CN104445043B - A kind of MEMS micro-valves and its manufacture craft - Google Patents
A kind of MEMS micro-valves and its manufacture craft Download PDFInfo
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Abstract
The invention discloses a kind of MEMS micro-valves and its manufacture craft, it is related to MEMS technology field, solves existing micro-valve manufacture craft requirement height, the technical problem of bearing capacity difference, MEMS micro-valves of the present invention includes the first silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and with fluid intake and fluid issuing；Second silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and the rigid element with the outer flow passage for being formed in the second silicon surface and with inner flow passage, the rigid element is placed in outer flow passage and can be moved between valve opening position and valve closing position, second silicon layer includes bonding part and sealing, second silicon layer is bonded by bonding part with the first silicon layer, fluid intake and fluid issuing are located at the nonbonding region of the first silicon layer, outer flow passage is located between the first silicon layer nonbonding region and sealing, buffer solution gap is formed between the lower surface in the upper surface of rigid element and the first silicon layer nonbonding region, suspension gap is formed between the lower surface and sealing internal face of rigid element.
Description
【Technical field】
The present invention relates to MEMS（Microelectromechanical systems）Micro-valve and its manufacture craft, are based particularly on the micro- of MEMS technology
Valve, belongs to MEMS technology field.
【Background technology】
MEMS（Micro-Electro-Mechanic System, microelectromechanical systems）Referring to can batch making, collection
Micro mechanism, microsensor, micro actuator and signal transacting and control circuit, until interface, communication and power supply are equal to
The microdevice or system of one.MEMS technology make microsensor, microactrator, micro partses, Micromechanical Optics device,
Microfluidic device etc. suffers from very wide application prospect in the fields such as Aero-Space, consumer electronics, military affairs, also extensive
It is applied to the fields such as micro-fluidic chip and synthetic biology.
Used as the Primary Component that fluid is controlled, silicon micro-valve has prominent application preceding in the industrial refrigeration of high pressure high flow capacity
Scape, relative to traditional mechanically controlled valve, MEMS silicon micro-valves have fast response time, control accurate, good reliability, low cost,
Can the prominent advantage such as mass production, good stability.
The most micro-valves being disclosed at present realize valve import and valve outlet by the laminate structure of film or other forms
Between fluid control, it is impossible to be applied to high pressure high flow capacity industrial fluids control, for example cryogenic fluid control.Because by
Hooke's law understands, if rigidity of the micro-structural on pressure-bearing direction not enough, can occur very big deformation even beyond deformation
Scope, causes structural failure, therefore, such micro-valve structure is not used to the control of high pressure industrial fluid.United States Patent (USP)
US4895500 discloses a kind of typical double-decker micro-valve, and valve port is controlled by flexible cantilever beam（Including entrance with
Outlet）Break-make, there is following limitation in the micro-valve：First, flexible cantilever beam is flexible member, its pressure for bearing load
Be limited in scope, high-pressure fluid easily makes the micro-valve cannot turn off fluid, or internal structure occurs and damage, such as cantilevered beam members root
Fracture；2nd, the micro-valve carrys out output campaign displacement by flexible action mode, but displacement is limited, the flow for causing the micro-valve to control
Scope is very limited；3rd, the micro-valve in the fabrication process, cantilever beam structure is obtained by local heavily doped corrosion, is easily caused
Very big residual stress, has influence on the bonding connection between wafer, or even have a strong impact on yield rate.
It is existing for the problem that the micro-valve of flexible member control flow is dfficult to apply to the control of high pressure high flow capacity industrial fluids
Technology has the following scheme of proposition：Multilayer sealing-in is carried out using thick silicon, because thick silicon has larger rigidity, can be carried higher
Fluid pressure, sliding valve structure is realized by the use of thick silicon as rigid member, and rigid member produces the movement of rigid mode, reaches opening
Or the purpose of masking valve port, and be no longer that the flexibility mode such as bending using film or laminate structure realizes fluid on-off or flow
Regulation, can greatly improve the ability of device pressure-bearing.
