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CN104425688A - 多个发光二极管晶片的封装 - Google Patents

多个发光二极管晶片的封装 Download PDF

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CN104425688A
CN104425688A CN201410174233.3A CN201410174233A CN104425688A CN 104425688 A CN104425688 A CN 104425688A CN 201410174233 A CN201410174233 A CN 201410174233A CN 104425688 A CN104425688 A CN 104425688A
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phosphor
package
emitting diode
glue
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郑宗淦
陈家进
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Harvatek Corp
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Abstract

本发明公开了一种多个发光二极管晶片的封装，包括：透明板；多个发光二极管晶片，其位于透明板的正面；相对向的两个正面光反射墙，其设于透明板的正面，且位于多个发光二极管晶片的对向两外侧；正面荧光粉胶，其填充于相对向的两个正面光反射墙之间；相对向的两个背面光反射墙，其设于透明板的背面；以及背面荧光粉胶，其填充于相对向的两个背面光反射墙之间。从而，本发明能够实现在封装的正面及背面两面出光，并同时增加了正面及背面两面的出光效率。

Description

多个发光二极管晶片的封装
技术领域
本发明涉及一种发光二极管晶片的封装，尤其涉及一种可正面及背面两面出光的多个发光二极管晶片的封装。
背景技术
发光二极管晶片的封装的一般构造是在发光二极管晶片上覆盖荧光粉胶，而成白光出光，其可拿来装配在电路板上等，应用于各种产品，例如灯具、电视机的背光模块等。
具有光反射墙的发光二极管晶片的封装，一般是在封装的壳体的墙部内面做成光反射面，而能将前述发光二极管晶片射向侧面的光线反射回去，激发更多前述的荧光粉胶中靠近外缘部分的荧光粉，并且该光反射面亦将所激发荧光粉的光线反射出去，以增加出光效率。
发光二极管晶片的封装有单个晶片的封装，或多个晶片以电路联接的封装，多个发光二极管晶片的封装与单个晶片的封装的产品特征的不相同点在于，利用前者来做成灯具其后续构造及工艺过程较简单，不须用大量的单个晶片的封装一个一个的一再焊接在电路板上。
图1所示为现有的一种具有光反射墙的单个发光二极管晶片的封装100，其包括有壳体110，壳体110上部做成光反射墙111，其内面做成光反射面112，光反射面通常为白色，此外，封装100还有发光二极管晶片113，以及荧光粉胶114等。其中，光反射面112能将发光二极管晶片113射向侧面的光线反射回去，激发更多前述荧光粉胶114中靠近外缘部分的荧光粉(图中未示出)，并且光反射面亦将所激发荧光粉的光线反射出去，以增加出光效率。
图2所示为图1现有的一种具有光反射墙的单个发光二极管晶片的封装100的剖面图，用来解释上述光反射墙111的光反射面112的作用，如图2所示，发光二极管晶片113射向侧面的参考光线A B C D以及D’C’B’A’被光反射面112反射回去，激发更多前述荧光粉胶114中靠近外缘部分的荧光粉115，并且光反射面112亦将所激发荧光粉115的光线反射出去。
