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CN104662251A - Diamond cutting elements for drill bits seeded with HCP crystalline material - Google Patents

Diamond cutting elements for drill bits seeded with HCP crystalline material Download PDF

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CN104662251A
CN104662251A CN201380036169.6A CN201380036169A CN104662251A CN 104662251 A CN104662251 A CN 104662251A CN 201380036169 A CN201380036169 A CN 201380036169A CN 104662251 A CN104662251 A CN 104662251A
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diamond
crystal material
seed crystal
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A·D·穆尔多克
M·D·穆玛
J·M·克莱格
W·H·达博斯
N·A·鲍登
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Aunar Draws Drilling Technique LP
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    • E21B10/00Drill bits
    • E21B10/46Drill bits characterised by wear resisting parts, e.g. diamond inserts
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Abstract

附接或结合到衬底上以形成用于钻头的切刀的聚晶金刚石复合片(PDC),包含散布有具有六方密堆积(HCP)晶体结构的晶种材料的烧结聚晶金刚石。将靠近烧结聚晶金刚石结构的一个或多个在烧结之前接种HCP晶种材料的工作表面的所述烧结聚晶金刚石结构的区域进行沥滤以去除催化剂。选择性地接种烧结聚晶金刚石结构的部分或区域允许不同的沥滤速率以形成具有不同距离或深度和几何形状的沥滤区域。Polycrystalline diamond composites (PDCs) attached or bonded to a substrate to form cutters for drill bits comprise sintered polycrystalline diamond with seed material dispersed in it having a hexagonal close-packed (HCP) crystal structure. One or more regions of the sintered polycrystalline diamond structure, adjacent to the working surface in which HCP seed material was seeded prior to sintering, are leached to remove catalyst. Selective seeding of portions or regions of the sintered polycrystalline diamond structure allows for different leaching rates to form leaching zones with varying distances or depths and geometries.

Description

接种有HCP晶体材料的用于钻头的金刚石切割部件Diamond cut components for drill bits seeded with HCP crystalline material

技术领域technical field

本发明总体上涉及用于陆地钻探的钻头(drill bit)的切割部件。The present invention relates generally to cutting elements for drill bits for land drilling.

背景技术Background technique

在钻油井和天然气井时,存在两种基本类型的用于钻透地下岩层的钻头:刮刀钻头(drag bit)和牙轮钻头(roller cone bit)。When drilling oil and gas wells, there are two basic types of bits used to drill through subterranean formations: the drag bit and the roller cone bit.

刮刀钻头不具有活动部件。当刮刀钻头通常通过旋转其附接的钻柱而旋转时,贴附在钻头面上的离散切割部件(“切刀(cutter)”)刮削横跨井底,铲削或剪切地层。将旋转式刮刀钻头的每一个切刀都定位并定向在刮刀钻头的面上,使得将被称为其磨损表面的一部分面在钻头旋转时啮合地层。切刀以固定的预定样式分隔在钻头主体的切割外表面或面上。切刀通常沿若干刀片(blade)的每一个排列,所述刀片为突出的脊,通常以扫掠(sweep)方式(而不是直线)从钻头的中心轴向所述面的周边总体上径向延伸。沿每个刀片的切刀提供对地层预定的切割剖面,在钻头旋转时剪切地层。钻孔流体沿钻柱向下泵入钻头中心形成的中心通道内、然后通过钻头面内形成的出口离开,所述流体既冷却切刀并又协助在刀片之间去除和搬运切屑(cutting)。Drag bits have no moving parts. As a drag bit is rotated, typically by rotating the drill string to which it is attached, discrete cutting elements ("cutters") attached to the bit face scrape across the bottom of the hole, scraping or shearing the formation. Each cutter of a rotary drag bit is positioned and oriented on a face of the drag bit such that a portion of the face, which will be referred to as its wear surface, engages the formation as the bit rotates. The cutters are spaced in a fixed predetermined pattern on the cutting outer surface or face of the bit body. The cutters are usually arranged along each of several blades, which are raised ridges generally radially from the center of the bit to the periphery of the face, usually in a sweep (rather than a straight line) extend. Cutters along each blade provide a predetermined cutting profile to the formation, shearing the formation as the bit rotates. Drilling fluid is pumped down the drill string into a central channel formed in the center of the drill bit and exits through outlets formed in the face of the drill bit, which fluid both cools the cutters and assists in removing and transporting cuttings between the blades.

牙轮钻头包括两个或三个锥形切刀,其围绕与钻头的旋转轴成35度角的轴旋转。当钻头旋转时,牙轮(cone)横跨孔的底部滚动。当岩石通过牙轮和地层之间时,牙轮表面上的切割部件——也称为切刀——将该岩石压碎。A roller cone bit includes two or three conical cutters that rotate about an axis that is at a 35 degree angle to the bit's axis of rotation. As the bit rotates, the cone rolls across the bottom of the hole. As rock passes between the cone and the formation, cutting elements—also called knives—on the face of the cone crush the rock.

