CN104308760A - Fixed abrasive polishing cloth adopting nanometer aggregation structure adhesive - Google Patents
Fixed abrasive polishing cloth adopting nanometer aggregation structure adhesive Download PDFInfo
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- CN104308760A CN104308760A CN201410539722.4A CN201410539722A CN104308760A CN 104308760 A CN104308760 A CN 104308760A CN 201410539722 A CN201410539722 A CN 201410539722A CN 104308760 A CN104308760 A CN 104308760A
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- 238000005498 polishing Methods 0.000 title claims abstract description 82
- 239000004744 fabric Substances 0.000 title claims abstract description 61
- 230000002776 aggregation Effects 0.000 title claims abstract description 7
- 238000004220 aggregation Methods 0.000 title claims abstract description 7
- 239000000853 adhesive Substances 0.000 title 1
- 230000001070 adhesive effect Effects 0.000 title 1
- 239000003082 abrasive agent Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000003190 viscoelastic substance Substances 0.000 claims abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000002245 particle Substances 0.000 claims description 22
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 19
- 239000011148 porous material Substances 0.000 claims description 10
- -1 KOH Chemical class 0.000 claims description 8
- 239000002086 nanomaterial Substances 0.000 claims description 6
- 150000007529 inorganic bases Chemical class 0.000 claims description 4
- 150000007530 organic bases Chemical class 0.000 claims description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- 239000002105 nanoparticle Substances 0.000 abstract description 15
- 239000000758 substrate Substances 0.000 description 12
- 239000002585 base Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000000243 solution Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000005543 nano-size silicon particle Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000013538 functional additive Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229920001730 Moisture cure polyurethane Polymers 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002114 nanocomposite Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
本发明涉及一种采用纳米聚集结构磨料的固定磨料抛光布,其特征在于:由抛光布基材及均匀分布于抛光布基材中的磨料构成,该固定磨料为纳米聚集结构磨料,该纳米聚集结构磨料为由纳米子粒子聚集而成的微米级球形磨料。本发明采用纳米聚集结构磨料,其为由纳米粒子聚集的微米级球形磨料,微米级球形磨料可以使纳米粒子不易陷入粘弹性材料的抛光布基材中,在保证良好的表面光洁度的同时,充分发挥加工作用。
The invention relates to a fixed abrasive polishing cloth using nano-aggregated abrasives, which is characterized in that: it is composed of a polishing cloth base material and abrasives uniformly distributed in the polishing cloth base material, the fixed abrasive is a nano-aggregated abrasive, and the nano-aggregated Structural abrasives are micron-sized spherical abrasives formed by the aggregation of nano-particles. The present invention adopts nano-aggregated abrasives, which are micron-scale spherical abrasives aggregated by nanoparticles. The micron-scale spherical abrasives can make nanoparticles difficult to sink into the polishing cloth base material of viscoelastic material, while ensuring good surface smoothness, fully Play a processing role.
Description
技术领域technical field
本发明涉及硬脆性材料表面精密加工用抛光工具,特别是一种采用纳米聚集结构磨料的固定磨料抛光布及其加工方法。The invention relates to a polishing tool for precise machining of the surface of hard and brittle materials, in particular to a fixed abrasive polishing cloth using nano-agglomerated abrasives and a processing method thereof.
