CN104485498B - Sapphire substrates microstrip filter - Google Patents
Sapphire substrates microstrip filter Download PDFInfo
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- CN104485498B CN104485498B CN201510006726.0A CN201510006726A CN104485498B CN 104485498 B CN104485498 B CN 104485498B CN 201510006726 A CN201510006726 A CN 201510006726A CN 104485498 B CN104485498 B CN 104485498B
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- resonance structure
- unit
- transmission line
- sapphire
- microstrip
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- 229910052594 sapphire Inorganic materials 0.000 title claims abstract description 44
- 239000010980 sapphire Substances 0.000 title claims abstract description 44
- 239000000758 substrate Substances 0.000 title claims abstract description 36
- 230000005540 biological transmission Effects 0.000 claims abstract description 37
- 239000004020 conductor Substances 0.000 claims abstract description 12
- 239000013078 crystal Substances 0.000 claims abstract description 11
- 238000010276 construction Methods 0.000 claims abstract description 9
- 230000001629 suppression Effects 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000002305 electric material Substances 0.000 claims description 2
- 241001062009 Indigofera Species 0.000 claims 1
- 239000010437 gem Substances 0.000 claims 1
- 229910001751 gemstone Inorganic materials 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000003012 network analysis Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
The sapphire substrates microstrip filter that the present invention is provided, comprising sapphire medium substrate and the microstrip transmission line being made of an electrically conducting material and resonance construction unit that are attached in sapphire medium substrate.One end of microstrip transmission line is signal input part, and the other end is signal output part.Resonance structure unit is interdigitated resonance structure, and its quantity is at least one and positioned at the side of transmission line, and multiple resonance structure units form a line along transmission line direction.It is contactless between resonance structure unit and transmission line and between any two resonance structure unit.Side on transmission line away from resonance structure unit is provided with least one second harmonic being made of an electrically conducting material and suppresses unit.The present invention does media substrate using single-crystal sapphire, it is ensured that the stability of wave filter, realize the miniaturization of wave filter.Resonance structure unit and second harmonic are suppressed unit and are combined with microstrip transmission line by the present invention, can obtain the microstrip filter that bandwidth is adjustable, suppression depth is big.
Description
Technical field
The present invention relates to microstrip filter, more particularly to sapphire substrates microstrip filter.
Background technology
Microwave filter is a kind of device for separating different frequency microwave signal.Its Main Function is to suppress to be not required to
The signal wanted, prevents it from by wave filter, only allowing the signal of needs to pass through.In microwave circuit system, the performance of wave filter
Index has a great impact to the performance indications of circuit.
The fast development of wireless communication technology is to the integrated of electronic equipment, miniaturization and high reliability request
More and more higher.The integrated and small form factor requirements circuit of equipment is reduced and takes sky as far as possible on the premise of electric property is met
Between.Wave filter is essential electronic device in electronic equipment, and its Miniaturization Design is that wireless communication electronicses set
One of standby key for realizing miniaturization.
Microstrip filter have flexible design, size it is small, lightweight, loss low, temperature coefficient and the coefficient of expansion it is small, be easy to
The advantage such as integrated, is widely used in microwave circuit and microwave integrated circuit.The size of microstrip filter is depended primarily on
Microstrip line construction size, and the size of microstrip line construction is mainly limited by the dielectric constant of media substrate materials.Generally,
The size of the dielectric constant microstrip line construction higher of the media substrate materials of selection more easily does small.
The dielectric constant of sapphire media substrate is small compared with high, dielectric loss, and its dielectric constant is small with the change of frequency.
In addition, the thermal conductivity of sapphire media substrate is high, thermal coefficient of expansion is small, it is particularly suitable for preparing high power electronic device.Mesh
Before, the artificial monocrystalline sapphire substrate for preparing is applied widely in semicon industry.
The content of the invention
The invention provides a kind of sapphire substrates microstrip filter.
The present invention is achieved by the following technical programs.
