CN104330889B - Electrowetting display panel and manufacturing method thereof, and display device - Google Patents
Electrowetting display panel and manufacturing method thereof, and display device Download PDFInfo
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- CN104330889B CN104330889B CN201410446760.5A CN201410446760A CN104330889B CN 104330889 B CN104330889 B CN 104330889B CN 201410446760 A CN201410446760 A CN 201410446760A CN 104330889 B CN104330889 B CN 104330889B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 104
- 239000010409 thin film Substances 0.000 claims abstract description 58
- 239000011347 resin Substances 0.000 claims description 46
- 229920005989 resin Polymers 0.000 claims description 46
- 210000001503 joint Anatomy 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 29
- 238000002161 passivation Methods 0.000 claims description 29
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 150000002632 lipids Chemical class 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 241
- 229920002120 photoresistant polymer Polymers 0.000 description 86
- 230000004888 barrier function Effects 0.000 description 18
- 239000003921 oil Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 16
- 239000002184 metal Substances 0.000 description 16
- 239000003792 electrolyte Substances 0.000 description 13
- 230000002209 hydrophobic effect Effects 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 11
- 238000009413 insulation Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 6
- 230000005611 electricity Effects 0.000 description 5
- 238000001755 magnetron sputter deposition Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000002207 thermal evaporation Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- 238000005507 spraying Methods 0.000 description 4
- -1 n-dodecane Hydrocarbon Chemical class 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229940094933 n-dodecane Drugs 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003818 SiH2Cl2 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical compound FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 1
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- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
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Abstract
The invention provides an electrowetting display panel and a manufacturing method thereof, and a display device and belongs to the field of display. The electrowetting display panel includes a first underlayer substrate, a second underlayer substrate arranged to be opposite to the first underlayer substrate, and a plurality of pixel units arranged on the first underlayer substrate. A plurality of thin film transistor switches which are in one-to-one correspondence with the plurality of pixel units are arranged on the first underlayer substrate. A reflection layer is arranged on the first underlayer substrate and at least part of the reflection layer is capable of shielding the thin film transistor switches. The technical scheme is capable of improving the display luminance of the display panel and reducing the power consumption of the display panel.
Description
Technical field
The present invention relates to display field, particularly relate to a kind of Electrowetting display panel and preparation method thereof, display device.
Background technology
Electrowetting shows a kind of Display Technique being to grow up in recent years, and it is to interfacial tension using interface charge
Impact, makes the contact angle of drop change, thus causing diffusion or the contraction of drop, leads to show the change of area.Electricity
Moistening be widely used in Electronic Paper show, the field such as Liquid Light, micro-fluid chip.
Fig. 1 and Fig. 2 is the generalized section of existing electric moistening display.As shown in figure 1, existing electric moistening display includes
The first underlay substrate 1 being oppositely arranged and the second underlay substrate 17, are arranged on pixel electrode 10 between two substrates, public
Electrode 16, barrier layer 11, hydrophobic layer 12, barricade 13, oil droplet layer 14, electrolyte layer 15.Wherein, oil droplet layer is generally n-dodecane
Hydrocarbon or the coloured ink of band, electrolyte layer 15 is arranged on oil droplet layer 14, and electrolyte layer is generally transparent polar liquid,
Can be water or saline solution etc., oil droplet layer and electrolyte layer are all surrounded with barricade.
When no voltage is applied, as shown in figure 1, oil droplet layer 14 uniformly spreads on hydrophobic layer 12, now reflect
Light all can pass through coloured oil droplet, and the pigment particles in oil droplet can optionally absorb the light of Partial Feature wavelength, make reflection
Light has certain color, and the reflected light of whole electric moistening display is dark.
Upon application of a voltage, as shown in Fig. 2 electrolyte layer 15 is changed with hydrophobic layer 12 surface tension, extrude barricade
Interior oil droplet layer 14, makes this oil droplet layer 14 shift to barricade side.Oil droplet shrinks, and reflected light is most of to pass through water, only partly leads to
Cross oil droplet, reflect the color of underlay substrate.
Existing electric moistening display comes for pixel electrode applied voltage generally by thin film transistor switch, but by
In electric moistening display and be not provided with black matrix, therefore, the note of extraneous light produces impact, impact to the performance of thin film transistor (TFT)
The display of picture；Additionally, upon application of a voltage, because pixel electrode usually adopts ITO, preferably, reflecting properties are relatively for light transmission
Difference, the reflected light leading to electric moistening display is dark so that the contrast of display is relatively low, affects display effect, and if will carry
The contrast of high display, the power consumption of the electric moistening display to be increased that is bound to.
