CN104282545A - Wafer grinding device - Google Patents
Wafer grinding device Download PDFInfo
- Publication number
- CN104282545A CN104282545A CN201410546452.XA CN201410546452A CN104282545A CN 104282545 A CN104282545 A CN 104282545A CN 201410546452 A CN201410546452 A CN 201410546452A CN 104282545 A CN104282545 A CN 104282545A
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- CN
- China
- Prior art keywords
- wafer
- plastic film
- grinding method
- template
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a wafer grinding device. A wafer with a micro concave shape or a micro convex shape or other shapes can be ground through a plastic thin film, and the requirements for special technologies of some customers are met. The cost of the selected plastic thin film is low, production and operation are easy, and the wafer grinding device is suitable for industrial production. Meanwhile, the concave and convex degree of the wafer can be changed by selecting different shapes and different numbers of plastic thin films according to different requirements of the customers, and great flexibility is achieved.
Description
Technical field
The present invention relates to processing technology of semiconductor wafer field, relate to a kind of wafer grinding method specifically.
Background technology
The many employings of rear road production and processing " mechanical lapping+chemico-mechanical polishing (the CMP) " technique of current conventional semiconductor wafers, be attached between ceramic disk and wafer by wafer template and carry out grinding and polishing, wafer surface evenness after the method machines is generally within 5 microns, the highs and lows of wafer is all at Waffer edge, and both all depart from center wafer.And along with the development of the long epitaxy technology of semicon industry backing material, more and more higher to the requirement of substrate wafer.Some specific long epitaxy technique, require that the thickness at substrate wafer interarea center is higher or lower than the several micron of surrounding, namely wafer interarea is dimpling or nick shape.
For requiring in some enterprise's special process that wafer ad-hoc location is the production technology of nick or dimpling, said method is also inapplicable, therefore needs badly and on the basis of existing technique, designs a kind of new technology, to solve the problem.
Summary of the invention
The present invention aims to provide a kind of wafer grinding method for having the special shape such as nick or dimpling.
For solving the problems of the technologies described above, technical scheme of the present invention is:
A kind of wafer grinding method, comprises the steps:
S1: n layer thickness is covered on ceramic disk at micron-sized plastic film, wherein n be greater than or equal to 1 integer, described plastic film is circular;
S2: stick wafer template centered by the center of circle of described plastic film;
S3: be attached to by wafer in described wafer template, carries out grinding and polishing, and wherein said wafer template is equal with the diameter of described wafer.
Preferably, described plastic film is circular plastic film, and the diameter of described circular plastic film is less than the diameter of described wafer.
Preferably, described plastic film is annular plastics film, and the race diameter of described annular plastics film equals the diameter of described wafer.
Preferably, described plastic film is sealed polyethylene plastic.
Preferably, specifically comprise in described step S3 and wafer is attached in described wafer template, carry out hand lapping and mechanical polishing.
Preferably, specifically comprise in described step S3 and wafer is attached in described wafer template, carry out mechanical lapping and mechanical polishing.
Preferably, the thickness of plastic film described in each is 3-8 micron.
Preferably, the thickness of plastic film described in each is 4 microns.
Adopt technique scheme, the present invention at least comprises following beneficial effect:
Wafer grinding method of the present invention, can grind out the wafer with the special shape such as nick or dimpling by the use of plastic film, meet the special process demand of some client.And the cost of described plastic film is extremely low, production operation is simple, is suitable for industrial production.The plastic film with difformity and quantity can be selected to change the concavo-convex degree of wafer according to the different demands of client simultaneously, there is greatly flexibility.
Accompanying drawing explanation
Fig. 1 is the flow chart of wafer grinding method of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further described.
As shown in Figure 1, be a kind of wafer grinding method according to the invention, comprise the steps:
S1: n layer thickness is covered on ceramic disk at micron-sized plastic film, wherein n be greater than or equal to 1 integer, described plastic film is circular;
S2: stick wafer template centered by the center of circle of described plastic film;
S3: be attached to by wafer in described wafer template, carries out grinding and polishing, and wherein said wafer template is equal with the diameter of described wafer.
