
Pretreatment unit, the step for being less than threshold value to third line segment size pre-process, and the pretreatment includes：
A part for the pending step is replaced with by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the broken line
The first intersection point, the broken line and a part for the second line segment, which are intersected at, with a part for first line segment meets at second
Intersection point, the 4th straight line made of the intersection point of a plurality of line segment of the broken line, first intersection point and second intersection point fitting
Acute angle is formed by with first line segment with the reduction of the third line segment size to reduce；And
Amending unit, for carrying out optical proximity correction to pretreated domain.
Optionally, a plurality of line segment includes that the N items first group line segment parallel with first line segment and N+1 items are mutual
Second group of line segment that be parallel and intersecting connection at obtuse angle successively with first group of line segment, wherein N are more than or equal to 1.
Optionally, it is distributed in the described 4th in the intersection point of a plurality of line segment, first intersection point and second intersection point
The point on straight line one side is equal with the point quantity of the 4th straight line another side is distributed in, and the phase at a distance from the 4th straight line
Deng.
Optionally, the intersection point of the 4th straight line and a plurality of line segment divide equally the 4th straight line described first, the
Part between two line segments.
Optionally, the 4th straight line is formed by the tangent value of acute angle and the third line with first line segment
The size of section is directly proportional.
Optionally, the quantitative range of a plurality of line segment is 3 to 15.
Optionally, the threshold value is to be patterned to be formed by fillet half using the rectangular figures in the original layout
Twice of diameter.
Compared with prior art, the present invention has the following advantages：
Pretreated layout patterns are carried out according to the embodiment of the present invention, and transfer them to the figure that is formed on mask plate more
Adjunction is close.That is, using the pretreated layout patterns of process of the embodiment of the present invention, it can more accurately predict and be transferred into
Figure after on mask plate is conducive to control the amendment of domain to preferably control optical proximity correction process.
Description of the drawings
Fig. 1 shows the example for the component graphics that need to be made on wafer.
Fig. 2 shows the original layout figures that component graphics according to figure 1 are designed.
Fig. 3 shows the flow diagram of the domain modification method of the embodiment of the present invention.
Fig. 4 shows the example of an original layout part of the embodiment of the present invention.
Fig. 5 shows the enlarged diagram of step 205a and 205b in Fig. 4.
Fig. 6 shows step 205b and its corresponding ramp pattern.
Fig. 7 shows the example by pretreated step of the embodiment of the present invention.
Fig. 8 shows the example by pretreated step of further embodiment of this invention.
Fig. 9 shows the block diagram of the domain corrective of the embodiment of the present invention.
Specific implementation mode
A kind of domain modification method of offer of the embodiment of the present invention and equipment.Pretreated version is carried out according to the embodiment of the present invention
Figure figure is more nearly with the figure formed on mask plate is transferred them to.That is, using the embodiment of the present invention by pre-processing
Layout patterns, the figure after being transferred on mask plate can be more accurately predicted, to which preferably control optics is adjacent
Nearly makeover process is conducive to control the amendment of domain.
Fig. 3 shows the flow diagram of the domain modification method of the embodiment of the present invention.The domain modification method includes：
Step S101 obtains original layout, and the original layout includes at least one figure；
Step S103 obtains the part in step in the profile of the figure, and the step includes first to be mutually parallel
Line segment, second line segment and the third line segment intersected with first line segment, second line segment；
Step S105 obtains third line segment size and is less than the step of threshold value as pending step；
Step S107 pre-processes the pending step, and the pretreatment includes：By the pending step
A part is replaced with by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the broken line and the one of first line segment
Part intersects at the first intersection point, the broken line and a part for the second line segment and meets at the second intersection point, the broken line
4th straight line and the first line segment institute shape made of the intersection point of a plurality of line segment, first intersection point and second intersection point fitting
At acute angle reduce with the reduction of the third line segment size；And
Step S109 carries out optical proximity correction to pretreated domain.
Technical scheme of the present invention is described in detail below in conjunction with specific embodiments.
With reference to figure 3, step S101 is executed, original version Figure 20, described original version Figure 20 is obtained and includes at least a figure
201。
Fig. 4 shows the example of an original layout part of the embodiment of the present invention.Described original version Figure 20（In scheming
Dotted line is frame）For the domain gone out according to the graphics devices structure design that need to be formed on wafer.Described original version Figure 20 is at least
Including a figure 201, the figure 201 has profile, and step shape is presented in the graph outline shown in Fig. 4.With the void of diagram
Line frame bottom to the right on the basis of direction, the contour line of the figure 201 includes the horizontal line section with reference direction at 0 ° of angle,
And the vertical segment with reference direction angle in 90 °.
