CN104302083A - Atmospheric low temperature plasma graft polymerization flowing water powder material modification device - Google Patents
Atmospheric low temperature plasma graft polymerization flowing water powder material modification device Download PDFInfo
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- CN104302083A CN104302083A CN201410584476.4A CN201410584476A CN104302083A CN 104302083 A CN104302083 A CN 104302083A CN 201410584476 A CN201410584476 A CN 201410584476A CN 104302083 A CN104302083 A CN 104302083A
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Abstract
The invention belongs to powder material modification devices and particularly relates to a streamlined powder material modification device for graft polymerization of low-temperature plasma under normal pressure. The streamlined powder material modification device comprises a hollow-cylinder-shaped dielectric barrier tube A, wherein a copper mesh is arranged in the middle in the dielectric barrier tube A, a copper bar penetrates through the upper portion of the dielectric barrier tube A and the copper mesh, and an active gas and powder inlet is formed in the bottom of the dielectric barrier tube A which is communicated with a hollow-cylinder-shaped dielectric barrier tube B through a connection tube. A copper mesh is arranged in the middle in the dielectric barrier tube B, a copper tube penetrates through the upper portion of the dielectric barrier tube B and the copper mesh, and a graft gas inlet is formed in the top of the dielectric barrier tube B. The streamlined powder material modification device has the advantages of being simple in structure and capable of overcoming the shortcomings of the surface treatment technology of an existing vacuum low-temperature plasma by adopting a normal pressure dielectric barrier discharge mode and having no need of expensive vacuum devices.
Description
Technical field
The invention belongs to a kind of powder body material reforming apparatus, be specifically related to a kind of atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus.
Background technology
Low temperature plasma, as a kind of method of modifying of new material surface, has the advantage that the high and reaction system of electron energy keeps low-temperature condition, does not destroy again material body feature, have the advantages such as efficiency is higher, treatment temperature is low, energy-saving and environmental protection.What plasma surface modification participation was reacted has free radical, excited state particle and ion etc., by surface action, may introduce particular functional group on surface, produces surface active and etching, generates surface free radical and surface functional group.Plasma graft refers to that material produces behind activated centre through Low Temperature Plasma Treating, contacts with functional monomer, utilizes the activated centre trigger monomer on surface and matrix surface to carry out graft polymerization reaction.
Current plasma graft generally adopts low pressure glow discharge form, but low pressure glow discharge needs expensive vacuum equipment, limits its application industrially, is difficult to realize streamlined operation.
Summary of the invention
The object of this invention is to provide a kind of atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus, it does not need vacuum equipment, and low cost of manufacture, convenient operation and industrialization process continuously.
The present invention realizes like this, atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus, it comprises the dielectric impedance pipe A of hollow tube-shape, middle part in dielectric impedance pipe A is provided with copper mesh, copper rod runs through dielectric impedance pipe A top and copper mesh, the bottom of dielectric impedance pipe A has activated gas and powder entrance, dielectric impedance pipe A is communicated with the dielectric impedance pipe B of hollow tube-shape by adapter, middle part in dielectric impedance pipe B is provided with copper mesh, copper pipe runs through dielectric impedance pipe B top and copper mesh, and the top of dielectric impedance pipe B has grafting gas access.
The side of described dielectric impedance pipe B is connected with adapter.
The bottom of described dielectric impedance pipe B is enclosed construction.
Advantage of the present invention is, structure is simple, adopts atmospheric dielectric barrier discharge form, overcomes the deficiency that existing vacuum low-temperature plasma process for treating surface exists, without the need to the vacuum equipment of costliness; Be equipped with air transporting arrangement, air, argon gas, helium etc. can be adopted as activated gas, with low cost, under the effect of air-flow, make powder fully be exposed in plasma, and whole workflow is carried out in a pipeline fashion, can carry out normal pressure process by powder, convenient operation and industrialization process continuously.
Accompanying drawing explanation
Fig. 1 is atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus schematic diagram provided by the present invention;
Fig. 2 is atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus schematic diagram.
