CN104592896A - Chemical mechanical polishing solution - Google Patents

Abstract

A chemical mechanical polishing liquid, based on the total mass of the chemical mechanical polishing liquid, the chemical mechanical polishing liquid includes the following components and weight percentages: oxide polishing particles 5 ~ 50wt%, oxidizing agent 0.1 ~ 2wt%, 0.01-2wt% of chelating agent, 0.01-2wt% of complexing agent, 0.01-2wt% of surfactant, and the balance is pH regulator and water. The chemical mechanical polishing liquid disclosed in the present invention can achieve high metal removal efficiency; high metal surface quality without obvious defects such as orange peel, corrosion pits and scratches.

Description

A chemical mechanical polishing fluid

technical field

The invention relates to a polishing liquid, in particular to a chemical mechanical polishing liquid used on aluminum, iron and alloy materials thereof.

Background technique

There are several methods of traditional metal surface polishing: mechanical polishing, chemical polishing and electrolytic polishing. Mechanical polishing is to remove the protruding part of the surface by cutting and plastic deformation of the material surface to obtain a smooth surface. Although this method has a good planarization effect, it is easy to cause damage on the surface. Chemical polishing is the use of chemical media to preferentially dissolve the protruding parts of the surface to obtain a flat surface. This method has no damage to the surface, but the planarization effect is not good enough. The basic principle of electropolishing is similar to that of chemical polishing. These polishing methods can meet the needs of most of the surface smoothness of metal parts, but it is not enough for some applications with relatively high requirements, and chemical mechanical polishing methods need to be applied.

The chemical mechanical polishing technology is to obtain an ultra-flat surface through the cooperation of the mechanical action of the abrasive and the chemical action of the chemical composition. Chemical mechanical polishing technology is a very important surface planarization technology, which is widely used in the preparation of integrated circuit chips, silicon wafer polishing, sapphire wafers, SiC wafers, metal panels and other materials and devices. Continuously improving polishing efficiency and surface quality is the main development direction of chemical mechanical polishing technology. The chemical mechanical polishing technology is to obtain an ultra-flat surface through the cooperation of the mechanical action of the abrasive and the chemical action of the chemical composition, in which the abrasive plays an important role in the polishing efficiency.

Since the integrated circuit chip field has high requirements on the performance of the surface of the material, different materials can be polished with chemical mechanical polishing techniques to achieve different results. Different components of chemical mechanical polishing fluid will ultimately affect the properties of materials. When the chemical mechanical polishing fluid in the prior art is used, in order to achieve good polishing quality, its polishing efficiency is still not high, resulting in production lag and increased production cost.

Contents of the invention

The object of the present invention is to provide a chemical mechanical polishing liquid, which is used to overcome the problems of low polishing rate and inability to balance the polishing effect in the prior art.

To achieve the above object, the present invention is achieved by taking the following specific technical solutions:

A chemical mechanical polishing liquid, in terms of the total mass of the chemical mechanical polishing liquid, the chemical mechanical polishing liquid comprises the following components and weight percentages:

The balance is a pH adjuster and water.

Preferably, the oxide polishing particles are 10-45wt%.

Preferably, the chelating agent is 0.03-0.5wt%.

Preferably, the complexing agent is 0.03-0.5wt%.

Preferably, the surfactant is 0.1-1 wt%.

Preferably, the oxide polishing particles are selected from colloidal silicon dioxide, and the particle size of the silicon dioxide in the colloidal silicon dioxide ranges from 20 to 1500 nm. The metal chemical mechanical polishing fluid provided by the invention contains dioxide polishing particles. Silica particles can be prepared by ion exchange method, silicon powder dissolution method or methyl orthosilicate, and can also be purchased through commercial channels.

Preferably, the particle size range of the silica is 30-200nm

Preferably, the oxidizing agent is selected from one or more of hydrogen peroxide, persulfate, periodate, hypochlorite, nitrate, nitrite, percarbonate and perborate.

Preferably, the chelating agent is selected from nitrilotriacetic acid, hydroxyethylidene diphosphonic acid, sodium ethylenediaminetetramethylphosphonate, diethylenetriaminepentamethylenephosphonic acid, ethylenediaminedi-o-phenylacetic acid and tri One or more of sodium polyphosphate. The chelating agent can form a chelating ring with metal Al ³⁺ or Fe ³⁺ plasma, thereby accelerating the removal rate of metal materials.

