CN104638149A - Organic light-emitting device and manufacturing method thereof - Google Patents
Organic light-emitting device and manufacturing method thereof Download PDFInfo
- Publication number
- CN104638149A CN104638149A CN201310547635.9A CN201310547635A CN104638149A CN 104638149 A CN104638149 A CN 104638149A CN 201310547635 A CN201310547635 A CN 201310547635A CN 104638149 A CN104638149 A CN 104638149A
- Authority
- CN
- China
- Prior art keywords
- layer
- electroluminescence device
- organic electroluminescence
- hole
- metal material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an organic light-emitting device, which comprises an anode, a hole injection layer, a hole transmission layer, a light-emitting layer, an electron transmission layer, an electron injection layer and a cathode stacked in sequence, wherein the cathode layer is composed of metal material, metal oxide material and hole doping object material; the work function of the metal material is -2.0eV to -3.5eV; the metal oxide material selects at least one from titanium dioxide, zinc oxide, zirconium oxide and magnesium oxide; and the hole doping object material selects at least one from 2, 3, 5, 6-tetrafluoro-7, 7, 8, 8-tetracyanoquin-odimethane, 4, 4, 4-tri(naphthyl-1-phenyl-amino) triphenylamine and di-naphthalenyl-N, N ' -di-phenyl-4, 4 ' -benzidine. The organic light-emitting device is high in light-emitting efficiency. The invention also provides an organic light-emitting device manufacturing method.
Description
Technical field
The present invention relates to a kind of organic electroluminescence device and preparation method thereof.
Background technology
Under the principle of luminosity of organic electroluminescence device is based on the effect of extra electric field, electronics is injected into organic lowest unocccupied molecular orbital (LUMO) from negative electrode, and hole is injected into organic highest occupied molecular orbital (HOMO) from anode.Meet at luminescent layer in electronics and hole, compound, formation exciton, and exciton moves under electric field action, and by energy transferring to luminescent material, and excitation electron is from ground state transition to excitation state, and excited energy, by Radiation-induced deactivation, produces photon, release luminous energy.
The negative electrode of traditional organic electroluminescence device is generally the metal such as silver (Ag), gold (Au), and after preparation, negative electrode very easily penetrates into organic layer, damage, electronics easy cancellation near negative electrode, thus luminous efficiency is lower to organic layer.
Summary of the invention
Based on this, be necessary to provide organic electroluminescence device that a kind of luminous efficiency is higher and preparation method thereof.
A kind of organic electroluminescence device, comprise the anode stacked gradually, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, described cathode layer is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, described metal oxide materials is selected from titanium dioxide, zinc oxide, at least one in zirconia and magnesium oxide, described hole doping guest materials is selected from 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and dinaphthyl-N, N '-diphenyl-4, at least one in 4 '-benzidine.
Described metal material is selected from least one in magnesium, strontium, calcium and ytterbium.
Metal material described in described cathode layer, the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
Described cathode electrode layer thickness is 100nm ~ 300nm.
Organic electroluminescence device according to claim 1, the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9, 10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium, the material of described hole injection layer is selected from molybdenum trioxide, at least one in tungstic acid and vanadic oxide, the material of described hole transmission layer is selected from 1, 1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane, 4, 4', 4''-tri-(carbazole-9-base) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
A preparation method for organic electroluminescence device, comprises the following steps:
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is formed successively at anode surface; And
Cathode layer is prepared by the method for electron beam evaporation plating on electron injecting layer surface, described cathode layer is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, described metal oxide materials is selected from titanium dioxide, zinc oxide, at least one in zirconia and magnesium oxide, described hole doping guest materials is selected from 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and dinaphthyl-N, N '-diphenyl-4, at least one in 4 '-benzidine.
Described metal material is selected from least one in magnesium, strontium, calcium and ytterbium.
Metal material described in described cathode layer, the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
Described cathode electrode layer thickness is 100nm ~ 300nm.
