CN104635422A - Nanoimprinting method and device of array micro structure - Google Patents
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Abstract
本发明公开了一种阵列式微结构纳米压印方法及装置,其中,阵列式微结构纳米压印方法包括如下步骤:1)基材运行至加工工位;2)模具的压印面与基材接触;3)激光对模具压印面照射并加热;4)压印;5)脱模;6)基材运行至下一加工工位;7)重复步骤2~5。本发明的阵列式微结构纳米压印方法及装置通过激光辐射传递功率实现局部微小区域的快速加热升温与冷却;通过调节光学准直聚焦系统参数实现不同大小区域的加热效果;通过调节激光功率实现基底材料加工温度的精确控制;通过激光照射时间的调节实现基底材料的完善填充,具有加热速度快、微小加热区域精确控制、温度场梯度构建准确等优点。
The invention discloses an array type microstructure nanoimprinting method and a device, wherein the array type microstructure nanoimprinting method comprises the following steps: 1) the base material moves to a processing station; 2) the imprinting surface of the mold contacts the base material; 3) Laser irradiating and heating the embossing surface of the mold; 4) embossing; 5) demoulding; 6) moving the base material to the next processing station; 7) repeating steps 2-5. The array type microstructure nano-imprinting method and device of the present invention realize rapid heating and cooling of local micro-regions through laser radiation transmission power; realize heating effects in different sizes of regions by adjusting the parameters of the optical collimation and focusing system; realize the substrate by adjusting the laser power Precise control of material processing temperature; the perfect filling of base material can be realized by adjusting the laser irradiation time, which has the advantages of fast heating speed, precise control of small heating area, and accurate construction of temperature field gradient.
Description
本申请要求申请日为2014年9月10日、申请号为201410457892.8、发明名称为“阵列式微结构纳米压印方法及装置”的中国专利申请的优先权,其全部内容通过引用结合在本申请中。This application claims the priority of a Chinese patent application with an application date of September 10, 2014, an application number of 201410457892.8, and an invention title of "Array Microstructure Nanoimprinting Method and Device", the entire contents of which are incorporated in this application by reference .
技术领域technical field
本发明涉及阵列式光学微结构纳米压印制造领域,特别是涉及一种阵列式微结构纳米压印方法及装置。The invention relates to the field of nanoimprinting manufacturing of arrayed optical microstructures, in particular to a nanoimprinting method and device for arrayed microstructures.
背景技术Background technique
具有随机分布的阵列式全息图案的模板制造是激光防伪技术、特殊图案印刷技术中的关键,是全息激光防伪技术的关键技术环节之一,也是限制该技术批量化制造与产业化应用的瓶颈技术。行业内迫切需要一种具有低成本、快速加工性能的阵列式微结构加工方法,用以实现模板制造的产业化应用。The template manufacturing with randomly distributed arrayed holographic patterns is the key to laser anti-counterfeiting technology and special pattern printing technology. . The industry urgently needs an array microstructure processing method with low cost and fast processing performance to realize the industrial application of template manufacturing.
现有的加工方法主要包括:逐点式激光直写技术、干涉光刻技术以及电子束直写技术。现有的加工方法的基本思想是,采用基于激光或者高能粒子束的光学曝光技术,结合逐点式运动扫描装置,实现单点或者特定微小区域的扫描式曝光,从而获得光刻胶精细结构图案,再通过显影、图形转移等步骤实现整幅模板结构的加工。现有方法的主要缺点是加工效率低,而且需要对光刻胶进行精确的曝光操作,对工艺与设备的运行精度均具有很高的要求,在实际应用中受到诸多限制。The existing processing methods mainly include: point-by-point laser direct writing technology, interference lithography technology and electron beam direct writing technology. The basic idea of the existing processing method is to use the optical exposure technology based on laser or high-energy particle beam, combined with the point-by-point motion scanning device, to realize the scanning exposure of single point or specific small area, so as to obtain the fine structure pattern of photoresist , and then realize the processing of the entire template structure through steps such as development and graphic transfer. The main disadvantage of the existing method is that the processing efficiency is low, and the photoresist needs to be accurately exposed, which has high requirements on the operation accuracy of the process and equipment, and is subject to many restrictions in practical applications.
因此,针对上述问题,有必要提出进一步的解决方案。Therefore, in view of the above problems, it is necessary to propose a further solution.