Content of the invention
The technical problem to be solved in the present invention is to provide a kind of Electrowetting display panel and preparation method thereof, display device,
The display brightness of display floater can be improved, reduce the power consumption of display floater.
For solving above-mentioned technical problem, embodiments of the invention provide technical scheme as follows：
On the one hand, a kind of Electrowetting display panel is provided, relative with described first underlay substrate including the first underlay substrate
Second underlay substrate of setting, the multiple pixel cells being arranged on described first underlay substrate, on described first underlay substrate
It is provided with and the plurality of pixel cell multiple thin film transistor switch correspondingly, wherein, on described first underlay substrate
It is provided with reflecting layer, at least partly described thin film transistor switch can be blocked in described reflecting layer.
Further, described reflecting layer is conductive reflective.
Further, the material in described reflecting layer is one or more of platinum, chromium and aluminum.
Further, described reflecting layer includes blocking the first reflective graphics of thin film transistor switch and is located at described
Second reflective graphics of the viewing area of pixel cell.
Further, separated by organic resin layer between described reflecting layer and thin film transistor switch.
Further, described reflecting layer is additionally provided with passivation layer.
Further, described organic resin layer is formed with the first half lap scarf joint via；Described passivation layer is corresponding to described first
The region of half lap scarf joint via is formed with the second half lap scarf joint via, described second half lap scarf joint via and described first half lap scarf joint groups of vias
Close and form pixel electrode via, the pixel electrode of described pixel cell passes through described pixel electrode via and corresponding thin film transistor (TFT)
The drain electrode of switch connects.
Further, described second reflective graphics are the pixel electrode of described pixel cell, and described pixel electrode passes through institute
The via stated on organic resin layer is connected with the drain electrode of corresponding thin film transistor switch.
Further, described second reflective graphics are located under the pixel electrode of described pixel cell, described pixel electrode
Connected with the drain electrode of corresponding thin film transistor switch by described pixel electrode via.
Further, the thickness of described organic resin layer is 1.5～3.5um.
The embodiment of the present invention additionally provides a kind of display device, including Electrowetting display panel as above.
The embodiment of the present invention additionally provides a kind of manufacture method of Electrowetting display panel, and described display floater includes first
The second underlay substrate that underlay substrate is oppositely arranged with described first underlay substrate, it is arranged on described first underlay substrate
Multiple pixel cells, described first underlay substrate are provided with and the plurality of pixel cell multiple film crystals correspondingly
Pipe switchs, and described manufacture method includes：
Reflecting layer is formed on described first underlay substrate, at least partly described film crystal can be blocked in described reflecting layer
Pipe switchs.
Further, form described reflecting layer to include：
Formation can block the first reflective graphics of thin film transistor switch and the viewing area being located at described pixel cell
The second reflective graphics.
Further, described manufacture method also includes：
Form organic resin layer between described reflecting layer and thin film transistor switch.
Further, described manufacture method also includes：
Passivation layer is formed on described reflecting layer.
Further, form described organic resin layer to include：Form the described organic tree including the first half lap scarf joint via
Lipid layer；
Form described passivation layer to include：Form the second half lap scarf joint via including corresponding described first half lap scarf joint via
Passivation layer, described second half lap scarf joint via combines formation pixel electrode via, described pixel list with described first half lap scarf joint via
The pixel electrode of unit is connected with the drain electrode of corresponding thin film transistor switch by described pixel electrode via.
Further, described second reflective graphics are the pixel electrode of described pixel cell, form described organic resin layer
Including：Form the described organic resin layer including pixel electrode via, described pixel electrode passes through on described organic resin layer
The drain electrode of pixel electrode via and corresponding thin film transistor switch connect.
Embodiments of the invention have the advantages that：
In such scheme, the first underlay substrate is provided with reflecting layer, at least partly thin film crystalline substance can be blocked in this reflecting layer
Body pipe switchs, and the performance of such thin film transistor switch will not be by extraneous illumination effect, in addition, less in backlight source strength
When, display floater can reflect extraneous natural light by this reflecting layer and be shown, thus reaching preferable display brightness, can
With effective power consumption reducing backlight.