Preferably, the complexing agent is selected from one or more of ethylenediaminetetraacetic acid, disodium edetate, tetrasodium edetate and potassium sodium tartrate. Complexing agents can form complex ion compounds with metal Al ³⁺ or Fe ³⁺ ions.

Preferably, the surfactant is selected from sodium dodecylbenzenesulfonate, sodium polyoxyethylene sulfate, sodium polyacrylate, polyoxyethylene ether phosphate, alkyl alcohol polyoxyethylene ether, cetyl tris One or more of methyl ammonium bromide. Surfactants can be adsorbed by the metal surface to protect the surface and reduce surface defects such as corrosion and orange peel.

Preferably, the pH regulator is selected from one or more of nitric acid, phosphoric acid, potassium hydroxide, sodium hydroxide, ammonia water, hydroxyethylethylenediamine, tetramethylammonium hydroxide and ethylenediamine. The pH value has an effect on the polishing rate, surface quality and stability of the polishing fluid.

Preferably, the pH of the chemical mechanical polishing solution is 8-12.

More preferably, the pH of the chemical mechanical polishing solution is 8-12.

The invention also discloses a preparation method of the above-mentioned chemical mechanical polishing liquid, which is to uniformly mix each raw material component according to each weight part.

The present invention also discloses the application of the above-mentioned chemical mechanical polishing liquid on aluminum, iron and alloy materials thereof.

The beneficial effects of the chemical mechanical polishing fluid disclosed in the present invention are:

1) High metal removal efficiency;

2) High metal surface quality, no obvious defects such as orange peel, corrosion pits and scratches.

The chemical mechanical polishing liquid in the present invention overcomes various defects in the prior art and has creativity.

Detailed ways

The present invention will be further described in detail by the following examples, the following examples are only used to illustrate the present invention, without any limitation to the scope of the present invention, any modification and variation that can be easily realized by those skilled in the art are included in within the scope of the invention and the appended claims.

The instrument and parameter of metal polishing test in the present embodiment are as follows:

A. Instrument: polishing machine (SPAW32)

B. Conditions: Pressure (Down Force): 1psi

Polishing pad speed (Pad Speed): 60rpm

Polishing head speed (Carrier Speed): 60rpm

Temperature: 25°C

Polishing fluid flow rate (Feed Rate): 100ml/min

C. Polishing liquid: the polishing liquid obtained in the examples is tested.

After the aluminum-iron alloy was polished by the SPAW32 polishing machine of Chuang Technology Company, the roughness RMS (Root Mean Square) of the 2 μm × 2 μm area on the surface of the titanium alloy was measured by an AFM atomic force microscope, and the polishing rate was tested by weighing method.

Example 1

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silicon dioxide particles with an average particle size of 100 nm; the oxidizing agent is ammonium persulfate; the chelating agent is nitrilotriacetic acid; and the complexing agent is disodium edetate ; The surfactant is sodium polyacrylate. In this embodiment, the pH of the chemical mechanical polishing solution is 10, and the pH regulator is sodium hydroxide.

Example 2

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silica particles with an average particle diameter of 500nm; the oxidizing agent is sodium hypochlorite; the chelating agent is sodium ethylenediamine tetramethyl phosphonate; the complexing agent is sodium potassium tartrate ; The surfactant is an alkyl alcohol polyoxyethylene ether. In this embodiment, the pH of the chemical mechanical polishing solution is 9, and the pH regulator is ammonia water.

Example 3

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silica particles with an average particle size of 150nm; the oxidizing agent is ammonium persulfate; the chelating agent is diethylenetriaminepentamethylenephosphonic acid; the complexing agent is ethyl Diaminetetraacetic acid; The surfactant is cetyltrimethylammonium bromide. In this embodiment, the pH of the chemical mechanical polishing solution is 8.5, and the pH regulator is ammonia water.

Example 4

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silica particles with an average particle size of 50nm; the oxidizing agent is hydrogen peroxide; the chelating agent is sodium tripolyphosphate; and the complexing agent is disodium edetate; The surfactant is cetyltrimethylammonium bromide. In this embodiment, the pH of the chemical mechanical polishing solution is 8.0, and the pH regulator is ammonia water.

Example 5

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silica particles with an average particle diameter of 80nm; the oxidizing agent is sodium perborate; the chelating agent is ethylenediamine di-o-phenylacetic acid; the complexing agent is ethylene diamine Disodium amine tetraacetate; The surfactant is cetyltrimethylammonium bromide. In this embodiment, the pH of the chemical mechanical polishing solution is 10, and the pH regulator is ethylenediamine.