发明内容Contents of the invention
有鉴于此,本发明提供了一种基于激光加热的阵列式微结构纳米压印方法及装置,以克现有的阵列式全息图案的模板加工方法中存在的不足。In view of this, the present invention provides a method and device for nano-imprinting of arrayed microstructures based on laser heating to overcome the deficiencies in the existing template processing methods for arrayed holographic patterns.
为了实现上述发明目的,本发明提供一种阵列式微结构纳米压印方法,其包括如下步骤:In order to achieve the purpose of the above invention, the present invention provides an arrayed microstructure nanoimprinting method, which includes the following steps:
1)固定待纳米压印的基材,控制该基材运行至加工工位,准备对基材的待加工区域进行加工;1) Fix the substrate to be nanoimprinted, control the substrate to run to the processing station, and prepare to process the area to be processed of the substrate;
2)控制微结构模具的压印面与所述待加工区域相接触;2) controlling the embossed surface of the microstructure mold to be in contact with the region to be processed;
3)激光对微结构模具的压印面上与所述待加工区域相对应的区域进行照射并加热,所述激光的照射区域的范围为50-1000um;3) Laser irradiating and heating the area corresponding to the area to be processed on the embossing surface of the microstructure mold, and the range of the irradiation area of the laser is 50-1000um;
4)在激光加热条件下,当微结构模具的压印面上相应区域的表面温度达到所述基材的加工温度后,控制微结构模具的压印面对所述基材的待加工区域施加压力;4) Under laser heating conditions, when the surface temperature of the corresponding area on the embossing surface of the microstructure mold reaches the processing temperature of the substrate, control the embossing surface of the microstructure mold to apply pressure to the area to be processed on the substrate ;
5)完成基材的待加工区域的压印后,停止激光照射,待基材的温度下降至脱模温度后,脱模;5) After the embossing of the area to be processed on the base material is completed, the laser irradiation is stopped, and after the temperature of the base material drops to the demoulding temperature, the mold is demoulded;
6)控制基材运行至下一加工工位,准备对基材的下一待加工区域进行加工;6) Control the base material to move to the next processing station, and prepare to process the next area to be processed of the base material;
7)重复步骤2-5至完成基材的纳米压印。7) Repeat steps 2-5 until the nanoimprinting of the substrate is completed.
作为本发明的阵列式微结构纳米压印方法的改进,所述基材为PMMA、PC以及PMMA共聚物。As an improvement of the nanoimprinting method of the arrayed microstructure of the present invention, the substrate is PMMA, PC and PMMA copolymer.
作为本发明的阵列式微结构纳米压印方法的改进,所述步骤3中,所述激光的最大辐射功率至少为5W。As an improvement of the arrayed microstructure nanoimprinting method of the present invention, in the step 3, the maximum radiation power of the laser is at least 5W.
作为本发明的阵列式微结构纳米压印方法的改进,所述步骤3中,所述激光照射加热的时间为5ms-1000ms。As an improvement of the arrayed microstructure nanoimprinting method of the present invention, in the step 3, the laser irradiation heating time is 5 ms-1000 ms.
为了实现上述发明目的,本发明提供还一种阵列式微结构纳米压印装置,其包括:基台、X-Y轴运动控制组件、Z轴运动控制组件、激光辅助加热组件;In order to achieve the purpose of the above invention, the present invention provides an arrayed microstructure nanoimprinting device, which includes: a base, an X-Y axis motion control component, a Z axis motion control component, and a laser-assisted heating component;
所述X-Y轴运动控制组件包括:运动控制平台、X轴导轨、Y轴导轨、第一电机,所述Y轴导轨相对平行设置于所述基台上,所述X轴导轨的两端滑动设置于所述Y轴导轨上,所述第一电机驱动所述运动控制平台沿所述X轴导轨和Y轴导轨进行运动;The X-Y axis motion control assembly includes: a motion control platform, an X-axis guide rail, a Y-axis guide rail, and a first motor. The Y-axis guide rail is arranged relatively parallel to the base platform, and the two ends of the X-axis guide rail are slidingly arranged On the Y-axis guide rail, the first motor drives the motion control platform to move along the X-axis guide rail and the Y-axis guide rail;
所述Z轴运动控制组件包括:支撑梁、Z轴导轨、压印头、第二电机,所述支撑梁安装于所述基台上,所述Z轴导轨设置于所述支撑梁上,所述压印头滑动设置于所述Z轴导轨上,所述第二电机驱动所述压印头沿所述Z轴导轨作升降运动,所述压印头位于所述运动控制平台上方;The Z-axis motion control assembly includes: a support beam, a Z-axis guide rail, an embossing head, and a second motor. The support beam is installed on the base, and the Z-axis guide rail is arranged on the support beam. The embossing head is slidably arranged on the Z-axis guide rail, the second motor drives the embossing head to move up and down along the Z-axis guide rail, and the embossing head is located above the motion control platform;
所述激光辅助加热组件包括:激光器、光束准直聚焦组件、固定架,所述激光辅助加热组件位于所述运动控制平台下方,所述激光器朝向所述运动控制平台设置。The laser-assisted heating assembly includes: a laser, a beam collimating and focusing assembly, and a fixing frame. The laser-assisted heating assembly is located under the motion control platform, and the laser is arranged toward the motion control platform.
