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CN104579224B - For driving and/or detecting the opto-mechanical device of the movement of mechanical organ - Google Patents

For driving and/or detecting the opto-mechanical device of the movement of mechanical organ Download PDF

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Publication number
CN104579224B
CN104579224B CN201410568859.2A CN201410568859A CN104579224B CN 104579224 B CN104579224 B CN 104579224B CN 201410568859 A CN201410568859 A CN 201410568859A CN 104579224 B CN104579224 B CN 104579224B
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China
Prior art keywords
mechanical
opto
optical
support
organ
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CN104579224A (en
Inventor
塞巴斯蒂安·海恩茨
劳伦特·杜拉福格
纪尧姆·约丹
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01V—GEOPHYSICS; GRAVITATIONAL MEASUREMENTS; DETECTING MASSES OR OBJECTS; TAGS
    • G01V7/00—Measuring gravitational fields or waves; Gravimetric prospecting or detecting
    • G01V7/005—Measuring gravitational fields or waves; Gravimetric prospecting or detecting using a resonating body or device, e.g. string
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/266—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light by interferometric means
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/268—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light using optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/26—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light
    • G01D5/32—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light
    • G01D5/34—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells
    • G01D5/353—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre
    • G01D5/35306—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement
    • G01D5/35309—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer
    • G01D5/35312—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable characterised by optical transfer means, i.e. using infrared, visible, or ultraviolet light with attenuation or whole or partial obturation of beams of light the beams of light being detected by photocells influencing the transmission properties of an optical fibre using an interferometer arrangement using multiple waves interferometer using a Fabry Perot
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01G—WEIGHING
    • G01G3/00—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances
    • G01G3/12—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing
    • G01G3/16—Weighing apparatus characterised by the use of elastically-deformable members, e.g. spring balances wherein the weighing element is in the form of a solid body stressed by pressure or tension during weighing measuring variations of frequency of oscillations of the body
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume or surface-area of porous materials
    • G01N15/06—Investigating concentration of particle suspensions
    • G01N15/0606—Investigating concentration of particle suspensions by collecting particles on a support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N5/00—Analysing materials by weighing, e.g. weighing small particles separated from a gas or liquid
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
    • G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
    • G02B6/29331—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by evanescent wave coupling
    • G02B6/29335—Evanescent coupling to a resonator cavity, i.e. between a waveguide mode and a resonant mode of the cavity
    • G02B6/29338—Loop resonators
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/26—Optical coupling means
    • G02B6/35—Optical coupling means having switching means
    • G02B6/3536—Optical coupling means having switching means involving evanescent coupling variation, e.g. by a moving element such as a membrane which changes the effective refractive index

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geophysics (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

一种用于驱动和/或检测机械元件的运动的光机械器件。光机械器件包括支座(20)，支座上具有：锚固到支座并且设计成相对于支座运动的至少一个机械元件(26)，以及驱动和/或检测机械元件的运动或运动频率变化的器件，其中，驱动和/或检测装置的至少一部分在机械元件和支座之间被布置在机械元件的全体或一部分下方，其中，驱动和/或检测装置包括相对于支座固定的光学器件(21)，光学器件包括在距机械元件确定距离处被布置在机械元件的全体或一部分下方的至少一个光波导(22)，且至少一个光波导设计成传播至少一个与机械元件相互作用的具有给定波长的光波，且其中，光波导在距机械元件确定距离处，使得光波导的渐逝场与机械元件相互作用。

An optomechanical device for driving and/or detecting the movement of mechanical elements. The optomechanical device comprises a support (20) having thereon: at least one mechanical element (26) anchored to the support and designed to move relative to the support, and driving and/or detecting movement of the mechanical element or changes in the frequency of movement A device in which at least a part of the drive and/or detection device is arranged between the mechanical element and the support below all or part of the mechanical element, wherein the drive and/or detection device comprises optics fixed relative to the support (21), the optical device comprising at least one optical waveguide (22) arranged below the whole or a part of the mechanical element at a determined distance from the mechanical element, and the at least one optical waveguide is designed to propagate at least one optical waveguide having interaction with the mechanical element An optical wave of a given wavelength, and wherein the optical waveguide is at a determined distance from the mechanical element, such that the evanescent field of the optical waveguide interacts with the mechanical element.

Description

For driving and/or detecting the opto-mechanical device of the movement of mechanical organ
Technical field
The present invention relates to a kind of for driving and/or detecting the opto-mechanical device of mechanical organ movement.
Opto-mechanical device can be resonating device or non-resonant device, and in resonating device, mechanical organ constitutes humorous Shake device.
Present invention is particularly suitable for weight detecting, it is preferably adapted for capturing surface weight detection greatly.
The present disclosure additionally applies for any kind of detections based on frequency, for example, terahertz imaging or heat radiation measurement neck Domain.
Background technique
The resonating device driven in using face is known.All these devices all include parallel with the substrate of these devices Bar.Referring to following file:
The invention of WO2012/034949, S.Hentz；
The invention of WO2012/034951, S.Hentz et al.；
The invention of WO2012/034990, S.Hentz.
Principle of tuned mass detection is summarized at this.
It is the particle or one group of particle of mp that considering, which has gross mass, positioned at the resonator with rigidity k and effective mass m Surface.The resonance frequency of resonator is then equal toThus, frequency before and after deposition quality mp is rung Answer peak value (under open loop case) deviate one withThe little amount Δ f of difference.Thus, when resonator be used to close When in ring, resonance frequency can be monitored in real time by means of electrical switching device and closed-loop device.
It can be seen that the single or a group particle of the analyte in resonator surface causes the prominent of the resonance frequency of resonator So decline.The quality of particle or population can be derived from the measured value Δ f of the sudden change of the frequency.
The testing principle just summarized is completely general and various devices become known for will test principle investment application, especially It is SAW resonator, bulk acoustic wave resonator, quartz crystal microbalance and MEMS (Micro-Electro-Mechanical System) bar.