Brief description
Fig. 1 and Fig. 2 is the generalized section of existing electric moistening display；
Fig. 3 forms the schematic diagram of gate electrode for the embodiment of the present invention on underlay substrate；
Fig. 4 forms the schematic diagram of gate insulation layer, semiconductor active layer and ohmic contact layer for the embodiment of the present invention；
Fig. 5 forms the schematic diagram of source electrode and drain electrode for the embodiment of the present invention；
Fig. 6 forms the schematic diagram of organic resin layer for the embodiment of the present invention；
Fig. 7 forms the schematic diagram in reflecting layer for the embodiment of the present invention；
Fig. 8 forms the schematic diagram of passivation layer for the embodiment of the present invention；
Fig. 9 forms the schematic diagram of pixel electrode for the embodiment of the present invention；
Figure 10 forms the schematic diagram of barrier layer and hydrophobic layer for the embodiment of the present invention；
Figure 11 forms the schematic diagram of barricade for the embodiment of the present invention；
Figure 12 forms the schematic diagram of oil droplet layer and electrolyte layer for the embodiment of the present invention；
Figure 13 is formed after public electrode for the embodiment of the present invention, by the schematic diagram of two underlay substrate encapsulation；
Figure 14 is the structural representation of the present invention one specific embodiment Electrowetting display panel.
Reference
1st, 17 underlay substrate, 2 gate electrode, 3 gate insulation layer, 4 semiconductor active layer, 5 ohmic contact layer 6 source and drain gold
Belong to layer 7 organic resin layer 8 reflecting layer 9 passivation layer, 10 pixel electrode, 11 barrier layer, 12 hydrophobic layer 13 barricade 14
Oil droplet layer 15 electrolyte layer 16 public electrode
Specific embodiment
For making embodiments of the invention technical problem to be solved, technical scheme and advantage clearer, below in conjunction with
Drawings and the specific embodiments are described in detail.
Embodiments of the invention provide a kind of Electrowetting display panel and preparation method thereof, display device, it is possible to increase aobvious
Show the display brightness of panel, reduce the power consumption of display floater.
Embodiments provide a kind of Electrowetting display panel, including the first underlay substrate and described first substrate
The second underlay substrate that substrate is oppositely arranged, the multiple pixel cells being arranged on described first underlay substrate, described first lining
It is provided with substrate and the plurality of pixel cell multiple thin film transistor switch correspondingly, wherein, described first lining
Reflecting layer is provided with substrate, at least partly described thin film transistor switch can be blocked in described reflecting layer.
In the Electrowetting display panel of the present invention, the first underlay substrate is provided with reflecting layer, at least partly this reflecting layer
Thin film transistor switch can be blocked, the performance of such thin film transistor (TFT) will not be by extraneous illumination effect, in addition, in backlight
When intensity is less, display floater can reflect extraneous natural light by this reflecting layer and be shown, thus reaching preferably aobvious
Show brightness, can effectively reduce the power consumption of backlight.
Further, described reflecting layer can be conductive reflective.The material in described reflecting layer can be in platinum, chromium and aluminum
One or more.
Further, described reflecting layer includes blocking the first reflective graphics of thin film transistor switch and is located at described
Second reflective graphics of the viewing area of pixel cell.First reflective graphics can block thin film transistor switch, makes thin film brilliant
The performance of body pipe switch will not be by extraneous illumination effect.Second reflective graphics can be shown by the extraneous natural light of reflection
Show, improve contrast and the brightness of display picture.
Further, separated by organic resin layer between described reflecting layer and thin film transistor switch.
Further, described reflecting layer is additionally provided with passivation layer.
Further, described organic resin layer is formed with the first half lap scarf joint via；Described passivation layer is corresponding to described first
The region of half lap scarf joint via is formed with the second half lap scarf joint via, described second half lap scarf joint via and described first half lap scarf joint groups of vias
Close and form pixel electrode via, the pixel electrode of described pixel cell passes through described pixel electrode via and corresponding thin film transistor (TFT)
The drain electrode of switch connects.Passivation layer can be avoided to be filled in pixel electrode via for the setting of half lap scarf joint via it is ensured that pixel
Electrode and the connection of drain electrode.
In one embodiment of the invention, a reflecting layer can be separately provided on thin film transistor switch, shape on reflecting layer
Become passivation layer, then form pixel electrode on reflecting layer, as shown in figure 13, the Electrowetting display panel of the present embodiment specifically wraps
Include：
Underlay substrate 1；
Gate electrode 2 on underlay substrate 1 and grid line；
It is located at the gate insulation layer 3 being formed with gate electrode 2 and the underlay substrate 1 of grid line；
It is located at semiconductor active layer 4 and the ohmic contact layer 5 being formed with the underlay substrate 1 of gate insulation layer 3；
It is located at the source electrode being formed with semiconductor active layer 4 and the underlay substrate 1 of ohmic contact layer 5, drain electrode sum
According to line；
Organic resin layer 7 on formation active electrode, the underlay substrate 1 of drain electrode data line；
It is located at the reflecting layer 8 being formed with the underlay substrate 1 of organic resin layer 7, reflecting layer 8 is included positioned at thin film transistor (TFT)
First reflective graphics of switch top and the second reflective graphics of the viewing area positioned at pixel cell；
It is located at the passivation layer 9 being formed with the underlay substrate 1 in reflecting layer 8；
It is located at the pixel electrode 10 being formed with the underlay substrate 1 of passivation layer 9；
It is located at barrier layer 11 and the hydrophobic layer 12 being formed with the underlay substrate 1 of pixel electrode 10；
It is located at the barricade 13 that is formed with barrier layer 11 and the underlay substrate 1 of hydrophobic layer 12 and being located to be limited by barricade 13
Oil droplet layer 14 in fixed pixel region and electrolyte layer 15；
Underlay substrate 17；
Public electrode 16 on underlay substrate 17.