The concrete technology condition of described electron beam evaporation plating mode is: operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the energy density of electron beam evaporation plating is 10W/cm
2~ l00W/cm
2, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
Above-mentioned organic electroluminescence device and preparation method thereof, by the cathode construction of preparation, this cathode construction layer is by metal material, metal oxide materials and hole doping guest materials composition, metal oxide particle diameter is larger, scattering process is had to light, the transmitance of effective raising light, the HOMO energy level of hole doping guest materials is higher, can effective the passing through of blocking hole, avoid hole and electronics compound cancellation in the cathode, metal material can improve the reflection of light, the light to top-emission is made to reflect back into bottom, and a large amount of free electron can be there is, the concentration of charge carrier can be improved, thus improve the conductivity of device and improve luminous efficiency.
Accompanying drawing explanation
Fig. 1 is the structural representation of the organic electroluminescence device of an execution mode;
Fig. 2 is current density and the luminous efficiency graph of a relation of organic electroluminescence device prepared by embodiment 1.
Embodiment
Below in conjunction with the drawings and specific embodiments, organic electroluminescence device and preparation method thereof is illustrated further.
Refer to Fig. 1, the organic electroluminescence device 100 of an execution mode comprises the anode 10, hole injection layer 20, hole transmission layer 30, luminescent layer 40, electron transfer layer 50, electron injecting layer 60 and the negative electrode 70 that stack gradually.
Anode 10 is indium tin oxide glass (ITO), mixes the tin oxide glass (FTO) of fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium, is preferably ITO.
Hole injection layer 20 is formed at anode 10 surface.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably MoO
3.The thickness of hole injection layer 20 is 20nm ~ 80nm, is preferably 40nm.
Hole transmission layer 30 is formed at the surface of hole injection layer 20.The material of hole transmission layer 30 is selected from 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of hole transmission layer 30 is 20nm ~ 60nm, is preferably 30nm.
Luminescent layer 40 is formed at the surface of hole transmission layer 30.The material of luminescent layer 40 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 5nm ~ 40nm, is preferably 12nm.
Electron transfer layer 50 is formed at the surface of luminescent layer 40.The material of electron transfer layer 50 is selected from least one in 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of electron transfer layer 50 is 40nm ~ 300nm, is preferably 120nm.
Electron injecting layer 60 is formed at electron transfer layer 50 surface.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm ~ 10nm, is preferably 1nm.
Negative electrode 70 is formed at electron injecting layer 60 surface.Cathode layer 70 is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, concrete material is selected from least one in magnesium (Mg), strontium (Sr), calcium (Ca) and ytterbium (Yb), and described metal oxide materials is selected from titanium dioxide (TiO
2), at least one in zinc oxide (ZnO), zirconia (ZrO2) and magnesium oxide (MgO), described hole doping guest materials is selected from 2,3,5,6-tetra-fluoro-7,7,8,8,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) and dinaphthyl-N, at least one in N '-diphenyl-4,4 '-benzidine (2T-NATA).
Metal material described in described cathode layer, the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
Described cathode electrode layer thickness is 100nm ~ 300nm.
Above-mentioned organic electroluminescence device 100 is by the cathode construction of preparation, this cathode construction layer is by metal material, metal oxide materials and hole doping guest materials composition, metal oxide particle diameter is larger, scattering process is had to light, the transmitance of effective raising light, the HOMO energy level of hole doping guest materials is higher, can effective the passing through of blocking hole, avoid hole and electronics compound cancellation in the cathode, metal material can improve the reflection of light, the light to top-emission is made to reflect back into bottom, and a large amount of free electron can be there is, the concentration of charge carrier can be improved, thus improve the conductivity of device and improve luminous efficiency.
Be appreciated that in this organic electroluminescence device 100 and also can other functional layers be set as required.
The preparation method of the organic electroluminescence device 100 of one embodiment, it comprises the following steps:
Step S110, form hole injection layer 20, hole transmission layer 30, luminescent layer 40, electron transfer layer 50 and electron injecting layer 60 successively on anode 10 surface.
Anode 10 is indium tin oxide glass (ITO), mixes the tin oxide glass (FTO) of fluorine, mixes the zinc oxide glass (AZO) of aluminium or mixes the zinc oxide glass (IZO) of indium, is preferably ITO.
In present embodiment, before anode 10 surface forms hole injection layer 20, first antianode 10 carries out pre-treatment, pre-treatment comprises: anode 10 is carried out photoetching treatment, be cut into required size, adopt liquid detergent, deionized water, acetone, ethanol, each Ultrasonic Cleaning 15min of isopropyl acetone, to remove the organic pollution on anode 10 surface.