图3所示为另一现有的一种具有光反射墙的多个发光二极管晶片的封装300，其包括有基座310，基座310的上面设有光反射墙311，其内面做成光反射面312，光反射面通常为白色，此外，还有多个发光二极管晶片313，以及荧光粉胶314等。其中，光反射面312能将发光二极管晶片313射向侧面的光线反射回去，激发更多前述荧光粉胶314中靠近外缘部分的荧光粉(图中未示出)，并且光反射面亦将所激发荧光粉的光线反射出去，以增加出光效率。光反射墙311的作用如图2所述。
再者，前述这些封装，通常是在这些封装的固着晶片的固晶台面再做成光反射面，以将发光二极管晶片的底面的出光再反射出去，再增加出光的效率，如图1的固晶台面116，以及图3的固晶台面316。所以现有的发光二极管晶片的封装仅能实现正面的单面出光，以及正面的单面增加出光效率而已，无法正面及背面两面同时出光，以及无法再进一步增加背面的出光效率。
发明内容
本发明提供一种多个发光二极管晶片的封装，在透明板的正面的单面上固着多个发光二极管晶片，并且在透明板的正面及背面两面都设有光反射墙，以及荧光粉胶，而实现在封装的正面及背面两面出光，并同时增加了正面及背面两面的出光效率。
本发明的一种多个发光二极管晶片的封装，包括有：透明板，其具有位于相对向的正面与背面；多个发光二极管晶片，其位于透明板的正面；相对向的两个正面光反射墙，其设于透明板的正面，且位于多个发光二极管晶片的对向两外侧；正面荧光粉胶，其填充于相对向的两个正面光反射墙之间；相对向的两个背面光反射墙，其设于透明板的背面；以及背面荧光粉胶，其填充于相对向的两个背面光反射墙之间。
这样，在透明板的正面，多个发光二极管晶片的正面的正向光会直接向上射出去，激发正面荧光粉胶中靠近中间部分的荧光粉，正面的侧向光则会被在透明板正面的正面光反射墙反射回去，激发更多正面荧光粉胶中靠近外缘部分的荧光粉，并且正面光反射墙亦将所激发荧光粉的光线反射出去，而增加了封装正面的出光效率。
又，在透明板的背面，多个发光二极管晶片的底面的底向光会直接向下射出去，激发背面荧光粉胶中靠近中间部分的荧光粉，底面的侧向光则会被在透明板的背面光反射墙反射回去，激发更多背面荧光粉胶中靠近外缘部分的荧光粉，并且背面光反射墙亦将所激发荧光粉的光线反射出去，而增加了封装背面的出光效率，实现在封装的正面及背面两面出光，并同时增加了正面及背面两面的出光效率的功效。
此外，上述的正面荧光粉胶或背面荧光粉胶除了掺入黄光荧光粉外，亦可以再掺入少许的红光荧光粉，以提高演色性。
附图说明
图1是现有的一种具有光反射墙的单个发光二极管晶片的封装的外观示意图。
图2是图1现有的一种具有光反射墙的单个发光二极管晶片的封装的剖面图。
图3是另一现有的一种具有光反射墙的多个发光二极管晶片的封装的外观示意图。
图4是本发明多个发光二极管晶片的封装的外观示意图。
图5是图4所示本发明多个发光二极管晶片的封装的剖面图。
具体实施方式
有关本发明的前述及其他技术内容、特点与功效，在以下配合参考附图的实施例详细说明当中，将可清楚的呈现。
请参阅图4以及图5所示，依照本发明的多个发光二极管晶片的封装400包括有透明板410、多个发光二极管晶片420、相对向的两个正面光反射墙430、正面荧光粉胶440、正面荧光粉胶中的荧光粉441、相对向的两个背面光反射墙450、背面荧光粉胶460、以及背面荧光粉胶中的荧光粉461，可发出白光等颜色光。
透明板410为可以透过光线呈现清澈或略带雾蒙的板材，其材质例如为玻璃、塑胶、树脂或氧化铝等。透明板410界定有位于相对向的正面411与背面412。