However, resonating device advantageously can be NEMS, because being given above the expression formula Δ f table for frequency agility Show, frequency increases the sensitivity of additional mass with the reduction of resonator gross mass.Thus, the resonator of nano-scale In terms of part has the advantages that sensitivity and in terms of detectable limit.It therefore, can be than using using the quality of NEMS systematic survey The quality of quartz crystal microbalance measurement is small by 1012Times.About this problem, referring to following file:
K.L.Ekinci, Y.T.Tang and M.L.Roukes, 2004, " Ultimate limits to inertial Mass sensing based upon nanoelectromechanical systems (the inertia matter based on nano electromechanical systems Measure the final limit of sensing) ", Journal of Applied Physics (applied physics magazine) 95 (5): 2682.doi: 10.1063/1.1642738。
Similarly, it is recently measured about 1yg (yoctogram, gram) (10-27Kg quality).About this problem, Referring to following file:
J.Chaste, A.Eichler, J.Moser, G.Ceballos, R.Rurali and A.Bachtold, 2012, " A Nanomechanical mass sensor with yoctogram resolution (the mechanical matter of receiving with gram resolution ratio Quantity sensor) ", Nature Nanotechnology (natural nanotechnology) 7:301-304.doi:10.1038/ nnano.2012.42。
Quality Resonance detector has very more applications.For example, (1) is used for the chemical sensor of gas detection, (2) are in liquid Body environment is used to detect the mass spectral analysis (NEMS-MS) of biosensor and (3) based on NEMS of biological cell.For these Using detectable limit (the smallest detectable quality) obviously has importance above all, not just more accurately determining Measured quality total amount, and be to the type for being fine distributed very much or being diluted in the carrier components of significant volume into Row detection.
(1) in the case of chemical sensors for gas detection, NEMS be used to be functionalized layer covering Surface, functionalization layer have specific chemical affinity for some substances to be measured.Particle corresponding to these substances exists It is absorbed in the layer, or by uniform pickup in the whole surface of NEMS.
When the concentration to be measured is very low, become very small by the probability of the very small area capture substance of NEMS.Selection Property addressing array can then be used to make full use of the extraordinary sensitivity of multiple resonators.However it is also able to use big Capture area.About this problem, with reference to following file:
I.Bargatin, E.B.Myers, J.S.Aldridge, C.Marcoux, P.Brianceau, L.Duraffourg, E.Colinet, S.Hentz, P.Andreucci and M.L.Roukes, 2012, " Large-scale integration of Nanoelectromechanical systems for gas sensing applications is (for gas sensing application The large scale of nano electromechanical systems is integrated) ", Nano letters (nanometer communication) 12 (3) (in March, 14): 1269-74.doi: 10.1021/nl2037479
It and is more specifically Fig. 1 in this document.
(2) in the case where being located at the biosensor of liquid environment, problem is identical as chemical sensor even more tight Weight: in the case, resonating device is placed in that there are in the liquid environment of biomone to be detected.These biomones are possible must It must detect respectively, the concentration of particle can become very low at this time.Similarly it is possible to need using passing through or not by individually seeking The resonator array of location and functionalization or non-functionalization.About this problem, with reference to following file:
S.Guillon, S.Salomon, F.Seichepine, D.Dezest, F.Mathieu, A.Bouchier, L.Mazenq, C.Thibault, C.Vieu, T.And L.Nicu, 2012, " Biological functionalization of massively parallel arrays of nanocantilevers using Microcontact printing (using the biological functional of the large-scale parallel array of the nanometer cantilever of microcontact printing) ", Sensors and Actuators (sensor and driver) B: chemical 161 (January): 1135-1138.doi:10.1016/ j.snb.2011.10.084
It and is more specifically Fig. 1 in this document.
(3) in the case where NEMS-MS system, this includes each particle (for example, biomone) for mixture Quality, which measures, deposits, which is initially liquid phase and is projected onto NEMS under vacuum to determine the matter of mixture content Spectrum, such as in biological medicine identification application.Such system is shown in Fig. 1 in following file, and this document is related to:
A.K.Naik, M.S.Hanay, W.K.Hiebert, X.L.Feng and M.L.Roukes, 2009, " Towards Single-molecule nanomechanical mass spectrometry (receives mechanical mass spectroscopy about unimolecule Method) ", Nature Nanotechnology (natural nanotechnology) 4:445-450.doi:10.1038/NNANO.2009.152.
One main problem of the system is to be detected using single NEMS to the particle being incident upon on the surface NEMS: In general, surface has 1 μm2Area, while the particle beams may have about several squares millis according to the difference of projection system type Rice arrives several square centimeters of projected area.
This again show using high density NEMS array it is decisive for the use of to maximize capture area.But in NEMS- In the case of MS, the additional problem that is not present in the first two cases there are one: this is related to as point mass or to when young In resonator area and the quality of particle that is not distributed in resonator surface measures.However, by the additional of particle The frequency displacement of initiation depends not only on quality, additionally depends on the position on particle arrival resonator.It is necessary to multiple resonance frequencies Rate carries out real-time measurement, rather than only measures to one.About this problem, with reference to following file:
S.Dohn, W.Svendsen, A.Boisen and O.Hansen, 2007, " Mass and position Determination of attached particles on cantilever based mass sensors (is based on quality Sensor is determined the quality of the attachment particle on cantilever and position) ", Review of Scientific Instruments (scientific instrument comment) 78:103303.doi:10.1063/1.2804074.
The case where the power for wanting to apply adventive object, particle or the molecule in mechanical structure measures Under, mechanical structure need not necessarily be resonance.
(1) to (3) in the case of, such as bar or cantilever for detecting particle etc (three-dimensional) element tool There is 10 times of size (length) (and being therefore taken as one-dimensional) bigger than size under other two dimensions.The size will formed In the plane of the substrate of device.
In addition, the conversion equipment (a) used is in the same plane of the device, (b) or parallel with the plane of device It is equal in plane and at a distance from device multiple layers of thickness being deposited on device.
About situation (a), with reference to following file:
E.Mile, G.Jourdan, I.Bargatin, S.Labarthe, C.Marcoux, P.Andreucci, S.Hentz, C.Kharrat, E.Colinet and L.Duraffourg, 2010, " In-plane nanoelectromechanical Resonators based on silicon nanowire piezoresistive detection (is based on silicon nanowires pressure Electromechanical resonator is received in the face of resistive detection) ", Nanotechnology (nanotechnology) 21 (16) (23Aoril): 165504.doi:10.1088/0957‐4484/21/16/165504
It and is specifically Fig. 1 in this document.
About situation (b), with reference to following file:
Mo Li, H.X.Tang and M.L.Roukes, 2007, " Ultra-sensitive NEMS-based Cantilevers for sensing, scanned probe and very high-frequency applications, (cantilever applied for sensing, scanning probe and hyperfrequency based on hypersensitization NEMS) " Nature nanotechnology (natural nanotechnology) 2 (2) (2 months): 114-20.doi:10.1038/nnano.2006.208
It and is specifically Fig. 1 in this document.Following file also relates to:
P.Ivaldi, J.Abergel, M.H.Matheny, L.G.Villanueva, R.B.Karabalin, M.L.Roukes, P.Andreucci, S.Hentz and E.2011, " 50nm thick AlN film-based Piezoelectric cantilevers for gravimetric detection (is used for weight based on 50nm thickness AlN film The cantilever of detection) ", Journal of Micromechanics and Microengineering (micromechanics and micro engineering Magazine) 21:085023.doi:10.1088/0960-1317/21/8/085023
It and is specifically Fig. 3 in this document.
