CN104425316A - Layer separation apparatus - Google Patents

Abstract

The present invention relates to a layer separation apparatus, and more particularly to an apparatus for separating a coating layer from a base substrate in a flexible display process. An embodiment layer separation apparatus of the present invention includes: a chamber having an inner space and a window provided on an upper wall thereof; a laser radiation unit configured to irradiate a laser beam onto the inner space through the window; a light source sensor , configured to emit light toward a device substrate provided in the internal space and receive the light reflected therefrom; a display unit configured to display a light reception value measured from the light source sensor; and a substrate transfer a plate configured to support the device substrate in the inner space of the chamber to pass the device substrate to slide under the window during a laser beam irradiation process and to pass the device substrate after the laser beam has been completed The device substrate is passed to slide under the light source sensor after the irradiation process.

Description

Layer Separation Equipment

technical field

The present invention relates to a layer separation apparatus, and more particularly to an apparatus for separating a coating layer from a base substrate in a flexible display process.

Background technique

Monocrystalline or polycrystalline silicon transistors have been widely used in displays due to their excellent switching characteristics due to high electron mobility. It is necessary to perform heat treatment at a predetermined temperature or higher in a nitrogen atmosphere for manufacturing a silicon transistor having excellent switching characteristics, and a glass substrate having low thermal deformation at a high temperature is used as a base substrate due to the high processing temperature The bottom is used to form the film of the silicon transistor.

As next-generation displays, flexible displays manufactured in various forms (for example, flexible displays that are not only thin and light but also shock-resistant, flexible and bendable) have been extensively researched. It is difficult to apply silicon transistors to flexible displays due to their low flexibility characteristics and limitations in the base substrate. In recent years, as a method for manufacturing a flexible semiconductor device, a method for using a thin glass plate as a substrate, a method for using a metal plate as a substrate, and a method for The study was carried out using a plastic substrate method.

(a) to (f) of FIG. 1 illustrate an example of a method for manufacturing an AMOLED flexible semiconductor device.

A base substrate 11 is provided as illustrated in (a) of FIG. 1 , and a plastic coating layer 12 is thinly coated on the top surface of the base substrate 11 as illustrated in (b) of FIG. 1 . The plastic coating layer 12 is made of polyimide (PI) which can be continuously used in heat treatment process. Next, as illustrated in (c) of FIG. 1, a plurality of semiconductor devices 13, that is, active matrices that have been subjected to a laser low-temperature polysilicon (LTPS) process, are formed on the top surface of the plastic coating layer 12. Organic light emitting diode (active matrix organic light emitting diode, AMOLED) device. After forming a plurality of semiconductor devices 13 on the top surface of the plastic coating layer 12, as illustrated in FIG. 1(d), an upper protective film 14 is formed on the uppermost surface. After the upper protective film 14 is formed, the plastic coating layer 12 formed on the top surface of the base substrate 11 is separated from the base substrate 11 as illustrated in (e) of FIG. 1 . Thereafter, as illustrated in (f) of FIG. 1 , an underlayer protective film 15 is formed on the bottom surface of the plastic coating layer 12 separated from the base substrate 11, thus obtaining a final flexible OLED device.

In this case, a method of performing interface separation between the base substrate and the plastic coating layer in (e) of FIG. 1 by removing the base substrate 11 using a laser lift-off (LLO) process . In other words, the bonding strength between the base substrate 11 and the plastic coating layer 12 is reduced by irradiation of the laser (L), thereby separating the base substrate 11 from the plastic coating layer 12 and removing the base substrate 11 .

However, in the related art, the interface separation between the base substrate 11 and the plastic coating layer 12 is inspected only by the naked eye, and there is no method for inspecting the state of the interface separation using data. Therefore, the test for interfacial separation is unreliable and inaccurate.

[Related technical literature]

[Patent Document]

Patent Document 1: Korean Patent Application Publication No. 10-2011-0131017

Contents of the invention

The present invention provides an apparatus for separating a base substrate and a plastic coating layer from each other. The present invention also provides an apparatus for inspecting whether a base substrate and a plastic coating layer are separated. The present invention also enhances the reliability of the detection of separation of the base substrate and the plastic coating layer.