多个发光二极管晶片420固着于透明板410的正面411，其中发光二极管晶片420可发出蓝光或紫外光。该多个发光二极管晶片420的电源导通，可用金线、合金线、铜线或铝线等跨接线材421跨接各发光二极管晶片420的正、负电极，使其连接成为串联电路、或并联电路、或先串联后再将各串联并联起来的电路、或先并联后再将各并联串联起来的电路，之后将该电路的最前端与最后端的发光二极管晶片的正电极和负电极分别与固着于透明板410上的两个端板413跨接，端板413即可以连接至电源(图中未示出)，以提供多个发光二极管晶片420点亮所需的电源。一实施例中，发光二极管晶片420可覆晶设置于端板413上(图中未示出)，提高发光二极管晶片420散热效率，增加封装400的可靠度。另一实施例中，发光二极管晶片420所发的光的波长约为370纳米至530纳米之间，用以激发绿光荧光粉、黄光荧光粉或红光荧光粉，利用不同颜色光调整实现所需的色温，例如冷白光或暖白光。又一实施例中，发光二极管晶片420所发的光的波长约为600纳米至630纳米之间，用以激发蓝光荧光粉，调整实现所需的色温，例如冷白光或暖白光。
相对向的两个正面光反射墙430设于透明板410的正面411，如图5所示。正面光反射墙430可用液态硅胶，用点胶机点画在透明板410的正面411，且位于多个发光二极管晶片420的对向两外侧，液态硅胶经熟化后，其外形断面会依表面张力以及对透明板410的湿润性，各自然成形为断面近似倒V字型或倒U字形，如图5剖面图所示的正面光反射墙430形状，足以作为光的反射面431。相对向的两个正面光反射墙430与位于其中间的多个发光二极管晶片420的距离并不须精细限制，只要多个发光二极管晶片420的正面的侧向光所及之处，正面光反射墙430的光反射面431都会有反射效果，其参考光线路径如图5的A B C D以及D’C’B’A’所示。此外，液态硅胶的粘度可为约3500cps(Centipoises)，正面光反射墙430的材质可为硅胶、环氧树脂、玻璃或亚克力等。
正面荧光粉胶440的材质可为掺有荧光粉441的透明硅胶等，正面荧光粉胶440处于液态时填充于相对向的两个正面光反射墙430之间，并掩盖住多个发光二极管晶片420，且经熟化而定形。填充于相对向的两个正面光反射墙430之间的正面荧光粉胶440，其断面亦近似倒V字形或倒U字形。正面荧光粉胶440的荧光粉441可为黄光荧光粉、红光荧光粉、绿光荧光粉或蓝光荧光粉等。
再者，在透明板410的背面412设有相对向的两个背面光反射墙450，如图5所示，其同正面光反射墙430的做法，可用液态硅胶，用点胶机点画在透明板410的背面412，且位于与正面光反射墙上下垂直相对的位置，液态硅胶经熟化后，其外形断面会依表面张力以及对透明板410的湿润性，各自然成形为断面近似V字型或U字形，如图5剖面图所示的背面光反射墙450形状，足以作为光的反射面451。相对向的两个背面光反射墙450的光反射面451与正面的多个发光二极管晶片420的距离并不须精细限制，只要该多个发光二极管晶片420的底面的侧向光所及之处，背面光反射墙450的光反射面451都会有反射效果，其参考光线路径如图5的E F G H以及H’G’F’E’所示。此外，液态硅胶的粘度可为约3500cps(Centipoises)，背面光反射墙450的材质可为硅胶、环氧化物、玻璃或亚克力等。
背面荧光粉胶460的材质可为掺有荧光粉461的透明硅胶等，背面荧光粉胶460亦是处于液态时填充于相对向的两个背面光反射墙450之间，并掩盖住透明板410的背面412在相对向的两个背面光反射墙450之间的部分，且经熟化而定形。填充于相对向的两个背面光反射墙450之间的背面荧光粉胶460，其断面亦近似倒V字形或倒U字形。背面荧光粉胶460的荧光粉461可为黄光荧光粉、红光荧光粉、绿光荧光粉或蓝光荧光粉等。
另外，为了要让透明板410正面411的出光和背面412的出光的色温趋于一致，可以依调整两面的荧光粉胶440和460所掺入荧光粉441和461的比例不同而获得。
正面荧光粉胶440或背面荧光粉胶460除了掺入黄光荧光粉外，亦可以再掺入少许的红光荧光粉(图中未示出)，以提高演色性。

