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CN104460140B - Array base palte and display device - Google Patents

Array base palte and display device Download PDF

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Publication number
CN104460140B
CN104460140B CN201510004809.6A CN201510004809A CN104460140B CN 104460140 B CN104460140 B CN 104460140B CN 201510004809 A CN201510004809 A CN 201510004809A CN 104460140 B CN104460140 B CN 104460140B
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electrode
pixel
layer
base palte
array base
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CN104460140A (en
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冯博
马禹
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BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
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Beijing BOE Display Technology Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1343Electrodes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133345Insulating layers
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明提供一种阵列基板及显示装置,属于显示技术领域,其可解决现有的阵列基板上的数据线的跳变电压较大造成阵列基板的显示不良的问题。本发明的阵列基板,其包括排列成矩阵的像素单元,每个所述像素单元中设置有相互绝缘的像素电极和公共电极,以及设置在所述像素电极所在层与所述共公共电极所在层之间的导电电极,所述导电电极与像素电极绝缘设置,且两者在基底上的投影至少部分重合,所述导电电极与所述公共电极电性连接。本发明的显示装置包括上述阵列基板。应用本发明的阵列基板的显示装置,显示效果明显改善。

The invention provides an array substrate and a display device, belonging to the field of display technology, which can solve the problem of poor display of the array substrate caused by a large jump voltage of a data line on the existing array substrate. The array substrate of the present invention includes pixel units arranged in a matrix, each of the pixel units is provided with a pixel electrode and a common electrode that are insulated from each other, and is provided between the layer where the pixel electrode is located and the layer where the common electrode is located. The conductive electrode in between is insulated from the pixel electrode, and the projections of the two on the substrate are at least partially overlapped, and the conductive electrode is electrically connected to the common electrode. The display device of the present invention includes the above-mentioned array substrate. The display effect of the display device using the array substrate of the present invention is obviously improved.

Description

阵列基板及显示装置Array substrate and display device

技术领域technical field

本发明属于显示技术领域,具体涉及一种阵列基板及显示装置。The invention belongs to the field of display technology, and in particular relates to an array substrate and a display device.

背景技术Background technique

液晶显示面板主要由阵列基板和彩膜基板对盒组成。其中,如图1所示,阵列基板上设有交叉排列呈网格状的栅线2和数据线3(因它们位于不同的层中,故交叉时不会导通),栅线2和数据线3的每个交叉位置限定一个像素单元1,从而多个像素单元排列成矩阵形式;对彩色液晶显示面板,每个像素单元1对应显示屏的一个子像素(又称亚像素),而靠在一起的红绿蓝三个子像素构成显示屏上的一个可见的像素;对非彩色显示器,一个像素单元1也可直接对应显示屏上的一个像素。A liquid crystal display panel is mainly composed of an array substrate and a color filter substrate pair box. Wherein, as shown in FIG. 1 , the array substrate is provided with gate lines 2 and data lines 3 which are arranged in a grid shape crosswise (because they are located in different layers, they will not conduct when they cross), the gate lines 2 and data lines Each intersection position of the line 3 defines a pixel unit 1, so that a plurality of pixel units are arranged in a matrix form; for a color liquid crystal display panel, each pixel unit 1 corresponds to a sub-pixel (also known as a sub-pixel) of the display screen, and by The three sub-pixels of red, green and blue constitute a visible pixel on the display screen; for an achromatic display, one pixel unit 1 can also directly correspond to one pixel on the display screen.

每个像素单元1包括一个薄膜晶体管11和一个与薄膜晶体管11漏极相连的像素电极12,一行像素单元1的薄膜晶体管11的栅极与同一根栅线2相连,一列像素单元1的薄膜晶体管11的源极与同一根数据线3相连。当某根栅线2导通时,只要控制各数据线3的信号即可使该栅线2所对应的一行像素单元1同时显示所需内容,因此只要使各根栅线2轮流导通(又称扫描),即可显示出所需内容。Each pixel unit 1 includes a thin film transistor 11 and a pixel electrode 12 connected to the drain of the thin film transistor 11, the gates of the thin film transistors 11 of a row of pixel units 1 are connected to the same gate line 2, and the thin film transistors of a column of pixel units 1 The source of 11 is connected to the same data line 3 . When a certain gate line 2 is turned on, as long as the signal of each data line 3 is controlled, a row of pixel units 1 corresponding to the gate line 2 can display the required content at the same time, so it is only necessary to make each gate line 2 turn on ( Also known as scanning), you can display what you want.

