CN104218129A - Led substrate structure and manufacturing method thereof - Google Patents

Abstract

The invention provides an LED substrate structure and a manufacturing method thereof. Firstly, the patterned substrate technology and the DBR technology are organically combined to more effectively improve the luminous efficiency and luminous brightness of the LED; secondly, the concave structure Or the convex structure and the DBR film system are located on the same surface of the substrate, and both are completed before the substrate is thinned, which is convenient for processing and subsequent cleaning, which undoubtedly reduces the hidden cost in the process of LED processing; again, in making The window of the DBR film system does not need photolithography, which avoids the technical bottleneck of difficult alignment of photolithography in the process of micro-nano pattern processing; in a word, the manufacturing method of the LED substrate structure provided by the present invention is simple in process, low in cost, and suitable for use. For large-scale commercial production, the LED substrate structure can more effectively improve the luminous efficiency and luminous brightness of LEDs, and can accelerate the industrialization process of LEDs entering the high-end lighting field and ordinary people's homes, which is in line with the sustainable development strategy of LEDs.

Description

LED substrate structure and manufacturing method thereof

technical field

The invention relates to the technical field of semiconductor optoelectronic chip manufacturing, in particular to an LED substrate structure and a manufacturing method thereof.

Background technique

With the improvement of people's living standards, the enhancement of environmental awareness, and the continuous improvement of the pursuit of home environment, leisure and comfort, lamps and lanterns have gradually shifted from simple lighting functions to the coexistence of lighting and decoration. It is inevitable that solid-state cold light source LED will replace traditional light source and enter people's daily life.

Since the commercialization of GaN-based LEDs in the early 1990s, after more than 20 years of development, its structure has become mature and perfect, and it has been able to meet people's current needs for lighting decoration; but it must completely replace traditional light sources and enter the lighting industry. field, the improvement of luminous brightness is the never-ending pursuit of scientific researchers in the LED industry.

Under the premise that the internal quantum efficiency (already close to 100%) can be improved, researchers in the LED industry turned their attention to the external quantum efficiency, and proposed various technical solutions and methods that can improve the light extraction rate, such as graphics Substrate technology, sidewall roughening technology, DBR technology, optimization of electrode structure, fabrication of two-dimensional photonic crystals on substrates or transparent conductive films, etc. Among them, the patterned substrate is the most effective, especially since 2010, under the encouragement and promotion of various government policies, whether it is the cone-shaped dry patterned substrate technology or the pyramid-shaped wet patterned substrate technology All have been developed rapidly, and its technology has been very mature, and it completely replaced the flat substrate in 2012, becoming the mainstream substrate of LED chips, so that the crystal structure and luminous brightness of LEDs have been revolutionaryly improved.

Of course, after thinning, the technology of evaporating DBR on the back of the LED substrate can also improve the luminance of the LED to a certain extent. However, after thinning, the LED chip is already very thin (only about 80um), and it is very easy to crack, and once an abnormality occurs, it is not easy to do rework and can only be scrapped, so the cost of the DBR process is far more than material and processing costs, more are hidden costs. So at this stage, LED replaces the traditional lighting source, enters the lighting field, and enters the homes of ordinary people. The problem encountered is not the problem of insufficient brightness, but the problem of high quality and low price, and this kind of problem is generally not reasonable enough in structure. 1. The process technology is not optimized enough, resulting in insufficient scientific manufacturing cost.

Contents of the invention

The object of the present invention is to provide an LED substrate structure and a manufacturing method thereof, so as to solve the problems of the existing LEDs that the luminance is not enough, or is easy to be broken during the manufacturing process, and the cost is high.

In order to solve the above technical problems, the present invention provides an LED substrate structure, which includes: a substrate on which are formed a concave structure arranged in a periodic array or a concave structure arranged in a periodic array. In the convex structure, a DBR film system is formed on the inner wall of the concave structure; or a DBR film system is formed on the side wall of the convex structure and the substrate surface between the convex structure.

Optionally, in the LED substrate structure, there is no DBR film on the substrate surface between the concave structures; or there is no DBR film on the top wall of the convex structures.

Optionally, in the LED substrate structure, the substrate surface between the concave structures is convenient for connecting the GaN layer; or the top wall of the convex structure is convenient for connecting the GaN layer.