For example：United States Patent (USP) US7011378, US6523560 discloses a kind of micro-valve of three-decker, and discloses as follows
Structure：" a kind of micro-valve is made up of ground floor, the second layer and third layer, and the second layer defines basin and is located at ground floor and third layer
Between ".Description based on the patent to micro-valve, using three layer crystal circles respectively as fluid chamber structure upper parietal layer, intermediate layer
（Including movable mechanism）, lower parietal layer, and make three layers to be bound tightly together, realize closed cavity body structure, intermediate layer
Actuator promotes the movement of silicon rigid member, reaches the purpose opened or cover valve port.
Combination between wafer can be divided into the Direct Bonding without intermediate medium and be bonded two kinds with there is the non-immediate of intermediate medium
Type, but Direct Bonding than it is non-immediate bonding be more suitable for forming micro-valve.The Direct Bonding of wafer is realized, is had to wafer material
Strict flatness requirement, by taking the Si-Si direct bonding with bond strength high as an example, for the requirement of silicon chip surface flatness
It is very high, in general, preferable Si-Si bonding is realized, silicon chip used is at 2 × 2 μm2Interval in AFM measure it is micro- thick
Rugosity can not be more than 1nm.Direct Bonding between three layer crystals circle has harsher material than the Direct Bonding between two-layer wafer
Material flatness requirement realizes difficulty with technique higher, it is easy to the bottleneck as manufacturing process.Equally there is bearing capacity high,
Compared to the silicon micro-valve made using three layers of wafer bonding, silicon micro-valve material cost Geng Sheng, the work made using two-layer wafer bonding
Skill difficulty is lower, technique implementation process is more simplified.
【The content of the invention】
The present invention proposes a kind of MEMS micro-valves and its manufacture craft to overcome the shortcomings of present technology, simplifies micro-valve technique,
Reduce technique and realize difficulty and material cost, and the application need of the aspects such as the industrial fluids control of high pressure high flow capacity can be met
Ask.
In order to solve the above technical problems, the present invention is adopted the following technical scheme that：
1st, a kind of MEMS micro-valves, including：
First silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and with fluid intake and fluid issuing；
Second silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and with being formed in the outflow of the second silicon surface
Road and the rigid element with inner flow passage, the rigid element be placed in outer flow passage and can valve opening position and valve closing position it
Between move；
Second silicon layer includes bonding part and sealing, and the second silicon layer is bonded by bonding part with the first silicon layer, fluid intake
With fluid issuing positioned at the nonbonding region of the first silicon layer, outer flow passage is located between the first silicon layer nonbonding region and sealing,
Buffer solution gap, the lower surface of rigid element are formed between the lower surface in the upper surface of rigid element and the first silicon layer nonbonding region
Suspension gap is formed between sealing internal face.
Further, the upper surface of the rigid element is concordant with the bonding face of the second silicon layer, the first silicon layer nonbonding
The lower surface for closing region is provided with inner groovy；
Or the upper surface of the rigid element is less than the bonding face of the second silicon layer, the first silicon layer nonbonding region
Lower surface is concordant with the bonding face of the second silicon layer；
Or the upper surface of the rigid element is less than the bonding face of the second silicon layer, the first silicon layer nonbonding region
Lower surface is provided with inner groovy.
Further, the sealing internal face is distributed with some projections, so as to produce upward effect during flow of fluid
Power holding rigid element.
Further, Fluid pressure detection mouth is additionally provided with first silicon layer, the Fluid pressure detection mouth is located at stream
Between body entrance and fluid issuing.
Further, actuating rib, transmission ridge and displacement equations beam, the cause are additionally provided with the outer flow passage of second silicon layer
Dynamic rib is connected between transmission ridge and outer flow passage side wall, and the displacement equations beam is connected between transmission ridge and rigid element, institute
State the second silicon layer and be provided with a pair of electrodes, the actuating rib is driven ridge by thermal drivers, and transmission ridge is dynamic firm by displacement equations sill bolt
Property part movement.