发明人发现现有技术中至少存在如下问题:当某一行像素单元被扫描完成后,此时选通该行像素单元的栅线2上的电位从高电位变为低电位(或者从低电位变为高电位),在该瞬间数据线3施加给与其对应的像素单元的数据电压信号将产生跳变,该数据线3上产生的跳变电压为ΔVp,本领域技术人员公知的是,ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc),其中,Cgs_on为栅源电容;Vgh为栅线施加的高电位;Vgl为栅线施加的低电位;Cst为像素电容;Clc为液晶电容。因此,减小跳变电压对于提高液晶显示器的显示效果是极其重要的。The inventor has found that at least the following problems exist in the prior art: when a certain row of pixel units is scanned, the potential on the gate line 2 that selects the row of pixel units changes from high potential to low potential (or from low potential to is a high potential), the data voltage signal applied to the corresponding pixel unit by the data line 3 will jump at this moment, and the jump voltage generated on the data line 3 is ΔVp. It is known to those skilled in the art that ΔVp= Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc), where Cgs_on is the gate-source capacitance; Vgh is the high potential applied to the gate line; Vgl is the low potential applied to the gate line; Cst is the pixel capacitance; Clc is the liquid crystal capacitance. Therefore, reducing the jump voltage is extremely important for improving the display effect of the liquid crystal display.

发明内容Contents of the invention

本发明所要解决的技术问题包括,针对现有的阵列基板存在的上述问题,提供一种可以减小阵列基板上的数据线的跳变电压,以及提高公共电极电压均一性的阵列基板及显示装置。The technical problems to be solved by the present invention include, aiming at the above-mentioned problems existing in the existing array substrate, providing an array substrate and a display device that can reduce the jump voltage of the data lines on the array substrate and improve the uniformity of the common electrode voltage .

解决本发明技术问题所采用的技术方案是一种阵列基板,其包括排列成矩阵的像素单元,每个所述像素单元中设置有相互绝缘的像素电极和公共电极,以及设置在所述像素电极所在层与所述共公共电极所在层之间的导电电极,The technical solution adopted to solve the technical problem of the present invention is an array substrate, which includes pixel units arranged in a matrix, each pixel unit is provided with a pixel electrode and a common electrode that are insulated from each other, and a a conductive electrode between the layer where the common electrode is located and the layer where the common electrode is located,

所述导电电极与像素电极绝缘设置,且两者在基底上的投影至少部分重合,所述导电电极与所述公共电极电性连接。The conductive electrode is insulated from the pixel electrode, and the projections of the two on the substrate are at least partially overlapped, and the conductive electrode is electrically connected to the common electrode.

优选的是,所述阵列基板还包括交叉且绝缘设置的多条栅线和多条数据线,每个所述像素单元连接一条数据线和一条栅线。Preferably, the array substrate further includes a plurality of gate lines and a plurality of data lines intersecting and insulated, and each of the pixel units is connected to one data line and one gate line.

进一步优选的是,两相邻行所述栅线同时连接同一行所述像素单元,每条数据线同时连接两相邻列所述像素单元,且同一行像素单元中与同一数据线连接的两个所述像素单元连接的不同栅线。Further preferably, the gate lines in two adjacent rows are connected to the pixel units in the same row at the same time, and each data line is connected to the pixel units in two adjacent columns at the same time, and the two pixel units in the same row of pixel units connected to the same data line different grid lines connected to each of the pixel units.

更进一步优选的是,所述导电电极设于连接两条不同数据线的两相邻列像素单元之间。Still further preferably, the conductive electrode is arranged between two adjacent columns of pixel units connected to two different data lines.