According to an exemplary embodiment, a layer separation apparatus includes: a chamber having an inner space and a window provided on an upper wall thereof; a laser radiation unit configured to irradiate a laser beam onto the inner space through the window a light source sensor configured to emit light toward a device substrate disposed in the internal space and receive light reflected from the device substrate; a display unit configured to display a light reception value measured from the light source sensor; and a substrate transfer plate configured to support the device substrate in the inner space of the chamber to transfer the device substrate to slide under the window during a laser beam irradiation process and to The device substrate is transferred to slide under the light source sensor after the laser beam irradiation process.

And, the layer separation apparatus may further include: an inspection processing unit configured to determine whether the light reception value falls within a reference value range, and generate interface separation success when the light reception value falls within the reference value range and an alarm of interface separation failure is generated when the light-receiving value is outside the range of the reference value.

And, when the light reception value is outside the reference value range, the device substrate may be transferred again and irradiated with a laser beam.

Also, the device substrate may include a base substrate, a plastic coating layer, a semiconductor device, and a protective film stacked in sequence, and the surface to which the laser beam is irradiated is the surface of the base substrate.

And, the plastic coating layer can be any one selected from the following: polyethylene naphthalate (polyethylenenaphthelate, PEN), polyethylene terephthalate (polyethyleneterephthalate, PET), polycarbonate (polycarbonate, PC), polyphenylene sulfone (polyethylene sulfone, PES), polyimide (polyimide, PI), polyallylate (polyallylate, PAR), polycyclic olefin (polycyclic olefin, PCO), polymethacrylic acid Methyl ester (polymethylmethacrylate, PMMA), cross-linking type epoxy resin (cross-linking type epoxy) and cross-linking type polyurethane film (cross-linking type urethane film).

Description of drawings

Exemplary embodiments can be understood in more detail from the following description in conjunction with the accompanying drawings.

(a) to (f) of FIG. 1 illustrate an example of a method for manufacturing an active matrix organic light emitting diode (AMOLED) flexible semiconductor device.

FIG. 2 illustrates a layer separation apparatus in which a laser beam is irradiated onto a semiconductor device substrate according to an exemplary embodiment.

FIG. 3 illustrates a layer separation apparatus in which layer separation of a semiconductor device substrate is inspected by a light source sensor according to an exemplary embodiment.

Figure 4 illustrates a substrate table according to an exemplary embodiment.

FIG. 5 illustrates a semiconductor device substrate on a substrate transfer plate according to an exemplary embodiment.

FIG. 6 is a conceptual cross-sectional view illustrating a light source sensor configured by RGB sensors according to an exemplary embodiment.

FIG. 7 illustrates light emitted and received by a light source sensor after irradiating a laser beam onto a surface of a base substrate according to an exemplary embodiment.

FIG. 8 is a conceptual block diagram for verifying whether separation of a layer separation device is successful, according to an exemplary embodiment.

FIG. 9 is an image showing an additional display unit with an input member according to an exemplary embodiment.

FIG. 10 illustrates a situation in which laser beams are irradiated in a dual processing chamber according to an exemplary embodiment.

FIG. 11 illustrates a scenario in which inspection of layer separation is performed using a light source sensor in a dual processing chamber according to an exemplary embodiment.

Explanation of main component labels:

10: Substrate

10a: First semiconductor device substrate

10b: Second semiconductor device substrate

11: Base substrate

12: Plastic coating layer

13: Semiconductor device

14: Upper protective film

15: Lower protective film

100: chamber

100a: upper wall

100b: subject

200: substrate table

210: Linear Motor Guide

220: Y-axis transmission plate

230: substrate transfer plate

300: window

400: light source sensor

400a: light source sensor

400b: Light source sensor

400c: light source sensor

410: light emitting part

420: Light receiving part

500: laser radiation unit

600: display unit

700: Check processing unit

Detailed ways

Hereinafter, exemplary embodiments will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will convey to those skilled in the art fully convey the concept of the invention. Furthermore, the present invention is limited only by the scope of the claims. Like reference numerals in the figures indicate like devices.

Hereinafter, a device substrate refers to a substrate in which a plastic coating layer is coated on a base substrate and a plurality of devices are deposited on the plastic coating layer. The devices may include semiconductor devices and the like. In the following description, a semiconductor device substrate will be described as an example of the device substrate; however, the present invention is applicable to various device substrates other than the semiconductor device substrate.

