CN104599996B - The steam monitoring method of ion injection machine table - Google Patents
The steam monitoring method of ion injection machine table Download PDFInfo
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- CN104599996B CN104599996B CN201510052268.4A CN201510052268A CN104599996B CN 104599996 B CN104599996 B CN 104599996B CN 201510052268 A CN201510052268 A CN 201510052268A CN 104599996 B CN104599996 B CN 104599996B
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- 238000002347 injection Methods 0.000 title claims abstract description 57
- 239000007924 injection Substances 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims abstract description 30
- 238000012544 monitoring process Methods 0.000 title claims abstract description 30
- 239000010410 layer Substances 0.000 claims abstract description 48
- 239000012044 organic layer Substances 0.000 claims abstract description 23
- 238000005516 engineering process Methods 0.000 claims abstract description 15
- 238000005468 ion implantation Methods 0.000 claims abstract description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 7
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 7
- 229920002120 photoresistant polymer Polymers 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000005554 pickling Methods 0.000 claims description 6
- 238000002513 implantation Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 101100373011 Drosophila melanogaster wapl gene Proteins 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 210000004483 pasc Anatomy 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000739 chaotic effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Automation & Control Theory (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physical Vapour Deposition (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Present invention is disclosed a kind of steam monitoring method of ion injection machine table, there is provided a monitor wafer；An organic layer is formed in the monitor wafer；The monitor wafer is put into the ion injection machine table, ion implantation technology is carried out to the monitor wafer；Remove the organic layer；And whether the surface of the detection monitor wafer has a surface oxide layer formed in ion implantation technology, if the surface of the monitor wafer has the surface oxide layer, the thickness of the surface oxide layer is detected.The steam monitoring method of the ion injection machine table can conveniently and effectively monitoring ion inject board steam situation.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, the steam monitoring side of more particularly to a kind of ion injection machine table
Method.
Background technology
In semiconductor technology, ion implanting, such as p-type ion or N-type ion are the one kind for changing semiconducting electrical conductivity energy
Conventional meanses.Ion implanting is carried out in vacuum board, and existing experiment shows, the moisture content size of ion injection machine table, meeting
The depth of interfering ion injection, concentration etc..In some cases, even if the vacuum of board meets the requirements, but moisture content is excessive
The yield that will also result in wafer is too low.
In the prior art, the moisture content of ion injection machine table by monitoring ion inject board vacuum condition or
The residual gas in the vacuum of ion injection machine table is analyzed using residual gas analyzer.However, monitoring ion injects
The method of the vacuum condition of board can reactive ion inject the vacuum condition of board, but can not directly effective reactive ion injection
The water-air regime of board；The method cost analyzed using residual gas analyzer the residual gas in vacuum is high, uses
Condition is harsh, largely effects on production cost.
The content of the invention
It is an object of the present invention to provide a kind of steam monitoring method of ion injection machine table, conveniently and effectively monitor from
The steam situation of son injection board.
In order to solve the above technical problems, the present invention provides a kind of steam monitoring method of ion injection machine table, including：
One monitor wafer is provided；
An organic layer is formed in the monitor wafer；
The monitor wafer is put into the ion injection machine table, ion implantation technology is carried out to the monitor wafer；
Remove the organic layer；And
Whether have the surface oxide layer that in ion implantation technology is formed, if institute if detecting the surface of the monitor wafer
There is the surface oxide layer in the surface for stating monitor wafer, detect the thickness of the surface oxide layer.
Further, the organic layer is photoresist layer.
Further, the thickness of the photoresist layer is
Further, the atomic weight of the ion elements in the ion implantation technology is more than or equal to 40.
Further, the ion elements are arsenic element, phosphide element or Ge element.
Further, the Implantation Energy of the arsenic element is 40Kev~60Kev, and implantation dosage is 515/cm2~615/cm2,
Injection Current is the μ A of 15000 μ A~17500.
Further, the monitor wafer is blank wafer.
Further, the step of removing the organic layer includes：
Cineration technics is carried out to the monitor wafer；
Pickling is carried out to the monitor wafer.
Further, the temperature of the cineration technics is 200 DEG C~300 DEG C, time of the cineration technics for 30min~
60min。
Further, pickling is carried out to the monitor wafer using sulfuric acid.