With continued reference to Fig. 4, step S103 is executed, obtains the part in step, the step in the profile of the figure 201
Including the first line segment, second line segment and the third line segment intersected with first line segment, second line segment being mutually parallel.
By being detected to the graph outline in the domain 20, the pending part in figure can be obtained, i.e., directly
Angle part and part in step.By taking original version Figure 20 shown in Fig. 4 as an example, right angle portions to be treated can be obtained
203a、203b（It is shown with circular dashed line frame in figure）With step part 205a, 205b（It is shown with circular dashed line frame in figure）.Due to
Similarly to the prior art to the processing of right angle portions, details are not described herein.Processing described below to step.
Fig. 5 shows the enlarged diagram of step 205a and 205b in Fig. 4.One step has three line segments to constitute, point
The first line segment and second line segment that Wei be mutually parallel, and the third line that intersects with first line segment and second line segment
Section.First line segment and second line segment are located at the both sides of the third line segment.Due to the wheel of usual original layout figure
Exterior feature is only included with said reference direction into 0 ° and 90 ° of line segment, therefore first line segment and second line segment are respectively with described
Three line segments are vertical.Therefore, a step includes two right angles, the height of size, that is, step of the third line segment.
Step S105 is executed, third line segment size is obtained and is less than the step of threshold value as pending step.
For the step of different height, the mode of processing is different.In some embodiments, pass through original version known to experimental data
The radius R that rectangular figures in figure are transferred to fillet figure corresponding on mask plate is substantially how many, can be by the fillet
Twice of radius R is used as threshold value.When the height of step is more than the threshold value, for example, step 205a, the step include two
Right angle can be handled respectively as independent rectangular figures, for example, it is about R respectively to cut the length since the right-angled apices
Line segment formed opening, then close the opening with a line segment.When the height of step is less than the threshold value, for example, step
205b is handled as follows the step as pending step.
Step S107 is executed, the pending step 205b is pre-processed, the pretreatment includes：It waits locating by described
A part of reason step 205b is replaced with by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the broken line with it is described
A part for first line segment intersects at the first intersection point, the broken line and a part for the second line segment and meets at the second intersection point,
The intersection point for a plurality of line segment that the broken line includes, first intersection point and second intersection point fitting made of the 4th straight line with
First line segment is formed by acute angle and reduces with the reduction of the third line segment size.
By actual mask fabrication, the step cutting pattern in original layout can be converted to ramp pattern, moreover, with described
The reduction of step height, corresponding ramp pattern can also become more flat.Fig. 6 shows the step 205b and its correspondence
Ramp pattern.Dotted line in Fig. 6 shows the rough slope that the step 205b is transferred to the slope formed after mask plate
Facial contour line, the slope surface contour line substantially meet at respective midpoint with the third line segment.Inventor's discovery, the slope surface wheel
The acute angle that profile is formed with first, second line segment reduces with the reduction of the step height.By a large amount of real
It tests, it is found that the tangent value of the acute angle is substantially inversely proportional with the step height.It is found that if being passed through to the step 205b
After crossing pretreatment, figure can be conducive to subsequent optical proximity correction, Jin Erti close to slope as shown in FIG. 6
The high modified precision of domain.
Several pretreated examples are given below.
Fig. 7 shows the example by pretreated step of the embodiment of the present invention.As shown in fig. 7, the step in Fig. 6
205b forms step 205c after pretreatment.A part of the step 205b is replaced by by a plurality of line segment successively at obtuse angle
Intersect the broken line of connection.Specifically, a part of CD, the third line segment DJ and second of the first line segments of step 205b AD
A part of JK of line segment JM（Shown in Fig. 7 chain lines）It is replaced by broken line CFHK.The broken line include one with it is described
The parallel line segment FH of first, second line segment, and the both ends line segment FH and line segment FH are connected to respectively at the line segment CF at 135 ° of angles
And HK.The remainder AC of the broken line CFHK and first line segment meet at the first intersection point C, surplus with the second line segment
Remaining part divides KM to meet at the second intersection point K.The figure that line segment AB, phantom line segments BL and line segment LM in Fig. 7 are constituted is illustrated in general institute
Step 205b corresponding ramp patterns after practical mask fabrication is transferred on mask plate are stated, wherein phantom line segments BL represents practical
Corresponding to the slope surface contour line of the ramp pattern of the step 205b after mask fabrication, met at respectively with the third line segment DJ being replaced
From midpoint G.By the way that a part of the step 205b to be substituted for multiple obtuse angle step cutting patterns as shown in Figure 7 so that pre-
Step 205c after processed is closer to the corresponding ramp patterns of the step 205b.The multiple obtuse angle step cutting pattern
Turning point, i.e., intersection point F, H and the first intersection point C of a plurality of line segment that the described broken line CFHK includes and described second are handed over
The acute angle that the fitting a straight line of point K and first, second line segment are formed with the size of the third line segment DJ reduction
And reduce so that obtuse angle step cutting pattern extend generally trend meet practical mask fabrication at figure changing rule.