背景技术Background technique
目前,各种微电子基板材料(如Si、SiC、玻璃等材料的基板),SiO2绝缘膜及微电子元器件的超精密加工普遍采用纳米磨料抛光液,最常用的为纳米氧化硅抛光液。但由于抛光液(游离磨料)的使用所带来一系列的环境问题,固定磨料的加工日益得到重视。在固定磨料工具中,固定磨料抛光布最容易实现超精密表面的加工。固定磨料抛光布主要由抛光布基材及固定于基材中的磨料构成,但目前的固定磨料抛光布的加工效率和表面加工质量,都不如现行的游离磨料加工。究其原因,与抛光布所采用的磨料有着直接的关系。由于纳米级磨料很难均匀添加到抛光布中,而且易陷入抛光布基材,加工效率低。目前采用的大多是由粉粹法制成的不规则形状的硬质的传统磨料。粒径通常在亚微米,与现行纳米抛光液的加工表面相比,容易划伤加工表面,影响表面加工质量。此外,为了提高化学去除作用,固定磨料抛光布通常需要与化学溶液并用,比如Si基板通常采用pH10的碱性水溶液,加工中容易与空气中的CO2反应,pH值不易控制。At present, various microelectronic substrate materials (such as substrates of Si, SiC, glass and other materials), SiO2 insulating film and ultra-precision processing of microelectronic components generally use nano-abrasive polishing fluid, the most commonly used is nano-silicon oxide polishing fluid . However, due to a series of environmental problems caused by the use of polishing fluid (free abrasive), the processing of fixed abrasive has been paid more and more attention. Among fixed abrasive tools, fixed abrasive polishing cloths are the easiest to achieve ultra-precision surfaces. The fixed abrasive polishing cloth is mainly composed of a polishing cloth substrate and abrasives fixed in the substrate, but the processing efficiency and surface processing quality of the current fixed abrasive polishing cloth are not as good as the current free abrasive processing. The reason is directly related to the abrasive used in the polishing cloth. Because nanoscale abrasives are difficult to add evenly into the polishing cloth, and are easy to sink into the base material of the polishing cloth, the processing efficiency is low. Most of the currently used hard traditional abrasives are made of irregular shapes by pulverization. The particle size is usually submicron. Compared with the processing surface of the current nano-polishing fluid, it is easy to scratch the processing surface and affect the surface processing quality. In addition, in order to improve the chemical removal effect, the fixed abrasive polishing cloth usually needs to be used together with a chemical solution. For example, the Si substrate usually uses an alkaline aqueous solution with a pH of 10, which is easy to react with CO2 in the air during processing, and the pH value is difficult to control.
发明内容Contents of the invention
本发明的目的在于克服现有技术的不足,提供一种采用纳米聚集结构磨料的固定磨料抛光布,其采用纳米聚集结构的微米级球形粒子作为固定磨料抛光布的磨料,纳米子粒子可以保证表面加工质量,微米级粒径既可以避免纳米子粒子陷入抛光布基材,保证加工效率,又有利于均匀抛光布的制备,功能性添加材料可以提高不同的被加工工件的材料的加工性能。The purpose of the present invention is to overcome the deficiencies in the prior art, to provide a fixed abrasive polishing cloth using nano-aggregate structure abrasives, which adopts micron-scale spherical particles of nano-aggregate structure as the abrasive of the fixed abrasive polishing cloth, and the nano-particles can ensure the surface Processing quality, micron-sized particle size can not only prevent nano-particles from falling into the polishing cloth substrate, ensure processing efficiency, but also facilitate the preparation of uniform polishing cloth, and functional additives can improve the processing performance of different workpiece materials.
本发明解决其技术问题是通过以下技术方案实现的:The present invention solves its technical problem and realizes through the following technical solutions:
一种采用纳米聚集结构磨料的固定磨料抛光布,其特征在于:由抛光布基材及均匀分布于抛光布基材中的磨料构成,该固定磨料为纳米聚集结构磨料,该纳米聚集结构磨料为由纳米子粒子聚集而成的微米级球形磨料。A fixed abrasive polishing cloth using a nano aggregate structure abrasive, characterized in that: it is composed of a polishing cloth base material and an abrasive uniformly distributed in the polishing cloth base material, the fixed abrasive is a nano aggregate structure abrasive, and the nano aggregate structure abrasive is Micron-sized spherical abrasive aggregated by nano-particles.
而且,所述的抛光布基材为聚氨酯等粘弹性材料。Moreover, the base material of the polishing cloth is a viscoelastic material such as polyurethane.
而且,所述的抛光布的固定磨料添加率为6voL%-50vol%,气孔率10vol%-50vol%。Moreover, the fixed abrasive addition rate of the polishing cloth is 6vol%-50vol%, and the porosity is 10vol%-50vol%.
而且,所述的纳米聚集结构磨料的纳米子粒子的粒径为1-80nm,以细孔容积为0.1-5cm3/g的聚集密度聚集成粒径为1-20um左右的微米级球形磨料。Moreover, the particle size of the nano sub-particles of the nano-aggregated abrasive is 1-80nm, and aggregates into a micron-sized spherical abrasive with a particle size of about 1-20um at an aggregation density of 0.1-5cm 3 /g pore volume.
而且,所述的纳米聚集结构磨料的超微细孔的孔径为1-80nm。Moreover, the pore diameter of the ultrafine pores of the nano aggregate structure abrasive is 1-80nm.
而且,所述的纳米聚集结构磨料为纳米聚集氧化硅、纳米聚集氧化铝、纳米聚集氧化铈或多晶金刚石等。Moreover, the nano-aggregated abrasive is nano-aggregated silicon oxide, nano-aggregated alumina, nano-aggregated cerium oxide, or polycrystalline diamond.
