CN104407035A - Gas sensor chip - Google Patents
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- CN104407035A CN104407035A CN201410644792.6A CN201410644792A CN104407035A CN 104407035 A CN104407035 A CN 104407035A CN 201410644792 A CN201410644792 A CN 201410644792A CN 104407035 A CN104407035 A CN 104407035A
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- 239000000758 substrate Substances 0.000 claims abstract description 89
- 238000010438 heat treatment Methods 0.000 claims abstract description 22
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical group O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 32
- 238000003475 lamination Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 206010070834 Sensitisation Diseases 0.000 claims description 6
- 230000008313 sensitization Effects 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 238000003795 desorption Methods 0.000 claims description 4
- 229920006254 polymer film Polymers 0.000 claims description 4
- 238000001179 sorption measurement Methods 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 74
- 239000012528 membrane Substances 0.000 abstract description 7
- 230000004044 response Effects 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000010030 laminating Methods 0.000 abstract 1
- 229920005597 polymer membrane Polymers 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 58
- 239000010408 film Substances 0.000 description 32
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
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- 238000007084 catalytic combustion reaction Methods 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000004080 punching Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000498 ball milling Methods 0.000 description 2
- 238000005266 casting Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004902 Softening Agent Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
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- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- -1 magnesium aluminate Chemical class 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
A disclosed gas sensor chip is formed by laminating a first-layer, a second-layer, a third-layer and a fourth-layer piezoelectric substrates; a reference gas channel is arranged on the first-layer piezoelectric substrate; a reference electrode is arranged between the first-layer and the second-layer piezoelectric substrates, and is communicated with the reference gas channel; a heating electrode is arranged between the second-layer and the third-layer piezoelectric substrates; the second-layer piezoelectric substrate is coated with a gas-sensitive membrane, and the gas-sensitive membrane is a polymer membrane with performances of adsorbing and desorbing corresponding gases; and the fourth-layer piezoelectric substrates is provided with a gold-membrane interdigital figure and a film forming zone. The gas sensor chip has the characteristics of high sensitivity, fast response, good selectivity, simple structure, long service life and the like, can be designed aiming at any gases, and makes up the disadvantages that performances of a conventional gas sensor cannot be completely considered.
Description
Technical field
The invention belongs to the technical field of sensor chip, in particular to a kind of gas sensor chip.
Background technology
Along with the raising day by day of automobile emission regulation, require also more and more higher to exhaust gas measuring, the cold start-up time that demand of auto engine is shorter for this reason meets the demands.Consider the needs of energy saving simultaneously, the chip oxygen sensor that a kind of integrated level is high, volume is little, consumed power is little, toggle speed is fast becomes a kind of trend, to enter the requirement of closed-loop control after meeting engine electric spray system cold start-up as far as possible fast, reduce the power consumption of lambda sensor simultaneously.
Current existing sheet type sensor structure is primarily of 3 layers of zirconia substrate and some function thick-film layers composition, and zirconia substrate is mainly through curtain coating or to roll the method for film shaping, and thick film functional layer obtains mainly through screen printing technique.The potential electrode of lambda sensor and contrast electrode are formed on the surfaces externally and internally of substrate respectively, the middle part of substrate are washed open one long and narrow openning, to form reference air duct by impact briquetting; And the platinum disposition of heating component of being wrapped up by ceramic insulating layer is on the inside surface of bottom substrate, also to make a call to two through holes at the end of substrate the heating electrode sheet of the heating element of inside surface with outside surface end is coupled together, constitute sensitive element and the integrated chip oxygen sensor structure of heating element.But this structural thickness is thick, volume is large, production process is complicated, and heating element is planted in sensor internal with parcel form, and stability is poor, and easily leaks electricity.
Gas sensor is a kind of converter certain gas volume fraction being changed into corresponding electric signal, current existing gas sensor is of a great variety, by gas sensitive used and gas-sensitive property difference thereof, semiconductor-type, solid electrolyte formula, electric chemical formula, catalytic combustion type etc. can be divided into.
1, semiconductor gas sensor
This sensor accounts for 60% in gas sensor.Resistance-type and non-resistor two kinds can be divided into according to its mechanism.Resistance-type adopts the preparation of the metal oxide materials such as SnO2, ZnO, have porous sintered, thick film, the form such as film.Mainly fixed by the situation of change of the electrical resistance gas content of detection gas sensor, main use metal oxide ceramic gas sensitive.Non-resistor semiconductor gas sensor utilizes the electric current of gas sensor and voltage change with gas content and work.