为了改进钻头的性能,所述切割部件的磨损表面或工作表面中的一个或多个由以附接到衬底的聚晶金刚石复合片(“PDC”)形式存在的聚晶金刚石(“PCD”)层制得。一种常见的衬底是胶结(cemented)碳化钨。PDC制成后将其结合到衬底上,并且PDC结合的衬底包含所述切刀。带有所述PDC切割部件的刮刀钻头有时被称为“PDC钻头”。尽管PDC非常硬且具有高耐磨性或抗磨性,但其倾向于相对易碎。衬底虽然不如PDC硬,但其比PDC更有韧性,而因此具有更高的耐冲击性。通常将衬底制造的足够长以充当安装螺柱,其一部分刚好插入钻头主体中形成的凹槽(pocket)或凹进(recess),或对于牙轮钻头插入牙轮(roller)形成的袋(packet)内。然而,在某些刮刀钻头中,所述PDC和衬底结构附接至金属安装螺柱,所述安装螺柱随后嵌入凹槽或其它凹进中。In order to improve the performance of the drill bit, one or more of the wear surfaces or working surfaces of the cutting elements are made of polycrystalline diamond (“PCD”) in the form of a polycrystalline diamond compact (“PDC”) attached to a substrate. ) layer made. One common substrate is cemented tungsten carbide. The PDC is bonded to a substrate after fabrication, and the PDC bonded substrate contains the cutter. Drag bits with such PDC cutting elements are sometimes referred to as "PDC bits". Although PDC is very hard and has high abrasion or abrasion resistance, it tends to be relatively brittle. The substrate, while not as hard as PDC, is more ductile than PDC and thus has higher impact resistance. The substrate is usually made long enough to act as a mounting stud, a portion of which just fits into a pocket or recess formed in the bit body, or for a roller cone bit into a pocket formed in the roller ( packet). However, in some drag bits, the PDC and substrate structure are attached to metal mounting studs, which are then embedded in grooves or other recesses.

聚晶金刚石复合片通过下述步骤制得:将粉末形式的聚晶金刚石与一种或多种粉末状金属催化剂和其他材料混合,将该混合物形成为复合片,并随后用高热和高压或微波加热烧结它。尽管钴或钴的合金是最常见的催化剂,但其他第VIII族金属如镍、铁及其合金也可以用作催化剂。对于切刀来说,PDC通常通过下述步骤形成:将不含有金属催化剂的聚晶金刚石颗粒(称为“金刚石磨料”)邻近胶结碳化钨衬底进行堆积,并随后将二者烧结在一起。在烧结过程中,衬底中的金属粘结剂——在钴胶结碳化钨的情况下中为钴——扫掠入或渗入所述复合片,充当催化剂以导致相邻金刚石颗粒之间的金刚石-金刚石结合物的形成。结果得到结合的金刚石晶体的团块,所述团块被描述为连续的或一体化的金刚石基质甚至“晶格”,所述金刚石之间的晶格间隙至少部分地填充有金属催化剂。Polycrystalline diamond compacts are produced by mixing polycrystalline diamond in powder form with one or more powdered metal catalysts and other materials, forming the mixture into compacts, and subsequently using high heat and pressure or microwave Heat to sinter it. Although cobalt or alloys of cobalt are the most common catalysts, other Group VIII metals such as nickel, iron and their alloys can also be used as catalysts. For cutting knives, the PDC is typically formed by stacking polycrystalline diamond grains (called "diamond grit") without metal catalysts adjacent to a cemented tungsten carbide substrate and subsequently sintering the two together. During sintering, the metallic binder in the substrate—cobalt in the case of cobalt-cemented tungsten carbide—sweeps or infiltrates the compact, acting as a catalyst to cause diamond cracking between adjacent diamond grains. - Formation of diamond compacts. The result is a clump of bonded diamond crystals, described as a continuous or unitary diamond matrix or even a "lattice", the interstices between the diamonds being at least partially filled with the metal catalyst.

支撑PDC层的衬底至少部分由胶结金属碳化物(碳化钨最为常见)制成。胶结金属碳化物衬底通过烧结粉末状金属碳化物粉末和金属合金粘结剂形成。PDC和衬底的复合材料(composite)可以以多种不同方法制造。例如,它也可以包括过渡层,其中金属碳化物和金刚石与其他成分混合以改善结合和降低PDC和衬底之间的应力。本文中提及的衬底包括这样的衬底。The substrate supporting the PDC layer is at least partially made of cemented metal carbide, most commonly tungsten carbide. A cemented metal carbide substrate is formed by sintering powdered metal carbide powder and a metal alloy binder. The composite of PDC and substrate can be fabricated in many different ways. For example, it may also include transition layers where metal carbides and diamonds are mixed with other components to improve bonding and reduce stress between the PDC and the substrate. Reference herein to a substrate includes such substrates.

由于金属催化剂的存在,PDC表现出热不稳定性。钴具有与金刚石不同的膨胀系数。其膨胀速率更大,因此在更高温度下倾向于削弱金刚石结构。此外,钴的熔点低于金刚石,其可以导致当温度达到或超过钴的熔点时,钴引起PDC内的金刚石晶体开始石墨化,也削弱所述PDC。为使PDC至少更加热稳定,将相当大的百分比——通常超过50%;经常是70%至85%;并且有可能更高——的催化剂从至少一个邻近一个或多个由于摩擦而经受最高温度的工作表面的区域中去除。催化剂通过沥滤工艺去除,所述工艺包括将PDC放置于热的强酸中,所述强酸的实例包括硝酸、氢氟酸、盐酸、或高氯酸、和它们的组合。在某些情况下,可将该酸混合物加热和/或振荡以加快该沥滤工艺。PDCs exhibit thermal instability due to the presence of metal catalysts. Cobalt has a different coefficient of expansion than diamond. Its expansion rate is greater and thus tends to weaken the diamond structure at higher temperatures. In addition, cobalt has a lower melting point than diamond, which can lead to cobalt causing the diamond crystals within the PDC to begin graphitizing when temperatures reach or exceed the melting point of cobalt, also weakening the PDC. To make the PDC at least more thermally stable, a substantial percentage—usually over 50%; frequently 70% to 85%; and possibly higher—of the catalyst is removed from at least one adjacent one or more temperature in the area of the work surface to remove. The catalyst is removed by a leaching process that involves placing the PDC in hot strong acids, examples of which include nitric acid, hydrofluoric acid, hydrochloric acid, or perchloric acid, and combinations thereof. In some cases, the acid mixture can be heated and/or shaken to speed up the leaching process.