In figure, 1 gas flowmeter; 2 powder feeders; 3 dielectric impedance pipe A; 4 dielectric impedance pipe B; 5 grafting raw materials; 6 low-temperature plasma activation districts; 7 low-temperature plasma graft districts; 8 dielectric impedance pipe A; 9 dielectric impedance pipe B; 10 copper rods; 11 copper mesh; 12 activated gas and powder entrance; 13 grafting gas accesses; 14 copper pipes.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail:
As shown in Figure 1, atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus, comprises low-temperature plasma activation district 6, low-temperature plasma graft district 7.Wherein, low-temperature plasma activation district comprises air transporting arrangement, metal electrode group (being made up of copper rod and copper mesh), dielectric impedance pipe A; Low-temperature plasma graft polymeric area comprises metal electrode group (being made up of copper rod and copper mesh) and dielectric impedance pipe B, and grafting gas passes into graft reaction district by copper pipe.
If when grafting raw material is liquid, grafting zone need be passed into by the copper pipe in dielectric impedance pipe again by after liquid gasification.
Atmospheric low-temperature plasma continuous-flow type powder body material reforming system adopts air, argon gas, helium etc. as activated gas, with low cost.
Atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus concrete structure is, it comprises the dielectric impedance pipe A8 of hollow tube-shape, middle part in dielectric impedance pipe A8 is provided with copper mesh 11, copper rod 10 runs through dielectric impedance pipe A8 top and copper mesh 11, the bottom of dielectric impedance pipe A8 has activated gas and powder entrance 12, dielectric impedance pipe A8 is communicated with the dielectric impedance pipe B9 of hollow tube-shape by adapter, middle part in dielectric impedance pipe B9 is provided with copper mesh 11, copper pipe 14 runs through dielectric impedance pipe B9 top and copper mesh 11, the top of dielectric impedance pipe B9 has grafting gas access 13, the side of dielectric impedance pipe B9 is connected with adapter, the bottom of dielectric impedance pipe B9 is enclosed construction.
Its course of work is: powder is constantly added by feeder, dielectric impedance pipe A is entered under airflow function, powder body material carries out low-temperature plasma activation in dielectric impedance pipe A, by adjustment throughput size, after making activation, powder flows to dielectric impedance pipe B with gas, in the plasma slab of dielectric impedance pipe B, complete graft polymerization reaction.Wherein grafting unstrpped gas is passed in dielectric impedance pipe B by copper pipe, and whole process belongs to continuous-flow type operation.
Embodiment 1: as shown in Figure 1, 2, the present embodiment comprises low-temperature plasma activation district and glycerol polymerization district.Region of activation is made up of air transporting arrangement, metal electrode group, dielectric impedance pipe A, activated gas adopts argon gas, dielectric impedance pipe A adopts columniform quartz glass tube, and in quartz glass tube, copper rod and the outer copper mesh of pipe form high-field electrode and the low-field electrode of metal electrode group; Glycerol polymerization district comprises metal electrode group and dielectric impedance pipe B, and dielectric impedance pipe B adopts columniform quartz glass tube, and in quartz glass tube, copper pipe and outside copper mesh form high-field electrode and the low-field electrode of metal electrode group; Grafting gas passes into graft reaction district by copper pipe, and powder enters graft reaction district with activated gas air-flow, under low temperature plasma effect, completes graft reaction.
Embodiment 2: the present embodiment comprises low-temperature plasma activation district and glycerol polymerization district.Region of activation is made up of air transporting arrangement, metal electrode group, dielectric impedance pipe A, activated gas adopts helium, dielectric impedance pipe A adopts columniform quartz glass tube, and in quartz glass tube, stainless steel bar and pipe outer copper skin form high-field electrode and the low-field electrode of metal electrode group; Glycerol polymerization district comprises metal electrode group and dielectric impedance pipe B, and dielectric impedance pipe B adopts columniform quartz glass tube, and in quartz glass tube, stainless steel tube and outside copper sheet form high-field electrode and the low-field electrode of metal electrode group; Grafting gas passes into graft reaction district by stainless steel tube, and powder enters graft reaction district with activated gas air-flow, under low temperature plasma effect, completes graft reaction.
Embodiment 3: the present embodiment comprises low-temperature plasma activation district and glycerol polymerization district.Region of activation is made up of air transporting arrangement, metal electrode group, dielectric impedance pipe A, and activated gas adopts air, and dielectric impedance pipe A adopts columniform earthenware, and in earthenware, stainless steel bar and the outer copper mesh of pipe form high-field electrode and the low-field electrode of metal electrode group; Glycerol polymerization district comprises metal electrode group and dielectric impedance pipe B, and dielectric impedance pipe B adopts columniform earthenware, and in earthenware, stainless steel tube and outside copper mesh form high-field electrode and the low-field electrode of metal electrode group; Grafting gas passes into graft reaction district by stainless steel tube, and powder enters graft reaction district with activated gas air-flow, under low temperature plasma effect, completes graft reaction.