Connection thus must be present in plane identical with device itself.
These features (the one-dimensional element in substrate plane, need to draw line in the plane of the device) allow to obtain Good SA/SI ratio, wherein SA deputy activity area, that is, the vibration surface area of obtained MEMS or NEMS, with And SI is inactive area, that is, non-vibrating surface area.Therefore, the capture area of element to be detected is very small.For example, It is difficult to obtain the activity surface density for being greater than 1% with these.
Summary of the invention
The purpose of the present invention is overcome disadvantages described above.
According to an aspect of the present invention, crystal column surface is divided into basic " pixel " with high coverage density, and All not as not or the part on surface (for example, conversion equipment, line, contact) is located at below these pixels.
It should be noted that the present invention is not limited to use wafer；Support included by device disclosed in this invention can lead to Cross other way acquisition.
Light conversion has been used according to another aspect of the present invention.The electricity conversion of such light conversion proportion such as pressure resistance type system System is simpler, and power conversion system needs the junior's production tool for being interconnected in active surface by usage type in CMOS method There is highdensity small size contact point.In practice, this even causes that CMOS is needed to integrate altogether, because there may be a large number of Electrical connection.
Specifically, the purpose of the present invention is a kind of opto-mechanical devices, comprising:
Support, and included on the support
At least one mechanical organ, at least one described mechanical organ are anchored to the support and are designed to phase For the support movement, and
For driving the variation of the mechanical organ and/or movement or motion frequency for detecting the mechanical organ Device, wherein it is described driving and/or detection device at least part between the mechanical organ and the support by cloth The lower section of the entirety or a part in the mechanical organ is set,
Wherein, the driving and/or detection device include the optical device fixed relative to the support, the optics device Part includes at least one optical waveguide, at least one described optical waveguide is disposed in institute at the distance determined away from the mechanical organ State the entirety of mechanical organ or the lower section of a part, and at least one described optical waveguide is designed to propagate at least one and has The light wave of setted wavelength, the light wave is designed to interact with the mechanical organ, and wherein, the optical waveguide is located at At the distance determined away from the mechanical organ, so that the evanescent field of the optical waveguide and the mechanical organ interact.
" evanescent field and the mechanical organ interact " refers to that the evanescent field is interfered in the displacement of the mechanical organ.
Mechanical organ or multiple mechanical organs can be resonance or non-resonant.
The support can have plane surface.Mechanical organ can also have the shape of elongation, such as in rod, the shape Shape can or out of plumb vertical with the surface.
Preferably, the mechanical organ have with made by the device in the vertical element of the plane of layer, the member Part has the one end that anchors to one end of the support and can move in the plane parallel with the plane of the layer, or tool There is the element parallel with the plane of the layer, the element suspends relative to the support by least both ends and can be with institute State the plane vertical ground motion of layer.
A specific embodiment according to the present invention, it is humorous that the mechanical organ forms the machinery with given resonance frequency Shake device.
The quantity of optical device can be less than or equal to the quantity of the mechanical organ.
In the case where above-mentioned specific embodiment, device disclosed in this invention may include one of each mechanical organ Optical device or for one group with mutually different resonance frequency mechanical organ an Optical devices.
A specific embodiment of disclosed opto-mechanical device according to the present invention, the optical device further includes optical resonance Device, the optical resonator is optically coupling to the waveguide.The optical resonator can be in the form of ring.However it the present invention and not only limits In the shape；Other shapes are also it is contemplated that for example, the combination of " runway " shape, elliptical shape etc. or these shapes.
A specific embodiment according to the present invention, the mechanical organ include being designed to receive one or more particles Receiving area, one or more of particles can cause or change the movement of the mechanical organ, will pass through by described The signal that detection device provides determines the physical property of the particle or the multiple particle.
The mechanical organ may include the bar of substantially linear, the bar have anchor to the first end of the support with And it is provided with the second end of plate, the plate forms the receiving area.
In the case, a specific embodiment according to the present invention, the bar are approximately perpendicular to the support and institute It states plate and is approximately perpendicular to the bar.
A specific embodiment of disclosed opto-mechanical device according to the present invention, the mechanical organ form mechanical resonant Device, when the receiving area receives the particle or the multiple particle, the resonance frequency variation of the mechanical resonator.
First specific embodiment according to the present invention, the receiving area are designed to receive material particle.
Term " material particle " is used to refer to atom or the atom set linked by non-covalent bond, elements collection very To being a group element (especially cell or protein).
Second specific embodiment according to the present invention, the receiving area include being designed to by the electricity in preset range The material that the particle that photon in magnet rate is formed is absorbed.
Detailed description of the invention
It given below complete provide and is not limited in any way for informedness purpose by reading Embodiment example and referring concurrently to attached drawing, is better understood with the present invention, in the accompanying drawings:
Fig. 1 schematically shows the principle of opto-mechanical detection；
Fig. 2 schematically shows the couplings of NEMS and the resonance ring of light；
Fig. 3 A and Fig. 3 B schematically show the specific embodiment of device disclosed by the invention；
Fig. 4 A and Fig. 4 B schematically show the another specific embodiment of device disclosed by the invention；
Fig. 5 A to Fig. 5 J schematically shows the step of method for manufacturing device according to the present invention；And
Fig. 6 A to Fig. 6 E schematically shows the step of another method for manufacturing device according to the present invention.
Specific embodiment
According to an aspect of the present invention, near field light conversion has been used rather than electricity conversion.The principle of the conversion process exists It is schematically shown in Fig. 1.
It, should be referring to following documents about this problem:
T.J.Kippenberg's et al., 2008, Cavity optomechanics:back-action at the Mesoscale (chamber photodynamics: the reaction of meso-scale), Science (Scientific Magazine) (New York, N.Y.), 321 (5893), pp.1172-6.
Conversion process is based on (mechnical oscillator 2) mechanical freedom, and (it is to generate in such as optical cavity 4 with light freedom degree Electromagnetic field result) coupling.As can be seen, which is provided and by the laser beam 6 for passing through pellicle mirror 8 by another The flexible mirror 12 of a part of one pellicle mirror 10 and formation mechnical oscillator defines.In practice, when the displacement of flexible mirror 12 changes Above-mentioned coupling is obtained when becoming the resonant mode of chamber 4.
Appended drawing reference 13 indicates the photodetector of the phase/amplitude of the light from pellicle mirror 10.
In addition, the evanescent field of optical waveguide to the variation of surrounding medium (for example, the presence or absence of refractive index, object, relative to The distance change of the object) it is sensitive, therefore the variation of surrounding medium has influence to the circulation way of electromagnetic field.