作为本发明的阵列式微结构纳米压印装置的改进,所述压印头具有压印面,所述压印面上形成有若干微针结构。As an improvement of the array type microstructure nanoimprinting device of the present invention, the imprinting head has an imprinting surface on which several microneedle structures are formed.
作为本发明的阵列式微结构纳米压印装置的改进,所述基台下方还设置有隔振器。As an improvement of the arrayed microstructure nanoimprinting device of the present invention, a vibration isolator is further arranged under the base.
作为本发明的阵列式微结构纳米压印装置的改进,所述激光器为连续输出型激光器。As an improvement of the array microstructure nanoimprinting device of the present invention, the laser is a continuous output laser.
与现有技术相比,本发明的有益效果是:本发明的阵列式微结构纳米压印方法及装置通过激光辐射传递功率实现局部微小区域的快速加热升温与冷却;通过调节光束准直聚焦组件的参数实现不同大小区域的加热效果;通过调节激光功率实现基底材料加工温度的精确控制;通过激光照射时间的调节实现基底材料的完善填充,具有加热速度快、微小加热区域精确控制、温度场梯度构建准确等优点。Compared with the prior art, the beneficial effects of the present invention are: the arrayed microstructure nanoimprinting method and device of the present invention transmit power through laser radiation to realize rapid heating and cooling of local micro-regions; Parameters to achieve the heating effect of different size areas; by adjusting the laser power to achieve precise control of the processing temperature of the base material; through the adjustment of the laser irradiation time to achieve perfect filling of the base material, with fast heating speed, precise control of small heating areas, and temperature field gradient construction Accurate and other advantages.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明中记载的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments described in the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明的阵列式微结构纳米压印方法的一具体实施方式的方法流程示意图;FIG. 1 is a schematic flow diagram of a specific embodiment of the arrayed microstructure nanoimprinting method of the present invention;
图2为实施例1中加工形成的阵列式光栅结构照片;Fig. 2 is the photo of the arrayed grating structure processed and formed in embodiment 1;
图3为图2中圆圈部分的放大视图;Fig. 3 is an enlarged view of the circled part in Fig. 2;
图4为实施例2中加工形成的凹坑结构照片;Fig. 4 is the dimple structure photo that processing forms among the embodiment 2;
图5为图4中凹坑处的轮廓测试曲线;Fig. 5 is the profile test curve at the dimple place in Fig. 4;
图6为实施例3中加工形成的全息图案的照片;Fig. 6 is the photograph of the holographic pattern that processing forms in embodiment 3;
图7为图6中文字部分的放大视图;Figure 7 is an enlarged view of the text part in Figure 6;
图8为本发明的阵列式微结构纳米压印装置的一具体实施方式的立体示意图;FIG. 8 is a schematic perspective view of a specific embodiment of the arrayed microstructure nanoimprinting device of the present invention;
图9为图8中圆圈部分的侧视图。Fig. 9 is a side view of the circled part in Fig. 8 .
