CN104576455A - Device for cleaning black silicon cell piece - Google Patents

Abstract

The invention discloses a device for cleaning black silicon cells, which comprises a metal working tank, a crucible and an ultrasonic generator. The crucible is located inside the cubic metal working tank, and a plurality of ultrasonic generators are arranged at the bottom of the metal working tank; There is a gap between the metal working tank and the crucible; the nitric acid solution is contained in the crucible for cleaning the black silicon battery; the invention provides a cleaning black silicon battery that avoids metal residue and ensures the electrical performance of the black silicon battery. Cell device.

Description

A device for cleaning black silicon cells

technical field

The invention relates to the field of photovoltaic cell manufacturing, in particular to a device for cleaning black silicon cells.

Background technique

The conventional cleaning of black silicon cells after texturing is to soak the black silicon only with nitric acid. The reaction between silver and nitric acid is relatively slow and weak. Even if soaked for tens of minutes, it is still impossible to ensure that there are no residues of the attached nano-metal particles. If the cleaning effect is not Ideally, when there are metal residues on the surface, it will cause serious Auger recombination, which will directly affect the electrical performance of black silicon cells and reduce the conversion efficiency.

Contents of the invention

Purpose of the invention: Aiming at the deficiencies in the prior art, the present invention provides a device for cleaning black silicon cells that avoids metal residues and ensures the electrical properties of the black silicon cells.

Technical solution: A device for cleaning black silicon cells, including a metal working tank, a crucible and an ultrasonic generator, the crucible is located inside a cuboid metal working tank; multiple ultrasonic generators are arranged at the bottom of the metal working tank; There is a gap between the metal working tank and the crucible.

Specifically, there are at least four ultrasonic generators, and the high-frequency electric energy is converted into ultrasonic waves through the ultrasonic generators.

Specifically, a nitric acid solution is contained in the crucible for cleaning the black silicon cells.

Specifically, a plurality of silicon wafer carrying boxes are placed inside the crucible.

More specifically, a gap is provided between the crucible and the silicon wafer carrying box.

More specifically, the silicon wafer carrying box is completely submerged in the nitric acid cleaning solution.

Specifically, there are at least four silicon wafer carrying boxes.

Specifically, water is contained in the metal working tank as an ultrasonic transmission medium, so as to maintain good conduction of ultrasonic waves between the crucible and the metal working tank.

Specifically, the shell of the metal working tank is a stainless steel shell.

Beneficial effects: Compared with the prior art, the device for cleaning black silicon cells provided by the present invention uses ultrasonic waves to physically impact the nano-metal particles on the surface of the silicon chips to make them flow out of the nano-deep pits, and at the same time cooperate with Soaking and cleaning in nitric acid accelerates the chemical reaction, avoids metal residues, and ensures the electrical performance of the black silicon battery.

Description of drawings

Fig. 1 is a side structural view of the present invention;

Figure 2 is a top view of the present invention.

Detailed ways

The present invention will be further explained below in conjunction with the accompanying drawings and specific embodiments.

As shown in Figure 1-2, a device for cleaning black silicon cells includes a metal working tank 1, a crucible 2, a silicon wafer carrying box 3 and an ultrasonic generator 5. The shape of the metal working tank 1 is a cube, and the outer shell is a metal shell. , the bottom is provided with a plurality of ultrasonic generators 5, through which the high frequency electric energy is converted into mechanical vibration, the crucible 2 is located on the bottom 7 of the metal working tank 1, and there is a gap between the metal working tank 1 and the crucible 2 , used to inject pure water; at least four silicon wafer carrying boxes 3 can be placed inside the crucible 2, a gap is provided between the crucible 2 and the silicon wafer carrying box 3, and a gap is provided between the silicon wafer carrying boxes 3 for injection Solution; the silicon chip carrying box 3 is provided with several grooves for placing black silicon battery chips 4 .

The height of the metal working tank 1 is 40cm, and the length is 76cm; the height of the crucible 2 is 35 cm, and the length is 70cm, and the length of the silicon wafer carrying box 3 is 30cm, so the height of the metal working tank 1 is greater than the height of the crucible 2, and the length of the metal working tank 1 greater than the length of the crucible 2, the length of the crucible 2 is greater than the length of the silicon wafer carrying box 3, and the length of the crucible 2 is greater than the length of the two silicon wafer carrying boxes 3.

The silicon wafer carrying box 3 filled with textured black silicon cells is first placed in the crucible 2, then the nitric acid solution is injected into the crucible 2, and then pure water is injected into the gap between the metal working tank 1 and the crucible 2, Turn on the ultrasonic cleaner 5 and perform ultrasonic cleaning for 20 minutes. After the end, take out the silicon wafer carrier box 3 and then take out the black silicon cell 4 .

Working principle: Utilize the 50Hz alternating-frequency current emitted by the metal working tank, which is converted into alternating-frequency mechanical oscillation by the ultrasonic generator 5 and propagated into the medium nitric acid cleaning solution. The form radiates to the object to be washed, so that the dirt in the surface, hole and gap of the black silicon cell 4 is dispersed, broken and peeled off to achieve purification and cleanliness.

The present invention combines physical methods to ultrasonically clean the surface of the black silicon cell 4, strengthens the vibration of the silver particles in the deep pit to make it fall out of the pit structure, increases the contact between impurities and nitric acid solution, strengthens the cleaning, and improves the cleaning of the black silicon cell 4 Effect.

Claims (9)

1. A device for cleaning black silicon cells, characterized in that it includes a metal working tank (1), a crucible (2) and an ultrasonic generator (5), and the crucible (2) is located in a cuboid metal working tank (1) Inside; the bottom of the metal working tank (1) is provided with a plurality of ultrasonic generators (5); a gap is provided between the metal working tank (1) and the crucible (2). 2. A device for cleaning black silicon cells according to claim 1, characterized in that there are at least four ultrasonic generators (5). 3 . The device for cleaning black silicon cells according to claim 1 , characterized in that: the crucible ( 2 ) contains nitric acid solution for cleaning the black silicon cells ( 4 ). 4 . 4. The device for cleaning black silicon solar cells according to claim 1, characterized in that: multiple silicon wafer carrying boxes (3) can be placed inside the crucible (2). 5. The device for cleaning black silicon solar cells according to claim 1 or 4, characterized in that there is a gap between the crucible (2) and the silicon wafer carrying box (3). 6 . The device for cleaning black silicon cells according to claim 4 , characterized in that: the silicon chip carrying box ( 3 ) is completely submerged in the nitric acid cleaning solution. 7 . 7. The device for cleaning black silicon solar cells according to claim 1, characterized in that there are at least four silicon wafer carrying boxes (3). 8. The device for cleaning black silicon cells according to claim 1, characterized in that: the metal working tank (1) holds water as the ultrasonic wave conduction medium. 9. A device for cleaning black silicon cells according to claim 1, characterized in that: the shell of the metal working tank (1) is a stainless steel shell.