CN104409325B - Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit - Google Patents
Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit Download PDFInfo
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- CN104409325B CN104409325B CN201410657088.4A CN201410657088A CN104409325B CN 104409325 B CN104409325 B CN 104409325B CN 201410657088 A CN201410657088 A CN 201410657088A CN 104409325 B CN104409325 B CN 104409325B
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- aluminum
- integrated circuit
- evaporation
- aluminium
- coating process
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 95
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000001704 evaporation Methods 0.000 title claims abstract description 29
- 238000000576 coating method Methods 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 5
- 239000004411 aluminium Substances 0.000 claims description 38
- 230000008020 evaporation Effects 0.000 claims description 25
- 230000008569 process Effects 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 229910000906 Bronze Inorganic materials 0.000 claims description 2
- 239000010974 bronze Substances 0.000 claims description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 34
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000002253 acid Substances 0.000 description 5
- 238000003475 lamination Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000010025 steaming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02697—Forming conducting materials on a substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
Abstract
The invention discloses a method for reducing an aluminum bar gap in the thick aluminum evaporating coating process of an integrated circuit. The method is that alloy aluminum is used as an evaporating source material. The method for reducing the aluminum bar gap in the thick aluminum evaporating coating process of the integrated circuit has the advantages that the phenomenon of holes in an aluminum layer after coating of the thick aluminum (aluminum film exceeding 2.5 microns in thickness) in the prior art can be effectively reduced, and thus the problem of aluminum bar gap caused by subsequent wet etching can be solved; and the method is simple and easy to be conducted, and is worthy of popularization and application.
Description
Technical field
The invention belongs to production of integrated circuits field, and in particular to one kind improves integrated circuit thickness aluminum evaporation coating process aluminum
The method of bar breach.
Background technology
In the manufacture process of integrated circuit, aluminum easily forms low-resistance Europe due to good electric conductivity with silicon materials
Nurse is contacted, and the adhesiveness good with silicon and silicon dioxide, is widely used in metal contact, interconnection material.With quasiconductor
Device products species is enriched constantly, and the requirement to aluminium film is also higher.For high-voltage power pipe, its running voltage is more
It is high.Electric current is big, can cause in unit area aluminium film that electric current density is too high, easily burns, therefore to improve the thickness of aluminium film.
The method of the metal coating of integrated circuit is a lot, and electron beam evaporation is one of most common method.Electron beam evaporation
The electron beam for being accelerated using Jing high pressure and being focused on is allowed to evaporate and be deposited on silicon chip surface come heating evaporation source, forms thin film.But
Aluminium film thickness is thicker, and the pore that aluminium lamination surface is formed is more, intuitively shows as reflectance low.By HITACHI S-
4300 scanning electron microscopes observe aluminium film surface, and the particle contaminant of these pores not class of impurity one is in aluminium film surface shape
Into, but the cavity of generation of the aluminum molecule in crystallization（See Fig. 1）.The little hundreds of nanometer of these empty sizes, big can
Reach 2 μm.In subsequent wet-etching technology, acid solution is invaded in cavity, and after aluminum is by acid liquid corrosion, cavity expands, finally
Form different degrees of breach（See Fig. 2）.
Cavity is related to the crystallization process of the crystal grain in evaporation process.In film forming, crystal grain is moved if enough energy
Move, rearrange on the surface, aluminium film stress is little, and the aluminium film of formation is more smooth（Without cavity）；Conversely, then aluminium film stress is got over
Greatly, the aluminium film out-of-flatness of formation（There is cavity）.If aluminium film thickness increases, the stress of film forming is bigger, and cavity is also bigger.In tradition
In technique, using fine aluminium as evaporation source material.If thickness≤the 1.5um of aluminium film, aluminium film cavity is not substantially, rotten through wet method
Without obvious breach on aluminum strip after erosion.But thickness is reached after 2.5um, cavity is big to can reach 2 μm, in wet etching, acid
Liquid corrodes aluminium lamination from cavity, forms obvious breach.
