CN104451559A - Vacuum arc evaporation method and apparatus, and film, article and product manufactured by the method - Google Patents
Vacuum arc evaporation method and apparatus, and film, article and product manufactured by the method Download PDFInfo
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- CN104451559A CN104451559A CN201410386906.1A CN201410386906A CN104451559A CN 104451559 A CN104451559 A CN 104451559A CN 201410386906 A CN201410386906 A CN 201410386906A CN 104451559 A CN104451559 A CN 104451559A
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- 238000000034 method Methods 0.000 title claims description 34
- 238000001704 evaporation Methods 0.000 title abstract description 11
- 239000010406 cathode material Substances 0.000 claims abstract description 43
- 238000007599 discharging Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 230000008676 import Effects 0.000 claims description 84
- 238000007740 vapor deposition Methods 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 30
- 239000011248 coating agent Substances 0.000 abstract description 10
- 238000000576 coating method Methods 0.000 abstract description 10
- 230000008020 evaporation Effects 0.000 abstract description 7
- 238000010891 electric arc Methods 0.000 abstract description 4
- 239000004429 Calibre Substances 0.000 abstract 1
- 230000007246 mechanism Effects 0.000 description 15
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000000981 epithelium Anatomy 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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Abstract
The invention provides a vacuum arc evaporation method and apparatus, and a film, an article and a product which are manufactured by the vacuum arc evaporation method, even a heavy-calibre cathode is used, a cathode material on the cathode surface can be uniformly consumed to improve cathode utilization efficiency, so that coating cost can be reduced. The vacuum arc evaporation method uses arc discharge to enable the cathode material to evaporate and forms a film on a substrate, current leading-in terminals used for leading current in the cathode are configured at multiple positions, a discharge current flows through the cathode material, arc discharges, so that an evaporation film is formed on the substrate. The vacuum arc evaporation apparatus using the arc discharging to enable the cathode material to evaporate and forming the film on the substrate is configured that the current leading-in terminals used for leading current in the cathode are configured at the multiple positions, the discharge current flows through the cathode material, the arc discharges, so that the evaporation film is formed on the substrate.
Description
Technical field
The present invention relates to a kind of vacuum arc vapor deposition method, vacuum arc vapor deposition device and the film using vacuum arc vapor deposition method to manufacture and article.
Background technology
PCVD (Chemical Vapor Deposition, CVD) method, vacuum vapour deposition, sputter (sputtering) method, vacuum arc vapor deposition method etc. use isoionic surface treatment method to be widely used as being formed on the surface of instrument, mould, sliding material etc. the method for wear resistance (abrasion resistance) epithelium, and are also widely utilized in the field such as mechanical component and electronic component.
Wherein, vacuum arc vapor deposition method is following film, namely, make to produce arc-over (arc discharge) between anode and negative electrode, cathode material is evaporated also, and evaporation is in base material, and the method not only plasma density is high, rate of ionization is also far above other sputtering methods, be such as less than 1% when other sputtering methods etc., in contrast, the rate of ionization of described method is 60% ~ 70%.
Therefore, vacuum arc vapor deposition method has following feature: easily controlling diaphragm stress, and effectively can form mixolimnion and form the high film of adhesion (adhesion) in the interface between surface treatment base material and required film, in addition, productivity is also outstanding, so be used for cutting tool, sliding part etc. (such as patent documentation 1).
The basic comprising of vacuum arc vapor deposition device is shown in Fig. 5.As shown in Figure 5, vacuum arc vapor deposition device comprises vacuum chamber (vacuum chamber) 1, negative electrode 2, base material 3, power supply 4, power supply 7, backing plate (packing plate) 6, electric current importing terminal 8 and base material frame (holder) 9.In this, power supply 4 is the power supplys applying negative potential via base material frame 9 pairs of base materials 3, and power supply 7 is the power supplys via electric current importing terminal 8, the negative electrode 2 being held in backing plate 6 being applied to negative potential.In addition, these power supplys use direct supply or the pulse power.In addition, vacuum chamber 1 is retained as earthing potential.
The film forming of the vacuum arc vapor deposition device of described formation is used to carry out as follows.First, produce arc-over between the negative electrode 2 of negative potential and the vacuum chamber 1 of ground connection and form plasma 5 being endowed by power supply 7, making cathode material make cathode material ionization from the surface evaporation of negative electrode 2.Ionized cathode material be put into surface that biasing is the base material 3 of negative potential and on base material 3 film forming.
