CN104278237A - Preparation method of metal and metal carbide superimposed composite coating layer - Google Patents
Preparation method of metal and metal carbide superimposed composite coating layer Download PDFInfo
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- CN104278237A CN104278237A CN201310272296.8A CN201310272296A CN104278237A CN 104278237 A CN104278237 A CN 104278237A CN 201310272296 A CN201310272296 A CN 201310272296A CN 104278237 A CN104278237 A CN 104278237A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- Chemical Kinetics & Catalysis (AREA)
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- Physical Vapour Deposition (AREA)
Abstract
The invention relates to a preparation method of a metal and metal carbide superimposed composite coating layer, mainly aims at ultra high temperature protection of a C/C composite material, and designs a low-stress alternating coating layer structure, wherein a part is put into a vacuum chamber of an electric arc ion plating device, the part is taken out through stages of vacuum pumping, argon introduction, sputtering cleaning with addition of negative bias, alternate introduction of protective gas or mixed gas of the protective gas and reaction gas, arc striking, coating layer deposition, power outage, cooling and the like to obtain the coating layer; the coating layer structure can effectively allow the stress in the coating layer to be reduced at the temperature of 2273-3473 K, and prevents the tantalum carbide coating layer from cracking; at the same time, the electric arc ion plating method is provided, superimposed deposition of the alternated coating layer can be carried out in the vacuum chamber without transferring the part, no pollution product is discharged, and the method is environmentally friendly; with the additional bias in sputtering cleaning and deposition before coating, the binding power can be effectively improved, and the deposition rate is higher. The preparation method has quite simple and convenient process and operation, and is convenient for industrialized production.
Description
Technical field
The present invention relates to the preparation method of a kind of metal and carbide coating, particularly the preparation method of compound coating that mutually superposes of the carbide of a kind of refractory metal and this metal or other refractory metals.Be applicable to the high temperature protection of C/C composite material parts, belong to field of surface technology.
Background technology
C/C matrix material has fabulous mechanical behavior under high temperature, it is the structured material that uniquely can use at more than 2000K, but it is easily oxidized when more than 643K, significantly limit its application, prepare one deck oxidation resistant coating on its surface, effectively can improve the high-temperature oxidation resistance of C/C matrix material.At present, at 1923 below K, there is ripe coating protection system and preparation method.Under 2273 K and higher temperature, protection effect is always unsatisfactory.
Tantalum carbide coating fusing point high (4153K), hardness high (1800HV), chemical stability are good, resistance to particle washes away, heat shock resistance, resistance to oxidation, certain mechanical property can be kept within the scope of (3173 ~ 3473) K, can be used to the resistance of oxidation of raising C/C matrix material, bear higher fuel gas temperature or longer working hour.
The preparation method of tantalum carbide coating mainly contains following several at present: one is chemical Vapor deposition process, using the halogenide (as tantalum pentachloride) of tantalum or organic precursor (as tantalum oxalate) as source of the gas, at a certain temperature by while hydrogen reducing, react with hydrocarbon gas, generate tantalum carbide coating, but the source of the gas that the method uses is expensive, synthesize not easily, the product pollution environment such as the hydrogen halide of generation; Two is sol-gel methodes, using the alkoxide of tantalum or inorganic salt as precursor, is dissolved in solvent and the formation colloidal sol that reacts, be coated in by colloidal sol on matrix, glued membrane, after gel, drying and sintering, obtains tantalum carbide coating, but the method is long for reaction time, and coating is thin, and very easily occurs crackle; Three is reactive sputterings, adopt high energy (as 2KeV) high-purity (as 99.999%) argon gas as incident ion, with the collision process of tantalum target and graphite target surface atom, sputtered out respectively, the tantalum atom sputtered out and carbon atom react formation tantalum carbide, be deposited on matrix surface, but the method sedimentation rate is low, coating is thin; Four is evaporation reaction methods, tantalum wire is heated to more than 2273K, passes into hydrogen and hydrocarbon polymer and the tantalum atom that evaporates reacts, form tantalum carbide coating, but owing to not activating matrix surface in deposition process, the bonding force of coating prepared by the method and matrix is poor.
