CN104362099A - Manufacturing method of high-heat-conductivity copper-clad ceramic substrate - Google Patents
Manufacturing method of high-heat-conductivity copper-clad ceramic substrate Download PDFInfo
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- CN104362099A CN104362099A CN201410475206.XA CN201410475206A CN104362099A CN 104362099 A CN104362099 A CN 104362099A CN 201410475206 A CN201410475206 A CN 201410475206A CN 104362099 A CN104362099 A CN 104362099A
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- 239000000919 ceramic Substances 0.000 title claims abstract description 76
- 239000000758 substrate Substances 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000010949 copper Substances 0.000 claims abstract description 59
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 229910052802 copper Inorganic materials 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 23
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 238000005245 sintering Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 230000005496 eutectics Effects 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 239000011261 inert gas Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000011777 magnesium Substances 0.000 claims description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 239000011734 sodium Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 abstract description 11
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 abstract description 10
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 4
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 3
- 150000004706 metal oxides Chemical class 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002480 Cu-O Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Products (AREA)
Abstract
The invention relates to a manufacturing method of a high-heat-conductivity copper-clad ceramic substrate. The method includes the steps of 1, washing a ceramic sheet base and copper sheets; 2, coating at least one surface of the ceramic sheet base to form an oxide layer on the surface of the ceramic sheet base; 3, annealing the ceramic sheet base under first protective atmosphere; 4, flatly placing at least one copper sheet on at least one surface, coated and annealed, of the ceramic sheet base to allow sintering, under second protective atmosphere. The uniform metal or metal oxide decorating layer is formed on the surface of the AlN or Si3N4 ceramic substrate before pre-oxidizing, and the uniform oxide or nitric oxide transition layer is formed on the surface of the ceramic substrate by pre-heating. The uniform oxide or nitric oxide transition layer helps copper to better wet the surface of the ceramic; the method has the advantages that the bonding strength of the high-heat-conductivity copper-clad ceramic substrate is high, thermal shock resistance and fatigue resistance are excellent, and heat conductivity is high.
Description
Technical field
The invention belongs to field of semiconductor manufacture, particularly a kind of high thermal conductance covers the preparation method of copper ceramic substrate.
Background technology
Along with the enforcement that global range energy-saving reduces discharging, power semiconductor gets most of the attention as effectively utilizing the indispensable key element of electric power energy.Power semiconductor device is applied to the power supply from the electronic product such as PC and household electrical appliances, to the inverter of electric automobile and rolling stock, then to people's every field at one's side such as power governor of photovoltaic generating system.But, current densities and improving constantly of function cause circuit operating temperature constantly to rise, in order to prevent element from damaging because of hot polymerization collection and thermal cycle effect, more and more stricter to the aspect requirement such as low-k, low thermal coefficient of expansion, high heat conductance of baseplate material.At present, the high thermal conductivity material attracted most attention mainly contains AlN, Si
3n
4, the nitride ceramics substrate such as BN.
Directly cover copper (DCB) technology with low cost due to it, and preparation substrate electrical insulation capability, thermal conductivity is good and be widely used in Al
2o
3covering on process for copper of ceramic substrate.But for AlN and Si
3n
4deng nitride ceramics substrate because Cu-O eutectic liquid is poor in the wettability on its surface, must heat-treat nitride ceramics substrate surface, form Al to make its surface
2o
3or SiO
2thin layer, then Copper Foil to be affixed on substrate so that with Cu-O eutectic liquid generation bonding reaction.But carrying out pre-oxidation to nitride surface needs strict controlled condition to be not easy to control, cause producing bubble or strong and insufficient strength when strong conjunction, and be not suitable for the problem of large-scale production etc.And if this layer of too thin meeting of oxide-film causes copper poor in the wetability of ceramic surface, the too thick thermal coefficient of expansion because of oxide layer and nitration case does not mate, produce residual stress, cause bond strength to decline.Therefore the technique preparing this layer of oxide layer is very harsh, and direct oxidation method is difficult to be applied to direct large-scale production.
Summary of the invention
A kind of make pottery high thermal conductance of made copper-clad base plate bond strength and anti-thermal shock fatigue behaviour of copper and nitride that improves is the object of the present invention is to provide to cover the preparation method of copper ceramic substrate.