2 illustrates a layer separation apparatus according to an exemplary embodiment in which a laser beam is irradiated onto a semiconductor device substrate, and FIG. 3 illustrates a layer separation apparatus according to an exemplary embodiment in which the semiconductor device substrate is inspected by a light source sensor. Layer separation.

The chamber 100 has a substrate table 200 that supports a semiconductor device substrate 10 in an inner space of the chamber 100, and layer separation is performed on the semiconductor device substrate 10 placed on the substrate table 200 by laser processing. . And, the chamber 100 includes: a main body 100b whose upper part is open; and an upper wall 100a which is a top cover covering the upper part of the main body and which can be opened and closed. Although not shown, the chamber 100 has a door on a side wall, which is a through-path through which the semiconductor device substrate 10 is transferred to the inner space.

The chamber 100 has a window 300 made of a transparent material on its upper wall 100a and for example has a through-area in a part of the upper wall 100a of the chamber 100 such that the through-area acts as a window. Specifically, a window holding body (not shown) is installed in a straight-through area on the upper wall of the chamber 100, and the window 300 is held and supported by the window holding body, thereby placing the window 300 on the upper wall of the chamber 100. superior. The window 300 is made of quartz or the like, and thus allows the laser beam oscillated from the laser radiation unit 500 to pass through the window 300 and propagate toward the semiconductor device substrate 10 on the substrate stage 200 . And, a plurality of light source sensors 400 (400a, 400b, 400c) arranged opposite to the substrate table 200 are provided in a lower portion of the upper wall 100a of the chamber, and face the semiconductor device substrate 10 placed on the substrate table 200. The light reflected from the surface of the semiconductor device substrate 10 is emitted and received, which will be described later.

The substrate table 200 as illustrated in FIG. 4 has a surface plate structure and thus has a substrate transfer plate 230 in which semiconductor device substrates are placed such that the substrate transfer plate 230 can move along the linear motor (LM) Guide movement. In other words, the Y-axis transfer plate 220 moves along the LM guide 210 in the X-axis direction, and the substrate transfer plate 230 moves along the Y-axis transfer plate 220 in the Y-axis direction. Therefore, the semiconductor device substrate placed on the substrate transfer plate 230 is positioned at an appropriate position because the semiconductor device substrate can pass horizontally in the X-axis and Y-axis directions and through the horizontal during the laser layer separation and inspection process. Rotate to move. Herein, the X axis and the Y axis may include any axes forming a 2-dimensional plane. The definitions of the X-axis and the Y-axis also apply to the following description. Also, horizontal rotation means that when a substrate support structure (not shown) on which a substrate is placed is additionally provided in the substrate transfer plate 230, a semiconductor device substrate placed on the substrate support structure can be supported by the substrate. The structure rotates while rotating.

Meanwhile, the semiconductor device substrate 10 is placed on the substrate transfer plate 230 of the substrate stage 200, wherein as illustrated in FIG. A layer 12 is arranged on a base substrate 11 and a plurality of semiconductor devices 13 are deposited on the plastic coating layer 12 and covered with a protective film 14 . Also, the semiconductor device substrate 10 may be a substrate without the protective film 14 .

The protective film 14 is placed in contact with the upper surface of the substrate transfer plate 230 , and the base substrate 11 is positioned farthest from the substrate transfer plate 230 . Thus, the laser beam is irradiated onto the surface of base substrate 11 . Similarly, the light source sensor can also emit light towards the base substrate and receive light.

The above base substrate 11 may include glass substrates, ceramic substrates, and metal-polysilicon or polymer substrates; however, base substrates are not limited thereto, and thus have various types of thermal stability at high substrate temperatures. The base substrate is applicable. Also, since the base substrate according to the exemplary embodiment is separated and removed in a subsequent process, it does not need to be transparent, but various and inexpensive materials can be used for the substrate as long as they have Thermal stability is sufficient regardless of its transparency.

Therefore, the plastic coating layer 12 applied to the base substrate 11 may be made of a flexible material having flexibility, and may contain any one selected from the following: polyethylene naphthalate (PEN), polyethylene terephthalate Ethylene dicarboxylate (PET), polycarbonate (PC), polyphenylsulfone (PES), polyimide (PI), polyallyl compound (PAR), polycyclic olefin (PCO), polymethylene Acrylic methyl acrylate (PMMA), cross-linked epoxy resin and cross-linked polyurethane film. Additionally, the plurality of semiconductor devices 13 deposited on the plastic coating layer 12 may include OLED semiconductor devices that have been crystallized from low temperature polysilicon (LTPS).

