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CN104495744A - Method of directly implementing dip-pen nanolithography on hydrophobic substrate - Google Patents

Method of directly implementing dip-pen nanolithography on hydrophobic substrate Download PDF

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CN104495744A
CN104495744A CN201410784345.0A CN201410784345A CN104495744A CN 104495744 A CN104495744 A CN 104495744A CN 201410784345 A CN201410784345 A CN 201410784345A CN 104495744 A CN104495744 A CN 104495744A
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organic solvent
hydrophobic
hydrophobic substrate
needle tip
afm
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杨海军
张琛
侯铮迟
胡钧
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Shanghai Institute of Applied Physics of CAS
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Shanghai Institute of Applied Physics of CAS
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Abstract

本发明提供一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法,所述方法包括:将AFM针尖与疏水基底密封在一个充满有机溶剂蒸汽的空间内,通过所述有机溶剂蒸汽在所述AFM针尖和疏水基底上的吸附在所述AFM针尖和疏水基底之间形成液桥,将所述AFM针尖上预先吸附的物质转移到所述疏水基底的表面,制备出疏水纳米结构。本发明利用有机溶剂易于在疏水表面吸附的特点,采用有机溶剂蒸汽替代现有技术中的高湿度空气,直接在疏水基底上实施蘸笔纳米刻蚀技术制备出了疏水纳米结构,减少了制造工序,该疏水纳米结构克服了现有的亲水纳米结构易吸附空气中水分的缺陷,更加稳定,有利于降低纳米器件的封装成本,增加其使用性能并延长其使用寿命。

The present invention provides a method for directly implementing dip-pen nano-etching technology on a hydrophobic substrate, the method comprising: sealing the AFM needle tip and the hydrophobic substrate in a space filled with organic solvent vapor, through which the organic solvent vapor The adsorption on the AFM needle tip and the hydrophobic substrate forms a liquid bridge between the AFM needle tip and the hydrophobic substrate, and transfers the substance pre-adsorbed on the AFM needle tip to the surface of the hydrophobic substrate to prepare a hydrophobic nanostructure. The present invention utilizes the characteristics that organic solvents are easy to adsorb on hydrophobic surfaces, uses organic solvent vapor to replace the high-humidity air in the prior art, and directly implements dipping pen nano-etching technology on hydrophobic substrates to prepare hydrophobic nanostructures, reducing the manufacturing process , the hydrophobic nanostructure overcomes the defect that the existing hydrophilic nanostructure is easy to absorb moisture in the air, is more stable, and is conducive to reducing the packaging cost of nanodevices, increasing its performance and prolonging its service life.

Description

一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法A Method for Implementing Dip Pen Nanolithography Technique Directly on Hydrophobic Substrates

技术领域technical field

本发明涉及纳米制造领域,更具体地涉及一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法。The invention relates to the field of nano-manufacturing, in particular to a method for directly implementing dip-pen nano-etching technology on a hydrophobic substrate.

背景技术Background technique

蘸笔纳米刻蚀技术是一种利用原子力显微镜针尖与基底间形成的液桥,将吸附在针尖表面的物质转移到基底表面,从而制备纳米结构的制造技术。具有定位准确、分辨率高、图形可任意设计等优点。目前所有的蘸笔纳米刻蚀技术都是在高湿度的空气中实施,以确保针尖与基底间能形成液桥。这就要求基底必须亲水,使其更有利于空气中的水分子吸附。Dip pen nano-etching technology is a manufacturing technology that uses the liquid bridge formed between the tip of the atomic force microscope and the substrate to transfer the substance adsorbed on the surface of the tip to the surface of the substrate to prepare nanostructures. It has the advantages of accurate positioning, high resolution, and graphics can be designed arbitrarily. All current dip pen nanolithography techniques are performed in high-humidity air to ensure the formation of a liquid bridge between the tip and the substrate. This requires that the substrate must be hydrophilic, making it more conducive to the adsorption of water molecules in the air.

