CN104282604A - Graphite boat piece for double-faced film coating and graphite boat - Google Patents
Graphite boat piece for double-faced film coating and graphite boat Download PDFInfo
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- CN104282604A CN104282604A CN201410582768.4A CN201410582768A CN104282604A CN 104282604 A CN104282604 A CN 104282604A CN 201410582768 A CN201410582768 A CN 201410582768A CN 104282604 A CN104282604 A CN 104282604A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 110
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 110
- 239000010439 graphite Substances 0.000 title claims abstract description 110
- 239000007888 film coating Substances 0.000 title 1
- 238000009501 film coating Methods 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 143
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 142
- 239000010703 silicon Substances 0.000 claims abstract description 142
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009776 industrial production Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 67
- 239000000919 ceramic Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
本发明提供了一种用于双面镀膜的石墨舟片，所述石墨舟片设置有镂空硅片位；所述镂空硅片位边缘设置有硅片卡件。本发明还提供了一种用于双模镀膜的石墨舟，包括多片上述技术方案所述的石墨舟片。本发明提供的石墨舟包括的石墨片上设置有镂空的硅片位，通过镂空硅片位边缘设置的硅片卡件将待镀膜的硅片卡在硅片位上，从而在镀膜时实现硅片的双面镀膜。而且，本发明提供的石墨舟与传统的太阳能电池生产线兼容，适合大规模工业生产。
The invention provides a graphite boat for double-sided coating, the graphite boat is provided with a hollowed-out silicon chip position; the edge of the hollowed-out silicon chip position is provided with a silicon chip clip. The present invention also provides a graphite boat for dual-mode coating, comprising multiple pieces of the graphite boat described in the technical solution above. The graphite sheet included in the graphite boat provided by the present invention is provided with a hollowed-out silicon wafer position, and the silicon wafer to be coated is clamped on the silicon wafer position by the silicon wafer clip provided on the edge of the hollowed-out silicon wafer position, so that the silicon wafer can be fully coated during coating. double-sided coating. Moreover, the graphite boat provided by the invention is compatible with traditional solar cell production lines and is suitable for large-scale industrial production.
Description
技术领域technical field
本发明涉及太阳能电池镀膜技术领域，尤其涉及一种用于双面镀膜的石墨舟。The invention relates to the technical field of solar cell coating, in particular to a graphite boat used for double-sided coating.
背景技术Background technique
太阳能硅片的生产加工中有一道工序叫做等离子增强化学气相沉积(PECVD)镀膜，其作用是提高硅片的太阳能转化率。这个工序就用到石墨舟。把硅片放到石墨舟中，通过等离子化学气相沉积，在骨片表面沉积一层深蓝色氮化硅膜。There is a process in the production and processing of solar silicon wafers called plasma enhanced chemical vapor deposition (PECVD) coating, which is used to improve the solar energy conversion rate of silicon wafers. This process uses graphite boats. Put the silicon slice into the graphite boat, and deposit a dark blue silicon nitride film on the surface of the bone slice by plasma chemical vapor deposition.
