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CN104506141A - Band-pass filtering oscillating system based on linear driving - Google Patents

Band-pass filtering oscillating system based on linear driving Download PDF

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Publication number
CN104506141A
CN104506141A CN201410714737.XA CN201410714737A CN104506141A CN 104506141 A CN104506141 A CN 104506141A CN 201410714737 A CN201410714737 A CN 201410714737A CN 104506141 A CN104506141 A CN 104506141A
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China
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pin
triode
resistance
chip
electric capacity
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CN201410714737.XA
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Chinese (zh)
Inventor
何梅
谢彬
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Chengdu Simao Technology Co Ltd
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Chengdu Simao Technology Co Ltd
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Priority to CN201410714737.XA priority Critical patent/CN104506141A/en
Publication of CN104506141A publication Critical patent/CN104506141A/en
Priority to CN201510323551.6A priority patent/CN104967408A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a band-pass filtering oscillating system based on linear driving. The band-pass filtering oscillating system mainly comprises a signal transform circuit, a signal amplification circuit connected with the signal transform circuit, a band-pass filtering circuit connected with the signal amplification circuit, and a buffer circuit connected with the band-pass filtering circuit; and the band-pass filtering oscillating system is characterized in that a linear driving circuit is also arranged between the signal transform circuit and the signal amplification circuit, the linear driving circuit comprises a driving chip U, an audion VT2, an audion VT3, an audion VT4, an audion VT5, and a polar capacitor C10 and so on, wherein the anode of the polar capacitor C10 is connected with the signal transform circuit, and the cathode of the polar capacitor C10 is connected with a resistor R18 and then is connected with an IN1 tube pin of the driving chip U. Due to adoption of the linear driving circuit, the sensitivity of the oscillating system can be improved greatly.