[background technology document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2012-92380 publication
Summary of the invention
The problem that invention will solve
In vacuum arc vapor deposition method as above, in recent years, in order to reduce costs, attempt that negative electrode is set to more heavy caliber and carry out film forming, but because be difficult to make the consumption of cathode material to keep evenly, so there is following worry at bigbore cathode surface: the utilising efficiency reduction of negative electrode causes coating cost (coatingcost) to be risen on the contrary.
Therefore, problem of the present invention is to provide a kind of vacuum arc vapor deposition technology, even if when using bigbore negative electrode, the cathode material of cathode surface also can be made to consume equably and promote the utilising efficiency of negative electrode, thus reduces coating cost.
Solve the means of problem
The present inventor, in vacuum arc vapor deposition technology in the past, when using bigbore negative electrode, is difficult to make the consumption of cathode material keep uniform reason at cathode surface, based on various experiment, has carried out studying with keen determination.Result is recognized in vacuum arc vapor deposition technology in the past, when using bigbore negative electrode, is owing to cannot controlling arc spot (arc spot) exactly, being just difficult to the even consumption realizing cathode material.
That is, when using bigbore negative electrode, magnetic field must be used to control arc spot more accurately, therefore having the situation of the rear side near center location configuration magnetic field generation mechanisms at negative electrode.Fig. 6 (a), Fig. 6 (b) are the figure of an example of the configuration that this magnetic field generation mechanisms is described, magnetic field generation mechanisms 11 is configured in the rear side near center location of negative electrode 2, and control arc spot exactly by rotating.In addition, in figure 6, Fig. 6 (a) is side-view, and Fig. 6 (b) is the A-A ＇ arrow view of Fig. 6 (a).
But, when by this way magnetic field generation mechanisms 11 being configured at the rear side near center location of negative electrode 2, different from the situation of Fig. 5, as shown in Figure 7, configuration is used for applying from power supply 7 anticathode 2 negative potential near the central authorities of backing plate 6 or negative electrode 2 electric current terminal 8 cannot be imported.
As described, when electric current importing terminal is not configured near the central authorities of negative electrode, discharging current flow into the magnetic field produced when electric current imports terminal can leak to cathode surface.And, if described in the magnetic field that spills strong, impact is brought in the magnetic field being used for controlling arc spot that just can be formed to magnetic field generation mechanisms, makes electric current import the localized variation producing magnetic field near terminal.Specifically, because of two kinds of magneticinterference, the magnetic field being used for controlling arc spot dies down partly, and the speed of arc spot is slower than other positions, the consumption aggravation of the cathode material at described position.
As a result, the control of arc spot becomes inaccurate, is difficult to the uniform consumption realizing cathode material at cathode surface, and the utilising efficiency of negative electrode reduces.
Therefore, the present inventor have studied following method with keen determination by various experiment, that is, utilize discharging current, weakens to import at electric current to produce near terminal and to leak to the magnetic field of the face side of negative electrode, and the impact of reduction on the magnetic field utilizing magnetic field generation mechanisms to be formed.
Found that, terminal is imported by the electric current importing position as electric current in the configuration of multiple positions, can weaken to import at electric current and to produce near terminal and to leak to the magnetic field of the face side of negative electrode, and the impact that can reduce the magnetic field utilizing magnetic field generation mechanisms to be formed, thus arc spot can be controlled exactly when arc-over.
That is, by importing terminal at multiple position configuration electric current, and configure electric current at a position and import compared with the situation of terminal, the discharging current flowing into the electric current importing terminal at each position diminishes.Correspondingly, import at electric current the magnetic field produced near terminal because of discharging current and also die down, the magnetic field leaking to cathode surface also dies down.Result, the impact in the magnetic field formed utilizing magnetic field generation mechanisms diminishes, and the localized variation that the magnetic field for controlling arc spot produces diminishes, therefore, arc spot can be controlled roughly exactly, thus cathode material can be consumed roughly equably at cathode surface.