The present invention provide sapphire substrates microstrip filter, comprising sapphire medium substrate and be attached to sapphire be situated between
The microstrip transmission line being made of an electrically conducting material and resonance construction unit in matter substrate.One end of microstrip transmission line is signal input
End, the other end is signal output part.Resonance structure unit is interdigitated resonance structure, and its quantity is at least one and positioned at micro-
Side with transmission line, multiple resonance structure units form a line along microstrip transmission line direction.Resonance structure unit is passed with micro-strip
It is contactless between defeated line and between any two resonance structure unit.Away from the side of resonance structure unit on microstrip transmission line
It is provided with least one second harmonic being made of an electrically conducting material and suppresses unit.
Further, the conductive material is for any one in gold, silver, copper, aluminium or appoints several combinations.
Further, the sapphire medium substrate is single-crystal sapphire.
Further, the preferential selection order of the high preferred orientation of the single-crystal sapphire is a planar orientations, c planar orientations, r
Planar orientation, m planar orientations.
Further, the quantity of the interdigitated resonance structure unit is the odd number more than 1, and all interdigitated resonance
Construction unit equidistant arrangement.
Further, it is flute profile that the second harmonic suppresses unit, and each flute profile second harmonic suppresses the number of tooth in unit
Amount is more than 2, and the adjacent interdental space of any two is equal.
Further, the sapphire substrates microstrip filter, the sapphire medium substrate is the sapphire of a planar orientations
Single-chip；The quantity of the interdigitated resonance structure unit is 5, and the size of 5 interdigitated resonance structure units is just the same
And along transmission line direction equidistant arrangement in the side of transmission line；It is flute profile that the second harmonic suppresses unit, and the quantity of tooth is
3, the quantity of the second harmonic suppression unit of 3 flute profile is 4, and is separately positioned on resonance structure cell gap adjacent with two
Relative position.
The beneficial effects of the present invention are：Media substrate is done using single-crystal sapphire, it is ensured that the stabilization of wave filter
Property, the miniaturization for realizing wave filter.Resonance structure unit and second harmonic are suppressed into unit to be combined with microstrip transmission line, can be with
Obtain the microstrip filter that bandwidth is adjustable, suppression depth is big.
Brief description of the drawings
Fig. 1 is the electrical block diagram of the microstrip filter of the present invention program；
Fig. 2 is the circuit structure of embodiment of the present invention 4.3GHz microstrip bandstop filters；
Fig. 3 be embodiment of the present invention 4.3GHz microstrip bandstop filters circuit structure in the interdigitated resonance structure that uses
Unit；
Fig. 4 is the microwave signal transmission the performance test results of embodiment of the present invention 4.3GHz microstrip bandstop filters；
In figure：1- microstrip transmission lines, 2- resonance structure units, 3- second harmonics suppress unit.
Specific embodiment
Technical scheme is described further below, it will be appreciated that the scope of protection of present invention is not limited to
In as described below.
The present invention provide sapphire substrates microstrip filter, comprising sapphire medium substrate and be attached to sapphire be situated between
The microstrip transmission line 1 being made of an electrically conducting material and resonance construction unit 2 in matter substrate.One end of microstrip transmission line 1 is signal
Input, the other end is signal output part.Resonance structure unit 2 be interdigitated resonance structure, its quantity be at least one and
Positioned at the side of microstrip transmission line, multiple resonance structure units 2 form a line along the direction of microstrip transmission line 1.Resonance structure unit 2
It is contactless between microstrip transmission line 1 and between any two resonance structure unit 2.Away from resonance knot on microstrip transmission line 1
The side of structure unit 2 is provided with least one second harmonic being made of an electrically conducting material and suppresses unit 3, and second harmonic suppresses unit
3 is to electrically connect with microstrip transmission line 1.
Above-mentioned conductive material is for any one in gold, silver, copper, aluminium or appoints several combinations.The electrical conductivity of conductive material is got over
Greatly, the electrical loss of wave filter is smaller.Silver, copper are easier to be oxidized, and need to be surface-treated when in use.If passing through film work
Skill prepares the circuit structure of sapphire microstrip filter, needs to be previously deposited before sputtering conducting metal toward in sapphire substrates
One layer of transition metal film, such as titanium or tungsten, the then metal of the good conductivity such as redeposited gold, silver, copper, aluminium.Led to reduce
The electrical loss that electric material causes, the thickness of conductive material generally requires more than several microns, is also needed to more for low-frequency filter
It is thick.