具体实施方式Detailed ways
下面将对本发明实施例中的技术方案进行详细的描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动的前提下所获得的所有其他实施例,都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be described in detail below, obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
本发明的阵列式微结构纳米压印方法及装置,通过激光辐射传递功率实现局部微小区域的快速加热升温与冷却;通过调节光束准直聚焦组件的参数实现不同大小区域的加热效果;通过调节激光功率实现基底材料加工温度的精确控制;通过激光照射时间的调节实现基底材料的完善填充,具有加热速度快、微小加热区域精确控制、温度场梯度构建准确等优点。The array type microstructure nanoimprinting method and device of the present invention realizes rapid heating and cooling of local micro-regions through laser radiation transmission power; realizes heating effects of different sizes of regions by adjusting the parameters of the beam collimation and focusing components; by adjusting the laser power Accurate control of the processing temperature of the base material is realized; the perfect filling of the base material is realized through the adjustment of the laser irradiation time, which has the advantages of fast heating speed, precise control of the small heating area, and accurate construction of the temperature field gradient.
具体地,如图1所示,本发明的阵列式微结构纳米压印方法包括如下步骤:Specifically, as shown in Figure 1, the method for nanoimprinting of arrayed microstructures of the present invention includes the following steps:
1)固定待纳米压印的基材,控制该基材运行至加工工位,准备对基材的待加工区域进行加工;1) Fix the substrate to be nanoimprinted, control the substrate to run to the processing station, and prepare to process the area to be processed of the substrate;
2)控制微结构模具的压印面与所述待加工区域相接触;2) controlling the embossed surface of the microstructure mold to be in contact with the region to be processed;
3)激光对微结构模具的压印面上与所述待加工区域相对应的区域进行照射并加热,所述激光的照射区域的范围为50-1000um;3) Laser irradiating and heating the area corresponding to the area to be processed on the embossing surface of the microstructure mold, and the range of the irradiation area of the laser is 50-1000um;
4)在激光加热条件下,当微结构模具的压印面上相应区域的表面温度达到所述基材的加工温度后,控制微结构模具的压印面对所述基材的待加工区域施加压力;4) Under laser heating conditions, when the surface temperature of the corresponding area on the embossing surface of the microstructure mold reaches the processing temperature of the substrate, control the embossing surface of the microstructure mold to apply pressure to the area to be processed on the substrate ;
5)完成基材的待加工区域的压印后,停止激光照射,待基材的温度下降至脱模温度后,脱模;5) After the embossing of the area to be processed on the base material is completed, the laser irradiation is stopped, and after the temperature of the base material drops to the demoulding temperature, the mold is demoulded;
6)控制基材运行至下一加工工位,准备对基材的下一待加工区域进行加工;6) Control the base material to move to the next processing station, and prepare to process the next area to be processed of the base material;
7)重复步骤2-5至完成基材的纳米压印。7) Repeat steps 2-5 until the nanoimprinting of the substrate is completed.
其中,步骤1中,所述基材为PMMA、PC以及PMMA共聚物等便于加工的热塑性高分子材料。PMMA是指聚甲基丙烯酸甲酯,PC是指聚碳酸酯。Wherein, in step 1, the base material is a thermoplastic polymer material such as PMMA, PC, and PMMA copolymer that is easy to process. PMMA refers to polymethyl methacrylate, and PC refers to polycarbonate.
步骤2中,微结构模具的压印面与所述待加工区域相接触时,并不对待加工区域施加过大的压印作用力,而是进行触碰,起到对准的作用。In step 2, when the embossing surface of the microstructure mold is in contact with the area to be processed, it does not apply excessive embossing force to the area to be processed, but touches to achieve alignment.
步骤3中,激光自下而上地照射在压印面的与所述待加工区域相对应的区域上,激光照射的区域范围为50-1000um,从而实现局部微小区域的快速加热升温与冷却。此外,通过调节激光的频率可控制压印面的表面温度。所述激光的最大辐射功率至少为5W。此外,激光光束照射时间由快门或激光器开关控制,照射时间范围优选为5ms~1000ms。In step 3, the laser is irradiated from bottom to top on the area corresponding to the area to be processed on the embossing surface, and the range of laser irradiation is 50-1000um, so as to realize rapid heating and cooling of local micro areas. In addition, the surface temperature of the embossed surface can be controlled by adjusting the frequency of the laser. The maximum radiation power of the laser is at least 5W. In addition, the irradiation time of the laser beam is controlled by a shutter or a laser switch, and the irradiation time range is preferably 5 ms-1000 ms.
