CN104415464A - Dermatological treatment device, use of laser in treatment of dermatological diseases and disinfection method - Google Patents
Dermatological treatment device, use of laser in treatment of dermatological diseases and disinfection method Download PDFInfo
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- CN104415464A CN104415464A CN201310362519.XA CN201310362519A CN104415464A CN 104415464 A CN104415464 A CN 104415464A CN 201310362519 A CN201310362519 A CN 201310362519A CN 104415464 A CN104415464 A CN 104415464A
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- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004659 sterilization and disinfection Methods 0.000 title claims abstract description 17
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- 208000017520 skin disease Diseases 0.000 claims abstract description 59
- 206010012438 Dermatitis atopic Diseases 0.000 claims abstract description 21
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- 208000010668 atopic eczema Diseases 0.000 claims abstract description 19
- 208000002874 Acne Vulgaris Diseases 0.000 claims abstract description 18
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Abstract
The invention discloses a device for treating skin diseases, application of laser in treating skin diseases and a disinfection method, wherein the skin diseases comprise one or more of psoriasis, atopic dermatitis, eczema and acne vulgaris. The treatment device comprises at least one light source, wherein the light source emits laser with the wavelength of 400-410nm, and the device also comprises a path for enabling the laser to act on the skin with lesion. The dermatosis treatment device and the application of the laser in treating the dermatosis can quickly and effectively treat the dermatosis such as psoriasis, atopic dermatitis, eczema, acne vulgaris and the like by the laser with specific wavelength and performance, and does not bring other harm to patients.
Description
Technical field
The present invention relates to a kind for the treatment of for skin disease device, particularly relate to a kind of the treating skin disease device and the purposes of laser in treatment dermatosis that comprise light source, the invention still further relates to a kind of sterilization method.
Background technology
Skin infection and inflammation cause serious health & beauty problem.Especially the dermatosis such as psoriasis, atopic dermatitis, eczema, acne vulgaris brings serious puzzlement and misery to patient especially.These dermatosiss are difficult to radical cure, recurrent exerbation, are the generally acknowledged stubborn diseases being difficult to effect a radical cure.Existing traditional therapy is as medicinal preparation for oral administration, and the methods such as daubing medicament are difficult to the above-mentioned dermatosis of radical cure or obtain reasonable therapeutic effect.
Light radiation employs many years in hospital and non-medical equipment, is used for treating the dermatological problems of various medical science and beauty treatment.But adopt light radiation must consider the potential heat injury of patient or other injuries, and the safety etc. to eyes, and want effectively to treat dermatosis.But at present conventional light radiation treatment can not the dermatosis that caused by antibacterial, fungus or virus of short time internal therapy effectively, typically have the dermatosiss such as psoriasis, atopic dermatitis, eczema, acne vulgaris, finding a kind of dermopathic means such as psoriasis, atopic dermatitis, eczema, acne vulgaris of effectively treating is the problem needing to solve.
Summary of the invention
The object of the invention is to propose a kind for the treatment of for skin disease device and the purposes of laser in treatment dermatosis, fast and safely effectively can treat the dermatosis that caused by antibacterial, fungus or virus as dermatosiss such as psoriasis, atopic dermatitis, eczema, acne vulgariss, not bring other to endanger to patient.And the present invention also provides a kind of sterilization method, can fast and effeciently kill the harmful substances such as antibacterial, fungus, virus, easily and effectively.
For reaching this object, the present invention by the following technical solutions:
A kind for the treatment of for skin disease device, this device comprises at least one light source, and this light source sends the laser that wavelength is 400-410nm, and this device also comprises the path of the skin generation effect making described laser to generation pathological changes.
Wherein, the wavelength of described laser is 405nm.
Wherein, described dermatosis is caused by any one in antibacterial, fungus, virus or its combination.
Wherein, described dermatosis is one or more in psoriasis, atopic dermatitis, eczema, acne vulgaris.
Wherein, described light source is semiconductor laser.
Wherein, described semiconductor laser also comprises key switch and safety interlock.
Wherein, this therapy equipment also comprises optical transport and navigation system, and described ray optics to the skin surface that will treat, and navigates in the focus that will treat by the light transmission that described light source sends by this optical transport and navigation system.
The present invention also provides the purposes of a kind of laser in treatment dermatosis, it is characterized in that, the laser of described laser to be wavelength be 400-410nm, described Laser Transmission on the skin that pathological changes occurs, to the skin generation effect that pathological changes occurs.
