CN104423173A - Overlay measurement device and overlay measurement method - Google Patents
Overlay measurement device and overlay measurement method Download PDFInfo
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- CN104423173A CN104423173A CN201310379994.8A CN201310379994A CN104423173A CN 104423173 A CN104423173 A CN 104423173A CN 201310379994 A CN201310379994 A CN 201310379994A CN 104423173 A CN104423173 A CN 104423173A
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Abstract
The invention discloses an overlay measurement device and an overlay measurement method, which are used for detecting an overlay error. The device comprises a light source, an objective lens, a space light modulator and a first spectrograph, wherein the light source is used for providing illumination light beams; the objective lens is used for collecting the illumination light beams on a sample to be detected and collecting diffraction light on the surface of the sample to be detected; the space light modulator is located on an optical pupil face of the objective lens and is used for controlling diffraction light beams with different diffraction levels to pass through; and the first spectrograph is used for measuring a diffraction light spectrum passing through the space light modulator. According to the overlay measurement device, the spectrum measurement is used for replacing the angular spectrum measurement and the influences on the asymmetrical measurement of the corresponding diffraction level of the diffraction light, caused by the illumination heterogeneity, are reduced; and meanwhile, the first spectrograph is used for measuring the diffraction light with the different levels, and the influences on the asymmetrical measurement of the corresponding diffraction level of the diffraction light, caused by the sensitivity heterogeneity of a CCD detector in the angular spectrum measurement, are reduced.
Description
Technical field
The present invention relates to IC manufacturing field, particularly a kind of alignment measurement mechanism and method.
Background technology
According to ITRS(International Technology Roadmap for Semiconductors) the lithography measurements Technology Roadmap that provides, along with litho pattern CD size enters 22nm and following process node, particularly the widespread use of double exposure (Double Patterning) technology, has entered sub-nm regime to the accuracy requirement that alignment (overlay) is measured.Due to the restriction of the imaging resolution limit, traditional alignment measuring technique based on imaging and image recognition can not meet the requirement that new process node is measured alignment gradually.Alignment measuring technique (DBO, Diffraction-Based overlay) based on diffraction light detection just progressively becomes a kind of important means of supplementing out economy that alignment is measured.
DBO is mainly divided into two large classes, one class is called the DBO technology based on model, such technology carries out strict modeling by the CD to overlay mark, side wall angle (SWA), height and alignment parameter, calculates theoretical diffraction spectrum, measured value and theoretical value is carried out contrast and extracts alignment parameter.As long as the major advantage of this kind of technology is that one marks the alignment value that just can record a direction in principle, thus marks cost lower; But, because alignment measures the position deviation need extracted between two-layer graphic structure, a large amount of unknown parameters in this double-layer structure all need embody when modeling, assessing the cost of modeling is improved greatly, the computing cluster of usual tens CPU needs several days time to carry out modeling to one deck graphic structure, along with the increase of the figure number of plies, the modeling time will increase in geometric index.Secondly, between these unknown parameters and alignment parameter, often crosstalk mutually, when measured value and theoretical value are made comparisons, cannot correctly extract alignment parameter.Therefore, this technology due to its assess the cost, the time, the reasons such as parameter extraction precision, apply seldom aborning.
The another kind of DBO technology be called based on experience, such technology directly uses lowfunction matching diffraction light diffraction efficiency with the situation of change of alignment parameter, by collection signal on the mark of multiple different predetermined deviation (offset), calculates alignment parameter.This kind of technology common are two kinds of measuring methods, and a kind of method measures the signal of 0 order diffraction light spectrum on multiple mark with certain predetermined deviation of incident light.Due to 0 order diffraction signal with alignment parameter be even function change, these signals of method matching such as quadratic function can be used in the hope of alignment value.Assessing the cost of this method is almost nil, and traditional reflectometer can be used to measure.But because diffraction light even function signal intensity is more complicated, multiple overlay mark need be set and could obtain good fitting precision to provide enough signal samplings, thus obtain higher measuring accuracy.Generally, the alignment parameter in the minimum needs of a method 4 mark measurement direction, therefore marks cost very high.
Another kind of method based on the DBO technology of experience realizes by measuring the secondary asymmetry of the positive and negative level of diffraction light.The method, by measuring the angular spectrum of diffraction light, identifies the positive and negative level time of corresponding incident light and calculates their asymmetry.Due to positive and negative level time asymmetry within the specific limits approximate and alignment parameter be directly proportional, the minimum measurement that the mark of two predetermined deviation symmetries can be used to realize a direction alignment parameter of the method.Equally, this empirical method does not also almost assess the cost.