In some embodiments, the fitting a straight line of turning point F, H, C and K of the multiple obtuse angle step and the slope surface wheel
Profile BL is overlapped, that is, so that the turning point of multiple obtuse angle steps is distributed generally along the slope surface contour line BL in Fig. 7, to
Reach preferably simulation effect.In some embodiments, it is distributed in the fitting a straight line（Where the i.e. described slope surface contour line BL
Straight line）The quantity of obtuse angle step turning point F, H, C and the K on both sides are equal, and the also phase of the distance apart from the slope surface contour line BL
Deng, so that distance of each point apart from the slope surface contour line BL is all unlikely to excessive, it is further to improve simulation effect.
By geometrical principle it is found that the broken line under above-mentioned configuration and the slope surface contour line BL（The i.e. described fitting a straight line position
Part between first, second line segment）Intersection point divide the slope surface contour line BL, i.e. intersection point E, G and H quarterlines equally
Virtual segment BL, thus, it is possible to determine the forming method of broken line.
In some embodiments, it is first determined constitute the number of the line segment of broken line.For example, to form two obtuse angle steps
Figure then needs to be formed a parallel segment parallel with first, second line segment and two with the parallel segment at blunt
The inclined line segment of angle intersection connection.Then, it is determined that the length of the parallel segment.By geometrical analysis, formula can be obtained（1）And formula
（2）：
Tan (x)=C/H formulas（1）
D=H/2* [cot (x) -1] formula（2）
Wherein, x represents the phantom line segments BL and acute angle formed by first, second line segment, and C is that an experiment obtains
The constant obtained, H are the size of the third line segment, i.e. step height, and d is the length of the parallel segment.
If 1/2C is constant A, by formula（1）And formula（2）Formula can be obtained（3）：
d=A*H2-H/2 （3）.
The parallel segment is vertically intersected on respective midpoint with the third line segment.Determine the length of the parallel segment
Degree, you can form the parallel segment.Then, from the two-end-point of the parallel segment, inclined line segment described in each self-forming,
The inclined line segment and the parallel segment are in respectively 135 ° of angles, respectively with first, second line segment intersection in the first intersection point and
Second intersection point.Then, the third line segment and first, second line segment are removed from first, second intersection point to institute
State the part of third line segment.The pretreatment to the step cutting pattern is completed as a result,.
Fig. 8 shows the example by pretreated step of further embodiment of this invention.As shown in figure 8, the platform in Fig. 6
Rank 205b forms step 205d after pretreatment.A part of bc of the first line segment ac of original step 205b, third line segment ck,
And a part of kl of second line segment km（Fig. 8 chain lines are shown）It is replaced.The step 205d formed after replacement includes three
Obtuse angle step is made of the remainder lm of the remainder ab of the first line segment, broken line bdfhjl and third line segment.It is described
Broken line bdfhjl and the remainder ab of first line segment meet at the first intersection point b, the remainder with the second line segment
Lm meets at the second intersection point l.The broken line bdfhjl includes two parallel segment df and hj and three and the parallel segment
At inclined line segment bd, fh and the jl at 135 ° of obtuse angles.The matched curve of turning point b, d, f, h, j and l of three obtuse angle steps with tiltedly
Facial contour line bl（Dotted line is shown in Fig. 8）It overlaps.In some embodiments, it is distributed in the fitting a straight line（The i.e. described beveled profile
Straight line where line bl）Turning point d, the h on one side and turning point f, j quantity of another side are equal, and apart from the fitting a straight line
Distance it is equal, to realize better fitting effect.Due to being provided with more obtuse angle steps so that pass through pretreated
Rank figure 205d is closer to ramp pattern made of reality, realizes better effect.