Wherein, the wavelength of described laser is 405nm.
Wherein, described dermatosis is caused by any one in antibacterial, fungus, virus or its combination.
Wherein, described dermatosis is one or more in psoriasis, atopic dermatitis, eczema, acne vulgaris.
Wherein, the light source of described laser is semiconductor laser.
Wherein, described semiconductor laser also comprises key switch and safety interlock.
Wherein, described laser transports light to the skin surface that will treat by optical transport and navigation system, and is navigated to by described ray optics in the focus that will treat, to the skin generation effect that pathological changes occurs.
Present invention also offers a kind of sterilization method, it is characterized in that adopting wavelength to be the surface that the laser of 400-410nm irradiates region to be sterilized, remove any one in antibacterial, fungus, virus or its combination.
Wherein, the wavelength of described laser is 405nm.
Wherein, described laser sent by semiconductor laser.
Wherein, the dosage of described laser is 30J/cm
2above.
The treating for skin disease device that the present invention proposes and the purposes of laser in treatment dermatosis, can fast and effeciently treat the dermatosis that caused by antibacterial, fungus or virus as dermatosiss such as psoriasis, atopic dermatitis, eczema, acne vulgariss with the laser of specific wavelength, and not bring other to endanger to patient.The sterilization method energy effective and safe that the present invention proposes kills antibacterial, fungus or virus fast.
Accompanying drawing explanation
Fig. 1 illustrates the wave-length coverage contrast of the light that light emitting diode and laser instrument send.
Fig. 2-Fig. 5 is the various versions for the treatment of skin disease device in embodiment one.
Under Fig. 6 shows the irradiation of light and the laser sent at light emitting diode, the time dependent situation of colibacillary quantity.
Fig. 7 shows the time dependent situation of energy density of light that light emitting diode sends and laser.
Wherein, Reference numeral is expressed as follows:
1, light source; A, ultraviolet region; The wave-length coverage of the light that B, laser instrument send; The wave-length coverage curve of the light that C, light emitting diode send; When 3, adopting the laser of the 400-410nm of 150mW to irradiate surface to be sterilized, escherichia coli quantity is with the change curve of irradiation time; When 4, adopting the LED illumination of 99W surface to be sterilized, escherichia coli quantity is with the change curve of irradiation time; 5, the cumlative energy density of the laser of the 400-410nm of 150mW over time; 6, the time dependent situation of cumlative energy density of the LED array of 99W.
Detailed description of the invention
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not entire infrastructure.
Embodiment one:
The treating for skin disease device that the present embodiment provides is mainly used in combining by any one in antibacterial, fungus, virus or its dermatosis caused, and typically has the dermatosiss such as psoriasis, atopic dermatitis, eczema, acne vulgaris.This therapy equipment comprises light source, this light source is semiconductor laser, and send the laser that wavelength is 400-410nm, described semiconductor laser is preferably nitride semi-conductor laser, the laser that wave-length coverage is extremely narrow can be sent, the laser that wavelength is 405nm can be sent in preferred mode.The advantage adopting semiconductor laser is that semiconductor laser volume is little, lightweight, luminous efficiency is high, be suitable for the use of armarium, the type adopting semiconductor laser can be the semiconductor laser without condenser lens, also can adopt the semiconductor laser of other types.Also non-semiconductor laser instrument can be adopted as non-lens laser device, CW laser instrument, pulsed IR laser etc. simultaneously.
This therapy equipment also comprises the path of described laser to the skin generation effect of generation pathological changes, specifically, comprise optical transport and navigation system, the laser that light source sends by optical transport and Oriented Systems Transport to skin surface, and described light is navigated in the focus that will treat, have an effect with the skin that pathological changes occurs, deactivation skin surface and subcutaneous antibacterial, fungus and virus etc. bring out the biological tissue with skin infection disease, suppress the regeneration of these biological tissues.
Dermatosis is generally caused by antibacterial, fungus or virus.
By bacterial skin infection primarily of erythra, seat skin ulcer etc., the antibacterial of skin infection is caused to mainly contain staphylococcus.Wavelength is 400-410nm, and the laser being preferably 405nm has higher energy density, is greater than 30J/cm at radiation dose (energy density)
2when effectively can remove antibacterial, treat by these bacterial dermatosiss thus, for staphylococcus aureus (MRSA), dosage is 45J/cm
2laser MRSA effectively can be removed.
