CN104614933A - A cleaning method of a metal film forming mask - Google Patents
A cleaning method of a metal film forming mask Download PDFInfo
- Publication number
- CN104614933A CN104614933A CN201410812632.8A CN201410812632A CN104614933A CN 104614933 A CN104614933 A CN 104614933A CN 201410812632 A CN201410812632 A CN 201410812632A CN 104614933 A CN104614933 A CN 104614933A
- Authority
- CN
- China
- Prior art keywords
- mask plate
- film forming
- metal film
- cleaning method
- organic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 32
- 239000002184 metal Substances 0.000 title claims abstract description 32
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000012044 organic layer Substances 0.000 claims abstract description 24
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 15
- 238000001883 metal evaporation Methods 0.000 claims abstract description 4
- 238000001035 drying Methods 0.000 claims description 18
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 9
- 239000010410 layer Substances 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 6
- 239000005416 organic matter Substances 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 238000009834 vaporization Methods 0.000 claims description 4
- 230000008016 vaporization Effects 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000003814 drug Substances 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 3
- ZTLUNQYQSIQSFK-UHFFFAOYSA-N n-[4-(4-aminophenyl)phenyl]naphthalen-1-amine Chemical compound C1=CC(N)=CC=C1C(C=C1)=CC=C1NC1=CC=CC2=CC=CC=C12 ZTLUNQYQSIQSFK-UHFFFAOYSA-N 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- JHIVVAPYMSGYDF-PTQBSOBMSA-N cyclohexanone Chemical class O=[13C]1CCCCC1 JHIVVAPYMSGYDF-PTQBSOBMSA-N 0.000 claims description 2
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical group N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 239000007769 metal material Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001374 Invar Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A cleaning method of a metal film forming mask is disclosed. The method includes following three steps: S1) forming an organic layer on the surface of a mask by evaporation deposition; S2) putting the mask with the organic layer obtained in the step S1 into a metal film forming cavity, and performing metal evaporation deposition; and S3) putting the mask obtained in the step S2) into an organic solution and cleaning. The method can allow the metal film forming mask to be cleaned in a cleaning machine applying organic solvents, effectively prevents inconvenience in transportation processes, and saves the cost of delivering the mask to outside to be cleaned.
Description
Technical field
The present invention relates to a kind of semiconductor components and devices manufacturing technology, particularly relate to a kind of mask plate cleaning method.
Background technology
In the evaporation processing procedure of large scale OLED cathodic metal material, along with continuing of evaporation, mask plate is piled up a large amount of metal materials.For worrying accumulating amount too large and the pollution evaporation chamber that comes off, this mask plate needs periodic cleaning.Because the cleaning frequency of this mask plate is long compared with other mask plate organic cleaning frequency, special mode or the cleaning of special equipment are used in the cleaning of current metal film forming mask plate, and general enterprises is not equipped with this equipment, only has special chemical producer to have
,generally cleaned by the producer of the special clean metal material in outside.But because the transport of large-sized mask plate is cumbersome, and also need certain expense.
Summary of the invention
In order to solve above-mentioned the deficiencies in the prior art, the present invention designs a kind of new method and is used in conventional cleaning machine by metal film forming mask plate and cleans.
Technical matters to be solved by this invention is achieved by the following technical programs: described cleaning method comprises the steps:
S1: at surperficial evaporation one deck organic layer of mask plate;
S2: the mask plate obtaining step S1 to have organic layer is put into metal film forming cavity and carried out metal evaporation;
S3: the mask plate obtained by step S2 is put into organic solution and cleaned.
Further, organic layer is formed by mask plate being inserted evaporation in organic matter vaporization plating chamber in described step S1.
Further, clean by mask plate being put into the cleaning machine that organic solution is housed in described step S3.
Further, described organic layer thickness is 300 ~ 500.
Further, in described step S1, organic layer is phthalocyanine layers of copper or N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-bis-amine layer.
Further, the organic solution in described step S3 is any in 1-METHYLPYRROLIDONE, cyclohexanone series medicament.
Further, also comprise after completing steps S3 drying steps is carried out to mask plate.
Further, described drying be heat drying, pass into that gas carries out that drying, isopropyl alcohol are dry, any in the drying of hydrogen fluorine ether.
Beneficial effect of the present invention is: the cleaning process that can be simplified metal film forming mask plate by this kind of method, improves cleaning efficiency, saves the special producer of searching simultaneously and carries out cleaning the problem causing transport inconvenience, save the cost of cleaning mask plate.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the embodiment of the present invention.