而且,所述的纳米聚集氧化硅磨料中还含有碱性纳米材料。Moreover, the nano-aggregated silicon oxide abrasive also contains basic nano-materials.
而且,所述的碱性纳米材料为KOH等无机碱,或对二氮己环或胺类化合物等的有机碱。Moreover, the basic nanomaterials are inorganic bases such as KOH, or organic bases such as p-diazepine or amine compounds.
本发明的优点和有益效果为:Advantage of the present invention and beneficial effect are:
1、本发明的固定磨料抛光布,采用纳米聚集结构磨料,其为由纳米粒子聚集的微米级球形磨料,微米级球形磨料可以使纳米粒子不易陷入粘弹性材料的抛光布基材中,在保证良好的表面光洁度的同时,充分发挥加工作用,此外微米粒子附近的空间—容屑槽,可以保证磨屑的排除,有利于实现高效去除。1. The fixed abrasive polishing cloth of the present invention adopts a nano aggregate structure abrasive, which is a micron-scale spherical abrasive aggregated by nanoparticles, and the micron-scale spherical abrasive can make the nanoparticles difficult to fall into the polishing cloth base material of the viscoelastic material. While the surface finish is good, it can give full play to the processing effect. In addition, the space near the micron particles—the chip pocket can ensure the removal of abrasive debris, which is conducive to achieving efficient removal.
2、本发明的固定磨料抛光布,其纳米聚集结构磨料为含有1-80nm超微细孔结构的粒子,比同粒径的传统的实心结构的磨料的机械强度低,硬度小,所以通常机械去除作用低,有利于减小对被加工表面的划伤,和亚表面的机械损伤。2. In the fixed abrasive polishing cloth of the present invention, its nano-aggregated abrasive is a particle containing a 1-80nm ultra-fine pore structure, which has a lower mechanical strength and less hardness than the traditional solid-structured abrasive of the same particle size, so it is usually mechanically removed. The effect is low, which is beneficial to reduce the scratch on the processed surface and the mechanical damage of the sub-surface.
3、本发明的固定磨料抛光布,其纳米聚集结构磨料的粒子通常比传统磨料的比表面积大,表面活性强,具有较强的化学去除作用,有效的提高了加工效率。3. In the fixed abrasive polishing cloth of the present invention, the particles of the nano-aggregated abrasive generally have a larger specific surface area than traditional abrasives, strong surface activity, strong chemical removal effect, and effectively improve processing efficiency.
4、本发明的固定磨料抛光布,还可向纳米聚集结构氧化硅磨料中加入纳米碱性材料,如KOH等无机碱或胺类化合物等有机碱,在Si基板的加工中,用去离子水代替碱性水溶液的抛光溶液,不仅可以提高Si基板的去除率,和表面光洁度,还能提高KOH的使用效率。减轻环境负担。能提高氧化硅磨料的化学去除作用。4. The fixed abrasive polishing cloth of the present invention can also add nano-alkali materials, such as inorganic bases such as KOH or organic bases such as amine compounds, to the nano-aggregated silicon oxide abrasives. In the processing of Si substrates, deionized water is used to The polishing solution that replaces the alkaline aqueous solution can not only improve the removal rate of the Si substrate and the surface finish, but also improve the use efficiency of KOH. Reduce environmental burden. Can improve the chemical removal of silicon oxide abrasives.
附图说明Description of drawings
图1为本发明固定磨料抛光布的结构和加工原理示意图;Fig. 1 is the structure and processing principle schematic diagram of fixed abrasive polishing cloth of the present invention;
图2为本图1中纳米聚集磨料的放大图(结合工作原理示意图);Fig. 2 is the magnified view of nano-aggregate abrasive in this Fig. 1 (in conjunction with schematic diagram of working principle);
图3为现行纳米氧化硅抛光液与纳米聚集氧化硅抛光液加工特性对比;Fig. 3 is the comparison of the processing characteristics of the current nano-silicon oxide polishing fluid and the nano-gathered silicon oxide polishing fluid;
图4为现行天然氧化硅磨料和纳米聚集氧化硅的固定磨料抛光布的加工性能比较。Fig. 4 is the processing performance comparison of the fixed abrasive polishing cloth of the existing natural silicon oxide abrasive and nano-aggregated silicon oxide.