The sapphire medium substrate is single-crystal sapphire.The dielectric properties of sapphire single-crystal are more stable, dielectric loss
It is smaller.The dielectric properties of the single-crystal sapphire of different high preferred orientations difference.The sapphire of a planar orientations is found by experiment
Performance of filter prepared by single-chip is most stable, is secondly successively c planar orientations, r planar orientations, m planar orientations etc..
The quantity of the interdigitated resonance structure unit is the odd number more than 1, and all interdigitated resonance structure units
Equidistant arrangement, orientation is consistent with microstrip transmission line direction.
It is tooth type structures that the second harmonic suppresses unit, and the quantity that each finger-type second harmonic suppresses tooth in unit is more than
2, the adjacent interdental space of any two is equal.
Fig. 1 is electric structural representations of a certain 4.3GHz with resistance microstrip filter.Shown in figure, in microstrip transmission line 1
There are 5 arrangements identical interdigitated resonance structure unit of physical dimension in a row, interdigitated resonance structure unit in lower section
Orientation it is parallel with microstrip transmission line.The distance between the adjacent interdigitated resonance structure unit of any two is equal.Resonance
The quantity of construction unit is relevant with the suppression depth of stopband, and the quantity of resonance structure unit is more, it is bigger to suppress depth.By imitative
Really learn, for 4.3GHz band resistance microstrip filters, the stopband that 3 resonance structure units are obtained suppresses depth more than 20dB, 5
The stopband that resonance structure unit is obtained suppresses depth and is more than 30dB.Distance of the resonance structure unit away from microstrip transmission line and stopband
Bandwidth is relevant, smaller apart from smaller, stopband bandwidth.In the relative micro-strip transmission of the resonance structure cell gap adjacent with two
4 second harmonics of dentation are provided with the side of line and suppress unit, 4 second harmonics suppress unit and are electrically connected with microstrip transmission line
Connect.Each second harmonic suppresses unit has the distance between three teeth, two neighboring tooth equal.From simulation result, flute profile
The quantity that second harmonic suppresses tooth in unit is more, and the effect for suppressing second harmonic is better.4.3GHz band resistance microstrip filters
Electric structure specific size as shown in Figures 2 and 3.
Electric structures of the 4.3GHz with resistance microstrip filter is made up of the metal of 3 μ m-thicks of film etching technique, institute
The medium substrate for using is the single-crystal sapphire of c planar orientations.
Fig. 4 is filtering performance measured results of the 4.3GHz with resistance microstrip filter, and the result passes through vector network analysis
Instrument is obtained.M curves are S in figure21, n curves are S11。S21Curve shows that stop-band frequencies of the 4.3GHz with resistance microstrip filter is
4.29-4.31GHz, band connection frequency is (2-4.1) GHz＆ (4.55-12) GHz, and filtering performance is good.
Claims (6)
1. sapphire substrates microstrip filter, comprising sapphire medium substrate and be attached in sapphire medium substrate by leading
Microstrip transmission line (1) and resonance construction unit (2) that electric material is made, it is characterised in that：One end of the microstrip transmission line (1)
It is signal input part, the other end is signal output part；The resonance structure unit (2) is interdigitated resonance structure, and its quantity is extremely
Less for one and positioned at the side of microstrip transmission line (1), multiple resonance structure units line up one along microstrip transmission line (1) direction
Row；It is contactless between resonance structure unit (2) and microstrip transmission line (1) and between any two resonance structure unit (2)；It is micro-
Side on transmission line (1) away from resonance structure unit (2) is provided with least one second harmonic being made of an electrically conducting material
Suppress unit (3)；It is flute profile that the second harmonic suppresses unit (3), and each flute profile second harmonic suppresses the number of tooth in unit (3)
Amount is more than 2, and the adjacent interdental space of any two is equal.
2. sapphire substrates microstrip filter as claimed in claim 1, it is characterised in that：The conductive material be gold, silver,
Any one in copper, aluminium or several combinations.
3. sapphire substrates microstrip filter as claimed in claim 1, it is characterised in that：The sapphire medium substrate is indigo plant
Jewel single-chip.
4. sapphire substrates microstrip filter as claimed in claim 3, it is characterised in that：The crystal face of the single-crystal sapphire
The preferential selection order of orientation is a planar orientations, c planar orientations, r planar orientations, m planar orientations.