2, solid-state electrolyte gas sensor
This sensor element is the conduction of ion pair solid electrolyte diaphragm.Its mechanism is the electromotive force utilizing the potential difference (PD) between the battery of two, barrier film both sides to equal concentration cell.Measure gas concentrations is carried out, as the YST-Au-WO3 of H2S can be measured, measure the NH+4CaCO3 etc. of NH3 by measuring electromotive force.
3, catalytic combustion type gas sensor
This gas sensor can be divided into direct catalytic combustion type and catalytic Contact combustion-type two kinds.Its principle of work is: gas sensitive in the energized state, inflammable gas oxidizing fire or under catalyst action oxidizing fire, the heat produced makes the heating wire of sensor heat up, thus its resistance value is changed, and is changed the concentration carrying out measurement gas by measuring resistance.This sensor can only measure inflammable gas, and other are insensitive to non-combustible.
Although current existing gas sensor is of a great variety, principle is different, but the sensor of every type all can only be effective to specific gas, and the selectivity of sensor and the scope of application can not be taken into account, if namely selectivity is good, then detectable gaseous species is few, if detectable gaseous species is many, then selectivity is not high.
Be provide a kind of thin film chip gas sensor in the patented claim of 201410285080.X at number of patent application, comprise one piece of substrate, substrate there is a hearth electrode, substrate and hearth electrode have layer of semiconductor material thin-layer, thin layers of semiconductor material there is one deck unordered type metal film system, fastened point electrode at this unordered type metal film; Described hearth electrode and point electrode are drawn and external impressed current meter by wire; Described structure is placed in the blind boxes of a single radial cut.Also disclose a kind of thin film chip gas sensor preparation method, for the preparation of the sensor chip, prepare one block of backing material, first hearth electrode is plated on the surface of this backing material, plate thin layers of semiconductor material again, be coated with unordered type metal film system again, finally plate point electrode, total is placed in the box closed of a single radial cut; When being applied to detection gas, when gas is by blind boxes, in noble metal system as under the effect of catalyzer, catalyzed chemical reaction occurs, the interface that liberated heat excites the electronics in metal to cross metal and semiconductor forms electric current; Utilize galvanometer sensed current signal, utilize the size of sensed current signal and relatively change the detection realized gas and content thereof.Described substrate is optional the silicon chip of silicon dioxide oxide layer or glass sheet or sheet metal; When selecting substrate process, process substrate, disposal route is corrosion, ion implantation, original position etching and growth Seed Layer.The method of described growth Seed Layer is magnetron sputtering or molecular beam epitaxy or electrochemical deposition.The features such as the thin film chip gas sensor of this application has highly sensitive, and response is fast, and selectivity is good, and structure is simple, and the life-span is long, and can design for any gas, compensate for the shortcoming that traditional gas sensors can be taken into account.
Be provide a kind of integrated chip type oxygen sensor and preparation method thereof in the patented claim of 201010147931.6 at number of patent application, its preparation method comprises the following steps: the first step, by the same PVB of Zirconium oxide powder of 5% moles yttrium, terpinol and dibutyl phthalate (DBP) with 70 ~ 86: 6 ~ 12: 4 ~ 9: 4 ~ 9 quality be prepared into slurry than mixing and ball milling, then by double knife edges technology flow casting molding, zirconia green tape is made after natural drying, substrate base substrate is become again, i.e. upper strata zirconia substrate by mould punching; Then the electrode slurry containing 70% ~ 90% platinum powder and electrocondution slurry are printed on the surfaces externally and internally of upper strata zirconia substrate, form potential electrode and contrast electrode; The Electrode connection through hole that inner surface electrode is formed by upper strata zirconia substrate end punching press is connected with the interior electrode connecting piece (19) of outside surface; Second step, by dag, PVB, terpinol and softening agent with 30 ~ 46: 20 ~ 30: 16 ~ 24: 10 ~ 24 mass ratio mixing fully, formation can screen printing sizing agent, and covers on interior electrode surface by this slurry printing; This reference oxygen diffusion gap printed layers width will between upper strata zirconia substrate and contrast electrode width, and thickness will reach 15 to 50 microns, will form elongate slot after sintering; 3rd step, by the same PVB of Zirconium oxide powder of 5% moles yttrium, terpinol and dibutyl phthalate (DBP) with 70 ~ 86: 6 ~ 12: 4 ~ 9: 4 ~ 9 quality be prepared into slurry than mixing and ball milling, then by double knife edges technology flow casting molding, zirconia green tape is made after natural drying, substrate base substrate is become again, i.e. lower floor's zirconia substrate by mould punching; The slurry of the alumina powder reaching more than 97% containing purity is printed on the outside surface of lower floor's zirconia substrate, prepares alumina ceramic insulating layer; Then the electrocondution slurry containing platinum powder is printed on this alumina ceramic insulating layer, and one-step print forms platinum heating element and heating electrode sheet; 4th step, next, with the bonding agent containing zirconia powder, upper strata zirconia substrate and lower floor's zirconia base flaggy are stacked, be heated to 40 ~ 60 degree press closely simultaneously, again potential electrode end is immersed in the slurry containing magnesium aluminate spinel and lift, form the porous ceramics protective seam of parcel one; 5th step, merges parcel all-in-one-piece green compact 1300 ~ 1500 degree of high temperature sinterings 1 ~ 3 hour, prepares integrated chip type oxygen sensor.