The invention allows for a kind of manufacture craft of MEMS micro-valves, comprise the following steps：
1）, set the first silicon layer and the second silicon layer；
2）, in the second silicon layer upper surface etch inner flow passage；
3）, the second silicon layer upper surface portion deposit mask；
4）, do not deposit Mask portion in the second silicon layer upper surface and tentatively etch outer flow passage, include rigid element to be formed
In interior fine motion mechanical part；
5）, on the second silicon layer upper surface and outer flow passage internal face deposit protective layer；
6）, the protective layer that deposits on the second silicon layer upper surface of etching and outer flow passage bottom wall, retain on outer flow passage two side
Protective layer；
7）, etching outer flow passage bottom wall；
8）, outer flow passage bottom by solution corrosion formed suspension gap so that including the micromover including rigid element
Tool part can be moved in outer flow passage；
9）, removal the second silicon layer on deposit mask and remaining protective layer, and deposit form electrode；
10）, etching the first silicon layer；
11）, the first silicon layer is placed on the second silicon layer, and make closely to be connect between the first silicon layer and the second silicon layer by bonding
Close.
Beneficial effects of the present invention：
MEMS micro-valves of the invention realize that fluid intake and fluid issuing are switched on or off using the movement of rigid element,
And then realize valve opening or valve closing, compared to existing technology, rigid element of the invention due to itself possessing structural strength higher,
Fluid pressure higher can thus be carried without damaging；In addition, original output displacement is carried out into conversion by displacement equations beam putting
Greatly, the big displacement rigid motion of rigid element in horizontal plane can be realized, expands the flow-control scope of micro-valve so that the present invention
Can be suitably used for the industrial fluids control of high pressure high flow capacity, such as cryogenic fluid control.
MEMS micro-valves of the invention are double-layer structure, the micro-valve that three layers of relatively current Silicon Wafer sealing-in are formed, the present invention
Micro-valve can be greatly reduced the requirement to material flatness and environment cleanliness, reduce technology difficulty and complexity, overcome work
Skill bottleneck, improves yield rate, due to reducing one layer of wafer material, reduces material cost.
These features of the invention and advantage will be detailed in following specific embodiment, accompanying drawing exposure.
【Brief description of the drawings】
The present invention is described further below in conjunction with the accompanying drawings：
Fig. 1 is the dimensional structure diagram of micro-valve embodiment one of the present invention；
Fig. 2 is structural representation of the micro-valve embodiment one of the present invention under valve opening state；
Fig. 3 is structural representation of the micro-valve embodiment one of the present invention under closed valve state；
Fig. 4 is micro-valve embodiment one of the present invention in control principle schematic diagram；
Fig. 5 is structural representation of the micro-valve embodiment two of the present invention under valve opening state；
Fig. 6 is structural representation of the micro-valve embodiment two of the present invention under closed valve state；
Fig. 7（a）- Fig. 7（j）It is the Making programme figure of micro-valve of the present invention.
【Specific embodiment】
The present invention proposes a kind of MEMS micro-valves, including the first silicon layer and the second silicon layer, the first silicon layer have fluid intake and
Fluid issuing, has the outer flow passage and the rigid element with inner flow passage for being formed in the second silicon surface, rigidity on the second silicon layer
Portions house can be moved in outer flow passage between valve opening position and valve closing position, and the second silicon layer includes bonding part and sealing
Portion, the second silicon layer is bonded by bonding part with the first silicon layer, and fluid intake and fluid issuing are positioned at the nonbonding area of the first silicon layer
Domain, outer flow passage is located between the first silicon layer nonbonding region and sealing, the upper surface of rigid element and the first silicon layer nonbonding
Buffer solution gap is formed between the lower surface in region, suspension gap is formed between the lower surface and sealing internal face of rigid element.
Can control to form the more small more accurately microgap of interlayer by such scheme, be let out with smaller when making micro-valve in off position
Leakage.Compared to existing technology, micro-valve of the invention, structure simplify, technology difficulty reduction, material-saving cost, and can carry compared with
Fluid pressure high, is suitable to cryogenic fluid control.
