CN104637786B - A kind of method of silicon nitride coating in removal IC sheet stocks - Google Patents
A kind of method of silicon nitride coating in removal IC sheet stocks Download PDFInfo
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- CN104637786B CN104637786B CN201510043357.2A CN201510043357A CN104637786B CN 104637786 B CN104637786 B CN 104637786B CN 201510043357 A CN201510043357 A CN 201510043357A CN 104637786 B CN104637786 B CN 104637786B
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- sheet stocks
- silicon nitride
- nitride coating
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- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 32
- 238000000576 coating method Methods 0.000 title claims abstract description 31
- 239000011248 coating agent Substances 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 19
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 27
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 18
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 14
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 9
- 239000003513 alkali Substances 0.000 claims description 9
- 238000007599 discharging Methods 0.000 claims description 9
- 229910017604 nitric acid Inorganic materials 0.000 claims description 9
- 230000035484 reaction time Effects 0.000 claims description 9
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 7
- 238000005406 washing Methods 0.000 claims 2
- 238000005554 pickling Methods 0.000 abstract description 3
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The present invention relates to IC chip processing technique field, and in particular to a kind of method of silicon nitride coating in removal IC sheet stocks, comprises the following steps：Prepare corrosive liquid → cleaning, using the method for silicon nitride coating in the removal IC sheet stocks of the present invention, reaction rate is fast, the time is short, efficiency high, the disposable silicon nitride coating removed in IC sheet stocks can be achieved, it is time saving and energy saving, cleaning cost is reduced, multiple pickling is it also avoid and causes environmental pollution, once purged IC sheet stocks surface profit is bright, disclosure satisfy that large batch of cleaning requirement.
Description
Technical field
The present invention relates to IC chip processing technique field, and in particular to one kind removes silicon nitride coating in IC sheet stocks
Method.
Background technology
In the production process of IC pieces (IC chip), frequently encountering sheet stock has silicon nitride coating to need to do at removing
Reason；Existing silicon nitride etch sweep-out method, mainly there are dry and wet, the deviation of dry etching is small, and the figure of corrosion is controllable,
The dosage of chemical reagent used is also smaller, but need to buy special equipment operation, and cost is high, corrosion rate is slower, is generally used for pair
The higher etching of required precision, large batch of IC sheet stocks cleaning is not suitable for it；Wet etching uses chemical reagent completely
To be corroded, deviation is slightly larger, can receive during applied to high-volume IC sheet stock cleanings, but using the mixed of existing tradition proportioning
Acid solution, corrosion rate is still relatively slow, needs repeated multiple times pickling to remove silicon nitride coating, wastes time and energy, be equally unfavorable for dropping
Low cost, and influence of the process being cleaned multiple times to environmental protection is also larger.
The content of the invention
The method that the purpose of the present invention aims to provide silicon nitride coating in a kind of removal IC sheet stocks, there is removal efficiency height,
Cost is low, it is time saving and energy saving the advantages of.
To achieve the above object, in a kind of removal IC sheet stocks of the invention silicon nitride coating method, comprise the following steps：
Corrosive liquid → cleaning is prepared,
1) corrosive liquid is prepared：Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% phosphorus concentration
Sour 1.8-2.2, rinse bath is placed in, it is now with the current；2) clean：The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath
In the corrosive liquid that step 1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down
Road sodium hydroxide alkali cleaning process.
The method of silicon nitride coating has following excellent effect compared with prior art in a kind of removal IC sheet stocks of the present invention
Fruit.
Using the method for silicon nitride coating in the removal IC sheet stocks of the present invention, reaction rate is fast, the time is short, efficiency high, can
The disposable silicon nitride coating removed in IC sheet stocks is realized, it is time saving and energy saving, cleaning cost is reduced, multiple pickling is it also avoid and makes
Into environmental pollution, once purged IC sheet stocks surface profit is bright, disclosure satisfy that large batch of cleaning requirement.
Embodiment
The method of silicon nitride coating in a kind of removal IC sheet stocks of the present invention is described in further detail below.
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks of the present invention：Preparation corrosive liquid → clear
Wash,
1) corrosive liquid is prepared：Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% phosphorus concentration
Sour 1.8-2.2, rinse bath is placed in, it is now with the current；2) clean：The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath
In the corrosive liquid that step 1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down
Road sodium hydroxide alkali cleaning process.
Embodiment 1：
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks：
1) corrosive liquid is prepared：55% concentration hydrofluoric acid 9.5,70% concentration nitric acid 0.9,85% concentration phosphoric acid 1.8 are taken, is placed in
Rinse bath, it is now with the current；2) clean：The corruption that the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared
Lose in liquid, reaction time 1min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work
Sequence.