The above; be only the specific embodiment of the present invention; but protection scope of the present invention is not limited thereto; any those of ordinary skill in the art are within the technical scope disclosed by the present invention; without the change of creative work or replacement, all should be able to be encompassed within protection scope of the present invention.Therefore, the protection range that protection scope of the present invention should limit with claims is as the criterion.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410584476.4A CN104302083B (en) | 2014-10-27 | 2014-10-27 | Streamlined powder material modification device for graft polymerization of low-temperature plasma under normal pressure |
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| CN201410584476.4A CN104302083B (en) | 2014-10-27 | 2014-10-27 | Streamlined powder material modification device for graft polymerization of low-temperature plasma under normal pressure |
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| CN104302083A true CN104302083A (en) | 2015-01-21 |
| CN104302083B CN104302083B (en) | 2017-01-25 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107548378A (en) * | 2015-02-27 | 2018-01-05 | 英默里斯石墨及活性炭瑞士有限公司 | The carbonaceous material that nano grain surface is modified and the method for producing the material |
| CN114192091A (en) * | 2021-12-10 | 2022-03-18 | 南京工业大学 | Plasma device system and method for surface modification of powder material |
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| JPH08506045A (en) * | 1992-12-03 | 1996-07-02 | プラズマカーブ・インコーポレイテツド | Equipment and processes for powder particle treatment for modifying the surface properties of individual particles |
| CN1778498A (en) * | 2005-09-30 | 2006-05-31 | 中国工程物理研究院激光聚变研究中心 | Method and device for preparing organic coated metal nano powder |
| CN1832655A (en) * | 2005-03-09 | 2006-09-13 | 中国科学院电工研究所 | A coaxial low temperature plasma material processor |
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| DE102010016926A1 (en) * | 2009-05-16 | 2010-12-30 | Eichler Gmbh & Co.Kg | Electrostatic lacquering of electrically non-conductive parts e.g. plastic-, glass- or ceramic parts by surface conductivity-producing layers, comprises dryly coating non-conductive parts with metal conducting and semi-conducting layers |
| CN204231738U (en) * | 2014-10-27 | 2015-03-25 | 核工业西南物理研究院 | Atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus |
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2014
- 2014-10-27 CN CN201410584476.4A patent/CN104302083B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH08506045A (en) * | 1992-12-03 | 1996-07-02 | プラズマカーブ・インコーポレイテツド | Equipment and processes for powder particle treatment for modifying the surface properties of individual particles |
| CN1832655A (en) * | 2005-03-09 | 2006-09-13 | 中国科学院电工研究所 | A coaxial low temperature plasma material processor |
| CN1778498A (en) * | 2005-09-30 | 2006-05-31 | 中国工程物理研究院激光聚变研究中心 | Method and device for preparing organic coated metal nano powder |
| CN101573467A (en) * | 2006-07-31 | 2009-11-04 | 泰克纳等离子系统公司 | Plasma surface treatment using dielectric barrier discharges |
| DE102010016926A1 (en) * | 2009-05-16 | 2010-12-30 | Eichler Gmbh & Co.Kg | Electrostatic lacquering of electrically non-conductive parts e.g. plastic-, glass- or ceramic parts by surface conductivity-producing layers, comprises dryly coating non-conductive parts with metal conducting and semi-conducting layers |
| CN204231738U (en) * | 2014-10-27 | 2015-03-25 | 核工业西南物理研究院 | Atmospheric low-temperature plasma glycerol polymerization continuous-flow type powder body material reforming apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107548378A (en) * | 2015-02-27 | 2018-01-05 | 英默里斯石墨及活性炭瑞士有限公司 | The carbonaceous material that nano grain surface is modified and the method for producing the material |
| CN114192091A (en) * | 2021-12-10 | 2022-03-18 | 南京工业大学 | Plasma device system and method for surface modification of powder material |
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| CN104302083B (en) | 2017-01-25 |
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