The technical scheme of the embodiment of the present invention is explained and illustrated with reference to the accompanying drawing of the embodiment of the present invention, but under
Embodiment only the preferred embodiments of the present invention are stated, and it is not all.Based on the embodiment in implementation method, people in the art
Member obtains other embodiment on the premise of creative work is not made, and belongs to protection scope of the present invention.
Embodiment one：
Reference picture 1-3, MEMS micro-valve, including the first silicon layer 1 and the second silicon layer 2, wherein output fluid on the first silicon layer 1 entering
Mouth 10 and fluid issuing 11, have on the second silicon layer 2 and are formed in the outer flow passage 20 on the surface of the second silicon layer 2 and with inner flow passage 31
Rigid element 3, rigid element 3 is placed in outer flow passage 20, and can be moved between valve opening position and valve closing position.
When rigid element 3 is designed, the present embodiment realizes the bigger position of rigid element 3 by special driving structure
Output is moved, specifically：Actuating rib 23, transmission ridge 22 and displacement equations beam 21 are additionally provided with the outer flow passage 20 of the second silicon layer 2, are caused
Dynamic rib 23 is connected between transmission ridge 22 and the side wall of outer flow passage 20, and displacement equations beam 21 is connected to transmission ridge 22 and rigid element 3
Between, the second silicon layer 2 is provided with a pair of electrodes 26, in addition, displacement equations beam 21 needs a fulcrum 210 to be supported in outer flow passage 20
Interior, to form lever construction, and fulcrum 210 more levels off to and is driven ridge 22, to enable that displacement equations beam 21 will be driven ridge 22
Displacement is amplified on rigid element 3, realizes the big displacement rigid motion of rigid element 3 in horizontal plane, expands the flow of micro-valve
Control range；As a rule, when the second silicon layer 2 is made, above-mentioned actuating rib 23, transmission ridge 22, displacement equations beam 21 and
Rigid element 3 these fine motion mechanical parts are integrally formed in outer flow passage 20, such as by the series of process such as etching.
Reference picture 2, under micro-valve valve opening state, fluid intake 10 and fluid issuing 11 on the first silicon layer 1 correspond to firm
Property part 3 on inner flow passage 31, fluid by fluid intake 10 enter inner flow passage 31, inner flow passage 31 is flowed out by fluid issuing 11, this
When rigid element 3 be in valve opening position；Reference picture 3, under micro-valve closed valve state, the correspondence of fluid intake 10 on the first silicon layer 1
Inner flow passage 31 on rigid element 3, and the side of fluid issuing 11 is stopped by rigid element 3, fluid can only be entered by fluid intake 10
Inner flow passage 31, now rigid element 3 is in valve closing position.Being moved between valve closing position and valve opening position of rigid element 3
Two kinds of mode of operations of micro-valve valve opening and valve closing can be realized less.
Reference picture 1,4, in thermal drivers mode as an example, two electrodes 26 are connected with the positive and negative electrode of power supply respectively, and circuit leads to
Routing switch is controlled.When the switch is closed, power supply gives micro-valve electric signal, activates the expanded by heating of rib 23, with actuating rib 23
Expansion, actuating rib 23 is extended so that being driven ridge 22 and acts, and causes displacement equations beam 21 around fulcrum, so as to drive rigid portion
Part 3 is acted；When the switches are opened, micro-valve loses the electric signal that power supply gives, the influence of rib actuated 23 rigidity itself, rigid portion
Part 3 can be returned to initial position, be specifically electrically connected mode and be：First, by wire bonding, by the electrode 26 of micro-valve with it is outer
Portion's pad realizes electrical connection, then by the packing forms such as wire or substrate wiring, by external pads and the positive and negative electrode 26 of power supply
Realize electrical connection.
The displacement and voltage of rigid element 3 are in ratio corresponding relation, the fluid intake 10 of micro-valve can realize all or
Partial opening, fluid issuing 11 can realize all or part of masking, thus, by the voltage levels pair for applying electric signal
Control the aperture of fluid intake 10 or fluid issuing 11 with answering ratio, realize the corresponding ratio control of fluid flow.
