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CN104678423B - The measuring method of dose equivalent under the conditions of binary channels number system and high dose - Google Patents

The measuring method of dose equivalent under the conditions of binary channels number system and high dose Download PDF

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CN104678423B
CN104678423B CN201510104261.2A CN201510104261A CN104678423B CN 104678423 B CN104678423 B CN 104678423B CN 201510104261 A CN201510104261 A CN 201510104261A CN 104678423 B CN104678423 B CN 104678423B
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radiation field
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dose
equation
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CN104678423A (en
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黄平
刘操
龚岚
杨乾
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Institute Of Radiation Research China Academy Of Testing Technology
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SICHUAN ZHONGCE TECHNOLOGY DEVELOPMENT CO LTD
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Abstract

本发明涉及电离辐射测试技术领域,提供一种双通道计数系统、高剂量条件下剂量当量的测量方法,以解决高剂量条件下的剂量当量测量问题。该测量方法主要包括:初始化双通道计数系统;分别在中能辐射场和高能辐射场进行测量;对各个条件下的测量值进行线性拟合得到插值方程。本发明提出的技术方案在一定的辐射场平均有效能量范围内,实现了半导体探测器计数线性和能量响应的同时修正。

The invention relates to the technical field of ionizing radiation testing, and provides a dual-channel counting system and a method for measuring dose equivalent under high dose conditions to solve the problem of measuring dose equivalent under high dose conditions. The measurement method mainly includes: initializing a dual-channel counting system; performing measurements in a medium-energy radiation field and a high-energy radiation field respectively; performing linear fitting on the measured values under each condition to obtain an interpolation equation. The technical scheme proposed by the invention realizes simultaneous correction of the counting linearity and energy response of the semiconductor detector within a certain range of average effective energy of the radiation field.

Description

双通道计数系统及高剂量条件下剂量当量的测量方法Double-channel counting system and measurement method of dose equivalent under high-dose conditions

技术领域technical field

本发明涉及电离辐射测试技术领域,特别涉及一种双通道计数系统及高剂量条件下剂量当量的测量方法。The invention relates to the technical field of ionizing radiation testing, in particular to a dual-channel counting system and a method for measuring dose equivalent under high dose conditions.

背景技术Background technique

半导体个人剂量计由于具有低功耗、小体积、高灵敏度、实时测量等特征,被广泛应用于核电站、放射医学、无损探测、反应堆等辐射场所。随着能源需求的日益增加,核电的发展将进一步加剧了个人剂量计的需求。但是,受仪器功耗、体积、探测器前端技术等制约,采用低功耗、分列元器件组成的探测器电子系统,其输出核脉冲信号具有一定宽度,当在高剂量辐射场时,会出现脉冲堆积现象,导致计数线性变差。Due to the characteristics of low power consumption, small size, high sensitivity, and real-time measurement, semiconductor personal dosimeters are widely used in radiation sites such as nuclear power plants, radiology, non-destructive detection, and reactors. The development of nuclear power will further intensify the demand for personal dosimeters along with the increasing demand for energy. However, due to the constraints of instrument power consumption, volume, and detector front-end technology, the detector electronic system composed of low-power consumption and arrayed components has a certain width of the output nuclear pulse signal. When it is in a high-dose radiation field, it will Pulse pile-up occurs, resulting in poor counting linearity.

为了解决上述问题,目前主要采取的方法有两种,第一种是在单一能量条件下,可通过死时间修正技术完成计数线性修正,但在不同能量下其死时间修正系数不同,在实际测量中辐射场射线能量特征往往是不清楚的,因此不能实现在平均有效能量在48keV~1.25MeV范围内高剂量条件下的剂量测量。除此之外,可以采用半导体芯片集成技术代替分列元器件组成的前端探测器电子学系统,在不损失灵敏度的前提下,通过提高脉冲信号输出宽度来解决计数的非线性问题,但是这种方法受到半导体芯片集成技术的制约,成本较高。In order to solve the above problems, there are two main methods currently adopted. The first one is under the single energy condition, the counting linear correction can be completed through the dead time correction technology, but the dead time correction coefficient is different under different energies. In the actual measurement The energy characteristics of rays in the middle radiation field are often unclear, so the dose measurement under the condition of high dose with the average effective energy in the range of 48keV~1.25MeV cannot be realized. In addition, semiconductor chip integration technology can be used to replace the front-end detector electronics system composed of arrayed components, and the non-linear problem of counting can be solved by increasing the output width of the pulse signal without losing sensitivity. The method is restricted by semiconductor chip integration technology, and the cost is relatively high.

本发明为国家重大科学仪器设备开发专项资金资助项目(项目名称:新型电离辐射检测仪器和关键部件开发及应用,项目编号:2013YQ090811)。This invention is a project funded by the special fund for the development of major national scientific instruments and equipment (project name: development and application of new ionizing radiation detection instruments and key components, project number: 2013YQ090811).

发明内容Contents of the invention

【要解决的技术问题】【Technical problems to be solved】

本发明的目的是提供一种双通道计数系统及高剂量条件下剂量当量的测量方法,以解决辐射场平均有效能量在48keV~1.25MeV范围内高剂量条件下的剂量当量测量问题。The purpose of the present invention is to provide a dual-channel counting system and a method for measuring dose equivalent under high dose conditions to solve the problem of measuring dose equivalent under high dose conditions with average effective energy in the radiation field within the range of 48keV-1.25MeV.

【技术方案】【Technical solutions】

本发明是通过以下技术方案实现的。The present invention is achieved through the following technical solutions.

本发明首先涉及一种双通道计数系统,其包括半导体探测器、电荷灵敏放大电路、第一脉冲成形电路、第一比较器、第二脉冲成形电路、第二比较器、MCU,所述第一脉冲成形电路和第二脉冲成形电路分别配置成输出不同幅度和宽度的脉冲信号,所述MCU包括用于对第一比较器的输出脉冲进行计数的第一计数器、用于对第二比较器的输出脉冲进行计数的第二计数器,The present invention firstly relates to a dual-channel counting system, which includes a semiconductor detector, a charge-sensitive amplifier circuit, a first pulse shaping circuit, a first comparator, a second pulse shaping circuit, a second comparator, and an MCU. The pulse shaping circuit and the second pulse shaping circuit are respectively configured to output pulse signals of different amplitudes and widths, and the MCU includes a first counter for counting the output pulses of the first comparator, and a counter for counting the output pulses of the second comparator. A second counter that outputs pulses for counting,

所述电荷灵敏放大电路的输入端与半导体探测器连接,其输出端分别与第一脉冲成形电路的输入端和第二脉冲成形电路的输入端连接;所述第一比较器的输入端分别与第一脉冲成形电路的输出端和第一阈值电压信号源连接,所述第二比较器的输入端分别与第二脉冲成形电路的输出端和第二阈值电压信号源连接,所述第一阈值信号源的电压值与第二阈值信号源的电压值不相等;所述MCU分别与第一比较器的输出端和第二比较器的输出端连接。The input end of the charge-sensitive amplifying circuit is connected with the semiconductor detector, and its output end is respectively connected with the input end of the first pulse shaping circuit and the input end of the second pulse shaping circuit; the input end of the first comparator is connected with the input end of the second pulse shaping circuit respectively; The output end of the first pulse shaping circuit is connected to the first threshold voltage signal source, the input end of the second comparator is respectively connected to the output end of the second pulse shaping circuit and the second threshold voltage signal source, and the first threshold The voltage value of the signal source is not equal to the voltage value of the second threshold signal source; the MCU is respectively connected to the output terminal of the first comparator and the output terminal of the second comparator.

