CN104596659A - Temperature sensing circuit of display, display and operation method thereof - Google Patents

Abstract

A temperature sensing circuit applied to a display, the display and an operation method thereof are provided, wherein the sensing circuit comprises a temperature sensing module, a reading module and a resetting module; the temperature sensing module is used for providing a sensing voltage potential according to the sensed temperature, the reading module is used for receiving the sensing voltage potential and determining whether to output the sensing voltage potential according to the first control signal, and the resetting module is used for receiving the second control signal and determining whether to reset the sensing voltage potential to a low voltage potential according to the second control signal.

Description

Temperature sensing circuit for display, display and method of operation thereof

technical field

The present invention relates to a temperature sensing circuit, in particular to a temperature sensing circuit applied to a display and an operation method thereof.

Background technique

The known liquid crystal display device will be affected by temperature changes, which will cause the gate drive circuit disposed on the substrate of the liquid crystal display device to have an excessive leakage current or a low driving current, which will lead to abnormal display screens. Therefore, the liquid crystal display device needs The temperature detection element adjusts the operating voltage of the gate drive circuit by grasping the current temperature at any time, so that the liquid crystal display device can display images normally without being affected by temperature changes. Therefore, how the temperature detection element can accurately detect the current temperature of the substrate is a subject.

Contents of the invention

In order to solve the above problems, the present invention provides a temperature sensing circuit, comprising:

A temperature sensing module, which has a first end and a second end, the first end of the temperature sensing module is used to receive a high voltage potential, and the temperature sensing module is used to provide a sensing function according to the sensed temperature The voltage potential is connected to the second end, and the temperature sensing module is a plurality of series-connected diodes or a plurality of series-connected transistors, and the gate terminal of each transistor is electrically coupled to the drain terminal of each transistor;

a reading module, electrically coupled with the temperature sensing module, for receiving the sensing voltage level, and determining whether to output the sensing voltage level according to a first control signal; and

A reset module, electrically coupled with the temperature sensing module, is used to receive a second control signal, and decide whether to reset the sensing voltage level to a low voltage level according to the second control signal.

The above temperature sensing circuit, the temperature sensing circuit further includes:

A driving module, electrically coupled with the reset module, for receiving the first control signal and outputting the second control signal to the reset module, the driving module is an inverter, and the first control signal Inverted with the second control signal.

The above temperature sensing circuit, the temperature sensing circuit further includes:

A capacitor has a first end and a second end, the first end of the capacitor is electrically coupled to the reading module, and the second end of the capacitor is electrically coupled to the low voltage potential.

In the above temperature sensing circuit, the reset module is a first transistor with a first terminal, a second terminal and a gate terminal, the first terminal of the first transistor is connected to the second terminal of the temperature sensing module The terminal is electrically coupled, the gate terminal of the first transistor is used for receiving the second control signal, and the second terminal of the first transistor is used for electrically coupling with the low voltage potential.

In the above-mentioned temperature sensing circuit, the reading module is a second transistor having a first terminal, a second terminal and a gate terminal, the first terminal of the second transistor is used to receive the sensing voltage potential, The gate terminal of the second transistor is used for receiving the first control signal, and the second terminal of the second transistor is used for electrically coupling with the first terminal of the capacitor.

In order to solve the above problems, the present invention also provides a display, comprising:

a substrate with a plurality of pixels disposed thereon;

The temperature sensing circuit as described in Claim 1, disposed on the substrate; and

A control unit is used for actuating according to the sensing voltage potential of the temperature sensing circuit.

In order to solve the above problems, the present invention also provides an operation method of a temperature sensing circuit, the temperature sensing circuit includes a temperature sensing module, a reading module and a reset module, the temperature sensing module has a first terminal and a second end, the reset module is electrically coupled between the second end of the temperature sensing module and a low voltage potential, the reading module is electrically coupled to the second end of the temperature sensing module, Methods of operation of the temperature sensing circuit include:

using the temperature sensing module to provide a sensing voltage potential to the second end of the temperature sensing module according to the sensed temperature;

making the reading module output the sensing voltage level according to a first control signal; and

The reset module resets the sensing voltage level to the low voltage level according to a second control signal.

In the above method of operating the temperature sensing circuit, the temperature sensing circuit further includes a driving module, and the operating method of the temperature sensing circuit further includes:

The driving module receives the first control signal and outputs the second control signal to the reset module, and the first control signal and the second control signal are opposite phases.