然而,钴的去除被认为降低了PDC的韧性,因而降低了其耐冲击性。此外,沥滤PDC可导致某些胶结或粘结衬底的钴的去除,因而影响衬底和/或衬底-金刚石界面的强度或完整性。由于这些顾虑,切刀的沥滤目前是“部分的”,意思是催化剂仅从PDC的一个区域中去除,所述区域通常根据从PDC的一个或多个工作表面,包括切刀的顶部、斜切边缘或侧面测得的深度或距离限定。However, the removal of cobalt is believed to reduce the toughness of PDC and thus reduce its impact resistance. In addition, leaching of the PDC may result in the removal of some of the cobalt that cements or bonds the substrate, thereby affecting the strength or integrity of the substrate and/or the substrate-diamond interface. Because of these concerns, leaching of cutters is currently "partial," meaning that the catalyst is only removed from one area of the PDC, typically by leaching from one or more working surfaces of the PDC, including the tops of the cutters, bevels, Defined by depth or distance measured from cut edge or side.

对于在不损伤衬底或衬底和PCD之间的结合的情况下PCD可被沥滤的深度存在技术限制。该技术限制涉及保护衬底免受酸浴(其中放置切刀以进行沥滤)破坏的掩蔽物(mask)和密封物(seal)。密封物由当暴露于用于沥滤PCD的酸时倾向于随时间分解的材料制成,从而限制沥滤的持续时间并因此达到所述深度。此外,当金刚石粒径降低时,在某些情况下降低到纳米粒径(小于100纳米)时,PCD中的金刚石结构变得更加致密得多,因此沥滤至任何有用的深度(例如大于100微米的沥滤深度)变得不切实际。至少,这些更致密的结构更难以沥滤得多,需要长得多的沥滤时间。There are technical limits to the depth to which PCD can be leached without damaging the substrate or the bond between the substrate and PCD. This technical limitation involves masks and seals that protect the substrate from the acid bath in which the cutter is placed for leaching. The seal is made of a material that tends to break down over time when exposed to the acids used to leach the PCD, thereby limiting the duration of leaching and thus the depth. Furthermore, the diamond structure in PCD becomes much denser as the diamond particle size is reduced, in some cases down to nanoparticle size (less than 100 nm), and thus leached to any useful depth (e.g., greater than 100 nm). Micron leach depth) becomes impractical. At the very least, these denser structures are much more difficult to leach and require much longer leaching times.

发明内容Contents of the invention

本发明涉及用于陆地钻探钻头的改进的切割部件、制造所述切割部件的方法、以及使用所述切割部件的钻头。The present invention relates to an improved cutting element for a land drilling bit, a method of manufacturing the cutting element, and a drill bit using the cutting element.

在一个改进的切割部件的实例中,聚晶金刚石复合片(PDC)包含散布有具有六方密堆积(HCP)晶体结构的晶种材料的烧结聚晶金刚石,所述聚晶金刚石复合片附接或结合至衬底以形成用于钻头的切刀。In one example of an improved cutting component, a polycrystalline diamond compact (PDC) comprising sintered polycrystalline diamond interspersed with seed material having a hexagonal close packed (HCP) crystal structure is attached to or Bonded to a substrate to form a cutter for a drill.

在另一个改进的PDC切割部件的实例中,将烧结聚晶金刚石结构中靠近其一个或多个工作表面的一个区域(其在烧结之前已使用HCP晶种材料接种)进行沥滤以去除催化剂。具有HCP晶种材料的区域比不含有HCP晶种材料的烧结聚晶金刚石结构的区域沥滤更快,从而允许比其它由于不使用任何晶种材料制成的PCD的技术限制的可能方式更深的沥滤。快速沥滤对于包括粒径小于30微米的颗粒的聚晶金刚石进料具有特别的优势。烧结聚晶金刚石结构的选择性接种部分或区域也允许利用不同沥滤速率以形成具有不同距离或深度和几何形状的沥滤区域。In another example of an improved PDC cutting component, a region of the sintered polycrystalline diamond structure near one or more of its working surfaces that had been seeded with HCP seed material prior to sintering was leached to remove catalyst. Regions with HCP seed material leach faster than regions of sintered polycrystalline diamond structures that do not contain HCP seed material, allowing deeper than otherwise possible due to technical limitations of PCD made without using any seed material leach. Rapid leaching is of particular advantage for polycrystalline diamond feeds comprising particles less than 30 microns in size. Selective seeding of portions or regions of the sintered polycrystalline diamond structure also allows the use of different leaching rates to form leached regions with different distances or depths and geometries.

附图说明Description of drawings

图1是PDC刮刀钻头的透视图。Figure 1 is a perspective view of a PDC drag bit.

图2A、2B和2C分别是适用于图1的刮刀钻头的代表性PDC切刀的透视图、侧视图和顶视图。2A, 2B, and 2C are perspective, side, and top views, respectively, of a representative PDC cutter suitable for use with the drag bit of FIG. 1 .

图3A、3B和3C是图2A-2C的PDC切刀的四个不同实例的横截面,所述PDC切刀已在其金刚石结构内的离散区域中使用HCP材料接种,并随后被沥滤以从至少所述接种区域中部分地或全部地去除催化剂。3A, 3B, and 3C are cross-sections of four different examples of the PDC cutters of FIGS. 2A-2C that have been seeded with HCP material in discrete regions within their diamond structure and subsequently leached to The catalyst is partially or completely removed from at least the inoculation zone.

图4是图2A-2C的在金刚石层中具有遍及散布的HCP晶种材料的PDC切刀的一个实施方式的横截面。4 is a cross-section of one embodiment of the PDC cutter of FIGS. 2A-2C with HCP seed material dispersed throughout the diamond layer.

具体实施方式Detailed ways

在下列描述中,相同的数字指代相同的部件。In the following description, the same numerals refer to the same components.