In micro- dish-type resonant cavity with high-precision angle value, this will lead to the significant displacement of optical resonance frequency.Pass through light wave The evanescent field led is coupled to the object at resonant cavity can be in the optical resonance of the mechanical oscillation frequencies modulated resonant cavity of resonant cavity Frequency.
This conversion has been used for nanoscale, as shown in Fig. 2, by nano-machine device 14 and being coupled to optical waveguide 18 On resonant mode annular optical resonator 16 coupled.
It, should be referring to following documents about this problem:
G.Anetsberger's et al., 2009, Near-field cavity optomechanics with Nanomechanical oscillators (using the near field chamber photodynamics of mechnical oscillator is received), Nature Physics (from Right physics), 5 (12), pp.909-914.
This makes it possible to obtain the displacement resolution for being less than 1fm/Hz1/2.
This conversion also allows drive because of optical gradient forces and the complete light of mechanical resonator is therefore allowed to convert.About This problem, should be referring to Gu following documents:
M.Li's et al., 2009, Broadband all-photonic transduction of Nanocantilevers (broad band full of nanometer cantilever swashs property conversion), Nature Nanotechnology (natural nanometer skill Art), 4 (June), pp.377-382.
It is this other than a possibility that outstanding mechanical displacement Measurement Resolution, wide dynamic range and complete light operate The conversion of type also has the advantages that many other.
For example, under certain condition (close coupling, comparable smooth time constant and mechanical time constant), can be caused The bucking effect of self-vibration.The control and servo operation or to make an uproar which strongly simplifies mechanical devices under its resonance frequency Sound can be reduced.It, should be referring to following documents about this problem:
M.Hossein-zadeh's et al., 2010, An Optomechanical Oscillator on a Silicon Chip (the opto-mechanical oscillator on silicon chip), IEEE Journal of selected topics in quantum Electronics, 16 (1), pp.276-287.
In addition it is possible to use any kind of material, and be not only conductive of material.
Light belt is wide also very big, it means that (usually several girz) resonance at very high frequencies can be used The mechanical device of very small quality.It is still not achievable that this passes through electricity conversion in practice.The bandwidth also allows for pair A large amount of mechanical devices are multiplexed.
The present invention proposes to utilize these advantages.According to an aspect of the present invention, all or part of light conversion device quilt It is placed on mechanical activity lower face, especially includes one or more mechanical organs and one or more driving/detection devices, Wherein, these devices are corresponding with the optical device 21 in Fig. 3 A and Fig. 3 B.
Fig. 3 A and Fig. 3 B schematically show the example of opto-mechanical device disclosed by the invention.Fig. 3 A is bowing for the device View and Fig. 3 B are the sectional view of the section AA along Fig. 3 A.In this example, which constitutes base pixel.
The device includes the optical device 21 on support 20 and support 20, optical device 21 fixed relative to support and Including optical waveguide 22 (there may be have several optical waveguides 22 for multi-port operation) and toroidal cavity resonator 24, toroidal cavity resonator 24 Waveguide 22 is coupled to by fadout coupling and is tuned to the optical wavelength for example close to 1550nm.
It should be pointed out that Fig. 3 A and Fig. 3 B shown in device by optically coupling to the unshowned laser in waveguide 22 Lai Supply luminous energy.
A certain number of mechanical organs 26 are anchored to support 20 and are designed to move relative to support 20.Mechanical member Part 26 forms mechanical resonator.In this example, there are four resonators 26, but can have the number of single resonator and resonator Amount can be with up to tens.
Resonator 26 has resonance frequency close to each other but differing from each other.Each resonator 26 is thus in its own frequency Rate modulated luminous energy.Information in each of these frequencies therefore can be by optically coupling to the unshowned light in optical waveguide The optical output signal of detection device is demodulated to restore.
This addressing based on frequency is similar to and should carry out technology disclosed in the following documents of reference:
WO 2012/172204, Systeme de mesure à r é sonateurs é lectrom é caniques, proc édé de fabrication d’un tel système et procédé de lecture d’au moins deux ré (measuring system of electromechanical resonator makes the method for the system and at least two to sonateurs é lectrom é caniques The method that a electromechanical resonator is read out), the invention of E.Colinet et al..
Back to Fig. 3 A and Fig. 3 B, it can be appreciated that each mechanical organ 26 includes the bar 28 of substantially straight line, 28 quilt of bar It is designed to move relative to support 20.One end of bar 28 is anchored to support 20 and the other end is equipped with the plate of substantially flat shape 30, plate 30 is perpendicular to bar and forms region for receiving particle 31, wherein expectation detects and measures the object of these particles Rationality matter.These particles change the respective resonance frequency of bar.
As can be seen, bar is surrounded by annular optical resonator 24 and optical resonator 24 is located at 26 lower section of plate.
Each of these mechanical organs can be vibrated in the following manner:
With its fundamental mode (can be the bending die of vertical bar 28 for sufficiently rigid plate 30)；
Or with one in higher mode, it can be the bending die (mechanical movement in face) of vertical bar 28；
Or with extension die (in the case where plate 30 keeps rigidity vertical bar along its axis vibration)；
Or the crooked syntony mould (vertical mechanical movement) with plate 30 alone again.
In all cases, bar 28 and plate 30 must close enough optical resonator 24, usually receive away from optical resonator 24 is several hundred Rice, so as to optical resonator there is good opto-mechanical to couple.
It is uniformly distributed in the range of adding quality (that it changes the movements of bar) in plate caused by the reception because of particle 31 In the case where (such as gas detection), the single mould of each mechanical organ enables the quality of addition to be measured.
In the case where adding point mass (such as inspection of cell or simple protein), under first three operational circumstances, Single mould can be used to measure additional mass, and be different from the situation with conventional NEMS bar or the contemplated the 4th kind The situation (mould of the experience bending vibration of plate 30) of the case where operation, because frequency shift at this time additionally depends on particle to be measured Position.
The case where conventional NEMS bar and it is related to the quantity of mould required for quantified additional to point mass The case where should be referring to following documents:
M.S.Hanay et al., 2012, Single-protein nanomechanical mass spectrometry in Real time (simple protein receive in real time mechanical mass spectral analysis), Nature Nanotechnology, 7 (Septembers), pp.602- 608。
It is also contemplated that using type shown by Fig. 3 A and Fig. 3 B but without the arrangement of optical resonator.In such case Under, mechanical resonator 26 must be placed along waveguide 22.Mechanical resonator 26 does not modulate optical resonance frequency: mechanical resonator then The luminous energy that 26 modulation are projected by waveguide 22.The corresponding resonance frequency of mechanical resonator 26 must be mutually different again.
On the other hand, in the case where mechanical structure is not resonance, mechanical structure changes the luminous energy or optical resonator projected Frequency, this change is measured to establish the static state or quail-static displacement of mechanical structure.