作为一种优选的实施方式,所述电荷灵敏放大电路包括JFET、第一电阻、第二电阻、第一电容和第一运算放大器,所述JFET的栅极作为电荷灵敏放大电路的输入端分别与半导体探测器的阳极、第二电阻的一端、第一电容的一端连接,所述JFET的源极接地,所述JFET的漏极分别与第一电阻的一端、第一运算放大器的输入端连接,所述半导体探测器的阴极、第一电阻的另一端均与第一电压源连接,所述第一运算放大器的输出端作为电荷灵敏放大电路的输出端分别与第二电阻的另一端、第一电容的另一端连接。As a preferred embodiment, the charge-sensitive amplifying circuit includes a JFET, a first resistor, a second resistor, a first capacitor, and a first operational amplifier, and the gate of the JFET is used as an input terminal of the charge-sensitive amplifying circuit to communicate with the The anode of the semiconductor detector, one end of the second resistor, and one end of the first capacitor are connected, the source of the JFET is grounded, and the drain of the JFET is respectively connected with one end of the first resistor and the input end of the first operational amplifier, The cathode of the semiconductor detector and the other end of the first resistor are all connected to the first voltage source, and the output end of the first operational amplifier is respectively connected to the other end of the second resistor and the first voltage source as the output end of the charge sensitive amplifier circuit. The other end of the capacitor is connected.

作为另一种优选的实施方式,所述第一阈值电压信号源的电压值与第二阈值电压信号源的电压值比值小于等于0.8。As another preferred implementation manner, the ratio of the voltage value of the first threshold voltage signal source to the voltage value of the second threshold voltage signal source is less than or equal to 0.8.

作为另一种优选的实施方式,所述半导体探测器为Si-Pin探测器。As another preferred implementation manner, the semiconductor detector is a Si-Pin detector.

本发明还涉及一种高剂量条件下剂量当量的测量方法,该方法包括:The present invention also relates to a method for measuring dose equivalent under high-dose conditions, the method comprising:

步骤A:初始化上述实施方式中任一所述的双通道计数系统;Step A: Initialize the dual-channel counting system described in any one of the above-mentioned embodiments;

步骤B:选择辐射场,所述辐射场为中能辐射场或高能辐射场;Step B: selecting a radiation field, the radiation field is a medium-energy radiation field or a high-energy radiation field;

步骤C:确定测量条件,如果选择的辐射场为中能辐射场,则所述测量条件为辐射源的管电流,如果选择的辐射场为高能辐射场,则所述测量条件为剂量当量测量位置;Step C: Determine the measurement conditions. If the selected radiation field is a medium-energy radiation field, the measurement condition is the tube current of the radiation source; if the selected radiation field is a high-energy radiation field, the measurement condition is the dose equivalent measurement position ;

步骤D:在所确定的测量条件下,采用所述双通道计数系统对辐射源的辐射剂量进行计数,并对第一计数器计数值N1和第二计数器计数值N2进行加权处理得到双通道计数值M1,所述加权处理的公式为:Step D: Under the determined measurement conditions, use the dual-channel counting system to count the radiation dose of the radiation source, and perform weighting processing on the first counter count value N1 and the second counter count value N2 to obtain a dual-channel The count value M 1 , the formula of the weighting process is:

上式中,A的取值为B为时间单位转换因子;In the above formula, the value of A is or B is the time unit conversion factor;

步骤E:在所确定的测量条件下,使用标准计量仪测量得到标准计量仪的测量值D2,对标准计量仪的测量值D2进行换算处理得到标准计量仪换算值M2,所述换算处理的公式为:Step E: Under the determined measurement conditions, use the standard measuring instrument to measure the measured value D 2 of the standard measuring instrument, and convert the measured value D 2 of the standard measuring instrument to obtain the converted value M 2 of the standard measuring instrument. The formula for processing is:

M2=D2·L·H,M 2 =D 2 ·L·H,

上式中L为在137Cs辐射场下的灵敏度因子,H为剂量单位转换因子;In the above formula, L is the sensitivity factor under the 137 Cs radiation field, and H is the dose unit conversion factor;

步骤F:计算标准计量仪换算值M2与双通道计数值M1之间的比值KrStep F: Calculating the ratio K r between the converted value M 2 of the standard meter and the count value M 1 of the two channels;

步骤G:重新确定测量条件,重复步骤D至步骤F,得到不同测量条件下的双通道计数值M1、标准计量仪的测量值D2、比值Kr,将各个测量条件下的双通道计数值M1、比值Kr的倒数、标准计量仪的测量值D2、比值Kr分别保存至第一向量、第二向量、第三向量和第四向量;Step G: Re-determine the measurement conditions, repeat steps D to F to obtain the dual-channel count value M 1 under different measurement conditions, the measurement value D 2 of the standard meter, and the ratio K r , and calculate the dual-channel count value under each measurement condition The value M 1 , the reciprocal of the ratio K r , the measured value D 2 of the standard measuring instrument, and the ratio K r are respectively stored in the first vector, the second vector, the third vector and the fourth vector;

步骤H:对第一向量的数据和第二向量的数据进行线性拟合得到第一直线方程,对第三向量的数据和第四向量的数据进行线性拟合得到第二直线方程;Step H: performing linear fitting on the data of the first vector and the data of the second vector to obtain the first linear equation, and performing linear fitting on the data of the third vector and the data of the fourth vector to obtain the second linear equation;

步骤I:重复步骤B至步骤H直至完成中能辐射场和高能辐射场的测量,具体地,如果步骤B选择的辐射场为中能辐射场,则调整中能辐射场辐射源的管电压,重复步骤C至步骤H,得到中能辐射场在各个管电压条件下的第一直线方程和第二直线方程,如果步骤B选择的辐射场为高能辐射场,则执行步骤C至步骤H得到高能辐射场下的第一直线方程和第二直线方程;Step I: Repeat Step B to Step H until the measurement of the medium-energy radiation field and the high-energy radiation field is completed, specifically, if the radiation field selected in step B is a medium-energy radiation field, then adjust the tube voltage of the radiation source of the medium-energy radiation field, Repeat steps C to H to obtain the first line equation and the second line equation of the medium-energy radiation field under various tube voltage conditions. If the radiation field selected in step B is a high-energy radiation field, then perform steps C to H to obtain The first straight line equation and the second straight line equation under the high energy radiation field;