The laser radiation unit 500 oscillates the laser beam into the inner space of the chamber through the window 300 so as to radiate the laser beam onto the surface of the semiconductor device substrate 10 . The laser radiation unit 500 may be further provided with a reflection mirror (not shown) and the laser beam emitted from the laser radiation unit 500 is reflected from the reflection mirror and thus radiated toward the surface of the semiconductor device substrate. Examples of the laser light source of the laser radiation unit 500 may include at least one selected from each of the following: gas lasers, for example, Ar lasers, Kr lasers, and excimer lasers; One or more dopants of titanium (Ti), holmium (Ho), erbium (Er), thulium (Tm) and tantalum (Ta) are added to, for example, YAG, YV04, forsterite (Mg2SiO4), YA103 and Lasers in single crystals such as GdV04 or media in polycrystals (ceramics) such as YAG, Y203, YV04, YA103 and GdV04; glass lasers; ruby lasers; alexandrite lasers; Ti:sapphire lasers; copper vapor lasers and gold vapor lasers. Desirably, the laser beam may be a line-shaped beam that concentrates the beam more easily than a surface-shaped beam that collectively irradiates the entire surface of the substrate.

As illustrated in FIG. 5, the surface (opposite surface) to which the laser beam is irradiated is the base substrate, and thus when the base substrate, plastic coating layer, semiconductor device, and protective film are sequentially stacked, the laser beam is irradiated to the base substrate. on the bottom surface of the bottom 11. Laser beam irradiation causes a change in the interface between base substrate 11 and plastic coating layer 12 , thereby separating base substrate 11 and plastic coating layer 12 from each other. The laser beam reduces the adhesive strength of the interface, thereby separating the base substrate and the plastic coating layer from each other.

Meanwhile, in order to check whether the separation between the base substrate 11 and the plastic coating layer 12 was successful due to the laser beam used for layer separation, the substrate transfer plate 230 was moved to allow the semiconductor device substrate 10 to move under the light source sensor 400 at Y slide in the direction of the axis.

The light source sensor 400 is disposed in a lower portion of the upper wall of the chamber so as to emit and receive light. Examples of the light source sensor 400 may include an RGB sensor and an infrared sensor, and when the light source sensor is configured by the RGB sensor, the RGB sensor emits visible light and receives light reflected therefrom. The light source sensor 400 emits light toward a semiconductor device substrate and then receives light reflected from the surface of the semiconductor device substrate. In other words, the surface to which the emitted light reaches is the surface of the base substrate, and thus when the base substrate, plastic coating layer, semiconductor device, and protective film are sequentially stacked, the laser beam is irradiated to the surface of the base substrate 11. on the surface. FIG. 6 is a conceptual cross-sectional view illustrating a light source sensor configured by RGB sensors. The light source sensor 400 configured by an RGB sensor includes a light emitting part 410 and a light receiving part 420 and emits visible light from the light emitting part 410, wherein the emitted light is transmitted through the base substrate 11 or completely reflected from the base substrate 11, and the transmitted light A part of the light is again guided by total reflection or refraction from the plastic coating layer 12 . Therefore, part of the emitted light is reflected from the surface of base substrate 11 again. The light receiving portion 420 of the light source sensor 400 collects light reflected from the surface of the base substrate 11 . In addition, a plurality of light source sensors may be provided, and for example, three light source sensors are provided in a row, ie, a first light source sensor 400a, a second light source sensor 400b, and a third light source sensor 400c, as illustrated in FIGS. 2 and 3 . Thus, light can be emitted or received at multiple portions of the base substrate simultaneously.

For reference, FIG. 7 illustrates light emitted and received by the light source sensor after radiating a laser beam onto the surface of the base substrate. The laser beam may scan the entire surface of the base substrate 11 as the base substrate moves in the Y-axis direction under the window.

Laser beam irradiation reduces the adhesive strength of the interface between base substrate 11 and plastic coating layer 12 , thereby causing separation of plastic coating layer 12 from base substrate 11 . In order to check whether the layer separation was completely successful, the substrate transfer plate was transferred in the Y-axis direction to allow the base substrate to move slowly in the Y-axis direction under the light source sensor 400 . Through the three light source sensors 400a, 400b, 400c, light reflected from three points on the surface of the base substrate may be received. Therefore, when three light source sensors are provided, scanning is performed on a plurality of points of the first line I, the second line II, and the third line III according to the movement of the base substrate, and light emission and reception can be achieved.