With the opto-mechanical device of same type shown in Fig. 3 A and Fig. 3 B make extremely lightweight and therefore to addition The very sensitive mechanical resonator to be directed at high-frequency resonance of quality can be used.In addition, being shown in Fig. 3 A and Fig. 3 B The use of pixel of type directly enable to be addressed various mechanical resonators that required port number is reduced.
In addition, the device of the type shown in these Fig. 3 A and 3B allows this pixel to be installed into along single waveguide Tandem, and allow to be formed the very intensive array including a large amount of mechanical resonators, so that it is minimal number of to have component Input terminal/output end.It is this to significantly reduce the needs of interconnection.In this case, optical resonator is adjusted to mutually respectively Slightly different wavelength, so that each of these resonators be allowed to be addressed by specific optical wavelength.All these letters It number is sent in same waveguide and at the same time the output in the waveguide is demodulated.
The single mechanical resonator for covering entire optical resonator can be used only, and the mechanical resonator includes example thus Such as film.However, needing minimum diameter (usually 10 μm), thus for optical resonator to ensure excellent tuned mass. Generated mechanical devices have large scale, and this reduce the sensibility to addition quality, except non-device is ultra-thin and elongated 's.
Fig. 4 A and Fig. 4 B schematically show the example of pixel, the pixel include for optical resonator single machinery it is humorous Shake device.Fig. 4 A is the top view of pixel, and Fig. 4 B is the sectional view along the section AA cutting of Fig. 4 A.
It can again be seen that the support 20 of carrying optical waveguide 22 and annular optical resonator 24.Form the element of mechanical resonator 44 is associated with optical resonator 24 and including film 46, and film 46 covers entire resonator 24 and is shelved on by pillar 48 On support 20.In the illustrated example, film is substantially square form and pillar is located at four of the square and turns At angle, as can see in Figure 4 A.
In the examples described above, for simplicity, it is implicitly assumed that the driving element and this yuan of each mechanical organ The detection device of the variation of the displacement frequency of part is all optical system.
However, driving element be also possible to it is external and for example real by vibration piezoelectric element (or piezoelectric vibrator) It is existing, or can be DYN dynamic such as electrostatic (by close to mechanical resonator, such as in the substrate for constituting support 20 Doped region in place electrode), or using being formed in and conducting electrode at mechanical resonator same position is realized.
In addition, being given above example of the invention is related to the detection of weight measurement.However, the present invention is not limited to one this The application of sample: (or static displacement) detection based on frequency that present invention can also apply to any kind of, such as in Terahertz In imaging or bolometer field.
In this case, the plate 30 in Fig. 3 A and Fig. 3 B and the film 46 in Fig. 4 A and Fig. 4 B can be covered with or very To being made of single piece of material 49 (Fig. 4 B), material 49 absorbs the photon P in studied EM frequencies.For example, In the case where infra-red radiation for bolometer, which can be titanium.
The manufacture of device according to the present invention will be considered below.
Waveguide can be formed on rigid mount by silicon or silicon nitride, such as be made of plate silicon.Photon can also be returned Road makes on flexible substrates, and wherein optical waveguide is made of polymer.
The MEMS or NEMS that may be used in the present invention can be made or by even of silicon, silicon nitride, silica, silicon carbide Any other material of polymer is made, and mounting structure is preferably made of silicon, silicon nitride or silicon carbide.
I. the first example (Fig. 5 A to Fig. 5 J) of manufacturing method
I.1 the manufacture (Fig. 5 A) of photon chip
The starting point for manufacturing the device is buried oxide (BOX) plate 50, and plate 50 includes that a layer thickness on silicon substrate 54 is The silica 52 of 200nm.The plate 50 is constructed to obtain desired photon circuit (standard procedure).Each waveguide 56 is by silicon It is made and is of approximately such as 100 × 100nm2To 500 × 500nm2Cross section.Each annular optical resonator 58 has Internal diameter, about 200 to 500nm width and the thickness of about 200nm to 500nm about from 5 μm to 20 μm.Inside chip The typical length of waveguide is from 100 μm to several millimeters.
About this problem, following documents should be see, for example:
US 2012/0063717,Method of producing a photonic device and The invention of corresponding photonic device, Laurent Grenouillet et al..
US2010/0265504,Optical device with superimposed photonic circuits for The invention of coupling to one or more optical waveguides, Christophe Kopp et al..
I.2 prepare/protect chip (Fig. 5 B and Fig. 5 C)
The oxide 60 of a thin layer is for example deposited using PECVD to protect the optical waveguide being made of silicon.The layer 60 has Such as the thickness of 10nm.
Then, depth is more than that the sacrificial layer 62 of the polysilicon of 500nm is deposited.The depth is such as 550nm so as to most There are the spaces of 50nm between used MEMS or NEMS and waveguide when discharging afterwards.It (alternatively, can be by HfO2Erosion Carve trapping layer be deposited directly in waveguide, or deposit to several nanometers before deposit silica on, then carry out such as 500nm Silica deposition, will be used as the sacrificial layer discharged using hydrofluoric acid).
Then, using the last thin oxide layer 64 with a thickness of 10nm of PECVD deposition, (this step is unsuitable for above-mentioned alternative Case).
The surface of thus obtained structure 66 is leveled and is cleaned so that it prepares for bonding.Layer 64 is constructing It is used as trapping layer during MEMS or NEMS.
I.3 MEMS or NEMS layers (Fig. 5 D to Fig. 5 F) on upper layer, future are bonded.
SOI formula including 500 μm of pedestal silicon 70, the top silicon 74 of the buried oxide BOX 72 of 400nm and 200nm Chip 68 is glued to the surface of the photon chip formed by structure 66.The bonding of chip 66 and 68 for example bonds skill by molecule Art is realized.It should be noted that replacing SOI formula chip, it can be used and be thinned and be then leveled until obtaining desired thickness The silicon wafer of degree.
The structure of generation then passes through the silicon 70 (that is, 500 μm) for removing whole thickness and ends at buried oxide (BOX) it is thinned.
Then, buried oxide 72 be removed (Fig. 5 F) and top silicon 74 be leveled with obtain about from 200nm to The desired thickness of 10nm.The stacked group with two chips of silicon/oxide interface is obtained as a result,.In this way in construction NEMS Or between MEMS, the configuration of SOI: top silicon/10nm oxide/550nm polysilicon of 200nm thereby is achieved.
I.4 it is configured to MEMS or NEMS array (Fig. 5 G to Fig. 5 I)
Conventional active ion corrosion (RIE) photoetching/etching step is executed to construct MEMS or NEMS (ginseng in silicon layer 74 See the paper of E.Mile for example above quoted et al.).Then the step ends at the oxide skin(coating) 62 of 10nm thickness.(however, In above-mentioned alternative solution, which directly ends at the silica of the 550nm as sacrificial layer).