Also there is following deficiency in prior art: Die strength does not reach required strength demand, and chip electrode contacts insufficient with measurement gas, impact sensing effect.
Summary of the invention
The present invention is directed to the deficiencies in the prior art, provide that a kind of intensity meets the demands, chip electrode fully contacts with measurement gas, sense respond well sensor chip.
For realizing above-mentioned object, have employed following scheme: a kind of gas sensor chip, by ground floor to the 4th layer totally four lamination electric substrates be overrided to form, wherein,
Described ground floor piezoelectric substrate is provided with reference gas passage;
Be provided with contrast electrode between described ground floor piezoelectric substrate and second layer piezoelectric substrate, described reference gas passage is connected with described contrast electrode;
Be provided with heating electrode between described second layer piezoelectric substrate and third layer piezoelectric substrate, described second layer piezoelectric substrate is coated with gas sensitization film, described gas sensitization film is the polymer film corresponding gas to adsorption and desorption performance;
Described 4th lamination electric substrate is provided with the interdigital figure of golden film and film forming district.
Further, the material of described piezoelectric substrate is zirconia or quartz.
Further, described contrast electrode is coated with porous alumina layer, reference gas passage is communicated with porous alumina layer.
Further, described heating electrode respectively has a layer insulating up and down.
Further, the insulation course material that described heating electrode is upper and lower is compact aluminum oxide matter.
Beneficial effect of the present invention:
The features such as the present invention is provided with the reference channel being exclusively used in and detecting gas, has highly sensitive, and response is fast, and selectivity is good, and structure is simple, and the life-span is long, and can design for any gas, compensate for the shortcoming that traditional gas sensors can be taken into account.
Accompanying drawing explanation
Fig. 1 is the structural representation of gas sensor chip of the present invention.
In figure, 1 is ground floor piezoelectric substrate, and 2 is second layer piezoelectric substrate, and 3 is third layer piezoelectric substrate, and 4 is the 4th lamination electric substrate, and 5 is reference gas passage, and 6 is contrast electrode, and 7 is heating electrode, and 8 is film forming district.
Embodiment
For making the object of the embodiment of the present invention and technical scheme clearly, the technical scheme below in conjunction with embodiment is clearly and completely described.Obviously, described embodiment is a part of embodiment of the present invention, instead of whole embodiments.Based on described embodiments of the invention, the every other embodiment that those of ordinary skill in the art obtain under without the need to the prerequisite of creative work, all belongs to the scope of protection of the invention.
Those skilled in the art of the present technique are appreciated that unless otherwise defined, and all terms used herein (comprising technical term and scientific terminology) have the meaning identical with the general understanding of the those of ordinary skill in field belonging to the present invention.Should also be understood that those terms defined in such as general dictionary should be understood to have the meaning consistent with the meaning in the context of prior art, unless and define as here, can not explain by idealized or too formal implication.
Embodiment 1
A kind of gas sensor chip, by ground floor to the 4th layer totally four lamination electric substrates be overrided to form, wherein,
Described ground floor piezoelectric substrate 1 is provided with reference gas passage 5, and the material of described piezoelectric substrate is zirconia;
Be provided with contrast electrode 6 between described ground floor piezoelectric substrate 1 and second layer piezoelectric substrate 2, described reference gas passage 5 is connected with described contrast electrode 6;
Be provided with heating electrode 7 between described second layer piezoelectric substrate 2 and third layer piezoelectric substrate 3, described second layer piezoelectric substrate 2 is coated with gas sensitization film, described sensitive membrane is the polymer film corresponding gas to adsorption and desorption performance;
Described 4th lamination electric substrate 4 is provided with the interdigital figure of golden film and film forming district 8.