Optionally, in the LED substrate structure, the cross-sectional shape of the concave structure is a triangle or a trapezoid; the cross-sectional shape of the convex structure is a trapezoid.

Optionally, in the LED substrate structure, the top view shape of the concave structure is circle, ellipse or polygon; the top view shape of the convex structure is circle, ellipse or polygon.

Optionally, in the LED substrate structure, the DBR film system is formed by stacking at least two materials of SiO, SiO ₂ , TiO ₂ or Ti ₃ O ₅ .

Optionally, in the LED substrate structure, each material is grown alternately according to the thickness of λ/4n, and the growth cycle of the DBR film system is 3-20.

Optionally, in the LED substrate structure, the substrate is a sapphire substrate.

The present invention also provides a method for manufacturing an LED substrate structure, and the method for manufacturing the LED substrate structure includes:

provide the substrate;

Etching the substrate to form concave structures arranged in a periodic array or convex structures arranged in a periodic array on the substrate;

A DBR film system is formed on the inner wall of the concave structure; or a DBR film system is formed on the substrate surface between the side wall of the convex structure and the convex structure.

Optionally, in the method for manufacturing the LED substrate structure, the substrate is etched to form concave structures arranged in a periodic array or convex structures arranged in a periodic array on the substrate. Structures include:

forming a mask layer on the substrate;

Use photolithography and etching processes to remove part of the mask layer and expose part of the substrate;

Etching the exposed part of the substrate to form a periodic array of concave structures or a periodic array of convex structures on the substrate;

Remove the remaining masking layer.

Optionally, in the manufacturing method of the LED substrate structure, in forming a mask layer on the substrate, the material of the mask layer is silicon dioxide, silicon nitride and silicon oxynitride. At least one, the thickness of the mask layer is 0.1 μm˜1 μm.

Optionally, in the method for manufacturing the LED substrate structure, the exposed part of the substrate is etched using a dry or wet etching process.

Optionally, in the method for manufacturing the LED substrate structure, when using a wet etching process to etch the exposed part of the substrate, the etching solution used is a mixed solution of sulfuric acid and phosphoric acid, and the mixed solution The volume ratio of sulfuric acid and phosphoric acid in the liquid is 3:1 to 10:1, the process temperature is 200°C to 300°C, and the process time is 1 minute to 60 minutes.

Optionally, in the method for manufacturing the LED substrate structure, when using a dry etching process to etch the exposed part of the substrate, the selected dry etching process is inductively coupled plasma dry etching craft.

Optionally, in the manufacturing method of the LED substrate structure, a DBR film system is formed on the inner wall of the concave structure; or the substrate between the side wall of the convex structure and the convex structure The DBR film system formed on the surface includes:

Form a DBR film system on the inner wall of the concave structure and the substrate surface between the concave structures; or form a DBR on the side wall, the top wall of the convex structure, and the substrate surface between the convex structures. Film system;

forming a photoresist on the DBR film system;

Etching the photoresist and the first exposed DBR film system, removing part of the photoresist and the DBR film system on the substrate surface between the concave structures or the DBR film system on the top wall of the convex structure;

Remove remaining photoresist.

Optionally, in the manufacturing method of the LED substrate structure, the thickness of the photoresist is larger than the depth of the concave structure or the height of the convex structure.

Optionally, in the method for manufacturing the LED substrate structure, the substrate is a sapphire substrate.

Optionally, in the manufacturing method of the LED substrate structure, the DBR film system is formed by stacking at least two materials among SiO, SiO ₂ , TiO ₂ or Ti ₃ O ₅ , each material according to λ/ The thickness of 4n is alternately grown and formed, and the growth cycle of the DBR film system is 3-20.