步骤4中,压印面对所述基材的待加工区域施加压力时,需保持足够的作用时间,以促使基材充分填充压印面上的微结构。所述加工温度应满足高于材料玻璃化转化温度,并接近于基材的熔融温度。In step 4, when the embossing surface exerts pressure on the area to be processed of the substrate, it needs to maintain a sufficient action time to promote the substrate to fully fill the microstructure on the embossing surface. The processing temperature should be higher than the glass transition temperature of the material and close to the melting temperature of the substrate.
下面结合具体的实施例对本发明的阵列式微结构纳米压印方法进行举例说明。The array microstructure nanoimprinting method of the present invention will be illustrated below in combination with specific examples.
实施例1Example 1
以PMMA为加工基材,500nm线宽的金属镍材料光栅为针尖压头,采用针式纳米压印方法加工微结构光栅阵列模板。PMMA is used as the processing substrate, and the metal nickel material grating with a line width of 500nm is used as the needle tip indenter, and the microstructure grating array template is processed by the needle nanoimprinting method.
具体地,将加工基材固定于工作台上,控制具有上述针尖压头的微结构模具的压印面与所述待加工区域相接触;开启加热用激光,使激光束聚焦并照射于压印面表面,焦斑大小为200um,通过能量辐射使表面温度上升,表面加工温度约200℃。Specifically, the processing substrate is fixed on the workbench, and the imprinting surface of the microstructure mold having the above-mentioned needlepoint indenter is controlled to be in contact with the area to be processed; the heating laser is turned on, and the laser beam is focused and irradiated on the surface of the embossing surface , the focal spot size is 200um, the surface temperature rises through energy radiation, and the surface processing temperature is about 200°C.
当压印面表面温度达到基材的加工温度后,控制微结构模具的压印面施加压印压力,保持压力以促使基材对微结构的充分填充,保持时间50ms。完成微结构填充后关闭激光辐射,抬起微结构模具实现脱模。When the surface temperature of the embossed surface reaches the processing temperature of the substrate, the embossing pressure is applied to the imprinted surface of the microstructure mold, and the pressure is maintained to promote the substrate to fully fill the microstructure, and the holding time is 50ms. After the microstructure filling is completed, the laser radiation is turned off, and the microstructure mold is lifted to realize demoulding.
控制基材上下一个待压印区域运行至微结构模具的压印面下方,重复上述步骤,至完成整个阵列式光栅结构的加工。Control the upper and lower regions to be imprinted on the substrate to run under the imprinted surface of the microstructure mold, and repeat the above steps until the processing of the entire arrayed grating structure is completed.
如图2、3所示,为加工形成的阵列式光栅结构照片及其局部放大视图。由图可知,所加工的阵列结构排布与设计结构相符,加工结果的线宽与微结构保持一致。As shown in Figures 2 and 3, it is a photo of the arrayed grating structure formed by processing and a partially enlarged view. It can be seen from the figure that the arrangement of the processed array structure is consistent with the designed structure, and the line width of the processing result is consistent with the microstructure.
实施例2Example 2
以PC为加工基材,带有方形凸台结构的硅材料器件为针尖压头,采用针式纳米压印方法加工法布里-珀罗光学谐振腔的纳米凹坑的模板。The PC is used as the processing base material, the silicon material device with the square boss structure is used as the pinpoint indenter, and the template of the nano pit of the Fabry-Perot optical resonant cavity is processed by the pin nanoimprinting method.
具体地,将加工基材固定于工作台上,控制具有上述针尖压头的微结构模具的压印面与所述待加工区域相接触;开启加热用激光,使激光束聚焦并照射于压印面表面,焦斑大小为500um,通过能量辐射使表面温度上升,表面加工温度约250℃。Specifically, the processing substrate is fixed on the workbench, and the imprinting surface of the microstructure mold having the above-mentioned needlepoint indenter is controlled to be in contact with the area to be processed; the heating laser is turned on, and the laser beam is focused and irradiated on the surface of the embossing surface , the focal spot size is 500um, the surface temperature rises through energy radiation, and the surface processing temperature is about 250°C.