5. sapphire substrates microstrip filter as claimed in claim 1, it is characterised in that：The interdigitated resonance structure unit
(2) quantity is the odd number more than 1, and all interdigitated resonance structure unit equidistant arrangements.
6. sapphire substrates microstrip filter as claimed in claim 1, it is characterised in that：The sapphire medium substrate is a
The single-crystal sapphire of planar orientation；The quantity of interdigitated resonance structure unit (2) is 5,5 interdigitated resonance structure units
Size it is just the same and along transmission line direction equidistant arrangement in the side of transmission line；It is flute profile that second harmonic suppresses unit (3)
And the quantity of tooth is 3, the quantity of second harmonic suppression unit (3) of 3 flute profile is 4, and is separately positioned on adjacent with two
The relative position of resonance structure cell gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510006726.0A CN104485498B (en) | 2015-01-07 | 2015-01-07 | Sapphire substrates microstrip filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510006726.0A CN104485498B (en) | 2015-01-07 | 2015-01-07 | Sapphire substrates microstrip filter |
Publications (2)
| Publication Number | Publication Date |
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| CN104485498A CN104485498A (en) | 2015-04-01 |
| CN104485498B true CN104485498B (en) | 2017-06-23 |
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| CN201510006726.0A Expired - Fee Related CN104485498B (en) | 2015-01-07 | 2015-01-07 | Sapphire substrates microstrip filter |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104993196A (en) * | 2015-07-07 | 2015-10-21 | 深圳市西博泰科电子有限公司 | Radio-frequency band-pass filter |
| CN105514546B (en) * | 2016-01-26 | 2019-04-16 | 中国振华集团云科电子有限公司 | High degree of suppression bandstop filter |
| WO2019033377A1 (en) * | 2017-08-18 | 2019-02-21 | Telefonaktiebolaget Lm Ericsson (Publ) | Radio frequency power amplifier |
| CN112803128A (en) * | 2020-12-31 | 2021-05-14 | 江门职业技术学院 | Microstrip low-pass filter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1161759A (en) * | 1994-10-14 | 1997-10-08 | 康达特斯公司 | Method for design of frequency transformation apparatus and narrow-band filter |
| CN1433582A (en) * | 1999-12-01 | 2003-07-30 | 纳幕尔杜邦公司 | Tunable high temperature superconducting filter |
| US6751489B2 (en) * | 1998-05-15 | 2004-06-15 | E. I. Du Pont De Nemours And Company | High temperature superconductor mini-filters and mini-multiplexers with self-resonant spiral resonators |
| CN103956313A (en) * | 2014-05-07 | 2014-07-30 | 电子科技大学 | Miniaturized power gain equalizer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4315859B2 (en) * | 2004-05-19 | 2009-08-19 | 富士通株式会社 | Superconducting filter |
-
2015
- 2015-01-07 CN CN201510006726.0A patent/CN104485498B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1161759A (en) * | 1994-10-14 | 1997-10-08 | 康达特斯公司 | Method for design of frequency transformation apparatus and narrow-band filter |
| US6751489B2 (en) * | 1998-05-15 | 2004-06-15 | E. I. Du Pont De Nemours And Company | High temperature superconductor mini-filters and mini-multiplexers with self-resonant spiral resonators |
| CN1433582A (en) * | 1999-12-01 | 2003-07-30 | 纳幕尔杜邦公司 | Tunable high temperature superconducting filter |
| CN103956313A (en) * | 2014-05-07 | 2014-07-30 | 电子科技大学 | Miniaturized power gain equalizer |
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| CN104485498A (en) | 2015-04-01 |
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| CB03 | Change of inventor or designer information |
Inventor after: Wen Zhanfu Inventor after: Jia Pengle Inventor after: Huang Yongfei Inventor after: Long Liquan Inventor after: Li Sheng Inventor after: Zhang Feng Inventor after: Han Yucheng Inventor before: Huang Yongfei Inventor before: Li Sheng Inventor before: Jia Pengle Inventor before: Long Liquan Inventor before: Wen Zhanfu Inventor before: Zhang Feng Inventor before: Han Yucheng |
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