In the LED substrate structure and manufacturing method provided by the present invention, firstly, the patterned substrate technology and the DBR technology are organically combined to more effectively improve the luminous efficiency and luminous brightness of the LED; secondly, the concave structure Or the convex structure and the DBR film system are located on the same surface of the substrate, and both are completed before the substrate is thinned, which is very convenient for processing and subsequent cleaning, which undoubtedly reduces the hidden cost in the LED processing process; again, in When making the window of the DBR film system, no photolithography is required, which avoids the technical bottleneck of difficult alignment of photolithography in the process of micro-nano pattern processing; in a word, the manufacturing method of the LED substrate structure provided by the present invention is simple in process and low in cost. Suitable for large-scale commercial production, the LED substrate structure provided by the present invention can more effectively improve the luminous efficiency and luminous brightness of LEDs, and can accelerate the industrialization process of LEDs entering the field of high-end lighting and ordinary people's homes. sustainable development strategy.

Description of drawings

1 is a schematic flow chart of a method for manufacturing an LED substrate structure according to Embodiment 1 of the present invention;

2 to 10 are schematic cross-sectional views of the device structure formed in the method for manufacturing the LED substrate structure according to Embodiment 1 of the present invention;

Fig. 11 is a top view of the device structure shown in Fig. 4;

Fig. 12 is a schematic flowchart of a method for manufacturing an LED substrate structure according to Embodiment 2 of the present invention;

13 to 21 are schematic cross-sectional views of the device structure formed in the manufacturing method of the LED substrate structure according to Embodiment 2 of the present invention;

Figure 22 is a top view of the device structure shown in Figure 15;

Fig. 23 is a schematic cross-sectional view of an LED substrate structure according to Embodiment 3 of the present invention.

Detailed ways

The structure of the LED substrate proposed by the present invention and its manufacturing method will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[Example 1]

Please refer to FIG. 1 , which is a schematic flowchart of a method for manufacturing an LED substrate structure according to Embodiment 1 of the present invention. As shown in Figure 1, the manufacturing method of the LED substrate structure includes:

Step S10: providing a substrate;

Step S11: etching the substrate to form convex structures arranged in a periodic array on the substrate;

Step S12: forming a DBR film system on the substrate surface between the sidewall of the convex structure and the convex structure.

Specifically, please refer to FIGS. 2 to 11, wherein, FIGS. 2 to 10 are schematic cross-sectional views of the device structure formed in the method for manufacturing the LED substrate structure according to Embodiment 1 of the present invention; Top view of the device structure.

As shown in FIG. 2 , a substrate 20 is provided, preferably, the substrate 20 is a sapphire substrate.

Next, as shown in FIGS. 3 to 6 , the substrate 20 is etched to form convex structures 22 arranged in a periodic array on the substrate 20 .

First, as shown in FIG. 3 , a mask layer 21 is formed on the substrate 20 . Preferably, the mask layer 21 has a thickness of 0.1 μm˜1 μm. Further, the material of the mask layer 21 may be at least one of silicon dioxide, silicon nitride, or silicon oxynitride.

Next, as shown in FIG. 4 , a part of the mask layer 21 is removed to expose a part of the substrate 20 by photolithography and etching processes. Here, reference may be made to FIG. 11 , which is a top view of the device structure shown in FIG. 4 . As shown in FIG. 11 , here, the shape of the substrate 20 is circular, and the remaining mask layer 21 is a plurality of discrete circular structures arranged in a periodic array, wherein, at the edge of the substrate 20 , the remaining mask layer 21 is limited by the size and shape of the substrate 20 and is not a complete circular structure. In other embodiments of the present application, the remaining mask layer 21 may also be a plurality of discrete elliptical structures, triangular or polygonal structures, etc., which are not limited in the present application.

Next, as shown in FIG. 5 , the exposed part of the substrate 20 is etched to form convex structures 22 arranged in a periodic array on the substrate 20 . Here, the cross-sectional shape of the convex structure 22 is trapezoidal.

In the embodiment of the present application, the exposed part of the substrate 20 may be etched by a dry etching process, or the exposed part of the substrate 20 may be etched by a wet etching process. Specifically, when using a wet etching process to etch the exposed portion of the substrate 20, the selected etching solution is a mixed solution of sulfuric acid and phosphoric acid, and the volume ratio of sulfuric acid and phosphoric acid in the mixed solution is 3:1- 10:1, the process temperature is 200°C to 300°C, and the process time is 1 minute to 60 minutes. Specifically, an adaptive selection can be made according to the height of the convex structure 22 to be formed, which will not be repeated in this embodiment of the present application. When the exposed part of the substrate is etched by a dry etching process, the selected dry etching process is an inductively coupled plasma dry etching process. The specific etching gas may be conventional etching gas in the art, such as chlorine, boron trichloride, or argon.