图1示出了PDC刮刀钻头的一个实例100。然而,其意在作为刮刀钻头、以及一般性地用于钻油井和天然气井的钻头的一个代表性实例。所述刮刀钻头被设计为绕其中心轴102旋转。所述刮刀钻头包含连接到柄106的钻头主体104,所述柄106具有连接钻头与钻柱的锥形螺纹耦合108、和用于配合扳手来收紧与放松与钻柱的耦合的“钻头装卸器”表面111。意在总体上面向钻探方向的主体外表面称为钻头面。所述钻头面总体上位于与所述钻头的中心轴102垂直的平面上。所述主体不限于任何特定的材料。例如,它可以由钢或基质材料如金属粘结剂胶结的粉末状碳化钨制成。One example 100 of a PDC drag bit is shown in FIG. 1 . However, it is intended as a representative example of drag bit, and bits used in drilling oil and gas wells in general. The drag bit is designed to rotate about its central axis 102 . The drag bit comprises a bit body 104 connected to a shank 106 having a tapered threaded coupling 108 connecting the bit to the drill string, and a "bit handle" for engaging a wrench to tighten and loosen the coupling to the drill string. device" surface 111. The outer surface of the body which is intended to face generally in the direction of drilling is called the bit face. The bit face generally lies on a plane perpendicular to the central axis 102 of the bit. The body is not limited to any particular material. For example, it can be made of steel or a matrix material such as powdered tungsten carbide cemented with a metal binder.

多个突出的“刀片”布置在钻头面上,每个都命名为110,从所述钻头的面中突出。每个刀片总体上沿径向方向,向外延伸到切割面的周边。在该实例中,有6个刀片围绕中心轴基本上等距间隔,且在该实施方式中的每个刀片沿箭头115所示的旋转方向扫掠(sweep)或向后弯曲。A plurality of protruding "blades", each designated 110, are arranged on the face of the bit, protruding from the face of the bit. Each blade extends generally in a radial direction outwardly to the periphery of the cutting face. In this example, there are 6 blades spaced substantially equidistantly about the central axis, and each blade in this embodiment sweeps or bends back in the direction of rotation indicated by arrow 115 .

每个刀片上安装了多个离散的切割部件,或“切刀”112。每个离散的切割部件布置在凹进或凹槽内。在刮刀钻头中,切刀沿着刀片的前进(意图旋转方向)一侧放置,它们的工作表面总体上面向前进方向用来在钻头绕其中心轴旋转时剪切地层。在该实例中,切刀沿着刀片排列,以形成切割或凿击地层的结构,随后将产生的碎屑推入钻孔流体,所述流体通过喷嘴117离开钻头。钻孔流体进而将碎屑或切屑沿钻孔向上运输至表面。Mounted to each blade are a plurality of discrete cutting elements, or "cutters" 112 . Each discrete cutting member is disposed within a recess or groove. In a drag bit, the cutters are placed along the advancing (intended direction of rotation) side of the blades, with their working surfaces generally facing the advancing direction for shearing the formation as the bit rotates about its central axis. In this example, the cutters are aligned along the blades to form a structure that cuts or gouges the formation, and the resulting debris is then pushed into the drilling fluid, which exits the drill bit through nozzles 117 . The drilling fluid in turn transports debris or cuttings up the borehole to the surface.

在该刮刀钻头的实例中,所有的切刀112都是PDC切刀。然而,在其他实施方式中,不是所有的切刀都必须是PDC切刀。在该实例中的PDC切刀具有主要由超硬聚晶金刚石或类似物制成的工作表面,并由衬底支撑,所述衬底形成安装螺栓用来放置在所述刀片中形成的凹槽内。每个PDC切刀离散地制造,随后通过铜焊、压装或其他方法安装到钻头上形成的凹槽内。然而,PDC层和衬底通常以它们被制成的圆柱体形式使用。该钻头的实例包括量规衬垫(gauge pad)114。在某些应用中,钻头例如钻头100的量规衬垫可包括热稳定的、烧结聚晶金刚石(TSP)的嵌入物。In this drag bit example, all cutters 112 are PDC cutters. However, in other embodiments, not all cutters need to be PDC cutters. The PDC cutter in this example has a working surface mainly made of superhard polycrystalline diamond or similar, and is supported by a substrate forming mounting bolts for seating in grooves formed in the blade Inside. Each PDC cutter is manufactured discretely and then mounted by brazing, press-fitting or other methods into a groove formed on the drill bit. However, PDC layers and substrates are usually used in the form of cylinders in which they are made. Examples of the drill include gauge pads 114 . In certain applications, the gauge liner of a drill bit such as drill bit 100 may include an insert of thermally stable, sintered polycrystalline diamond (TSP).

图2A-2C示出了PDC切刀200的实例。所述PDC切刀包括衬底202,其附接于烧结聚晶金刚石(PCD)的层204。该层有时也被称为金刚石台座。应注意所述切刀没有按比例画出,其意在代表具有附接至衬底的聚晶金刚石结构的典型切刀,尤其是图1的钻头100上的一个或多个PDC切刀112。尽管通常是圆柱形,但PDC切刀通常不限于特定形状、大小或几何形状、或PCD的单层。在该实例中,金刚石层204的顶表面206和侧表面208之间的边缘是斜切的,以形成斜切边缘210。在该实例中,顶表面和斜切表面每个都是工作表面,用于接触并切割通过地层。侧表面的特别是靠近顶部的一部分,也可与地层或碎屑接触。钻头上不是所有的切刀都必须是相同的尺寸、构造或形状。除了以不同尺寸和形状烧结之外,PDC切刀可以被切割、研磨或铣削以改变其形状。另外,所述切刀可以具有多个离散的PCD结构。其他可能的切刀形状的实例可以是预平面化(pre-flatted)的量规切刀、尖头(pointed)或划线(scribe)切刀、凿形(chisel-shaped)切刀和拱形嵌入物(dome insert)。An example of a PDC cutter 200 is shown in FIGS. 2A-2C . The PDC cutter includes a substrate 202 attached to a layer 204 of sintered polycrystalline diamond (PCD). This layer is also sometimes referred to as the diamond pedestal. It should be noted that the cutters are not drawn to scale and are intended to represent a typical cutter having a polycrystalline diamond structure attached to a substrate, particularly the one or more PDC cutters 112 on the drill bit 100 of FIG. 1 . Although generally cylindrical, PDC cutters are generally not limited to a particular shape, size or geometry, or to a single layer of PCD. In this example, the edge between top surface 206 and side surface 208 of diamond layer 204 is chamfered to form chamfered edge 210 . In this example, the top surface and the chamfered surface are each working surfaces for contacting and cutting through the formation. A portion of the side surfaces, especially near the top, may also be in contact with formations or debris. Not all cutters on a drill have to be the same size, configuration or shape. In addition to being sintered in different sizes and shapes, PDC cutters can be cut, ground or milled to change their shape. Additionally, the cutter may have multiple discrete PCD structures. Examples of other possible cutter shapes could be pre-flatted gauge cutters, pointed or scribe cutters, chisel-shaped cutters and arched inserts thing (dome insert).