石墨舟是给太阳能电池片中的硅片镀膜的载体，其结构和大小直接影响硅片的转换效率和生产效率。目前，石墨舟均包括间隔设置的若干第一石墨舟片、第二石墨舟片、陶瓷套、陶瓷杆、石墨杆、石墨螺母、第一连接块和第二连接块；第一石墨舟片的结构和第二石墨舟片的结构相同，第一石墨舟片一端的下部和中部分别设置有第一接线凸耳，第二石墨舟片另一端的下部和中部分别设置有第二接线凸耳；陶瓷套设置在第一石墨舟片和第二石墨舟片之间，再通过陶瓷杆穿过若干第一石墨舟片、第二石墨舟片和陶瓷套与石墨螺母配合将若干第一石墨舟片、第二石墨舟片和陶瓷套固定；第一连接块设置在相邻两第一接线凸耳之间，再通过陶瓷杆、石墨杆穿过若干第一接线凸耳和第一连接块与石墨螺母配合将若干第一石墨舟片和第一连接块固定；第二连接块设置在相邻两第二接线凸耳之间，再通过陶瓷杆、石墨杆穿过若干第二接线凸耳和二连接块与石墨螺母配合将若干第二石墨舟片和第二连接块固定。The graphite boat is the carrier for coating the silicon wafer in the solar cell, and its structure and size directly affect the conversion efficiency and production efficiency of the silicon wafer. At present, graphite boats all include some first graphite boat sheets, second graphite boat sheets, ceramic sleeves, ceramic rods, graphite rods, graphite nuts, first connecting blocks and second connecting blocks set at intervals; the first graphite boat sheets The structure is the same as that of the second graphite boat, the bottom and middle of one end of the first graphite boat are respectively provided with first connection lugs, and the bottom and middle of the other end of the second graphite boat are respectively provided with second connection lugs; The ceramic sleeve is arranged between the first graphite boat and the second graphite boat, and the ceramic rod passes through some first graphite boats, second graphite boats and ceramic sleeves and graphite nuts to fit several first graphite boats , the second graphite boat and the ceramic sleeve are fixed; the first connection block is arranged between two adjacent first connection lugs, and then the ceramic rod and the graphite rod pass through several first connection lugs and the first connection block and graphite Nuts cooperate to fix some of the first graphite boats and the first connecting block; the second connecting block is arranged between the adjacent two second connecting lugs, and then pass through several second connecting lugs and the second connecting lugs through ceramic rods and graphite rods. The connecting block cooperates with the graphite nut to fix the second graphite boats and the second connecting block.
在采用上述石墨舟对硅片进行镀膜时，每个硅片位的硅片通常是背靠背装片，石墨舟片间接入射频电源，硅片作为电极的一部分，两舟片间通过射频放电形成等离子体，使硅片上沉积上减反射膜。现有技术公开的石墨舟在镀膜时只在硅片一面镀上了钝化膜或减反膜，不利于其推广应用。When the above-mentioned graphite boats are used to coat silicon wafers, the silicon wafers at each silicon wafer position are usually loaded back to back, and the graphite boats are connected to a radio frequency power supply, and the silicon wafers are used as a part of the electrode. Body, so that the anti-reflection coating is deposited on the silicon wafer. The graphite boat disclosed in the prior art is only coated with a passivation film or an anti-reflection film on one side of the silicon wafer during coating, which is not conducive to its popularization and application.
发明内容Contents of the invention
本发明的目的在于提供一种用于双面镀膜的石墨舟，本发明提供的石墨舟能够对硅片进行双面镀膜。The object of the present invention is to provide a graphite boat for double-sided coating, and the graphite boat provided by the present invention can perform double-sided coating on silicon wafers.
本发明提供了一种用于双面镀膜的石墨舟片，所述石墨舟片设置有镂空硅片位；The invention provides a graphite boat for double-sided coating, the graphite boat is provided with a hollowed-out silicon chip position;
所述镂空硅片位边缘设置有硅片卡件。The edge of the hollowed-out silicon wafer is provided with a silicon wafer clip.
优选的，每个镂空硅片位上设置2个～5个硅片卡件。Preferably, 2 to 5 silicon wafer clips are arranged on each hollow silicon wafer position.
优选的，所述镂空硅片位为四边形；Preferably, the hollowed-out silicon chip is quadrilateral;
所述四边形的镂空硅片位的四个侧边中至少1个不设置硅片卡件。At least one of the four sides of the quadrilateral hollow silicon wafer position is not provided with a silicon wafer clamp.
优选的，所述硅片卡件为V型。Preferably, the silicon chip clip is V-shaped.
优选的，所述硅片卡件包括第一卡面和第二卡面；Preferably, the silicon chip card includes a first card surface and a second card surface;
所述第一卡面的一端和第二卡面的一端相接构成V型硅片卡件。One end of the first card surface is connected to one end of the second card surface to form a V-shaped silicon chip card.
优选的，所述镂空硅片位的尺寸大于待镀膜的硅片。Preferably, the size of the hollow silicon wafer is larger than that of the silicon wafer to be coated.
优选的，所述石墨舟片的长度为1000mm～1500mm；Preferably, the length of the graphite boat is 1000mm-1500mm;
所述石墨舟片上的镂空硅片位为3个～10个。There are 3-10 hollowed-out silicon wafer positions on the graphite boat.
