CN104269386A - Multi-chip packaging bonding layer heat-conducting tooth structure - Google Patents

Abstract

The invention discloses a heat conduction tooth structure of a multi-chip package adhesive layer, which comprises a fin-shaped heat sink (3), and the upper surface of the fin-shaped heat sink (3) is connected to a packaging substrate (2) through an adhesive layer (4) ), the upper surface of the package substrate (2) is provided with heat conduction teeth (6), and the heat conduction teeth (6) are welded to the package substrate (2) through the welding adhesive layer (5), and the heat conduction teeth ( 6) A plurality of intermittently arranged semiconductor chips (1) are fixed on it. The invention has a simple structure, and can open a fast heat conduction channel between the semiconductor chip and the fin-shaped heat sink, so that each chip can dissipate heat well, thereby not only protecting the chip, but also effectively dissipating heat on the chip.

Description

A multi-chip packaging adhesive layer heat conduction tooth structure

technical field

The invention relates to the technical field of semiconductor heat dissipation, in particular to a multi-chip package adhesive layer heat conduction tooth structure.

Background technique

The fabrication of modern integrated circuits involves several steps. Integrated circuits are first fabricated on a semiconductor wafer containing a plurality of repeating semiconductor chips, each including a semiconductor integrated circuit. Semiconductor chips are then diced from the wafer and packaged.

The thermal reliability and thermal stability of the chip package have become one of the urgent problems to be solved in chip design. For chip heat dissipation, in addition to using hardware (radiator) to realize chip heat dissipation, the design of the chip itself will also have a significant impact on heat dissipation. The heat generated by the chip itself, except for a small part of the heat dissipated through the surface of the chip and the solder joints, is mainly dissipated through the bottom of the chip to the heat dissipation substrate. Therefore, there are generally two ideas for chip design today. One is to use new semiconductor materials with high thermal conductivity such as silicon carbide (SiC), whose thermal conductivity is three to four times that of traditional silicon devices, in order to improve the performance of chips for high-temperature applications. ; The other is to use different structures and different heat-conducting materials to stick design radiators to dissipate heat from chips. However, due to the need to consider the reliable bonding of the chip to the substrate, the generally used bonding solder cannot effectively transmit heat, which limits the role of the above two ideas in improving the heat dissipation function. Therefore, the chip packaging structure cannot effectively dissipate heat from the chip, and the risk of chip thermal runaway and rupture is high.

Contents of the invention

The object of the present invention is to provide a multi-chip package adhesive layer heat conduction tooth structure, which can effectively solve the problems existing in the background technology.

In order to solve the problems existing in the background technology, it includes a fin-shaped heat sink 3, the upper surface of the fin-shaped heat sink 3 is connected with the packaging substrate 2 through the adhesive layer 4, and the upper surface of the packaging substrate 2 is provided with The heat conduction teeth 6 are welded to the package substrate 2 through the welding adhesive layer 5 , and a plurality of intermittently arranged semiconductor chips 1 are fixed on the heat conduction teeth 6 .

The semiconductor material of the semiconductor chip 1 is at least one selected from silicon, germanium, silicon carbide and gallium nitride.

The soldering adhesive layer 5 is formed by soldering at least one of lead-tin solder or tin-lead-silver solder.

The soldering adhesive layer 5 is at least one of silver paste bonding technology, low melting point glass bonding technology, conductive adhesive bonding technology, epoxy resin bonding technology or eutectic soldering technology.

The packaging substrate 2 is at least one of copper substrate, alumina (Al ₂ O ₃ ) ceramics, beryllium oxide (BeO) ceramics, and aluminum nitride (AlN) ceramics.

The adhesive layer 4 is at least one of thermally conductive silica gel, silver paste, aluminum paste or tin paste.

The finned heat sink 3 is made of at least one of copper, copper alloy or diamond material.

Due to the adoption of the above technical scheme, the present invention has the following beneficial effects: the structure is simple, and a fast channel for heat conduction can be opened between the semiconductor chip and the fin-shaped heat sink, so that each chip can dissipate heat well, thereby protecting the chip, and can effectively dissipate heat from the chip.

Description of drawings

In order to illustrate the present invention more clearly, the embodiments will be briefly introduced below in conjunction with the accompanying drawings.

Fig. 1 is a structural representation of the present invention;

Fig. 2 is the top view of embodiment 2 among the present invention;

Fig. 3 is the top view of embodiment 3 among the present invention;

Fig. 4 is a top view of Embodiment 4 of the present invention.

detailed description

In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention.

Example 1

Referring to Fig. 1, it includes a fin-shaped heat sink 3, the upper surface of the fin-shaped heat sink 3 is connected with the package substrate 2 through the adhesive layer 4, and the upper surface of the package substrate 2 is provided with heat conduction teeth 6, the heat conduction The teeth 6 are welded to the packaging substrate 2 through the welding adhesive layer 5 , and a plurality of intermittently arranged semiconductor chips 1 are fixed on the heat conduction teeth 6 .