除图2A-2C之外,现在还参照图3A-3C和图4,包含金刚石层204的金刚石结构具有至少一个其中散布有晶体晶种材料颗粒的离散区域或范围。所述晶体晶种的一个实例是具有六方密堆积(HCP)结构的材料。所述HCP晶体晶种材料的实例包括具有纤锌矿晶体结构的材料,包括例如纤锌矿氮化硼(BNw)、纤锌矿碳化硅、和六方碳(六方金刚石)。Referring now to FIGS. 3A-3C and 4 in addition to FIGS. 2A-2C , the diamond structure comprising diamond layer 204 has at least one discrete region or region in which particles of crystalline seed material are interspersed. One example of the crystal seed is a material with a hexagonal close packed (HCP) structure. Examples of the HCP crystal seed material include materials having a wurtzite crystal structure, including, for example, wurtzite boron nitride (BNw), wurtzite silicon carbide, and hexagonal carbon (hexagonal diamond).

所述金刚石结构通过下述方法形成:将工业上称为金刚石磨料的合成或天然金刚石的小的或细的颗粒与HCP晶种材料颗粒(含有或不含有附加材料)按照预定的比例混合以获得所需的浓度。然后复合片或者由整个混合物形成,或者可替代地,复合片由下述方式形成:所述复合片内的混合物离散区域或体积包含所述混合物,而所述复合片的其余部分(或复合片的至少一个另外的区域)包含PCD颗粒(含有任意附加材料)但不包含HCP晶种材料。所述形成的复合片然后在催化剂如钴、钴合金、或任何第VIII族金属或合金的存在下,在高压和高温下烧结。催化剂可通过使复合片形成在用所述催化剂胶结的碳化钨衬底上、并然后烧结而渗入所述复合片。得到的是烧结的PCD结构,其具有至少一个包含HCP晶种材料的区域,所述HCP晶种材料以与所述混合物相同的比例散布遍及所述区域。The diamond structure is formed by mixing small or fine particles of synthetic or natural diamond, known in the industry as diamond abrasive, with HCP seed material particles (with or without additional materials) in predetermined proportions to obtain desired concentration. The composite sheet is then formed either from the entire mixture, or alternatively, the composite sheet is formed in such a way that a discrete region or volume of the mixture within the composite sheet contains the mixture while the rest of the composite sheet (or composite sheet At least one additional region of ) contains PCD particles (with any additional material) but does not contain HCP seed material. The formed compact is then sintered at high pressure and temperature in the presence of a catalyst such as cobalt, a cobalt alloy, or any Group VIII metal or alloy. The catalyst can be infiltrated into the compact by forming the compact on a tungsten carbide substrate cemented with the catalyst and then sintering the compact. The result is a sintered PCD structure having at least one region comprising HCP seed material dispersed throughout the region in the same proportion as the mixture.

HCP晶种材料可在一个实施方式中具有0至60微米之间的粒径、0至30微米之间的粒径,而在另一个实施方式中0至10微米之间的粒径。混合物中的PCD颗粒可在0至40微米范围内,并可小至纳米粒径。在一个实施方式中,混合物内——以及因此用HCP晶种材料接种区域内——的HCP晶种材料的比例或浓度是5体积%或更小。在另一个实施方式中,所述比例或浓度在0.05体积%至2体积%的范围内,以及在进一步的实施方式中,所述比例或浓度在0.05体积%至0.5体积%的范围内。The HCP seed material may have a particle size between 0 and 60 microns in one embodiment, between 0 and 30 microns, and in another embodiment between 0 and 10 microns. The PCD particles in the mixture can range from 0 to 40 microns and can be as small as nanometers in size. In one embodiment, the proportion or concentration of HCP seed material within the mixture - and thus within the region seeded with HCP seed material - is 5% by volume or less. In another embodiment, the ratio or concentration is in the range of 0.05% to 2% by volume, and in a further embodiment, the ratio or concentration is in the range of 0.05% to 0.5% by volume.

PCD可根据粒径在复合片内分层。例如,靠近工作层的层将包含更细颗粒(即,小于预定粒径的颗粒),而较远的层(或许是靠近衬底的基层)具有大于预定粒径的颗粒。HCP晶种材料可以只与金刚石混合磨料的更细颗粒混合以形成靠近工作表面的第一区域或层,或与金刚石混合磨料的多个层混合。PCD can be layered within the composite sheet according to particle size. For example, layers closer to the working layer will contain finer particles (ie, particles smaller than a predetermined size), while layers further away (perhaps the base layer closer to the substrate) have particles larger than the predetermined size. The HCP seed material may be mixed with only the finer particles of diamond hybrid abrasive to form a first region or layer near the working surface, or with multiple layers of diamond composite abrasive.