步骤J:将所有的第一直线方程组合成第一直线方程集合,将所有的第二直线方程组合成第二直线方程集合,在第一直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第一插值方程,在第二直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第二插值方程;Step J: Combine all the first line equations into the first set of line equations, combine all the second line equations into the second set of line equations, and in the first set of line equations, the line equation with the largest slope and The linear equation with the smallest slope is interpolated to obtain the first interpolation equation, and the linear equation with the largest slope and the linear equation with the smallest slope are interpolated in the second set of linear equations to obtain the second interpolation equation;

步骤K:采用第一插值方程和第二插值方程对双通道计数值M1进行修正。Step K: Correct the dual-channel count value M 1 by using the first interpolation equation and the second interpolation equation.

作为一种优选的实施方式,所述步骤K具体包括:As a preferred embodiment, the step K specifically includes:

步骤K1:将双通道计数值M1代入第一插值方程求解得到比值Kr的倒数;Step K1: Substituting the dual-channel count value M1 into the first interpolation equation for solution to obtain the reciprocal of the ratio Kr;

步骤K2:将步骤K1求得的比值Kr代入第二插值方程求解得到修正后的剂量当量值。Step K2: Substitute the ratio K r obtained in step K1 into the second interpolation equation to obtain the corrected dose equivalent value.

作为另一种优选的实施方式,所述中能辐射场为X射线辐射场。As another preferred embodiment, the medium-energy radiation field is an X-ray radiation field.

作为另一种优选的实施方式,所述X射线辐射场的管电压值为100kV、150kV、200kV、250kV或300kV。As another preferred embodiment, the tube voltage value of the X-ray radiation field is 100kV, 150kV, 200kV, 250kV or 300kV.

作为另一种优选的实施方式,所述高能辐射场为60Co辐射场。As another preferred embodiment, the high-energy radiation field is a 60 Co radiation field.

作为另一种优选的实施方式,所述步骤B中辐射场的平均有效能量的范围为48keV~1.25MeV,剂量当量值可调整范围为50mSv/h~1Sv/h。As another preferred embodiment, the average effective energy of the radiation field in the step B ranges from 48keV to 1.25MeV, and the adjustable dose equivalent value ranges from 50mSv/h to 1Sv/h.

【有益效果】【Beneficial effect】

本发明提出的技术方案具有以下有益效果:The technical scheme proposed by the present invention has the following beneficial effects:

(1)本发明采用超低功耗分列元器件,集合Si-PIN探测器,具有硬件成本低廉,实现结构简单,便于批量生产等优点,符合我国国情,可部分代替国外相关仪器,提高了经济效益;(1) The present invention adopts ultra-low power consumption sorting components and integrates Si-PIN detectors, which has the advantages of low hardware cost, simple structure, and convenient mass production. It conforms to my country's national conditions and can partially replace foreign related instruments, improving economic benefits;

(2)本发明采用不同脉冲成形参数和阈值设置,形成两通道计数响应不一致的计数系统。通过大量实验数据分析,采用经验公式,插值运算等计算方式,找出不同能量高剂量条件下,采用同一方程组即可完成高剂量条件下的准确测量方法,因此本发明方法在实际应用中具有方便快捷的特征;(2) The present invention uses different pulse shaping parameters and threshold settings to form a counting system with inconsistent counting responses of the two channels. Through the analysis of a large number of experimental data, using calculation methods such as empirical formulas and interpolation operations, to find out the accurate measurement method under the high-dose conditions of different energies and high-dose conditions, the same equation group can be used to complete the high-dose conditions, so the method of the present invention has great advantages in practical applications. Convenient and fast features;

(3)由于现有技术中的单通道计数方法需在已知射线能量,并通过死时间修正系统的计数,最后乘以已知射线能量条件下的剂量修正因子完成剂量的测量工作。而在实际测量中,辐射场平均有效能量为48keV~1.25Mev的射线能量特征通过单通道计数方法是无法得知的,本发明克服了单通道计数方法在高剂量测量中存在的不足,实现高剂量的准确测量,兼顾半导体探测器计数线性和能量响应的同时修正。(3) Because the single-channel counting method in the prior art needs to correct the counting of the system through the dead time at known ray energy, and finally multiply the dose correction factor under the condition of known ray energy to complete the dose measurement. However, in actual measurement, the energy characteristics of the ray whose average effective energy in the radiation field is 48keV~1.25Mev cannot be known through the single-channel counting method. Accurate measurement of dose, taking into account the simultaneous correction of semiconductor detector count linearity and energy response.

附图说明Description of drawings

图1为本发明的实施例一提供的双通道计数系统的结构框图;Fig. 1 is the structural block diagram of the dual-channel counting system provided by Embodiment 1 of the present invention;

图2为本发明的实施例一提供的双通道计数系统的电路原理图。FIG. 2 is a schematic circuit diagram of a dual-channel counting system provided by Embodiment 1 of the present invention.

具体实施方式detailed description

为使本发明的目的、技术方案和优点更加清楚,下面将结合附图,对本发明的具体实施方式进行清楚、完整的描述,显然,所描述的实施例是本发明的一部分实施例,而不是全部实施例,也不是对本发明的限制。基于本发明的实施例,本领域普通技术人员在不付出创造性劳动前提下所获得的所有其他实施例,都属于本发明的保护范围。In order to make the purpose, technical solutions and advantages of the present invention clearer, the specific implementation manners of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Apparently, the described embodiments are part of the embodiments of the present invention, rather than All examples are not limitations of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

图1为本发明实施例一提供的高剂量条件下剂量当量的双通道计数系统的结构框图,图2为本发明实施例一提供的高剂量条件下剂量当量的双通道计数系统的电路原理图。如图1和图2所示,该系统包括半导体探测器D1、电荷灵敏放大电路、第一脉冲成形电路、第一比较器U4、第二脉冲成形电路、第二比较器U5、MCUU6,其中第一脉冲成形电路和第二脉冲成形电路分别配置成输出不同幅度和宽度的脉冲信号,MCUU6包括用于对第一比较器的输出脉冲进行计数的第一计数器、用于对第二比较器的输出脉冲进行计数的第二计数器。Figure 1 is a structural block diagram of a dual-channel counting system for dose equivalents under high-dose conditions provided by Embodiment 1 of the present invention, and Figure 2 is a schematic circuit diagram of a dual-channel counting system for dose equivalents under high-dose conditions provided by Embodiment 1 of the present invention . As shown in Figure 1 and Figure 2, the system includes a semiconductor detector D1, a charge-sensitive amplifier circuit, a first pulse shaping circuit, a first comparator U4, a second pulse shaping circuit, a second comparator U5, and an MCUU6, wherein the first A pulse shaping circuit and a second pulse shaping circuit are respectively configured to output pulse signals of different amplitudes and widths. pulses to count the second counter.