From for evaporation technology itself, substrate baking temperature, make piece vacuum, evaporation deposition rate and all have influence on aluminium film
Quality.（1）Substrate baking temperature：The baking temperature of substrate is improved, atomic mobility of the aluminium atom in substrate surface can be improved, made
The horizontal kinetic energy of film surface is larger, the aluminium grain of formation is larger, and more closely, intercrystalline space is less for arrangement.Temperature is high, aluminum
The energy of atom is big, and the aluminium film of formation is more preferable with the adhesive force of beneath substrate.But board temperature is improved, board may be damaged cold
The exhaust capacity of pump, makes to make piece vacuum variation, causes have cavity during film forming again.Therefore temperature should be taken at suitable value, not
It is that the higher the better.（2）Cavity makees piece vacuum：Make piece vacuum less, it is possible to reduce gas attachment and reduction aluminum during film forming
Motion of the atom in evaporation hinders, and the aluminium film structure of formation can be finer and close, advantageously reduces the generation in cavity.It is true in theory
Empty the smaller the better, the exhaust capacity that board vacuum capability mainly takes out pump by equipment height is determined.（3）Evaporation deposition rate is bigger,
Produced when crystal grain the is condensed into heat of aluminium atom is more, is conducive to improving atomic migration of the aluminium atom in substrate surface
Rate, forms compact texture, improves cavity.Higher evaporation rate is obtained, board power is typically improved, board is which increased
The risk of sparking, the power of evaporation is generally in 20 ~ 25A/S.In practice, only by the parameter of adjustment evaporation board, it is difficult to
It is effectively improved the empty problem of thick aluminum evaporation.
The content of the invention
It is an object of the invention to provide a kind of method for improving integrated circuit thickness aluminum evaporation coating process aluminum strip breach, can
Effectively to improve traditional thick aluminum（Aluminium film thickness is more than 2.5 μm）Aluminium lamination cavitation after plated film, so as to road wet method after solving
The aluminum strip gap problem occurred after etching.The method is simple, is conducive to popularization and application.
For achieving the above object, the present invention is adopted the following technical scheme that：
A kind of method for improving integrated circuit thickness aluminum evaporation coating process aluminum strip breach：Using alloy aluminum as evaporation source material
Material.
The component percentage of described alloy aluminum：99.5% aluminum and 0.5% bronze medal.
The present invention remarkable advantage be：Using aluminum copper alloy material as evaporation source material, aluminium lamination surface can be improved
Cavity, optimizes the form of aluminium film surface.The fusing point of aluminium copper is lower than fine aluminium, therefore changes into solid-state from gaseous state in crystal grain
During, material has higher mobility, it is possible to reduce the formation in cavity.The present invention can effectively improve traditional thick aluminum（Aluminum
Film thickness is more than 2.5 μm）Aluminium lamination cavitation after plated film, so as to the aluminum strip breach occurred after road wet etching after solving is asked
Topic.The method is simple, is conducive to popularization and application.
Description of the drawings
Fig. 1 is the cavity that aluminum is produced in crystallization in traditional handicraft.
Fig. 2 is that different degrees of breach is formed in wet-etching technology.
Fig. 3 is the aluminium film surface of present invention process.
Fig. 4 is the metal surface of present invention process.
Fig. 5 completes front road fairlead etching technics.
Fig. 6 deposits 2.5 μm of metal level.
Fig. 7 is lithographically formed required figure, used as etching shielding.
Fig. 8 wet etchings, remove the metal level without glue shielding.
Fig. 9 removes photoresist, forms metal connecting line.
Medium I is medium under metal level（Generally oxide layer or silicon nitride）, medium II is metal level；Medium III is light
Photoresist screens layer.A is traditional fine aluminium technique, and B is present invention process.
Specific embodiment
In order to the present invention is expanded on further, by traditional fine aluminium technique, the aluminium alloy process ration of the present invention, with reference to accompanying drawing
Illustrate the improvement to thick aluminum breach using the aluminium alloy technique after optimization.Comprise the following steps that：
Step one, the technique for completing front road fairlead etching.
Explanation：Dielectric layer I in medium under metal level, generally oxide layer or silicon nitride, such as accompanying drawing.
The metal level of step 2, deposit 2.5um.
More practically to illustrate the specific embodiment and effect of the present invention, from the MARK of CHA Industries companies
50 evaporators are as experiment board.Board adopt typical parameter setting, chamber vacuum 1.0E-6Torr, 130 DEG C of substrate temperature,
Evaporation rate 20A/S is as follows：
A, using traditional evaporation of aluminum technique, with the fine aluminium of purity 99.9995% as evaporation source material, steam 2.5 μ m thicks
Aluminum, the aluminium film for obtaining observes aluminium film surface by HITACHI S-4300 scanning electron microscopes, and there is a cavity on surface, size from
855nm to 2.05 μm（Such as Fig. 1）.