Finally, as shown in FIG. 6 , the remaining mask layer 21 is removed, that is, the mask layer 21 on the top wall of the convex structure 22 is removed.

After the convex structures 22 are formed, a DBR film system will be formed on the surface of the substrate 20 between the sidewalls of the convex structures 22 and the convex structures 22 , for details, please refer to FIGS. 7 to 10 .

First, as shown in FIG. 7, a DBR film system 23 is formed on the substrate surface 20 between the side wall, the top wall and the convex structure 22 of the convex structure 22; that is, a DBR film system 23 is formed, and the The DBR film system 23 covers the sidewalls and top walls of the convex structures 22 and the substrate surface 20 between the convex structures 22 . Preferably, the DBR film system 23 is formed by laminating at least two materials of SiO, SiO ₂ , TiO ₂ or Ti ₃ O ₅ , and each material is grown alternately according to the thickness of λ/4n, and the growth period is 3-20 indivual. For example, when the DBR film system 23 is formed by alternate growth of TiO ₂ and SiO ₂ layers, and the growth cycle is 3, TiO ₂ can be grown first to form a TiO ₂ film with a thickness of λ/4n _{TiO 2} , and then SiO ₂ can be grown to form a λ/4n TiO 2 film. /4n _SiO2 thick SiO ₂ film, this is the first cycle; then re-grow TiO ₂ to form a λ/4n _TiO2 thick TiO ₂ film, re-grow SiO ₂ to form a λ/4n _SiO2 thick SiO ₂ film, this is the second cycle Two cycles; finally re-grow TiO ₂ to form a TiO ₂ film with a thickness of λ/4n _TiO2 , and re-grow SiO ₂ to form a SiO ₂ film with a thickness of λ/4n _SiO2 . This is the third cycle, that is, each material according to λ/4n The thickness is alternately stacked and grown to form a three-period DBR film system. Next, as shown in FIG. 8 , a photoresist 24 is formed on the DBR film system 23 , preferably, the thickness of the photoresist 24 is greater than the height of the convex structure 22 .

Next, as shown in FIG. 9 , the photoresist 24 and the first exposed DBR film system 23 are etched to remove part of the photoresist 24 and the DBR film system 23 on the top wall of the convex structure 22 . That is, there is no DBR film system 23 on the top wall of the convex structure 22 .

Finally, as shown in FIG. 10, the remaining photoresist 24 is removed. Thus, a DBR film system 23 is formed on the surface of the substrate 20 between the sidewall of the convex structure 22 and the convex structure 22 .

Please continue to refer to FIG. 10 , that is, an LED substrate structure is formed, and the LED substrate structure includes: a substrate 20, on which a convex structure 22 arranged in a periodic array is formed, and the convex structure 22 is formed on the substrate 20. A DBR film system 23 is formed on the surface of the substrate 20 between the sidewall of the convex structure 22 and the convex structure 22, so as to better improve the luminance of the LED. In the subsequent manufacturing process of the LED, the top wall 220 of the convex structure 22 can be used to connect the GaN layer. In this way, a better connection between the LED substrate structure and the GaN layer can be achieved, thereby improving the quality of the GaN-based LED.

In summary, in the LED substrate structure and its manufacturing method provided by the embodiments of the present invention, firstly, the patterned substrate technology and the DBR technology are organically combined to more effectively improve the luminous efficiency and luminous brightness of the LED. ;Secondly, the convex structure and the DBR film system are located on the same surface of the substrate, and both are completed before the substrate is thinned, which is very convenient for processing and subsequent cleaning, which undoubtedly reduces the hidden cost in the process of LED processing; again , when making the window of the DBR film system, no photolithography is required, which avoids the technical bottleneck of difficult alignment of photolithography in the process of micro-nano pattern processing; in a word, the manufacturing method of the LED substrate structure provided by the present invention has simple process, low cost It is cheap and suitable for large-scale commercial production. The LED substrate structure provided by the invention can more effectively improve the luminous efficiency and luminous brightness of LEDs, and can accelerate the industrialization process of LEDs entering the high-end lighting field and ordinary people's homes. sustainable development strategy.