For solving the problems of the technologies described above, high thermal conductance of the present invention covers the preparation method of copper ceramic substrate, comprises the steps: the first step, cleans ceramics base material and copper sheet; Second step, plated film is carried out, to form one deck compound layer at described ceramics substrate surface in the surface of described ceramics base material at least side; 3rd step, carries out temper to described ceramic base material under the first protective atmosphere; 4th step, under the second protective atmosphere, sintering processes is carried out at least side at least one copper sheet being lain in described ceramics base material on the surface of plated film and temper; Wherein, the temperature of sintering is the fusing point lower than copper but the DCB temperature higher than the eutectic point of copper/oxygen system realizes.
In described second step, be carry out plated film respectively on the surface of described ceramics base material at least both sides.
In described 4th step, be the both sides that at least two copper sheets lain in respectively described ceramics base material carries out compound on the surface of plated film and temper.
In described 3rd step, the temperature of temper is 800 DEG C ~ 1500 DEG C, and the time of temper is 6 minutes ~ 3000 minutes.
In described 3rd step, described first protective atmosphere is external atmosphere pressure or is controlling the inert gas shielding atmosphere that oxygen content is 50ppm ~ 300000ppm.
In described 4th step, described second protective atmosphere is nitrogen protection atmosphere, and the oxygen content of described second protective atmosphere is 0ppm ~ 1000ppm.
In described 4th step, the temperature of sintering processes is 1065 DEG C ~ 1080 DEG C, and the time of sintering processes is 1 minute ~ 500 minutes.
In described second step, described compound layer is cupric, manganese, pick, nickel, sodium, at least one or their combination in any in magnesium elements.
The material of described ceramic substrate is Al or Si
3n
4or BN.
High thermal conductance covers copper ceramic substrate, and described high thermal conductance is covered the preparation method that copper ceramic substrate covers copper ceramic substrate by high thermal conductance and made.
High thermal conductance of the present invention covers the preparation method of copper ceramic substrate at AlN or Si
3n
4form the uniform metal of one deck or modified metal oxide layer on its surface before ceramic substrate pre-oxidation, then the pre-heat treatment of carrying out pottery forms uniform oxide or nitrogen oxide transition zone at ceramic surface.Because transition zone generates to have the thickness evenly feature such as easy to control on uniform finishing coat basis.This layer of transition zone can improve the wetability of copper at ceramic surface, and made copper-clad base plate not only bond strength is high, also has anti-thermal shock excelling in fatigue property, the feature that thermal conductivity is high.
Accompanying drawing explanation
Fig. 1 is preparation method's flow chart that high thermal conductance of the present invention covers copper ceramic substrate;
Fig. 2 is that high thermal conductance of the present invention covers copper ceramic substrate structure schematic diagram.
High thermal conductance of the present invention covers description of reference numerals in preparation method's accompanying drawing of copper ceramic substrate:
1-ceramics base material 2-transition zone 3-copper sheet
Embodiment
Below in conjunction with accompanying drawing, the preparation method that high thermal conductance of the present invention covers copper ceramic substrate is described in further detail.
As shown in Figure 1 and Figure 2, the preparation method that high thermal conductance of the present invention covers copper ceramic substrate mainly comprises standby (copper oxidation processes) four steps of cleaning → nitride surface process → heat treatment → DBC legal system.
The first step, cleans ceramics base material 1 and copper sheet 3.With acid-base solution, deionized water, carry out cleaning the impurity removing material surface to copper sheet 3 and ceramics base material 1 by techniques such as ultrasonic cleaning, spray, predrainages.
Second step, the surface of ceramics base material 1 both sides adopts the methods such as vacuum evaporation, ion plating, sputter coating, chemical vapour deposition (CVD), physical vapour deposition (PVD), spraying, plating, chemical plating or sol-gal process form the uniform metal level of one deck or metal compound layer on ceramics base material 1 surface.Choose Cu or containing Cu compound, due to covering in copper ceramic substrate with containing Cu compound treatment ceramic surface, other elements would not be introduced, be more conducive to follow-up graphics process technique.
3rd step, carries out temper to described ceramic base material under the first protective atmosphere.In air atmosphere or under the nitrogen protection atmosphere of the certain oxygen content of control, design temperature 800 DEG C ~ 1500 DEG C, the time of temper is 6 minutes ~ 3000 minutes, forms the uniform compound transition zone 2 of one deck on surface.Because transition zone 2 generates to have the even manageable feature of thickness on uniform finishing coat basis, this layer of transition zone 2 can improve the wetability of copper at ceramic surface.