And known electric current imports terminal arrangement must be more, the impact that just more can reduce the magnetic field utilizing magnetic field generation mechanisms to be formed, and cathode surface can be made more uniformly to consume, thus can promote the utilising efficiency of negative electrode further.
In addition, can reduce to leak to the magnetic field of cathode surface to the impact in the magnetic field utilizing magnetic field generation mechanisms to be formed as long as known, the configuration that described multiple electric current imports terminal is not defined as symmetry, asymmetry.
Secondly, the present inventor is studied the preferred configuration position that described multiple electric current imports terminal.
Result is recognized, not only electric current is being imported terminal arrangement at multiple position, but when being configured in the summit of the regular polygon such as square or regular pentagon, import at each electric current and to produce near terminal and the magnetic field leaking to the face side of negative electrode spatially becomes even, the localized variation that the magnetic field for controlling arc spot produces can be reduced further, therefore, for arc spot control be more preferably.
Specifically, such as, when electric current being imported the summit of terminal arrangement at square, as long as relative to through cathode center and the position configuration electric current of mutually orthogonal two straight lines and symmetry imports terminal.In addition, described " regular polygon " is not limited to proper regular polygon, also can be roughly regular polygon.
And when configuring electric current and importing terminal, preferably not electric current is imported terminal arrangement becomes point-like, but the electric current that configuration is formed as the planar of the area with the fixed size such as round shape or arcuation imports terminal.When being configured with the electric current being formed as the large planar of area and importing terminal, the contact area that electric current imports terminal and negative electrode can be increased, therefore, electric current imports the magnetic field produced near terminal and dies down further, and the magnetic field leaking to cathode surface dies down further.As a result, the impact in the magnetic field utilizing magnetic field generation mechanisms to be formed is diminished further.
In addition, when electric current is imported terminal be formed as banded with further expand electric current import terminal area thus in large area covered cathode surface, even if an electric current imports terminal, also the contact area that electric current imports terminal and negative electrode can be increased, therefore, terminal need not be imported at multiple position configuration electric current, and the magnetic field leaking to cathode surface from electric current importing terminal can be weakened.In addition, importing terminal by forming electric current with this kind of big area, spilling at cathode surface field homogeneity, therefore can reduce the impact on the magnetic field utilizing magnetic field generation mechanisms to be formed further.Be formed as banded electric current import terminal as this, the electric current can enumerating the shape of the shape of ring-type or the part shortcoming of ring-type imports terminal or the shape along the roughly circumference of regular polygon shape or the electric current along the roughly shape of the part shortcoming of the shape of the circumference of regular polygon shape and imports terminal.
The embodiment of 1st to the 12nd of the present invention is the embodiment based on described opinion.
The embodiment of 1st of the present invention is a kind of vacuum arc vapor deposition method,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Terminal is imported by being used for the electric current that anticathode imports electric current in the configuration of multiple positions, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate.
And the embodiment of 2nd of the present invention is the vacuum arc vapor deposition method according to 1st of the present invention,
The center importing terminal with the described electric current mode consistent with the summit of roughly regular polygon configures described electric current and imports terminal.
The embodiment of 3rd of the present invention is the vacuum arc vapor deposition method according to 1st or the 2nd of the present invention,
It is that the electric current being formed as planar imports terminal that described electric current imports terminal.
The embodiment of 4th of the present invention is a kind of vacuum arc vapor deposition method,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, the part that described electric current importing terminal is formed as the shape or ring-type with ring-type is the band shape of the shape of shortcoming.
The embodiment of 5th of the present invention is a kind of vacuum arc vapor deposition method,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, described electric current imports terminal and is formed as having the shape along the roughly circumference of regular polygon shape or the band shape along the roughly shape of the part shortcoming of the shape of the circumference of regular polygon shape.
In addition, the embodiment of 6th of the present invention is a kind of vacuum arc vapor deposition device,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Be configured to import terminal by being used for the electric current that anticathode imports electric current in the configuration of multiple positions, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate.
And the embodiment of 7th of the present invention is the vacuum arc vapor deposition device according to 6th of the present invention,
The mode that described electric current imports terminal imports terminal center with described electric current consistent with the summit of roughly regular polygon configures.
The embodiment of 8th of the present invention is the vacuum arc vapor deposition device according to 6th or the 7th of the present invention,
It is that the electric current being formed as planar imports terminal that described electric current imports terminal.