[Example 2]

Please refer to FIG. 12 , which is a schematic flowchart of a method for manufacturing an LED substrate structure according to Embodiment 2 of the present invention. As shown in Figure 12, the manufacturing method of the LED substrate structure includes:

Step S30: providing a substrate;

Step S31: etching the substrate to form concave structures arranged in a periodic array on the substrate;

Step S32: forming a DBR film system on the inner wall of the concave structure.

Specifically, please refer to Figures 13 to 22, wherein Figures 13 to 21 are schematic cross-sectional views of the device structure formed in the method for manufacturing the LED substrate structure in Embodiment 2 of the present invention; Top view of the device structure.

As shown in FIG. 13 , a substrate 40 is provided, preferably, the substrate 40 is a sapphire substrate.

Next, as shown in FIGS. 14 to 17 , the substrate 40 is etched to form concave structures 42 arranged in a periodic array on the substrate 40 .

First, as shown in FIG. 14 , a mask layer 41 is formed on the substrate 40 . Preferably, the mask layer 41 has a thickness of 0.1 μm˜1 μm. Further, the material of the mask layer 41 may be at least one of silicon dioxide, silicon nitride, or silicon oxynitride.

Next, as shown in FIG. 15 , a part of the mask layer 41 is removed to expose a part of the substrate 40 by photolithography and etching processes. Here, reference may be made to FIG. 22 , which is a top view of the device structure shown in FIG. 15 . As shown in FIG. 22 , here, the shape of the substrate 40 is circular, and the removed mask layer 41 is a plurality of discrete circular structures arranged in a periodic array, wherein, at the edge of the substrate 40 , the removed mask layer 41 is limited by the size and shape of the substrate 40 and is not a complete circular structure. In other embodiments of the present application, the removed mask layer 41 may also be a plurality of discrete elliptical structures, triangular structures or polygonal structures, etc., which is not limited in the present application.

Next, as shown in FIG. 16 , the exposed part of the substrate 40 is etched to form concave structures 42 arranged in a periodic array on the substrate 40 . Here, the cross-sectional shape of the concave structure 42 is trapezoidal.

In the embodiment of the present application, the exposed part of the substrate 40 may be etched by a dry etching process, or the exposed part of the substrate 40 may be etched by a wet etching process. Specifically, when the exposed part of the substrate 40 is etched by a wet etching process, the selected etching solution is a mixed solution of sulfuric acid and phosphoric acid, and the volume ratio of sulfuric acid and phosphoric acid in the mixed solution is 3:1- 10:1, the process temperature is 200°C to 300°C, and the process time is 1 minute to 60 minutes. Specifically, an adaptive selection can be made according to the depth of the concave structure 42 to be formed, which will not be repeated in this embodiment of the present application. When the exposed portion of the substrate 40 is etched by a dry etching process, the selected dry etching process is an inductively coupled plasma dry etching process. The specific etching gas may be conventional etching gas in the art, such as chlorine, boron trichloride, or argon.

Finally, as shown in FIG. 17 , the remaining mask layer 41 is removed, that is, the mask layer 41 on the surface of the substrate 40 between the concave structures 42 is removed.

After the concave structure 42 is formed, a DBR film system will be formed on the inner wall of the concave structure 42 , for details, please refer to FIGS. 18 to 21 .

First, as shown in Figure 18, a DBR film system 43 is formed on the inner wall of the concave structure 42 and on the surface of the substrate 40 between the concave structures 42; that is, a DBR film system 43 is formed, and the DBR film system 43 Covering the inner wall of the concave structure 42 and the surface of the substrate 40 between the concave structures 42 . Preferably, the DBR film system 43 is formed by stacking at least two materials of SiO, SiO ₂ , TiO ₂ or Ti ₃ O ₅ , each material is alternately grown according to the thickness of λ/4n, and the growth cycle is 3-20 . For example, when the DBR film system 43 is formed by alternate growth of TiO ₂ and SiO ₂ layers, when the growth cycle is 3, TiO ₂ can be grown first to form a TiO ₂ film with a thickness of λ/4n _{TiO 2} , and then grown SiO ₂ to form a λ /4n _SiO2 thick SiO ₂ film, this is the first cycle; then re-grow TiO ₂ to form a λ/4n _TiO2 thick TiO ₂ film, re-grow SiO ₂ to form a λ/4n _SiO2 thick SiO ₂ film, this is the second cycle Two cycles; finally re-grow TiO ₂ to form a TiO ₂ film with a thickness of λ/4n _TiO2 , and re-grow SiO ₂ to form a SiO ₂ film with a thickness of λ/4n _SiO2 . This is the third cycle, that is, each material according to λ/4n The thickness is alternately stacked and grown to form a three-period DBR film system.