当压印面表面温度达到基材的加工温度后,控制微结构模具的压印面施加压印压力,保持压力以促使基材对微结构的充分填充,保持时间100ms。完成微结构填充后关闭激光辐射,抬起微结构模具实现脱模。When the surface temperature of the embossed surface reaches the processing temperature of the substrate, the embossing pressure is applied to the embossed surface of the microstructure mold, and the pressure is maintained to promote the substrate to fully fill the microstructure, and the holding time is 100ms. After the microstructure filling is completed, the laser radiation is turned off, and the microstructure mold is lifted to realize demoulding.
控制基材上下一个待压印区域运行至微结构模具的压印面下方,重复上述步骤,至完成整个法布里-珀罗光学谐振腔的纳米凹坑的加工。Controlling the upper and lower regions to be imprinted on the substrate to run under the imprinting surface of the microstructure mold, and repeating the above steps until the processing of the nano pits of the entire Fabry-Perot optical resonant cavity is completed.
如图4、5所示,为加工形成的凹坑结构照片及该凹坑处的轮廓测试曲线。由图可知,所加工的凹坑结构的深度为220nm,其与针尖压头上的微结构保持一致,同时加工结果的保真度良好。As shown in Figures 4 and 5, it is the photo of the pit structure formed by processing and the profile test curve at the pit. It can be seen from the figure that the depth of the processed pit structure is 220nm, which is consistent with the microstructure on the tip indenter, and the fidelity of the processing result is good.
实施例3Example 3
以PMMA-MA共聚物为加工基材,600nm线宽的金属镍材料光栅为针尖压头,采用针式纳米压印方法加工带有特定图案的全息图案模板。The PMMA-MA copolymer is used as the processing substrate, and the metal nickel material grating with a line width of 600nm is used as the needle tip indenter, and the needle nanoimprinting method is used to process the holographic pattern template with a specific pattern.
具体地,将加工基材固定于工作台上,控制具有上述针尖压头的微结构模具的压印面与所述待加工区域相接触;开启加热用激光,使激光束聚焦并照射于压印面表面,焦斑大小为100um,通过能量辐射使表面温度上升,表面加工温度约180℃。Specifically, the processing substrate is fixed on the workbench, and the imprinting surface of the microstructure mold having the above-mentioned needlepoint indenter is controlled to be in contact with the area to be processed; the heating laser is turned on, and the laser beam is focused and irradiated on the surface of the embossing surface , the focal spot size is 100um, the surface temperature rises through energy radiation, and the surface processing temperature is about 180°C.
当压印面表面温度达到基材的加工温度后,控制微结构模具的压印面施加压印压力,保持压力以促使基材对微结构的充分填充,保持时间30ms。完成微结构填充后关闭激光辐射,抬起微结构模具实现脱模。When the surface temperature of the embossed surface reaches the processing temperature of the substrate, the embossed surface of the microstructure mold is controlled to apply embossing pressure, and the pressure is maintained to promote the substrate to fully fill the microstructure, and the holding time is 30ms. After the microstructure filling is completed, the laser radiation is turned off, and the microstructure mold is lifted to realize demoulding.
控制基材上下一个待压印区域运行至微结构模具的压印面下方,重复上述步骤,至完成整个凸台阵列结构的加工。Control the upper and lower regions to be imprinted on the base material to run under the imprinted surface of the microstructure mold, and repeat the above steps until the processing of the entire boss array structure is completed.
如图6、7所示,为加工形成的全息图案的照片及其局部放大视图。由图可知,所加工的汉字图案结构整齐,光学效果良好,符合模板加工的技术要求。As shown in Figures 6 and 7, they are photos of the processed holographic patterns and their partially enlarged views. It can be seen from the figure that the processed Chinese character pattern structure is neat, the optical effect is good, and it meets the technical requirements of template processing.
如图8所示,基本相同的技术构思,本发明还提供一种阵列式微结构纳米压印装置,该阵列式微结构纳米压印装置100包括:基台10、X-Y轴运动控制组件20、Z轴运动控制组件30、激光辅助加热组件(未图示)。As shown in Figure 8, basically the same technical concept, the present invention also provides an arrayed microstructure nanoimprinting device, the arrayed microstructure nanoimprinting device 100 includes: a base 10, an X-Y axis motion control assembly 20, a Z axis Motion control component 30, laser assisted heating component (not shown).