The embodiment of 9th of the present invention is a kind of vacuum arc vapor deposition device,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Be configured to import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, the part that described electric current importing terminal is formed as the shape or ring-type with ring-type is the band shape of the shape of shortcoming.
The embodiment of 10th of the present invention is a kind of vacuum arc vapor deposition device,
Arc-over is utilized to make cathode material evaporate and on base material, carry out film forming,
Be configured to import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, described electric current imports terminal and is formed as having the band shape that the shape along the roughly circumference of regular polygon shape or the part along the roughly shape of the circumference of regular polygon shape are the shape of shortcoming.
Secondly, the embodiment of 11st of the present invention is a kind of film,
Use the vacuum arc vapor deposition method film forming on base material according to any one of 1st to the 5th of the present invention.
By using described vacuum arc vapor deposition method, as mentioned above, the utilising efficiency of negative electrode can be promoted and carry out being coated with (coating) extremely at an easy rate, therefore the film of coating inexpensive can be provided.
Secondly, the embodiment described in 12nd of the present invention is a kind of article,
Comprise the film described in 11st of the present invention.
Because form the film of coating inexpensive on base material, so the article such as mechanical component, auto parts, mould can be provided at an easy rate.
Secondly, the embodiment of 13rd of the present invention is a kind of product,
Use the article described in 12nd of the present invention.
Because use the cheap article such as mechanical component, auto parts, mould, so the product of machinery, automobile and other system etc. can be provided at an easy rate.
The effect of invention
According to the present invention, a kind of vacuum arc vapor deposition technology can be provided, even if when using bigbore negative electrode, the cathode material of cathode surface also can be made to consume equably and promote the utilising efficiency of negative electrode, thus coating cost can be reduced.
Accompanying drawing explanation
Fig. 1 is the figure of the formation of the vacuum arc vapor deposition device representing one embodiment of the present invention.
Fig. 2 is the figure of an example of the negative electrode of the vacuum arc vapor deposition device representing one embodiment of the present invention in a schematic manner.
Fig. 3 (a), Fig. 3 (b) are the figure of the negative electrode of the vacuum arc vapor deposition device representing another embodiment of the present invention in a schematic manner.
Fig. 4 (a), Fig. 4 (b), Fig. 4 (c), Fig. 4 (d) are the figure of the negative electrode of the vacuum arc vapor deposition device representing another embodiment of the invention in a schematic manner.
Fig. 5 is the figure of the basic formation representing vacuum arc vapor deposition device.
Fig. 6 (a), Fig. 6 (b) are the figure of an example of the configuration that magnetic field generation mechanisms is described.
Fig. 7 is the figure of situation about representing when to configure bigbore negative electrode in vacuum arc vapor deposition device in the past.
[explanation of symbol]
1: vacuum chamber
2: negative electrode
3: base material
4,7: power supply
5: plasma
6: backing plate
8: electric current imports terminal
9: base material frame
11: magnetic field generation mechanisms
Embodiment
Below, based on embodiment, the present invention will be described.
1. vacuum arc vapor deposition device
First, the vacuum arc vapor deposition device of present embodiment is described.Fig. 1 is the figure of the formation of the vacuum arc vapor deposition device representing present embodiment, this vacuum arc vapor deposition device comprises vacuum chamber 1, negative electrode 2, base material 3, power supply 4, power supply 7, backing plate 6, electric current importing terminal 8 and base material frame 9, using direct supply or the pulse power as power supply 4, this one side of power supply 7, be the formation substantially the same with the formation of the vacuum arc vapor deposition device in the past shown in Fig. 5.In addition, in the vacuum arc vapor deposition device shown in Fig. 1, in order to carry out speed and the position control of arc spot, not shown magnetic field generation mechanisms is configured in the rear side near center location of negative electrode 2.In addition, exhaust system and the air intake systems such as not shown turbomolecular pump (turbo-molecular pump), rotor pump (rotary pump) is also configured.And, also there is the situation being optionally configured with not shown triggering device (trigger) etc.
The difference of the vacuum arc vapor deposition device shown in the vacuum arc vapor deposition device of present embodiment and Fig. 5 is: enter terminal 8 be located at multiple position at negative electrode 2 conductance that powers on.