进一步优选的是,所述公共电极与所述栅线同层设置,且材料相同。Further preferably, the common electrode and the gate line are arranged in the same layer and made of the same material.

进一步优选的是,每个所述像素单元包括一薄膜晶体管,所述薄膜晶体管的源极连接所述数据线,漏极连所述接像素电极,栅极连接所述栅线。Further preferably, each of the pixel units includes a thin film transistor, the source of the thin film transistor is connected to the data line, the drain is connected to the pixel electrode, and the gate is connected to the gate line.

更进一步优选的是,在所述像素电极所在层与所述公共电极所在层之间还设置有栅极绝缘层和钝化层;所述导电电极设置在所述栅极绝缘层与所述钝化层之间,且所述导电电极通过贯穿所述栅极绝缘层的第一过孔与所述公共电极电性连接。More preferably, a gate insulating layer and a passivation layer are also arranged between the layer where the pixel electrode is located and the layer where the common electrode is located; the conductive electrode is arranged between the gate insulating layer and the passivation layer. between the gate insulating layers, and the conductive electrode is electrically connected to the common electrode through a first via hole penetrating through the gate insulating layer.

再进一步优选的是,所述薄膜晶体管的漏极通过贯穿钝化层的第二过孔与所述像素电极电性连接。Still further preferably, the drain of the thin film transistor is electrically connected to the pixel electrode through a second via hole penetrating the passivation layer.

解决本发明技术问题所采用的技术方案是一种显示装置,其包括上述阵列基板。The technical solution adopted to solve the technical problem of the present invention is a display device, which includes the above-mentioned array substrate.

本发明具有如下有益效果:The present invention has following beneficial effect:

在本发明的阵列基板中,通过在像素电极与公共电极之间形成与公共电极电性连接的导电电极,并使导电电极与像素电极至少部分重叠,以使导电电极与公共电极的连接结构和像素电极形成像素电容Cst。可以理解的是,导电电极比公共电极距像素电极之间的距离较近,因此减小了构成像素电容Cst的两极板之间的距离,从而增大了像素电容Cst的值,根据跳变电压ΔVp的计算公式:ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc),其中,Cgs_on为栅源电容;Vgh为栅线施加的高电位;Vgl为栅线施加的低电位;Cst为像素电容;Clc为液晶电容,可知像素电容Cst的值增大,跳变电压ΔVp减小,进而解决了现有技术中由于跳变电压ΔVp较大,所导致的显示不良的问题。In the array substrate of the present invention, by forming a conductive electrode electrically connected to the common electrode between the pixel electrode and the common electrode, and at least partially overlapping the conductive electrode with the pixel electrode, the connection structure between the conductive electrode and the common electrode The pixel electrode forms a pixel capacitance Cst. It can be understood that the conductive electrode is closer to the pixel electrode than the common electrode, thus reducing the distance between the two plates constituting the pixel capacitance Cst, thereby increasing the value of the pixel capacitance Cst, according to the jump voltage The calculation formula of ΔVp: ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc), where Cgs_on is the gate-source capacitance; Vgh is the high potential applied to the gate line; Vgl is the low potential applied to the gate line; Cst is the pixel capacitance; Clc is the liquid crystal capacitance, it can be seen that the value of the pixel capacitance Cst increases, and the jump voltage ΔVp decreases, thereby solving the problem of poor display caused by the large jump voltage ΔVp in the prior art.

同时,在本发明的阵列基板中,由于导电电极与公共电极电性连接,因此导电电极与公共电极的连接结构相当于现有技术中的公共电极,而导电电极与公共电极并联,故较现有技术中的公共电极的电阻而言,本发明中的导电电极与公共电极的连接结构的电阻较小,因此可以提高显示面板的公共电极电压的均一性。At the same time, in the array substrate of the present invention, since the conductive electrodes are electrically connected to the common electrodes, the connection structure between the conductive electrodes and the common electrodes is equivalent to the common electrodes in the prior art, and the conductive electrodes are connected in parallel with the common electrodes, so it is more advanced. Compared with the resistance of the common electrode in the prior art, the resistance of the connection structure between the conductive electrode and the common electrode in the present invention is relatively small, so the uniformity of the voltage of the common electrode of the display panel can be improved.