By geometrical principle it is found that in above-mentioned configuration, the broken line bdfhjl and bevel wheel profile bl（It is i.e. described quasi-
Close part of the straight line between first, second line segment）Intersection point e, g and i divide the phantom line segments bl equally, it can thus be concluded that institute
State the specific forming method of broken line bdfhjl.Specifically refer to above-described embodiment.
By above-described embodiment it is found that the obtuse angle step that has of the step cutting pattern after pretreated is more, obtuse angle step turns
Break fitting a straight line both sides be distributed more uniform, turning point apart from fitting a straight line distance it is closer, then the effect simulated is better, into
And make the modified precision of domain higher.However, the quantity of obtuse angle step cannot be excessive, calculation amount is otherwise will increase, influences to imitate
Rate, and make it is pretreated after figure middle conductor it is undersized, be unfavorable for the simulation in later stage.Therefore, the number of obtuse angle step
Amount is more suitable between 2 to 8.Due to forming N number of step（N is more than or equal to 2）N-1 parallel segment and N items is needed to tilt
Line segment, correspondingly, the quantitative range for a plurality of line segment that the broken line includes are more suitable between 3 to 15.
Step S109 is executed, optical proximity correction is carried out to pretreated domain.
Since the practical mask pattern corresponding by pretreated layout patterns is more nearly, use
The layout patterns carry out optical proximity correction（Optical Proximity Correction, OPC）, can preferably predict reality
Mask pattern made of border, thus the preferably formation of analog device structure.By the iterative process of OPC, domain is ultimately formed
Figure is carried out the making of device architecture by practical mask fabrication and using the mask, can obtain more preferably component graphics.
S109 is well known to those skilled in the art, and details are not described herein.
Correspondingly, the present invention also provides a kind of domain correctives.Fig. 9 shows that the domain amendment of the embodiment of the present invention is set
Standby 300 block diagram.The domain corrective 300 includes：
Detection unit 301, the figure for detecting original layout, and obtain the portion in the profile of the figure in step
Point, the step includes the first line segment being mutually parallel, second line segment and intersects with first line segment, second line segment
Third line segment；
Whether the third line segment size of judging unit 303, the step for judging to obtain is less than threshold value；
Pretreatment unit 305, the step for being less than threshold value to third line segment size pre-process, the pretreatment packet
It includes：A part for the pending step is replaced with by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the folding
A part for line segment and first line segment intersects at the first intersection point, the broken line and a part for the second line segment and meets at
Second intersection point, the 4th made of the intersection point of a plurality of line segment of the broken line, first intersection point and second intersection point fitting
Straight line is formed by acute angle with first line segment and reduces with the reduction of the third line segment size；And
Amending unit 307, for carrying out optical proximity correction to pretreated domain.
Above-described embodiment can be referred to the concrete configuration of 300 each unit of domain corrective, details are not described herein.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any field technology
Personnel without departing from the spirit and scope of the present invention, can make possible variation and modification, therefore the protection of the present invention
Range should be subject to the range that the claims in the present invention are defined.
Claims (14)
1. a kind of domain modification method, which is characterized in that including：
Original layout is obtained, the original layout includes at least one figure；
The part in step in the profile of the figure is obtained, the step includes the first line segment being mutually parallel, second line segment
And the third line segment intersected with first line segment, second line segment；
It obtains third line segment size and is less than the step of threshold value as pending step；
The pending step is pre-processed, the pretreatment includes：A part for the pending step is replaced with
By a plurality of line segment successively at the broken line of obtuse angle intersection connection, the part of the broken line and first line segment intersects at the
One intersection point, the broken line and a part for the second line segment meet at the second intersection point, the friendship of a plurality of line segment of the broken line
The 4th straight line is formed by acute angle with first line segment made of point, first intersection point and second intersection point fitting
Reduce with the reduction of the third line segment size；And
Optical proximity correction is carried out to pretreated domain.
2. domain modification method as described in claim 1, which is characterized in that a plurality of line segment includes N items and described first
First group of parallel line segment of line segment and N+1 articles are mutually parallel and intersect the of connection at obtuse angle successively with first group of line segment
Two groups of line segments, wherein N are more than or equal to 1.
3. domain modification method as described in claim 1, which is characterized in that the intersection point of a plurality of line segment, described first are handed over
The point for being distributed in described 4th straight line one side and the points for being distributed in the 4th straight line another side in point and second intersection point
It measures equal and equal at a distance from the 4th straight line.
4. domain modification method as described in claim 1, which is characterized in that the friendship of the 4th straight line and a plurality of line segment
Point divides part of the 4th straight line between first, second line segment equally.