In sum, because mark cost is low, almost without computational resource requirements and precision advantages of higher, the technology of the asymmetry measurement overlay error of senior the diffraction light of the use based on experience has advantage.This technology, by recording the angular spectrum of overlay mark diffraction light in a large NA objective lens pupil face, calculates the asymmetry that in angular spectrum, the corresponding order of diffraction is secondary and tries to achieve alignment.This technology mainly faces following problem:
1, this technology adopts the incident light of multiple incident angles of space separation to measure the angular spectrum of diffraction light simultaneously, and recording angular spectrum affects by illumination heterogeneity;
2, this technology detects +/-level time diffraction light light intensity at the diverse location of ccd detector simultaneously, when asking +/-level time asymmetry, by the impact of ccd detector pixel sensitivity unevenness.
Summary of the invention
The invention provides a kind of alignment measurement mechanism and method, lighting space heterogeneity and detector sensitivity heterogeneity can be reduced on the impact of diffraction light nonuniform measurement.
For solving the problems of the technologies described above, the invention provides a kind of alignment measurement mechanism, for detecting overlay error, comprising: light source, for providing illuminating bundle; Object lens, for illuminating bundle is converged to testing sample, and collect the diffraction light on testing sample surface; Spatial light modulator, is positioned at objective lens pupil face, for controlling passing through of the secondary diffracted beam of different diffraction level; First spectrometer, for measuring the diffraction light spectrum by spatial light modulator.
As preferably, in described alignment measurement mechanism, described light source adopts broadband light source.
As preferably, in described alignment measurement mechanism, described broadband light source comprises: Xe lamp, halogen tungsten lamp and deuterium lamp.
As preferably, in described alignment measurement mechanism, the illuminating bundle that described light source sends, by after illumination path and beam splitter, projects on object lens.
As preferably, in described alignment measurement mechanism, another beam projection after beam splitter is on a detector.
As preferably, in described alignment measurement mechanism, described detector adopts photodiode or the second spectrometer.
As preferably, in described alignment measurement mechanism, described spatial light modulator adopts iris or shutter.
As preferably, in described alignment measurement mechanism, described spatial light modulator is through mode spatial light modulator, and described through mode photomodulator comprises transmission region and alternatively non-transparent region.
As preferably, in described alignment measurement mechanism, after an optical system, enter the first spectrometer by the diffraction light of described spatial light modulator.
As preferably, in described alignment measurement mechanism, described spatial light modulator is digital micromirror array.
The present invention is a kind of alignment measuring method also, is applied in described alignment measurement mechanism, comprises: step 1: open light source, moves on first cover triplet mark of testing sample by measuring hot spot; Step 2: switch spatial light modulator, make senior the diffraction light in a direction pass through and be passed to the first spectrometer, stops senior diffraction light and the zero level time diffraction light in another direction simultaneously; Step 3: the spectrum of senior the diffraction light in a first spectrometer measurement direction; Step 4: switch spatial light modulator, make senior the diffraction light in another direction pass through and be passed to the first spectrometer; Step 5: the spectrum of senior the diffraction light in first another direction of spectrometer measurement; Step 6: measure hot spot and move on second cover triplet mark, repeat step 2 ~ 5; Step 7: calculate the asymmetry that first, second cover triplet marks senior diffraction light; Step 8: calculate overlay error value according to asymmetry.
As preferably, in described alignment measuring method, adopt formula A=I
+ 1-I
-1, calculate asymmetry; Wherein, I
+ 1, I
-1when being respectively in incident light normal incidence to testing sample, the light intensity of +/-1 grade of light.
As preferably, in described alignment measuring method, adopt formula
calculate overlay error value;
Wherein, A
1be the asymmetry that first cover triplet mark records, A
2be the asymmetry that second cover triplet mark records, Δ is predetermined deviation.
Compared with prior art, the present invention has the following advantages:
1, adopt spectral measurement to substitute angular spectrum to measure, diffraction light respective stages time light intensity is detected.Because spectral measurement records the spectrum of electric light source and lighting ensemble average value, solve during angular spectrum is measured and be subject to the non-homogeneous sex problem of electric light source and lighting.
2, by usage space photomodulator, different diffraction level time diffraction light is measured and is separated in time; Adopt same spectrometer to measure time diffraction light not at the same level, solve during angular spectrum is measured and use ccd detector different piece to measure different diffraction light, thus introduce the heteropical problem of detector pixel sensitivity.