Meanwhile, the light reception value received by the light source sensor 400 may vary depending on whether the interface between the base substrate 11 and the plastic coating layer 12 is completely separated. The above light reception value refers to one of the RGB ratio of received light and the light reception amount which is the amount of received light. As a reference, the RGB ratio of the received light is compared to the RGB ratio of the emitted light. That is, under the condition that the RGB ratio of the emitted light is equal to R:G:B=1:1:1, the RGB ratio of the received light is used to determine the ratio of the RGB ratio of the received light to the emitted light. How much the RGB ratio deviates. The shift of the RGB ratio shows whether the interface separation was successful.

Also, the light reception amount, which is the amount of received light, is used to check the interface separation state by detecting the light reception amount with respect to the light emission amount. The interfacial separation can be checked by using the property that when the interface between the base substrate and the plastic coating layer is fully attached, i.e. at 100% attached, the light acceptance value is highest, and as the interfacial separation begins As a result, the attached state deteriorates and the light reception value becomes low. For example, assuming that when the interface between the base substrate and the plastic coating layer is fully attached, that is, in a 100% attached state, the ratio of the light receiving value to the light emitting value is higher than 90%, at the base When the interface between the substrate and the plastic coating layer is partially separated and the ratio of the interface-attached state is reduced below 50%, the light reception value becomes reduced below 70%. This is because the adhesive strength changes at the interface between the base substrate and the plastic coating layer, thus causing the light reception amount to change due to the different refractive index between the interfaces. A part of the laser beam radiated onto the surface of the base substrate is reflected from the surface by total reflection and then received; however, a part of the laser beam passing through the base substrate is at the interface between the base substrate and the plastic coating layer change its refractive index. When the interfaces are fully attached, the amount of light that is reflected towards the surface of the interface by total reflection increases; however, when the interfaces are partially or completely separated reducing the bond strength, the refracted light that passes through the plastic-coated layer and is guided between the interfaces The amount of becomes larger than the amount of light totally reflected, which in turn reduces the amount of light reflected.

Therefore, according to an exemplary embodiment, whether the interface is separated may be checked by using a property that a light reception value changes depending on whether the interface is separated. To this end, a conceptual block diagram illustrating inspection of a layer separation device according to an exemplary embodiment is illustrated in FIG. 8 .

The light reception value measured by the light source sensor 400 is delivered to and displayed on the display unit 600 provided outside the chamber 100 so that the process operator can determine whether the interface separation is successful. The display unit 600 may be configured by a general display panel, and alternatively may be configured by an additional display unit having an input member as illustrated in FIG. 9 .

According to an exemplary embodiment, a verification processing unit 700 is independently provided, which determines whether the light receiving value falls within a reference value range, and generates an alarm that the interface separation is successful when the light receiving value falls within the reference value range, and at An alarm of interface separation failure is generated when the light reception value is outside a reference value range. For example, when the ratio of the reference value range to the light emission value is 20% to 40% and the ratio of the light reception value to the light emission value is 32%, the verification processing unit 700 generates an alarm that the interface separation is successful. In contrast, when the ratio of the light reception value to the light emission value is 55%, the ratio is outside the reference value range, and thus the inspection processing unit 700 generates an alarm of interface separation failure. The reference value range is a range within which the interface separation between the base substrate and the plastic coating layer is successfully accomplished. The reference value range may be a range of a ratio of a light reception value to a light emission value, but may be set as a reception value range of a light reception amount or an RGB ratio range. The reference value range may be determined according to the kind of the base substrate, and it is particularly desirable to determine the reference value range according to the type of the plastic coating layer.

When the light reception value is outside the reference value range, in addition to generating an alarm of interface separation failure, the inspection processing unit 700 controls the substrate transfer plate 230 to irradiate the laser beam onto the semiconductor device substrate again. In other words, when the light reception value is outside the range of the reference value, the base substrate is not completely separated. Therefore, the substrate transfer plate is passed under the window to irradiate the laser beam onto the semiconductor device substrate again for complete separation.