Hole injection layer 20 is formed at the surface of anode 10.Hole injection layer 20 is prepared by evaporation.The material of hole injection layer 20 is selected from molybdenum trioxide (MoO
3), tungstic acid (WO
3) and vanadic oxide (V
2o
5) at least one, be preferably MoO
3.The thickness of hole injection layer 20 is 20nm ~ 80nm, is preferably 40nm.Evaporation is 5 × 10 at vacuum pressure
-3~ 2 × 10
-4carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Hole transmission layer 30 is formed at the surface of hole injection layer 20.Hole-injecting Buffer Layer for Improvement 30 is prepared by evaporation.The material of hole transmission layer 30 is selected from 1,1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane (TAPC), 4,4', 4''-tri-(carbazole-9-base) triphenylamine (TCTA) and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine (NPB), is preferably NPB.The thickness of hole transmission layer 30 is 20nm ~ 60nm, is preferably 30nm.Evaporation is 5 × 10 at vacuum pressure
-3~ 2 × 10
-4carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Luminescent layer 40 is formed at the surface of hole transmission layer 30.Luminescent layer 40 is prepared by evaporation.The material of luminescent layer 40 is selected from 4-(dintrile methyl)-2-butyl-6-(1,1,7,7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans (DCJTB), 9,10-bis--β-naphthylene anthracene (ADN), 4, two (9-ethyl-3-carbazole vinyl)-1, the 1'-biphenyl (BCzVBi) of 4'-and 8-hydroxyquinoline aluminum (Alq
3) at least one, be preferably BCzVBi.The thickness of luminescent layer 40 is 0.5nm ~ 40nm, is preferably 12nm.Evaporation is 5 × 10 at vacuum pressure
-3~ 2 × 10
-4carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Electron transfer layer 50 is formed at the surface of luminescent layer 40.The material of electron transfer layer 50 is selected from least one in 4,7-diphenyl-1,10-phenanthroline (Bphen), 1,2,4-triazole derivative (as TAZ) and N-aryl benzimidazole (TPBI), is preferably TAZ.The thickness of electron transfer layer 50 is 40nm ~ 300nm, is preferably 120nm.Evaporation is 5 × 10 at vacuum pressure
-3~ 2 × 10
-4carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Electron injecting layer 60 is formed at electron transfer layer 50 surface.Electron injecting layer 60 is prepared by evaporation.The material of electron injecting layer 60 is selected from cesium carbonate (Cs
2cO
3), cesium fluoride (CsF), nitrine caesium (CsN
3) and lithium fluoride (LiF) at least one, be preferably LiF.The thickness of electron injecting layer 60 is 0.5nm ~ 10nm, is preferably 1nm.Evaporation is 5 × 10 at vacuum pressure
-3~ 2 × 10
-4carry out under Pa, evaporation rate is 0.1nm/s ~ 1nm/s.
Step S120, electron injecting layer surface prepare cathode layer 70 by the method for electron beam evaporation plating, cathode layer 70 is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, concrete material is selected from least one in magnesium (Mg), strontium (Sr), calcium (Ca) and ytterbium (Yb), and described metal oxide materials is selected from titanium dioxide (TiO
2), at least one in zinc oxide (ZnO), zirconia (ZrO2) and magnesium oxide (MgO), described hole doping guest materials is selected from 2,3,5,6-tetra-fluoro-7,7,8,8,-four cyano-benzoquinone's bismethane (F4-TCNQ), 4,4,4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine (1T-NATA) and dinaphthyl-N, at least one in N '-diphenyl-4,4 '-benzidine (2T-NATA).
Metal material described in described cathode layer, the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
Described cathode electrode layer thickness is 100nm ~ 300nm.
The concrete technology condition of described electron beam evaporation plating mode is: operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the energy density of electron beam evaporation plating is 10W/cm
2~ l00W/cm
2, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
Above-mentioned organic electroluminescence device preparation method, technique is simple, and the luminous efficiency of the organic electroluminescence device of preparation is higher.