Then (Fig. 5 I), MEMS or NEMS by correspondingly oxidation be more than such as 10nm thickness, so as to discharge silicon be made Sacrificial layer during protect these MEMS or NEMS structures.The oxide layer of generation has appended drawing reference 76.(in above-mentioned alternative solution In the step be unnecessary).
MEMS or NEMS array will have the surface area smaller than photon circuit, to leave sky to introduce light by optical fiber Between.
Then, photoetching is executed on the region that must be released using RIE (anisotropic etching), is followed by oxide It etches (10nm+10nm) (step is unnecessary in above-mentioned alternative solution).
I.5 movable structure (Fig. 5 J) is discharged
MEMS or NEMS structure is released by using the isotropic etching of the XeF2 polysilicon carried out.It (is replaced above-mentioned For in scheme, having used another method: release use hydrofluoric acid, by the silica of etching 550nm and by HfO2On It carries out preventing to be performed).
Finally, obtain MEMS the or NEMS structure of suspension, the structure by 10nm oxide/200nm to 50nm silicon/ The oxide of 20nm is covered with oxide of a layer thickness between 5nm and 10nm and the above-mentioned silicon wave for example equal to 10nm Lead composition.
II. the second example (Fig. 6 A to Fig. 6 E) of manufacturing method
Between second example and the first example is not both due to will be on MEMS or NEMS wafer bonding to photon chip Keep profile (being bonded on cavity) simultaneously.
Photon circuit keeps identical.However, design exemplary for second, should advantageously provide big bonding surface.One A chip is for example bonded directly on another chip by molecule bonding technology.Support the chip of the MEMS or NEMS in future It is made of silicon and is coated with oxide, which will constitute both bonding interface and sacrificial layer.
Fig. 6 A shows the chip 80 of carrying waveguide 82 and the ring of light 84.Waveguide 82 and the ring of light 84 rest on included by chip 80 Silica layer 86 on.It can also be seen that the bonding surface 88 for bond wafer.
It can also be seen that the chip 90 being made of silicon.Chip 90 has the superficial layer 92 of silica, and the superficial layer 92 of silica is logical Cross the thickness that PECVD is obtained and is of approximately such as 10nm to 500nm.The layer 92 will act as sacrificial layer, so that light be arranged Interval between resonator and MEMS or NEMS structure.
Fig. 6 B shows the chip 80 and 90 being bonded to one another.The layer 92 of chip 90 be glued to chip 80 in fig. 6 It is 88 surface in appended drawing reference.
Then (Fig. 6 C), chip 90 are thinned by physical chemistry grinding, execute last leveling (polishing) then to obtain Obtain the desired thickness between 10nm and 200nm.
MEMS or NEMS then passes through photoetching/etching and is constructed out (Fig. 6 D).Appended drawing reference 94 correspond to the MEMS or The NEMS and appended drawing reference 96 correspond to its mechanical support.
Then, institute's some need (Fig. 6 E) is for example to execute release by HF vapor etch.In the illustrated example, in light The oxide occurred below sub-loop will be subjected to some etchings in deenergized period.This can be controlled by different modes: sacrificial Oxide in domestic animal layer is smaller than the density for being placed in the thermal oxide below photon circuit and therefore than being placed in below photon circuit Thermal oxide etches faster.The earlier anisotropic etching of Si oxide can also be executed to limit HF isotropic etching Time.
III. the third example of manufacturing method
From the viewpoint of manufacturing method, standard " photon circuit on silicon " and " MEMS or NEMS on silicon " method can With combination:
Base portion chip can be SOI wafer, including for example with a thickness of the top layer of 220nm and with a thickness of 2 μm of BOX layer.
- the first photoetching/etch cycle allows waveguide and optical resonator and coupling array to be built in the top layer of SOI wafer Mould, coupling array are needed for connecting with optical fiber, and fiber design is at being connected to laser for opto-mechanical device and couple To the device of light detection.
Then the SiO for example with a thickness of 500nm is executed2Deposition.
Then, it is performed using the leveling of chemically mechanical polishing (CMP), prevents the CMP to limit optical resonator and machine Vertical optical interval between tool resonator.
Then, one layer of HfO of such as thickness with 20nm is deposited2Trapping layer, to ensure that the release of mechanical structure will not Lead to the release of light guide and optical resonator.
Photoetching/etching is executed to disconnect trapping layer/oxide stacked group and build to the anchoring of the mechanical structure in future Mould.
Wish that form the material layer of mechanical structure is deposited.The material layer is the more of such as one layer thickness with 100nm Crystal silicon.
The opto-mechanical device according to the present invention being described referring to Fig. 3 A, Fig. 3 B and Fig. 4 A, Fig. 4 B includes constituting resonance The mechanical organ of device.However, the present invention is not limited to such situations: opto-mechanical device according to the present invention can be used one or More disresonance mechanical organs, such as in order to detect the power of such as cell power.In this case, opto-mechanical device does not use For driving the device of mechanical organ or multiple element, using only (logical for detecting element or the device of the displacement of multiple element It crosses using light wave, as can be hereinbefore seen).
In addition, particularly referring to Fig. 3 B and Fig. 4 B, it should be noted that the mechanical organ of device according to the present invention can be with With perpendicular to made by the device in layer plane element, the element have anchors to support possessed by the device End and the end that can be moved in the plane for being parallel to this layer, or the element with the plane for being parallel to this layer, this yuan Part suspends relative to support via at least end and can be perpendicular to the plane motion of this layer.

Claims (11)

1. a kind of opto-mechanical device, comprising:
Support, and included on the support
At least one mechanical organ, at least one described mechanical organ are anchored to the support and including being designed to opposite In the part of the support movement, and
For drive the part and/or the part for detecting the mechanical organ of the mechanical organ movement or The device of the variation of motion frequency, wherein the driving and/or detection device include the optics device fixed relative to the support Part,
The optical device includes at least one optical waveguide and optical resonator, the optical resonator optically coupling to the optical waveguide, Wherein, at least one described optical waveguide and the optical resonator are fixed both relative to the support,
The optical device away from the mechanical organ determine distance at, in the part and the branch of the mechanical organ The entirety of the part of the mechanical organ or the lower section of a part are disposed between seat,
And the optical device is designed to propagate at least one the light wave with setted wavelength, the light wave be designed to The mechanical organ interaction,
And wherein, the optical device is located at the distance determined away from the mechanical organ, so that the optical device is gradually Die field and the mechanical organ interacts,
Wherein, the mechanical organ includes the receiving area for being designed to receive one or more particles, one or more of Particle can cause or change the movement of the mechanical organ, described in it will pass through and determined as the signal that the detection device provides The physical property of one or more particles.