The main fungal kind of cutaneous fungal infection can be caused to have: tinea (dermatophytes, tinea), comprise the yeast (yeasts) and mycete (moulds) etc. of candidiasis (candida), Malassezia (malassezia), trichosporon bacteria (piedra).Similarly, wavelength is 400-410nm, and the laser being preferably 405nm has higher energy density, is greater than 30J/cm at radiation dose
2when can effectively remove these funguses, treat thus by these fungus-caused dermatosiss.
Have some dermatosiss to be acted on by antibacterial or fungus and virus causing, these treating skin diseases get up more difficult, and experiment finds, wavelength is the laser of 405nm, reaches 30J/cm at the irradiation dose of laser simultaneously
2antibacterial or fungus and virus can be removed by when effectively simultaneously, reach and effectively treat dermopathic effect.This wherein more typical dermatosis have psoriasis, atopic dermatitis, eczema, acne vulgaris etc.
Psoriasis is a kind of chronic disease, involves crowd comparatively wide, and its life impact caused patient is very large.Pruritus, squama and visible speckle are the subject matter of puzzlement patient, lack the method for long-term radical cure at present.Atopic dermatitis (atopic dermatitis, AD) is a kind of chronic, recurrent inflammatory dermatoses, and main manifestations is that violent pruritus, significantly eczema sample becomes and xerosis cutis.Eczema (eczema) be by the inside and outside factor of Various Complex cause a kind of there is pleomorphism skin lesion and easily have ooze out tendency dermal inflammatory react.Acne vulgaris (acne vulgaris) is the common chronic pilosebaceous inflammations disease of one of adolescence, is apt to occur in face, often with seborrhea.
Several dermopathic feature is and is difficult to long-term radical cure above, brings puzzlement greatly and misery to patient, and inventor finds to adopt wavelength to be the laser of 400-410nm, and the laser being preferably 405nm is greater than 30J/cm at radiation dose
2when can fast, safety, effectively treat psoriasis, atopic dermatitis, eczema, acne vulgaris etc., remove the misery of patient.
Laser can be had an effect with the skin that pathological changes occurs, and within very short time, deactivation skin surface and subcutaneous antibacterial, fungus and virus etc. bring out the biological tissue with skin infection disease, suppress the regeneration of these biological tissues.And the energy density of laser is high can concentrate on point accurately by light, promptly antibacterial, fungus, virus etc. are killed.Such as irradiation dose is at 30J/cm
2in the above laser short time, above-mentioned antibacterial, fungus or virus are killed, reach the dermopathic problem for the treatment of and being caused by antibacterial, fungus or virus.
Compared with common light source, it is minimum that laser has beam divergence, and brightness is high, and spectral distribution is narrow, and monochromaticity is good, the great feature of energy density.Especially in treatment dermatosis, kill antibacterial, fungus, virus efficacy are high, speed is fast.Such as, the light that the laser instrument of 405nm sends, its spectral distribution is within ± 2.5nm, and the optical range that is sent is between 402.5nm to 407.5nm, and peak value is 405nm.And relative to the laser that laser instrument sends, the light that light emitting diode sends, its spectral distribution is at ± 15nm, that is the light emitting diode of 405nm, the optical wavelength range sent is between 390nm to 420nm, and the light of wave-length coverage between 390-420nm comprises harmful ultraviolet.
Fig. 1 illustrates the wave-length coverage contrast of the light that light emitting diode and laser instrument send.A represents ultraviolet region in FIG, and B represents the wave-length coverage of the light that laser instrument sends, and C represents the wave-length coverage of the light that light emitting diode sends.As seen from Figure 1, the spectral distribution of laser is narrow, and as mentioned above, the light that 405nm laser instrument sends, its wave-length coverage major part concentrates on 405nm.And for light emitting diode, the scope of its luminescence compares dispersion, that is the light that sends of light emitting diode, the light of wave-length coverage between 390nm to 420nm can only be obtained, this which includes harmful ultraviolet, as shown in part A in Fig. 1, there is certain common factor in the optical wavelength range that the light emitting diode that part A and C curve represent sends, if need the light using light emitting diode to send to carry out treating for skin disease, then need to adopt filter plate to remove this part common factor i.e. harmful ultraviolet light, and the light energy that light emitting diode sends dispersion is not concentrated.