对于疏水基底而言,要成功实施蘸笔纳米刻蚀技术就必须预先对其进行修饰,包括表面氧化或接枝、吸附上一些亲水性分子。这些处理方法一方面改变了基底的表面性质,另一方面增加了处理的工序,增加了成本。更为重要的是,这些在亲水表面制备的纳米结构由于其本质上易吸附空气中的水分,而吸附的水分子又会对纳米结构的性质产生一定的影响。因此,对器件封装的要求很高,其使用寿命易受环境湿度的影响。For hydrophobic substrates, it must be modified in advance in order to successfully implement dip pen nano-etching technology, including surface oxidation or grafting, and adsorption of some hydrophilic molecules. On the one hand, these treatment methods change the surface properties of the substrate, on the other hand, they increase the treatment process and increase the cost. More importantly, these nanostructures prepared on hydrophilic surfaces are easy to adsorb moisture in the air in nature, and the adsorbed water molecules will have a certain impact on the properties of the nanostructures. Therefore, the requirements for device packaging are very high, and its service life is easily affected by ambient humidity.

此外,目前的蘸笔纳米刻蚀技术都是利用高湿度空气中的水分子形成液桥来实施,只能对一些能够溶解于水中的物质进行操作,这也大大限制了该技术的应用领域。因此,很有必要开发一种能够直接在疏水基底上实施的蘸笔纳米刻蚀技术。In addition, the current dip pen nano-etching technology is implemented by using water molecules in high-humidity air to form a liquid bridge, and can only operate on some substances that can be dissolved in water, which greatly limits the application field of this technology. Therefore, it is necessary to develop a dip-pen nanolithography technique that can be directly implemented on hydrophobic substrates.

发明内容Contents of the invention

本发明的目的是提供一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法,从而解决现有技术中的蘸笔纳米刻蚀技术仅限于在亲水基底上操作,只能对溶解于水的物质进行转移,并且制造的亲水纳米结构对器件封装要求较高,使用寿命较短的缺陷。The purpose of the present invention is to provide a method for directly implementing dipping pen nano-etching technology on a hydrophobic substrate, thereby solving the problem that the dipping pen nano-etching technology in the prior art is limited to operating on a hydrophilic substrate and can only be used for dissolving in Water substances are transferred, and the manufactured hydrophilic nanostructures have higher requirements for device packaging and shorter service life.

为了解决上述技术问题,本发明采用以下技术方案:In order to solve the above technical problems, the present invention adopts the following technical solutions:

提供一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法,所述方法包括:将AFM针尖与疏水基底密封在一个充满有机溶剂蒸汽的空间内,通过所述有机溶剂蒸汽在所述AFM针尖和疏水基底上的吸附在所述AFM针尖和疏水基底之间形成液桥,将所述AFM针尖上预先吸附的物质转移到所述疏水基底的表面,制备疏水纳米结构。Provide a kind of method that dip pen nano-etching technology is directly implemented on the hydrophobic substrate, the method comprises: the AFM tip and the hydrophobic substrate are sealed in a space full of organic solvent vapor, through the organic solvent vapor in the AFM The adsorption on the needle tip and the hydrophobic substrate forms a liquid bridge between the AFM needle tip and the hydrophobic substrate, and transfers the substance pre-adsorbed on the AFM needle tip to the surface of the hydrophobic substrate to prepare a hydrophobic nanostructure.

优选地,所述有机溶剂能浸润所述疏水基底的表面。Preferably, the organic solvent is capable of wetting the surface of the hydrophobic substrate.

优选地,所述有机溶剂不能溶胀或溶解所述疏水基底。Preferably, the organic solvent is unable to swell or dissolve the hydrophobic substrate.

所述有机溶剂至少部分地溶解所述AFM针尖上预先吸附的物质。The organic solvent at least partially dissolves the pre-adsorbed substances on the AFM tip.

优选地,所述有机溶剂是易挥发的醇类,苯类,酯类或醚类。例如:甲醇、乙醇、甲苯、二甲苯、甲基丙烯酸甲酯、甲基丙烯酸乙酯和四氢呋喃等等。具体可根据AFM针尖上预先吸附的物质选择相应的有机溶剂,只要该有机溶剂能够溶解该物质即可。Preferably, the organic solvent is volatile alcohols, benzenes, esters or ethers. For example: methanol, ethanol, toluene, xylene, methyl methacrylate, ethyl methacrylate and tetrahydrofuran, etc. Specifically, the corresponding organic solvent can be selected according to the substance pre-adsorbed on the AFM needle tip, as long as the organic solvent can dissolve the substance.