Description

Based on the bandpass filtering oscillatory system of Linear Driving
Technical field
The present invention relates to a kind of system, specifically refer to the bandpass filtering oscillatory system based on Linear Driving.
Background technology
Along with the development of electronic technology, oscillator is more and more extensive as producing the electronic component application repeating electric signal (normally sinusoidal wave or square wave).Its kind is a lot, can be divided into self-excited oscillator, driven oscillator by vibratory stimulation mode; Resistance-capacitance oscillator, LC oscillator, crystal oscillator, fork generator etc. can be divided into by circuit structure; The oscillators such as sine wave, square wave, sawtooth waveforms can be divided into by output waveform.Be widely used in the aspects such as electronics industry, medical treatment, scientific research at present.
Current oscilator system is provided with and allows the ripple of special frequency channel to pass through, and shields the filter circuit of other frequency ranges simultaneously.But its filter circuit sensitivity is low, this provides for improved the distortion factor of oscillatory system.
Summary of the invention
The object of the invention is to solve the low defect of current oscillatory system filtering sensitivity, the bandpass filtering oscillatory system based on Linear Driving that a kind of filtering is highly sensitive is provided.
Object of the present invention is by following technical proposals reality: based on the bandpass filtering oscillatory system of Linear Driving, primarily of signal conversion circuit, the signal amplification circuit be connected with signal conversion circuit, the bandwidth-limited circuit be connected with signal amplification circuit, the buffer circuit be connected with bandwidth-limited circuit forms, between signal conversion circuit and signal amplification circuit, be also provided with linear drive circuit, described linear drive circuit is by driving chip U, triode VT2, triode VT3, triode VT4, triode VT5, positive pole is connected with signal conversion circuit, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U after resistance R18, one end is connected with the collector electrode of triode VT5, the resistance R19 that the other end is connected with the base stage of triode VT3 after resistance R20, positive pole is connected with the base stage of triode VT5, the polar capacitor C11 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C12 of minus earth, one end is connected with the emitter of triode VT5, the resistance R22 that the other end is connected with the base stage of triode VT2, one end is connected with the base stage of triode VT2, the resistance R21 that the other end is connected with the base stage of triode VT3, N pole is connected with the collector electrode of triode VT5, the diode D1 that P pole is connected with the collector electrode of triode VT2, positive terminal is connected with the collector electrode of triode VT5, the not gate K that end of oppisite phase is connected with triode VT4 collector electrode, one end is connected with triode VT4 emitter, the resistance R24 that the other end is connected with the emitter of triode VT3 after resistance R23, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R24 with resistance R23 forms, the VCC pin of described driving chip U is connected with the base stage of triode VT5, END pin ground connection, OUT pin are connected with the collector electrode of triode VT2, the collector electrode of triode VT2 is also connected with the base stage of triode VT4, its emitter is connected with the base stage of triode man VT3, the grounded collector of triode VT3, the N pole of diode D2 is connected with signal amplification circuit.
Described signal conversion circuit is by conversion chip K1, transformer T1, be serially connected in the electric capacity C1 between transformer T1 secondary Same Name of Ends and non-same polarity, the electric capacity C2 be in parallel with electric capacity C1, collector electrode is connected with the OSC1 pin of conversion chip K1, emitter is connected with the OSC2 pin of conversion chip K1 after resistance R1, the triode VT1 that base stage is then connected with the OSC2 pin of conversion chip K1 after fundamental quartz crystal X, and be connected with the OUT2 pin of conversion chip K1 and signal amplification circuit while of one end, the resistance R2 that the other end is connected with the base stage of triode VT1 forms, the base stage of described triode VT1 is connected with external power source, the IN1 pin of conversion chip K is connected with the non-same polarity of transformer T1 secondary, its IN2 pin is then connected with the Same Name of Ends of transformer T1 secondary, GND pin is connected with the non-same polarity on the former limit of transformer T1, VCC pin is connected with the base stage of triode VT1, OUT1 pin is connected with the positive pole of electric capacity C10, described transformer T1 former limit non-same polarity ground connection.
Described signal amplification circuit is by amplifier P1, amplifier P2, be serially connected in the resistance R6 between the inverting input of amplifier P1 and output, one end is connected with the normal phase input end of amplifier P1, the resistance R5 of other end ground connection, be serially connected in the resistance R4 between the inverting input of amplifier P2 and output, and one end is connected with the normal phase input end of amplifier P2, the resistance R3 of other end ground connection forms; The inverting input of described amplifier P1 is connected with the N pole of diode D1, its output is then connected with bandwidth-limited circuit, and the inverting input of amplifier P2 is connected with the OUT2 pin of conversion chip K1, its output is then connected with bandwidth-limited circuit.