其中,所述X-Y轴运动控制组件20用以控制基材在二维平面内的位置调节。X-Y轴运动控制组件20包括:运动控制平台21、X轴导轨22、Y轴导轨23、第一电机。所述Y轴导轨23相对平行设置于所述基台10上,从而形成两条相互平行设置的导轨。所述X轴导轨22的两端滑动设置于所述Y轴导轨23上,并与Y轴导轨23保持垂直。所述第一电机驱动所述运动控制平台21沿所述X轴导轨22和Y轴导轨23进行运动。从而,当运动控制平台沿X轴导轨滑动时,运动控制平台在X轴导轨和Y轴导轨所在平面内沿X方向运动,当运动控制平台沿Y轴导轨滑动时,运动控制平台在X轴导轨和Y轴导轨所在平面内沿Y方向运动。Wherein, the X-Y axis motion control component 20 is used to control the position adjustment of the substrate in a two-dimensional plane. The X-Y axis motion control assembly 20 includes: a motion control platform 21 , an X-axis guide rail 22 , a Y-axis guide rail 23 , and a first motor. The Y-axis guide rails 23 are arranged relatively parallel on the base 10 , thereby forming two guide rails arranged parallel to each other. Both ends of the X-axis guide rail 22 are slidably disposed on the Y-axis guide rail 23 and are kept perpendicular to the Y-axis guide rail 23 . The first motor drives the motion control platform 21 to move along the X-axis guide rail 22 and the Y-axis guide rail 23 . Therefore, when the motion control platform slides along the X-axis guide rail, the motion control platform moves along the X direction in the plane where the X-axis guide rail and the Y-axis guide rail are located. When the motion control platform slides along the Y-axis guide rail, the motion control platform moves along the X-axis guide rail. Move along the Y direction in the plane where the Y-axis guide rail is located.
Z轴运动控制组件30用以控制压印头在垂直于X轴导轨和Y轴导轨所在平面的方向上作升降运动。该Z轴运动控制组件30包括:支撑梁31、Z轴导轨32、压印头33、第二电机。所述支撑梁31安装于所述基台10上,所述Z轴导轨32设置于所述支撑31梁上。具体地,Z轴导轨32可以为安装于所述支撑梁31上的条形凸起,也可以为形成于所述支撑梁31上的滑槽。压印头33滑动设置于所述Z轴导轨32上,并位于所述运动控制平台21的上方。压印头33具有压印面,该压印面上形成有用于按压成形的微结构,具体地,该微结构可以由若干微针结构形成。所述第二电机提供所述压印头33作升降运动的动力。The Z-axis motion control assembly 30 is used to control the embossing head to move up and down in a direction perpendicular to the plane where the X-axis guide rail and the Y-axis guide rail are located. The Z-axis motion control assembly 30 includes: a support beam 31 , a Z-axis guide rail 32 , an embossing head 33 , and a second motor. The supporting beam 31 is installed on the base 10 , and the Z-axis guide rail 32 is arranged on the supporting beam 31 . Specifically, the Z-axis guide rail 32 can be a strip-shaped protrusion installed on the support beam 31 , or can be a slide groove formed on the support beam 31 . The embossing head 33 is slidably disposed on the Z-axis guide rail 32 and located above the motion control platform 21 . The embossing head 33 has an embossing surface on which a microstructure for pressing and forming is formed, specifically, the microstructure may be formed by several microneedle structures. The second motor provides power for the embossing head 33 to move up and down.
激光辅助加热组件用以提供照射并加热压印头的激光。该激光辅助加热组件包括:激光器、光束准直聚焦组件、固定架。激光器和光束准直聚焦组件固定在固定架上,激光器用于发射激光束,光束准直聚焦组件用于对激光照射区域的范围进行调节,其中,激光照射的区域范围为50-1000um。优选地,该激光器为连续输出型激光器,如此,通过该激光器可调节激光功率,实现基底材料加工温度的精确控制。The laser-assisted heating unit is used to provide laser light to irradiate and heat the embossing head. The laser-assisted heating component includes: a laser, a beam collimating and focusing component, and a fixing frame. The laser and the beam collimating and focusing assembly are fixed on the fixed frame, the laser is used to emit the laser beam, and the beam collimating and focusing assembly is used to adjust the range of the laser irradiation area, wherein the range of the laser irradiation area is 50-1000um. Preferably, the laser is a continuous output laser, so that the laser power can be adjusted through the laser to achieve precise control of the processing temperature of the substrate material.