可替代地,在金刚石层内具有不同浓度或比例的HCP晶种材料的混合物可在所述金刚石结构中形成多个不同的区域或层,无论在PCD层的剩余结构中具有或不具有HCP晶种材料。Alternatively, mixtures of HCP seed material with different concentrations or ratios within the diamond layer can form multiple distinct regions or layers in the diamond structure, with or without HCP seed material in the remaining structure of the PCD layer. kind of material.

在另一个可替代的实例中,HCP材料用具有锌共混晶体结构的晶体晶种材料(非金刚石)取代,所述结构是一种面心立方(FCC)结构。这样的材料的实例包括立方氮化硼。In another alternative example, the HCP material is replaced with a crystalline seed material (not diamond) having a zinc blend crystal structure, which is a face centered cubic (FCC) structure. Examples of such materials include cubic boron nitride.

据信,用HCP晶体晶种材料接种的PCD,特别是上文所述的BNw,导致了具有更快沥滤时间的烧结聚晶金刚石结构。另外据信,具有根据上文描述的方法、用HCP晶种材料,并特别是用BNw作为晶种材料而形成的金刚石层的PDC切刀,与具有不用HCP晶种材料形成的金刚石结构的相同PDC切刀相比,由于提高的断裂韧性和耐磨性而性能更佳。It is believed that seeding PCD with HCP crystalline seed material, particularly BNw as described above, results in sintered polycrystalline diamond structures with faster leaching times. It is further believed that a PDC cutter having a diamond layer formed according to the method described above with HCP seed material, and in particular BNw as a seed material, is identical to having a diamond structure formed without HCP seed material Compared to PDC cutters, it performs better due to improved fracture toughness and wear resistance.

在图3A-3C所示PDC切刀200的不同实施方式中,烧结PCD金刚石层或结构204(其中散布有HCP晶种材料(“接种区域”))的区域或部分通常以点刻标注,而金刚石层部分沥滤达到的深度以虚线300标示。在每个实例中,接种区域均邻近顶表面206和斜切的周边边缘表面210,所述表面均为工作表面。In the various embodiments of the PDC cutter 200 shown in FIGS. 3A-3C , the regions or portions of the sintered PCD diamond layer or structure 204 in which the HCP seed material is interspersed (“seed regions”) are generally marked with stippling, whereas The depth to which the diamond layer is partially leached is indicated by dashed line 300 . In each example, the inoculation area is adjacent to the top surface 206 and the chamfered perimeter edge surface 210, which are both working surfaces.

在图3A的实施方式中,接种区域302横跨金刚石层204的整个顶表面,并沿其侧面的一部分向下延伸。所述接种区域从顶表面206向下延伸至从顶表面测得且小于PCD层厚度的均一深度304。如虚线300所标示,金刚石层沥滤至深度304,与未沥滤区域相比,沥滤去除了烧结后残留在金刚石层中的相当大百分比的金属催化剂。In the embodiment of FIG. 3A , the inoculated region 302 spans the entire top surface of the diamond layer 204 and extends down a portion of its sides. The inoculated region extends down from the top surface 206 to a uniform depth 304 measured from the top surface and less than the thickness of the PCD layer. As indicated by dashed line 300, the diamond layer is leached to depth 304, which removes a substantial percentage of the metal catalyst remaining in the diamond layer after sintering compared to the unleached region.

图3B实施方式中的接种区域306也如图3A的实施方式那样延伸横跨金刚石层204的整个面。所述区域沿侧表面208向下延伸距离308,所述距离308与图3A实施方式中接种区域302从顶表面起的如深度304所示的距离大约相同。然而,与图3A的实施方式不同的是,所述接种区域从顶表面延伸的深度大约为距离308,其远远小于图3A中的深度304。由于金刚石层中接种区域306的沥滤速率相对快于非接种区域,线300所标示的沥滤样式可以与接种区域界线基本上一致。The seeded region 306 in the embodiment of FIG. 3B also extends across the entire face of the diamond layer 204 as in the embodiment of FIG. 3A . The region extends down the side surface 208 a distance 308 that is approximately the same as the distance shown as depth 304 from the top surface of the inoculation region 302 in the embodiment of FIG. 3A . However, unlike the embodiment of FIG. 3A , the seeded region extends from the top surface to a depth of approximately a distance 308 , which is much less than depth 304 in FIG. 3A . Since the leaching rate in the inoculated region 306 of the diamond layer is relatively faster than in the non-inoculated region, the leaching pattern indicated by line 300 may substantially coincide with the inoculated region boundary.

图3C的实施方式具有环形形状的接种区域310,所述区域如图3C中208所示从顶表面206的周边向内延伸距离312(其小于顶表面的半径)至从顶表面206测得的深度314。该实施方式被沥滤至由虚线300标示的深度。由于接种区域310的沥滤速率更快,因此接种区域310的沥滤深度314在顶表面206的所述部分之下大于非接种区域中的沥滤深度316,如区域318所示。The embodiment of FIG. 3C has an inoculated region 310 in the shape of a ring that extends inwardly from the perimeter of top surface 206 a distance 312 (which is less than the radius of the top surface) to a distance 312, as measured from top surface 206, as shown at 208 in FIG. 3C. Depth 314. This embodiment is leached to a depth indicated by dashed line 300 . Due to the faster leaching rate of the inoculated region 310 , the leach depth 314 of the inoculated region 310 is greater below the portion of the top surface 206 than the leach depth 316 in the non-inoculated region, as shown by region 318 .