Below in conjunction with specific embodiment, the preparation method to organic electroluminescence device provided by the invention is described in detail.
The embodiment of the present invention and the preparation used by comparative example and tester are: high vacuum coating system (scientific instrument development center, Shenyang Co., Ltd), the USB4000 fiber spectrometer testing electroluminescent spectrum of U.S. marine optics Ocean Optics, the Keithley2400 of Keithley company of the U.S. tests electric property.
Embodiment 1
Structure prepared by the present embodiment is ITO/MoO
3/ NPB/Alq
3/ Bphen/LiF/Ca:ZrO
2: the organic electroluminescence device of F4-TCNQ, "/" presentation layer in the present embodiment and following examples, ": " represents doping.
First ITO is carried out photoetching treatment, be cut into required size, use liquid detergent successively, deionized water, acetone, ethanol, each ultrasonic 15min of isopropyl alcohol, remove the organic pollution of glass surface; Clean up and carry out suitable process to conductive substrates afterwards: oxygen plasma treatment, the processing time is 5min, and power is 30W; Evaporation hole injection layer, material is MoO
3, thickness is 60nm; Evaporation hole transmission layer, material is NPB, and thickness is 50nm; Evaporation luminescent layer, material is BCzVBi, and thickness is 30nm; Evaporation electron transfer layer, material is Bphen, and thickness is 160nm; Evaporation electron injecting layer, material is LiF, and thickness is 0.7nm; Evaporation negative electrode, adopt electron beam evaporation plating mode to prepare cathode layer at described electron injecting layer surface evaporation, material is Ca:ZrO
2: F4-TCNQ, Ca, ZrO
2be 10:4:1 with the mass ratio of F4-TCNQ, thickness is 200nm.
The concrete technology condition of electron beam evaporation plating mode is: operating pressure is 8 × 10
-5pa, the energy density of electron beam evaporation plating is 30W/cm
2, the evaporation rate of organic material is 0.2nm/s, and the evaporation rate of metal and metallic compound is 3nm/s.
Refer to Fig. 2, the structure being depicted as preparation in embodiment 1 is ITO/MoO
3/ NPB/Alq
3/ Bphen/LiF/Ca:ZrO
2: structure prepared by organic electroluminescence device (curve 1) and the comparative example of F4-TCNQ is ITO/MoO
3/ NPB/Alq
3the current density of organic electroluminescence device (curve 2) of/Bphen/LiF/Ag and the relation of luminous efficiency.In organic electroluminescence device prepared by comparative example, each layer thickness is identical with each layer thickness in organic electroluminescence device prepared by embodiment 1.
Can see from Fig. 2, under different current densities, the luminous efficiency of embodiment 1 is all larger than comparative example, the maximum lumen efficiency of embodiment 1 is 7.76lm/W, and comparative example be only 5.33lm/W, and the luminous efficiency of comparative example declines fast along with the increase of current density, this explanation, patent of the present invention is by preparing cathode construction, this cathode construction layer is by metal material, metal oxide materials and hole doping guest materials composition, metal oxide particle diameter is larger, scattering process is had to light, the transmitance of effective raising light, the HOMO energy level of hole doping guest materials is higher, can effective the passing through of blocking hole, avoid hole and electronics compound cancellation in the cathode, metal material can improve the reflection of light, the light to top-emission is made to reflect back into bottom, and a large amount of free electron can be there is, the concentration of charge carrier can be improved, thus improve the conductivity of device and improve luminous efficiency.
The luminous efficiency of organic electroluminescence device prepared of each embodiment is all similar with embodiment 1 below, and each organic electroluminescence device also has similar luminous efficiency, repeats no more below.
Embodiment 2
Structure prepared by the present embodiment is AZO/MoO
3/ TCTA/ADN/Bphen/CsF/Mg:TiO
2: the organic electroluminescence device of 1T-NATA.
First AZO substrate of glass is used liquid detergent successively, deionized water, ultrasonic 15min, remove the organic pollution of glass surface; Evaporation hole injection layer: material is MoO
3, thickness is 80nm; Evaporation hole transmission layer: material is TCTA, thickness is 60nm; Evaporation luminescent layer: selected materials is ADN, thickness is 5nm; Evaporation electron transfer layer, material is Bphen, and thickness is 200nm; Evaporation electron injecting layer, material is CsF, and thickness is 10nm; Evaporation negative electrode, adopt electron beam evaporation plating mode to prepare cathode layer at described electron injecting layer surface evaporation, material is Mg:TiO
2: 1T-NATA, Mg, TiO
2be 20:5:1 with the mass ratio of 1T-NATA, thickness is 100nm.