The semiconductor material of the semiconductor chip 1 is at least one selected from silicon, germanium, silicon carbide and gallium nitride.

The soldering adhesive layer 5 is formed by soldering at least one of lead-tin solder or tin-lead-silver solder.

The soldering adhesive layer 5 is at least one of silver paste bonding technology, low melting point glass bonding technology, conductive adhesive bonding technology, epoxy resin bonding technology or eutectic soldering technology.

The packaging substrate 2 is at least one of copper substrate, alumina (Al ₂ O ₃ ) ceramics, beryllium oxide (BeO) ceramics, and aluminum nitride (AlN) ceramics.

The adhesive layer 4 is at least one of thermally conductive silica gel, silver paste, aluminum paste or tin paste.

The finned heat sink 3 is made of at least one of copper, copper alloy or diamond material.

Example 2

Referring to Fig. 2, the heat conduction tooth 6 fixed on the packaging substrate 2 through the welding adhesive layer 5 is composed of several sub-heat conduction racks that have been cut, and the head and tail of each independent sub heat conduction rack are respectively fixed through the welding adhesive layer 5 At the bottom of two adjacent semiconductor chips 1 , and between the sub-thermal conduction teeth on both sides of the bottom of the semiconductor chip 1 , they are arranged in parallel and staggered with each other.

Example 3

Referring to FIG. 3 , the heat conduction teeth 6 fixed on the packaging substrate 2 through the welding adhesive layer 5 are composed of two complete sub heat conduction racks, and the two independent sub heat conduction racks are bent back at the bottom of the semiconductor chip 1 . The staggered configurations are mirror images of each other, and after the bending is completed, it extends to the bottom of the next adjacent semiconductor chip 1 to continue bending.

Example 4

Referring to Fig. 4, the heat conduction tooth 6 fixed on the packaging substrate 2 through the welding adhesive layer 5 is composed of two main heat conduction teeth and sub heat conduction teeth located on the upper and lower sides of the semiconductor chip 1, and one end of the sub heat conduction tooth is connected with the main heat conduction tooth. The teeth are welded and connected, the other end of which extends to the bottom of the semiconductor chip 1, and the sub-heat-conducting teeth on the two main heat-conducting teeth are mutually staggered.

Due to the adoption of the above technical scheme, the present invention has the following beneficial effects: the structure is simple, and a fast channel for heat conduction can be opened between the semiconductor chip and the fin-shaped heat sink, so that each chip can dissipate heat well, thereby protecting the chip, and can effectively dissipate heat from the chip.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those of ordinary skill in the art should understand that it can still be Modifications are made to the technical solutions described in the foregoing embodiments, or equivalent replacements are made to some of the technical features; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the various embodiments of the present invention.

Claims (7)

1. A multi-chip packaging bonding layer heat conduction tooth structure is characterized in that it comprises a fin-shaped heat sink (3), and the upper surface of this fin-shaped heat sink (3) is connected to the packaging substrate ( 2) connected, the upper surface of the package substrate (2) is provided with heat conduction teeth (6), the heat conduction teeth (6) are welded to the package substrate (2) through the welding adhesive layer (5), and the heat conduction teeth (6) is fixed with a plurality of intermittently arranged semiconductor chips (1). 2. A multi-chip packaging adhesive layer thermal tooth structure according to claim 1, characterized in that the semiconductor material of the semiconductor chip (1) is selected from silicon, germanium, silicon carbide and gallium nitride at least one. 3. A multi-chip packaging adhesive layer heat conduction tooth structure according to claim 1, characterized in that said solder adhesive layer (5) is soldered by at least one of lead-tin solder or tin-lead-silver solder made. 4. A multi-chip packaging adhesive layer heat conduction tooth structure according to claim 1, characterized in that the solder adhesive layer (5) is silver paste bonding technology, low melting point glass bonding technology, conductive adhesive At least one of bonding technology, epoxy resin bonding technology or eutectic soldering technology. 5. A multi-chip package adhesive layer thermal tooth structure according to claim 1, characterized in that the package substrate (2) is a copper substrate, aluminum oxide (Al ₂ O ₃ ) ceramics, beryllium oxide (BeO ) ceramics, aluminum nitride (AlN) ceramics at least one. 6. A multi-chip packaging adhesive layer thermal tooth structure according to claim 1, characterized in that the adhesive layer (4) is thermally conductive silica gel, silver paste, aluminum paste or tin paste at least one. 7. A multi-chip packaging adhesive layer thermal tooth structure according to claim 1, characterized in that said fin-shaped heat sink (3) is made of at least one of copper, copper alloy or diamond material become.