Further, in another embodiment of the present invention, this reflecting layer can also be used to make pixel electrode, now, thin
It is provided with organic resin layer on film transistor switch, organic resin layer is provided with reflecting layer, reflecting layer includes brilliant positioned at thin film
The first reflective graphics on body pipe switch and the second reflective graphics as pixel electrode, reflecting layer no longer arranges passivation layer,
Described pixel electrode is connected with the drain electrode of corresponding thin film transistor switch by the via on described organic resin layer.As Figure 14
Shown, the Electrowetting display panel of the present embodiment specifically includes：
Underlay substrate 1；
Gate electrode 2 on underlay substrate 1 and grid line；
It is located at the gate insulation layer 3 being formed with gate electrode 2 and the underlay substrate 1 of grid line；
It is located at semiconductor active layer 4 and the ohmic contact layer 5 being formed with the underlay substrate 1 of gate insulation layer 3；
It is located at the source electrode being formed with semiconductor active layer 4 and the underlay substrate 1 of ohmic contact layer 5, drain electrode sum
According to line；
Organic resin layer 7 on formation active electrode, the underlay substrate 1 of drain electrode data line；
It is located at the reflecting layer 8 being formed with the underlay substrate 1 of organic resin layer 7, reflecting layer 8 is included positioned at thin film transistor (TFT)
First reflective graphics of switch top and the second reflective graphics of the viewing area positioned at pixel cell, the wherein second reflective graphics
Serve as the pixel electrode 10 of Electrowetting display panel；
It is located at barrier layer 11 and the hydrophobic layer 12 being formed with the underlay substrate 1 in reflecting layer 8；
It is located at the barricade 13 that is formed with barrier layer 11 and the underlay substrate 1 of hydrophobic layer 12 and being located to be limited by barricade 13
Oil droplet layer 14 in fixed pixel region and electrolyte layer 15；
Underlay substrate 17；
Public electrode 16 on underlay substrate 17.
Further, the thickness of described organic resin layer is 1.5～3.5um.The surface of organic resin layer is relatively flat, can
Formed in the way of using spin coating, in the embodiment of the present invention, the thickness ratio of organic resin layer is larger, can effectively reduce parasitic electricity
Hold, thus reducing the power consumption of Electrowetting display panel.
The embodiment of the present invention additionally provides a kind of display device, including Electrowetting display panel as above.Wherein, electricity
The structure of moistening display floater and the same above-described embodiment of operation principle, will not be described here.In addition, display device other parts
Structure may be referred to prior art, this is not described in detail herein.This display device can be：Electronic Paper, TV, display
Device, DPF, mobile phone, panel computer etc. have product or the part of any display function.
The embodiment of the present invention additionally provides a kind of manufacture method of Electrowetting display panel, and described display floater includes first
The second underlay substrate that underlay substrate is oppositely arranged with described first underlay substrate, it is arranged on described first underlay substrate
Multiple pixel cells, described first underlay substrate are provided with and the plurality of pixel cell multiple film crystals correspondingly
Pipe switchs, and wherein, described manufacture method includes：
Reflecting layer is formed on described first underlay substrate, at least partly described film crystal can be blocked in described reflecting layer
Pipe switchs.
In the Electrowetting display panel that the present invention makes, the first underlay substrate is provided with reflecting layer, at least partly this is anti-
Penetrate layer and can block thin film transistor switch, the performance of such thin film transistor switch will not by extraneous illumination effect, in addition,
When backlight source strength is less, display floater can reflect extraneous natural light by this reflecting layer and be shown, thus reaching
Preferably display brightness, can effectively reduce the power consumption of backlight.
Further, form described reflecting layer to include：
Formation can block the first reflective graphics of thin film transistor switch and the viewing area being located at described pixel cell
The second reflective graphics.
Further, described manufacture method also includes：
Form organic resin layer between described reflecting layer and thin film transistor switch.