Claims (10)

1.一种多个发光二极管晶片的封装，其特征在于，包括：
透明板，其具有位于相对向的正面与背面；
多个发光二极管晶片，其位于所述透明板的正面；
相对向的两个正面光反射墙，其设于所述透明板的正面，且位于所述多个发光二极管晶片的对向两外侧；
正面荧光粉胶，其填充于所述相对向的两个正面光反射墙之间；
相对向的两个背面光反射墙，其设于所述透明板的背面；以及
背面荧光粉胶，其填充于所述相对向的两个背面光反射墙之间。
2.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面荧光粉胶和/或所述背面荧光粉胶掺有黄光荧光粉、红光荧光粉、绿光荧光粉或蓝光荧光粉。
3.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述发光二极管晶片发出蓝光或紫外光。
4.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面光反射墙或所述背面光反射墙的断面近似倒V字形或倒U字形。
5.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述透明板的材质为玻璃、塑胶、树脂或氧化铝。
6.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，由所述透明板的正面射出的光的色温和由所述透明板的背面射出的光的色温一致。
7.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面荧光粉胶掺有荧光粉的比例和所述背面荧光粉胶掺有荧光粉的比例不同。
8.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面荧光粉胶或所述背面荧光粉胶的断面为倒V字形或倒U字形。
9.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面光反射墙或背面光反射墙的材质为硅胶、环氧化物、玻璃或亚克力。
10.如权利要求1所述的一种多个发光二极管晶片的封装，其特征在于，所述正面荧光粉胶掩盖所述多个发光二极管晶片。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106531857A (zh) * 2016-12-28 2017-03-22 芜湖聚飞光电科技有限公司 一种芯片级led封装结构及封装工艺
CN106784240A (zh) * 2016-12-23 2017-05-31 佛山市国星光电股份有限公司 一种白光led器件的封装方法及其led器件及其led灯

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3271952A1 (en) 2015-03-16 2018-01-24 Plessey Semiconductors Limited Light emitting diode chip and a method for the manufacture of a light emitting diode chip

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141813A1 (en) * 2002-01-31 2003-07-31 Citizen Electronics Co., Ltd. Double-face LED device for an electronic instrument
CN101635327A (zh) * 2009-07-09 2010-01-27 江苏伯乐达光电科技有限公司 发光二极管的封装方法
US20120300430A1 (en) * 2011-05-27 2012-11-29 Toshiba Lighting & Technology Corporation Light-emitting module and lighting apparatus
US20120299022A1 (en) * 2011-02-16 2012-11-29 Hussell Christopher P Light emitting devices and methods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007165811A (ja) * 2005-12-16 2007-06-28 Nichia Chem Ind Ltd 発光装置
JP5545547B2 (ja) * 2010-10-07 2014-07-09 東芝ライテック株式会社 光源体および照明器具
TWI421328B (zh) * 2011-09-06 2014-01-01 Ind Tech Res Inst 螢光材料與白光發光裝置
TWM455263U (zh) * 2013-01-28 2013-06-11 Harvatek Corp 複數個藍光發光二極體的白光封裝

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030141813A1 (en) * 2002-01-31 2003-07-31 Citizen Electronics Co., Ltd. Double-face LED device for an electronic instrument
CN101635327A (zh) * 2009-07-09 2010-01-27 江苏伯乐达光电科技有限公司 发光二极管的封装方法
US20120299022A1 (en) * 2011-02-16 2012-11-29 Hussell Christopher P Light emitting devices and methods
US20120300430A1 (en) * 2011-05-27 2012-11-29 Toshiba Lighting & Technology Corporation Light-emitting module and lighting apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106784240A (zh) * 2016-12-23 2017-05-31 佛山市国星光电股份有限公司 一种白光led器件的封装方法及其led器件及其led灯
CN106784240B (zh) * 2016-12-23 2019-01-01 佛山市国星光电股份有限公司 一种白光led器件的封装方法及其led器件及其led灯
CN106531857A (zh) * 2016-12-28 2017-03-22 芜湖聚飞光电科技有限公司 一种芯片级led封装结构及封装工艺

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