Specifically, such as, as shown in Figure 2, electric current importing terminal 8 is configured at four positions of terminal numbering 1 ~ 4.
Thus, as mentioned above, and electric current is imported terminal 8 and be configured at compared with the situation at a position, the discharging current flowing into each position diminishes, and electric current imports the magnetic field produced near terminal 8 and dies down.As a result, the magnetic field leaking to negative electrode 2 surface also dies down, and diminishes for the impact in magnetic field being used for controlling arc spot.
In addition, by electric current being imported the summit that terminal 8 is configured in square, leak to the magnetic field spatially homogenizing on negative electrode 2 surface because of discharging current, thus the local magnetic field change in the control of arc spot can be relaxed fully.As a result, when film forming, the surface of negative electrode 2 is consumed equably, and the utilising efficiency of negative electrode 2 uprises, thus can realize extremely cheap coating.
And, be not limited to electric current be imported Fig. 2 that terminal 8 is configured to square, when electric current being imported terminal 8 and being configured in the summit of the regular polygons such as positive triangle or regular pentagon, leak to the magnetic field spatially homogenizing on negative electrode 2 surface because of discharging current.Now, the number that electric current imports terminal 8 is more, and spatially the degree of homogenizing is larger, and the utilising efficiency of negative electrode 2 uprises further, thus can realize extremely cheap coating.
In addition, the shape that electric current imports terminal 8 is not limited to the toroidal shown in Fig. 2, also can be formed as the planar with the area of fixed size shown in Fig. 3 (a) or Fig. 3 (b).In addition, in Fig. 3 (a), the electric current being formed as arc-shaped imports terminal 8 and equally spaced configures, and in Fig. 3 (b), is formed as OBL electric current importing terminal 8 and radially configures.
Import terminal 8 by the electric current configuring the shape that area is significantly expanded in this way, electric current can be increased and import terminal 8 and the contact area of negative electrode 2, therefore, the magnetic field leaking to cathode surface can be weakened further.As a result, the local magnetic field change in the control of arc spot can be relaxed more fully, and more positively make the uniformly consumption of negative electrode 2, thus utilising efficiency can be promoted further.
And, also the area that electric current imports terminal can be further expanded, such as be formed as banded, the ring-type shown in the shape that described band shape is the circumference along square shape shown in the ring-type shown in Fig. 4 (a), Fig. 4 (b), Fig. 4 (c) and the shape etc. of the part shortcoming of the shape of part shortcoming and the shape of the circumference along square shown in Fig. 4 (d).Importing terminal 8 by forming this electric current, the contact area that electric current imports terminal and negative electrode can be increased, thus the magnetic field leaking to cathode surface from electric current importing terminal can be weakened.And, terminal need not be imported at multiple position configuration electric current.
In addition, in FIG, it is configure across backing plate 6 that electric current imports terminal 8, but also can across configurations such as the flanges (flange) of support backing plate 6.
2. vacuum arc vapor deposition method
Secondly, based on Fig. 1, the vacuum arc vapor deposition method of the vacuum arc vapor deposition device using described formation is described.
First, the vacuum tightness that the exhaust system such as described turbomolecular pump, rotor pump will vacuumize in vacuum chamber 1 as regulation is used.Then, nitrogen or oxygen etc. is imported by gas delivery system, and be kept and be fixed between the negative electrode 2 of backing plate 6 and vacuum chamber 1, power supply 7 is utilized to start arc-over, form plasma 5, cathode material is evaporated, in base material 3 film forming be typically biased as negative potential by power supply 4 from negative electrode 2.
Now, because the negative potential applied by power supply 7 is imported terminal 8 from multiple electric currents on the summit being configured in square and is imported into dispersedly, so, as mentioned above, it is weak and spatially become even that electric current imports the magnetic field produced near terminal 8, and arc spot is properly controlled.As a result, when film forming, the surface of negative electrode 2 is consumed equably, and the utilising efficiency of negative electrode 2 uprises, thus can realize extremely cheap coating.