5. domain modification method as described in claim 1, which is characterized in that the 4th straight line and the first line segment institute shape
At acute angle tangent value it is directly proportional to the size of third line segment.
6. domain modification method as described in claim 1, which is characterized in that the quantitative range of a plurality of line segment is 3 to 15.
7. domain modification method as described in claim 1, which is characterized in that the threshold value is using in the original layout
Rectangular figures are patterned to be formed by twice of radius of corner.
8. a kind of domain corrective, including：
Detection unit, the figure for detecting original layout, and the part in the profile of the figure in step is obtained, described
Rank includes the first line segment being mutually parallel, second line segment and the third line segment intersected with first line segment, second line segment；
Whether the third line segment size of judging unit, the step for judging to obtain is less than threshold value；
Pretreatment unit, the step for being less than threshold value to third line segment size pre-process, and the pretreatment includes：It will wait for
The part for handling the step is replaced with by a plurality of line segment successively at the broken line of obtuse angle intersection connection, the broken line and institute
The part for stating the first line segment intersects at the first intersection point, a part for the broken line and the second line segment meets at the second friendship
Point, the intersection point of a plurality of line segment of the broken line, first intersection point and second intersection point fitting made of the 4th straight line with
First line segment is formed by acute angle and reduces with the reduction of the third line segment size；And
Amending unit, for carrying out optical proximity correction to pretreated domain.
9. domain corrective as claimed in claim 8, which is characterized in that a plurality of line segment includes N items and described first
First group of parallel line segment of line segment and N+1 articles are mutually parallel and intersect the of connection at obtuse angle successively with first group of line segment
Two groups of line segments, wherein N are more than or equal to 1.
10. domain corrective as claimed in claim 8, which is characterized in that the intersection point of a plurality of line segment, described first are handed over
The point for being distributed in described 4th straight line one side and the points for being distributed in the 4th straight line another side in point and second intersection point
It measures equal and equal at a distance from the 4th straight line.
11. domain corrective as claimed in claim 8, which is characterized in that the 4th straight line and a plurality of line segment
Intersection point divides part of the 4th straight line between first, second line segment equally.
12. domain corrective as claimed in claim 8, which is characterized in that the 4th straight line and the first line segment institute
The tangent value of the acute angle of formation is directly proportional to the size of third line segment.
13. domain corrective as claimed in claim 8, which is characterized in that the quantitative range of a plurality of line segment be 3 to
15。
14. domain corrective as claimed in claim 8, which is characterized in that the threshold value is using in the original layout
Rectangular figures be patterned and be formed by twice of radius of corner.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310612554.2A CN104678694B (en) | 2013-11-26 | 2013-11-26 | Domain modification method and equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310612554.2A CN104678694B (en) | 2013-11-26 | 2013-11-26 | Domain modification method and equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104678694A CN104678694A (en) | 2015-06-03 |
| CN104678694B true CN104678694B (en) | 2018-10-16 |
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| CN106304667B (en) * | 2016-09-20 | 2018-11-13 | 凌云光技术集团有限责任公司 | A kind of profile engraving method and device |
| CN111399334B (en) * | 2019-01-03 | 2021-12-21 | 无锡华润上华科技有限公司 | Mask manufacturing method and mask |
| CN114063380B (en) * | 2020-08-07 | 2025-02-18 | 中芯国际集成电路制造(上海)有限公司 | Pattern correction method and semiconductor structure forming method |
| CN113064322B (en) * | 2021-03-26 | 2023-06-02 | 福建省晋华集成电路有限公司 | Mask pattern correction method, storage medium and apparatus |
| CN113759670B (en) * | 2021-08-20 | 2024-01-19 | 上海华虹宏力半导体制造有限公司 | Correction method of non-smooth OPC graph |
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| JP2007156027A (en) * | 2005-12-02 | 2007-06-21 | Sharp Corp | Method for correcting mask data for lsi and semiconductor manufacturing device |
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| JP3708873B2 (en) * | 2001-12-27 | 2005-10-19 | 株式会社東芝 | Pattern correction method and semiconductor device manufacturing method |
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| JP2007156027A (en) * | 2005-12-02 | 2007-06-21 | Sharp Corp | Method for correcting mask data for lsi and semiconductor manufacturing device |
| JP2008203398A (en) * | 2007-02-19 | 2008-09-04 | Toppan Printing Co Ltd | Pattern correction method for photomask and photomask |
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