The fusing point of molybdenum coating, tantalum coating and tungsten coating is high, is respectively 2890K, 3287K and 3680K, and its ductility is good, can make transition layer, reduces the stress between metal-carbide coating (as tantalum carbide) and matrix.Tantalum coating and tungsten coating mainly adopt the method for chemical vapour deposition to prepare at present, and sedimentation rate is higher, but source of the gas is expensive, has corrodibility to equipment, the product pollution environment such as the hydrogen halide of generation.
Summary of the invention
The object of the present invention is to provide the compound coating of a kind of metal of operable low-stress under 2273K ~ 3473K and metallic carbide superposition and can simultaneously prepared method, this preparation method is simple, environmental protection, is applicable to suitability for industrialized production.
The object of the invention is by such technical scheme realize, the preparation method of the compound coating that a kind of metal superposes with metallic carbide, is characterized in that: in arc ion plating apparatus vacuum chamber, pass into argon gas, vacuum tightness maintenance 3 × 10
-1pa ~ 5 × 10
-1pa, regulate dutycycle 0.5 ~ 0.8, negative bias 200V ~ 300V, be placed on as arc ignition on arc source position using the metal targets as deposition source, arc current is 150A ~ 220A, after metal refining 18min ~ 25min, close arc source, pass into reactant gases acetylene or methane gas, reduce argon gas, make the volume ratio of argon gas and acetylene or methane gas be 1:2 ~ 1:5, vacuum tightness keeps 3 × 10
-1pa ~ 5 × 10
-1pa, the metal targets be placed on arc source position of igniting, arc current is 180A ~ 220A, deposited metal carbide 18min ~ 30min.
Metal targets of the present invention is metal tantalum, metal molybdenum or tungsten, and the content of described metal tantalum, metal molybdenum or tungsten is all more than 99.95%.
Described metallic coating is tantalum (Ta) layer, molybdenum (Mo) layer or tungsten (W) layer; Described metallic carbide layer is layer of tantalum carbide, repeats the process of above-mentioned metal refining coating and deposited metal carbide coatings, and the coat-thickness of the coating superposition more than twice of the coating of the described metal of deposition and the described metallic carbide of deposition is 6 μm ~ 300 μm; The thickness modulation period of superposition coating is 1 μm ~ 10 μm, and superposition is once a modulation period, and wherein the thickness of metallic coating is 1 μm ~ 9 μm, and the thickness of metal-carbide coating is 1 μm ~ 9 μm.Refer to the thickness of primary depositing metallic coating and the thickness sum of primary depositing metal-carbide coating described modulation period, the coat-thickness superposing more than twice becomes compound coating thickness.
Described argon gas is stored in argon bottle, and described acetylene or methane gas are stored in acetylene or methane gas cylinder; The volume ratio of described argon gas and acetylene or methane gas is 1:2 ~ 1:5, the best results of depositing silicon tantalum coating that wherein argon gas and acetylene gas volume ratio are 1:2 ~ 1:4 or argon gas and methane gas volume ratio when being 1:3 ~ 1:5.
In order to make coating and described C/C composite material parts bonding force good, must pre-treatment being carried out before carrying out ion plating: namely at temperature 200 DEG C ~ 300 DEG C heated baking 4h ~ 12h, taking out in 2h through being greater than 6 × 10 without putting into vacuum tightness after the anhydrous dry high pressure argon gas dust removal process of oil
-2in the ion plating vacuum chamber of Pa.
In order to make coating and described C/C composite material parts bonding strength high, described C/C composite material parts is after pretreatment again through sputter clean: regulate dutycycle be 0.5 ~ 0.8, negative bias is 600 V ~ 850V, cleaning 30s ~ 120s.
Especially be 0.5 ~ 0.8 in dutycycle, when negative bias is 600V ~ 850V, cleaning 30s ~ 120s; Dutycycle is 0.5 ~ 0.8, and when negative bias is 700V ~ 850V, then when cleaning 30s ~ 120s, cleaning performance is good.
After completing the process of above-mentioned metal refining coating and deposited metal carbide coatings, close arc source, and no longer pass into acetylene, close heating, close bias voltage, cooling is come out of the stove.