Compared with prior art, the steam monitoring method for the ion injection machine table that the present invention is provided has advantages below：
In the steam monitoring method for the ion injection machine table that the present invention is provided, one is formed in the monitor wafer organic
Layer, is then put into the ion injection machine table by the monitor wafer, and ion implantation technology, ion are carried out to the monitor wafer
Energy can be produced by striking the surface of the monitor wafer, if there is steam in the ion injection machine table, the energy can make
The oxygen element obtained in steam is gathered in the surface of the monitor wafer, and forms surface oxide layer, detects the monitor wafer
Whether surface has the surface oxide layer, it can be determined that whether there is steam in the ion injection machine table, it is possible to pass through institute
The thickness of surface oxide layer is stated, the number of steam judged.
Brief description of the drawings
Fig. 1 is the flow chart for the steam monitoring method that one embodiment of the invention intermediate ion injects board；
Fig. 2 to Fig. 5 be one embodiment of the invention intermediate ion inject board steam monitoring method during monitor wafer
The schematic diagram of surface change.
Embodiment
Steam present in ion injection machine table of the prior art is not easy simply and effectively to detect, inventor couple
Prior art research finds that, when the chip in the ion injection machine table carries out ion implanting, hydrone can be with injection
The oxygen element that is gathered in the surface of chip, hydrone of ion can form surface oxide layer with the pasc reaction in chip.So
And, if between blank wafer is put into the ion injection machine table as monitor wafer, the surface oxide layer be difficult retain
On the surface of the blank wafer, so that the surface oxide layer can not be detected.
Inventor further study show that, if the blank wafer surface formed an organic layer, when to the ion
When injecting in board the chip progress ion implanting with organic layer, hydrone can be gathered in the table of chip with the ion of injection
Oxygen element in face, hydrone can form surface oxide layer with the pasc reaction in chip, and the surface oxide layer can be retained in
The surface of chip.
Based on the studies above, inventor proposes a kind of steam monitoring method of ion injection machine table, including：
There is provided a monitor wafer by step S11；
Step S12, forms an organic layer in the monitor wafer；
Step S13, the ion injection machine table is put into by the monitor wafer, and ion implanting is carried out to the monitor wafer
Technique；
Step S14, removes the organic layer；And
Whether step S15, detecting the surface of the monitor wafer has a surface oxidation formed in ion implantation technology
Layer, if the surface of the monitor wafer has the surface oxide layer, detects the thickness of the surface oxide layer.
In step s 13, ionic bombardment can produce energy to the surface of the monitor wafer, if the ion implantation apparatus
There is steam in platform, the energy can make it that the oxygen element in steam is gathered in the surface of the monitor wafer, and form Surface Oxygen
Change layer, whether have the surface oxide layer, it can be determined that be in the ion injection machine table if detecting the surface of the monitor wafer
It is no to there is steam, it is possible to by the thickness of the surface oxide layer, the number of steam judged.
The steam monitoring method of the ion injection machine table of the present invention is described in more detail below in conjunction with schematic diagram,
Which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change invention described herein,
And still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for the extensive of those skilled in the art
Know, and be not intended as limitation of the present invention.
For clarity, not describing whole features of practical embodiments.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to make a large amount of implementation details to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
The present invention is more specifically described by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that, accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
The steam monitoring method for the ion injection machine table that refer to Fig. 1-Fig. 5 below to illustrate the present embodiment, wherein,
Fig. 1 is the flow chart for the steam monitoring method that one embodiment of the invention intermediate ion injects board；Fig. 2 to Fig. 5 is real for the present invention one
Apply the schematic diagram that monitor wafer surface during the steam monitoring method of intermediate ion injection board changes.
As shown in figure 1, step S11 is carried out first, as shown in Figure 2 there is provided a monitor wafer 100, preferably, the monitoring
Chip 100 is blank wafer (bare silicon wafer), can reduce error, still, the monitor wafer 100 is not limited
In for blank wafer, the monitor wafer 100 can also have the chip of silicon nitride layer for deposition, as long as will not be produced to testing result
Raw influence, also within the thought range of the present invention.
Then step S12 is carried out, as shown in figure 3, an organic layer 110 is formed in the monitor wafer 100, preferably,
The organic layer 110 is photoresist layer, and in step s 13, the photoresist layer is conducive to retaining the surface oxide layer in the prison
Control the surface of chip 100.Wherein, the thickness of the photoresist layer isFor exampleDeng.
The organic layer 110 is not limited to as photoresist layer, and the material of also described organic layer 110 can also be polyimides etc., also have
Beneficial to the reservation surface oxide layer in the surface of the monitor wafer 100.