In the above method of operating the temperature sensing circuit, the temperature sensing circuit further includes a capacitor electrically coupled to the reading module, and the operating method of the temperature sensing circuit further includes:

The sensing voltage potential output by the reading module is stored by using the capacitor.

The above-mentioned operation method of the temperature sensing circuit further includes:

The sensing voltage potential stored in the capacitor is read out.

To sum up, since the embodiment of the temperature sensing circuit of the present invention is arranged on the substrate in the display, the temperature sensing circuit can directly detect the current temperature of the substrate, and the temperature sensing module of the temperature sensing circuit is composed of multiple series connected diodes or multiple transistors connected in series, so it has higher temperature sensitivity, can detect the current temperature more accurately, and reduces the occurrence of display errors due to temperature changes. In addition, the temperature of the present invention The embodiment of the sensing circuit only needs to use a first control signal to perform temperature sensing, which greatly increases the convenience of temperature sensing, and because the embodiment of the temperature sensing circuit of the present invention uses the sensing voltage potential to determine the current substrate Therefore, it has a wider detection temperature range.

Description of drawings

1 is a schematic diagram of a display with a temperature sensing circuit of the present invention;

2 is a schematic diagram of an embodiment of a temperature sensing circuit of the present invention;

FIG. 3A is a graph 1 of a temperature sensing circuit embodiment of the present invention;

FIG. 3B is a graph 2 of a temperature sensing circuit embodiment of the present invention;

FIG. 4 is a schematic diagram of the steps of the method for operating the temperature sensing circuit of the present invention.

Among them, reference signs:

10 substrate 11 temperature sensing circuit

12 Power control unit 13 Control unit

14 gate driver 15 display unit

151 pixel unit 16 data drivers

161 data cable 110 drive module

112 Temperature Sensing Module                                                                                                

116 read module 300, 302, 304, 306 steps

C capacitor S1 first control signal

S2 second control signal S3 voltage control signal

Vdd high voltage potential Vss low voltage potential

Von temperature sensing across voltage Vo sensing voltage potential

Vsens output voltage potential V _GH operating voltage of gate driver

T1, T2, T3, T4, Tn transistors

Detailed ways

Please refer to Fig. 1, Fig. 1 is the display embodiment with temperature sensing circuit of the present invention, described display comprises a substrate 10, a temperature sensing circuit 11, a power supply control unit 12, a control unit 13, a gate pole driver 14 , a display unit 15 and a data driver 16 . The temperature sensing circuit 11, the power control unit 12, the control unit 13, the gate driver 14, the display unit 15 and the data driver 16 are arranged on the substrate 10, and the display unit 15 includes a plurality of pixel units 151, and each pixel unit 151 is connected to the gate The electrode driver 14 and the data driver 16 are electrically coupled, and each pixel unit 151 is used for turning on according to the driving signal output by the gate driver 14 , and receiving display data output by the data driver 16 through a plurality of data lines 161 .

The temperature sensing circuit 11 is electrically coupled to the power control unit 12 to receive power, and the temperature sensing circuit 11 is further electrically coupled to the control unit 13 for outputting an output voltage potential Vsens calculated according to the sensed temperature to Control unit 13; the control unit 13 is electrically coupled with the power control unit 12, and is used to obtain the current temperature of the substrate 10 according to the received output voltage potential Vsens, and then provide a voltage control signal S3 to the power control unit according to the current temperature 12, so that the power supply control unit 12 can adjust the working voltage V _GH provided to the gate driver 14 according to the received voltage control signal S3; the gate driver 14 is electrically coupled with a plurality of pixel units 151 in the display unit 15, and used The plurality of pixel units 151 can be turned on in a correct period according to the working voltage provided by the power control unit 12 . Since the temperature sensing circuit 11 of the present invention can be directly arranged on the substrate 10, it can sense the temperature change of the substrate 10 more directly and accurately, so that the power control unit 12 can more accurately adjust the operating voltage provided to the gate driver 14 V _GH , so it can greatly reduce the malfunction of the plurality of pixel units 151 caused by the temperature of the gate driver 14 .

Please refer to FIG. 2. FIG. 2 is an embodiment of the temperature sensing circuit 11 of the present invention. The temperature sensing circuit 11 includes a driving module 110, a temperature sensing module 112, a reset module 114, a reading module 116 and a capacitor. c.