3, the present invention is directed to and use the technical scheme of the corresponding order of diffraction time diffraction intensity asymmetry to be optimized, when making measurement different diffraction level time light intensity, precision is higher, consistance better, thus improves overlay error accuracy of detection.
Accompanying drawing explanation
Fig. 1 is the structural representation of alignment measurement mechanism in the embodiment of the present invention 1;
Fig. 2 is the structural representation of a kind of spatial light modulator in the embodiment of the present invention 1;
Fig. 3 is overlay mark cross sectional representation in the embodiment of the present invention 1;
Fig. 4 a and Fig. 4 b is respectively the vertical view of overlay mark in the embodiment of the present invention 1;
Fig. 5 is the graph of a relation in the embodiment of the present invention 1 between +/-1 grade of light asymmetry and overlay error;
Fig. 6 is the process flow diagram of alignment measuring method in the embodiment of the present invention 1;
Fig. 7 is the structural representation of alignment measurement mechanism in the embodiment of the present invention 2.
In Fig. 1 ~ 6: 101-light source, 102-illumination path, 103-beam splitter, 104-object lens, 105-testing sample, 1051-first overlap triplet mark, 1052-second overlaps triplet mark, 106-spatial light modulator, 1061-transmission region, 1062-alternatively non-transparent region, 107-optical system, 108-spectrometer.
In Fig. 7: 203-beam splitter, 206-spatial light modulator, 209-detector.
Embodiment
For enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.It should be noted that, accompanying drawing of the present invention all adopts the form of simplification and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
Embodiment 1
Please refer to Fig. 1, the alignment measurement mechanism of the present embodiment, comprising:
Light source 101, for providing illuminating bundle, described light source 101 is broadband light source, adopt Xe lamp, halogen tungsten lamp and deuterium lamp etc., the light that light source 101 sends comprises visible ray, such as, comprise the light of 400nm ~ 800nm wavelength, infrared light, as the light of wavelength coverage 1000nm ~ 1500nm, and ultraviolet light, as wavelength is low to moderate the light of 200nm;
Object lens 104, for illuminating bundle is converged to testing sample 105, and collect the diffraction light on testing sample 105 surface, particularly: the light that light source 101 sends, after illumination path 102 and beam splitter 103, is converged on the overlay mark of testing sample 105 by object lens 104;
Spatial light modulator 106, is positioned at object lens 104 pupil plane, and pass through for the diffracted beam controlling different diffraction level secondary, further, described spatial light modulator 106 adopts iris or shutter.
Spectrometer 108, for measuring the diffraction light spectrum by spatial light modulator 106; Particularly, by the diffraction light of described spatial light modulator 106 through an optical system 107 laggard enter spectrometer 108, spectrometer 108 receives different diffraction lights, and record the spectrum of this diffraction light, when carrying out overlay error and measuring, for each overlay mark, need to measure its positive level time diffraction light and negative level time diffraction light respectively, then calculate the diffraction intensity asymmetry under different wave length, finally utilize the asymmetry that two overlay marks record, obtain overlay error.
The present embodiment adopts spectral measurement to substitute angular spectrum and measures, and detects diffraction light respective stages time light intensity.Because spectral measurement records the spectrum of electric light source and lighting ensemble average value, solve during angular spectrum is measured and be subject to the non-homogeneous sex problem of electric light source and lighting.Meanwhile, by usage space photomodulator 106, different diffraction level time diffraction light is measured and is separated in time; Adopt same spectrometer 108 to measure time diffraction light not at the same level, solve during angular spectrum is measured and use ccd detector different piece to measure different diffraction light, thus introduce the heteropical problem of detector pixel sensitivity.
Further, the present embodiment preferably adopts through mode spatial light modulator as shown in Figure 2, and described through mode photomodulator comprises transmission region 1061 and alternatively non-transparent region 1062; Particularly, when only measuring the spectrum of-1 grade of light ,-1 grade of light can be made to be in transmission region 1061, and 0 grade of light is in alternatively non-transparent region 1062 with+1 grade of light.When measuring the spectrum of+1 grade of light, this spatial light modulator 106 can be made to revolve turnback.