Embodiment 2：
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks：
1) corrosive liquid is prepared：55% concentration hydrofluoric acid 10,70% concentration nitric acid 1,85% concentration phosphoric acid 2 are taken, is placed in cleaning
Groove, it is now with the current；2) clean：The corrosive liquid that the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared
In, in reaction time 1.5min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning process.
Embodiment 3：
The method of silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks：
1) corrosive liquid is prepared：55% concentration hydrofluoric acid 10.5,70% concentration nitric acid 1.1,85% concentration phosphoric acid 2.2 are taken, is put
It is now with the current in rinse bath；2) clean：What the step 1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath was prepared
In corrosive liquid, in reaction time 2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning
Process.
Above example is only to spirit of the present invention for example, those skilled in the art can be right
Described embodiment make different modes modification supplement or using similar mode replace, but not deviate the present invention essence
Scope defined in god.
Claims (4)
1. the method for silicon nitride coating, comprises the following steps in a kind of removal IC sheet stocks：Corrosive liquid → cleaning is prepared, its feature exists
In：
(1) corrosive liquid is prepared：Take 55% concentration hydrofluoric acid 9.5-10.5,70% concentration nitric acid 0.9-1.1,85% concentration phosphoric acid
1.8-2.2 rinse bath is placed in, it is now with the current；(2) clean：The IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath
In the corrosive liquid that step (1) is prepared, in reaction time 1-2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to down
Road sodium hydroxide alkali cleaning process.
2. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that：
(1) corrosive liquid is prepared：55% concentration hydrofluoric acid 9.5,70% concentration nitric acid 0.9,85% concentration phosphoric acid 1.8 are taken, is placed in clear
Washing trough, it is now with the current；(2) clean：The corruption that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared
Lose in liquid, reaction time 1min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work
Sequence.
3. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that：
(1) corrosive liquid is prepared：55% concentration hydrofluoric acid 10,70% concentration nitric acid 1,85% concentration phosphoric acid 2 are taken, is placed in rinse bath,
It is now with the current；(2) clean：The corrosive liquid that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared
In, in reaction time 1.5min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning process.
4. the method for silicon nitride coating in removal IC sheet stocks according to claim 1, it is characterised in that：
(1) corrosive liquid is prepared：55% concentration hydrofluoric acid 10.5,70% concentration nitric acid 1.1,85% concentration phosphoric acid 2.2 are taken, is placed in clear
Washing trough, it is now with the current；(2) clean：The corruption that the step (1) that the IC sheet stocks of silicon nitride coating to be removed are placed in rinse bath is prepared
Lose in liquid, reaction time 2min, when IC sheet stocks surface is in that ash is dark-coloured, discharging is rinsed well, is transferred to lower road sodium hydroxide alkali cleaning work
Sequence.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510043357.2A CN104637786B (en) | 2015-01-21 | 2015-01-21 | A kind of method of silicon nitride coating in removal IC sheet stocks |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510043357.2A CN104637786B (en) | 2015-01-21 | 2015-01-21 | A kind of method of silicon nitride coating in removal IC sheet stocks |
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| Publication Number | Publication Date |
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| CN104637786A CN104637786A (en) | 2015-05-20 |
| CN104637786B true CN104637786B (en) | 2018-02-27 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101698473A (en) * | 2009-11-12 | 2010-04-28 | 江西赛维Ldk太阳能高科技有限公司 | Recovery method of high-purity silicon nitride |
| CN101973552A (en) * | 2010-09-21 | 2011-02-16 | 江西赛维Ldk太阳能高科技有限公司 | Method for separating silicon from impurities |
| CN102247164A (en) * | 2011-04-18 | 2011-11-23 | 华中科技大学 | Method for manufacturing high-frequency acoustic self-focusing spherical probe |
| CN102818980A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Method for testing quality of silicon substrate in solar battery |
-
2015
- 2015-01-21 CN CN201510043357.2A patent/CN104637786B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101698473A (en) * | 2009-11-12 | 2010-04-28 | 江西赛维Ldk太阳能高科技有限公司 | Recovery method of high-purity silicon nitride |
| CN101973552A (en) * | 2010-09-21 | 2011-02-16 | 江西赛维Ldk太阳能高科技有限公司 | Method for separating silicon from impurities |
| CN102247164A (en) * | 2011-04-18 | 2011-11-23 | 华中科技大学 | Method for manufacturing high-frequency acoustic self-focusing spherical probe |
| CN102818980A (en) * | 2012-08-13 | 2012-12-12 | 安阳市凤凰光伏科技有限公司 | Method for testing quality of silicon substrate in solar battery |
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| CN104637786A (en) | 2015-05-20 |
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