实施例一中,电荷灵敏放大电路的输入端与半导体探测器D1连接,其输出端分别与第一脉冲成形电路的输入端和第二脉冲成形电路的输入端连接;第一比较器U4的输入端a与第一脉冲成形电路的输出端连接,第一比较器U4的输入端b与第一阈值电压信号源连接,第二比较器U5的输入端c与第二脉冲成形电路的输出端连接,第二比较器U5的输入端d与第二阈值电压信号源连接,第一阈值信号源的电压值与第二阈值信号源的电压值不相等,具体地,第一阈值电压信号源的电压值与第二阈值电压信号源的电压值比值等于0.75;MCU分别与第一比较器U4的输出端和第二比较器U5的输出端连接。In Embodiment 1, the input end of the charge-sensitive amplifier circuit is connected to the semiconductor detector D1, and its output end is respectively connected to the input end of the first pulse shaping circuit and the input end of the second pulse shaping circuit; the input end of the first comparator U4 Terminal a is connected to the output terminal of the first pulse shaping circuit, the input terminal b of the first comparator U4 is connected to the first threshold voltage signal source, and the input terminal c of the second comparator U5 is connected to the output terminal of the second pulse shaping circuit , the input terminal d of the second comparator U5 is connected to the second threshold voltage signal source, the voltage value of the first threshold signal source is not equal to the voltage value of the second threshold signal source, specifically, the voltage of the first threshold voltage signal source The ratio of the value to the voltage value of the second threshold voltage signal source is equal to 0.75; the MCU is respectively connected to the output terminal of the first comparator U4 and the output terminal of the second comparator U5.

实施例一中,电荷灵敏放大电路包括JFETQ1、电阻R1、电阻R10、电容C1和运算放大器U1,JFETQ1的栅极作为电荷灵敏放大电路的输入端分别与半导体探测器D1的阳极、电阻R1的一端、电容C1的一端连接,JFETQ1的源极接地GND,JFETQ1的漏极分别与电阻R10的一端、运算放大器U1的输入端连接,半导体探测器D1的阴极、电阻R10的另一端均与电压源VCC连接,运算放大器U1的输出端作为电荷灵敏放大电路的输出端分别与电阻R1的另一端、电容C1的另一端连接。In the first embodiment, the charge-sensitive amplifying circuit includes JFETQ1, resistor R1, resistor R10, capacitor C1 and operational amplifier U1, and the gate of JFETQ1 is connected with the anode of semiconductor detector D1 and one end of resistor R1 respectively as the input end of the charge-sensitive amplifying circuit. , one end of capacitor C1 is connected, the source of JFETQ1 is grounded to GND, the drain of JFETQ1 is respectively connected to one end of resistor R10 and the input end of operational amplifier U1, the cathode of semiconductor detector D1, and the other end of resistor R10 are connected to voltage source VCC The output terminal of the operational amplifier U1 is used as the output terminal of the charge sensitive amplifier circuit to be respectively connected to the other end of the resistor R1 and the other end of the capacitor C1.

实施例一中,第一脉冲成形电路包括电阻R2、电阻R3、电阻R4、电阻R5、电容C2、电容C3、运算放大器U2。电阻R2的一端作为第一脉冲成形电路的输入端,其另一端分别与电容C2的一端、电阻R3的一端连接;电阻R3的另一端分别与电容C3的一端、运算放大器U2的同相输入端连接;电容C3的另一端接地GND;运算放大器U2的反相输入端分别与电阻R4的一端、电阻R5的一端连接;电阻R4的另一端接地GND;运算放大器U2的输出端作为第一脉冲成形电路的输出端,其分别与电阻R5的另一端、电容C2的另一端连接。In Embodiment 1, the first pulse shaping circuit includes a resistor R2, a resistor R3, a resistor R4, a resistor R5, a capacitor C2, a capacitor C3, and an operational amplifier U2. One end of the resistor R2 is used as the input end of the first pulse shaping circuit, and the other end is respectively connected with one end of the capacitor C2 and one end of the resistor R3; the other end of the resistor R3 is respectively connected with one end of the capacitor C3 and the non-inverting input end of the operational amplifier U2 The other end of the capacitor C3 is grounded to GND; the inverting input terminal of the operational amplifier U2 is connected to one end of the resistor R4 and one end of the resistor R5 respectively; the other end of the resistor R4 is grounded to GND; the output terminal of the operational amplifier U2 is used as the first pulse shaping circuit The output terminals of the resistor R5 are respectively connected to the other end of the resistor R5 and the other end of the capacitor C2.

实施例一中,第二脉冲成形电路包括电阻R6、电阻R7、电阻R8、电阻R9、电容C4、电容C5、运算放大器U3。电阻R6的一端作为第二脉冲成形电路的输入端,其另一端分别与电容C4的一端、电阻R7的一端连接;电阻R7的另一端分别与电容C5的一端、运算放大器U3的同相输入端连接;电容C5的另一端接地GND;运算放大器U3的反相输入端分别与电阻R8的一端、电阻R9的一端连接;电阻R8的另一端接地GND;运算放大器U3的输出端作为第一脉冲成形电路的输出端,其分别与电阻R9的另一端、电容C4的另一端连接。In Embodiment 1, the second pulse shaping circuit includes a resistor R6, a resistor R7, a resistor R8, a resistor R9, a capacitor C4, a capacitor C5, and an operational amplifier U3. One end of the resistor R6 is used as the input end of the second pulse shaping circuit, and the other end is respectively connected with one end of the capacitor C4 and one end of the resistor R7; the other end of the resistor R7 is respectively connected with one end of the capacitor C5 and the non-inverting input end of the operational amplifier U3 The other end of the capacitor C5 is grounded to GND; the inverting input terminal of the operational amplifier U3 is connected to one end of the resistor R8 and one end of the resistor R9 respectively; the other end of the resistor R8 is grounded to GND; the output terminal of the operational amplifier U3 is used as the first pulse shaping circuit The output terminals of the resistor R9 are respectively connected to the other end of the resistor R9 and the other end of the capacitor C4.

采用实施例一提供的双通道计数系统实现高剂量条件下剂量当量的测量方法可以参考下述具体方法实施例。For the method of measuring dose equivalent under high dose conditions using the dual-channel counting system provided in Example 1, reference may be made to the following specific method examples.