优选的，所述石墨舟片的长度为1100mm～1300mm。Preferably, the length of the graphite boat is 1100mm-1300mm.
本发明提供了一种用于双面镀膜的石墨舟，包括多片上述技术方案所述的石墨舟片。The present invention provides a graphite boat for double-sided coating, which comprises a plurality of graphite boat sheets described in the above technical solution.
优选的，所述石墨舟片的片数为11片～21片。Preferably, the number of graphite boat sheets is 11-21.
本发明提供了一种用于双面镀膜的石墨舟片，所述石墨舟片设置有镂空硅片位；所述镂空硅片位边缘设置有硅片卡件。本发明还提供了一种用于双模镀膜的石墨舟，包括多片上述技术方案所述的石墨舟片。本发明提供的石墨舟包括的石墨片上设置有镂空的硅片位，通过镂空硅片位边缘设置的硅片卡件将待镀膜的硅片卡在硅片位上，从而在一次镀膜的进程中，实现硅片的双面镀膜。而且，本发明提供的石墨舟与传统的太阳能电池生产线兼容，适合大规模工业生产。The invention provides a graphite boat for double-sided coating, the graphite boat is provided with a hollowed-out silicon chip position; the edge of the hollowed-out silicon chip position is provided with a silicon chip clip. The present invention also provides a graphite boat for dual-mode coating, comprising multiple pieces of the graphite boat described in the technical solution above. The graphite sheet included in the graphite boat provided by the present invention is provided with a hollowed-out silicon wafer position, and the silicon wafer to be coated is clamped on the silicon wafer position by the silicon wafer clip provided on the edge of the hollowed-out silicon wafer position, so that in the process of one coating , to achieve double-sided coating of silicon wafers. Moreover, the graphite boat provided by the invention is compatible with traditional solar cell production lines and is suitable for large-scale industrial production.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. Those skilled in the art can also obtain other drawings based on these drawings without creative work.
图1为本发明实施例中硅片卡件的结构示意图；Fig. 1 is the schematic structural view of the silicon chip clip in the embodiment of the present invention;
图2为本发明实施例中硅片位边缘设置有3个硅片卡件的石墨舟片结构示意图；Fig. 2 is the graphite boat sheet structure schematic diagram that is provided with 3 silicon chip clips on the edge of silicon chip position in the embodiment of the present invention;
图3为本发明实施例中硅片位边缘设置有4个硅片卡件的石墨舟片结构示意图；Fig. 3 is the graphite boat sheet structure schematic diagram that is provided with 4 silicon chip fasteners on the edge of the silicon chip position in the embodiment of the present invention;
图4为本发明实施例中石墨舟的正视图。Fig. 4 is the front view of the graphite boat in the embodiment of the present invention.
具体实施方式Detailed ways
为了使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步的详细说明。In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
本发明提供了一种用于双面镀膜的石墨舟片，所述石墨舟片设置有镂空硅片位；The invention provides a graphite boat for double-sided coating, the graphite boat is provided with a hollowed-out silicon chip position;
所述镂空硅片位边缘设置有硅片卡件。The edge of the hollowed-out silicon wafer is provided with a silicon wafer clip.
本发明提供的石墨舟片设置有镂空硅片位，通过所述镂空硅片位边缘的硅片卡件将待镀膜的硅片固定在石墨舟片上，在对硅片进行镀膜时，可同时对硅片的双面进行镀膜，得到双模镀膜的硅片。The graphite boat provided by the present invention is provided with a hollowed-out silicon chip position, and the silicon chip to be coated is fixed on the graphite boat by the silicon chip clamp on the edge of the hollowed-out silicon chip, and when the silicon chip is coated, the silicon chip can be simultaneously Coating is performed on both sides of the silicon wafer to obtain a dual-mode coated silicon wafer.