In addition, micro-valve can also be controlled by continuous PWM electric signals, the dutycycle of pwm signal realizes the correspondence of fluid flow
Ratio is controlled.Except of course that outside thermal drivers, the type of drive such as current piezoelectric actuated, magnetic actuation, electrostatically actuated can also be used for this
In embodiment.
In order that the motion of rigid element 3 is more reliable and more stable, in the silicon layer nonbonding of upper surface 32 and first of rigid element 3
Formation buffer solution gap 25 between the lower surface in region 12 is closed, buffer solution gap 25 only allows least a portion of fluid to enter outer flow passage 20,
This layer of buffer solution gap 25 can prevent the upper surface 32 of rigid element 3 from being contacted with the lower surface in the first silicon layer nonbonding region 12,
Reduce the resistance of motion of rigid element 3, during specific implementation：Can be the upper surface 32 of rigid element 3 and being bonded for the second silicon layer 2
Face is concordant, and the lower surface in the first silicon layer nonbonding region 12 is provided with inner groovy, and the groove depth of inner groovy is the width of buffer solution gap 25
Degree；Can also be the bonding face of the upper surface 32 less than the second silicon layer 2 of rigid element 3, under the first silicon layer nonbonding region 12
Surface is concordant with the bonding face of the second silicon layer 2, between the upper surface of rigid element 3 and the bonding face of the second silicon layer 2 it is vertical away from
From the width of as buffer solution gap 25；Can also be the bonding face of the upper surface 32 less than the second silicon layer 2 of rigid element 3, first
The lower surface in silicon layer nonbonding region 12 is provided with inner groovy, then the groove bottom distance of the upper surface of rigid element 3 to inner groovy
The as width of buffer solution gap 25.More implementation methods no longer this describe in detail one by one, as long as ensureing the upper of rigid element 3 in principle
Certain interval is formed between the lower surface in the silicon layer nonbonding region 12 of surface 32 and first.
On the premise of above-mentioned buffer solution gap 25, formed between the lower surface 33 and sealing internal face 281 of rigid element 3
Suspension gap 24, so, can guarantee that rigid element 3 is always maintained at suspended state, and resistance is small so that micro-valve work is more stable can
Lean on.Meanwhile, some minute protrusions are distributed with sealing internal face 281, so as to produce upward active force support during flow of fluid
Rigid element 3 is held, more preferable suspension effect is reached, in general, sealing internal face 281 has certain roughness.
It should be noted that：Inner flow passage 31 is the groove structure formed in the upper surface of rigid element 3, and outer flow passage 20 is
The groove structure formed described in the upper surface of two silicon layer 2, so, in the presence of having buffer solution gap 25 and a suspension gap 24, just
Property part 3 be that, in suspended state, rigid element 3 and suspension gap 24 are formed in outer flow passage 20 in the outer flow passage 20.One
Denier forms outer flow passage 20, and the second silicon layer 2 can be divided into and include bonding part 27 and sealing 28, the second silicon layer by bonding part 27 with
First silicon layer 1 is bonded, and fluid intake 10 and fluid issuing 11 are located at the nonbonding region 12 of the first silicon layer, and outer flow passage 20 is located at the
Between one silicon layer nonbonding region 12 and sealing 28, the silicon layer nonbonding region 12 of upper surface 32 and first of rigid element 3
Buffer solution gap 25 is formed between lower surface, suspension gap is formed between the lower surface 33 and sealing internal face 281 of rigid element 3
24。
In addition, the present embodiment is also different from prior art to the selection on wafer material, in the present embodiment, at least
Two silicon layers 2 be by（111）The single crystal silicon material of crystal orientation is made.For example, the first silicon layer 1 is with the second silicon layer 2（111）Crystal orientation
Single crystal silicon material；Again or such as, the second silicon layer 2 is（111）The single crystal silicon material of crystal orientation, the first silicon layer 1 can be with for other（111）It is brilliant
To the material that is tightly engaged into of monocrystalline silicon, for example, Pyrex, or other crystal orientation single crystal silicon material etc..The present embodiment base
In（111）The double-deck bonding of the single crystal silicon material of crystal orientation, is conducive to technological operation, so as to reach more preferable splicing results.