实施例二提供一种高剂量条件下剂量当量的测量方法,该方法包括:Embodiment 2 provides a method for measuring dose equivalent under high-dose conditions, the method comprising:

步骤一:初始化双通道计数系统。Step 1: Initialize the dual-channel counting system.

具体地,初始化实施例一所提供的双通道计数系统。配置第一脉冲成形电路和第二脉冲成形电路,使第一脉冲成形电路和第二脉冲成形电路输出不同幅度和宽度的脉冲信号;配置第一阈值电压信号源和第二阈值电压信号源,使第一阈值电压信号源的电压值与第二阈值电压信号源的电压值的比值等于0.75。Specifically, the dual-channel counting system provided in Embodiment 1 is initialized. Configure the first pulse shaping circuit and the second pulse shaping circuit so that the first pulse shaping circuit and the second pulse shaping circuit output pulse signals with different amplitudes and widths; configure the first threshold voltage signal source and the second threshold voltage signal source so that The ratio of the voltage value of the first threshold voltage signal source to the voltage value of the second threshold voltage signal source is equal to 0.75.

步骤二:选择X射线辐射场作为中能辐射场,并设置X射线辐射场的管电压。具体地,X射线辐射场的管电压值为100kV、150kV、200kV、250kV或300kV。需要说明,本实施例中,辐射场的平均有效能量的范围为48keV~1.25MeV,剂量当量值可调整范围为50mSv/h~1Sv/h。Step 2: Select the X-ray radiation field as the medium-energy radiation field, and set the tube voltage of the X-ray radiation field. Specifically, the tube voltage value of the X-ray radiation field is 100 kV, 150 kV, 200 kV, 250 kV or 300 kV. It should be noted that in this embodiment, the average effective energy of the radiation field ranges from 48keV to 1.25MeV, and the dose equivalent value can be adjusted from 50mSv/h to 1Sv/h.

步骤三:设定X射线辐射场的管电流。在每个管电压值下,通过改变管电流实现剂量当量值的调整,需要说明,剂量当量值调整范围为50mSv/h~1Sv/h。Step 3: setting the tube current of the X-ray radiation field. Under each tube voltage value, the dose equivalent value is adjusted by changing the tube current. It should be noted that the dose equivalent value adjustment range is 50mSv/h~1Sv/h.

步骤四:采用双通道计数系统对辐射源的辐射剂量进行计数,并对第一计数器计数值N1和第二计数器计数值N2进行加权处理得到双通道计数值M1,其中加权处理的公式为:Step 4: Use a dual-channel counting system to count the radiation dose of the radiation source, and perform weighting processing on the first counter count value N 1 and the second counter count value N 2 to obtain a dual-channel count value M 1 , wherein the formula for weighting processing for:

上式中,A的取值为B为时间单位转换因子,用于将时间单位统一为小时。In the above formula, the value of A is B is the time unit conversion factor, which is used to unify the time unit into hours.

步骤五:在与步骤四测量条件相同的情况下,使用标准计量仪测量得到标准计量仪的测量值D2,对标准计量仪的测量值D2进行换算处理得到标准计量仪换算值M2,所述换算处理的公式为:Step 5: Under the same measurement conditions as Step 4, use a standard meter to measure the measured value D 2 of the standard meter, and convert the measured value D 2 of the standard meter to obtain the converted value M 2 of the standard meter. The formula for the conversion process is:

M2=D2·L·H,M 2 =D 2 ·L·H,

上式中L为在137Cs辐射场下的灵敏度因子,表示在137Cs辐射条件下,双通道计数系统每小时的双通道计数值与标准计量仪的测量值的比值,具体地,本实施例中通过在辐射防护标准实验室,采用137Cs进行伽玛灵敏度测量,求得灵敏度因子L为214.3;H为剂量单位转换因子,用于将mSv换算至μSv,由于标准计量仪的测量值的单位为mSv,因此本实施例中H取值为1000。In the above formula, L is the sensitivity factor under the 137 Cs radiation field, which means that under the 137 Cs radiation condition, the ratio of the double-channel count value per hour of the dual-channel counting system to the measured value of the standard meter, specifically, this embodiment In the radiation protection standard laboratory, 137 Cs is used for gamma sensitivity measurement, and the sensitivity factor L is 214.3; H is the dose unit conversion factor, which is used to convert mSv to μSv, because the unit of the measurement value of the standard meter is is mSv, so the value of H in this embodiment is 1000.

步骤六:计算标准计量仪换算值M2与双通道计数值M1之间的比值KrStep 6: Calculate the ratio K r between the converted value M 2 of the standard meter and the count value M 1 of the two channels;

步骤七:重新设定X射线辐射场的管电流,重复步骤四至步骤六,得到不同管电流条件下的双通道计数值M1、标准计量仪的测量值D2、比值Kr,将各个测量条件下的双通道计数值M1、比值Kr的倒数、标准计量仪的测量值D2、比值Kr分别保存至第一向量、第二向量、第三向量和第四向量;Step 7: Reset the tube current of the X-ray radiation field, repeat steps 4 to 6, and obtain the dual-channel count value M 1 , the measured value D 2 of the standard meter, and the ratio K r under different tube current conditions, and convert each measurement Under the conditions, the dual-channel count value M 1 , the reciprocal of the ratio K r , the measured value D 2 of the standard meter, and the ratio K r are respectively stored in the first vector, the second vector, the third vector and the fourth vector;

步骤八:对步骤七中第一向量的数据和第二向量的数据进行线性拟合得到第一直线方程,对第三向量的数据和第四向量的数据进行线性拟合得到第二直线方程。Step 8: Perform linear fitting on the data of the first vector and the data of the second vector in step 7 to obtain the first line equation, and perform linear fitting on the data of the third vector and the data of the fourth vector to obtain the second line equation .

步骤九:重复步骤二至步骤八直至完成X射线辐射场在各个管电压条件下的第一直线方程和第二直线方程。Step 9: Repeat steps 2 to 8 until the first linear equation and the second linear equation of the X-ray radiation field under various tube voltage conditions are completed.

步骤十:选择60Co辐射场作为高能辐射场。需要说明,本实施例中,辐射场的平均有效能量的范围为48keV~1.25MeV,剂量当量值可调整范围为50mSv/h~1Sv/h。Step 10: Select 60 Co radiation field as the high-energy radiation field. It should be noted that in this embodiment, the average effective energy of the radiation field ranges from 48keV to 1.25MeV, and the dose equivalent value can be adjusted from 50mSv/h to 1Sv/h.