如图9所示,此外,激光辅助加热组件位于运动控制平台21的下方,且激光器的激光束发射口朝向所述运动控制平台设置。如此,激光可自下而上地照射在压印面上。As shown in FIG. 9 , in addition, the laser-assisted heating assembly is located below the motion control platform 21 , and the laser beam emission port of the laser is set toward the motion control platform. In this way, the laser can be irradiated on the embossing surface from bottom to top.
进一步地,所述基台10下方还设置有隔振器,该隔振器起到稳定基台的作用,保证基材纳米压印的顺利进行。Further, a vibration isolator is arranged under the base 10 , and the vibration isolator plays a role of stabilizing the base to ensure the smooth progress of substrate nanoimprinting.
对于本领域技术人员而言,显然本发明不限于上述示范性实施例的细节,而且在不背离本发明的精神或基本特征的情况下,能够以其他的具体形式实现本发明。因此,无论从哪一点来看,均应将实施例看作是示范性的,而且是非限制性的,本发明的范围由所附权利要求而不是上述说明限定,因此旨在将落在权利要求的等同要件的含义和范围内的所有变化囊括在本发明内。不应将权利要求中的任何附图标记视为限制所涉及的权利要求。It will be apparent to those skilled in the art that the invention is not limited to the details of the above-described exemplary embodiments, but that the invention can be embodied in other specific forms without departing from the spirit or essential characteristics of the invention. Accordingly, the embodiments should be regarded in all points of view as exemplary and not restrictive, the scope of the invention being defined by the appended claims rather than the foregoing description, and it is therefore intended that the scope of the invention be defined by the appended claims rather than by the foregoing description. All changes within the meaning and range of equivalents of the elements are embraced in the present invention. Any reference sign in a claim should not be construed as limiting the claim concerned.
此外,应当理解,虽然本说明书按照实施方式加以描述,但并非每个实施方式仅包含一个独立的技术方案,说明书的这种叙述方式仅仅是为清楚起见,本领域技术人员应当将说明书作为一个整体,各实施例中的技术方案也可以经适当合,形成本领域技术人员可以理解的其他实施方式。In addition, it should be understood that although this specification is described according to implementation modes, not each implementation mode only contains an independent technical solution, and this description in the specification is only for clarity, and those skilled in the art should take the specification as a whole , the technical solutions in each embodiment can also be appropriately adapted to form other implementations that can be understood by those skilled in the art.
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CN109264978A (en) * | 2017-07-18 | 2019-01-25 | 香港理工大学 | Microimprinting apparatus and method for precision glass optical microstructure |
CN109384372A (en) * | 2017-08-09 | 2019-02-26 | 香港理工大学 | Optical element mould pressing method based on graphene-like electrothermal film |
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Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050067379A1 (en) * | 2003-09-25 | 2005-03-31 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
CN1643650A (en) * | 2002-03-15 | 2005-07-20 | 普林斯顿大学 | Laser assisted direct imprint lithography |
CN101131537A (en) * | 2007-09-13 | 2008-02-27 | 苏州苏大维格数码光学有限公司 | A method for precise digital micro-nano imprinting |
CN103631086A (en) * | 2012-08-21 | 2014-03-12 | 华中科技大学 | Manufacturing method for micro-nano graphs used for integrated optoelectronic device |
-
2014
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-
2015
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Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1643650A (en) * | 2002-03-15 | 2005-07-20 | 普林斯顿大学 | Laser assisted direct imprint lithography |
US20050067379A1 (en) * | 2003-09-25 | 2005-03-31 | Molecular Imprints, Inc. | Imprint lithography template having opaque alignment marks |
CN101131537A (en) * | 2007-09-13 | 2008-02-27 | 苏州苏大维格数码光学有限公司 | A method for precise digital micro-nano imprinting |
CN103631086A (en) * | 2012-08-21 | 2014-03-12 | 华中科技大学 | Manufacturing method for micro-nano graphs used for integrated optoelectronic device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109264978A (en) * | 2017-07-18 | 2019-01-25 | 香港理工大学 | Microimprinting apparatus and method for precision glass optical microstructure |
CN109384372A (en) * | 2017-08-09 | 2019-02-26 | 香港理工大学 | Optical element mould pressing method based on graphene-like electrothermal film |
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