Described bandwidth-limited circuit is by the first process chip K2, second process chip K3, one end is connected with the OUT pin of the first process chip K2, the electric capacity C4 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R7 through resistance R8, one end is connected with the IN1 pin of the first process chip K2, the electric capacity C5 that the other end is then connected with the output of amplifier P1, one end is connected with the IN1 pin of the first process chip K2, the resistance R10 that the other end is connected with the OUT pin of the first process chip K2, one end is connected with the IN2 pin of the second process chip K3, the electric capacity C3 that the other end is connected with the IN2 pin of the first process chip K2 after resistance R9, one end is connected with OUT pin with the V+ pin of the second process chip K3 simultaneously, the electric capacity C6 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R11 through resistance R12, and one end is connected with the IN1 pin of the second process chip K3, the electric capacity C7 that the other end is then connected with the OUT pin of the first process chip K2 forms, the V+ pin of described first process chip K2 is connected with external power source, V-pin ground connection, the IN2 pin of the second process chip K3 is connected with the output of amplifier P2, its V-pin ground connection, OUT pin are then connected with buffer circuit, the tie point ground connection of resistance R9 and electric capacity C3.
Described buffer circuit is by transformer T2, dual-gate field-effect pipe Q2, positive pole is connected with a grid of dual-gate field-effect pipe Q2, the electric capacity C8 of minus earth, the resistance R15 be in parallel with electric capacity C8, one end is connected with the positive pole of electric capacity C8, the resistance R14 that the other end is connected with the Same Name of Ends on the former limit of transformer T2 after resistance R13, one end is connected with the b grid of dual-gate field-effect pipe Q2, the resistance R16 that the other end is connected with the source electrode of dual-gate field-effect pipe Q2 after electric capacity C9, and one end is connected with the source electrode of dual-gate field-effect pipe Q2, the resistance R17 that the other end is connected with the tie point of electric capacity C9 with resistance R16 forms, the b grid of described dual-gate field-effect pipe Q2 is also connected with the OUT pin of the second process chip K3, it drains and to be connected with the non-same polarity on the former limit of transformer T2, the Same Name of Ends ground connection of transformer T2 secondary, the tie point ground connection of resistance R16 and electric capacity C9.
The first described process chip K2 and the second process chip K3 all adopts LM741 process chip.
Described driving chip U is LM387 integrated chip.
The present invention compared with prior art has the following advantages and beneficial effect:
1, the present invention adopts linear drive circuit greatly can improve the sensitivity of oscillatory system.
2, the present invention is by adjustment potentiometer R7 and potentiometer R11, namely can adjust the frequency filtering of oscillatory system, expand the scope of application of oscillatory system.
3, the present invention adopts LM387 chip as driving chip, its highly sensitive, low price.
Accompanying drawing explanation
Fig. 1 is overall structure schematic diagram of the present invention.
Fig. 2 is the structural representation of linear drive circuit of the present invention.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment
As shown in Figure 1, bandpass filtering oscillatory system based on Linear Driving of the present invention, primarily of signal conversion circuit, the signal amplification circuit be connected with signal conversion circuit, the bandwidth-limited circuit be connected with signal amplification circuit, the buffer circuit be connected with bandwidth-limited circuit forms, between signal conversion circuit and signal amplification circuit, be also provided with linear drive circuit.
As shown in Figure 2, described linear drive circuit is by driving chip U, triode VT2, triode VT3, triode VT4, triode VT5, positive pole is connected with signal conversion circuit, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U after resistance R18, one end is connected with the collector electrode of triode VT5, the resistance R19 that the other end is connected with the base stage of triode VT3 after resistance R20, positive pole is connected with the base stage of triode VT5, the polar capacitor C11 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C12 of minus earth, one end is connected with the emitter of triode VT5, the resistance R22 that the other end is connected with the base stage of triode VT2, one end is connected with the base stage of triode VT2, the resistance R21 that the other end is connected with the base stage of triode VT3, N pole is connected with the collector electrode of triode VT5, the diode D1 that P pole is connected with the collector electrode of triode VT2, positive terminal is connected with the collector electrode of triode VT5, the not gate K that end of oppisite phase is connected with triode VT4 collector electrode, one end is connected with triode VT4 emitter, the resistance R24 that the other end is connected with the emitter of triode VT3 after resistance R23, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R24 with resistance R23 forms, the VCC pin of described driving chip U is connected with the base stage of triode VT5, END pin ground connection, OUT pin are connected with the collector electrode of triode VT2, the collector electrode of triode VT2 is also connected with the base stage of triode VT4, its emitter is connected with the base stage of triode man VT3, the grounded collector of triode VT3, the N pole of diode D2 is connected with signal amplification circuit.The present invention adopts linear drive circuit greatly can improve the sensitivity of oscillatory system.In order to ensure implementation result, described driving chip U is preferably LM387 integrated chip, its highly sensitive and low price.