所述有机溶剂可以是单种有机溶剂,或者是有机溶剂与水的混合物,也可以是多种有机溶剂的混合物。多种溶剂的混合比例可根据针尖上预先吸附的物质和基底的性质在0.1%到99.9%之间进行选择。The organic solvent can be a single organic solvent, or a mixture of an organic solvent and water, or a mixture of multiple organic solvents. The mixing ratio of various solvents can be selected from 0.1% to 99.9% according to the pre-adsorbed substances on the tip and the properties of the substrate.

所述有机溶剂蒸汽的填充可通过风机强制填充或通过所述有机溶剂的自然挥发实现。The filling of the organic solvent vapor can be realized by forced filling by a blower or by natural volatilization of the organic solvent.

所述疏水基底可选自金属,有机物,无机物或高分子材料等等,只要是疏水物质皆适用于本发明。The hydrophobic substrate can be selected from metals, organic substances, inorganic substances or polymer materials, etc., as long as it is a hydrophobic substance, it is suitable for the present invention.

根据本发明所使用的方法,所述疏水基底无需进行表面修饰,即可进行纳米结构的制备,减少了制造工序。According to the method used in the present invention, the hydrophobic substrate can be prepared with nanostructures without surface modification, reducing the manufacturing process.

所述AFM针尖上预先吸附的物质是通过溶解-吸附-干燥或蒸镀吸附在所述AFM针尖的表面。The substance pre-adsorbed on the AFM needle tip is adsorbed on the surface of the AFM needle tip through dissolution-adsorption-drying or evaporation.

所述AFM针尖可以是原子力显微镜的单根探针,也可以是探针阵列。The AFM tip can be a single probe of an atomic force microscope, or a probe array.

本发明与现有技术相比具有显著的有益效果:本发明利用有机溶剂易于在疏水表面吸附的特点,采用有机溶剂蒸汽替代现有技术中的高湿度空气,直接在疏水基底上实施蘸笔纳米刻蚀技术制备纳米结构,无需对基底表面进行任何处理工序,节约了制造时间和成本;还能对溶解于有机溶剂的物质进行操作;成功制备了疏水纳米结构,大大扩展了蘸笔纳米刻蚀技术的应用领域;并且该疏水纳米结构克服了现有的亲水纳米结构易吸附空气中水分的缺陷,更加稳定,有利于降低纳米器件的封装成本,增加其使用性能并延长其使用寿命。Compared with the prior art, the present invention has significant beneficial effects: the present invention utilizes the characteristics that organic solvents are easy to adsorb on hydrophobic surfaces, uses organic solvent vapor to replace the high-humidity air in the prior art, and implements dipping pen nanometer directly on hydrophobic substrates. Etching technology to prepare nanostructures does not require any treatment process on the substrate surface, which saves manufacturing time and cost; it can also operate on substances dissolved in organic solvents; successfully prepared hydrophobic nanostructures, which greatly expands the scope of dipping pen nano-etching. The application field of technology; and the hydrophobic nanostructure overcomes the defect that the existing hydrophilic nanostructure is easy to absorb moisture in the air, and is more stable, which is conducive to reducing the packaging cost of nanodevices, increasing its performance and prolonging its service life.

附图说明Description of drawings

图1是本发明的原理示意图。Fig. 1 is a schematic diagram of the principle of the present invention.

具体实施方式Detailed ways

以下结合具体实施例,对本发明做进一步说明。应理解,以下实施例仅用于说明本发明而非用于限制本发明的范围。The present invention will be further described below in conjunction with specific embodiments. It should be understood that the following examples are only used to illustrate the present invention but not to limit the scope of the present invention.