The wafer grinding that the present embodiment carries out mainly for the special process demand of some client, it is nick or dimpling shape that special process demand comprises wafer ad-hoc location.After the Ginding process described in the present embodiment, obtain described wafer surface is minute surface, and namely surface smoothness is very good.But the center due to described wafer is lined with n (n >=1) layer plastic film, described center wafer can present dimpling shape or nick shape or other shapes.Then by described wafer from after described wafer template is taken off, the center of described wafer is due to the elastically-deformable recovery of microcosmic, and wafer surface can present the given shape that client needs.
Described plastic film is circular plastic film in a preferred embodiment, and the diameter of described circular plastic film is less than the diameter of described wafer.Wafer surface after polishing is minute surface, and surface smoothness is very good, and the center due to described wafer is lined with n (n >=1) layer circular plastic film, and described center wafer is dimpling shape.By described wafer from after described wafer template is taken off, described center wafer is due to the elastically-deformable recovery of microcosmic, and the surface of described wafer is nick shape.
Described plastic film is annular plastics film in another preferred embodiment, and the race diameter of described annular plastics film equals the diameter of described wafer.Wafer surface after polishing is minute surface, and surface smoothness is very good, and the center due to described wafer is lined with n (n >=1) layer annular plastics film, and described center wafer is nick shape.By described wafer from after described wafer template is taken off, described center wafer is due to the elastically-deformable recovery of microcosmic, and the surface of described wafer is dimpling shape.
Certain described plastic film can also be customized to other shapes, to meet the particular/special requirement of client to wafer specific position.Shape due to described plastic film is customized to prior art means, and those skilled in the art can be known, so place repeats no more.
Described plastic film is preferably sealed polyethylene plastic, more preferably adopts the LDPE: Low-density polyethylene plastics film that casting technique is made.Sealed polyethylene plastic is a kind of translucent, glossy, film that quality is more soft, has excellent chemical stability, heat sealability, resistance to water and moisture resistance.And the LDPE: Low-density polyethylene plastics film that casting technique is made not only has These characteristics, there is the advantages such as thickness is even, price is lower simultaneously.Itself thickness evenly effectively can control the precision of wafer concaveconvex shape, and its price is lower can reduce integral production cost.
Preferably, specifically comprise in described step S3 and wafer is attached in described wafer template, carry out hand lapping and mechanical polishing.Carry out grinding by manual mode can ensure to add in small lot to use man-hour.Its wafer quality processed is more meticulous.Processing mode due to described hand lapping and mechanical polishing is the routine techniques means of those skilled in the art, so place repeats no more.
Preferably, specifically comprise in described step S3 and wafer is attached in described wafer template, carry out mechanical lapping and mechanical polishing.Can obtain the wafer with given shape in batches by mechanical lapping and mechanical polishing, production efficiency is high, and cost is low.Processing mode due to described mechanical lapping and mechanical polishing is the routine techniques means of those skilled in the art, so place repeats no more.
Preferably, the thickness of plastic film described in each is 3-8 micron.More preferably, the thickness of plastic film described in each is 4 microns.Those skilled in the art can select the plastic film of different-thickness and the number of plies of plastic film according to the user demand of reality, improve the concavo-convex degree of described wafer.
Wafer grinding method of the present invention, can grind out the wafer with the special shape such as nick or dimpling by the use of plastic film, meet the special process demand of some client.And the cost of described plastic film is extremely low, production operation is simple, is suitable for industrial production.The plastic film with difformity and quantity can be selected to change the concavo-convex degree of wafer according to the different demands of client simultaneously, there is greatly flexibility.
Above embodiments of the invention have been described in detail, but described content being only the preferred embodiment of the invention, can not being considered to for limiting practical range of the present invention.All any equivalent variations done according to the present patent application scope, all should still be within patent covering scope of the present invention.
Claims (8)
1. a wafer grinding method, is characterized in that, comprises the steps:
S1: n layer thickness is covered on ceramic disk at micron-sized plastic film, wherein n be greater than or equal to 1 integer, described plastic film is circular;
S2: stick wafer template centered by the center of circle of described plastic film;
S3: be attached to by wafer in described wafer template, carries out grinding and polishing, and wherein said wafer template is equal with the diameter of described wafer.
2. wafer grinding method as claimed in claim 1, it is characterized in that: described plastic film is circular plastic film, the diameter of described circular plastic film is less than the diameter of described wafer.