附图标记说明:Explanation of reference signs:
1-固定磨料抛光布、2-研磨机工作台、3-去离子水溶液、4-被加工工件、5-抛光布基材、6-纳米聚集结构磨料、7-纳米子粒子、8-容屑槽、9-超微细孔、10-功能性添加材料(如KOH)。1-fixed abrasive polishing cloth, 2-grinding machine table, 3-deionized aqueous solution, 4-workpiece to be processed, 5-polishing cloth base material, 6-nanometer aggregation structure abrasive, 7-nano sub-particles, 8-chip Groove, 9-ultrafine pores, 10-functional additive material (such as KOH).
具体实施方式Detailed ways
下面通过具体实施例对本发明作进一步详述,以下实施例只是描述性的,不是限定性的,不能以此限定本发明的保护范围。The present invention will be further described in detail below through the specific examples, the following examples are only descriptive, not restrictive, and cannot limit the protection scope of the present invention with this.
一种采用纳米聚集结构磨料的固定磨料抛光布,其由抛光布基材5及均匀添加于抛光布基材中的固定磨料构成,该固定磨料为纳米聚集结构磨料6,该纳米聚集结构磨料为由纳米子粒子7聚集的微米级球形磨料。A fixed abrasive polishing cloth adopting a nano aggregate structure abrasive, which is composed of a polishing cloth base material 5 and a fixed abrasive uniformly added to the polishing cloth base material, the fixed abrasive is a nano aggregate structure abrasive 6, and the nano aggregate structure abrasive is Micron-sized spherical abrasive aggregated by nano-particles 7.
抛光布基材为聚氨酯等粘弹性材料。纳米聚集结构磨料添加于抛光布基材中的添加率为6voL%-50vol%,气孔率10vol%-50vol%。纳米子粒子粒径为1-80nm,以细孔容积为0.1cm3/g-5cm3/g的聚集密度聚集成粒径为1-20um的微米级球形磨料。微米级球形磨料的细孔孔径为1-80nm。纳米聚集粒子为纳米聚集氧化硅、纳米聚集氧化铝、纳米聚集氧化铈和多晶金刚石。The base material of the polishing cloth is a viscoelastic material such as polyurethane. The addition rate of the nano-aggregated abrasive to the polishing cloth base material is 6 vol%-50 vol%, and the porosity is 10 vol%-50 vol%. The particle size of the nano-particles is 1-80nm, and the aggregation density of the pore volume is 0.1cm 3 /g-5cm 3 /g, which is aggregated into a micron-sized spherical abrasive with a particle size of 1-20um. The pore size of the micron spherical abrasive is 1-80nm. The nano-aggregated particles are nano-aggregated silica, nano-aggregated alumina, nano-aggregated ceria and polycrystalline diamond.
纳米聚集氧化硅磨料中还含有碱性等功能性纳米材料。碱性纳米材料为KOH等无机碱,和对二氮己环及胺类化合物等的有机碱。The nano-aggregated silica abrasive also contains functional nano-materials such as alkali. The basic nanomaterials are inorganic bases such as KOH, and organic bases such as p-diazepine and amine compounds.
本发明的固定磨料抛光布,采用纳米聚集结构磨料,其为由纳米子粒子聚集的微米级球形磨料,微米级球形磨料可以使纳米子粒子不易陷入粘弹性材料的抛光布基材中,在保证良好的表面光洁度的同时,充分发挥加工作用,此外微米粒子附近的空间—容屑槽8,可以保证磨屑的排除,有利于实现高效去除。The fixed abrasive polishing cloth of the present invention adopts nano-aggregated abrasives, which are micron-scale spherical abrasives gathered by nano-particles, and micron-scale spherical abrasives can make nano-particles difficult to fall into the polishing cloth base material of viscoelastic material. While having a good surface finish, it can give full play to the processing function. In addition, the space near the micron particles—the chip groove 8—can ensure the removal of abrasive debris, which is conducive to achieving efficient removal.
一种采用纳米聚集结构磨料的固定磨料抛光布的加工方法,其特征在于:该加工方法的步骤为:A method for processing a fixed abrasive polishing cloth using a nano aggregate structure abrasive, characterized in that: the steps of the processing method are:
⑴.纳米聚集结构磨料的制备方法:⑴. Preparation method of nano-aggregated abrasives:
先采用溶胶凝胶法等制备纳米子粒子,再采用湿式或干式制粉将纳米子粒子聚集成微米级粒子,成为纳米聚集结构磨料。Nano-particles are first prepared by sol-gel method, etc., and then wet or dry pulverization is used to aggregate the nano-particles into micron-sized particles to become nano-aggregated abrasives.