Fig. 2 is the principle exploded view of the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention will be described in detail.With reference to shown in embodiment of the present invention Fig. 1, for solving the problem of large scale metal film forming mask plate cleaning, provide following method:
Mask plate 1 is put into organic matter vaporization plating chamber by the first step, and described mask plate material is invar36(invar alloy), but be not limited only to this.Before evaporation, organic matter vaporization plating chamber is pumped into high vacuum, by the vacuum evaporation of a 1 ~ 2min, evaporation one deck organic material on the whole surface of mask plate 1, forms organic layer 2.This organic layer 2 wants evaporation even, and its thickness is preferably frivolous on the uniform basis of evaporation, prevent organic layer 2 blocked up in late stage partial exfoliation, Gu preferred thickness is 300 ~ 500, but be not limited only to this.Described organic material can for any organic material required in actual production, as CuPc(CuPc) or NBP (N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamines) in a kind of, but be not limited only to this.
Second step, the mask plate 1 of evaporation one deck organic layer 2 is sent into metal film forming chamber indoor, carry out metal evaporation, such metal material is attached on the organic layer 2 of this mask plate 1, form metal material and pile up 3, the coverage of described metal accumulation 3 is less than or equal to the coverage of organic layer 2, and in metal accumulation 3, metal can be magnesium or silver, but is not limited only to this.
3rd step, after film forming, during cleaning, directly just this mask plate 1 is placed in conventional organic cleaning machine and cleans; Conventional organism cleaning liquid can be in ketone such as NMP (1-METHYLPYRROLIDONE) or HC (cyclohexanone) serial medicament any one, use after NMP (1-METHYLPYRROLIDONE) solvent and also need to use deionized water to rinse, then through KOH(potassium hydroxide) glossing.Current organism cleaning machine almost can clean the various organic materials existed on the market, as no special organic material all can use cleaning machine to clean.
As shown in Figure 2, this mask plate 1 there is materials at two layers, internal layer is organic layer 2, skin is metal accumulation 3, and in cleaning process, the organic layer 2 in this mask plate 1 dissolves with organism cleaning liquid, therefore organic layer 2 is directly peeled off from mask plate 1, in its stripping process, automatically take away upper strata metal accumulation 3, such metal material is also eliminated.Can not there is chemical reaction in this organism cleaning liquid and mask plate composition material, wash organic layer 2 and the metal accumulation 3 of mask plate 1 outside while protecting mask plate 1 off.The mode of organism and organic solvent phased soln that utilizes this kind of cleaning method can reduce the time that metal film forming mask plate is immersed in particulate metal cleaning solvent, and (metal of film forming is magnesium silver; what adopt so general is strong basicity solvent); accelerate the scavenging period of mask plate; raise the efficiency, protect the serviceable life of mask plate simultaneously.
After completing steps S3, need the mask plate 1 completing cleaning to carry out drying, its drying mode can adopt heat drying, and vacuum and heating drying can make drying effect better; Also IPA(isopropyl alcohol can be used) solvent or HFE(hydrogen fluorine ether) solvent carries out drying, and these two kinds of solvents have absorbent function, and volatility is large simultaneously, is applicable to being used as dry solvent; Can also pass into gas and carry out drying, passing into gas can be inert gas, ozone, nitrogen etc. but be not limited only to this.
Principle of work of the present invention is: before metal film forming, first evaporation one deck organic layer on mask plate, and then with mask plate evaporation metal material, formed metal accumulation, then will plating organic matter layer and on organic layer covering metal pile up mask plate put into organism cleaning machine cleaning-drying after obtain clean mask plate.
Carry out mask plate cleaning by this kind of method, do not need the producer delivering to special cleaning, make cleaning process become easy, cost saving simultaneously.
The above embodiment only have expressed embodiments of the present invention; it describes comparatively concrete and detailed; but therefore can not be interpreted as the restriction to the scope of the claims of the present invention; in every case the technical scheme adopting the form of equivalent replacement or equivalent transformation to obtain, all should drop within protection scope of the present invention.
Claims (8)
1. a cleaning method for metal film forming mask plate, is characterized in that, described cleaning method comprises the steps:
S1: at surperficial evaporation one deck organic layer of mask plate;
S2: the mask plate obtaining step S1 to have organic layer is put into metal film forming cavity and carried out metal evaporation;
S3: the mask plate obtained by step S2 is put into organic solution and cleaned.
2. the cleaning method of metal film forming mask plate according to claim 1, is characterized in that, forms organic layer in described step S1 by mask plate being inserted evaporation in organic matter vaporization plating chamber.
3. the cleaning method of metal film forming mask plate according to claim 1, is characterized in that, cleans in described step S3 by mask plate being put into the cleaning machine that organic solution is housed.
4. the cleaning method of metal film forming mask plate as claimed in claim 3, it is characterized in that, described organic layer thickness is 300 ~ 500.
5. the cleaning method of metal film forming mask plate as claimed in claim 1, is characterized in that, in described step S1, organic layer is phthalocyanine layers of copper or N, N'-diphenyl-N, N'-(1-naphthyl)-1,1'-biphenyl-4,4'-bis-amine layer.