Then step S13 is carried out, with reference to Fig. 4, Fig. 4 has reacted in ion implantation process microenvironment in reaction chamber.Such as Fig. 4
It is shown, the monitor wafer 100 is put into the reaction chamber 200 of the ion injection machine table, the monitor wafer 100 is carried out from
Sub- injection technology, wherein, direction of the organic layer 110 just to ion implanting.The ion 201 being injected into is along the solid line in Fig. 4
The direction of arrow is propagated, and gets to the surface of the organic layer 110.The pressure of the propagation regions a-quadrant of the ion 201 is small, institute
The pressure for stating the non-propagating region B regions (being located at around the a-quadrant) of ion 201 is big, if the ion injection machine table
There is steam 202, the steam 202 dotted arrow direction along along Fig. 4 gathers a-quadrant, so that described in reaction chamber 200
Moisture convergence in reaction chamber 200 is in a-quadrant.Steam 202 in a-quadrant is further by the displacement shape of ion 201
Into ion beam be deposited in the surface of the monitor wafer 100.When the ion 201 injects 100 surface of monitor wafer
Shock can produce energy, and the energy can cause the oxygen element in steam 202 to be gathered in the surface of the monitor wafer 100, and shape
(do not drawn in Fig. 4) into surface oxide layer.In step s 13, the organic layer 110 may be breakdown, so that described
The surface of monitor wafer 100 forms the surface oxide layer.
Preferably, the atomic weight of the element of the ion 201 is more than or equal to 40, such as the element of described ion 201 is arsenic
Element, phosphide element or Ge element etc..In the present embodiment, the element of the ion 201 is arsenic element, the note of the arsenic element
Enter energy for 40Kev~60Kev, implantation dosage is 515/cm2~615/cm2, Injection Current is the μ A of 15000 μ A~17500.
Step S14 is then carried out, the organic layer 110 is removed, so that the surface oxide layer 120 can expose
Carry out surface oxide layer 120, as shown in Figure 5.Specifically, step S14 includes following sub-step：
Sub-step S141：Cineration technics is carried out to the monitor wafer 100, preferably, the temperature of the cineration technics is
200 DEG C~300 DEG C, the time of the cineration technics is 30min~60min.
Sub-step S142：Pickling is carried out to the monitor wafer 100, preferably, using sulfuric acid to the monitor wafer 100
Carry out pickling.
Step S15 is finally carried out, whether detect the surface of the monitor wafer 100 has a formation in ion implantation technology
Surface oxide layer 120, if there is steam in the reaction chamber 200 of the ion injection machine table, the monitor wafer 100
There is the surface oxide layer 120 in surface, also, the thickness of the surface oxide layer 120 and the ion injection machine table is anti-
How much proportional relations of steam in chamber 200 are answered, therefore, it can detect whether the surface of the monitor wafer 100 has the table
Face oxide layer 120, it can be determined that whether there is steam in the ion injection machine table, it is possible to pass through the surface oxide layer
120 thickness, judges the number of steam.
In the particular embodiment, the monitor wafer 100 can be put into film thickness measuring board, table described in direct measurement
The thickness of face oxide layer 120, if the thickness of the surface oxide layer 120 is 0, illustrates the reaction of the ion injection machine table
Steam is not present in chamber 200：If the thickness of the surface oxide layer 120 is smaller, in a preset range (such as)
Within, then illustrate that the steam in the reaction chamber 200 of the ion injection machine table is few, the ion injection machine table can normally make
With；If the thickness ratio of the surface oxide layer 120 is larger, more than the preset range (such as), such as described table
The thickness of face oxide layer 120 isThen illustrate that the steam in the reaction chamber 200 of the ion injection machine table is more, it is necessary to right
The ion injection machine table carries out the processing except steam.
Obviously, those skilled in the art can carry out the essence of various changes and modification without departing from the present invention to the present invention
God and scope.So, if these modifications and variations of the present invention belong to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these changes and modification.
Claims (10)
1. a kind of steam monitoring method of ion injection machine table, it is characterised in that including：
One monitor wafer is provided；
An organic layer is formed in the monitor wafer；
The monitor wafer is put into the ion injection machine table, ion implantation technology is carried out to the monitor wafer；
Remove the organic layer；And
Whether have the surface oxide layer that in ion implantation technology is formed, if the prison if detecting the surface of the monitor wafer
There is the surface oxide layer in the surface of control chip, detect the thickness of the surface oxide layer.