Owing to have employed technique scheme, the present invention has following advantage:
(1) the present invention is directed to the high temperature protection of C/C composite material parts, devise a kind of alternate coatings structure of low-stress, arc ion plating apparatus vacuum chamber is put into by part, through vacuumizing, logical argon gas, add negative bias sputter clean, alternately pass into the gas mixture of argon gas or argon gas and acetylene or methane, striking, deposited coatings, power-off, take out part after the stages such as cooling and obtain coating, the tantalum that ductility is good is adopted in coating structure, molybdenum or tungsten are as transition layer, reduce the stress in coating, prevent tantalum carbide coating cracking, simultaneously, the arc ions electroplating method provided, the superposition deposition of alternate coatings can be carried out in a vacuum chamber, without the need to transfer parts, contaminative product is not had to discharge, environmental friendliness, sputter clean before coating and negative bias additional in depositing, effectively can improve bonding force, sedimentation rate is higher.
(2) preparation method of the present invention, its technique is all very easy with operation, is convenient to suitability for industrialized production.
Accompanying drawing explanation
Fig. 1 tantalum-tantalum carbide multilayer that to be embodiment 1 be lining with preparation at C/C matrix material larynx replaces the sectional drawing of compound coating.
Specific embodiment
Following embodiment be only used as explanation of the present invention, per-cent wherein without specified otherwise, all with volume percentage.
Embodiment 1: the preparation method of the compound coating that a kind of metal superposes with metallic carbide, comprises the following steps:
(1) pre-treatment of C/C composite material parts: heated baking 12h at 200 DEG C.Put into vacuum tightness after employing carries out drifting dust process without oily anhydrous high pressure argon gas in taking-up 2h and be greater than 6 × 10
-2pa ion plating vacuum chamber.
(2) sputter clean before coating: put into arc ion plating apparatus vacuum chamber, Heating temperature 160 DEG C, vacuum tightness 4 × 10
-2pa, regulate dutycycle to be 0.5, negative bias is 600V, cleaning 50s, then regulates dutycycle to be 0.6, and negative bias is 850V, cleaning 50s.
(3) deposited coatings process: logical argon gas, vacuum tightness remains on 4 × 10
-1pa, regulate dutycycle to be 0.5, negative bias 200V, ignite tantalum target, and arc current is 180A, and after deposition 20min, close arc source, pass into acetylene, reduce argon gas, the volume ratio making argon gas and acetylene is 1:3, and keeps vacuum tightness to be 4 × 10
-1pa, ignite tantalum target, and arc current is 200A, and after deposition 20min, again repeat said process, total depositing time is 80min.Close arc source, and no longer pass into acetylene, close heating, close bias voltage, cooling is come out of the stove.The coating structure prepared is: tantalum (1 μm)+tantalum carbide (2 μm)+tantalum (1 μm)+tantalum carbide (2 μm).
Embodiment 2: the preparation method of the compound coating that a kind of metal superposes with metallic carbide, comprises the following steps:
(1) pre-treatment of C/C composite material parts: heated baking 8h at 250 DEG C.Put into vacuum tightness after employing carries out drifting dust process without oily anhydrous high pressure argon gas in taking-up 2h and be greater than 6 × 10
-2pa ion plating vacuum chamber.
(2) sputter clean before coating: put into arc ion plating apparatus vacuum chamber, Heating temperature 180 DEG C, vacuum tightness 6 × 10
-2pa, regulate dutycycle to be 0.6, negative bias is 650V, cleaning 50s, then regulates dutycycle to be 0.6, and negative bias is 850V, cleaning 50s.
(3) deposited coatings process: logical argon gas, vacuum tightness remains on 4 × 10
-1pa, regulate dutycycle to be 0.6, negative bias 250V, ignite molybdenum target electric arc, and arc current is 205A, and after deposition 20min, close arc source, pass into acetylene, reduce argon gas, the volume ratio making argon gas and acetylene is 1:3, and keeps vacuum tightness to be 4 × 10
-1pa, ignite tantalum target electric arc, and arc current is 205A, and after deposition 20min, again repeat said process, total depositing time is 80min.Close arc source, and no longer pass into acetylene, close heating, close bias voltage, cooling is come out of the stove.The coating structure prepared is: molybdenum (1 μm)+tantalum carbide (2 μm)+molybdenum (1 μm)+tantalum carbide (2 μm).