3. the film utilizing vacuum arc vapor deposition method to be formed and the article utilizing film to be formed and manufacture
In described vacuum arc vapor deposition method, the kind of the gas imported during kind and film forming according to cathode material, can form various film.Specifically, such as, use Ti at negative electrode, when importing gas use nitrogen, oxygen, form TiN, TiO respectively
2film, in addition, use Cr at negative electrode, import gas when using nitrogen, form the film of CrN.And, use C at negative electrode, and when not importing gas and carry out evaporation, diamond-like carbon film-coating (Diamond-like carbon, DLC) can be formed.
By applying this film technique, the article such as mechanical component, auto parts, mould of fine quality can be manufactured at an easy rate.In addition, the machinery, automobile and the other system that use these article can be provided at an easy rate.
[embodiment]
Below, the present invention is further illustrated based on embodiment.
1. film forming
(comparative example 1)
In the vacuum arc vapor deposition device shown in Fig. 1, use diameter
the Ti negative electrode of thickness 12mm as negative electrode 2, and imports nitrogen and form TiN on SKH51 base material.
In addition, now, the import volume of nitrogen is 300CCM, and the vacuum tightness of filming chamber is 5.2Pa, flame current (discharging current) is 150A, the runtime of evaporation source is 800min, electric current is imported terminal and is only located at a position of the terminal numbering 2 shown in Fig. 2 and carries out film forming.
(comparative example 2)
Film forming is carried out in the same manner as comparative example 1 except the position being only located at the terminal numbering 4 shown in Fig. 2 except electric current being imported terminal.
(embodiment)
Except four positions being located at the terminal numbering 1 ~ 4 shown in Fig. 2 except electric current being imported terminal, carry out film forming in the same manner as comparative example 1.In addition, now, the flame current flowing into electric current importing each position of terminal becomes 150/4A.
2. evaluation method and evaluation result
After film forming terminates, in each comparative example and embodiment, each electric current measuring terminal numbering 1 ~ 4 imports the thickness of the negative electrode 2 near terminal, obtains consumption (reduction of thickness).Aggregated ratings result is also shown in table 1.
[table 1]
According to table 1, can confirm that negative electrode unevenly consumes in comparative example 1, comparative example 2.Specifically, in comparative example 1, maximum as the consumption near the terminal numbering 2 of electric current importing terminal, being 1.6mm, farthest away from minimum near the terminal numbering 4 of terminal numbering 2, is 0.8mm, and terminal numbering 1, terminal numbering 3 are middle 1.1mm.
In addition, in comparative example 2, maximum as the consumption near the terminal numbering 4 of electric current importing terminal, for 1.8mm, farthest away from minimum near the terminal numbering 2 of terminal numbering 4, be 0.9mm, terminal numbering 1, terminal numbering 3 are respectively middle 1.5mm, 1.0mm.
According to described result, can confirm that the consumption configuring negative electrode near electric current importing terminal obviously aggravates.Think that its reason is: the magnetic field produced because electric current imports the discharging current near terminal as described leaks to cathode surface, result, with control arc spot magneticinterference and weaken magnetic field, the speed of arc spot latens, thus negative electrode consumption aggravation.
In contrast, be located in the embodiment at four positions of terminal numbering 1 ~ 4 electric current being imported terminal, the consumption near each terminal is in the scope of 1.1mm ~ 1.3mm, and cathode surface is consumed roughly equably.Confirmed according to described result, by importing terminal at multiple position configuration electric current, negative electrode is consumed roughly equably, thus can promote the utilization of negative electrode.
Above, describe the present invention based on embodiment, but the present invention is not limited to described embodiment.In the scope identical and impartial with the present invention, various change can be applied to described embodiment.
Claims (13)
1. a vacuum arc vapor deposition method, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Terminal is imported by being used for the electric current that anticathode imports electric current in the configuration of multiple positions, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate.
2. vacuum arc vapor deposition method according to claim 1, is characterized in that:
Configure described electric current in the mode that the center of described electric current importing terminal is consistent with the summit of regular polygon and import terminal.
3. vacuum arc vapor deposition method according to claim 1 and 2, is characterized in that:
It is that the electric current being formed as planar imports terminal that described electric current imports terminal.
4. a vacuum arc vapor deposition method, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, the part that described electric current importing terminal is formed as the shape or ring-type with ring-type is the band shape of the shape of shortcoming.