本发明提供的用于双面镀膜的石墨舟片上设置有镂空硅片位。本发明对所述石墨舟片的尺寸、材质、形状等没有特殊的限制，采用本领域技术人员熟知的石墨舟片即可。与现有技术不同的是，本发明在石墨舟片上设置了镂空的硅片位。在本发明中，所述石墨舟片的长度优选为1000mm～1500mm，更优选为1100mm～1300mm，最优选为1196mm。The graphite boat used for double-sided coating provided by the present invention is provided with hollow silicon wafer positions. The present invention has no special restrictions on the size, material, shape, etc. of the graphite boat, and the graphite boat well-known to those skilled in the art can be used. Different from the prior art, the present invention sets hollow silicon wafer positions on the graphite boat. In the present invention, the length of the graphite boat is preferably 1000mm-1500mm, more preferably 1100mm-1300mm, most preferably 1196mm.
本发明对每片石墨舟片上镂空硅片位的数量没有特殊的限制，本领域技术人员可根据生产需要，设置合适数量的硅片位。在本发明中，每片石墨舟片上镂空硅片位的数量优选为3个～10个，更优选为4个～7个。在本发明的实施例中，每片石墨舟片上可设置4个、5个、6个或7个镂空硅片位。本发明对相邻镂空硅片位的间隔距离也没有特殊的限制，本领域技术人员可跟设置任意的间隔距离。在本发明的实施例中，每片石墨舟片上的口空硅片位平均分布。The present invention has no special limitation on the number of hollow silicon wafer positions on each graphite boat, and those skilled in the art can set an appropriate number of silicon wafer positions according to production needs. In the present invention, the number of hollow silicon wafer positions on each graphite boat is preferably 3-10, more preferably 4-7. In the embodiment of the present invention, 4, 5, 6 or 7 hollowed-out silicon wafer positions can be set on each graphite boat. The present invention has no special limitation on the distance between adjacent hollow silicon wafers, and those skilled in the art can set any distance between them. In the embodiment of the present invention, the hollow silicon wafers on each graphite boat are evenly distributed.
本发明对所述镂空硅片位的形状没有特殊的限制，本领域技术人员可根据待镀膜硅片的形状，设置与所述待镀膜硅片形状相适应的镂空硅片位。在本发明的实施例中，所述镂空硅片位可以为四边形。在本发明中，为了能够对待镀膜的硅片全方位镀膜，所述镂空硅片位的尺寸优选大于待镀膜硅片。The present invention has no special limitation on the shape of the hollow silicon wafer. Those skilled in the art can set the hollow silicon wafer suitable for the shape of the silicon wafer to be coated according to the shape of the silicon wafer to be coated. In an embodiment of the present invention, the hollow silicon chip position may be a quadrangle. In the present invention, in order to be able to coat the silicon wafer to be coated in all directions, the size of the hollow silicon wafer is preferably larger than the silicon wafer to be coated.
在本发明中，所述镂空硅片位的边缘设置有硅片卡件，用于将待镀膜硅片固定在石墨舟片上。In the present invention, the edge of the hollowed-out silicon wafer position is provided with a silicon wafer clip for fixing the silicon wafer to be coated on the graphite boat.
参见图1，图1为本发明实施例中硅片卡件的结构示意图。Referring to FIG. 1 , FIG. 1 is a schematic structural diagram of a silicon card in an embodiment of the present invention.
在本发明中，所述硅片卡件优选为V型。具体的，所述硅片卡件包括第一卡面和第二卡面，所述第一卡面的一端与第二卡面的一端相接形成V型硅片卡件。在本发明中，所述第一卡面和第二卡面相接的部位与所述镂空硅片位边缘相接，用于将硅片卡件固定在镂空硅片位边缘；所述第一卡面和第二卡面的开口处用于放置待镀膜的硅片。本发明对所述第一卡面和第二卡面开口处的距离没有特殊的限制，能够将待镀膜硅片固定住即可。In the present invention, the silicon chip clip is preferably V-shaped. Specifically, the silicon chip card includes a first card surface and a second card surface, and one end of the first card surface is connected with one end of the second card surface to form a V-shaped silicon chip card. In the present invention, the part where the first card face and the second card face meet is in contact with the edge of the hollowed-out silicon chip, and is used to fix the silicon chip clip on the edge of the hollowed-out silicon chip; the first The openings of the card surface and the second card surface are used for placing silicon wafers to be coated. The present invention has no special limitation on the distance between the openings of the first card surface and the second card surface, as long as the silicon wafer to be coated can be fixed.