4th step, under the second protective atmosphere, sintering processes is carried out at least side at least one copper sheet 3 being lain in described ceramics base material 1 on the surface of plated film and temper.According to DCB technique, nitride ceramics surface good with surface treatment for copper sheet 3 good for pre-oxidation is carried out covering copper sintering processes.The temperature of sintering processes is 1065 DEG C ~ 1080 DEG C, and the time of sintering processes is 1 minute ~ 500 minutes, and atmosphere is nitrogen protection atmosphere, and oxygen content is 0ppm ~ 1000ppm.
Finally, the ceramic-copper composite substrate cool to room temperature that will obtaining, forms copper ceramic substrate.
High thermal conductance of the present invention covers the preparation method of copper ceramic substrate at AlN or Si
3n
4form the uniform metal of one deck or modified metal oxide layer on its surface before ceramic substrate pre-oxidation, then the pre-heat treatment of carrying out pottery forms uniform oxide or nitrogen oxide transition zone at ceramic surface.Because transition zone generates to have the thickness evenly feature such as easy to control on uniform finishing coat basis.This layer of transition zone can improve the wetability of copper at ceramic surface, and made copper-clad base plate not only bond strength is high, also has anti-thermal shock excelling in fatigue property, the feature that thermal conductivity is high.
Below the preferred embodiment of the invention is illustrated, but the invention is not limited to described embodiment, those of ordinary skill in the art also can make all equivalent modification or replacement under the prerequisite without prejudice to the invention spirit, and these equivalent modification or replacement are all included in the application's claim limited range.
Claims (10)
1. high thermal conductance covers the preparation method of copper ceramic substrate, it is characterized in that, comprises the steps:
The first step, cleans ceramics base material and copper sheet;
Second step, plated film is carried out, to form one deck compound layer at described ceramics substrate surface in the surface of described ceramics base material at least side;
3rd step, carries out temper to described ceramic base material under the first protective atmosphere;
4th step, under the second protective atmosphere, sintering processes is carried out at least side at least one copper sheet being lain in described ceramics base material on the surface of plated film and temper;
Wherein, the temperature of sintering is the fusing point lower than copper but the DCB temperature higher than the eutectic point of copper/oxygen system realizes.
2. high thermal conductance according to claim 1 covers the preparation method of copper ceramic substrate, it is characterized in that, in described second step, is carry out plated film respectively on the surface of described ceramics base material both sides.
3. high thermal conductance according to claim 2 covers the preparation method of copper ceramic substrate, it is characterized in that, in described 4th step, be the both sides that at least two copper sheets lain in respectively described ceramics base material carries out compound on the surface of plated film and temper.
4. high thermal conductance according to claim 1 covers the preparation method of copper ceramic substrate, it is characterized in that, in described 3rd step, the temperature of temper is 800 DEG C ~ 1500 DEG C, and the time of temper is 6 minutes ~ 3000 minutes.
5. high thermal conductance according to claim 1 covers the preparation method of copper ceramic substrate, it is characterized in that, in described 3rd step, described first protective atmosphere is external atmosphere pressure or is controlling the inert gas shielding atmosphere that oxygen content is 50ppm ~ 300000ppm.
6. high thermal conductance according to claim 1 covers the preparation method of copper ceramic substrate, it is characterized in that, in described 4th step, described second protective atmosphere is nitrogen protection atmosphere; The oxygen content of described second protective atmosphere is 0ppm ~ 1000ppm.
7. high thermal conductance according to claim 6 covers the preparation method of copper ceramic substrate, it is characterized in that, in described 4th step, the temperature of sintering processes is 1065 DEG C ~ 1080 DEG C, and the time of sintering processes is 1 minute ~ 500 minutes.
8. high thermal conductance according to claim 6 covers the preparation method of copper ceramic substrate, it is characterized in that, in described second step, described compound layer is cupric, manganese, pick, nickel, sodium, at least one or their combination in any in magnesium elements.
9. high thermal conductance according to claim 1 covers the preparation method of copper ceramic substrate, it is characterized in that, the material of described ceramic substrate is AlN or Si
3n
4or BN.