Meanwhile, the aforementioned layer separation apparatus has been described by exemplifying a single processing chamber, but can also be applied to a double processing chamber. 10 and 11 illustrate the case where a laser beam is irradiated and a light-reception value is detected in a dual processing chamber. Specifically, FIG. 10 illustrates a case of irradiating laser beams in a dual process chamber according to an exemplary embodiment, and FIG. 11 illustrates a case of inspecting layer separation in a dual process chamber by using a light source sensor according to an exemplary embodiment. For reference, the substrate transfer plate on which the semiconductor device substrate is placed and thus transferred is omitted in FIGS. 10 and 11 for better understanding.

As illustrated in FIG. 10, the first semiconductor device substrate 10a is transferred from the first spare area A to the laser beam processing area B in the X-axis direction, and then exposed to the laser beam while being transferred along the Y-axis. In this state, the second semiconductor device substrate 10b is transferred into or out of the second spare area C from the outside through the gate.

When the laser beam irradiation on the first semiconductor device substrate 10a has been completed as illustrated in FIG. 10, as illustrated in FIG. Transfer in the Y-axis direction, and then check whether the interface is separated. Here, the second semiconductor device substrate 10b placed in the second spare area C is input into the laser beam processing area B along the X axis, and exposed to the laser beam while passing in the Y axis direction.

According to exemplary embodiments, it may be inspected whether the base substrate and the plastic coating layer are separated, thereby improving the reliability of the inspection. Also, a light source sensor is used instead of the operator's naked eyes to realize easy and quick inspection. In addition, inspection is performed in the same chamber after the laser beam is irradiated, which makes it possible to simplify the entire flow of the manufacturing process.

Although the layer separation device has been described with reference to certain embodiments, the layer separation device is not limited thereto. Accordingly, it will be readily understood by those skilled in the art that various modifications and changes can be made therein without departing from the spirit and scope of the present invention as defined by the appended claims.

Claims (11)

1. a layer separation equipment, is characterized in that comprising:

Chamber, has inner space and wall is provided with window thereon;

Laser emission unit, to be configured to bombardment with laser beams by described window on described inner space;

Light source sensor, is configured to towards the device substrate utilizing emitted light be arranged in described inner space and receives the described light from described device substrate reflection;

Display unit, is configured to show the light-receiving value measured from described light source sensor; And

Substrate transfer plate, is configured to support described device substrate in the described inner space of described chamber to transmit described device substrate to slide in described beneath window and to transmit described device substrate with in described light source sensor slid underneath after completing described bombardment with laser beams technique during bombardment with laser beams technique.

2. according to claim 1 layer of separation equipment, characterized by further comprising: inspection processing unit, be configured to determine whether described light-receiving value drops in reference range, and be configured to produce the successful alarm of interfacial separation when described light-receiving value drops in reference range, and produce the alarm of interfacial separation failure when described light-receiving value is outside reference range.

3. according to claim 2 layer of separation equipment, wherein when described light-receiving value is outside described reference range, described device substrate is again passed and uses described bombardment with laser beams.

4. according to claim 1 and 2 layer of separation equipment, wherein said device substrate comprises sequentially stacking base substrate, plastic-coated layer, semiconductor device and diaphragm, and is the surface of described base substrate by the surface of laser beam described in radiation.

5. according to claim 4 layer of separation equipment, wherein said plastic-coated layer is selected from each any one following: PEN, PETG, Merlon, PPSU, polyimides, polyallyl compound, polycyclic olefin, polymethyl methacrylate, cross-linking type epoxy resin and cross-linked type polyurethane film.

6. according to claim 4 layer of separation equipment, wherein said light-receiving value depends on the released state at the interface between described base substrate and described plastic-coated layer and changes.

7. according to claim 1 and 2 layer of separation equipment, wherein said light source sensor is RGB transducer.

8. according to claim 7 layer of separation equipment, wherein said light-receiving value is at least one in RGB ratio and light acceptance amount.

9. according to claim 1 and 2 layer of separation equipment, wherein when described device substrate comprises sequentially stacking base substrate, plastic-coated layer, semiconductor device and diaphragm, described reference range determines according to the type of described plastic-coated layer.

10. according to claim 1 and 2 layer of separation equipment, wherein said device is the active matrix organic light-emitting diode device obtained by low temperature polycrystalline silicon.

11. according to claim 1 layers of separation equipment, wherein said light source sensor is arranged in the bottom of the upper wall of described chamber.