本发明所提供的显示装置,由于包括上述的阵列基板,故其显示效果明显得到改善,品质较好。The display device provided by the present invention includes the above-mentioned array substrate, so its display effect is obviously improved and its quality is better.

附图说明Description of drawings

图1为现有的阵列基板的结构示意图;FIG. 1 is a schematic structural view of an existing array substrate;

图2为本发明的实施例1的阵列基板的一种结构示意图;FIG. 2 is a schematic structural view of the array substrate according to Embodiment 1 of the present invention;

图3为图2的A-A'的剖视图;Fig. 3 is a sectional view of AA' of Fig. 2;

图4为本发明的实施例1的阵列基板的另一种结构示意图;FIG. 4 is another schematic structural view of the array substrate according to Embodiment 1 of the present invention;

图5为图4的A-A'的剖视图。FIG. 5 is a cross-sectional view of AA' of FIG. 4 .

其中附图标记为:1、像素单元;2、栅线;3、数据线;11、薄膜晶体管;12、像素电极;101、基底;102、公共电极;103、栅极绝缘层;104、导电电极;105、钝化层。The reference signs are: 1, pixel unit; 2, gate line; 3, data line; 11, thin film transistor; 12, pixel electrode; 101, base; 102, common electrode; 103, gate insulating layer; 104, conductive Electrode; 105, passivation layer.

具体实施方式detailed description

为使本领域技术人员更好地理解本发明的技术方案,下面结合附图和具体实施方式对本发明作进一步详细描述。In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.

一种阵列基板其包括排列成矩阵的像素单元,每个所述像素单元中设置有相互绝缘的像素电极和公共电极,以及设置在所述像素电极所在层与所述共公共电极所在层之间的导电电极,所述导电电极与像素电极绝缘设置,且两者在基底上的投影至少部分重合,所述导电电极与所述公共电极电性连接。An array substrate comprising pixel units arranged in a matrix, each pixel unit is provided with a pixel electrode and a common electrode insulated from each other, and is provided between the layer where the pixel electrode is located and the layer where the common electrode is located. The conductive electrode is insulated from the pixel electrode, and the projections of the two on the substrate are at least partially overlapped, and the conductive electrode is electrically connected to the common electrode.

本领域技术人员可以理解的是,阵列基板上的像素电容Cst的两极板是由像素电极和公共电极的重叠部分所形成的,而像素电容Cst的值的大小与像素电极与公共电极之间的间距成反比,即像素电极与公共电极之间的间距越大像素电容Cst的值越小,否则反之。而在本实施例的阵列基板中,通过在像素电极与公共电极之间形成与公共电极电性连接的导电电极,并使导电电极与像素电极至少部分重叠,以使导电电极与公共电极的连接结构和像素电极形成像素电容Cst。可以理解的是,导电电极比公共电极距像素电极之间的距离较近,因此减小了构成像素电容Cst的两极板之间的距离,从而增大了像素电容Cst的值,根据跳变电压ΔVp的计算公式:ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc),其中,Cgs_on为栅源电容;Vgh为栅线施加的高电位;Vgl为栅线施加的低电位;Cst为像素电容;Clc为液晶电容,可知像素电容Cst的值增大,跳变电压ΔVp减小,进而解决了现有技术中由于跳变电压ΔVp较大,所导致的显示不良的问题。Those skilled in the art can understand that the bipolar plates of the pixel capacitance Cst on the array substrate are formed by the overlapping parts of the pixel electrode and the common electrode, and the value of the pixel capacitance Cst is related to the distance between the pixel electrode and the common electrode. The spacing is inversely proportional, that is, the larger the spacing between the pixel electrode and the common electrode, the smaller the value of the pixel capacitance Cst, otherwise the reverse is true. In the array substrate of this embodiment, by forming a conductive electrode electrically connected to the common electrode between the pixel electrode and the common electrode, and at least partially overlapping the conductive electrode with the pixel electrode, the connection between the conductive electrode and the common electrode The structure and the pixel electrode form a pixel capacitance Cst. It can be understood that the conductive electrode is closer to the pixel electrode than the common electrode, thus reducing the distance between the two plates constituting the pixel capacitance Cst, thereby increasing the value of the pixel capacitance Cst, according to the jump voltage The calculation formula of ΔVp: ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc), where Cgs_on is the gate-source capacitance; Vgh is the high potential applied to the gate line; Vgl is the low potential applied to the gate line; Cst is the pixel capacitance; Clc is the liquid crystal capacitance, it can be seen that the value of the pixel capacitance Cst increases, and the jump voltage ΔVp decreases, thereby solving the problem of poor display caused by the large jump voltage ΔVp in the prior art.