The concrete technology condition of electron beam evaporation plating mode is: operating pressure is 2 × 10
-3pa, the energy density of electron beam evaporation plating is 10W/cm
2, the evaporation rate of organic material is 0.1nm/s, and the evaporation rate of metal and metallic compound is 10nm/s.
Embodiment 3
Structure prepared by the present embodiment is IZO/WO
3/ TAPC/Alq
3/ TAZ/Cs
2cO
3the organic electroluminescence device of/Sr:ZnO:2T-NATA.
First IZO substrate of glass is used liquid detergent successively, deionized water, ultrasonic 15min, remove the organic pollution of glass surface; Evaporation hole injection layer: material is WO
3, thickness is 20nm; Evaporation hole transmission layer: material is TAPC, thickness is 30nm; Evaporation luminescent layer: selected materials is Alq
3, thickness is 40nm; Evaporation electron transfer layer, material is TAZ, and thickness is 60nm; Evaporation electron injecting layer, material is Cs
2cO
3, thickness is 0.5nm; Evaporation negative electrode, adopt electron beam evaporation plating mode to prepare cathode layer at described electron injecting layer surface evaporation, material is the mass ratio of Sr:ZnO:2T-NATA, Sr, ZnO and 2T-NATA is 5:2:1, and thickness is 300nm.
The concrete technology condition of electron beam evaporation plating mode is: operating pressure is 5 × 10
-5pa, the energy density of electron beam evaporation plating is 100W/cm
2, the evaporation rate of organic material is 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s.
Embodiment 4
Structure prepared by the present embodiment is IZO/V
2o
5/ TCTA/DCJTB/Bphen/CsN
3the organic electroluminescence device of/Yb:MgO:1T-NATA.
First IZO substrate of glass is used liquid detergent successively, deionized water, ultrasonic 15min, remove the organic pollution of glass surface; Evaporation hole injection layer: material is V
2o
5, thickness is 30nm; Evaporation hole transmission layer: material is TCTA, thickness is 50nm; Evaporation luminescent layer: selected materials is DCJTB, thickness is 5nm; Evaporation electron transfer layer, material is Bphen, and thickness is 40nm; Evaporation electron injecting layer, material is CsN
3, thickness is 0.5nm; Evaporation negative electrode, adopt electron beam evaporation plating mode to prepare cathode layer at described electron injecting layer surface evaporation, material is the mass ratio of Yb:MgO:1T-NATA, Yb, MgO and 1T-NATA is 20::5:2, and thickness is 250nm.
The concrete technology condition of electron beam evaporation plating mode is: operating pressure is 5 × 10
-4pa, the energy density of electron beam evaporation plating is 50W/cm
2, the evaporation rate of organic material is 0.2nm/s, and the evaporation rate of metal and metallic compound is 5nm/s.
The above embodiment only have expressed several execution mode of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection range of patent of the present invention should be as the criterion with claims.
Claims (10)
1. an organic electroluminescence device, it is characterized in that, comprise the anode stacked gradually, hole injection layer, hole transmission layer, luminescent layer, electron transfer layer, electron injecting layer and negative electrode, described cathode layer is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, described metal oxide materials is selected from titanium dioxide, zinc oxide, at least one in zirconia and magnesium oxide, described hole doping guest materials is selected from 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and dinaphthyl-N, N '-diphenyl-4, at least one in 4 '-benzidine.
2. organic electroluminescence device according to claim 1, is characterized in that, described metal material is selected from least one in magnesium, strontium, calcium and ytterbium.
3. organic electroluminescence device according to claim 1, is characterized in that, metal material described in described cathode layer, and the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
4. organic electroluminescence device according to claim 1, is characterized in that, described cathode electrode layer thickness is 100nm ~ 300nm.