⑵.碱性等功能性材料的添加:⑵. Addition of alkaline and other functional materials:
可利用纳米聚集结构磨料的超微细孔的强吸附性,用浸润法等将碱性KOH等材料吸入纳米聚集材料,也可以采用纳米复合材料制备法。The strong adsorption of the ultra-fine pores of the nano-aggregate structure abrasive can be used to absorb alkaline KOH and other materials into the nano-aggregate material by the infiltration method, and the preparation method of the nano-composite material can also be used.
⑶.纳米聚集结构磨料添加至抛光布中的方法为:⑶. The method of adding nano-aggregated abrasives to the polishing cloth is:
将纳米聚集结构磨料添加到聚氨酯的预聚物,混合搅拌均匀,注入模型。Add the nano aggregate structure abrasive to the polyurethane prepolymer, mix and stir evenly, and inject into the model.
⑷.再经硬化,树脂成熟。⑷. After hardening, the resin is mature.
⑸脱模后制成固定磨料抛光布成品。⑸ After demoulding, it is made into a finished product of fixed abrasive polishing cloth.
本发明的固定磨料抛光布的实验过程为:The experimental process of fixed abrasive polishing cloth of the present invention is:
将固定磨料抛光布1平贴于研磨机工作台面2上,一起绕中心以n1做匀速回转。将去离子水溶液3,匀速滴向抛光布上,均匀分布抛光布表面。被加工工件(基板)4的被加工面朝下置于抛光布上,在研磨压力P作用下,绕工件中心以n2匀速回转,进行固定磨料的抛光加工。Attach the fixed abrasive polishing cloth 1 flatly on the working table 2 of the grinder, and rotate around the center at a constant speed of n 1 . Drop the deionized aqueous solution 3 onto the polishing cloth at a constant speed, and evenly distribute the surface of the polishing cloth. The processed workpiece (substrate) 4 is placed on the polishing cloth with the processed surface facing down, and under the action of the grinding pressure P, it rotates around the center of the workpiece at a constant speed of n to perform polishing with fixed abrasives.
加工条件:被加工工件3”Si基板,加工前表面粗糙度0.25μm Ra,1.8μm Rz;抛光液浓度5wt%,pH10.5;研磨压力50kPa,回转速度(工作台,工件)60rpm,抛光时间15min。Processing conditions: 3” Si substrate of workpiece to be processed, surface roughness before processing 0.25μm Ra, 1.8μm Rz; concentration of polishing solution 5wt%, pH 10.5; grinding pressure 50kPa, rotation speed (table, workpiece) 60rpm, polishing time 15min.
实验结果说明:Explanation of the experimental results:
1.如图3中所示,采用平均粒径为5um的纳米聚集结构氧化硅抛光液,其纳米子粒子粒径为10-20nm,与现行的粒径为10-20nm的氧化硅抛光液相比,能迅速实现平滑表面的加工,可以减少Si基板的抛光工序数目,并能得到约0.8nmRa的表面粗糙度,与纳米氧化硅抛光液的加工表面粗糙度(0.75nmRa)相近。1. As shown in Figure 3, the nano-agglomerated silicon oxide polishing fluid with an average particle diameter of 5um is adopted, and its nano-particle particle diameter is 10-20nm, which is the silicon oxide polishing fluid phase of 10-20nm with the existing particle diameter Compared, the processing of smooth surface can be realized quickly, the number of polishing steps of Si substrate can be reduced, and the surface roughness of about 0.8nmRa can be obtained, which is similar to the processing surface roughness (0.75nmRa) of nano-silicon oxide polishing solution.
2.石英凸球端面的加工工艺,由通常为9um-3um-1um-抛光的4道工序,可以减为9um-3um-抛光3道工序。此外,图3所示的加工时研磨机工作台消耗的电流可降低10%以上。2. The processing technology of the end face of the quartz convex ball can be reduced from the usual 9um-3um-1um-polishing 4 processes to 9um-3um-polishing 3 processes. In addition, the current consumed by the grinding machine table can be reduced by more than 10% during the processing shown in Fig. 3 .