步骤十一:确定剂量当量测量位置,即确定在辐射场的哪个位置进行测量。该步骤用于调整剂量当量值,具体可通过改变仪器测量距离实现剂量当量值的调整,需要说明,剂量当量值调整范围为50mSv/h~1Sv/h。Step 11: Determine the dose equivalent measurement position, that is, determine the position in the radiation field for measurement. This step is used to adjust the dose equivalent value. Specifically, the adjustment of the dose equivalent value can be realized by changing the measuring distance of the instrument. It should be noted that the dose equivalent value adjustment range is 50mSv/h~1Sv/h.

步骤十二:采用双通道计数系统对辐射源的辐射剂量进行计数,并对第一计数器计数值N1和第二计数器计数值N2进行加权处理得到双通道计数值M1,其中加权处理的公式为:Step 12: Use a dual-channel counting system to count the radiation dose of the radiation source, and perform weighted processing on the first counter count value N 1 and the second counter count value N 2 to obtain a dual-channel count value M 1 , where the weighted The formula is:

上式中,A的取值为B为时间单位转换因子,用于将时间单位统一为小时。In the above formula, the value of A is B is the time unit conversion factor, which is used to unify the time unit into hours.

步骤十三:在与步骤十二测量条件相同的情况下,使用标准计量仪测量得到标准计量仪的测量值D2,对标准计量仪的测量值D2进行换算处理得到标准计量仪换算值M2,所述换算处理的公式为:Step 13: Under the same measurement conditions as Step 12, use a standard meter to measure the measured value D 2 of the standard meter, and convert the measured value D 2 of the standard meter to obtain the converted value M of the standard meter 2. The formula for the conversion process is:

M2=D2·L·H,M 2 =D 2 ·L·H,

上式中L为在137Cs辐射场下的灵敏度因子,表示在137Cs辐射条件下,双通道计数系统每小时的双通道计数值与标准计量仪的测量值的比值,具体地,本实施例中通过在辐射防护标准实验室,采用137Cs进行伽玛灵敏度测量,求得灵敏度因子L为214.3;H为剂量单位转换因子,用于将mSv换算至μSv,由于采用标准计量仪的测量值的单位为mSv,因此本实施例中H取值为1000。In the above formula, L is the sensitivity factor under the 137 Cs radiation field, which means that under the 137 Cs radiation condition, the ratio of the double-channel count value per hour of the dual-channel counting system to the measured value of the standard meter, specifically, this embodiment In the radiation protection standard laboratory, 137 Cs is used for gamma sensitivity measurement, and the sensitivity factor L is 214.3; H is the dose unit conversion factor, which is used to convert mSv to μSv. The unit is mSv, so the value of H in this embodiment is 1000.

步骤十四:重新设定剂量当量测量位置,重复步骤十二至步骤十三,得到不同剂量当量测量位置下的双通道计数值M1、标准计量仪的测量值D2、比值Kr,将各个测量条件下的双通道计数值M1、比值Kr的倒数、标准计量仪的测量值D2、比值Kr分别保存至第一向量、第二向量、第三向量和第四向量。Step 14: Reset the dose equivalent measurement position, repeat steps 12 to 13 to obtain the dual-channel count value M 1 , the measurement value D 2 of the standard meter, and the ratio K r at different dose equivalent measurement positions, and set The dual-channel count value M 1 , the reciprocal of the ratio K r under each measurement condition, the measured value D 2 of the standard meter, and the ratio K r are stored in the first vector, the second vector, the third vector and the fourth vector respectively.

步骤十五:对步骤十四中第一向量的数据和第二向量的数据进行线性拟合得到第一直线方程,对第三向量的数据和第四向量的数据进行线性拟合得到第二直线方程。Step 15: Perform linear fitting on the data of the first vector and the data of the second vector in step 14 to obtain the first line equation, and perform linear fitting on the data of the third vector and the data of the fourth vector to obtain the second straight line equation.

步骤十六:将步骤九和步骤十五中得到的所有的第一直线方程组合成第一直线方程集合,将步骤九和步骤十五中得到的所有的第二直线方程组合成第二直线方程集合,在第一直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第一插值方程,在第二直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第二插值方程。Step 16: combine all the first line equations obtained in step 9 and step 15 into the first set of line equations, and combine all the second line equations obtained in step 9 and step 15 into the second set A set of straight line equations. In the first set of straight line equations, interpolation is performed on the straight line equation with the largest slope and the straight line equation with the smallest slope to obtain the first interpolation equation. In the second set of straight line equations, the straight line equation with the largest slope and the smallest slope are interpolated. The linear equation is interpolated to obtain the second interpolation equation.

下面简单说明具体地插值方法。设斜率最大的直线方程为:The specific interpolation method will be briefly described below. Let the equation of the straight line with the largest slope be:

y=a1x+b1,其中a1、b1为常数,y=a 1 x+b 1 , where a 1 and b 1 are constants,

斜率最小的直线方程为:The equation of the straight line with the smallest slope is:

y=a2x+b2,其中a2、b2为常数,y=a 2 x+b 2 , where a 2 and b 2 are constants,

则插值得到的插值方程为:y=(a1+a2)x/2+(b1+b2)/2。Then the interpolation equation obtained by interpolation is: y=(a 1 +a 2 )x/2+(b 1 +b 2 )/2.

步骤十七:采用第一插值方程和第二插值方程对双通道计数值M1进行修正。Step seventeen: Correct the dual-channel count value M 1 by using the first interpolation equation and the second interpolation equation.

具体地,假设第一插值方程为:y=-2.6029e-8x+1.1098,第二插值方程为:y=0.00494875x+1.047755,将双通道计数值M1作为x变量代入第一插值方程,求解得出y变量,求解得出的y变量即为比值Kr的倒数,将求解得出y取倒数后作为y变量代入第二插值方程,求解得出x变量的值即为修正后的剂量当量值。Specifically, assuming that the first interpolation equation is: y=-2.6029e- 8 x+1.1098, the second interpolation equation is: y=0.00494875x+1.047755, and the dual-channel count value M 1 is substituted into the first interpolation equation as the x variable, The y variable obtained from the solution is the reciprocal of the ratio K r , and the reciprocal of y obtained from the solution is used as the y variable to be substituted into the second interpolation equation, and the value of the x variable obtained from the solution is the corrected dose equivalent value.

需要说明,实施例二中,步骤二至步骤九为中能测量部分,步骤十至步骤十五为高能测量部分,本实施例并不限制中能测量部分和高能测量部分的执行顺序,即也可以先进行高能测量,然后再进行中能测量。It should be noted that in Embodiment 2, steps 2 to 9 are the medium-energy measurement part, and steps 10 to 15 are the high-energy measurement part. This embodiment does not limit the execution order of the medium-energy measurement part and the high-energy measurement part, that is, High-energy measurements can be performed first, followed by medium-energy measurements.