图1示出了根据本发明的一个优选实施方式的方法的原理示意图,其中,AFM针尖1与疏水基底2被密封在一个容器3中,该容器3中充满有机溶剂蒸汽4,当AFM针尖1停留在疏水基底2上时,通过有机溶剂蒸汽4在AFM针尖1和疏水基底2上的吸附形成有机溶剂液桥5,从而将AFM针尖1上预先吸附的墨水转移到疏水基底2上,进而在该疏水基底2上成功制备出纳米结构。Fig. 1 has shown the schematic diagram of the principle of the method according to a preferred embodiment of the present invention, and wherein, AFM tip 1 and hydrophobic substrate 2 are sealed in a container 3, and this container 3 is full of organic solvent vapor 4, when AFM tip 1 When staying on the hydrophobic substrate 2, the organic solvent liquid bridge 5 is formed by the adsorption of the organic solvent vapor 4 on the AFM tip 1 and the hydrophobic substrate 2, thereby transferring the pre-adsorbed ink on the AFM tip 1 to the hydrophobic substrate 2, and then on the Nanostructures were successfully prepared on the hydrophobic substrate 2 .

实施例一Embodiment one

利用NP-S型AFM针尖,在甲苯饱和蒸汽中实施蘸笔纳米刻蚀技术。所采用的疏水基底为石墨,力为20nN,墨水为聚甲基丙烯酸甲酯。当针尖停留在石墨表面10秒钟后,抬起针尖,并成像,可以看到石墨表面有一个光滑的亮点出现,说明成功实现了纳米结构的制备。Using the NP-S type AFM tip, the dip pen nano-etching technique was implemented in toluene saturated vapor. The hydrophobic substrate employed was graphite, the force was 20 nN, and the ink was polymethyl methacrylate. When the needle tip stayed on the graphite surface for 10 seconds, the needle tip was lifted up and imaged, and a smooth bright spot appeared on the graphite surface, indicating that the nanostructure was successfully prepared.

实施例二Embodiment two

利用NSC-18型AFM针尖,在乙醇饱和蒸汽中实施蘸笔纳米刻蚀技术。所采用的疏水基底为聚二甲基硅氧烷,墨水为聚乙烯吡咯烷酮。针尖在基底表面的停留时间为10秒钟,施加的力为20nN。然后抬起针尖,并成像,可以看到基底表面有一个光滑的亮点出现,说明成功实现了纳米结构的制备。Using the NSC-18 AFM tip, the dip pen nano-etching technique was implemented in ethanol saturated vapor. The hydrophobic substrate used is polydimethylsiloxane and the ink is polyvinylpyrrolidone. The residence time of the needle tip on the substrate surface was 10 seconds, and the applied force was 20 nN. Then lift the needle tip and image it, you can see a smooth bright spot on the surface of the substrate, indicating that the nanostructure has been successfully prepared.

实施例三Embodiment Three

利用NSC-18型AFM针尖,在乙醇/水为1:1的饱和蒸汽中实施蘸笔纳米刻蚀技术。所采用的疏水基底为聚二甲基硅氧烷,墨水为聚乙二醇。针尖在基底表面的停留时间为10秒钟,施加的力为20nN。然后抬起针尖,并成像,可以看到基底表面有一个光滑的亮点出现,说明成功实现了纳米结构的制备。Using the NSC-18 AFM needle tip, the dip pen nano-etching technique was implemented in the saturated vapor of ethanol/water 1:1. The hydrophobic base used is polydimethylsiloxane and the ink is polyethylene glycol. The residence time of the needle tip on the substrate surface was 10 seconds, and the applied force was 20 nN. Then lift the needle tip and image it, you can see a smooth bright spot on the surface of the substrate, indicating that the nanostructure has been successfully prepared.

以上所述的,仅为本发明的较佳实施例,并非用以限定本发明的范围,本发明的上述实施例还可以做出各种变化。即凡是依据本发明申请的权利要求书及说明书内容所作的简单、等效变化与修饰,皆落入本发明专利的权利要求保护范围。本发明未详尽描述的均为常规技术内容。What is described above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Various changes can also be made to the above embodiments of the present invention. That is to say, all simple and equivalent changes and modifications made according to the claims and description of the application for the present invention fall within the protection scope of the claims of the patent of the present invention. What is not described in detail in the present invention is conventional technical contents.