同时,在本实施例的阵列基板中,由于导电电极与公共电极电性连接,因此导电电极与公共电极的连接结构相当于现有技术中的公共电极,而导电电极与公共电极并联,故较现有技术中的公共电极的电阻而言,本实施例中的导电电极与公共电极的连接结构的电阻较小,因此可以提高显示面板的公共电极电压的均一性。At the same time, in the array substrate of this embodiment, since the conductive electrodes are electrically connected to the common electrodes, the connection structure between the conductive electrodes and the common electrodes is equivalent to the common electrodes in the prior art, and the conductive electrodes are connected in parallel with the common electrodes, so Compared with the resistance of the common electrode in the prior art, the resistance of the connection structure between the conductive electrode and the common electrode in this embodiment is relatively small, so the uniformity of the voltage of the common electrode of the display panel can be improved.

以下结合具体实施方式,对本实施例的阵列基板进行描述。The array substrate of this embodiment will be described below in combination with specific implementation methods.

实施例1:Example 1:

本实施例提供一种阵列基板,其包括交叉设置的多条栅线和多条数据线,排列成矩阵的像素单元,每个所述像素单元中设置有相互绝缘的像素电极和公共电极,以及设置在所述像素电极所在层与所述共公共电极所在层之间的导电电极,所述导电电极与像素电极绝缘设置,且两者在基底上的投影至少部分重合,所述导电电极与所述公共电极电性连接。其中,每个像素单元连接一条栅线和一条数据线。This embodiment provides an array substrate, which includes a plurality of gate lines and a plurality of data lines arranged crosswise, pixel units arranged in a matrix, each pixel unit is provided with a pixel electrode and a common electrode insulated from each other, and A conductive electrode disposed between the layer where the pixel electrode is located and the layer where the common electrode is located, the conductive electrode is insulated from the pixel electrode, and the projections of the two on the substrate at least partially overlap, the conductive electrode and the pixel electrode are at least partially overlapped. The common electrode is electrically connected. Wherein, each pixel unit is connected with a gate line and a data line.

如图2、3所示,作为本实施例的一种优选方式,每一行像素单元1连接同一条栅线2,每一列像素单元1连接同一条数据线3。其中,每个像素单元1包括一个薄膜晶体管11,薄膜晶体管11的源极连接数据线3,漏极连接像素电极12。As shown in FIGS. 2 and 3 , as a preferred mode of this embodiment, each row of pixel units 1 is connected to the same gate line 2 , and each column of pixel units 1 is connected to the same data line 3 . Wherein, each pixel unit 1 includes a thin film transistor 11 , the source of the thin film transistor 11 is connected to the data line 3 , and the drain is connected to the pixel electrode 12 .

下面结合制备该阵列基板的方法,对该阵列基板的结构进行进一步的阐述。The structure of the array substrate will be further described below in combination with the method for preparing the array substrate.