Further, described manufacture method also includes：
Passivation layer is formed on described reflecting layer.
Further, form described organic resin layer to include：Form the described organic tree including the first half lap scarf joint via
Lipid layer；
Form described passivation layer to include：Form the second half lap scarf joint via including corresponding described first half lap scarf joint via
Passivation layer, described second half lap scarf joint via combines formation pixel electrode via, described pixel list with described first half lap scarf joint via
The pixel electrode of unit is connected with the drain electrode of corresponding thin film transistor switch by described pixel electrode via.
Further, described second reflective graphics are the pixel electrode of described pixel cell, form described organic resin layer
Including：Form the described organic resin layer including pixel electrode via, described pixel electrode passes through on described organic resin layer
The drain electrode of pixel electrode via and corresponding thin film transistor switch connect.
Below in conjunction with the accompanying drawings and specific embodiment is carried out to Electrowetting display panel of the present invention and preparation method thereof
It is discussed in detail：
In the Electrowetting display panel of the present embodiment, it is a reflecting layer to be separately provided on thin film transistor switch, anti-
Penetrate formation passivation layer on layer, then pixel electrode is formed on reflecting layer, the manufacture method of the present embodiment specifically includes following steps：
Step 1, offer one underlay substrate 1, form the figure of gate electrode 2 and grid line on underlay substrate 1；
Wherein, underlay substrate 1 can be glass substrate or quartz base plate.Specifically, magnetron sputtering or thermal evaporation can be adopted
Method on underlay substrate 1 deposit thickness be aboutBarrier metal layer, barrier metal layer can be Cu, Al,
The metals such as Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and the alloy of these metals, barrier metal layer can for single layer structure or
Multiple structure, multiple structure such as Cu Mo, Ti Cu Ti, Mo Al Mo etc..Barrier metal layer coats one layer of photoresist, adopts
With mask plate, photoresist is exposed, makes photoresist form the non-reservation region of photoresist and photoresist reservation region, wherein, light
Photoresist reservation region corresponds to the figure region of grid line and gate electrode, the non-reservation region of photoresist correspond to above-mentioned figure with
Outer region；Carry out development treatment, the photoresist of the non-reservation region of photoresist is completely removed, the photoetching of photoresist reservation region
Glue thickness keeps constant；Etch away the grid metal film of the non-reservation region of photoresist by etching technics completely, peel off remaining
Photoresist, as shown in figure 3, form the figure of grid line and gate electrode 2.
Step 2, gate insulation layer 3, semiconductor active layer 4 and ohmic contact layer are formed on the underlay substrate 1 complete step 1
5；
Specifically, using plasma enhancing chemical vapor deposition (PECVD) method completes the underlay substrate 1 of step 1
Upper deposit thickness isGate insulation layer, gate insulation layer can be from oxide, nitride or oxynitriding
Compound, corresponding reacting gas is SiH4、NH3、N2Or SiH2Cl2、NH3、N2.
Afterwards semiconductor active layer material and Ohmic contact layer material are sequentially depositing on gate insulation layer 3, in Ohmic contact
Coat one layer of photoresist on layer material, using mask plate, photoresist is exposed, make photoresist form the non-reserved area of photoresist
Domain and region is fully retained.Wherein, photoresist is fully retained the figure that region corresponds to semiconductor active layer and ohmic contact layer
Shape region, the non-reservation region of photoresist corresponds to the region beyond semiconductor active layer and the figure of ohmic contact layer；
Carry out development treatment, the photoresist of the non-reservation region of photoresist is completely removed, the photoresist that photoresist is fully retained region is thick
Degree keeps constant.Etch away semiconductor active layer and the ohmic contact layer of the non-reservation region of photoresist by etching technics completely
Material, peels off remaining photoresist, forms structure as shown in Figure 4.
Step 3, on the underlay substrate 1 complete step 2 formed source electrode, the figure of drain electrode data line；
Specifically, magnetron sputtering, thermal evaporation or other film build method can be adopted on the underlay substrate 1 complete step 2
Deposition a layer thickness is aboutSource and drain metal level 6, Source and drain metal level can be Cu, Al, Ag, Mo, Cr,
The metals such as Nd, Ni, Mn, Ti, Ta, W and the alloy of these metals.Source and drain metal level can be single layer structure or multilamellar knot
Structure, multiple structure such as Cu Mo, Ti Cu Ti, Mo Al Mo etc..Source and drain metal level coats one layer of photoresist, using covering
Lamina membranacea is exposed to photoresist, makes photoresist form the non-reservation region of photoresist and photoresist reservation region, wherein, photoresist
Reservation region corresponds to source electrode, the figure region of drain electrode data line, and the non-reservation region of photoresist corresponds to above-mentioned
Region beyond figure；Carry out development treatment, the photoresist of the non-reservation region of photoresist is completely removed, photoresist reservation region
Photoresist thickness keep constant；Etch away the Source and drain metal level of the non-reservation region of photoresist by etching technics completely, and
The ohmic contact layer of active layer region, peels off remaining photoresist, forms structure as shown in Figure 5.