Claims (10)

1.一种直接在疏水基底上实施蘸笔纳米刻蚀技术的方法,其特征在于,所述方法包括:将AFM针尖与疏水基底密封在一个充满有机溶剂蒸汽的空间内,通过所述有机溶剂蒸汽在所述AFM针尖和疏水基底上的吸附在所述AFM针尖和疏水基底之间形成液桥,将所述AFM针尖上预先吸附的物质转移到所述疏水基底的表面,制备出疏水纳米结构。1. A method of directly implementing dip pen nano-etching technology on a hydrophobic substrate, characterized in that the method comprises: sealing the AFM needle tip and the hydrophobic substrate in a space full of organic solvent vapor, passing through the organic solvent The adsorption of steam on the AFM needle tip and the hydrophobic substrate forms a liquid bridge between the AFM needle tip and the hydrophobic substrate, and transfers the pre-adsorbed substance on the AFM needle tip to the surface of the hydrophobic substrate to prepare a hydrophobic nanostructure . 2.根据权利要求1所述的方法,其特征在于,所述有机溶剂能浸润所述疏水基底的表面。2. The method of claim 1, wherein the organic solvent is capable of wetting the surface of the hydrophobic substrate. 3.根据权利要求1所述的方法,其特征在于,所述有机溶剂不能溶胀或溶解所述疏水基底。3. The method of claim 1, wherein the organic solvent cannot swell or dissolve the hydrophobic substrate. 4.根据权利要求1所述的方法,其特征在于,所述有机溶剂至少部分地溶解所述AFM针尖上预先吸附的物质。4. The method of claim 1, wherein the organic solvent at least partially dissolves the pre-adsorbed substance on the AFM tip. 5.根据权利要求1所述的方法,其特征在于,所述有机溶剂是易挥发的醇类,苯类,酯类或醚类。5. The method according to claim 1, characterized in that, the organic solvent is volatile alcohols, benzenes, esters or ethers. 6.根据权利要求5所述的方法,其特征在于,所述有机溶剂是单种有机溶剂,或有机溶剂与水的混合物,或多种有机溶剂的混合物。6. The method according to claim 5, characterized in that, the organic solvent is a single organic solvent, or a mixture of an organic solvent and water, or a mixture of multiple organic solvents. 7.根据权利要求1所述的方法,其特征在于,所述有机溶剂蒸汽的填充通过风机强制填充或通过所述有机溶剂的自然挥发实现。7. The method according to claim 1, characterized in that, the filling of the organic solvent vapor is realized by forced filling by a fan or by natural volatilization of the organic solvent. 8.根据权利要求1所述的方法,其特征在于,所述疏水基底选自金属,有机物,无机物或高分子材料中的一种。8. The method according to claim 1, characterized in that the hydrophobic substrate is selected from one of metal, organic, inorganic or polymer materials. 9.根据权利要求8所述的方法,其特征在于,所述疏水基底无需进行表面修饰。9. The method of claim 8, wherein the hydrophobic substrate does not require surface modification. 10.根据权利要求1所述的方法,其特征在于,所述AFM针尖为原子力显微镜的单根探针或探针阵列。10. The method according to claim 1, wherein the AFM tip is a single probe or a probe array of an atomic force microscope.
CN201410784345.0A 2014-12-16 2014-12-16 Method of directly implementing dip-pen nanolithography on hydrophobic substrate Pending CN104495744A (en)

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KHALID SALAITA,ANAND AMARNATH,THOMAS B. HIGGINS,CHAD A.MIRKIN: "The Effects of Organic Vapor on Alkanethiol Deposition via Dip-Pen Nanolithography", 《SCANNING》 *
PETER V. SCHWARTZ: "Molecular Transport from an Atomic Force Microscope Tip: A Comparative Study of Dip-Pen Nanolithography", 《LANGMUIR》 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018126976A1 (en) * 2017-01-04 2018-07-12 北京赛特超润界面科技有限公司 Liquid guiding and infiltrating device utilized in ink brush
CN108538765A (en) * 2018-05-08 2018-09-14 国家纳米科学中心 The transfer method of etching device and figure
CN108538765B (en) * 2018-05-08 2020-10-16 国家纳米科学中心 Etching device and pattern transfer method

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