The driving module 110 can be, for example, an inverter and is electrically coupled to the reset module 114. The driving module 110 is used to receive a first control signal S1 and output a second control signal S2 to the reset module 114, and the first The control signal S1 and the second control signal S2 are opposite phases. The driving module 110 may include a first transistor T1 and a second transistor T2. The first transistor T1 has a first terminal, a second terminal and a gate terminal. The first terminal and the gate terminal of the first transistor T1 are used to receive A high voltage potential Vdd, the second terminal of the first transistor T1 is used to output the second control signal S2. The second transistor T2 has a first terminal, a second terminal and a gate terminal, the first terminal of the second transistor T2 is electrically coupled to the second terminal of the first transistor T1, and the gate terminal of the second transistor T2 is used for After receiving the first control signal S1, the second terminal of the second transistor T2 is used to electrically couple with the low voltage potential Vss, wherein the low voltage potential Vss may be grounded. Therefore, when the first control signal S1 is at the working voltage potential, such as the aforementioned high voltage potential Vdd, the second transistor T2 will be turned on to pull down the second control signal S2 at the first end of the second transistor T2 to the low voltage potential Vss , thus outputting a second control signal S2 that is inverted from the first control signal S1. When the first control signal S1 is at a low voltage level, the second transistor T2 will be turned off, and the first terminal of the second transistor T2 will output the working voltage provided by the second terminal of the first transistor T1, so the output is the same as that of the first The control signal S1 is an inverted second control signal S2. In addition, the aforementioned driving module 110 may also be a logic gate capable of outputting an output signal that is inverse to the input signal, such as an inverse gate, an AND gate, an inverse AND gate, and the like.

The temperature sensing module 112 is electrically coupled to the reset module 114, and has a first end and a second end. The first end of the temperature sensing module 112 is used to receive the high voltage potential Vdd, and the second end of the temperature sensing module 112 is It is used to output the sensing voltage potential Vo, and the temperature sensing module 112 is composed of a plurality of transistors Tn connected in series, each transistor Tn has a first terminal, a second terminal and a gate terminal, the gate of each transistor Tn The pole is electrically coupled to the first end of each transistor. In addition, the temperature sensing module 112 can also be formed by a plurality of diodes connected in series. When the temperature sensing module 112 senses temperature, the temperature sensing module 112 will have different temperature sensing cross-voltage Von between the transistor Tn strings or diode strings due to the difference of the current temperature, and the temperature sensing module 112 can use Vo=Vdd-Von The sensing voltage potential Vo is obtained by the calculation method, and since the number of transistors or diodes is proportional to the temperature sensitivity, and the temperature sensing module 112 is formed by connecting multiple transistors or diodes in series, the output sensing voltage potential Vo can be Has high temperature sensitivity.

The reset module 114 is electrically coupled with the temperature sensing module 112 and the driving module 110. The reset module 114 is used to receive the second control signal S2 output by the driving module 110 and determine whether to sense the voltage level according to the second control signal S2. Vo resets to the low voltage potential Vss. The reset module 114 is a transistor T3, which has a first terminal, a second terminal and a gate terminal, the first terminal of the transistor T3 is electrically coupled to the second terminal of the temperature sensing module 112, and the gate terminal of the transistor T3 For receiving the second control signal S2, the second terminal of the transistor T3 is used for electrically coupling with the low voltage potential Vss. When the second control signal S2 is at the working voltage level, the transistor T3 is turned on, so the sensing voltage level Vo at the first end of the transistor T3 will be reset to the low voltage level Vss, and when the second control signal S2 is at the low voltage level When , the transistor T3 is turned off, so the first terminal of the transistor T3 outputs the sensed sensing voltage potential Vo.

The reading module 116 is electrically coupled to the temperature sensing module 112 for receiving the sensing voltage Vo, and determines whether to output the sensing voltage Vo to the capacitor C according to the first control signal S1. The reading module 116 is a transistor T4, which has a first terminal, a second terminal and a gate terminal, the first terminal of the transistor T4 is used to receive the sensing voltage potential Vo, and the gate terminal of the transistor T4 is used to receive the first The second end of the transistor T4 is electrically coupled to the capacitor C for the control signal S1. When the first control signal S1 is at the working voltage level, the transistor T4 is turned on, and the sensing voltage level Vo is read out and stored in the capacitor C, and when the first control signal S1 is at the low voltage level, the transistor T4 is turned off, The sensing voltage potential Vo is no longer read out.