It should be noted that, adopt the scatterometry commercial measurement overlay error based on experience, need special overlay mark.The mark measured for diffraction light can be periodic intensive line markings, and this type of mark can make measuring equipment record the secondary diffraction efficiency of each order of diffraction relatively easily.The structure of the overlay mark that the present embodiment adopts as shown in Figure 3, in Fig. 3, Cu/FSG grating is underlying label, and the photoresist grating on surface is upper strata mark, is separated between two-layer mark by other process layers, then determine according to different production technologies needs in actual production and measurement, do not repeat herein.Namely position deviation between upper and lower two-layer grating marker is the overlay error produced by photoetching process.
Fig. 4 a and Fig. 4 b shows a kind of overlay mark measured for overlay error on testing sample 105, and it marks 1051,1052 by first, second cover triplet and forms, for measuring horizontal direction overlay error; Certainly, it also can be that the mark of vertical characteristics is for measuring vertical overlay error the design cycle.There is certain predetermined deviation-Δ and Δ between the upper and lower two-layer grating of 2 cover triplet marks 1051,1052, when upper and lower two-layer process interlayer exists overlay error, the position of mark as shown in Figure 4 b.Measure the positive and negative level time light diffraction efficiency asymmetry on 2 cover triplet marks 1051,1052 respectively, the present embodiment, for +/-1 grade of light diffraction efficiency asymmetry, obtains
A
1(ε-Δ)＝k·(ε-Δ)
............................(1)
A
2(ε+Δ)＝k·(ε+Δ)
Wherein, A
1be the asymmetry that first cover triplet mark 1051 records, A
2it is the asymmetry that second cover triplet mark 1052 records.So-called asymmetry refers to the diffraction efficiency difference that the corresponding order of diffraction is secondary, when incident light is normal incidence situation, is the difference of its +/-1 grade of light light intensity, namely
A＝I
+1-I
-1……………….(2)
Fig. 5 shows the situation that +/-1 grade of light asymmetry changes with overlay error, and wherein transverse axis is the ratio in overlay error and mark cycle.Visible, asymmetry is be approximated to proportional relation with overlay error near 0 at overlay error, and therefore, can calculate overlay error according to the asymmetry recorded is
Please refer to Fig. 6, and composition graphs 1 ~ 5, the present embodiment also provides a kind of alignment measuring method be applied in above-mentioned alignment measurement mechanism, comprising:
Step 1: open light source 101, moves to measuring hot spot on first cover triplet mark 1051 of testing sample 105.
Step 2: switch spatial light modulator 106, senior the diffraction light in a direction is passed through, stops senior diffraction light and the zero level time diffraction light in another direction simultaneously; That is, diffraction light now only has senior the diffraction light in first direction to pass through, namely only have the diffraction light of negative level time (or positive level time) by, senior the diffraction light in another direction and zero order light are then stopped, can not arrive spectrometer 108.It should be noted that, senior diffraction light in the present embodiment refers to other certain one-levels time diffraction light beyond zero order light, as +/-1 grade, +/-2 grades
Step 3: the spectrum of senior the diffraction light in an above-mentioned direction measured by spectrometer 108;
Step 4: switch spatial light modulator 106, senior the diffraction light in another direction is passed through;
Step 5: the spectrum of senior the diffraction light in another direction measured by spectrometer 108;
Step 6: measure hot spot and move on second cover triplet mark 1052 of testing sample 105, after repeating step 2 ~ 5, enter step 7;
Step 7: the asymmetry calculating senior diffraction light of first, second cover triplet mark 1051,1052, namely calculates the spectrum asymmetry of the positive and negative level of the correspondence time diffraction light that two cover triplet marks 1051,1052 record according to formula (2).
Step 8: utilize asymmetry to calculate overlay error value, namely utilizes asymmetry to calculate according to formula (3) and obtains overlay error value.
Embodiment 2
The distinctive points of the present embodiment and embodiment 1 is, the spatial light modulator selected is different.
Please refer to Fig. 7, in the present embodiment, use the selection that reflective spatial light modulator 206 realizes each order of diffraction time diffraction light.Particularly, described spatial light modulator 206 adopts digital micromirror array, can obtain spatial modulation mode and faster modulating speed more flexibly.
Continue referring to Fig. 7, the present embodiment uses a detector 209 to measure the another light beam separated from beam splitter 203, and further, this detector 209 is photodiode, for measuring the bulk strength change of incident light; Certainly, described photodiode also can replace with the second spectrometer, to measure the drift of incident light overall spectrum.All the other features of the present embodiment are identical with embodiment 1, repeat no more herein.