Step 4, on the underlay substrate 1 complete step 3 formed organic resin layer 7；
Specifically, one layer of organic resin layer 7 is formed by way of rotary spraying on the underlay substrate 1 complete step 3,
The thickness of organic resin layer can be 1.5～3.5um, preferably 2.0～3.5um, after exposure imaging, formed and include the first half
The figure of the organic resin layer of overlap joint via, as shown in Figure 6.The surface of the organic resin layer being formed by the way of rotary spraying
Relatively flat, and the thickness ratio of the organic resin layer being formed is larger, can effectively reduce the parasitic electricity of Electrowetting display panel
Hold, and then reduce the power consumption of Electrowetting display panel.
Step 5, on the underlay substrate 1 complete step 4 formed reflecting layer 8；
Specifically, can in the underlay substrate 1 completing step 4 by the method deposit thickness of magnetron sputtering or thermal evaporation about
ForReflecting layer, the material in reflecting layer can be the conjunction of the metals such as platinum, chromium and aluminum and these metals
Gold, reflecting layer can be single layer structure or multiple structure.Reflecting layer coats one layer of photoresist, using mask plate to photoetching
Glue is exposed, and makes photoresist form the non-reservation region of photoresist and photoresist reservation region, wherein, photoresist reservation region pair
Should be in the figure region in reflecting layer, the non-reservation region of photoresist corresponds to the region beyond above-mentioned figure；Carry out at development
Reason, the photoresist of the non-reservation region of photoresist is completely removed, and the photoresist thickness of photoresist reservation region keeps constant；Pass through
Etching technics etches away the reflecting layer of the non-reservation region of photoresist completely, peels off remaining photoresist, forms the figure in reflecting layer,
As shown in fig. 7, reflecting layer includes above thin film transistor switch, can block the first reflectogram of thin film transistor switch
Shape and the second reflective graphics of the viewing area positioned at pixel cell.This reflecting layer can block thin film transistor switch so that
The performance of thin film transistor switch will not be by extraneous illumination effect；In addition, when backlight source strength is less, can be anti-by this
Penetrating the extraneous natural light of layer reflection to be shown, thus reaching preferable display brightness, and can effectively reduce backlight
Power consumption.
Step 6, on the underlay substrate 1 complete step 5 formed passivation layer 9；
Specifically, can on the underlay substrate 1 complete step 5 using PECVD method deposit thickness bePassivation layer, passivation layer can be from oxide, nitride or oxynitrides, specifically, passivation
Layer material can be SiNx, SiOx or Si (ON) x, and passivation layer can be single layer structure or adopt silicon nitride and oxidation
The double-layer structure that silicon is constituted.Form the second half lap scarf joint via including corresponding first half lap scarf joint via by patterning processes
Passivation layer figure, as shown in figure 8, the second half lap scarf joint via combine with the first half lap scarf joint via formation pixel electrode via.
Step 7, on the underlay substrate 1 complete step 6 formed pixel electrode 10 figure.
Specifically, the underlay substrate 1 complete step 6 is about by the method deposit thickness of magnetron sputtering or thermal evaporationTransparency conducting layer, transparency conducting layer can be ITO, IZO or other transparent metal oxide,
Coat one layer of photoresist on transparency conducting layer, using mask plate, photoresist is exposed, make photoresist form photoresist and do not protect
Stay region and photoresist reservation region, wherein, photoresist reservation region corresponds to the figure region of pixel electrode 10, photoetching
The non-reservation region of glue corresponds to the region beyond above-mentioned figure；Carry out development treatment, the photoresist quilt of the non-reservation region of photoresist
Remove completely, the photoresist thickness of photoresist reservation region keeps constant；Etch away photoresist completely by etching technics not protecting
Stay the electrically conducting transparent layer film in region, peel off remaining photoresist, form the figure of pixel electrode 10, as shown in figure 9, pixel is electric
Pole 10 is connected with drain electrode by pixel electrode via.
Step 8, barrier layer 11 and hydrophobic layer 12 are formed on the underlay substrate 1 complete step 7.