3.如图4中所示,2种氧化硅的固定磨料抛光布(氧化硅的添加率25vol%,气孔率26vol%)的加工性能比较,与pH10.5的水溶液并用。采用平均粒径约5um的纳米聚集结构氧化硅的固定磨料抛光布,与平均粒径3.5um的传统的氧化硅的固定磨料研磨布相比,不易划伤加工表面,加工表面光洁度明显提高,可达0.6-0.9nmRa.加工效率也明显提高。3. As shown in Figure 4, the processability comparison of two kinds of fixed abrasive polishing cloths of silicon oxide (the addition rate of silicon oxide is 25vol%, the porosity of 26vol%) is used together with the aqueous solution of pH 10.5. Compared with the traditional fixed abrasive polishing cloth of silicon oxide with an average particle size of 3.5um, the fixed abrasive polishing cloth of nano-aggregated silicon oxide with an average particle size of about 5um is not easy to scratch the processed surface, and the surface finish is significantly improved. Up to 0.6-0.9nmRa. The processing efficiency is also significantly improved.
4.采用添加碱性材料的纳米聚集氧化硅的固定磨料抛光布,可以不采用pH10.5的碱性化学溶液,只用去离子水加工Si基板,达到与现行纳米抛光液相同的抛光效果。4. The fixed abrasive polishing cloth of nano-aggregated silicon oxide added with alkaline materials can not use the alkaline chemical solution of pH 10.5, but only use deionized water to process the Si substrate, so as to achieve the same polishing effect as the current nano-polishing solution.
尽管为说明目的公开了本发明的实施例和附图,但是本领域的技术人员可以理解:在不脱离本发明及所附权利要求的精神和范围内,各种替换、变化和修改都是可能的,因此,本发明的范围不局限于实施例和附图所公开的内容。Although the embodiments and drawings of the present invention are disclosed for the purpose of illustration, those skilled in the art can understand that various replacements, changes and modifications are possible without departing from the spirit and scope of the present invention and the appended claims Therefore, the scope of the present invention is not limited to what is disclosed in the embodiments and drawings.
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CN110193777A (en) * | 2019-06-06 | 2019-09-03 | 嘉兴星微纳米科技有限公司 | Processing induction type grinding pad based on viscoelastic material |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87102270A (en) * | 1986-03-25 | 1988-01-06 | 罗德尔公司 | base material for grinding, lapping and polishing |
CN1197543A (en) * | 1995-09-22 | 1998-10-28 | 美国3M公司 | Method of modifying an exposed surface of semiconductor wafer |
JP2007000997A (en) * | 2005-06-24 | 2007-01-11 | Tadamasa Fujimura | Flexible and antistatic nano diamond grinder |
US20080092455A1 (en) * | 2006-01-27 | 2008-04-24 | Saint-Gobain Abrasives, Inc. | Abrasive article with cured backsize layer |
CN101372560A (en) * | 2008-10-15 | 2009-02-25 | 中国科学院上海微系统与信息技术研究所 | Abrasive for chemical mechanical polishing and preparation method thereof |
CN101428404A (en) * | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | Fixed abrasive grinding polishing pad and method of manufacturing the same |
CN101668825A (en) * | 2007-01-23 | 2010-03-10 | 圣戈本磨料股份有限公司 | coated abrasive products containing aggregates |
-
2014
- 2014-10-13 CN CN201410539722.4A patent/CN104308760B/en active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87102270A (en) * | 1986-03-25 | 1988-01-06 | 罗德尔公司 | base material for grinding, lapping and polishing |
CN1197543A (en) * | 1995-09-22 | 1998-10-28 | 美国3M公司 | Method of modifying an exposed surface of semiconductor wafer |
JP2007000997A (en) * | 2005-06-24 | 2007-01-11 | Tadamasa Fujimura | Flexible and antistatic nano diamond grinder |
US20080092455A1 (en) * | 2006-01-27 | 2008-04-24 | Saint-Gobain Abrasives, Inc. | Abrasive article with cured backsize layer |
CN101668825A (en) * | 2007-01-23 | 2010-03-10 | 圣戈本磨料股份有限公司 | coated abrasive products containing aggregates |
CN101372560A (en) * | 2008-10-15 | 2009-02-25 | 中国科学院上海微系统与信息技术研究所 | Abrasive for chemical mechanical polishing and preparation method thereof |
CN101428404A (en) * | 2008-12-22 | 2009-05-13 | 南京航空航天大学 | Fixed abrasive grinding polishing pad and method of manufacturing the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110193777A (en) * | 2019-06-06 | 2019-09-03 | 嘉兴星微纳米科技有限公司 | Processing induction type grinding pad based on viscoelastic material |
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