首先,通过构图工艺在基底101上,形成每个像素单元1中的薄膜晶体管11的栅极和栅极连接的栅线2,优选地,与此同时还形成有各个像素单元1的公共电极102,以及将各个公共电极102连接在一起的公共电极线(图中未示出);此时,沉积栅极绝缘层103;在栅极绝缘层103上方通过构图工艺形成薄膜晶体管11有源区的图形;然后,通过构图工艺形成贯穿栅极绝缘层103,用于将公共电极102与导电电极104电性连接的第一过孔;在有源层所在层上方通过构图工艺形成薄膜晶体管11源极、漏极以及与源极连接的数据线3的图形,优选地与此同时还形成有导电电极104,至此完成导电电极104与公共电极102的电性连接;之后形成钝化层105;接下来通过构图工艺形成贯穿钝化层105,用于薄膜晶体管11的漏极与像素电极12连接的第二过孔,最后形成像素电极12,此时像素电极12通过第二过孔与薄膜晶体管11的漏极电性连接。Firstly, on the substrate 101 through a patterning process, form the gate of the thin film transistor 11 in each pixel unit 1 and the gate line 2 connected to the gate. Preferably, the common electrode 102 of each pixel unit 1 is also formed at the same time , and a common electrode line (not shown) that connects each common electrode 102 together; at this time, deposit a gate insulating layer 103; form the active region of the thin film transistor 11 through a patterning process on the gate insulating layer 103 pattern; then, form the first via hole through the gate insulating layer 103 through a patterning process for electrically connecting the common electrode 102 and the conductive electrode 104; form the source of the thin film transistor 11 through a patterning process on the layer where the active layer is located , the drain electrode and the pattern of the data line 3 connected to the source electrode, preferably at the same time, a conductive electrode 104 is also formed, so far the electrical connection between the conductive electrode 104 and the common electrode 102 is completed; then the passivation layer 105 is formed; next Form through the passivation layer 105 through the patterning process, the second via hole used to connect the drain of the thin film transistor 11 and the pixel electrode 12, and finally form the pixel electrode 12, at this time, the pixel electrode 12 is connected to the thin film transistor 11 through the second via hole The drain is electrically connected.

由上可知,优选地,公共电极102与栅线2同层设置,且材料相同;导电电极104与数据线3同层设置,且材料相同。此时公共电极102与栅线2可以采用一次构图工艺形成,导电电极104与数据线3可以采用一次构图工艺形成,故可以节省工艺步骤,提高生产效率。当然导电电极104也是可以单独制备的,只要是设于像素电极12与公共电极102之间,且与像素电极12至少部分重合即可。It can be seen from the above that, preferably, the common electrode 102 is arranged on the same layer as the gate line 2 and made of the same material; the conductive electrode 104 is arranged on the same layer as the data line 3 and made of the same material. At this time, the common electrodes 102 and the gate lines 2 can be formed by one patterning process, and the conductive electrodes 104 and the data lines 3 can be formed by one patterning process, so process steps can be saved and production efficiency can be improved. Of course, the conductive electrode 104 can also be prepared separately, as long as it is disposed between the pixel electrode 12 and the common electrode 102 and at least partially overlaps with the pixel electrode 12 .

如图4、5所示,作为本实施例的另一种优选方式,两相邻行所述栅线2同时连接同一行所述像素单元1,每条数据线3同时连接两相邻列所述像素单元1,且同一行像素单元1中与同一数据线3连接的两个所述像素单元1连接的不同栅线2。其中,每个像素单元1包括一个薄膜晶体管11,薄膜晶体管11的源极连接数据线3,漏极连接像素电极12。可以理解的是,该种这阵列基板上的像素单元1的排布方式为双栅结构。As shown in Figures 4 and 5, as another preferred mode of this embodiment, the gate lines 2 in two adjacent rows are connected to the pixel units 1 in the same row at the same time, and each data line 3 is connected to the pixel units in two adjacent columns at the same time. The above-mentioned pixel units 1, and the different gate lines 2 connected to the two pixel units 1 connected to the same data line 3 in the same row of pixel units 1. Wherein, each pixel unit 1 includes a thin film transistor 11 , the source of the thin film transistor 11 is connected to the data line 3 , and the drain is connected to the pixel electrode 12 . It can be understood that the arrangement of the pixel units 1 on the array substrate is a double gate structure.