在图4的实施方式中,整个金刚石层204用HCP晶体材料接种。对于0至10微米的金刚石混合物,特别是在压制压力非常高时,得到的PCD倾向于非常致密。所增加的密度导致沥滤时间的明显增长。据信,这是由于PCD微结构具有相对较小的晶格间隙,因而抑制了沥滤酸接近第VIII族金属催化物。例如,如果PCD层包含粒径为0至10微米的金刚石磨料,在高压下压制,则沥滤深度的实际限制将是大约250微米。这是由于用于阻止酸接触衬底的密封材料的降解。如果在金刚石磨料中使用纳米颗粒,则该实际沥滤深度将在金刚石密度进一步上升时进一步减小,使得沥滤的益处变得微不足道。添加HCP晶种材料可以使得将粒径小于20微米的细粒金刚石进料PCD沥滤至远超过500微米的深度,并在某些实施方式中沥滤至超过1200微米的深度。In the embodiment of Figure 4, the entire diamond layer 204 is seeded with HCP crystalline material. For diamond mixtures of 0 to 10 microns, especially at very high compaction pressures, the resulting PCD tends to be very dense. The increased density results in a significant increase in leaching time. It is believed that this is due to the relatively small lattice spacing of the PCD microstructure, which inhibits the access of leaching acids to the Group VIII metal catalyst. For example, if the PCD layer contains diamond abrasives with a particle size of 0 to 10 microns, pressed at high pressure, the practical limit for leaching depth will be about 250 microns. This is due to degradation of the sealing material used to prevent the acid from contacting the substrate. If nanoparticles are used in the diamond abrasive, this actual leaching depth will decrease further as the diamond density rises further, rendering the benefit of leaching negligible. The addition of HCP seed material may allow leaching of fine-grained diamond feed PCD having a particle size of less than 20 microns to depths well in excess of 500 microns, and in certain embodiments to depths in excess of 1200 microns.

上文描述的是示例性的和优选的实施方式。本发明如所附权利要求限定,不限于所描述的实施方式。可在不偏离本发明的前提下对所公开的实施方式进行变更和修改。除非另行明确规定,本说明书中所用术语的含义意在具有常规的和习惯上的含义,并且不意在受限于所示出或所描述的结构或实施方式。What has been described above is an exemplary and preferred embodiment. The invention, as defined by the appended claims, is not limited to the described embodiments. Alterations and modifications may be made to the disclosed embodiments without departing from the invention. Unless expressly stated otherwise, the meanings of the terms used in this specification are intended to have conventional and customary meanings and are not intended to be limited to the structures or implementations shown or described.

Claims (29)

1. manufacture a method for the polycrystalline diamond structure being used for land drill bit, described method comprises:
HCP seed crystal material particle is mixed to form mixture with diamond compound abrasive particle;
Form composite sheet for sintering, described composite sheet contain throughout diamond compound abrasive, the mixture at least partially containing HCP seed crystal material and diamond compound abrasive of described composite sheet; With
Sinter described composite sheet in the presence of a catalyst thus form diamond lattic structure, described structure comprises the integrated agglomerate showing the polycrystalline diamond (PCD) that diamond-diamond combines, metallic catalyst occupies wherein space, and described composite sheet is scattered with described HCP seed crystal material at least in part.
2. the process of claim 1 wherein that described catalyzer comprises metal.
3. the process of claim 1 wherein that described HCP seed crystal material has wurtzite crystal structure.
4. the process of claim 1 wherein that described HCP seed crystal material is selected from the group be substantially made up of buergerite boron nitride, buergerite carborundum and lonsdaleite.
5. the process of claim 1 wherein that described HCP seed crystal material comprises buergerite boron nitride.
6. the method for any one of claim 1 to 5, the particle diameter of wherein said HCP seed crystal material is 0 to 40 micron.
7. the method for any one of claim 1 to 5, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 40 microns.
8. the method for claim 7, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 30 microns.
9. the method for claim 7, in wherein said mixture, the particle diameter of polycrystalline diamond is less than 100 nanometers at least one dimension.
10. the method for any one of claim 1 to 5, what wherein said HCP seed crystal material formed described mixture is less than 5 volume %.
The method of 11. claims 10, what wherein said HCP seed crystal material formed described mixture is less than 1 volume %.
The method of 12. claims 10, in wherein said mixture, the amount of HCP seed crystal material forms the amount between 0.05 volume % to 0.5 volume % of described mixture.
13. the process of claim 1 wherein that described composite sheet has multiple surface, and wherein at least one surface is working surface; With wherein said composite sheet, there is at least one contiguous described working surface, zone of dispersion containing described mixture, and at least one is containing the region of described mixture.
14. the process of claim 1 wherein that described mixture is arranged at least one zone of dispersion of described composite sheet, and wherein said composite sheet has at least, and another has the region of the PCD without HCP seed crystal material.
The method of 15. claims 1, wherein said mixture has HCP seed crystal material and the PCD of the first ratio, wherein said method comprises further and being mixed with the second ratio being different from described first ratio with HCP seed crystal material particle by diamond compound abrasive particle, and formed and comprise at least one and have the HCP seed crystal material of the first ratio and the mixture zone of dispersion of PCD, and at least one has the composite sheet of the HCP seed crystal material of the second ratio and the mixture zone of dispersion of PCD.
16. the process of claim 1 wherein that described composite sheet is formed by multiple surface, and one of them surface is working surface and one of them surface is basal surface; And the described composite sheet wherein formed has at least two-layer PCD: be close to described working surface, there is the first floor of the PCD particle of the first particle diameter or particle size range, with closer to described basal surface, the second layer with the PCD particle being greater than described first particle diameter or particle size range.
The method of 17. any one of claim 1 to 16, it to comprise from described diamond lattic structure leaching metals catalyzer further to desired depth.
The method of 18. any one of claim 1 to 10, wherein,
Described composite sheet has multiple surface, and one of them surface is working surface;
Described composite sheet has at least one contiguous described working surface, zone of dispersion containing described mixture, and at least one is containing the region of described mixture; With
Described method comprise further from described diamond lattic structure, from described at least one contain leaching catalyzer the zone of dispersion of described mixture.
The method of 19. any one of claim 1 to 10, wherein,
Described composite sheet has multiple surface, and one of them surface is working surface;
Described composite sheet has at least one contiguous described working surface, zone of dispersion containing described mixture, and not containing the region of described mixture; With
Described method comprise further from described diamond lattic structure, described at least one contain described mixture zone of dispersion and not containing described mixture both areas at least partially in leaching metals catalyzer.
20. drill bits comprising the main body with cut surface, described cut surface has the multiple cutting knifes be configured on it, each of described multiple cutting knife comprises the composite polycrystal-diamond be combined with substrate, and wherein said composite polycrystal-diamond obtains according to the method for any one of claim 1 to 19.
21. composite polycrystal-diamonds, it obtains according to the method for any one of claim 1 to 19.
22. for the cutting knife of drill bit, and described cutting knife has that be combined with substrate, obtained according to the method for any one of claim 1 to 19 PDC.
23. for the cutting knife of drill bit, described cutting knife comprises the substrate combined with polycrystalline diamond composite sheet (PDC), wherein said PDC comprises the integrated agglomerate showing the polycrystalline diamond that diamond-diamond combines, and described PDC is scattered with HCP seed crystal material at least in part.
The cutting knife of 24. claims 23, a part of wherein said PDC contains metallic catalyst, and a part of described PDC has the metallic catalyst of remarkable less amount.
The cutting knife of 25. claims 23, wherein said HCP seed crystal material intersperses among in PDC at least one zone of dispersion interior of contiguous described cutting knife working surface, and wherein said PDC has the region that at least one does not contain HCP seed crystal material.
The cutting knife of 26. claims 25, wherein metallic catalyst from least one zone of dispersion described in the PDC containing HCP seed crystal material at least partially removal to the desired depth relative to described working surface.
The cutting knife of 27. any one of claim 23 to 26, wherein said HCP seed crystal material has wurtzite crystal structure.
The cutting knife of 28. any one of claim 23 to 26, wherein said HCP seed crystal material is selected from the group be substantially made up of buergerite boron nitride, buergerite carborundum and lonsdaleite.
The cutting knife of 29. any one of claim 23 to 26, wherein said HCP seed crystal material comprises buergerite boron nitride.
CN201380036169.6A 2012-05-11 2013-05-09 Diamond cutting elements for drill bits seeded with HCP crystalline material Pending CN104662251A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108368727A (en) * 2015-12-14 2018-08-03 史密斯国际有限公司 The cutting element that formed by combination of materials and the drill bit for including the cutting element
CN112459724A (en) * 2020-12-31 2021-03-09 河南晶锐新材料股份有限公司 High-wear-resistance polycrystalline diamond compact
CN113039343A (en) * 2018-11-26 2021-06-25 阿特拉钻孔技术有限合伙公司 Drill bit for drilling earth and other hard materials