Embodiment two：
Reference picture 5,6, the micro-valve of the present embodiment is additionally provided with Fluid pressure detection mouth 13, fluid pressure on its first silicon layer 1
Power detection mouth 13 is located between fluid intake 10 and fluid issuing 11, thus, when micro-valve can detect that fluid is flowed into or out
Pressure.
Specifically：As shown in figure 5, under valve opening state, fluid intake 10 is connected with Fluid pressure detection mouth 13, fluid by
Fluid intake 10 is flowed into, and is flowed out by Fluid pressure detection mouth 13, and within the response time, Fluid pressure detection mouth 13 obtains a mark
Quasi-fluid pressure signal, micro-valve is operated in supercharging mode of operation.
As shown in fig. 6, under closed valve state, fluid issuing 11 is connected with Fluid pressure detection mouth 13, and fluid is gone out by fluid
Mouth 11 is flowed out, and standard fluid pressure signal is released, and micro-valve is operated in earial drainage mode of operation.
The other structures of the present embodiment micro-valve can refer to embodiment one, repeat no more.
Embodiment three：
A kind of manufacture craft of MEMS micro-valves is present embodiments provided, is comprised the following steps：
The 1st, first silicon layer and the second silicon layer are set, wherein the material of the first silicon layer is included but is not limited to（111）、（100）、
（110）The single crystal silicon material of crystal orientation and other semi-conducting materials, the material of the second silicon layer is（111）The single crystal silicon material of crystal orientation；
2nd, such as Fig. 7（a）, inner flow passage 31 is etched in the upper surface of the second silicon layer 2；
3rd, such as Fig. 7（b）, mask 4 is deposited in the upper surface portion of the second silicon layer 2, not by the upper table of the second silicon layer 2 in the step
Face is all covered with mask, but reserves the etched surface of subsequent technique；
4th, such as Fig. 7（c）, do not deposit Mask portion in the upper surface of the second silicon layer 2 and tentatively etch outer flow passage 20, to form bag
Rigid element 3 is included in interior fine motion mechanical part, fine motion mechanical part also include it is integrally formed with rigid element 3 actuating rib,
Transmission ridge and displacement equations beam；The present embodiment is etched using RIE, RIE（Reactive Ion Etching, reactive ion etching）
It is a kind of microelectronics dry etch process, its principle is the meeting when the high frequency voltage of 10~100MHZ is applied between plate electrode
The hundreds of microns of sheaths of thickness are produced, sample, ion high-speed impact sample are put into wherein and chemical reaction etching is completed；
5th, such as Fig. 7（d）, protective layer is deposited on the upper surface of the second silicon layer 2 and the internal face of outer flow passage 20, deposition here is led to
Often refer to PECVD（Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor deposition
Method）, make the gas ionization containing film composed atom by microwave or radio frequency etc., being partially formed plasma, and plasma
Body chemism is very strong, it is easy to react, and can deposit institute's phase on the upper surface of the second silicon layer 2 and the internal face of outer flow passage 20
The thinfilm protective coating 5 of prestige, the protective layer 5 of deposition can be SiO2 or Si3N4；
6th, such as Fig. 7（e）, the protective layer deposited on the etching upper surface of the second silicon layer 2 and outer flow passage bottom wall 201, reservation outflow
Protective layer on road two side 200, the step is mainly thinfilm protective coating and the outer flow passage bottom of removal the second silicon layer 2 upper surface
The thinfilm protective coating that wall 201 is formed, and the thinfilm protective coating on outer flow passage two side 200 retains, as in subsequent etching processes
Mask；
7th, such as Fig. 7（f）, the bottom wall of outer flow passage 20 is etched, the formed ＇ of outer flow passage side wall 200 of etching is the step for pass through
Do not possess protective layer, in order to solution corrosion；
8th, such as Fig. 7（g）, suspension gap 24 is formed by solution corrosion in the bottom of outer flow passage 20, so that including rigid element 3
Can be moved in outer flow passage 20 in interior fine motion mechanical part, in the technique, corruption be carried out to silicon layer using KOH or TMAH solution
Erosion, TMAH（Tetramethy1ammonium hydroxide, tetramethyl aqua ammonia）, water white transparency has very strong water suction
Property, it is soluble in water, and heat release during dissolving, the aqueous solution is in strong basicity, there is soapy feeling, is compared with preferable corrosion rate and selection,
Corrosion surface effect is good；
9th, such as Fig. 7（h）, the mask and remaining protective layer deposited on the second silicon layer 2 of removal, and deposit forms electrode 26；
10th, such as Fig. 7（i）, the first silicon layer 1 is etched, fluid intake 10 and fluid issuing 11 are formed, it is general, can also be the
Two lead hole 14 are made on one silicon layer 1, facilitates the Top electrode lead of the second silicon layer 2 to pass through；
11st, such as Fig. 7（j）, the first silicon layer 1 is placed on the second silicon layer 2, and the first silicon layer 1 and the second silicon are made by bonding
It is tightly engaged between layer 2.