Described signal conversion circuit is by conversion chip K1, transformer T1, be serially connected in the electric capacity C1 between transformer T1 secondary Same Name of Ends and non-same polarity, the electric capacity C2 be in parallel with electric capacity C1, collector electrode is connected with the OSC1 pin of conversion chip K1, emitter is connected with the OSC2 pin of conversion chip K1 after resistance R1, the triode VT1 that base stage is then connected with the OSC2 pin of conversion chip K1 after fundamental quartz crystal X, and be connected with the OUT2 pin of conversion chip K1 and signal amplification circuit while of one end, the resistance R2 that the other end is connected with the base stage of triode VT1 forms, the base stage of described triode VT1 is connected with external power source, the IN1 pin of conversion chip K is connected with the non-same polarity of transformer T1 secondary, its IN2 pin is then connected with the Same Name of Ends of transformer T1 secondary, GND pin is connected with the non-same polarity on the former limit of transformer T1, VCC pin is connected with the base stage of triode VT1, OUT1 pin is connected with the positive pole of electric capacity C10, described transformer T1 former limit non-same polarity ground connection.
Described signal amplification circuit is by amplifier P1, amplifier P2, be serially connected in the resistance R6 between the inverting input of amplifier P1 and output, one end is connected with the normal phase input end of amplifier P1, the resistance R5 of other end ground connection, be serially connected in the resistance R4 between the inverting input of amplifier P2 and output, and one end is connected with the normal phase input end of amplifier P2, the resistance R3 of other end ground connection forms; The inverting input of described amplifier P1 is connected with the N pole of diode D1, its output is then connected with bandwidth-limited circuit, and the inverting input of amplifier P2 is connected with the OUT2 pin of conversion chip K1, its output is then connected with bandwidth-limited circuit.
Described bandwidth-limited circuit is by the first process chip K2, second process chip K3, one end is connected with the OUT pin of the first process chip K2, the electric capacity C4 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R7 through resistance R8, one end is connected with the IN1 pin of the first process chip K2, the electric capacity C5 that the other end is then connected with the output of amplifier P1, one end is connected with the IN1 pin of the first process chip K2, the resistance R10 that the other end is connected with the OUT pin of the first process chip K2, one end is connected with the IN2 pin of the second process chip K3, the electric capacity C3 that the other end is connected with the IN2 pin of the first process chip K2 after resistance R9, one end is connected with OUT pin with the V+ pin of the second process chip K3 simultaneously, the electric capacity C6 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R11 through resistance R12, and one end is connected with the IN1 pin of the second process chip K3, the electric capacity C7 that the other end is then connected with the OUT pin of the first process chip K2 forms, the V+ pin of described first process chip K2 is connected with external power source, V-pin ground connection, the IN2 pin of the second process chip K3 is connected with the output of amplifier P2, its V-pin ground connection, OUT pin are then connected with buffer circuit, the tie point ground connection of resistance R9 and electric capacity C3.The first described process chip K2 and the second process chip K3 all adopts LM741 process chip.
Described buffer circuit is by transformer T2, dual-gate field-effect pipe Q2, positive pole is connected with a grid of dual-gate field-effect pipe Q2, the electric capacity C8 of minus earth, the resistance R15 be in parallel with electric capacity C8, one end is connected with the positive pole of electric capacity C8, the resistance R14 that the other end is connected with the Same Name of Ends on the former limit of transformer T2 after resistance R13, one end is connected with the b grid of dual-gate field-effect pipe Q2, the resistance R16 that the other end is connected with the source electrode of dual-gate field-effect pipe Q2 after electric capacity C9, and one end is connected with the source electrode of dual-gate field-effect pipe Q2, the resistance R17 that the other end is connected with the tie point of electric capacity C9 with resistance R16 forms, the b grid of described dual-gate field-effect pipe Q2 is also connected with the OUT pin of the second process chip K3, it drains and to be connected with the non-same polarity on the former limit of transformer T2, the Same Name of Ends ground connection of transformer T2 secondary, the tie point ground connection of resistance R16 and electric capacity C9.
As mentioned above, just well the present invention can be realized.