2. the steam monitoring method of ion injection machine table as claimed in claim 1, it is characterised in that the organic layer is photoresistance
Layer.
3. the steam monitoring method of ion injection machine table as claimed in claim 2, it is characterised in that the thickness of the photoresist layer
For
4. the steam monitoring method of ion injection machine table as claimed in claim 1, it is characterised in that the ion implantation technology
In ion elements atomic weight be more than or equal to 40.
5. the steam monitoring method of ion injection machine table as claimed in claim 4, it is characterised in that the ion elements are arsenic
Element, phosphide element or Ge element.
6. the steam monitoring method of ion injection machine table as claimed in claim 5, it is characterised in that the injection of the arsenic element
Energy is 40Kev~60Kev, and implantation dosage is 515/cm2~615/cm2, Injection Current is the μ A of 15000 μ A~17500.
7. the steam monitoring method of ion injection machine table as claimed in claim 1, it is characterised in that the monitor wafer is sky
White chip.
8. the steam monitoring method of the ion injection machine table as any one of claim 1 to 7, it is characterised in that remove
The step of organic layer, includes：
Cineration technics is carried out to the monitor wafer；
Pickling is carried out to the monitor wafer.
9. the steam monitoring method of ion injection machine table as claimed in claim 8, it is characterised in that the temperature of the cineration technics
Spend for 200 DEG C~300 DEG C, the time of the cineration technics is 30min~60min.
10. the steam monitoring method of ion injection machine table as claimed in claim 8, it is characterised in that using sulfuric acid to described
Monitor wafer carries out pickling.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510052268.4A CN104599996B (en) | 2015-01-31 | 2015-01-31 | The steam monitoring method of ion injection machine table |
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| CN201510052268.4A CN104599996B (en) | 2015-01-31 | 2015-01-31 | The steam monitoring method of ion injection machine table |
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| CN104599996B true CN104599996B (en) | 2017-08-25 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| EP3196919B1 (en) * | 2016-10-20 | 2018-09-19 | FEI Company | Cryogenic specimen processing in a charged particle microscope |
| CN107239632B (en) * | 2017-06-20 | 2020-12-25 | 上海华力微电子有限公司 | Model for simulating penetration depth of ion implantation photoresist and modeling method thereof |
| CN110504195B (en) * | 2019-08-22 | 2022-03-18 | 上海华力集成电路制造有限公司 | Water vapor monitoring method for reaction cavity |
| CN113984788B (en) * | 2021-12-24 | 2022-03-15 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1632920A (en) * | 2003-12-24 | 2005-06-29 | 茂德科技股份有限公司 | Method for Precisely Controlling Ion Implantation Concentration and Method for Simultaneously Controlling Pressure Compensation Factor |
| CN101310360A (en) * | 2005-11-14 | 2008-11-19 | 艾克塞利斯技术公司 | Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases |
| CN103092009A (en) * | 2011-11-08 | 2013-05-08 | 无锡华润华晶微电子有限公司 | Removing method of photoresist used as masking layer of plasma injection |
| CN104091767A (en) * | 2014-06-25 | 2014-10-08 | 京东方科技集团股份有限公司 | Ion implantation monitoring method |
| CN104157591A (en) * | 2014-08-27 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Method for detecting water vapor in ion injection machine table |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6777173B2 (en) * | 2002-08-30 | 2004-08-17 | Lam Research Corporation | H2O vapor as a processing gas for crust, resist, and residue removal for post ion implant resist strip |
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- 2015-01-31 CN CN201510052268.4A patent/CN104599996B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1632920A (en) * | 2003-12-24 | 2005-06-29 | 茂德科技股份有限公司 | Method for Precisely Controlling Ion Implantation Concentration and Method for Simultaneously Controlling Pressure Compensation Factor |
| CN101310360A (en) * | 2005-11-14 | 2008-11-19 | 艾克塞利斯技术公司 | Systems and methods that mitigate contamination and modify surface characteristics during ion implantation processes through the introduction of gases |
| CN103092009A (en) * | 2011-11-08 | 2013-05-08 | 无锡华润华晶微电子有限公司 | Removing method of photoresist used as masking layer of plasma injection |
| CN104091767A (en) * | 2014-06-25 | 2014-10-08 | 京东方科技集团股份有限公司 | Ion implantation monitoring method |
| CN104157591A (en) * | 2014-08-27 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Method for detecting water vapor in ion injection machine table |
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