本发明对每个镂空硅片位边缘设置的硅片卡件的数量没有特殊的限制，能够将硅片固定即可。在本发明中，每个镂空硅片位上优选设置2个～5个硅片可见，更优选为3个～4个。The present invention has no special limitation on the number of silicon chip clips arranged on the edge of each hollow silicon chip, as long as the silicon chips can be fixed. In the present invention, preferably 2-5 silicon wafers are arranged on each hollow silicon wafer position, more preferably 3-4 wafers.
本发明对硅片卡件在镂空硅片位边缘设置的位置没有特殊的限制，能够将硅片固定即可。在本发明的实施例中，当所述镂空硅片位为四边形时，所述镂空硅片位的四个侧边上至少有1个侧边上不设置硅片卡件，用于将待镀膜硅片插入硅片卡件中。在本发明的实施例中，所述四边形的镂空硅片位的四个侧边中，可以有1个侧边不设置硅片卡件，也可以2个侧边不设置硅片卡件。The present invention has no special limitation on the position of the silicon chip clip on the edge of the hollow silicon chip, as long as the silicon chip can be fixed. In an embodiment of the present invention, when the hollowed-out silicon wafer position is quadrilateral, at least one of the four sides of the hollowed-out silicon wafer position is not provided with a silicon wafer clamping member for placing the film to be coated. The silicon chip is inserted into the silicon chip card. In an embodiment of the present invention, among the four sides of the quadrilateral hollowed-out silicon wafer position, one side may not be provided with a silicon wafer clamp, and two sides may not be provided with a silicon wafer clamp.
具体的，当所述硅片卡件为2个时，可以设置在镂空硅片位相对的两个侧边边缘；当所述硅片卡件为3个时，可以将3个硅片卡件设置在镂空硅片位的三个侧边的边缘，每个侧边的边缘设置1个；当所述硅片卡件为4个时，所述4个硅片卡件设置在镂空硅片位的三个侧边的边缘，在所述三个侧边中，相对的两个侧边中的每个侧边设置1个硅片卡件，余下的一个侧边设置2个硅片卡件。Specifically, when there are two silicon chip clips, they can be arranged on the two side edges opposite to the hollowed out silicon chip; when there are three silicon chip clips, the three silicon chip clips can be Set on the edges of the three sides of the hollowed-out silicon wafer position, and set one on the edge of each side; when there are 4 silicon wafer clamps, the 4 silicon wafer clamps are arranged at the hollowed-out silicon wafer position Among the three sides, one silicon wafer clip is provided on each of the two opposite sides, and two silicon wafer clips are provided on the remaining side.
参见图2和图3，图2为本发明实施例中硅片位边缘设置有3个硅片卡件的石墨舟片结构示意图。其中1为镂空硅片位，2为第一硅片卡件，3为第二硅片卡件，4为第二硅片卡件；Referring to Fig. 2 and Fig. 3, Fig. 2 is a schematic diagram of the structure of a graphite boat with three silicon chip clips arranged on the edge of the silicon chip in the embodiment of the present invention. Among them, 1 is the hollow silicon chip position, 2 is the first silicon chip clip, 3 is the second silicon chip clip, and 4 is the second silicon chip clip;
图3为本发明实施例中硅片位边缘设置有4个硅片卡件的石墨舟片的结构示意图，其中5为镂空硅片位，6为第三硅片卡件，7为第四硅片卡件，8为第五硅片卡件，9为第六硅片卡件。Fig. 3 is the schematic structural representation of the graphite boat that is provided with 4 silicon chip clips on the edge of the silicon chip in the embodiment of the present invention, wherein 5 is the hollowed out silicon chip, 6 is the third silicon chip clip, and 7 is the fourth silicon chip. Chip cards, 8 is the fifth silicon chip card, and 9 is the sixth silicon chip card.