优选地,导电电极104设于连接两条不同数据线3的两相邻列像素单元1之间。也就是说每个导电电极104跨越与两个像素单元1中的像素电极12均有重叠。之所以如此设置是因为,在两相邻的像素单元1之间是存在一定的间隙的,此时将导电电极104设于此处不仅对该阵列基板的开口率影响较少,还可以遮挡两像素单元1之间的缝隙,防止漏光,从而可进一步减小黑矩阵的面积,提高开口率。需要说明的是,在本实施例中对于导电电极104的形状和大小并不进行限定。Preferably, the conductive electrode 104 is disposed between two adjacent columns of pixel units 1 connected to two different data lines 3 . That is to say, each conductive electrode 104 spans and overlaps the pixel electrodes 12 in two pixel units 1 . The reason for this setting is that there is a certain gap between two adjacent pixel units 1, at this time, setting the conductive electrode 104 here not only has less influence on the aperture ratio of the array substrate, but also can block the gap between the two adjacent pixel units 1. The gap between the pixel units 1 prevents light leakage, thereby further reducing the area of the black matrix and increasing the aperture ratio. It should be noted that the shape and size of the conductive electrodes 104 are not limited in this embodiment.

具体的,在像素电极12所在层与公共电极102所在层之间还设置有栅极绝缘层103和钝化层105,导电电极104设于栅极绝缘层103和钝化层105之间,其中,导电电极104通过贯穿栅极绝缘层103的第一过孔与公共电极102电连接,薄膜晶体管11的漏极通过贯穿钝化层105的第二过孔与像素电极12电性连接。Specifically, a gate insulating layer 103 and a passivation layer 105 are also provided between the layer where the pixel electrode 12 is located and the layer where the common electrode 102 is located, and the conductive electrode 104 is provided between the gate insulating layer 103 and the passivation layer 105, wherein The conductive electrode 104 is electrically connected to the common electrode 102 through the first via hole penetrating the gate insulating layer 103 , and the drain of the thin film transistor 11 is electrically connected to the pixel electrode 12 through the second via hole penetrating the passivation layer 105 .

优选地,导电电极104与数据线3同层设置,且材料相同,公共电极102与栅线2同层设置,且材料相同。此时,可以将导电电极104和数据线3采用一次构图工艺形成,公共电极102与栅线2采用一次构图工艺形成,故可以大大节约工艺步骤,提高生产效率。Preferably, the conductive electrode 104 is arranged on the same layer as the data line 3 and made of the same material, and the common electrode 102 is arranged on the same layer as the gate line 2 and made of the same material. At this time, the conductive electrodes 104 and the data lines 3 can be formed by a single patterning process, and the common electrodes 102 and the gate lines 2 can be formed by a single patterning process, thereby greatly saving process steps and improving production efficiency.

需要说明的是,该种优选方式的制备方法与上述方式的制备方法的顺序是大致可相同,只是所形成的阵列基板上各个结构的位置是不同的,因此不再详细描述。It should be noted that the order of the preparation method of this preferred mode is roughly the same as that of the above-mentioned method, but the position of each structure on the formed array substrate is different, so it will not be described in detail.

综上,本实施例中所提供的阵列基板,导电电极104比公共电极102距像素电极12之间的距离较近,因此减小了构成像素电容Cst的两极板之间的距离,从而增大了像素电容Cst的值,根据跳变电压ΔVp的计算公式:ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc),其中,Vgh为栅线2施加的高电位;Vgl为栅线2施加的低电位;Cst为像素电容;Clc为液晶电容,可知像素电容Cst的值增大,跳变电压ΔVp减小,进而解决了现有技术中由于跳变电压ΔVp较大,所导致的显示不良的问题。To sum up, in the array substrate provided in this embodiment, the distance between the conductive electrode 104 and the pixel electrode 12 is closer than that of the common electrode 102, so the distance between the two plates constituting the pixel capacitance Cst is reduced, thereby increasing The value of the pixel capacitance Cst is calculated according to the calculation formula of the jump voltage ΔVp: ΔVp=Cgs_on*(Vgh-Vgl)/(Cgs_on+Cst+Clc), wherein, Vgh is the high potential applied by the gate line 2; Vgl is the gate line 2 applied low potential; Cst is the pixel capacitance; Clc is the liquid crystal capacitance, it can be seen that the value of the pixel capacitance Cst increases, and the jump voltage ΔVp decreases, thereby solving the problem caused by the large jump voltage ΔVp in the prior art Show bad questions.