Specifically, can on the underlay substrate 1 complete step 7 using PECVD method deposit thickness beBarrier layer, barrier layer can be applied on barrier layer from oxide, nitride or oxynitrides
Cover one layer of photoresist, using mask plate, photoresist is exposed, make photoresist form the non-reservation region of photoresist and photoresist
Reservation region, wherein, photoresist reservation region corresponds to the figure region of barrier layer, and the non-reservation region of photoresist corresponds to
Region beyond above-mentioned figure；Carry out development treatment, the photoresist of the non-reservation region of photoresist is completely removed, photoresist retains
The photoresist thickness in region keeps constant；Etch away the barrier layer of the non-reservation region of photoresist by etching technics completely, peel off
Remaining photoresist, forms the figure of barrier layer 11.The effect of barrier layer 11 is to prevent dielectric breakdown, prevents electrolyte and pixel
Electrode contact.
The method adopting rotary spraying afterwards on the underlay substrate 1 be formed with barrier layer 11 sprays a strata tetrafluoroethene
Polymer is processed so as to be activated to hydrophobic layer 12 surface as hydrophobic layer 12, the method using reactive ion etching, is formed
Structure as shown in Figure 10.
Step 9, on the underlay substrate 1 complete step 8 formed barricade 13.
Specifically, one layer of organic resin layer is formed by way of rotary spraying on the underlay substrate 1 complete step 8,
The thickness of organic resin layer can be 2～4um, and exposure imaging forms the figure of barricade 13, as shown in figure 11.
Step 10, oil droplet layer 14 and electrolyte layer 15 are formed on the underlay substrate 1 complete step 9.
Specifically, using needle tubing, oil droplet layer 14 and electrolyte layer 15 are injected in the pixel region being limited by barricade 13.
Wherein oil droplet layer 14 is lyophobic dust, generally n-dodecane or the coloured ink of band.Electrolyte layer 15 is hydrophilic
The saline solution such as material, generally water or KCl, form structure as shown in figure 12.
Step 11, on underlay substrate 17 formed public electrode 16 figure.
Specifically, underlay substrate 17 is about by the method deposit thickness of magnetron sputtering or thermal evaporationTransparency conducting layer, transparency conducting layer can be ITO, IZO or other transparent metal oxide,
Coat one layer of photoresist on transparency conducting layer, using mask plate, photoresist is exposed, make photoresist form photoresist and do not protect
Stay region and photoresist reservation region, wherein, photoresist reservation region corresponds to the figure region of public electrode 16, photoetching
The non-reservation region of glue corresponds to the region beyond above-mentioned figure；Carry out development treatment, the photoresist quilt of the non-reservation region of photoresist
Remove completely, the photoresist thickness of photoresist reservation region keeps constant；Etch away photoresist completely by etching technics not protecting
Stay the electrically conducting transparent layer film in region, peel off remaining photoresist, form the figure of public electrode 16.
Afterwards the underlay substrate 1 completing step 1-10 and the underlay substrate 17 completing step 11 are packaged, are formed such as
Electrowetting display panel described in Figure 13.
The embodiment of the present invention is provided with organic resin layer, organic resin layer between thin film transistor switch and pixel electrode
Thickness ratio larger, can effectively reduce the parasitic electricity between source electrode, drain electrode and the pixel electrode of thin film transistor switch
Hold, thus reducing the power consumption of Electrowetting display panel.The setting in reflecting layer ensure that the performance of thin film transistor switch simultaneously
Will not be by extraneous illumination effect, in addition, when backlight source strength is less, extraneous natural light can be reflected by this reflecting layer
Being shown, thus reaching preferable display brightness, being improved the contrast of display.
The above is the preferred embodiment of the present invention it is noted that for those skilled in the art
For, on the premise of without departing from principle of the present invention, some improvements and modifications can also be made, these improvements and modifications
Should be regarded as protection scope of the present invention.
Claims (15)
1. a kind of Electrowetting display panel, serves as a contrast including the first underlay substrate is oppositely arranged with described first underlay substrate second
Substrate, the multiple pixel cells being arranged on described first underlay substrate, described first underlay substrate is provided with described
Multiple pixel cells correspondingly multiple thin film transistor switch it is characterised in that being provided with described first underlay substrate
Reflecting layer, at least partly described reflecting layer can block described thin film transistor switch；
Described reflecting layer includes can blocking the first reflective graphics of thin film transistor switch completely and is located at described pixel cell
Viewing area the second reflective graphics, described second reflective graphics be pixel electrode.
2. Electrowetting display panel according to claim 1 is it is characterised in that described reflecting layer is conductive reflective.
3. Electrowetting display panel according to claim 2 it is characterised in that described reflecting layer material be platinum, chromium and
One or more of aluminum.