To sum up, the invention provides a kind of alignment measurement mechanism and method, for detecting overlay error, this device comprises: light source, for providing illuminating bundle; Object lens, for illuminating bundle is converged to testing sample, and collect the diffraction light on testing sample surface; Spatial light modulator, is positioned at objective lens pupil face, for controlling passing through of the secondary diffracted beam of different diffraction level; First spectrometer, for measuring the diffraction light spectrum by spatial light modulator.Compared with prior art, the present invention has the following advantages:
1, adopt spectral measurement to substitute angular spectrum to measure, diffraction light respective stages time light intensity is detected.Because spectral measurement records the spectrum of electric light source and lighting ensemble average value, solve during angular spectrum is measured and be subject to the non-homogeneous sex problem of electric light source and lighting;
2, by usage space photomodulator, different diffraction level time diffraction light is measured and is separated in time; Adopt same spectrometer to measure time diffraction light not at the same level, solve during angular spectrum is measured and use ccd detector different piece to measure different diffraction light, thus introduce the heteropical problem of detector pixel sensitivity;
3, the present invention is directed to and use the technical scheme of the corresponding order of diffraction time diffraction intensity asymmetry to be optimized, when making measurement different diffraction level time light intensity, precision is higher, consistance better, thus improves overlay error accuracy of detection.
Obviously, those skilled in the art can carry out various change and modification to invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (13)
1. an alignment measurement mechanism, for detecting overlay error, is characterized in that, comprising:
Light source, for providing illuminating bundle;
Object lens, for illuminating bundle is converged to testing sample, and collect the diffraction light on testing sample surface;
Spatial light modulator, is positioned at objective lens pupil face, for controlling passing through of the secondary diffracted beam of different diffraction level;
First spectrometer, for measuring the diffraction light spectrum by spatial light modulator.
2. alignment measurement mechanism as claimed in claim 1, is characterized in that, described light source adopts broadband light source.
3. alignment measurement mechanism as claimed in claim 2, it is characterized in that, described broadband light source comprises: Xe lamp, halogen tungsten lamp and deuterium lamp.
4. alignment measurement mechanism as claimed in claim 1, it is characterized in that, the illuminating bundle that described light source sends, by after illumination path and beam splitter, projects on object lens.
5. alignment measurement mechanism as claimed in claim 4, it is characterized in that, another beam projection after beam splitter is on a detector.
6. alignment measurement mechanism as claimed in claim 5, it is characterized in that, described detector is photodiode or the second spectrometer.
7. alignment measurement mechanism as claimed in claim 1, is characterized in that, described spatial light modulator adopts iris or shutter.
8. alignment measurement mechanism as claimed in claim 1, it is characterized in that, described spatial light modulator is through mode spatial light modulator, and described through mode photomodulator comprises transmission region and alternatively non-transparent region.
9. alignment measurement mechanism as claimed in claim 1, is characterized in that, enter the first spectrometer by the diffraction light of described spatial light modulator after an optical system.
10. alignment measurement mechanism as claimed in claim 1, it is characterized in that, described spatial light modulator is digital micromirror array.
11. 1 kinds of alignment measuring methods, are applied in the alignment measurement mechanism as described in any one of claim 1 ~ 10, it is characterized in that, comprising:
Step 1: open light source, moves on first cover triplet mark of testing sample by measuring hot spot;
Step 2: switch spatial light modulator, make senior the diffraction light in a direction pass through and be passed to the first spectrometer, stops senior diffraction light and the zero level time diffraction light in another direction simultaneously;
Step 3: the spectrum of senior the diffraction light in a first spectrometer measurement direction;
Step 4: switch spatial light modulator, make senior the diffraction light in another direction pass through and be passed to the first spectrometer;
Step 5: the spectrum of senior the diffraction light in first another direction of spectrometer measurement;
Step 6: measure hot spot and move on second cover triplet mark, repeat step 2 ~ 5;
Step 7: calculate the asymmetry that first, second cover triplet marks senior diffraction light;
Step 8: calculate overlay error value according to asymmetry.
12. alignment measuring methods as claimed in claim 11, is characterized in that, adopt formula A=I
+ 1-I
-1, calculate asymmetry;
Wherein, I
+ 1, I
-1when being respectively in incident light normal incidence to testing sample, the light intensity of +/-1 grade of light.
13. alignment measuring methods as claimed in claim 11, is characterized in that, adopt formula
calculate overlay error value,
Wherein, A
1be the asymmetry that first cover triplet mark records, A
2be the asymmetry that second cover triplet mark records, Δ is predetermined deviation.
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