从以上实施例可以看出:As can be seen from the above examples:

本发明实施例采用超低功耗分列元器件,集合Si-PIN探测器,具有硬件成本低廉,实现结构简单,便于批量生产等优点,符合我国国情,可部分代替国外相关仪器,提高了经济效益;The embodiment of the present invention adopts ultra-low power consumption components and integrates Si-PIN detectors, which has the advantages of low hardware cost, simple structure, and convenient mass production. benefit;

本发明实施例采用不同脉冲成形参数和阈值设置,形成两通道计数响应不一致的计数系统。通过大量实验数据分析,采用经验公式,插值运算等计算方式,找出不同能量高剂量条件下,采用同一方程组即可完成高剂量条件下的准确测量方法,因此本发明方法在实际应用中具有方便快捷的特征;The embodiment of the present invention uses different pulse shaping parameters and threshold settings to form a counting system with inconsistent counting responses of the two channels. Through the analysis of a large number of experimental data, using calculation methods such as empirical formulas and interpolation operations, to find out the accurate measurement method under the high-dose conditions of different energies and high-dose conditions, the same equation group can be used to complete the high-dose conditions, so the method of the present invention has great advantages in practical applications. Convenient and fast features;

由于现有技术中的单通道计数方法需在已知射线能量,并通过死时间修正系统的计数,最后乘以已知射线能量条件下的剂量修正因子完成剂量的测量工作。而在实际测量中,辐射场平均有效能量为48keV~1.25Mev的射线能量特征通过单通道计数方法是无法得知的,本发明实施例克服了单通道计数方法在高剂量测量中存在的不足,实现高剂量的准确测量,兼顾半导体探测器计数线性和能量响应的同时修正。Because the single-channel counting method in the prior art needs to correct the counting of the system through the dead time at known ray energy, and finally multiply the dose correction factor under the condition of known ray energy to complete the dose measurement. However, in actual measurement, the energy characteristics of the ray whose average effective energy in the radiation field is 48keV-1.25Mev cannot be known through the single-channel counting method. The embodiment of the present invention overcomes the shortcomings of the single-channel counting method in high-dose measurement. Accurate measurement of high dose is achieved, taking into account the simultaneous correction of semiconductor detector count linearity and energy response.

Claims (9)