B, present invention process is adopted, 0.5% copper is added in fine aluminium, steam the aluminum of 2.5 μ m thicks, the aluminium film for obtaining passes through
HITACHI S-4300 scanning electron microscopes observe aluminium film surface, sample crystallite dimension about in 217 ~ 738nm, surfacing,
Without cavity generation（Such as Fig. 3）.
Step 3, it is lithographically formed required figure.
Explanation：, in wet etching, the aluminum under shielding is not by wet method acid liquid corrosion for litho pattern.
Step 4, wet etching.
Explanation：Wet etching is the metal level that unglazed photoresist shielding is fallen in corruption, in traditional handicraft, because there is cavity, and acid
Liquid can be invaded in cavity, cavity expansion, such as in accompanying drawing（Fig. 8 A）In dotted portion, define breach.
Step 5, removal photoresist, form metal connecting line.
Using traditional evaporation of aluminum technique, there is obvious breach on the final metal connecting line surface for obtaining, such as（Fig. 2）.Using this
Bright technique, the final metal connecting line surfacing for obtaining, non-notch, such as（Fig. 4）.
The present invention is that the aluminium film surface to be formed is smooth than the advantage of traditional technique, intact after wet etching without cavity
Mouthful.In the narrower technique of the aluminum strip live width of integrated circuit, breach sometimes results in aluminum strip broken strip, it is impossible to form metal interconnection,
Cause product failure.And in the relatively wide technique of aluminum strip live width, although breach results only in aluminum strip and has lacked an osculum, but product
Be powered when this at electric current density it is higher compared with other regions, easily burn herein, shorten the life-span of product.Therefore, aluminum strip lacks
Mouth not only affects the apparent of aluminum strip, also compromises the function of product.The thicker cavitation of aluminium film is more obvious, and the present invention is not only to steaming
There is improvement in the cavity of the μ m thick of aluminum plated film 2.5, and at thicker 3.0 μm, or even in 4.5 μm of technique, the advantage of the present invention is more
Substantially, the integrated road demand increasingly thicker to aluminum layer thickness is met.
The foregoing is only presently preferred embodiments of the present invention, all impartial changes done according to scope of the present invention patent with
Modification, should all belong to the covering scope of the present invention.
Claims (1)
1. a kind of method for improving integrated circuit thickness aluminum evaporation coating process aluminum strip breach, it is characterised in that：Made using alloy aluminum
For evaporation source material, the aluminium film that thickness is 2.5 μm is evaporated, control the technological parameter in evaporation process：Chamber vacuum 1.0E-6
Torr, 130 DEG C of substrate temperature, 20/S of evaporation rate；The component percentage of described alloy aluminum：99.5% aluminum and
0.5% bronze medal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410657088.4A CN104409325B (en) | 2014-11-17 | 2014-11-17 | Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410657088.4A CN104409325B (en) | 2014-11-17 | 2014-11-17 | Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104409325A CN104409325A (en) | 2015-03-11 |
| CN104409325B true CN104409325B (en) | 2017-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410657088.4A Active CN104409325B (en) | 2014-11-17 | 2014-11-17 | Method for reducing aluminum bar gap in thick aluminum evaporating coating process of integrated circuit |
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| Country | Link |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068681A (en) * | 1991-06-27 | 1993-02-03 | 三星电子株式会社 | Method for manufacturing semiconductor device |
| US6017816A (en) * | 1997-02-25 | 2000-01-25 | Mosel Vitelic Inc. | Method of fabricating A1N anti-reflection coating on metal layer |
-
2014
- 2014-11-17 CN CN201410657088.4A patent/CN104409325B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1068681A (en) * | 1991-06-27 | 1993-02-03 | 三星电子株式会社 | Method for manufacturing semiconductor device |
| US6017816A (en) * | 1997-02-25 | 2000-01-25 | Mosel Vitelic Inc. | Method of fabricating A1N anti-reflection coating on metal layer |
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| Publication number | Publication date |
|---|---|
| CN104409325A (en) | 2015-03-11 |
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