The capacitor C has a first end and a second end, the first end of the capacitor C is electrically coupled to the second end of the reading module 116, the second end of the capacitor C is electrically coupled to the low voltage potential Vss, and the capacitor C C is used to store the sensing voltage potential Vo output by the reading module 116, and output the sensing voltage potential Vo as the output voltage potential Vsens after the storage and reading module 116 stops outputting the sensing voltage potential Vo, and output the output voltage potential The potential Vsens is output to the control unit 13 shown in FIG. 1 to determine the current temperature of the substrate.

Next, please refer to FIG. 2 , FIG. 3A , FIG. 3B and FIG. 4 together. 3A is a graph of the first control signal S1 and the sensing voltage potential Vo of the embodiment of the temperature sensing circuit 11 of the present invention at different temperatures, wherein Vo80°C is the voltage value of the sensing voltage potential Vo at a temperature of 80°C, Vo25°C is the voltage value of the sensing voltage potential Vo at a temperature of 25°C, and Vo-25°C is the voltage value of the sensing voltage potential Vo at a temperature of -25°C. Figure 3B is a graph of the output voltage potential Vsens of the capacitor C at different temperatures, Vsens80°C is the voltage value of the output voltage potential Vsens at a temperature of 80°C, and Vsens25°C is the voltage of the sensor output voltage potential Vsens at a temperature of 25°C Value, Vsens-25°C is the voltage value of the sensor output voltage potential Vsens at a temperature of -25°C. FIG. 4 is a schematic diagram of the steps of the operation method of the embodiment of the temperature sensing circuit 11 of the present invention.

When the first control signal S1 is the working voltage potential, that is, during the period A marked in FIG. When the voltage level is high, the transistor T2 is turned on, the second control signal S2 is close to the low voltage level Vss, and the transistor T3 is turned off. Therefore, the voltage of the sensing voltage level Vo is charged by the high voltage level Vdd and starts to rise, as shown in period A in FIG. 3A As shown by the sensing voltage potential Vo, the sensing voltage potential Vo sensed at different temperatures rises to a higher voltage potential, and at this time, the transistor T2 and the transistor T4 are turned on, so the transistor T2 outputs a low voltage potential The second control signal S2, and because the second control signal S2 is at a low voltage level, the transistor T3 is turned off. At this time, because the transistor T4 is turned on, the reading module 116 reads out the sensing voltage potential Vo and stores it in the capacitor C (step 302), so the output voltage potential Vsens also increases with the sensing voltage potential Vo at this time, as shown in the figure 3B. Then when the first control signal S1 is at a low voltage level, that is, the period B indicated in FIG. 3A , the transistor T2 and the transistor T4 are turned off, and the transistor T1 outputs a second control signal S2 with an operating voltage level, so the transistor T3 is turned on. , and reset the sensing voltage potential Vo to a low voltage potential, as shown in the sensing voltage potential Vo of period B in Figure 3A, the sensing voltage potential Vo at different temperatures is all reset to a low voltage potential (step 304 ), at this time, output the output voltage potential Vsens stored by the capacitor C to the control unit 13 described in FIG. 1 (step 306), so that the control unit 13 can obtain the current temperature of the substrate 10 accordingly. The stored output voltage level Vsens returns to a low voltage level again, as shown in the output voltage level Vsens of period B in FIG. voltage potential. In addition, according to FIG. 3A and FIG. 3B , regardless of the high temperature of 80° C. or the low temperature of -25° C., the present invention can output the corresponding sensing voltage potential Vo according to the current sensing temperature, so the control unit 13 can The output voltage potential Vsens, as shown in FIG. 3B , is Vsens=13.4V to obtain the sensing result that the current temperature is 80° C., so the present invention obviously has a wider temperature detection range.

In summary, since the embodiment of the temperature sensing circuit of the present invention is arranged on the substrate in the display, the temperature sensing circuit can directly and accurately detect the current temperature of the substrate, and the temperature sensing module of the temperature sensing circuit is Composed of multiple series-connected diodes or multiple series-connected transistors, it has high temperature sensitivity, so that the embodiment of the temperature sensing circuit of the present invention does not need to use additional components such as amplifiers to achieve the purpose of high temperature sensitivity , to detect the current temperature more accurately, and reduce the occurrence of display errors due to temperature changes. In addition, the embodiment of the temperature sensing circuit of the present invention can perform temperature sensing only through a first control signal, greatly increasing the convenience of temperature sensing. And because the leakage current of the capacitor is small at low temperature, the capacitor with lower capacitance value has better temperature sensitivity at low temperature, while the leakage current of the capacitor at high temperature is larger, and the capacitor with higher capacitance value has better temperature sensitivity at high temperature. It has better temperature sensitivity at different temperatures, so if you want to use the characteristics of different leakage currents of capacitors at different temperatures to judge the current temperature, you need to choose a capacitance value that can take into account the temperature sensitivity at low temperature and high temperature. The capacitive value of the capacitor used to sense temperature changes will be limited, thereby causing the temperature that can be sensed to be limited, and the embodiment of the temperature sensing circuit of the present invention uses the sensing voltage potential sensed by the temperature sensing module to detect To judge the temperature of the current substrate, this case does not need to select a specific capacitance value in order to select a better temperature sensitivity, and it will not have a small temperature sensing range due to a specific capacitance value, so this case has a wider detection range. temperature range.

Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be determined by the claims.

Claims (10)

1. a temperature sensing circuit, is characterized in that, comprising:

One warming module, it has a first end and one second end, this first end of this warming module is in order to receive a high voltage potential, this warming module is in order to provide a sensing voltage current potential to this second end according to the temperature sensed, and this warming module is the diode of multiple serial connection or the transistor for multiple serial connection, and the drain end of each transistor of gate terminal electric property coupling of each transistor;

One read module, with this warming module electric property coupling, in order to receive this sensing voltage current potential, and determines whether export this sensing voltage current potential according to one first control signal; And

One resets module, with this warming module electric property coupling, in order to receive one second control signal, and determines whether this sensing voltage current potential is reset to a low voltage potential according to this second control signal.

2. temperature sensing circuit as claimed in claim 1, it is characterized in that, this temperature sensing circuit more comprises:

One driver module, with this replacement module electric property coupling, second control signal to this replacement module in order to receive this first control signal and to export this, this driver module is a phase inverter, and this first control signal and this second control signal are anti-phase.

3. temperature sensing circuit as claimed in claim 1, it is characterized in that, this temperature sensing circuit more comprises:

One electric capacity, has a first end and one second end, this first end of this electric capacity and this read module electric property coupling, this second end of this electric capacity and this low voltage potential electric property coupling.

4. temperature sensing circuit as claimed in claim 1, it is characterized in that, this replacement module is a first transistor, there is a first end, one second end and a gate terminal, this first end of this first transistor and this second end electric property coupling of this warming module, this gate terminal of this first transistor in order to receive this second control signal, this second end of this first transistor in order to this low voltage potential electric property coupling.

5. temperature sensing circuit as claimed in claim 3, it is characterized in that, this read module is a transistor seconds, there is a first end, one second end and a gate terminal, this first end of this transistor seconds is in order to receive this sensing voltage current potential, this gate terminal of this transistor seconds is in order to receive this first control signal, and this second end of this transistor seconds is in order to this first end electric property coupling with this electric capacity.

6. a display, is characterized in that, comprising:

One substrate, has multiple pixel and arranges thereon;

Temperature sensing circuit as described in claims 1, is arranged on this substrate; And

One control module, the start in order to this sensing voltage current potential according to this temperature sensing circuit.

7. the method for operating of a temperature sensing circuit, it is characterized in that, this temperature sensing circuit comprises a warming module, a read module and resets module, this warming module has a first end and one second end, between this second end that this replacement module is electrically coupled to this warming module and a low voltage potential, this the second end electric property coupling of this read module and this warming module, the method for operating of this temperature sensing circuit comprises:

This warming module is utilized to provide a sensing voltage current potential to this second end of this warming module according to the temperature sensed;

This read module is made to export this sensing voltage current potential according to one first control signal; And

Make this replacement module, according to one second control signal, this sensing voltage current potential be reset to this low voltage potential.

8. the method for operating of temperature sensing circuit as claimed in claim 7, it is characterized in that, this temperature sensing circuit more comprises a driver module, and the method for operating of this temperature sensing circuit more comprises:

Utilize this driver module to receive this first control signal and export this and second control signal to this replacement module, this first control signal and this second control signal are anti-phase.

9. the method for operating of temperature sensing circuit as claimed in claim 7, it is characterized in that, this temperature sensing circuit more comprises an electric capacity, itself and this read module electric property coupling, and the method for operating of this temperature sensing circuit more comprises:

This electric capacity is utilized to store this sensing voltage current potential of this read module output.

10. the method for operating of temperature sensing circuit as claimed in claim 9, it is characterized in that, it also comprises:

Read this sensing voltage current potential being stored in this electric capacity.