10. high thermal conductance covers copper ceramic substrate, it is characterized in that, described high thermal conductance is covered the preparation method that copper ceramic substrate covers copper ceramic substrate by the high thermal conductance that claim 1 ~ 9 is arbitrarily described and made.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475206.XA CN104362099A (en) | 2014-09-17 | 2014-09-17 | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410475206.XA CN104362099A (en) | 2014-09-17 | 2014-09-17 | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104362099A true CN104362099A (en) | 2015-02-18 |
Family
ID=52529351
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410475206.XA Pending CN104362099A (en) | 2014-09-17 | 2014-09-17 | Manufacturing method of high-heat-conductivity copper-clad ceramic substrate |
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| CN (1) | CN104362099A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715101A (en) * | 2013-12-23 | 2014-04-09 | 上海申和热磁电子有限公司 | Hot pressing method for direct copper-coated ceramic base board |
| CN105622126A (en) * | 2015-12-25 | 2016-06-01 | 上海申和热磁电子有限公司 | Si3N4 ceramic copper-clad substrate and preparation method thereof |
| CN107369625A (en) * | 2017-07-01 | 2017-11-21 | 合肥圣达电子科技实业有限公司 | The manufacture method of DBC substrates and the DBC substrates manufactured using this method |
| WO2018121219A1 (en) * | 2016-12-29 | 2018-07-05 | 比亚迪股份有限公司 | Heat dissipation substrate, preparation method and application thereof, and electronic component |
| CN109734470A (en) * | 2019-02-22 | 2019-05-10 | 上海产业技术研究院 | Cover copper silicon nitride ceramic substrate and preparation method thereof |
| CN111785644A (en) * | 2020-06-29 | 2020-10-16 | 江苏富乐德半导体科技有限公司 | Method for preparing pre-welded copper-clad ceramic substrate through laser cladding |
| CN111908924A (en) * | 2020-07-22 | 2020-11-10 | 江苏富乐德半导体科技有限公司 | Silicon nitride ceramic chip interface modification method and copper-clad ceramic substrate preparation method |
| CN112552070A (en) * | 2019-09-26 | 2021-03-26 | 比亚迪股份有限公司 | Silicon nitride ceramic copper-clad substrate and preparation method thereof |
| CN115611659A (en) * | 2022-09-05 | 2023-01-17 | 湖南师范大学 | Method for preparing aluminum oxide and copper-nickel-aluminum-oxygen composite film on surface of aluminum nitride substrate |
| CN118239797A (en) * | 2024-03-26 | 2024-06-25 | 江苏富乐华功率半导体研究院有限公司 | Preparation method of high-reliability ZTA ceramic copper-clad substrate |
| CN119219427A (en) * | 2024-09-26 | 2024-12-31 | 江苏富乐华半导体科技股份有限公司 | A DCB aluminum nitride ceramic chip oxidation method |
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103715101A (en) * | 2013-12-23 | 2014-04-09 | 上海申和热磁电子有限公司 | Hot pressing method for direct copper-coated ceramic base board |
| CN105622126A (en) * | 2015-12-25 | 2016-06-01 | 上海申和热磁电子有限公司 | Si3N4 ceramic copper-clad substrate and preparation method thereof |
| WO2018121219A1 (en) * | 2016-12-29 | 2018-07-05 | 比亚迪股份有限公司 | Heat dissipation substrate, preparation method and application thereof, and electronic component |
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| CN109734470A (en) * | 2019-02-22 | 2019-05-10 | 上海产业技术研究院 | Cover copper silicon nitride ceramic substrate and preparation method thereof |
| CN112552070B (en) * | 2019-09-26 | 2022-03-18 | 比亚迪股份有限公司 | Silicon nitride ceramic copper-clad substrate and preparation method thereof |
| CN112552070A (en) * | 2019-09-26 | 2021-03-26 | 比亚迪股份有限公司 | Silicon nitride ceramic copper-clad substrate and preparation method thereof |
| CN111785644A (en) * | 2020-06-29 | 2020-10-16 | 江苏富乐德半导体科技有限公司 | Method for preparing pre-welded copper-clad ceramic substrate through laser cladding |
| CN111908924A (en) * | 2020-07-22 | 2020-11-10 | 江苏富乐德半导体科技有限公司 | Silicon nitride ceramic chip interface modification method and copper-clad ceramic substrate preparation method |
| CN115611659A (en) * | 2022-09-05 | 2023-01-17 | 湖南师范大学 | Method for preparing aluminum oxide and copper-nickel-aluminum-oxygen composite film on surface of aluminum nitride substrate |
| CN118239797A (en) * | 2024-03-26 | 2024-06-25 | 江苏富乐华功率半导体研究院有限公司 | Preparation method of high-reliability ZTA ceramic copper-clad substrate |
| CN118239797B (en) * | 2024-03-26 | 2024-09-17 | 江苏富乐华功率半导体研究院有限公司 | Preparation method of high-reliability ZTA ceramic copper-clad substrate |
| CN119219427A (en) * | 2024-09-26 | 2024-12-31 | 江苏富乐华半导体科技股份有限公司 | A DCB aluminum nitride ceramic chip oxidation method |
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