3. wafer grinding method as claimed in claim 1, it is characterized in that: described plastic film is annular plastics film, the race diameter of described annular plastics film equals the diameter of described wafer.
4. the wafer grinding method as described in as arbitrary in claim 1-3, is characterized in that: described plastic film is sealed polyethylene plastic.
5. the wafer grinding method as described in as arbitrary in claim 1-4, is characterized in that: specifically comprise in described step S3 and being attached in described wafer template by wafer, carry out hand lapping and mechanical polishing.
6. the wafer grinding method as described in as arbitrary in claim 1-4, is characterized in that: specifically comprise in described step S3 and being attached in described wafer template by wafer, carry out mechanical lapping and mechanical polishing.
7. the wafer grinding method as described in as arbitrary in claim 1-6, is characterized in that: the thickness of plastic film described in each is 3-8 micron.
8. the wafer grinding method as described in as arbitrary in claim 1-7, is characterized in that: the thickness of plastic film described in each is 4 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410546452.XA CN104282545A (en) | 2014-10-15 | 2014-10-15 | Wafer grinding device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410546452.XA CN104282545A (en) | 2014-10-15 | 2014-10-15 | Wafer grinding device |
Publications (1)
| Publication Number | Publication Date |
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| CN104282545A true CN104282545A (en) | 2015-01-14 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410546452.XA Pending CN104282545A (en) | 2014-10-15 | 2014-10-15 | Wafer grinding device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05114593A (en) * | 1991-10-23 | 1993-05-07 | Fujitsu Ltd | Grinding method of semiconductor wafer |
| JP2004128115A (en) * | 2002-10-01 | 2004-04-22 | Hitachi Chem Co Ltd | Decompression fixing film, wafer protection film, dicing film, and manufacturing method of semiconductor device |
| CN1986154A (en) * | 2005-12-20 | 2007-06-27 | 希特隆股份有限公司 | Silicon wafer grinding apparatus, retaining assembly, and silicon wafer flatness correcting method |
| CN101465292A (en) * | 2007-12-21 | 2009-06-24 | 株式会社迪思科 | Resin covering method and apparatus |
| EP2246878A1 (en) * | 2009-04-30 | 2010-11-03 | Shin-Etsu Chemical Co., Ltd. | Method for preparing soi substrate having backside sandblasted |
| CN101964306A (en) * | 2009-07-23 | 2011-02-02 | 株式会社迪思科 | Wafer grinding method and protection belt |
| CN103702798A (en) * | 2011-06-21 | 2014-04-02 | 信越半导体株式会社 | Polishing head, polishing device, and workpiece polishing method |
-
2014
- 2014-10-15 CN CN201410546452.XA patent/CN104282545A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05114593A (en) * | 1991-10-23 | 1993-05-07 | Fujitsu Ltd | Grinding method of semiconductor wafer |
| JP2004128115A (en) * | 2002-10-01 | 2004-04-22 | Hitachi Chem Co Ltd | Decompression fixing film, wafer protection film, dicing film, and manufacturing method of semiconductor device |
| CN1986154A (en) * | 2005-12-20 | 2007-06-27 | 希特隆股份有限公司 | Silicon wafer grinding apparatus, retaining assembly, and silicon wafer flatness correcting method |
| CN101465292A (en) * | 2007-12-21 | 2009-06-24 | 株式会社迪思科 | Resin covering method and apparatus |
| EP2246878A1 (en) * | 2009-04-30 | 2010-11-03 | Shin-Etsu Chemical Co., Ltd. | Method for preparing soi substrate having backside sandblasted |
| CN101964306A (en) * | 2009-07-23 | 2011-02-02 | 株式会社迪思科 | Wafer grinding method and protection belt |
| CN103702798A (en) * | 2011-06-21 | 2014-04-02 | 信越半导体株式会社 | Polishing head, polishing device, and workpiece polishing method |
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Effective date of registration: 20151123 Address after: 344000 Jiangxi city of Fuzhou province high tech Zone gold Ni Road No. 198 incubator Park A7 building 3 floor Applicant after: JIANGXI DEYI SEMICONDUCTOR TECHNOLOGY CO., LTD. Address before: 100000 Beijing city Haidian District Shangyuan village of 3 homes and 2003 Graduate School of Mechatronics Applicant before: Yi Defu |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150114 |
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| RJ01 | Rejection of invention patent application after publication |