Meanwhile, the light intensity of laser is high, and the time reaching same radiation dose needs is short.For example, if needing area is 9.8cm
2region treat, the radiation dose of needs is 45J/cm
2, then the energy needed is 45 × 9.8=441J.100W(is equivalent to the light intensity of 5W) light emitting diode (LED), the light sent has 68% can be effective, what after filtering, reach human body again only has 20%, then the time that will reach the energy demand of 441J is 441/ (5 × 0.68 × 20%)=648s.100W(is equivalent to the light intensity of 5W, the laser instrument of 25 200mW can be adopted to realize) laser, the light 99% sent can be effective, then the time that will reach the energy demand of 441J is 441/ (5 × 0.99)=89s.That is, needing under same radiation dose, the time that laser needs is only about 1/8.Shorter exposure time can reduce the infringement of light to other position of human body, and makes the comfort level that patient feels higher.
On the other hand, wavelength is the laser of 400-410nm, has special curative effect to dermatosiss such as above-mentioned psoriasis, atopic dermatitis, eczema, acne vulgariss.Because described laser energy density is very big, the dermopathic biological tissue of the above-mentioned initiation of deactivation effectively, thoroughly, solves epidermis cell abnormality proliferation and Parakeratotic problem, makes skin recover normal.And be preferably the better effects if of laser therapy of 405nm, to the removal of the dermopathic biological tissue of above-mentioned initiation with suppress regeneration stronger.
Fig. 2-Fig. 5 is the various versions of therapy equipment in the present embodiment, and Fig. 2 has two light sources 1 in therapy equipment, carry out irradiation from front and back to the whole body of human body, and this therapeutic modality is suitable for treating the larger situation of the skin area of pathological changes.Fig. 3 comprises a light source 1, and from just in the face of the whole body of human body carries out irradiation, also comprise a light source 1 in Fig. 4, carry out irradiation to the local of human body, Fig. 5 is portable therapy equipment, easy to carryly can carry out irradiation to human body whenever and wherever possible.Be more than 4 kinds of forms of therapy equipment in the present embodiment, therapy equipment can also have other forms of change, and these all fall within the scope that the present invention will protect.
In a preferred embodiment, in described therapy equipment, semiconductor laser also comprises key switch and safety interlock, avoids laser to the infringement of human body.
Dermopathic method and the purposes of laser in treatment dermatosis are treated in the therapy equipment that following description adopts the present embodiment to provide, the skin that pathological changes occurs is exposed in above-mentioned therapy equipment, the wavelength that semiconductor laser sends is the laser of 400-410nm, be preferably the direct irradiated skin surface of laser of 405nm, have an effect with the skin that pathological changes occurs, be greater than 30J/cm at radiation dose
2when bring out the biological tissue with skin infection disease with very short time deactivation skin surface and subcutaneous antibacterial, fungus and virus etc., suppress the regeneration of these biological tissues.To dermatosiss such as psoriasis, atopic dermatitis, eczema, acne vulgariss, there is special curative effect.
Laser can adopt whole body irradiation, and the mode of local irradiation acts on the skin that pathological changes occurs, and these are all within the scope of protection of present invention.
In preferred mode, the skin that pathological changes occurs is exposed under the direct radiation of the laser of 405nm, better effect can be obtained, bring out with the deactivation of the biological tissue of skin infection disease more thorough for skin surface and subcutaneous antibacterial, fungus and virus etc., the suppression regeneration for these tissues is stronger.
Embodiment two:
The present embodiment provides a kind of sterilization method, can remove except any one in antibacterial, fungus, virus or its combination.
The sterilization method that the present embodiment provides adopts wavelength to be the laser of 400-410nm, and optimal wavelength is the surface in the laser irradiation region to be sterilized of 405nm, under certain irradiation dose, is preferably being greater than 30J/cm
2irradiation dose under carry out irradiation, the time of irradiation can be selected as required.Such as when power is 0.45W, the time of irradiation 0.05-0.1 second just can kill antibacterial, fungus or virus.The sterilization method required time that this enforcement provides is short, efficiency height is very effective sterilization method.