同时,在本实施例的阵列基板中,由于导电电极104与公共电极102电性连接,因此导电电极104与公共电极102的连接结构相当于现有技术中的公共电极102,而导电电极104与公共电极102并联,故较现有技术中的公共电极102的电阻而言,本实施例中的导电电极104与公共电极102的连接结构的电阻较小,因此可以提高显示面板的公共电极102电压的均一性。Meanwhile, in the array substrate of this embodiment, since the conductive electrode 104 is electrically connected to the common electrode 102, the connection structure between the conductive electrode 104 and the common electrode 102 is equivalent to the common electrode 102 in the prior art, and the conductive electrode 104 is connected to the common electrode 102. The common electrodes 102 are connected in parallel, so compared with the resistance of the common electrodes 102 in the prior art, the resistance of the connection structure between the conductive electrodes 104 and the common electrodes 102 in this embodiment is smaller, so the voltage of the common electrodes 102 of the display panel can be increased of uniformity.

实施例2:Example 2:

本实施例提供一种显示装置,其包括上述任意一实施例所述的阵列基板。This embodiment provides a display device, which includes the array substrate described in any one of the above embodiments.

本发明实施例还提供了一种显示装置,其包括上述任意一种阵列基板。所述显示装置可以为:液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。An embodiment of the present invention also provides a display device, which includes any one of the above-mentioned array substrates. The display device may be any product or component with a display function such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, and the like.

由于本实施例的显示装置采用上述的阵列基板,因此其开口率大,能耗低,刷新率高,显示质量好。Since the display device of this embodiment adopts the above-mentioned array substrate, it has a large aperture ratio, low energy consumption, high refresh rate, and good display quality.

可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。It can be understood that, the above embodiments are only exemplary embodiments adopted for illustrating the principle of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also regarded as the protection scope of the present invention.

Claims (7)

1. a kind of array base palte, it includes the pixel cell for being arranged in matrix, is provided with each pixel cell mutually absolutely The pixel electrode and public electrode of edge, it is characterised in that the array base palte also includes being arranged on layer where the pixel electrode With the public electrode conductive electrode between layers,
The conductive electrode and pixel electrode insulation set, and both projections in substrate at least partly coincidence, the conduction Electrode is electrically connected with the public electrode;
The array base palte also includes a plurality of grid line and a plurality of data lines of intersection and insulation set, and each pixel cell connects Connect a data line and a grid line;
Grid line described in two adjacent lines is connected with pixel cell described in a line simultaneously, is connected simultaneously described in two adjacent columns per data line Pixel cell, and with the different grid lines connected in one-row pixels unit from two pixel cells that same data wire is connected;
The conductive electrode is between two adjacent column pixel cells of two different pieces of information lines of connection.
2. array base palte according to claim 1, it is characterised in that the conductive electrode is set with the data wire with layer Put, and material is identical.
3. array base palte according to claim 1, it is characterised in that the public electrode is set with the grid line with layer, And material is identical.
4. array base palte according to claim 1, it is characterised in that each pixel cell includes a film crystal Pipe, the source electrode of the thin film transistor (TFT) connects the data wire, and drain electrode connection pixel electrode, grid connects the grid line.
5. array base palte according to claim 4, it is characterised in that layer and the common electrical where the pixel electrode Pole is additionally provided with gate insulator and passivation layer between layers;The conductive electrode be arranged on the gate insulator with it is described Between passivation layer, and the conductive electrode is electrically connected by the first via through the gate insulator and the public electrode Connect.
6. array base palte according to claim 5, it is characterised in that the drain electrode of the thin film transistor (TFT) passes through through passivation Second via of layer is electrically connected with the pixel electrode.
7. a kind of display device, it is characterised in that the display device includes the array described in any one in claim 1-6 Substrate.
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