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022146214A1 (en) 2020-12-30 2022-07-07 Epiroc Drilling Tools Aktiebolag Rock drill insert and method for manufacturing a rock drill insert

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4334928A (en) * 1976-12-21 1982-06-15 Sumitomo Electric Industries, Ltd. Sintered compact for a machining tool and a method of producing the compact
RU2117066C1 (en) * 1996-12-09 1998-08-10 Николай Филиппович Гадзыра Silicon carbide based powder material
US20070224105A1 (en) * 2003-07-25 2007-09-27 Chien-Min Sung Superabrasive synthesis methods
WO2008079205A1 (en) * 2006-12-21 2008-07-03 Us Synthetic Corporation Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor
CN101589207A (en) * 2006-11-29 2009-11-25 贝克休斯公司 Detritus flow management features for drag bit cutters and bits so equipped
US20110061944A1 (en) * 2009-09-11 2011-03-17 Danny Eugene Scott Polycrystalline diamond composite compact
CN102099541A (en) * 2008-07-17 2011-06-15 史密斯运输股份有限公司 Method of forming polycrystalline diamond cutters

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5377811A (en) * 1976-12-21 1978-07-10 Sumitomo Electric Ind Ltd Sintered material for tools of high hardness and its preparation
US4255165A (en) * 1978-12-22 1981-03-10 General Electric Company Composite compact of interleaved polycrystalline particles and cemented carbide masses
SE457537B (en) * 1981-09-04 1989-01-09 Sumitomo Electric Industries DIAMOND PRESSURE BODY FOR A TOOL AND WAY TO MANUFACTURE IT

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4334928A (en) * 1976-12-21 1982-06-15 Sumitomo Electric Industries, Ltd. Sintered compact for a machining tool and a method of producing the compact
RU2117066C1 (en) * 1996-12-09 1998-08-10 Николай Филиппович Гадзыра Silicon carbide based powder material
US20070224105A1 (en) * 2003-07-25 2007-09-27 Chien-Min Sung Superabrasive synthesis methods
CN101589207A (en) * 2006-11-29 2009-11-25 贝克休斯公司 Detritus flow management features for drag bit cutters and bits so equipped
WO2008079205A1 (en) * 2006-12-21 2008-07-03 Us Synthetic Corporation Superabrasive compact including diamond-silicon carbide composite, methods of fabrication thereof, and applications therefor
CN102099541A (en) * 2008-07-17 2011-06-15 史密斯运输股份有限公司 Method of forming polycrystalline diamond cutters
US20110061944A1 (en) * 2009-09-11 2011-03-17 Danny Eugene Scott Polycrystalline diamond composite compact

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108368727A (en) * 2015-12-14 2018-08-03 史密斯国际有限公司 The cutting element that formed by combination of materials and the drill bit for including the cutting element
CN113039343A (en) * 2018-11-26 2021-06-25 阿特拉钻孔技术有限合伙公司 Drill bit for drilling earth and other hard materials
CN112459724A (en) * 2020-12-31 2021-03-09 河南晶锐新材料股份有限公司 High-wear-resistance polycrystalline diamond compact

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