Compared with common light source such as light emitting diode, LASER Light Source can in a short period of time by eliminations such as antibacterial, fungus or viruses, after Fig. 6 shows and adopts the wavelength that sends of light emitting diode to be the light of 400nm and wavelength to be the laser of 400-410nm to irradiate surperficial certain hour to be sterilized, the situation of change of escherichia coli quantity.In figure 6, when curve 3 represents that the laser of the 400-410nm of employing 150mW irradiates surface to be sterilized, escherichia coli quantity is with the situation of change of irradiation time, and curve 4 represents that when adopting the LED illumination of 99W surface to be sterilized, escherichia coli quantity is with the situation of change of irradiation time.
As seen from Figure 6, when adopting laser to irradiate, in the irradiation time of about 15s, escherichia coli are from initial 10
5.2cFU/ML significantly drops to 10
2.2cFU/ML, and for LED same by escherichia coli from 10
5.2cFU/ML drops to 10
2.2cFU/ML then needs the time of 293s.Therefore can determine, laser can reduce the quantity of antibacterial significantly within very short time, and disinfection efficiency is much larger than light emitting diode.
Compared with common light source, owing to having, beam divergence is minimum can arrive required irradiation dose with feature that is concentration of energy to laser in a short period of time.Fig. 7 shows light that wavelength that light emitting diode sends is 400nm and the laser that wavelength is 400-410nm and reaches time needed for certain cumlative energy density (dosage).Straight line 5 represents the cumlative energy density situation over time of the laser of the 400-410nm of 150mW.In the figure 7, straight line 6 represents the time dependent situation of cumlative energy density of the LED array of 99W.
As seen from Figure 7, for laser, in the irradiation time of about 15s, it is 180J/cm that the laser of the 400-410nm of 150mW can reach cumlative energy density
2, and for the LED of 99W, only reach 110J in cumlative energy density after about 172s.That is laser can reach required irradiation dose in a short period of time, thus effectively kills antibacterial, fungus or virus rapidly, plays the effect of sterilization.
The light source of described laser preferably adopts semiconductor laser, and its advantage is that semiconductor laser volume is little, lightweight, luminous efficiency is high, is suitable for the use of sterilizing equipment decontaminating apparatus, also can adopts the laser instrument of other types.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (18)
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| JP2018027291A (en) * | 2016-08-10 | 2018-02-22 | パナソニックＩｐマネジメント株式会社 | Antibacterial method and antibacterial device |
| CN108310478A (en) * | 2018-02-05 | 2018-07-24 | 倪菁菁 | A kind of bacterium infection type scytitis rehabilitation nursing instrument |
| CN109011193A (en) * | 2018-08-25 | 2018-12-18 | 武汉高科恒大光电有限公司 | A kind of laser therapeutic apparantus energy regulating system and method |
| WO2023102756A1 (en) * | 2021-12-08 | 2023-06-15 | Gauss Lasers Tech (Shanghai) Co., Ltd. | Systems and methods for fluid or structure surface disinfection using deep uv picosecond laser |
| CN117717718A (en) * | 2024-01-31 | 2024-03-19 | 中国人民解放军空军特色医学中心 | Multi-wavelength laser treatment device for onychomycosis caused by trichophyton rubrum and use method thereof |
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| CN108310478B (en) * | 2018-02-05 | 2020-08-18 | 莱芜职业技术学院 | Bacterial infection type dermatitis rehabilitation and nursing instrument |
| CN109011193A (en) * | 2018-08-25 | 2018-12-18 | 武汉高科恒大光电有限公司 | A kind of laser therapeutic apparantus energy regulating system and method |
| WO2023102756A1 (en) * | 2021-12-08 | 2023-06-15 | Gauss Lasers Tech (Shanghai) Co., Ltd. | Systems and methods for fluid or structure surface disinfection using deep uv picosecond laser |
| CN117693368A (en) * | 2021-12-08 | 2024-03-12 | 国神光电科技（上海）有限公司 | Systems and methods for fluid or structural surface disinfection using deep ultraviolet picosecond lasers |
| CN117717718A (en) * | 2024-01-31 | 2024-03-19 | 中国人民解放军空军特色医学中心 | Multi-wavelength laser treatment device for onychomycosis caused by trichophyton rubrum and use method thereof |
| CN117717718B (en) * | 2024-01-31 | 2024-04-16 | 中国人民解放军空军特色医学中心 | Multi-wavelength laser treatment device for onychomycosis caused by trichophyton rubrum and use method thereof |
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