Next, as shown in FIG. 19 , a photoresist 44 is formed on the DBR film system 43 , preferably, the thickness of the photoresist 44 is greater than the depth of the concave structure 42 .

Next, as shown in FIG. 20 , the photoresist 44 and the first exposed DBR film system 43 are etched to remove part of the photoresist 44 and the DBR film system 43 on the surface of the substrate 40 between the concave structures 42 . That is, there is no DBR film system 43 on the surface of the substrate 40 between the concave structures 42 .

Finally, as shown in FIG. 21, the remaining photoresist 44 is removed. Thus, a DBR film system 43 is formed on the inner wall of the concave structure 42 .

Please continue to refer to FIG. 21 , that is, an LED substrate structure is formed, and the LED substrate structure includes: a substrate 40, on which a concave structure 42 arranged in a periodic array is formed. A DBR film system 43 is formed on the inner wall of the shaped structure 42, so as to better improve the luminous brightness of the LED. In the subsequent manufacturing process of the LED, the substrate surface 400 between the concave structures 42 can be used to connect the GaN layer. In this way, a better connection between the LED substrate structure and the GaN layer can be achieved, thereby improving the quality of the GaN-based LED.

In summary, in the LED substrate structure and its manufacturing method provided by the embodiments of the present invention, firstly, the patterned substrate technology and the DBR technology are organically combined to more effectively improve the luminous efficiency and luminous brightness of the LED. ;Secondly, the concave structure and the DBR film system are located on the same surface of the substrate, and both are completed before the substrate is thinned, which is very convenient for processing and subsequent cleaning, which undoubtedly reduces the hidden cost in the LED processing process; again , when making the window of the DBR film system, no photolithography is required, which avoids the technical bottleneck of difficult alignment of photolithography in the process of micro-nano pattern processing; in a word, the manufacturing method of the LED substrate structure provided by the present invention has simple process, low cost It is cheap and suitable for large-scale commercial production. The LED substrate structure provided by the invention can more effectively improve the luminous efficiency and luminous brightness of LEDs, and can accelerate the industrialization process of LEDs entering the high-end lighting field and ordinary people's homes. sustainable development strategy.

[Embodiment 3]

Please refer to FIG. 23 , which is a schematic cross-sectional view of an LED substrate structure according to Embodiment 3 of the present invention. As shown in Figure 23, the LED substrate structure includes: a substrate 50, on which a concave structure 52 arranged in a periodic array is formed, and a DBR film is formed on the inner wall of the concave structure 52 Department 53. The difference between the LED substrate structure in the third embodiment and the LED substrate structure in the second embodiment is that the cross-sectional shape of the concave structure 52 in the third embodiment is triangular, while the concave structure 42 in the second embodiment The cross-sectional shape of the substrate is trapezoidal, which can be controlled by adjusting the etching process of the substrate, which will not be repeated in the embodiments of the present application. Regarding the parts not mentioned in the embodiment of the present application, corresponding reference may be made to the second embodiment, which will not be repeated in the embodiment of the present application.

The above description is only a description of the preferred embodiments of the present invention, and does not limit the scope of the present invention. Any changes and modifications made by those of ordinary skill in the field of the present invention based on the above disclosures shall fall within the protection scope of the claims.

Claims (18)

1. a LED substrat structure, is characterized in that, comprising: substrate, described substrate is formed with the concave structure of cyclic array arrangement or the convex structure of cyclic array arrangement, the inwall of described concave structure is formed with DBR film system; Or the substrate surface between the sidewall of described convex structure and convex structure is formed with DBR film system.