6. the cleaning method of metal film forming mask plate as claimed in claim 1, is characterized in that, the organic solution in described step S3 is any in 1-METHYLPYRROLIDONE, cyclohexanone series medicament.
7. the cleaning method of metal film forming mask plate as claimed in claim 1, is characterized in that, also comprise and carry out drying steps to mask plate after completing steps S3.
8. the cleaning method of metal film forming mask plate as claimed in claim 7, is characterized in that, described drying is heat drying, pass into that gas carries out that drying, isopropyl alcohol are dry, any in the drying of hydrogen fluorine ether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410812632.8A CN104614933A (en) | 2014-12-24 | 2014-12-24 | A cleaning method of a metal film forming mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410812632.8A CN104614933A (en) | 2014-12-24 | 2014-12-24 | A cleaning method of a metal film forming mask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104614933A true CN104614933A (en) | 2015-05-13 |
Family
ID=53149445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410812632.8A Pending CN104614933A (en) | 2014-12-24 | 2014-12-24 | A cleaning method of a metal film forming mask |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104614933A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702319A (en) * | 2017-03-30 | 2017-05-24 | 京东方科技集团股份有限公司 | Evaporation method |
| CN107203094A (en) * | 2017-07-03 | 2017-09-26 | 京东方科技集团股份有限公司 | Mask plate cleaning plant and method |
| CN109182976A (en) * | 2018-10-23 | 2019-01-11 | 黄建宁 | A kind of deposition system and corresponding vapor deposition and mask plate cleaning method |
| CN110000150A (en) * | 2019-04-30 | 2019-07-12 | 云谷（固安）科技有限公司 | A kind of mask printing plate cleaning apparatus and cleaning method |
| CN111472013A (en) * | 2020-04-08 | 2020-07-31 | 四川富乐德科技发展有限公司 | Cleaning method for surface evaporation material of Open Mask of O L ED Mask |
| CN111534791A (en) * | 2020-04-10 | 2020-08-14 | 常州高光半导体材料有限公司 | Method for prolonging service life of mask and improving evaporation quality |
| CN111850465A (en) * | 2020-07-21 | 2020-10-30 | 福建华佳彩有限公司 | Evaporation mask structure and cleaning-free process method thereof |
| US11081530B2 (en) | 2018-04-17 | 2021-08-03 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel arrangement structure, display panel, mask component, and evaporation apparatus |
| CN114798587A (en) * | 2022-04-07 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | Method for removing foreign matters from mask plate |
| CN116240555A (en) * | 2023-02-10 | 2023-06-09 | 福建华佳彩有限公司 | OLED mask plate cleaning method and cleaning device |
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Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702319A (en) * | 2017-03-30 | 2017-05-24 | 京东方科技集团股份有限公司 | Evaporation method |
| CN107203094A (en) * | 2017-07-03 | 2017-09-26 | 京东方科技集团股份有限公司 | Mask plate cleaning plant and method |
| CN107203094B (en) * | 2017-07-03 | 2020-07-24 | 京东方科技集团股份有限公司 | Mask plate cleaning device and method |
| US11081530B2 (en) | 2018-04-17 | 2021-08-03 | Chengdu Boe Optoelectronics Technology Co., Ltd. | Pixel arrangement structure, display panel, mask component, and evaporation apparatus |
| CN109182976A (en) * | 2018-10-23 | 2019-01-11 | 黄建宁 | A kind of deposition system and corresponding vapor deposition and mask plate cleaning method |
| CN109182976B (en) * | 2018-10-23 | 2024-05-07 | 安徽微迈思科技有限公司 | Evaporation system and corresponding evaporation and mask plate cleaning method |
| CN110000150A (en) * | 2019-04-30 | 2019-07-12 | 云谷（固安）科技有限公司 | A kind of mask printing plate cleaning apparatus and cleaning method |
| CN111472013A (en) * | 2020-04-08 | 2020-07-31 | 四川富乐德科技发展有限公司 | Cleaning method for surface evaporation material of Open Mask of O L ED Mask |
| CN111534791A (en) * | 2020-04-10 | 2020-08-14 | 常州高光半导体材料有限公司 | Method for prolonging service life of mask and improving evaporation quality |
| CN111850465A (en) * | 2020-07-21 | 2020-10-30 | 福建华佳彩有限公司 | Evaporation mask structure and cleaning-free process method thereof |
| CN114798587A (en) * | 2022-04-07 | 2022-07-29 | 武汉华星光电半导体显示技术有限公司 | Method for removing foreign matters from mask plate |
| CN114798587B (en) * | 2022-04-07 | 2024-01-30 | 武汉华星光电半导体显示技术有限公司 | Mask plate foreign matter removing method |
| CN116240555A (en) * | 2023-02-10 | 2023-06-09 | 福建华佳彩有限公司 | OLED mask plate cleaning method and cleaning device |
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| C06 | Publication | ||
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Application publication date: 20150513 |