5. a vacuum arc vapor deposition method, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and arc-over is carried out to described cathode material circulation discharging current, form vapor-deposited film on the substrate, a described electric current imports terminal and forms band shape, and described band shape is along the edge part of regular polygon or is formed along there being the edge part of the regular polygon of partial notch.
6. a vacuum arc vapor deposition device, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Be configured to import terminal by being used for the electric current that anticathode imports electric current in the configuration of multiple positions, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate.
7. vacuum arc vapor deposition device according to claim 6, is characterized in that:
Configure described electric current in the mode that the center of described electric current importing terminal is consistent with the summit of regular polygon and import terminal.
8. the vacuum arc vapor deposition device according to claim 6 or 7, is characterized in that:
It is that the electric current being formed as planar imports terminal that described electric current imports terminal.
9. a vacuum arc vapor deposition device, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Be configured to import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, a described electric current imports terminal and forms band shape, and described band shape is ring-type or the ring-type having partial notch.
10. a vacuum arc vapor deposition device, utilizes arc-over that cathode material is evaporated, and on base material, carries out film forming, it is characterized in that:
Be configured to import terminal and import terminal by configuring electric current as being used for the electric current that anticathode imports electric current, and to described cathode material circulation discharging current, and carry out arc-over, form vapor-deposited film on the substrate, a described electric current imports terminal and forms band shape, and described band shape is along the edge part of regular polygon or is formed along there being the edge part of the regular polygon shape of partial notch.
11. 1 kinds of films, is characterized in that:
Use the vacuum arc vapor deposition method film forming on base material according to any one of claim 1 to 5.
12. 1 kinds of article, is characterized in that:
Comprise film according to claim 11.
13. 1 kinds of products, is characterized in that:
Use the article described in claim 12.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-197243 | 2013-09-24 | ||
| JP2013197243A JP2015063721A (en) | 2013-09-24 | 2013-09-24 | Vacuum arc vapor deposition method, vacuum arc vapor deposition device, and thin film and article manufactured by using vacuum arc vapor deposition method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104451559A true CN104451559A (en) | 2015-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410386906.1A Pending CN104451559A (en) | 2013-09-24 | 2014-08-07 | Vacuum arc evaporation method and apparatus, and film, article and product manufactured by the method |
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| Country | Link |
|---|---|
| JP (1) | JP2015063721A (en) |
| CN (1) | CN104451559A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277714A (en) * | 1990-12-25 | 1994-01-11 | Kabushiki Kaisha Kobe Seiko Sho | Vacuum arc deposition device |
| CN1332266A (en) * | 2000-07-06 | 2002-01-23 | 日新电机株式会社 | Vacuum arc evaporation source and film-forming device using it |
| WO2005040451A1 (en) * | 2003-09-18 | 2005-05-06 | Gorokhovsky Vladimir I | Rectangular filtered vapor plasma source and method of controlling vapor plasma flow |
| CN1952205A (en) * | 2005-10-17 | 2007-04-25 | 株式会社神户制钢所 | Arc ion plating apparatus |
| CN201971891U (en) * | 2010-12-09 | 2011-09-14 | 北京振涛国际钛金技术有限公司 | Cylindrical evaporation, ionization and precipitation device of programmed electric arc |
-
2013
- 2013-09-24 JP JP2013197243A patent/JP2015063721A/en active Pending
-
2014
- 2014-08-07 CN CN201410386906.1A patent/CN104451559A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277714A (en) * | 1990-12-25 | 1994-01-11 | Kabushiki Kaisha Kobe Seiko Sho | Vacuum arc deposition device |
| CN1332266A (en) * | 2000-07-06 | 2002-01-23 | 日新电机株式会社 | Vacuum arc evaporation source and film-forming device using it |
| WO2005040451A1 (en) * | 2003-09-18 | 2005-05-06 | Gorokhovsky Vladimir I | Rectangular filtered vapor plasma source and method of controlling vapor plasma flow |
| CN1952205A (en) * | 2005-10-17 | 2007-04-25 | 株式会社神户制钢所 | Arc ion plating apparatus |
| CN201971891U (en) * | 2010-12-09 | 2011-09-14 | 北京振涛国际钛金技术有限公司 | Cylindrical evaporation, ionization and precipitation device of programmed electric arc |
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| Publication number | Publication date |
|---|---|
| JP2015063721A (en) | 2015-04-09 |
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