2. LED substrat structure as claimed in claim 1, it is characterized in that, the substrate surface between described concave structure is without DBR film system; Or the roof of described convex structure is without DBR film system.

3. LED substrat structure as claimed in claim 2, is characterized in that, the substrate surface between described concave structure is convenient to connect GaN layer; Or the roof of described convex structure is convenient to connect GaN layer.

4. LED substrat structure as claimed in claim 1, is characterized in that, the section shape of described concave structure is triangle or trapezoidal; The section shape of described convex structure is trapezoidal.

5. LED substrat structure as claimed in claim 1, is characterized in that, the plan view shape of described concave structure is circular, oval or polygon; The plan view shape of described convex structure is circular, oval or polygon.

6. LED substrat structure as claimed in claim 1, it is characterized in that, described DBR film system is by SiO, SiO ₂, TiO ₂or Ti ₃o ₅in the stacked formation of at least bi-material.

7. LED substrat structure as claimed in claim 6, it is characterized in that, often kind of material is according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.

8. the LED substrat structure according to any one of claim 1 ~ 7, is characterized in that, described substrate is Sapphire Substrate.

9. a manufacture method for LED substrat structure, is characterized in that, comprising:

Substrate is provided;

Etch described substrate, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;

The inwall of described concave structure is formed DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system.

10. the manufacture method of LED substrat structure as claimed in claim 9, is characterized in that, etch described substrate, comprises with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate:

Form mask layer over the substrate;

Utilize photoetching and etching technics, remove part mask layer, expose section substrate;

Etch the section substrate exposed, with the convex structure of the concave structure or cyclic array arrangement that form cyclic array arrangement over the substrate;

Remove remaining mask layer.

The manufacture method of 11. LED substrat structures as claimed in claim 10, it is characterized in that, formed in mask layer over the substrate, the material of described mask layer is at least one in silicon dioxide, silicon nitride and silicon oxynitride, and the thickness of described mask layer is 0.1 μm ~ 1 μm.

The manufacture method of 12. LED substrat structures as claimed in claim 10, is characterized in that, utilizes dry method or wet-etching technology to etch the section substrate exposed.

The manufacture method of 13. LED substrat structures as claimed in claim 12, it is characterized in that, when utilizing wet-etching technology to etch the section substrate exposed, the etching liquid selected is the mixed liquor of sulfuric acid and phosphoric acid, in described mixed liquor, the volume ratio of sulfuric acid and phosphoric acid is 3:1 ~ 10:1, technological temperature is 200 DEG C ~ 300 DEG C, and the process time is 1 minute ~ 60 minutes.

The manufacture method of 14. LED substrat structures as claimed in claim 12, is characterized in that, when utilizing dry etch process to etch the section substrate exposed, the dry etch process selected is inductively coupled plasma dry etch process.

The manufacture method of 15. LED substrat structures as claimed in claim 9, is characterized in that, the inwall of described concave structure is formed DBR film system; Or on the substrate surface between the sidewall and convex structure of described convex structure, form DBR film system comprise:

Substrate surface on the inwall of described concave structure and between concave structure forms DBR film system; Or the substrate surface between the sidewall of described convex structure, roof and convex structure forms DBR film system;

Formation photoresist is fastened at described DBR film;

Etching photoresist and the DBR film system of exposing at first, removal unit divides the DBR film system on the roof of DBR film system on the substrate surface between photoresist and concave structure or convex structure;

Remove remaining photoresist.

The manufacture method of 16. LED substrat structures as claimed in claim 15, is characterized in that, the thickness of described photoresist is greater than the degree of depth of described concave structure or the height of described convex structure.

The manufacture method of 17. LED substrat structures according to any one of claim 9 ~ 16, it is characterized in that, described substrate is Sapphire Substrate.

The manufacture method of 18. LED substrat structures according to any one of claim 9 ~ 16, it is characterized in that, described DBR film system is by SiO, SiO ₂, TiO ₂or Ti ₃o ₅in the stacked formation of at least bi-material, often kind of material is formed according to λ/4n thickness alternating growth, and the growth cycle of described DBR film system is 3-20.