Embodiment 3: the preparation method of the compound coating that a kind of metal superposes with metallic carbide, comprises the following steps:
(1) pre-treatment of C/C composite material parts: heated baking 4h at 300 DEG C.Put into vacuum tightness after employing carries out drifting dust process without oily anhydrous high pressure argon gas in taking-up 2h and be greater than 6 × 10
-2pa ion plating vacuum chamber.
(2) sputter clean before coating: put into arc ion plating apparatus vacuum chamber, Heating temperature 200 DEG C, vacuum tightness 6 × 10
-2pa, regulate dutycycle to be 0.6, negative bias is 650V, cleaning 50s, then regulates dutycycle to be 0.6, and negative bias is 850V, cleaning 50s.
(3) deposited coatings process: logical argon gas, vacuum tightness remains on 4 × 10
-1pa, regulate dutycycle to be 0.8, negative bias 300V, ignite tungsten target electric arc, and arc current is 210A, and after deposition 20min, close arc source, pass into acetylene, reduce argon gas, the volume ratio making argon gas and acetylene is 1:3, and keeps vacuum tightness to be 4 × 10
-1pa, ignite tantalum target electric arc, and arc current is 210A, and after deposition 20min, again repeat said process, total depositing time is 80min.Close arc source, and no longer pass into acetylene, close heating, close bias voltage, cooling is come out of the stove.The coating structure prepared is: tungsten (1 μm)+tantalum carbide (2 μm)+tungsten (1 μm)+tantalum carbide (2 μm).
The over-all properties of the compound coating that table 1 superposes with metallic carbide for the metal obtained by embodiment 1, embodiment 2 and embodiment 3 preparation method is in table 1.
Table 1
Find out from table 1 detected result, the compound coating that the metal obtained by embodiment 1, embodiment 2 and embodiment 3 preparation method superposes with metallic carbide at high temperature uses flawless, does not ftracture.
Claims (9)
1. the preparation method of compound coating that superposes with metallic carbide of metal, it is characterized in that: pass into argon gas, vacuum tightness keeps 3 × 10
-1pa ~ 5 × 10
-1pa, heat 150 DEG C ~ 200 DEG C, regulate dutycycle 0.5 ~ 0.8, negative bias 200V ~ 300V, the metal targets as deposition source is placed on arc source position up-igniting, arc current is 150A ~ 220A, after metal refining 18min ~ 25min, close arc source, pass into acetylene or methane gas, regulate argon gas, vacuum tightness keeps 3 × 10
-1pa ~ 5 × 10
-1pa, the metal targets be placed on arc source position of igniting, arc current is 180A ~ 220A, deposited metal carbide 18min ~ 30min.
2. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 1, is characterized in that: described metal targets is metal tantalum, metal molybdenum or tungsten, and the content of metal tantalum, metal molybdenum or tungsten is all more than 99.95%.
3. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 1, is characterized in that: the volume ratio of described argon gas and acetylene or methane gas is 1:2 ~ 1:5.
4. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 3, is characterized in that: described argon gas and acetylene gas volume ratio are 1:2 ~ 1:4 or described argon gas and methane gas volume ratio is 1:3 ~ 1:5.
5. the preparation method of the compound coating that the metal as described in any one of Claims 1 to 4 superposes with metallic carbide, it is characterized in that: before metal refining coating and deposited metal carbide layer, must pre-treatment be carried out: at temperature 200 DEG C ~ 300 DEG C heated baking 4h ~ 12h, taking out in 2h through being greater than 6 × 10 without putting into vacuum tightness after the anhydrous dry high pressure argon gas dust removal process of oil
-2in the ion plating vacuum chamber of Pa.
6. the preparation method of compound coating that superpose with metallic carbide of metal as claimed in claim 5, is characterized in that: after pretreatment again through sputter clean: adjustment dutycycle is 0.5 ~ 0.8, and negative bias is 600V ~ 850V, cleans 30s ~ 120s.
7. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 6, is characterized in that: described sputter clean is dutycycle is 0.5 ~ 0.8, when negative bias is 600V ~ 850V, cleans 30s ~ 120s; Dutycycle is 0.5 ~ 0.8, and negative bias is 700 V ~ 850V, then cleans 30s ~ 120s.
8. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 1, is characterized in that: the coat-thickness that the coating of the coating of the described metal of deposition and the described metallic carbide of deposition superposes more than twice is 6 μm ~ 300 μm; The thickness modulation period of superposition coating is 1 μm ~ 10 μm, and wherein the thickness of metallic coating is 1 μm ~ 9 μm, and the thickness of metal-carbide coating is 1 μm ~ 9 μm.
9. the preparation method of compound coating that superposes with metallic carbide of metal as claimed in claim 7, it is characterized in that: the coat-thickness of the coating of the coating of the described metal of deposition and the described metallic carbide of deposition superposition more than twice is 6 μm ~ 300 μm, the thickness modulation period of superposition coating is 1 μm ~ 10 μm; Wherein the thickness of metallic coating is 1 μm ~ 9 μm, and the thickness of metal-carbide coating is 1 μm ~ 9 μm.
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109320303A (en) * | 2018-10-31 | 2019-02-12 | 中国兵器工业第五九研究所 | Anti-oxidant ablative-resistant layer of superhigh temperature and preparation method thereof |
CN110541155A (en) * | 2019-09-30 | 2019-12-06 | 上海治臻新能源装备有限公司 | A four-chamber deposition system for metal carbide coatings on fuel cell plates |
CN111647862A (en) * | 2020-06-28 | 2020-09-11 | 中国科学院宁波材料技术与工程研究所 | Tantalum-based anti-corrosion protection composite coating and preparation method and application thereof |
CN112620847A (en) * | 2020-12-09 | 2021-04-09 | 核工业西南物理研究院 | Method for enhancing brazing connection between carbon-based material and copper alloy |
CN115233164A (en) * | 2022-07-22 | 2022-10-25 | 安徽工业大学 | A kind of arc ion plating method of diamond reinforced composite material |
CN115637419A (en) * | 2022-10-12 | 2023-01-24 | 厦门中材航特科技有限公司 | Preparation method of tantalum-tantalum carbide composite coating and product thereof |
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CN102677003A (en) * | 2012-06-11 | 2012-09-19 | 李林 | Low-temperature deposition process of multi-arc ion plated nanometer multielement composite film |
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Cited By (8)
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CN109320303A (en) * | 2018-10-31 | 2019-02-12 | 中国兵器工业第五九研究所 | Anti-oxidant ablative-resistant layer of superhigh temperature and preparation method thereof |
CN109320303B (en) * | 2018-10-31 | 2021-03-30 | 中国兵器工业第五九研究所 | Ultrahigh-temperature oxidation-resistant ablation-resistant layer and preparation method thereof |
CN110541155A (en) * | 2019-09-30 | 2019-12-06 | 上海治臻新能源装备有限公司 | A four-chamber deposition system for metal carbide coatings on fuel cell plates |
CN111647862A (en) * | 2020-06-28 | 2020-09-11 | 中国科学院宁波材料技术与工程研究所 | Tantalum-based anti-corrosion protection composite coating and preparation method and application thereof |
CN112620847A (en) * | 2020-12-09 | 2021-04-09 | 核工业西南物理研究院 | Method for enhancing brazing connection between carbon-based material and copper alloy |
CN115233164A (en) * | 2022-07-22 | 2022-10-25 | 安徽工业大学 | A kind of arc ion plating method of diamond reinforced composite material |
CN115637419A (en) * | 2022-10-12 | 2023-01-24 | 厦门中材航特科技有限公司 | Preparation method of tantalum-tantalum carbide composite coating and product thereof |
CN115637419B (en) * | 2022-10-12 | 2024-11-12 | 厦门中材航特科技有限公司 | A method for preparing a tantalum-tantalum carbide composite coating and its products |
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