The physical meaning of bonding is often referred to pass through two panels surface cleaning, the homogeneity of atomically flating or heterogeneous semiconductor material
Surface clean and activation process, under certain condition directly in conjunction with, by Van der Waals force, molecular force even atomic force make chip key
The technology that synthesis is integrated.Because Direct Bonding has strict flatness requirement for wafer material, then, the present invention is double-deck
The micro-valve of structure compares current three-decker micro-valve, reduces a Direct Bonding technique, significantly reduces smooth to material
The requirement of degree and environment cleanliness, reduces technology difficulty and complexity；In addition, the micro-valve of double-decker of the present invention compares mesh
Preceding three-decker micro-valve, reduces one layer of wafer material, material cost reduction.
On the basis of two layers of crystal circle structure, fluid intake is realized in the movement that micro-valve of the invention additionally uses rigid element
It is switched on or off with fluid issuing, and then realizes valve opening or valve closing, compared to existing technology, rigid element possesses due to itself
Structural strength higher, thus fluid pressure higher can be carried without damaging；In addition, passing through displacement equations beam by original output
Displacement carries out conversion amplification, can realize the big displacement rigid motion of rigid element in horizontal plane, expands the flow control of micro-valve
Scope so that the present invention can be suitably used for the industrial fluids control of high pressure high flow capacity, such as cryogenic fluid control.
By above-described embodiment, the purpose of the present invention is reached by fully effective.It is familiar with the personage of this skill
It should be understood that the present invention includes but is not limited to accompanying drawing and the above content described in specific embodiment.It is any without departing from the present invention
The modification of function and structure principle be intended to be included in the scope of claims.
Claims (6)
1. a kind of MEMS micro-valves, it is characterised in that including：
First silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and with fluid intake and fluid issuing；
Second silicon layer, by（111）The single crystal silicon material of crystal orientation is made, and be formed in the second silicon surface outer flow passage and
Rigid element with inner flow passage, the rigid element is placed in outer flow passage and can be moved between valve opening position and valve closing position
It is dynamic；
Second silicon layer includes bonding part and sealing, and the second silicon layer is bonded by bonding part with the first silicon layer, fluid intake and stream
Body outlet positioned at the nonbonding region of the first silicon layer, outer flow passage be located at the first silicon layer nonbonding region and the second silicon layer sealing it
Between, buffer solution gap is formed between the lower surface in the upper surface of rigid element and the first silicon layer nonbonding region, under rigid element
Suspension gap is formed between surface and sealing internal face.
2. a kind of MEMS micro-valves as claimed in claim 1, it is characterised in that：The upper surface of the rigid element and the second silicon layer
Bonding face it is concordant, the lower surface in the first silicon layer nonbonding region is provided with inner groovy；
Or the upper surface of the rigid element is less than the bonding face of the second silicon layer, the following table in the first silicon layer nonbonding region
Face is concordant with the bonding face of the second silicon layer；
Or the upper surface of the rigid element is less than the bonding face of the second silicon layer, the following table in the first silicon layer nonbonding region
Face is provided with inner groovy.