2. opto-mechanical device according to claim 1, wherein the mechanical organ has made with the opto-mechanical device The vertical element of the plane for the layer made in, the vertical element have anchor to the support one end and can with it is described The one end moved in the parallel plane of the plane of layer, or with the element parallel with the plane of the layer, the parallel member Part suspends relative to the support by least both ends and can be with the plane vertical ground motion of the layer.
3. opto-mechanical device according to claim 1, wherein the mechanical organ is formd with given resonance frequency Mechanical resonator.
4. opto-mechanical device according to claim 1, wherein the quantity of the optical device is less than or equal to the machinery The quantity of element.
5. opto-mechanical device according to claim 3, an optical device including each mechanical organ or it to be used for one group One optical device of the mechanical organ with mutually different resonance frequency.
6. opto-mechanical device according to claim 1, wherein the optical resonator is in the form of ring.
7. opto-mechanical device according to claim 1, wherein the mechanical organ includes linear bar, the bar tool The second end for having the first end for anchoring to the support and being provided with plate, the plate form the receiving area.
8. opto-mechanical device according to claim 7, wherein the bar perpendicular to the support and the plate perpendicular to The bar.
9. opto-mechanical device according to claim 1, wherein the mechanical organ forms mechanical resonator, connects when described When receiving the region one or more of particles of reception, the resonance frequency variation of the mechanical resonator.
10. opto-mechanical device according to claim 1, wherein the receiving area is designed to receive material particle.
11. opto-mechanical device according to claim 1, wherein the receiving area includes being designed to by predetermined The material that the particle that photon in the electromagnetic frequency of range is formed is absorbed.
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Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10132957B2 (en) * 2013-10-22 2018-11-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optomechanical device for actuating and/or detecting movement of a mechanical element, in particular for gravimetric detection
FR3012124B1 (en) * 2013-10-22 2017-12-15 Commissariat Energie Atomique ELECTROMECHANICAL DETECTION DEVICE FOR GRAVITY DETECTION AND DEVICE MANUFACTURING METHOD
US9454061B1 (en) * 2015-12-17 2016-09-27 International Business Machines Corporation Quantum coherent microwave to optical conversion scheme employing a mechanical element and a squid
FR3046153A1 (en) 2015-12-24 2017-06-30 Commissariat Energie Atomique SYSTEM HAVING SURFACE DENSITY OF INCREASED MICROELECTROMECHANICAL AND / OR NANOELECTROMECHANICAL DEVICES
FR3073954B1 (en) * 2017-11-20 2019-12-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives SYSTEM FOR TRANSDUCING A DISPLACEMENT INTO AN OPTICAL PHASE.
EP3715826B1 (en) * 2019-03-26 2024-03-06 Infineon Technologies AG Sensor device, particle sensor device and method for detecting a particulate matter density
US11747512B1 (en) * 2019-08-23 2023-09-05 Hrl Laboratories, Llc Phononic comb enhanced MEMS gravity gradiometers
US11656241B2 (en) * 2020-02-12 2023-05-23 Southern Methodist University Micro-fabricated optical motion sensor
US12164150B2 (en) * 2020-07-10 2024-12-10 Cisco Technology, Inc. Optical waveguide passivation for moisture protection
FR3124592B1 (en) 2021-06-25 2023-05-19 Commissariat Energie Atomique Multi-sensor MEMS or NEMS type measurement system
US12160240B2 (en) 2022-07-29 2024-12-03 Hrl Laboratories, Llc Method and system for generating phononic frequency comb
GB2632646A (en) * 2023-08-10 2025-02-19 Zero Point Motion Ltd Structure including mechanical and photonic features

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909824B1 (en) * 2002-03-05 2005-06-21 Avi Messica Mechanically actuated evanescent-wave coupled optical devices
CN101782533A (en) * 2010-01-28 2010-07-21 武汉康普常青软件技术有限公司 laser pollution sensor
CN102483422A (en) * 2009-06-01 2012-05-30 康奈尔大学 Integrated optofluidic system using microspheres
US8483522B2 (en) * 2008-09-24 2013-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optical modulator, integrated optical circuit, and method for modulating an optical signal

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737499C3 (en) * 1977-08-19 1981-10-22 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Fiber optic circuit element
US5162691A (en) * 1991-01-22 1992-11-10 The United States Of America As Represented By The Secretary Of The Army Cantilevered air-gap type thin film piezoelectric resonator
KR0180972B1 (en) * 1995-06-28 1999-05-15 윤덕용 Optical coupler sensor made of optical waveguide and manufacturing method thereof
JP3257510B2 (en) * 1998-05-29 2002-02-18 日本電気株式会社 Optical device
WO2000050938A1 (en) * 1999-02-22 2000-08-31 Massachusetts Institute Of Technology Vertically coupled optical resonator devices over a cross-grid waveguide architecture
US6385363B1 (en) * 1999-03-26 2002-05-07 U.T. Battelle Llc Photo-induced micro-mechanical optical switch
US6392233B1 (en) * 2000-08-10 2002-05-21 Sarnoff Corporation Optomechanical radiant energy detector
US6658176B2 (en) * 2000-09-29 2003-12-02 Sarnoff Corporation Optical switch using movable micromechanical cantilevers and evanescent coupling
US6970619B2 (en) * 2001-05-21 2005-11-29 Lucent Technologies Inc. Mechanically tunable optical devices such as interferometers
US6668111B2 (en) * 2001-06-28 2003-12-23 The Charles Stark Draper Laboratory Optical microcavity resonator sensor
US7031563B2 (en) * 2003-05-06 2006-04-18 Intel Corporation Optical clocking with a ring resonator
US8280214B2 (en) * 2004-05-13 2012-10-02 The Regents Of The University Of California Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices
US7271379B2 (en) * 2004-05-27 2007-09-18 3M Innovative Properties Company Dielectric microcavity fluorosensors excited with a broadband light source
US7285736B2 (en) * 2004-10-21 2007-10-23 David Michael Korpi Oscillating Inertial Microbalance and Method of Passive Compensation
US7120332B1 (en) * 2005-03-31 2006-10-10 Eastman Kodak Company Placement of lumiphores within a light emitting resonator in a visual display with electro-optical addressing architecture
GB0509113D0 (en) * 2005-05-04 2005-06-08 Sensor Technology Ltd Measuring physical quantities resonant structures
US7310459B1 (en) * 2005-10-25 2007-12-18 Xilinx, Inc. On-chip programmable optical crossbar switch
WO2007051170A2 (en) * 2005-10-28 2007-05-03 The Regents Of The University Of California Apparatus and method for improved optical detection of particles in fluid
US7336859B2 (en) * 2005-12-28 2008-02-26 Honeywell International, Inc. Sensor using ultra thin waveguides and optical fibers
US7532790B2 (en) * 2006-03-29 2009-05-12 3M Innovative Properties Company Method of coupling light into microresonators
US8115937B2 (en) * 2006-08-16 2012-02-14 Davidson Instruments Methods and apparatus for measuring multiple Fabry-Perot gaps
US7474810B2 (en) * 2007-05-15 2009-01-06 Hewlett-Packard Development Company, L.P. Method and apparatus for controlling light flux with sub-micron plasmon waveguides
US7751655B2 (en) * 2007-07-27 2010-07-06 Hewlett-Packard Development Company, L.P. Micro-ring optical detector/modulator
FR2922031B1 (en) 2007-10-03 2011-07-29 Commissariat Energie Atomique OPTICAL DEVICE WITH SUPERPOSED PHOTONIC CIRCUITS FOR COUPLING WITH ONE OR MORE OPTICAL GUIDES.