Example 6

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silicon dioxide particles with an average particle size of 150nm; the oxidizing agent is hydrogen peroxide; the chelating agent is hydroxyethylidene diphosphonic acid; the complexing agent is ethylenediaminetetraacetic acid; The surfactant is cetyltrimethylammonium bromide. In this embodiment, the pH of the chemical mechanical polishing solution is 9, and the pH regulator is ammonia water.

Example 7

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silicon dioxide particles with an average particle diameter of 200nm; the oxidizing agent is sodium persulfate; the chelating agent is diethylenetriaminepentamethylenephosphonic acid; the complexing agent is ethyl Tetrasodium diamine tetraacetate; The surfactant is sodium polyoxyethylene sulfate. In this embodiment, the pH of the chemical mechanical polishing solution is 10, and the pH regulator is ammonia water.

Example 8

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silicon dioxide particles with an average particle size of 200nm; the oxidizing agent is hydrogen peroxide; the chelating agent is ethylenediamine di-o-phenylacetic acid; the complexing agent is ethylenediaminetetra Disodium acetate; The surfactant is sodium dodecylbenzenesulfonate. In this embodiment, the pH of the chemical mechanical polishing solution is 9, and the pH regulator is ammonia water.

Example 9

In the present embodiment, the polishing solution comprises the following components and parts by weight:

The balance is a pH adjuster and water.

Wherein, the oxide polishing particles are silicon dioxide particles with an average particle size of 100 nm; the oxidizing agent is sodium persulfate; the chelating agent is sodium tripolyphosphate; the complexing agent is ethylenediaminetetraacetic acid Sodium; the surfactant is sodium polyoxyethylene sulfate. In this embodiment, the pH of the chemical mechanical polishing solution is 9, and the pH regulator is ammonia water.

Table 1

Example Polishing rate (mg/min) Roughness RMS(nm) 1 1 1.22 2 3.6 1.57 3 1.3 1.89 4 3.3 1.58 5 2.8 1.60 6 1.8 0.97 7 3 1.41 8 6.5 5.6 9 0.5 0.23

It can be seen from Table 1 that the chemical mechanical polishing slurry provided by the present invention can control the polishing rate of aluminum-iron alloys from 0.5 mg/min to 6.5 mg/min, while the surface roughness is reduced to the order of nm.

The above-mentioned embodiments only illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical ideas disclosed in the present invention should still be covered by the claims of the present invention.

Claims (10)

1. a chemical mechanical polishing liquid, is characterized in that, in the total mass of described chemical mechanical polishing liquid, described chemical mechanical polishing liquid comprises following component and weight percentage:

2. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described oxide cmp particle is selected from colloid silica, and in described colloid silica, the particle size range of silicon-dioxide is 20 ~ 1500nm.

3. chemical mechanical polishing liquid as claimed in claim 2, it is characterized in that, the particle size range of described silicon-dioxide is 30 ~ 200nm.

4. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described oxygenant be selected from hydrogen peroxide, persulphate, periodate, hypochlorite, nitrate, nitrite, percarbonate and perborate one or more.

5. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described sequestrant be selected from nitrilotriacetic acid(NTA), 1-Hydroxy Ethylidene-1,1-Diphosphonic Acid, ethylenediamine tetraacetic methyl-phosphorous acid sodium, diethylene triamine pentamethylene phosphonic, the adjacent phenylacetic acid of quadrol two and tripoly phosphate sodium STPP one or more.

6. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described complexing agent be selected from ethylenediamine tetraacetic acid (EDTA), disodium ethylene diamine tetraacetate, tetrasodium ethylenediamine tetraacetate and Seignette salt one or more.

7. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, described tensio-active agent be selected from Sodium dodecylbenzene sulfonate, polyoxyethylene sodium sulfate, sodium polyacrylate, polyoxyethylene ether phosphate, alkyl alcohol polyoxyethylene ether, cetyl trimethylammonium bromide one or more.

8. chemical mechanical polishing liquid as claimed in claim 1, is characterized in that, described pH adjusting agent is selected from one or more of nitric acid, phosphoric acid, potassium hydroxide, sodium hydroxide, ammoniacal liquor, hydroxyethyl second diamino, tetramethyl-aqua ammonia and quadrol.

9. chemical mechanical polishing liquid as claimed in claim 1, it is characterized in that, the pH of described chemical mechanical polishing liquid is 8 ~ 12.

10. prepare the application of chemical mechanical polishing liquid on aluminium, iron and alloy material thereof as described in any one of claim 1 ~ 9 for one kind.