5. organic electroluminescence device according to claim 1, it is characterized in that, the material of described luminescent layer is selected from 4-(dintrile methyl)-2-butyl-6-(1, 1, 7, 7-tetramethyl Lip river pyridine of a specified duration-9-vinyl)-4H-pyrans, 9, 10-bis--β-naphthylene anthracene, 4, two (the 9-ethyl-3-carbazole vinyl)-1 of 4'-, at least one in 1'-biphenyl and oxine aluminium, the material of described hole injection layer is selected from molybdenum trioxide, at least one in tungstic acid and vanadic oxide, the material of described hole transmission layer is selected from 1, 1-bis-[4-[N, N '-two (p-tolyl) is amino] phenyl] cyclohexane, 4, 4', 4''-tri-(carbazole-9-base) triphenylamine and N, N '-(1-naphthyl)-N, N '-diphenyl-4, at least one in 4 '-benzidine.
6. a preparation method for organic electroluminescence device, is characterized in that, comprises the following steps:
Hole injection layer, hole transmission layer, luminescent layer, electron transfer layer and electron injecting layer is formed successively at anode surface; And
Cathode layer is prepared by the method for electron beam evaporation plating on electron injecting layer surface, described cathode layer is by metal material, metal oxide materials and hole doping guest materials composition, described metal material work function is-2.0eV ~-3.5eV, described metal oxide materials is selected from titanium dioxide, zinc oxide, at least one in zirconia and magnesium oxide, described hole doping guest materials is selected from 2, 3, 5, 6-tetra-fluoro-7, 7, 8, 8,-four cyano-benzoquinone's bismethane, 4, 4, 4-tri-(naphthyl-1-phenyl-ammonium) triphenylamine and dinaphthyl-N, N '-diphenyl-4, at least one in 4 '-benzidine.
7. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, described metal material is selected from least one in magnesium, strontium, calcium and ytterbium.
8. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, metal material described in described cathode layer, and the mass ratio of metal oxide materials and hole doping guest materials is (5 ~ 20): (2 ~ 5): 1.
9. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, described cathode electrode layer thickness is 100nm ~ 300nm.
10. the preparation method of organic electroluminescence device according to claim 6, is characterized in that, the concrete technology condition of described electron beam evaporation plating mode is: operating pressure is 2 × 10
-3~ 5 × 10
-5pa, the energy density of electron beam evaporation plating is 10W/cm
2~ l00W/cm
2, the evaporation rate of organic material is 0.1nm/s ~ 1nm/s, and the evaporation rate of metal and metallic compound is 1nm/s ~ 10nm/s.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310547635.9A CN104638149A (en) | 2013-11-06 | 2013-11-06 | Organic light-emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310547635.9A CN104638149A (en) | 2013-11-06 | 2013-11-06 | Organic light-emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104638149A true CN104638149A (en) | 2015-05-20 |
Family
ID=53216652
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310547635.9A Pending CN104638149A (en) | 2013-11-06 | 2013-11-06 | Organic light-emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104638149A (en) |
-
2013
- 2013-11-06 CN CN201310547635.9A patent/CN104638149A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104518150A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518106A (en) | Organic light-emitting device and making method thereof | |
| CN103972420A (en) | Organic light-emitting device and method for manufacturing same | |
| CN104518108A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518147A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518148A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518145A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518102A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104518146A (en) | Organic electroluminescent device and method for preparing same | |
| CN103972421A (en) | Organic light-emitting device and production method thereof | |
| CN104518109A (en) | Organic electroluminescent device and method for preparing same | |
| CN104518140A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104638149A (en) | Organic light-emitting device and manufacturing method thereof | |
| CN104124378A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103824956A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972411A (en) | Organic light-emitting device and production method thereof | |
| CN104659273A (en) | Organic electroluminescence device and preparation method thereof | |
| CN104518138A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104425745A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104078568A (en) | Organic light-emitting diode and preparation method thereof | |
| CN104638153A (en) | Organic electroluminescent device and preparation method thereof | |
| CN103972410A (en) | Organic light-emitting device and production method thereof | |
| CN104638152A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104638111A (en) | Organic electroluminescent device and preparation method thereof | |
| CN104659247A (en) | Organic electroluminescence device and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150520 |
|
| WD01 | Invention patent application deemed withdrawn after publication |