3. a kind of MEMS micro-valves as claimed in claim 1, it is characterised in that：The sealing internal face is distributed with some convex
Rise, so as to produce upward active force holding rigid element during flow of fluid.
4. a kind of MEMS micro-valves as described in claim 1 or 2 or 3, it is characterised in that：Fluid is additionally provided with first silicon layer
Pressure detecting mouthful, the Fluid pressure detection mouth is located between fluid intake and fluid issuing.
5. a kind of MEMS micro-valves as described in claim 1 or 2 or 3, it is characterised in that：In the outer flow passage of second silicon layer also
Actuating rib, transmission ridge and displacement equations beam are provided with, the actuating rib is connected between transmission ridge and outer flow passage side wall, the displacement
Amplify beam to be connected between transmission ridge and rigid element, second silicon layer is provided with a pair of electrodes, the actuating rib is heated drive
Dynamic transmission ridge, transmission ridge is moved by the dynamic rigid element of displacement equations sill bolt.
6. a kind of manufacture craft of MEMS micro-valves, it is characterised in that comprise the following steps：
1）, set the first silicon layer and the second silicon layer；
2）, in the second silicon layer upper surface etch inner flow passage；
3）, the second silicon layer upper surface portion deposit mask；
4）, do not deposit Mask portion in the second silicon layer upper surface and tentatively etch outer flow passage, to be formed including including rigid element
Fine motion mechanical part；
5）, on the second silicon layer upper surface and outer flow passage internal face deposit protective layer；
6）, the protective layer that deposits on the second silicon layer upper surface of etching and outer flow passage bottom wall, retain the protection on outer flow passage two side
Layer；
7）, etching outer flow passage bottom wall；
8）, outer flow passage bottom by solution corrosion formed suspension gap so that including the fine motion Machinery Ministry including rigid element
Part can be moved in outer flow passage；
9）, removal the second silicon layer on deposit mask and remaining protective layer, and deposit form electrode；
10）, etching the first silicon layer；
11）, the first silicon layer is placed on the second silicon layer, and make to be tightly engaged between the first silicon layer and the second silicon layer by bonding.
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| CN111102398B (en) * | 2018-10-29 | 2021-11-05 | 盾安环境技术有限公司 | Microvalve and method of making same |
| CN113007436B (en) * | 2021-03-02 | 2023-07-25 | 深圳市和来生物技术有限公司 | Power transmission mechanism with multiple power channels and microfluidic chip |
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| JP2007162760A (en) * | 2005-12-09 | 2007-06-28 | Matsushita Electric Works Ltd | Microvalve |
| CN101734613A (en) * | 2009-12-03 | 2010-06-16 | 西北工业大学 | SOI wafer-based MEMS structure manufacturing and dicing method |
| WO2010097740A1 (en) * | 2009-02-24 | 2010-09-02 | Services Petroliers Schlumberger | Micro-valve and micro-fluidic device using such |
| CN102616734A (en) * | 2012-04-17 | 2012-08-01 | 中国工程物理研究院电子工程研究所 | Processing method for double-mask silicon on insulator (SOI) micro electro mechanical system (MEMS) |
| CN103145091A (en) * | 2013-02-07 | 2013-06-12 | 东南大学 | Method for preparing electrostatic actuation structure with staggered teeth |
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| DE102010032799B4 (en) * | 2010-04-09 | 2013-11-21 | Albert-Ludwigs-Universität Freiburg | Micro valve with elastically deformable valve lip, manufacturing process and micropump |
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| CN1942222A (en) * | 2004-03-05 | 2007-04-04 | 铝微有限公司 | Selective bonding for forming a microvalve |
| JP2007162760A (en) * | 2005-12-09 | 2007-06-28 | Matsushita Electric Works Ltd | Microvalve |
| WO2010097740A1 (en) * | 2009-02-24 | 2010-09-02 | Services Petroliers Schlumberger | Micro-valve and micro-fluidic device using such |
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