US8009943B2 (en) * 2007-10-31 2011-08-30 Hewlett-Packard Development Company, L.P. Magnetically activated photonic switches and switch fabrics employing the same
WO2009059182A1 (en) * 2007-10-31 2009-05-07 Massachusetts Institute Of Technology Controlling optical resonances via optically induced potentials
US8542960B2 (en) * 2008-03-19 2013-09-24 Hewlett-Packard Development Company, L.P. Tunable ring resonator
US9008467B2 (en) * 2008-03-20 2015-04-14 Hewlett-Packard Development Company, L.P. Nanoparticle-based quantum confined stark effect modulator
US8179935B2 (en) * 2008-04-01 2012-05-15 Hewlett-Packard Development Company, L.P. Tunable optical resonator
US8009937B2 (en) * 2008-04-18 2011-08-30 Hewlett-Packard Development Company, L.P. Charge-based memory cell for optical resonator tuning
EP2214042B1 (en) * 2009-02-02 2015-03-11 Commissariat à l'Énergie Atomique et aux Énergies Alternatives Method of producing a photonic device and corresponding photonic device
WO2010104993A2 (en) * 2009-03-10 2010-09-16 The Regents Of The University Of California Fluidic flow cytometry devices and particle sensing based on signal-encoding
US9645010B2 (en) * 2009-03-10 2017-05-09 The Regents Of The University Of California Fluidic flow cytometry devices and methods
WO2010111229A1 (en) * 2009-03-23 2010-09-30 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Optical mems chemical sensor array
FR2946479A1 (en) * 2009-06-09 2010-12-10 Commissariat Energie Atomique ELECTROMECHANICAL RESONATOR WITH RESONANT ANCHORING.
US8265433B2 (en) * 2010-04-14 2012-09-11 Oracle America, Inc. Low-power, broadband optical switch
FR2964653B1 (en) * 2010-09-13 2012-10-12 Commissariat Energie Atomique PLAN-OPERATING DEVICE AND METHOD OF MANUFACTURING THE DEVICE
FR2964652B1 (en) 2010-09-13 2015-05-15 Commissariat Energie Atomique RESONANT DEVICE WITH PIEZORESISTIVE DETECTION AND RESONATOR RELATED ELASTICALLY TO THE SUPPORT OF THE DEVICE, AND METHOD OF MANUFACTURING THE SAME
FR2964651B1 (en) * 2010-09-13 2015-05-15 Commissariat Energie Atomique SUSPENDED BEAM DEVICE AND MEANS FOR THE PIEZORESISTIVE DETECTION OF THE DISPLACEMENT THEREOF, AND METHOD FOR MANUFACTURING THE DEVICE
US8925385B2 (en) * 2010-12-06 2015-01-06 Sierra Instruments, Inc. Longitudinal resonating mode inertial mass sensing systems
FR2973504B1 (en) * 2011-03-31 2014-01-10 Commissariat Energie Atomique ELECTROMECHANICAL RESONATOR MEASURING SYSTEM, METHOD FOR MANUFACTURING SUCH A SYSTEM, AND METHOD FOR READING AT LEAST TWO ELECTROMECHANICAL RESONATORS
WO2013052953A1 (en) * 2011-10-08 2013-04-11 Cornell University Optomechanical sensors based on coupling between two optical cavities
US9684127B2 (en) * 2012-03-02 2017-06-20 Purdue Research Foundation Passive optical diode on semiconductor substrate
FR3003083B1 (en) * 2013-03-11 2015-04-10 Commissariat Energie Atomique DEVICE FOR DETERMINING THE MASS OF A PARTICLE IN SUSPENSION OR SOLUTION IN A FLUID
WO2015059511A1 (en) * 2013-10-22 2015-04-30 Commissariat à l'énergie atomique et aux énergies alternatives Optomechanical device with mechanical elements and optical filters for actuating and/or detecting the movement of the elements
US10132957B2 (en) * 2013-10-22 2018-11-20 Commissariat A L'energie Atomique Et Aux Energies Alternatives Optomechanical device for actuating and/or detecting movement of a mechanical element, in particular for gravimetric detection
US9395177B2 (en) * 2013-11-14 2016-07-19 The United States Of America, As Represented By The Secretary Of The Navy Evanescent field opto-mechanical phase shifter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6909824B1 (en) * 2002-03-05 2005-06-21 Avi Messica Mechanically actuated evanescent-wave coupled optical devices
US8483522B2 (en) * 2008-09-24 2013-07-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Optical modulator, integrated optical circuit, and method for modulating an optical signal
CN102483422A (en) * 2009-06-01 2012-05-30 康奈尔大学 Integrated optofluidic system using microspheres
CN101782533A (en) * 2010-01-28 2010-07-21 武汉康普常青软件技术有限公司 laser pollution sensor

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
A microelectromechanically controlled cavity optomechanical sensing system;Houxun Miao等;《Lasers and Electro-optics(CLEO),2012 Conference on》;20120511;1-17
Design of MOEM Vibration Sensor Using Optical MicroRing Resonator and MicroCantilever Beam;Rekha R等;《TENCON 2011-2011 IEEE Region 10 Conference》;20120112;747-751
Integrated Resonant Optical Readout Applicable to Large Arrays of MEMS Beams;Gino Putrino等;《IEEE PHOTONICS TECHNOLOGY LETTERS》;20121015;第24卷(第24期);2243-2246
Micromechanically Tuned Ring Resonator in Silicon on Insulator;L.J.Kauppinen等;《Quantum Electronics Conference & Lasers and Electro-Optics(CLEO/IQEC/PACIFIC RIM),2011》;20110901;682-684
Read-Out of Cantilever Bending With a Grated Waveguide Optical Cavity;S.V.Pham;《IEEE PHOTONICS TECHNOLOGY LETTERS》;20110215;第23卷(第4期);215-217

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