4. Electrowetting display panel according to claim 1 is it is characterised in that described reflecting layer and thin film transistor switch
Between separated by organic resin layer.
5. Electrowetting display panel according to claim 4 is it is characterised in that be additionally provided with passivation on described reflecting layer
Layer.
6. Electrowetting display panel according to claim 5 is it is characterised in that described organic resin layer is formed with the first half
Overlap joint via；Described passivation layer is formed with the second half lap scarf joint via in the region of corresponding described first half lap scarf joint via, and described the
Two half lap scarf joint vias combine formation pixel electrode via with described first half lap scarf joint via, and the pixel electrode of described pixel cell leads to
Cross described pixel electrode via to connect with the drain electrode of corresponding thin film transistor switch.
7. Electrowetting display panel according to claim 4 is it is characterised in that described pixel electrode passes through described organic tree
Via in lipid layer is connected with the drain electrode of corresponding thin film transistor switch.
8. Electrowetting display panel according to claim 5 is it is characterised in that described second reflective graphics are located at described picture
Under the pixel electrode of plain unit, described pixel electrode passes through the drain electrode of pixel electrode via and corresponding thin film transistor switch
Connect.
9. Electrowetting display panel according to claim 4 is it is characterised in that the thickness of described organic resin layer is 1.5
～3.5um.
10. a kind of display device is it is characterised in that include Electrowetting display panel as claimed in any one of claims 1-9 wherein.
A kind of 11. manufacture methods of Electrowetting display panel, described display floater includes the first underlay substrate and described first lining
The second underlay substrate that substrate is oppositely arranged, the multiple pixel cells being arranged on described first underlay substrate, described first
Be provided with underlay substrate with the plurality of pixel cell correspondingly multiple thin film transistor switch it is characterised in that institute
State manufacture method to include：
Reflecting layer is formed on described first underlay substrate, at least partly described reflecting layer can be blocked described thin film transistor (TFT) and be opened
Close；
Form described reflecting layer to include：
Formation can block the first reflective graphics of thin film transistor switch and the viewing area being located at described pixel cell completely
The second reflective graphics, described second reflective graphics are the pixel electrode of described pixel cell.
The manufacture method of 12. Electrowetting display panels according to claim 11 it is characterised in that described manufacture method also
Including：
Form organic resin layer between described reflecting layer and thin film transistor switch.
The manufacture method of 13. Electrowetting display panels according to claim 12 it is characterised in that described manufacture method also
Including：
Passivation layer is formed on described reflecting layer.
The manufacture method of 14. Electrowetting display panels according to claim 13 it is characterised in that
Form described organic resin layer to include：Form the described organic resin layer including the first half lap scarf joint via；
Form described passivation layer to include：Form the passivation of the second half lap scarf joint via including corresponding described first half lap scarf joint via
Layer, described second half lap scarf joint via combines formation pixel electrode via with described first half lap scarf joint via, described pixel cell
Pixel electrode is connected with the drain electrode of corresponding thin film transistor switch by described pixel electrode via.
The manufacture method of 15. Electrowetting display panels according to claim 12 is it is characterised in that form described organic tree
Lipid layer includes：Form the described organic resin layer including pixel electrode via, described pixel electrode passes through described organic resin
Pixel electrode via on layer is connected with the drain electrode of corresponding thin film transistor switch.
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| CN101373777A (en) * | 2007-08-24 | 2009-02-25 | 群康科技(深圳)有限公司 | Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate |
| CN101694542A (en) * | 2009-09-30 | 2010-04-14 | 深圳莱宝高科技股份有限公司 | Thin film transistor for electrowetting display device and manufacturing method thereof |
| CN101710210A (en) * | 2009-12-30 | 2010-05-19 | 友达光电股份有限公司 | Electrowetting display panel |
| CN103364941A (en) * | 2012-04-10 | 2013-10-23 | 三星显示有限公司 | Display device and fabricating method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101373777A (en) * | 2007-08-24 | 2009-02-25 | 群康科技(深圳)有限公司 | Thin-film transistor substrate, electric moistening type display apparatus method for manufacturing the thin-film transistor substrate |
| CN101694542A (en) * | 2009-09-30 | 2010-04-14 | 深圳莱宝高科技股份有限公司 | Thin film transistor for electrowetting display device and manufacturing method thereof |
| CN101710210A (en) * | 2009-12-30 | 2010-05-19 | 友达光电股份有限公司 | Electrowetting display panel |
| CN103364941A (en) * | 2012-04-10 | 2013-10-23 | 三星显示有限公司 | Display device and fabricating method thereof |
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