The manufacture method of this gas sensor chip: comprise the following steps:
1) on ground floor piezoelectric substrate 1, reference gas passage 5 is offered;
2) coating gas sensitive membrane on second layer piezoelectric substrate 2;
3) at the surperficial evaporation sacrifice layer of the 4th lamination electric substrate 4, the thickness of described sacrifice layer is 200 nanometers, and described sacrifice layer is carved into the figure of needs; Crossing substrate surface evaporation Ti transition bed and the Au functional film layer successively of sacrifice layer; Ti transition bed above sacrifice layer and Au functional film layer are removed; Wet etching or plasma etching is utilized to be removed by aluminum sacrificial layer; After step 4), form the interdigital figure of golden film and the film forming district 8 of described sound surface wave sensor chip; At film forming district 8 grow sensitivity film floor;
4) contrast electrode 6 is arranged between ground floor piezoelectric substrate 1 and second layer piezoelectric substrate 2, heating electrode 7 is arranged between second layer piezoelectric substrate 2 and third layer piezoelectric substrate 3;
5) ground floor piezoelectric substrate 1 is overlapped together in turn to the 4th lamination electric substrate 4.
Embodiment 2
A kind of gas sensor chip, by ground floor to the 4th layer totally four lamination electric substrates be overrided to form, wherein,
Described ground floor piezoelectric substrate 1 is provided with reference gas passage 5; The material of described piezoelectric substrate is quartz;
Contrast electrode 6 is provided with between described ground floor piezoelectric substrate 1 and second layer piezoelectric substrate 2, described reference gas passage 5 is connected with described contrast electrode 6, described contrast electrode 6 is coated with porous alumina layer, and described reference gas passage 5 is communicated with porous alumina layer;
Be provided with heating electrode 7 between described second layer piezoelectric substrate 2 and third layer piezoelectric substrate 3, described second layer piezoelectric substrate 2 is coated with gas sensitization film, described sensitive membrane is the polymer film corresponding gas to adsorption and desorption performance;
Described 4th lamination electric substrate 4 is provided with the interdigital figure of golden film and film forming district 8.
Described heating electrode 7 respectively have a layer insulating up and down.The insulation course material of described heating electrode about 7 is compact aluminum oxide matter.
The manufacture method of this gas sensor chip: comprise the following steps:
1) on ground floor piezoelectric substrate 1, reference gas passage 5 is offered;
2) coating gas sensitive membrane on second layer piezoelectric substrate 2;
3) at the surperficial evaporation sacrifice layer of the 4th lamination electric substrate 4, the thickness of described sacrifice layer is 300 nanometers, and described sacrifice layer is carved into the figure of needs; Crossing substrate surface evaporation Ti transition bed and the Au functional film layer successively of sacrifice layer; Ti transition bed above sacrifice layer and Au functional film layer are removed; Wet etching or plasma etching is utilized to be removed by aluminum sacrificial layer; After step 4), form the interdigital figure of golden film and the film forming district 8 of described sound surface wave sensor chip; At film forming district 8 grow sensitivity film floor;
4) contrast electrode 6 is arranged between ground floor piezoelectric substrate 1 and second layer piezoelectric substrate 2, heating electrode 7 is arranged between second layer piezoelectric substrate 2 and third layer piezoelectric substrate 3;
5) ground floor piezoelectric substrate 1 is overlapped together in turn to the 4th lamination electric substrate 4.
These are only embodiments of the present invention, it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (5)
1. a gas sensor chip, is characterized in that, by ground floor to the 4th layer totally four lamination electric substrates be overrided to form, wherein,
Described ground floor piezoelectric substrate is provided with reference gas passage;
Be provided with contrast electrode between described ground floor piezoelectric substrate and second layer piezoelectric substrate, described reference gas passage is connected with described contrast electrode;
Be provided with heating electrode between described second layer piezoelectric substrate and third layer piezoelectric substrate, described second layer piezoelectric substrate is coated with gas sensitization film, described gas sensitization film is the polymer film corresponding gas to adsorption and desorption performance;
Described 4th lamination electric substrate is provided with the interdigital figure of golden film and film forming district.
2. a kind of gas sensor chip according to claim 1, is characterized in that, the material of described piezoelectric substrate is zirconia or quartz.
3. a kind of gas sensor chip according to claim 1, is characterized in that, described contrast electrode is coated with porous alumina layer, and reference gas passage is communicated with porous alumina layer.
4. a kind of gas sensor chip according to claim 1, is characterized in that, described heating electrode respectively have a layer insulating up and down.
5. a kind of gas sensor chip according to claim 4, is characterized in that, the upper and lower insulation course material of described heating electrode is compact aluminum oxide matter.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106872549A (en) * | 2015-12-11 | 2017-06-20 | 台湾奈米碳素股份有限公司 | Gas sensor and manufacturing method thereof |
| CN108700534A (en) * | 2016-02-22 | 2018-10-23 | 世美特株式会社 | Gas sensor, gas detection device, gas detection method, and device including gas detection device |
| CN112114007A (en) * | 2020-09-22 | 2020-12-22 | 苏州大学 | Three-electrode gas sensor and preparation method and detection method thereof |
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