本发明还提供了一种用于双面镀膜的石墨舟，包括多片上述技术方案所述的石墨舟片。本发明对所述多片石墨舟片之间的连接方式没有特殊的限制，按照本领域技术人员熟知的现有技术中石墨舟片的设置方式即可。在本发明中，所述石墨舟包括的石墨舟片数可以为11片～21片。在本发明的实施例提供的石墨舟中，所述石墨舟片的片数可以为11片、12片、13片、14片、15片、16片、17片、18片、19片、20片或21片。The present invention also provides a graphite boat for double-sided coating, which includes a plurality of graphite boat sheets described in the above technical solution. In the present invention, there is no special limitation on the connection method between the plurality of graphite boats, and the arrangement method of the graphite boats in the prior art well known to those skilled in the art can be used. In the present invention, the number of graphite boat sheets included in the graphite boat may be 11 to 21 pieces. In the graphite boat provided in the embodiments of the present invention, the number of sheets of the graphite boat can be 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 tablets or 21 tablets.
在本发明中，所述石墨舟中，相邻石墨舟片之间的垂直距离优选为10mm～20mm，更优选为13mm～18mm，最优选为15mm。In the present invention, in the graphite boat, the vertical distance between adjacent graphite boat sheets is preferably 10mm-20mm, more preferably 13mm-18mm, most preferably 15mm.
在本发明中，所述石墨舟包括的石墨舟片中，设置在外侧的两片石墨舟片为实心。In the present invention, among the graphite boat sheets included in the graphite boat, the two graphite boat sheets arranged on the outside are solid.
参见图4，图4为本发明实施例提供的石墨舟的正视图。图4中，10为设置有镂空硅片位的石墨舟片，11为第一外侧石墨舟片，12为第二外侧石墨舟片。图4提供的石墨舟包括17片设置有镂空硅片位的石墨舟片和2片实心石墨舟片。Referring to Fig. 4, Fig. 4 is a front view of the graphite boat provided by the embodiment of the present invention. Among Fig. 4, 10 is the graphite boat that is provided with the hollowed-out silicon wafer position, 11 is the first outer graphite boat, and 12 is the second outer graphite boat. The graphite boat provided in Fig. 4 includes 17 graphite boats provided with hollow silicon wafer positions and 2 solid graphite boats.
对所公开的实施例的上述说明，使本领域专业技术人员能够实现或使用本发明。对这些实施例的多种修改对本领域的专业技术人员来说将是显而易见的，本文中所定义的一般原理可以在不脱离本发明的精神或范围的情况下，在其它实施例中实现。因此，本发明将不会被限制于本文所示的这些实施例，而是要符合与本文所公开的原理和新颖特点相一致的最宽的范围。The above description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the invention. Therefore, the present invention will not be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410582768.4A CN104282604A (en) | 2014-10-27 | 2014-10-27 | Graphite boat piece for double-faced film coating and graphite boat |
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| CN201410582768.4A CN104282604A (en) | 2014-10-27 | 2014-10-27 | Graphite boat piece for double-faced film coating and graphite boat |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420692A (en) * | 2015-12-29 | 2016-03-23 | 常州比太科技有限公司 | Silicon slice support plate for lower film coating |
| CN109680265A (en) * | 2018-12-25 | 2019-04-26 | 浙江晶科能源有限公司 | A kind of graphite boat and preparation method thereof |
| CN111223776A (en) * | 2018-11-23 | 2020-06-02 | 隆基乐叶光伏科技有限公司 | Method and device for coating crystalline silicon wafer |
-
2014
- 2014-10-27 CN CN201410582768.4A patent/CN104282604A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105420692A (en) * | 2015-12-29 | 2016-03-23 | 常州比太科技有限公司 | Silicon slice support plate for lower film coating |
| CN111223776A (en) * | 2018-11-23 | 2020-06-02 | 隆基乐叶光伏科技有限公司 | Method and device for coating crystalline silicon wafer |
| CN109680265A (en) * | 2018-12-25 | 2019-04-26 | 浙江晶科能源有限公司 | A kind of graphite boat and preparation method thereof |
| CN109680265B (en) * | 2018-12-25 | 2020-10-02 | 浙江晶科能源有限公司 | A kind of graphite boat and its making method |
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Application publication date: 20150114 |