Claims (7)

1. based on the bandpass filtering oscillatory system of Linear Driving, primarily of signal conversion circuit, the signal amplification circuit be connected with signal conversion circuit, the bandwidth-limited circuit be connected with signal amplification circuit, the buffer circuit be connected with bandwidth-limited circuit forms, and it is characterized in that: between signal conversion circuit and signal amplification circuit, be also provided with linear drive circuit, described linear drive circuit is by driving chip U, triode VT2, triode VT3, triode VT4, triode VT5, positive pole is connected with signal conversion circuit, the polar capacitor C10 that negative pole is connected with the IN1 pin of driving chip U after resistance R18, one end is connected with the collector electrode of triode VT5, the resistance R19 that the other end is connected with the base stage of triode VT3 after resistance R20, positive pole is connected with the base stage of triode VT5, the polar capacitor C11 that negative pole is connected with the IN1 pin of driving chip U, positive pole is connected with the IN2 pin of driving chip U, the polar capacitor C12 of minus earth, one end is connected with the emitter of triode VT5, the resistance R22 that the other end is connected with the base stage of triode VT2, one end is connected with the base stage of triode VT2, the resistance R21 that the other end is connected with the base stage of triode VT3, N pole is connected with the collector electrode of triode VT5, the diode D1 that P pole is connected with the collector electrode of triode VT2, positive terminal is connected with the collector electrode of triode VT5, the not gate K that end of oppisite phase is connected with triode VT4 collector electrode, one end is connected with triode VT4 emitter, the resistance R24 that the other end is connected with the emitter of triode VT3 after resistance R23, the end of oppisite phase of P pole NAND gate K is connected, the diode D2 that N pole is connected with the tie point of resistance R24 with resistance R23 forms, the VCC pin of described driving chip U is connected with the base stage of triode VT5, END pin ground connection, OUT pin are connected with the collector electrode of triode VT2, the collector electrode of triode VT2 is also connected with the base stage of triode VT4, its emitter is connected with the base stage of triode man VT3, the grounded collector of triode VT3, the N pole of diode D2 is connected with signal amplification circuit.
2. the bandpass filtering oscillatory system based on Linear Driving according to claim 1, it is characterized in that: described signal conversion circuit is by conversion chip K1, transformer T1, be serially connected in the electric capacity C1 between transformer T1 secondary Same Name of Ends and non-same polarity, the electric capacity C2 be in parallel with electric capacity C1, collector electrode is connected with the OSC1 pin of conversion chip K1, emitter is connected with the OSC2 pin of conversion chip K1 after resistance R1, the triode VT1 that base stage is then connected with the OSC2 pin of conversion chip K1 after fundamental quartz crystal X, and be connected with the OUT2 pin of conversion chip K1 and signal amplification circuit while of one end, the resistance R2 that the other end is connected with the base stage of triode VT1 forms, the base stage of described triode VT1 is connected with external power source, the IN1 pin of conversion chip K is connected with the non-same polarity of transformer T1 secondary, its IN2 pin is then connected with the Same Name of Ends of transformer T1 secondary, GND pin is connected with the non-same polarity on the former limit of transformer T1, VCC pin is connected with the base stage of triode VT1, OUT1 pin is connected with the positive pole of electric capacity C10, described transformer T1 former limit non-same polarity ground connection.
3. the bandpass filtering oscillatory system based on Linear Driving according to claim 2, it is characterized in that: described signal amplification circuit is by amplifier P1, amplifier P2, be serially connected in the resistance R6 between the inverting input of amplifier P1 and output, one end is connected with the normal phase input end of amplifier P1, the resistance R5 of other end ground connection, be serially connected in the resistance R4 between the inverting input of amplifier P2 and output, and one end is connected with the normal phase input end of amplifier P2, the resistance R3 of other end ground connection forms; The inverting input of described amplifier P1 is connected with the N pole of diode D1, its output is then connected with bandwidth-limited circuit, and the inverting input of amplifier P2 is connected with the OUT2 pin of conversion chip K1, its output is then connected with bandwidth-limited circuit.
4. the bandpass filtering oscillatory system based on Linear Driving according to claim 3, it is characterized in that: described bandwidth-limited circuit is by the first process chip K2, second process chip K3, one end is connected with the OUT pin of the first process chip K2, the electric capacity C4 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R7 through resistance R8, one end is connected with the IN1 pin of the first process chip K2, the electric capacity C5 that the other end is then connected with the output of amplifier P1, one end is connected with the IN1 pin of the first process chip K2, the resistance R10 that the other end is connected with the OUT pin of the first process chip K2, one end is connected with the IN2 pin of the second process chip K3, the electric capacity C3 that the other end is connected with the IN2 pin of the first process chip K2 after resistance R9, one end is connected with OUT pin with the V+ pin of the second process chip K3 simultaneously, the electric capacity C6 that the other end is connected with the IN2 pin of the second process chip K3 after potentiometer R11 through resistance R12, and one end is connected with the IN1 pin of the second process chip K3, the electric capacity C7 that the other end is then connected with the OUT pin of the first process chip K2 forms, the V+ pin of described first process chip K2 is connected with external power source, V-pin ground connection, the IN2 pin of the second process chip K3 is connected with the output of amplifier P2, its V-pin ground connection, OUT pin are then connected with buffer circuit, the tie point ground connection of resistance R9 and electric capacity C3.
5. the bandpass filtering oscillatory system based on Linear Driving according to claim 4, it is characterized in that: described buffer circuit is by transformer T2, dual-gate field-effect pipe Q2, positive pole is connected with a grid of dual-gate field-effect pipe Q2, the electric capacity C8 of minus earth, the resistance R15 be in parallel with electric capacity C8, one end is connected with the positive pole of electric capacity C8, the resistance R14 that the other end is connected with the Same Name of Ends on the former limit of transformer T2 after resistance R13, one end is connected with the b grid of dual-gate field-effect pipe Q2, the resistance R16 that the other end is connected with the source electrode of dual-gate field-effect pipe Q2 after electric capacity C9, and one end is connected with the source electrode of dual-gate field-effect pipe Q2, the resistance R17 that the other end is connected with the tie point of electric capacity C9 with resistance R16 forms, the b grid of described dual-gate field-effect pipe Q2 is also connected with the OUT pin of the second process chip K3, it drains and to be connected with the non-same polarity on the former limit of transformer T2, the Same Name of Ends ground connection of transformer T2 secondary, the tie point ground connection of resistance R16 and electric capacity C9.
6. the bandpass filtering oscillatory system based on Linear Driving according to claim 5, is characterized in that: the first described process chip K2 and the second process chip K3 all adopts LM741 process chip.
7. the bandpass filtering oscillatory system based on Linear Driving according to any one of claim 1 ~ 6, is characterized in that: described driving chip U is LM387 integrated chip.
CN201410714737.XA 2014-11-29 2014-11-29 Band-pass filtering oscillating system based on linear driving Pending CN104506141A (en)