1.一种双通道计数系统,其特征在于:其包括半导体探测器、电荷灵敏放大电路、第一脉冲成形电路、第一比较器、第二脉冲成形电路、第二比较器、MCU,所述第一脉冲成形电路和第二脉冲成形电路分别配置成输出不同幅度和宽度的脉冲信号,所述MCU包括用于对第一比较器的输出脉冲进行计数的第一计数器、用于对第二比较器的输出脉冲进行计数的第二计数器,1. A dual-channel counting system is characterized in that: it comprises a semiconductor detector, a charge-sensitive amplifier circuit, a first pulse shaping circuit, a first comparator, a second pulse shaping circuit, a second comparator, an MCU, and the The first pulse shaping circuit and the second pulse shaping circuit are respectively configured to output pulse signals of different amplitudes and widths, the MCU includes a first counter for counting the output pulses of the first comparator, and a second counter for comparing The output pulses of the tor are counted by the second counter, 所述电荷灵敏放大电路的输入端与半导体探测器连接,其输出端分别与第一脉冲成形电路的输入端和第二脉冲成形电路的输入端连接;所述第一比较器的输入端分别与第一脉冲成形电路的输出端和第一阈值电压信号源连接,所述第二比较器的输入端分别与第二脉冲成形电路的输出端和第二阈值电压信号源连接,所述第一阈值信号源的电压值与第二阈值信号源的电压值不相等;所述MCU分别与第一比较器的输出端和第二比较器的输出端连接。The input end of the charge-sensitive amplifying circuit is connected with the semiconductor detector, and its output end is respectively connected with the input end of the first pulse shaping circuit and the input end of the second pulse shaping circuit; the input end of the first comparator is connected with the input end of the second pulse shaping circuit respectively; The output end of the first pulse shaping circuit is connected to the first threshold voltage signal source, the input end of the second comparator is respectively connected to the output end of the second pulse shaping circuit and the second threshold voltage signal source, and the first threshold The voltage value of the signal source is not equal to the voltage value of the second threshold signal source; the MCU is respectively connected to the output terminal of the first comparator and the output terminal of the second comparator. 2.根据权利要求1所述的双通道计数系统,其特征在于所述电荷灵敏放大电路包括JFET、第一电阻、第二电阻、第一电容和第一运算放大器,所述JFET的栅极作为电荷灵敏放大电路的输入端分别与半导体探测器的阳极、第二电阻的一端、第一电容的一端连接,所述JFET的源极接地,所述JFET的漏极分别与第一电阻的一端、第一运算放大器的输入端连接,所述半导体探测器的阴极、第一电阻的另一端均与第一电压源连接,所述第一运算放大器的输出端作为电荷灵敏放大电路的输出端分别与第二电阻的另一端、第一电容的另一端连接。2. The dual-channel counting system according to claim 1, wherein the charge-sensitive amplifier circuit comprises a JFET, a first resistor, a second resistor, a first capacitor and a first operational amplifier, and the gate of the JFET serves as The input end of the charge-sensitive amplifying circuit is respectively connected to the anode of the semiconductor detector, one end of the second resistor, and one end of the first capacitor, the source of the JFET is grounded, and the drain of the JFET is respectively connected to one end of the first resistor, The input terminal of the first operational amplifier is connected, the cathode of the semiconductor detector and the other end of the first resistor are connected with the first voltage source, and the output terminal of the first operational amplifier is respectively connected with the output terminal of the charge sensitive amplifier circuit The other end of the second resistor is connected to the other end of the first capacitor. 3.根据权利要求1或2所述的双通道计数系统,其特征在于所述第一阈值电压信号源的电压值与第二阈值电压信号源的电压值比值小于等于0.8。3. The dual-channel counting system according to claim 1 or 2, characterized in that the ratio of the voltage value of the first threshold voltage signal source to the voltage value of the second threshold voltage signal source is less than or equal to 0.8. 4.根据权利要求1所述的双通道计数系统,其特征在于所述半导体探测器为Si-Pin探测器。4. The dual-channel counting system according to claim 1, characterized in that the semiconductor detector is a Si-Pin detector. 5.一种高剂量条件下剂量当量的测量方法,其特征在于包括:5. A method for measuring dose equivalent under high-dose conditions, characterized in that it comprises: 步骤A:初始化权利要求1至4中任一所述的双通道计数系统;Step A: initializing the dual-channel counting system described in any one of claims 1 to 4; 步骤B:选择辐射场,所述辐射场为中能辐射场或高能辐射场;Step B: selecting a radiation field, the radiation field is a medium-energy radiation field or a high-energy radiation field; 步骤C:确定测量条件,如果选择的辐射场为中能辐射场,则所述测量条件为辐射源的管电流,如果选择的辐射场为高能辐射场,则所述测量条件为剂量当量测量位置;Step C: Determine the measurement conditions. If the selected radiation field is a medium-energy radiation field, the measurement condition is the tube current of the radiation source; if the selected radiation field is a high-energy radiation field, the measurement condition is the dose equivalent measurement position ; 步骤D:在所确定的测量条件下,采用所述双通道计数系统对辐射源的辐射剂量进行计数,并对第一计数器计数值N1和第二计数器计数值N2进行加权处理得到双通道计数值M1,所述加权处理的公式为:Step D: Under the determined measurement conditions, use the dual-channel counting system to count the radiation dose of the radiation source, and perform weighting processing on the first counter count value N1 and the second counter count value N2 to obtain a dual-channel The count value M 1 , the formula of the weighting process is: Mm 11 == 11 22 ·&Center Dot; (( NN 11 ++ NN 22 )) ·&Center Dot; AA ·&Center Dot; BB ,, 上式中,A的取值为B为时间单位转换因子;In the above formula, the value of A is or B is the time unit conversion factor; 步骤E:在所确定的测量条件下,使用标准计量仪测量得到标准计量仪的测量值D2,对标准计量仪的测量值D2进行换算处理得到标准计量仪换算值M2,所述换算处理的公式为:Step E: Under the determined measurement conditions, use the standard measuring instrument to measure the measured value D 2 of the standard measuring instrument, and convert the measured value D 2 of the standard measuring instrument to obtain the converted value M 2 of the standard measuring instrument. The formula for processing is: M2=D2·L·H,M 2 =D 2 ·L·H, 上式中L为在137Cs辐射场下的灵敏度因子,H为剂量单位转换因子;In the above formula, L is the sensitivity factor under the 137 Cs radiation field, and H is the dose unit conversion factor; 步骤F:计算标准计量仪换算值M2与双通道计数值M1之间的比值KrStep F: Calculating the ratio K r between the converted value M 2 of the standard meter and the count value M 1 of the two channels; 步骤G:重新确定测量条件,重复步骤D至步骤F,得到不同测量条件下的双通道计数值M1、标准计量仪的测量值D2、比值Kr,将各个测量条件下的双通道计数值M1、比值Kr的倒数、标准计量仪的测量值D2、比值Kr分别保存至第一向量、第二向量、第三向量和第四向量;Step G: Re-determine the measurement conditions, repeat steps D to F to obtain the dual-channel count value M 1 under different measurement conditions, the measurement value D 2 of the standard meter, and the ratio K r , and calculate the dual-channel count value under each measurement condition The value M 1 , the reciprocal of the ratio K r , the measured value D 2 of the standard measuring instrument, and the ratio K r are respectively stored in the first vector, the second vector, the third vector and the fourth vector; 步骤H:对第一向量的数据和第二向量的数据进行线性拟合得到第一直线方程,对第三向量的数据和第四向量的数据进行线性拟合得到第二直线方程;Step H: performing linear fitting on the data of the first vector and the data of the second vector to obtain the first linear equation, and performing linear fitting on the data of the third vector and the data of the fourth vector to obtain the second linear equation; 步骤I:重复步骤B至步骤H直至完成中能辐射场和高能辐射场的测量,具体地,如果步骤B选择的辐射场为中能辐射场,则调整中能辐射场辐射源的管电压,重复步骤C至步骤H,得到中能辐射场在各个管电压条件下的第一直线方程和第二直线方程,如果步骤B选择的辐射场为高能辐射场,则执行步骤C至步骤H得到高能辐射场下的第一直线方程和第二直线方程;Step I: Repeat Step B to Step H until the measurement of the medium-energy radiation field and the high-energy radiation field is completed, specifically, if the radiation field selected in step B is a medium-energy radiation field, then adjust the tube voltage of the radiation source of the medium-energy radiation field, Repeat steps C to H to obtain the first line equation and the second line equation of the medium-energy radiation field under various tube voltage conditions. If the radiation field selected in step B is a high-energy radiation field, then perform steps C to H to obtain The first straight line equation and the second straight line equation under the high energy radiation field; 步骤J:将所有的第一直线方程组合成第一直线方程集合,将所有的第二直线方程组合成第二直线方程集合,在第一直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第一插值方程,在第二直线方程集合中对斜率最大的直线方程和斜率最小的直线方程作插值处理得到第二插值方程;Step J: Combine all the first line equations into the first set of line equations, combine all the second line equations into the second set of line equations, and in the first set of line equations, the line equation with the largest slope and The linear equation with the smallest slope is interpolated to obtain the first interpolation equation, and the linear equation with the largest slope and the linear equation with the smallest slope are interpolated in the second set of linear equations to obtain the second interpolation equation; 步骤K:采用第一插值方程和第二插值方程对双通道计数值M1进行修正,Step K: using the first interpolation equation and the second interpolation equation to correct the dual - channel count value M1, 所述步骤K具体包括:Described step K specifically comprises: 步骤K1:将双通道计数值M1代入第一插值方程求解得到比值Kr的倒数;Step K1: Substituting the dual-channel count value M1 into the first interpolation equation for solution to obtain the reciprocal of the ratio Kr; 步骤K2:将步骤K1求得的比值Kr代入第二插值方程求解得到修正后的剂量当量值。Step K2: Substitute the ratio K r obtained in step K1 into the second interpolation equation to obtain the corrected dose equivalent value. 6.根据权利要求5所述的高剂量条件下剂量当量的测量方法,其特征在于所述中能辐射场为X射线辐射场。6. The method for measuring dose equivalent under high-dose conditions according to claim 5, characterized in that the medium-energy radiation field is an X-ray radiation field. 7.根据权利要求6所述的高剂量条件下剂量当量的测量方法,其特征在于所述X射线辐射场的管电压值为100kV、150kV、200kV、250kV或300kV。7. The method for measuring dose equivalent under high dose conditions according to claim 6, characterized in that the tube voltage value of the X-ray radiation field is 100kV, 150kV, 200kV, 250kV or 300kV. 8.根据权利要求5所述的高剂量条件下剂量当量的测量方法,其特征在于所述高能辐射场为60Co辐射场。8. The method for measuring dose equivalent under high-dose conditions according to claim 5, characterized in that the high-energy radiation field is 60 Co radiation field. 9.根据权利要求5所述的高剂量条件下剂量当量的测量方法,其特征在于所述步骤B中辐射场的平均有效能量的范围为48keV~1.25MeV,剂量当量值可调整范围为50mSv/h~1Sv/h。9. The method for measuring dose equivalent under high dose conditions according to claim 5, characterized in that the range of the average effective energy of the radiation field in the step B is 48keV~1.25MeV, and the adjustable range of dose equivalent value is 50mSv /h~1Sv/h.
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