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CN201410714737.XA CN104506141A (en) 2014-11-29 2014-11-29 Band-pass filtering oscillating system based on linear driving
CN201510323551.6A CN104967408A (en) 2014-11-29 2015-06-12 Band-pass filtering oscillation system based on step-down type constant current circuit

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CN104807515A (en) * 2015-04-13 2015-07-29 成都诚邦动力测试仪器有限公司 Overall performance test system based on instantaneous fuel consumption of engine
CN104967408A (en) * 2014-11-29 2015-10-07 成都颉盛科技有限公司 Band-pass filtering oscillation system based on step-down type constant current circuit

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CN105507737A (en) * 2015-12-22 2016-04-20 成都雷纳斯科技有限公司 High-sensitivity intelligent anti-theft system
CN106323482A (en) * 2016-08-27 2017-01-11 四川华索自动化信息工程有限公司 Signal level adjusting type processing system used for flue gas temperature alarm device

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CN2199636Y (en) * 1994-03-29 1995-05-31 许天昀 Current transformer
US6724556B2 (en) * 2001-06-29 2004-04-20 Texas Instruments Incorporated Single pole voltage bias loop for increased stability
CN104410365A (en) * 2014-11-26 2015-03-11 成都创图科技有限公司 Phase-shift processing based band-pass filtering oscillation system
CN104506141A (en) * 2014-11-29 2015-04-08 成都思茂科技有限公司 Band-pass filtering oscillating system based on linear driving

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CN104967408A (en) * 2014-11-29 2015-10-07 成都颉盛科技有限公司 Band-pass filtering oscillation system based on step-down type constant current circuit
CN104807515A (en) * 2015-04-13 2015-07-29 成都诚邦动力测试仪器有限公司 Overall performance test system based on instantaneous fuel consumption of engine

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Application publication date: 20150408